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Fabrication pH Electrode Using Lift-Off Method and Electrodeposition. Presented by Na Zhang. What ’ s the Problem?. How to create clear windows in the substrate?. How to solve the problem?. Lift-Off Method LOL-2000 (bottom) S -1813 Photoresist (top). Electrodeposition. pH Sensitivity. - PowerPoint PPT Presentation
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Fabrication pH Electrode UFabrication pH Electrode Using Lift-Off Method and Elsing Lift-Off Method and Electrodepositionectrodeposition
Presented by Na ZhangPresented by Na Zhang
What’s the Problem?What’s the Problem?
How to create clear windows in How to create clear windows in the substrate?the substrate?
How to solve the How to solve the problem?problem? Lift-Off MethodLift-Off Method LOL-2000 (bottom)LOL-2000 (bottom)S -1813 Photoresist (top)S -1813 Photoresist (top)
ElectrodepositionElectrodeposition
pH SensitivitypH Sensitivity
EMF vs. pH (315s_15s_1)
y = -65.625x + 759.78
R2 = 0.9985
0
50
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0 2 4 6 8 10
pH
EM
S, m
V
Series1
Linear (Series1)
EMF vs. pH (630s_30s_1)
y = -73.425x + 759.23
R2 = 0.996
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0 2 4 6 8 10
pH
EM
S, m
V
Series1
Linear (Series1)
EMF vs. pH (1260s_60s_1)
y = -70.475x + 763.33
R2 = 0.9969
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0 2 4 6 8 10
pH
EM
S, m
V
Series1
Linear (Series1)
Electrode #103-12-04_630s_30s_ph678_1.bin
Electrode #5Electrode #5
03-12-05_630s_30s_ph678_1.bin03-12-05_630s_30s_ph678_1.bin
EMF vs. pH (315s_15s_5)
y = - 54. 825x + 432. 29
R2 = 0. 9995
- 20
0
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0 2 4 6 8 10
pH
EMF,
mV
Ser i es1
Li near (Ser i es1)
EMF vs. pH (630s_30s_5)
y = - 54. 95x + 434. 6
R2 = 0. 996
- 20
0
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0 2 4 6 8 10
pH
EMF,
mV
Ser i es1
Li near (Seri es1)
EMF vs. pH (1260s_60s_5)
y = - 55. 925x + 460. 11
R2 = 0. 9976
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0 2 4 6 8 10
pH
EMF,
mV
Ser i es1
Li near (Ser i es1)
EndEnd
Reference ProcedureReference Procedure
1) Clean substrate 2) Spin spacer layer LOL-2000 @ 3000 rpm for 200nm thickness 3) Bake 140 C on hot plate for 5 minutes 4) Spin resist layer S-1813 @ 4000 rpm for 1.3 um thickness 5) Bake 110 C on hot plate for 2 minutes 6) Expose through pattern mask, 45s @ 2.45 mW/cm2 (110 mJ/cm^2 nominally)at UV250 mask aligner, intensity measured using the 400nm probe.
15 s @ 10 mW/cm2 (150 mJ/cm^2 nominally) at UV400 mask aligner.7) Develop in MF319 for 30 sec, CAREFUL agitation
8) Rinse in DI water 9) Blow dry CAREFULLY. 10) Ash at 50W 250mTorr Oxygen for 30 s 11) Deposit thin film 12) Lift off in NMP (Remover 1165)
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