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CT DELSS1.12 1 Version 1.4 | 2020-04-02 www.osram-os.com Applications CT DELSS1.12 FIREFLY ® E1608 The FIREFLY E1608 family expands OSRAM Opto Semiconductors’ portfolio of visible products for use in mobile devices like fitness tracking or health monitoring. It offers one of the smallest LED footprints in a highly reliable and proven package. The compact size of only 0.8 mm x 1.6 mm x 0.6 mm allows customers the benefit of more flexible product designs. The true green CT DELSS1.22 is specially designed for Heart Rate Monitor applications. Health Monitoring (Heart Rate Monitoring, Pulse Oximetry) Features: Package: white SMT package, colorless clear resin Chip technology: UX:3 Typ. Radiation: 120° (Lambertian emitter) Color: λ dom = 530 nm ( true green) Corrosion Robustness Class: 1B ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

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Page 1: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

CT DELSS1.12

1 Version 1.4 | 2020-04-02

Produktdatenblatt | Version 1.1 www.osram-os.com

Applications

CT DELSS1.12

FIREFLY® E1608 The FIREFLY E1608 family expands OSRAM Opto Semiconductors’ portfolio of visible products for use in mobile devices like fitness tracking or health monitoring. It offers one of the smallest LED footprints in a highly reliable and proven package. The compact size of only 0.8 mm x 1.6 mm x 0.6 mm allows customers the benefit of more flexible product designs. The true green CT DELSS1.22 is specially designed for Heart Rate Monitor applications.

— Health Monitoring (Heart Rate Monitoring, Pulse Oximetry)

Features: — Package: white SMT package, colorless clear resin

— Chip technology: UX:3

— Typ. Radiation: 120° (Lambertian emitter)

— Color: λdom = 530 nm (● true green)

— Corrosion Robustness Class: 1B

— ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

Page 2: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

CT DELSS1.12

2 Version 1.4 | 2020-04-02

Ordering Information

Type Luminous Intensity 1) Ordering CodeIF = 20 mAIv

CT DELSS1.12-AABB-36-N626 1120 ... 2800 mcd Q65113A0021

Page 3: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

CT DELSS1.12

3 Version 1.4 | 2020-04-02

Maximum RatingsParameter Symbol Values

Operating Temperature Top min. max.

-40 °C 85 °C

Storage Temperature Tstg min. max.

-40 °C 85 °C

Junction Temperature Tj max. 90 °C

Forward current TS = 25 °C

IF min. max.

3 mA 30 mA

Surge Current t ≤ 10 µs; D = 0.005 ; TS = 25 °C

IFS max. 70 mA

Reverse voltage 2) TS = 25 °C

VR max. 5 V

ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

VESD 2 kV

Page 4: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

CT DELSS1.12

4 Version 1.4 | 2020-04-02

CharacteristicsIF = 20 mA; TS = 25 °C

Parameter Symbol Values

Peak Wavelength λpeak typ. 525 nm

Dominant Wavelength 3) IF = 20 mA

λdom min. typ. max.

519 nm 530 nm 543 nm

Viewing angle at 50% IV 2φ typ. 120 °

Forward Voltage 4) IF = 20 mA

VF min. typ. max.

2.2 V 2.6 V 3.1 V

Reverse current 2) VR = 5 V

IR typ. max.

0.01 µA 10 µA

Real thermal resistance junction/ambient 5)6) RthJA real typ. max.

420 K / W 580 K / W

Real thermal resistance junction/solderpoint 5) RthJS real typ. max.

