Company Overview

May, 2004

GPD Optoelectronics CorporationGPD Optoelectronics Corporation

Outline

• Company Overview

• Products

• R & D

• “Tour”

• 1973 Founded (as Germanium Power Devices Corp.)

• 1980 Introduced Ge pn detector products

• 1993 Introduced InGaAs detector products

• 2000 Relocated to Salem, NH, doubling capacity

Company History

Company HeadquartersSalem, NH

Facilities

• 28,000 square feet includes:1,000 Square feet Class 1,000 Cleanroom

6,000 Square feet Class 10,000 Cleanroom

8,000 Square feet Manufacturing + Test

6,000 Square feet Offices

Products

• Germanium Detectors– p-i-n and p-n detectors

• Standard• Large area

– Two-Color detectors– Avalanche photo diodes

• InGaAs Detectors– Large area– High speed

Research & Development

• InGaAs avalanche photodiode

• High linearity, low-distortion InGaAs pin

• Low PDL detectors

• Cryogenic Ge diodes and transistors

• Cryogenic SiGe diodes and transistors

Company “Tour”

Photolithography

Photolithography

Etching

Deposition, Metallization

Optical Characterization

Wire Bond, Die Bond

Fiber Pigtailing

Cryogenic Measurement