GaN Transistors – Giving New Life to Moore’s Law · Journey Continues. GaN Transistors – Giving New Life to Moore’s Law. ... Time to Failure vs V. DS (150°C) EPC2016C. Age

EPC - The Leader in GaN ISPSD 2015 www.epc-co.com 1

Alex Lidow

The eGaN® FET Journey Continues

GaN Transistors – Giving New Life to Moore’s Law


Agenda

• GaN - The Better Switch• Performance• Reliability• Cost• Summary

2


Power Switch Wish List

• Lower On Resistance • Less Capacitance• Less Inductance• Lower Thermal Impedance• Smaller• Lower Cost


0

1

2

3

4

5

6

0 20 40 60 80 100 120

RD

S(on

) (m

Ω)

Drain-to-Source Voltage (V)

4.1 x 1.63 mm6.68 mm2

VGS=5 V

On-Resistance Comparison

2.3x

2.6x

6.05 x 2.3 mm13.92mm2

4

eGaN FETs Gen 4

eGaN FETs Gen 2


10

100

1000

0 50 100 150 200 250

FOM

=QG·R

DS(

on) (

nC·m

Ω)


EPC Gen 4EPC Gen 2Vendor AVendor BVendor CVendor DVendor E

eGaN FETs 2014

Si MOSFETs 2014

VDS=0.5·VDSS

Faster Switching

9x

1.9x

5.5x

5


1

10

100

0 50 100 150 200 250

FOM

HS=

(QG

D+Q

GS2

)·RD

S(on

) (pC

·Ω)


EPC Gen 4

Vendor A

Vendor B

Vendor C

Vendor D

Vendor E

Si MOSFETs 2014

VDS=0.5·VDSS, IDS=20 A

5x

4.8x

8x

6

eGaN FETs

Faster Switching


LGALGA eGaN FET

0

0.5

1

1.5

2

2.5

SO-8 LFPAK DirectFET LGA

Pow

er L

oss

(W)

Device Loss BreakdownPackageDie

0

0.5

1

1.5

2

2.5

SO-8 LFPAK DirectFET LGA

Pow

er L

oss

(W)

Device Loss BreakdownPackageDie

SO-8 LFPAK DirectFET

VIN =12 V VOUT =1.2 V IOUT =20 A fsw =1 MHz

Drain

Source

Gate

Reference: D. Reusch, D. Gilham, Y. Su, and F.C. Lee, C, “Gallium Nitride Based 3D Integrated Non-Isolated Point of Load Module,” APEC 2012

18%

82%

27%

73%

53%47%

82%18%

Package Inductance


RƟCA

Thermal Efficiency

Silicon SubstrateActive GaN Device Region RƟJC

RƟBA

RƟJB

TJ


Thermal Comparisons

0

0.5

1

1.5

2

2.5

3

0 5 10 15 20 25 30 35

RƟ

JB,T

herm

al R

esis

tanc

e (°

C/W

)

Device Area (mm2)

RθJB_SiRθJB_GaN


Thermal Comparisons

0

0.5

1

1.5

2

2.5

3

0 5 10 15 20 25 30 35

RƟ

JC, T

herm

al R

esis

tanc

e (°

C/W

)

Device Area (mm2)

RθJC_Si RθJC_GaN


86

87

88

89

90

91

92

2 6 10 14 18 22 26 30 34 38 42 46 50

Effic

ienc

y (%

)

Output Current (A)

30 V MOSFET Module

40 V/ 30 V EPC Gen 4

VIN=12 V VOUT=1.2 V 1 MHz

DC-DC Performance

30% Loss Reduction

11


92

93

94

95

96

97

98

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32

Effic

ienc

y (%

)

Output Current (A)

100 V/ 80 V EPC Gen 2/4

fsw=300 kHzfsw=500 kHz

80 V MOSFET

VIN=48 V VOUT=12 V

Higher Voltage DC-DC Performance

12

60% Loss Reduction


Take It Up Another Notch!

13


Generation 2/4 Discrete HB

Generation 4 Monolithic 4:1 HB

+

GaN Integration

TSR

Top Switch (T) Synchronous Rectifier (SR) 33 % die size reduction


Monolithic Half Bridge

VIN=48 V VOUT=1 V 300 kHz L=330 nH

75

76

77

78

79

80

81

82

83

84

85

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32

Effic

ienc

y (%

)

Output Current (A)

EPC2001+

EPC2021

EPC210580 V 1:4 HB

33 % die size reduction


Reliability


HTRB and HTGB Reliability


Environmental Reliability

Stress Test Part Number Voltage(V)

Die Size(mm x mm) Test Condition # of Failure Sample Size

(sample x lot) Duration

H3TRB (JEDEC Standard JESD22A101)

H3TRB EPC2001C 100 L (4.11 x 1.63) T=85oC, RH=85%, VDS=80 V 0 25 x 1 1000 Hrs

H3TRB EPC2016C 100 M (2.11 x 1.63) T=85oC, RH=85%, VDS=80 V 0 25 x 2 1000 Hrs

H3TRB EPC2015 40 L (4.11 x 1.63) T=85oC, RH=85%, VDS=40 V 0 50 x 1 1000 Hrs

H3TRB EPC2010 200 L (3.55 x 1.63) T=85oC, RH=85%, VDS=100 V 0 50 x 1 1000 Hrs

H3TRB EPC2012 200 M (1.71 x 0.92) T=85oC, RH=85%, VDS=100 V 0 50 x 1 1000 Hrs

HTS

HTS EPC2001C 100 L (4.11 x 1.63) T=150oC, Air 0 77 x 1 1000 Hrs

HTS EPC2016C 100 M (2.11 x 1.63) T=150oC, Air 0 77 x 2 1000 Hrs

TC (JEDEC Standard JESD22A104)