51 K / W 68 K / W

Page 5: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

CT DELSS1.12

5 Version 1.4 | 2020-04-02

Brightness Groups

Group Luminous Intensity 1) Luminous Intensity. 1) Luminous Flux 7)

IF = 20 mA IF = 20 mA IF = 20 mAmin. max. typ.Iv Iv ΦV

AA 1120 mcd 1400 mcd 3960 mlm

AB 1400 mcd 1800 mcd 5020 mlm

BA 1800 mcd 2240 mcd 6340 mlm

BB 2240 mcd 2800 mcd 7910 mlm

Forward Voltage Groups

Group Forward Voltage 4) Forward Voltage 4)

IF = 20 mA IF = 20 mAmin. max.VF VF

N6 2.2 V 2.5 V

U6 2.5 V 2.8 V

26 2.8 V 3.1 V

Wavelength Groups

Group Dominant Wavelength 3) Dominant Wavelength 3)

IF = 20 mA IF = 20 mAmin. max.λdom λdom

3 519 nm 525 nm

4 525 nm 531 nm

5 531 nm 537 nm

6 537 nm 543 nm

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CT DELSS1.12

6 Version 1.4 | 2020-04-02

Group Name on Label Example: AA-3-26Brightness Wavelength Forward Voltage

AA 3 26

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CT DELSS1.12

7 Version 1.4 | 2020-04-02

Relative Spectral Emission 7)

Irel = f (λ); IF = 20 mA; TS = 25 °C

CT DELSS1.12

350 400 450 500 550 600 650 700 750 800

λ /

0.0

0.2

0.4

0.6

0.8

1.0I

: Vλ

: true green

Radiation Characteristics 7)

Irel = f (ϕ); TS = 25 °CCT DELSS1.12

-100°

-90°

-80°

-70°

-60°

-50°

-40°

-30°

-20°-10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90°

ϕ /

0.0

0.2

0.4

0.6

0.8

1.0I

: 0°: 90°

Page 8: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

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8 Version 1.4 | 2020-04-02

Forward current 7)

IF = f(VF); TS = 25 °CCT DELSS1.12

2.2 3.32.4 2.6 2.8 3.0 3.2

VF / V

3

10

20

30

40

50

60

70IF / mA

Relative Luminous Intensity 7), 8)

Iv/Iv(20 mA) = f(IF); TS = 25 °CCT DELSS1.12

3 10 20 30 40 50 60 70

IF / mA

0.0

0.5

1.0

1.5

2.0

2.5IVIV(20mA)

Dominant Wavelength 7)

Δλdom = f(IF); TS = 25 °CCT DELSS1.12

3 10 20 30 40 50 60 70

IF / mA

-10

-5

0

5

10∆λ dom / nm

Page 9: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

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9 Version 1.4 | 2020-04-02

Forward Voltage 7)

ΔVF = VF - VF(25 °C) = f(Tj); IF = 20 mACT DELSS1.12

-40 -20 0 20 40 60 80

Tj / °C

-0.2

0.0

0.2

0.4

∆VF / V

Relative Luminous Intensity 7)

Iv/Iv(25 °C) = f(Tj); IF = 20 mACT DELSS1.12

-40 -20 0 20 40 60 80

Tj / °C

0.0

0.2

0.4

0.6

0.8

1.0

1.2IvIv(25°C)

Dominant Wavelength 7)

Δλdom = λdom - λdom(25 °C) = f(Tj); IF = 20 mACT DELSS1.12

-40 -20 0 20 40 60 80

Tj / °C

-8

-6

-4

-2

0

2

4

6

8

10∆λ dom / nm

Page 10: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

CT DELSS1.12

10 Version 1.4 | 2020-04-02

Max. Permissible Forward CurrentIF = f(T)

CT DELSS1.12

0 20 40 60 80

T [°C]

0

5

10

15

20

25

30

IF [mA]

: Ta

: Ts

Permissible Pulse Handling CapabilityIF = f(tp); D: Duty cycle

10-6 10-5 10-4 10-3 0,01 0,1 1 10

Pulse time [s]

40

60

80

IF [mA]

TS = 0°C ... 85°CCT DELSS1.12

: D = 1.0: D = 0.5: D = 0.2: D = 0.1: D = 0.05: D = 0.02: D = 0.01: D = 0.005

Page 11: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

CT DELSS1.12

11 Version 1.4 | 2020-04-02

Dimensional Drawing 9)

Further Information:

Approximate Weight: 2.0 mg

Package marking: Cathode

Corrosion test: Class: 1B Test condition: 25°C / 75 % RH / 200ppb SO2, 200ppb NO2, 10ppb H2S, 10ppb Cl2 / 21 days (EN 60068-2-60 (Method 4))

Page 12: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

CT DELSS1.12

12 Version 1.4 | 2020-04-02

Electrical Internal Circuit

Page 13: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

CT DELSS1.12

13 Version 1.4 | 2020-04-02

Recommended Solder Pad 9)

For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere.

Page 14: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

CT DELSS1.12

14 Version 1.4 | 2020-04-02

Reflow Soldering ProfileProduct complies to MSL Level 3 acc. to JEDEC J-STD-020E

00

s

OHA04525

50

100

150

200

250

300

50 100 150 200 250 300t

T

˚C

St

t

Pt

Tp240 ˚C

217 ˚C

245 ˚C

25 ˚C

L

Profile Feature Symbol Pb-Free (SnAgCu) Assembly UnitMinimum Recommendation Maximum

Ramp-up rate to preheat*)

25 °C to 150 °C2 3 K/s

Time tSTSmin to TSmax

tS 60 100 120 s

Ramp-up rate to peak*)

TSmax to TP

2 3 K/s

Liquidus temperature TL 217 °C

Time above liquidus temperature tL 80 100 s

Peak temperature TP 245 260 °C

Time within 5 °C of the specified peaktemperature TP - 5 K

tP 10 20 30 s

Ramp-down rate*TP to 100 °C

3 6 K/s

Time25 °C to TP

480 s

All temperatures refer to the center of the package, measured on the top of the component* slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range

Page 15: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

CT DELSS1.12

15 Version 1.4 | 2020-04-02

Taping 9)

Page 16: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

CT DELSS1.12

16 Version 1.4 | 2020-04-02

Tape and Reel 10)

Reel DimensionsA W Nmin W1 W2 max Pieces per PU

180 mm 8 + 0.3 / - 0.1 mm 60 mm 8.4 + 2 mm 14.4 mm 2000

Page 17: CT DELSS1 · CT DELSS1.12 4 Version 1.4 | 2020-04-02 Characteristics I F = 20 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 525 nm Dominant Wavelength3) I

CT DELSS1.12

17 Version 1.4 | 2020-04-02

Barcode-Product-Label (BPL)

Dry Packing Process and Materials 9)

OHA00539

OSRAM

Moisture-sensitive label or print

Barcode label

Desiccant

Humidity indicator

Barcode label

OSRAM

Please check the HIC immidiately afterbag opening.

Discard if circles overrun.Avoid metal contact.

WET

Do not eat.

Comparatorcheck dot

parts still adequately dry.

examine units, if necessary

examine units, if necessary

5%

15%

10%bake units

bake units

If wet,

change desiccant

If wet,

Humidity IndicatorMIL-I-8835

If wet,

Mois

ture

Level 3

Flo

or tim

e 168 H

ours

Mois

ture

Level 6

Flo

or tim

e 6

Hours

a) H

umid

ity In

dicato

r C

ard is

> 1

0% w

hen read a

t 23 ˚

C ±

5 ˚C

, or

reflo

w, v

apor-phase r

eflow

, or equiv

alent p

rocessin

g (peak p

ackage

2. Afte

r th

is b

ag is o

pened, devic

es that w

ill b

e subje

cted to

infrare

d

1. Shelf

life in

seale

d bag: 2

4 month

s at <

40 ˚

C a

nd < 9

0% rela

tive h

umid

ity (R

H).

Mois

ture

Level 5

a

at facto

ry c

onditions o

f

(if b

lank, s

eal date

is id

entical w

ith d

ate c

ode).

a) M

ounted w

ithin

b) S

tore

d at

body tem

p.

3. Devic

es require

bakin

g, befo

re m

ounting, i

f:

Bag s

eal date

Mois

ture

Level 1

Mois

ture

Level 2

Mois

ture

Level 2

a4. If b

aking is

require

d,

b) 2a o

r 2b is

not m

et.

Date

and ti

me o

pened:

refe

rence IP

C/J

ED

EC

J-S

TD

-033 fo

r bake p

rocedure

.