TC EPC2001 100 L (4.11 x 1.63) -40 to +125oC, Air 0 35 x 3 1000 Cys

TC EPC8007 40 S (2.05 x 0.85) -40 to +125oC, Air 0 35 x 1 1000 Cys

TC EPC2010 200 L (3.55 x 1.63) -40 to +125oC, Air 0 35 x 1 1000 Cys

MSL1 (IPC/JEDEC joint Standard J-STD-020)

MSL1 EPC2001 100 L (4.11 x 1.63) T=85oC, RH=85%, 3 reflow 0 25 x 1 168 Hrs

MSL1 EPC8003 40 S (2.05 x 0.85) T=85oC, RH=85%, 3 reflow 0 25 x 1 168 Hrs

MSL1 EPC8007 40 S (2.05 x 0.85) T=85oC, RH=85%, 3 reflow 0 25 x 1 168 Hrs

AC (JEDEC Standard JESD22A102)

AC EPC2001C 100 L (4.11 x 1.63) T=121oC, RH=100% 0 25 x 1 96 Hrs

AC EPC2016C 100 M (2.11 x 1.63) T=121oC, RH=100% 0 25 x 2 96 Hrs


Failure under Drain Stress

Time to Failure under Drain Stress

0.0001%

1%0.01%

20 yrs

Time to Failure vs VDS (150°C)

EPC2016C

Age of the Universe


Gate Stress

5 5.5 6 6.5 7105

1010

1015

1020

1025

1030

Gate Bias (V)

Mea

n Ti

me

to F

ailu

re (s

)

MTTF vs. VGS

10 yrs


Reliability Comparison

Technology Part Fully Enhaced

Gate Voltage (V)Stress

Conditions HTGB FIT Rate

(#/billion hours)

eGaN FET EPC2016 5 150 °C 5V << 1Silicon n-MOSFET IRF6795M 10 150 °C 10V 7 [Ref 13]

SiC n-MOSFET CPM2-1200-0025B 20 150 °C 20V 100 [Ref 14]

Technology Part Maximum Drain

Voltage (V)Stress

Conditions HTRB FIT Rate

(#/billion hours)eGaN FET EPC2016 100 150 °C 100V << 1

Silicon n-MOSFET A03160 600 150 °C 480V 20 [Ref 19]SiC n-MOSFET CPM2-1200-0025B 1200 150 °C 800V 25 [Ref 14]

21


Traditional Power Packaging

Source/Gate ClipsSource/Gate Die Attach

MOSFET DieDrain Die Attach

PCB

PCB Gate ConnectionPCB Source

Connection

PCB Drain Connection

GateSource

Drain Pad

MOSFET

22


A Better Power Package

eGaN FET Die

Drain/Source/GateConnections

PCB

PCB Source Connection

PCB Gate Connection

PCB Drain Connection

eGaN FET

23


MOSFET vs. eGaN Costs*

Starting Material Epi GrowthWafer FabTestAssembly

OVERALL

2014 2016lower lower

~higherlowersamelower

lowersamelower

~same?

lower!~higher

* Product with the same on resistance and voltage rating


Starting Material Epi GrowthWafer FabTestAssembly

OVERALL

2014 2016lower lower

~samelowersamelower

lowersamelower

~same?

lower!lower!

* Product with the same on resistance and voltage rating

Active die <3 mm2

MOSFET vs. eGaN Costs*


Device VDS(MAX) RDS(on)

(max)

QGD

(typ @50%BV)

QO SS

(typ @50%BV)

QG (typ @5V)

Device Area 1Ku 10Ku 100Ku

EPC2035 60 V 45 mΩ 0.16 nC 3 nC 1.2 nC 0.81 mm2 $ 0.360 $ 0.293 $ 0.230 FDS5351 60 V 35 / 42 mΩ 3.5 nC 7 Nc 19 nC 31 mm2 $ 0.382 $ 0.313 $ 0.285

EPC2036 100 V 65 mΩ 0.15 nC 4 nC 1 nC 0.81 mm2 $ 0.376 $ 0.306 $ 0.240 FMDS8622 100 V 56 / 88 mΩ 1.3 nC 6.5 nC 2.8 nC 32.5 mm2 $ 0.396 $ 0.324 $ 0.295

Price Comparison

0.9mm x 0.9 mm

MOSFET vs. eGaN Costs


Gen 22010-2013

40 V - 200 V

Generation 3Higher Frequency

LaunchedSeptember 2013

Half Bridge ICsLaunched

September 2014

Generation 42 X Performance Improvement

LaunchedJune 2014

300 - 450 V VoltageSept-Dec 2014

Moore’s Law Revival


Gen 3 & 4 FETs and ICs2014

30 V - 450 V3 GHz

Generation 5Lower R x AQ2-Q4 2015

Higher Scale Integrated CircuitsQ2/2015

Higher PowerRF FETs and ICs

Broadband to 6 GHzQ3/2015

Moore’s Law Revival

MOSFET killer minimum size dieQ2/2015


Summary

• eGaN FETs are smaller and faster.• eGaN technology is very thermally

efficient and reliable.• eGaN technology costs less than silicon

MOSFET technology.• eGaN technology is moving quickly. • eGaN technology is making serious

inroads into silicon’s territory.


Documents

GaN Transistors – Giving New Life to Moore’s Law · Journey Continues. GaN Transistors – Giving New Life to Moore’s Law. ... Time to Failure vs V. DS (150°C) EPC2016C. Age