Flo

or tim

e see b

elow

If bla

nk, see b

ar code la

bel

Flo

or tim

e > 1

Year

Flo

or tim

e 1

Year

Flo

or tim

e 4

Weeks10%

RH

.

_<

Mois

ture

Level 4

Mois

ture

Level 5

˚C).

OPTO

SEM

ICO

NDUCTORS

MO

ISTURE S

ENSITIV

E

This b

ag conta

ins

CAUTION

Flo

or tim

e 72 H

ours

Flo

or tim

e 48 H

ours

Flo

or tim

e 24 H

ours

30 ˚C

/60%

RH

.

_<

LE

VE

L

If bla

nk, see

bar code la

bel

Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.

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CT DELSS1.12

18 Version 1.4 | 2020-04-02

Chip Technology: P: Standard power class S: Highest power class

Package Type D: Top emitting device, leadframe based, white reflector package

Wavelength Emission Color (λdom typ.) T: 528 nm true green H: 645 nm hyper-red B: 470 nm blue R: 625 nm red W: white

Product version

C: Consumer Segment L: Automotive

Multi- market

Encapsulant Type / Lens Properties L: No lens (Lambertian)

Lead / Package Properties TOPlooker: B: 2218 E: 1608

Technology Concept S: Silicone casting 3: Silicone encapsulation

Type Designation System

C H D E L S S 1 . 1 2

Binning Information: Saturated colors 2: mcd

Special characteristics Saturated colors 1: InGAN saturated 2: InGaAIP saturated

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CT DELSS1.12

19 Version 1.4 | 2020-04-02

NotesThe evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the device specified in this data sheet falls into the class exempt group (exposure time 10000 s). Under real circumstances (for expo-sure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices. As a matter of principle, however, it should be mentioned that intense light sources have a high secondary exposure potential due to their blinding effect. When looking at bright light sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita-tion, annoyance, visual impairment, and even accidents, depending on the situation.

Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There-fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810.

For further application related information please visit www.osram-os.com/appnotes

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CT DELSS1.12

20 Version 1.4 | 2020-04-02

Disclaimer

Attention please!The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances.For information on the types in question please contact our Sales Organization.If printed or downloaded, please find the latest version on the OSRAM OS website.

PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.

Product and functional safety devices/applications or medical devices/applicationsOSRAM OS components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices.OSRAM OS products are not qualified at module and system level for such application.

In case buyer – or customer supplied by buyer – considers using OSRAM OS components in product safety devices/applications or medical devices/applications, buyer and/or customer has to inform the local sales partner of OSRAM OS immediately and OSRAM OS and buyer and /or customer will analyze and coordi-nate the customer-specific request between OSRAM OS and buyer and/or customer.

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Glossary1) Brightness: Brightness values are measured during a current pulse of typically 25 ms, with an internal

reproducibility of ±8 % and an expanded uncertainty of ±11 % (acc. to GUM with a coverage factor of k = 3).

2) Reverse Operation: Reverse Operation of 10 hours is permissible in total. Continuous reverse opera-tion is not allowed.

3) Wavelength: The wavelength is measured at a current pulse of typically 25 ms, with an internal repro-ducibility of ±0.5 nm and an expanded uncertainty of ±1 nm (acc. to GUM with a coverage factor of k = 3).

4) Forward Voltage: The forward voltage is measured during a current pulse of typically 8 ms, with an internal reproducibility of ±0.05 V and an expanded uncertainty of ±0.1 V (acc. to GUM with a coverage factor of k = 3).

5) Thermal Resistance: Rth max is based on statistic values (6σ).6) Thermal Resistance: RthJA results from mounting on PC board FR 4 (pad size 16 mm² per pad)7) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic-

es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif-fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.

8) Characteristic curve: In the range where the line of the graph is broken, you must expect higher differ-ences between single devices within one packing unit.

9) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm.

10) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.

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22 Version 1.4 | 2020-04-02

Revision HistoryVersion Date Change

1.4 2020-04-02 Ordering Information Characteristics Brightness Groups Electro - Optical Characteristics (Diagrams)

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23 Version 1.4 | 2020-04-02

Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved.