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1/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
Evaluation board ManualEvaluation board Manual
MB39A103MB39A103
Rev 2.0EDecember, 2001
2/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
MB39A103 Evaluation board MB39A103 Evaluation board MB39A103 SpecificationsMB39A103 Specifications1. 1. Pin Assignments Pin Assignments 2. Package & Dimension2. Package & Dimension3. Pin Descriptions 3. Pin Descriptions 4. Block Diagram 4. Block Diagram 5. Setting Method5. Setting Method
1) 1) Output VoltageOutput Voltage2) Triangular Wave Oscillation Frequency 2) Triangular Wave Oscillation Frequency 3) Soft3) Soft--Start Time Start Time 4) 4) CTL Functional MatrixCTL Functional Matrix5) 5) Functional Matrix of Protection enable Functional Matrix of Protection enable 6 Time Constant For Timer6 Time Constant For Timer--Latch ShortLatch Short--CircuitCircuit
Protection Circuit Protection Circuit
MB39A103 Evaluation board ExplanationsMB39A103 Evaluation board Explanations1. 1. Evaluation Board SpecificationsEvaluation Board Specifications2. 2. Pin DescriptionsPin Descriptions3. 3. SwSw Information Information 4. Setup & Confirmation Method 4. Setup & Confirmation Method 5. Parts Layout Block5. Parts Layout Block6. Circuit Diagram6. Circuit Diagram7. Circuit Parts List 7. Circuit Parts List 8. Initialization8. Initialization9. Reference Data 9. Reference Data 10. Parts Select Method 10. Parts Select Method
3/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
SpecificationsSpecificationsMB39A103MB39A103
4/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
(TOP VIEW)
CS2 1 30 CS1
-INE2 2 29 -INE1
FB2 3 28 FB1
DTC2 4 27 DTC1
VCC 5 26 VCCO
CTL 6 25 OUT1
VREF 7 24 OUT2
RT 8 23 OUT3
CT 9 22 OUT4
GND 10 21 GNDO
CSCP 11 20 -INS
DTC3 12 19 DTC4
FB3 13 18 FB4
-INE3 14 17 -INE4
CS3 15 16 CS4
(FPT-30P-M04)
1. 1. Pin AssignmentsPin Assignments
2. 2. Package & DimensionPackage & Dimension
5/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
Pin No Pin Name I/O Description 27 DTC1 I CH1 dead time control terminal. 28 FB1 O CH1 error amplifier output terminal. 29 -INE1 I CH1 error amplifier inverted input terminal. 30 CS1 - CH1 soft-start setting capacitor connection terminal.
CH1
25 OUT1 O CH1 totem pole type output terminal. 4 DTC2 I CH2 dead time control terminal. 3 FB2 O CH2 error amplifier output terminal. 2 -INE2 I CH2 error amplifier inverted input terminal. 1 CS2 - CH2 soft-start setting capacitor connection terminal.
CH2
24 OUT2 O CH2 totem pole type output terminal. 12 DTC3 I CH3 dead time control terminal. 13 FB3 O CH3 error amplifier output terminal. 14 -INE3 I CH3 error amplifier inverted input terminal. 15 CS3 - CH3 soft-start setting capacitor connection terminal.
CH3
23 OUT3 O CH3 totem pole type output terminal 19 DTC4 I CH4 dead time control terminal. 18 FB4 O CH4 error amplifier output terminal. 17 -INE4 I CH4 error amplifier inverted input terminal. 16 CS4 - CH4 soft start setting capacitor connection terminal.
CH4
22 OUT4 O CH4 totem pole type output terminal
9 CT - Triangular wave oscillation frequency setting capacitor connection terminal. OSC
8 RT - Triangular wave oscillation frequency setting resistor connection terminal.
6 CTL I Power supply control terminal. 11 CSCP - Timer latch short-circuit detection capacitor connection terminal. Control 20 -INS I Short-circuit detection comparator inverted input terminal. 26 VCCO - Output block power supply terminal.
5 VCC - Power supply terminal for reference power supply and control circuit.
7 VREF O Reference voltage output terminal. 21 GNDO - Output block ground terminal.
Power
10 GND - Ground terminal.
3. 3. Pin DescriptionsPin Descriptions
6/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
4. 4. Block DiagramBlock Diagram
VIN(1.7V to 5V)
Drive1
ErrorAmp1
(1.24V)
-INE1 VCCO
OUT1
PWMComp.1
<CH1>
OSC
(0.9V)
(0.4V)UVLO2
SCP
PowerON/OFF
CTL
RT CT
VR1
ErrorAmpReference (1.24V)
VREF
VCC
VREF
bias
(2.0V)
Accuracy±1%
Accuracy±10%1MHz
correspondence
CTL
GND
Pch
Power supplyErrorAmpSCPComp
H:ON (Power ON)L:OFF(Standby)VTH=1.4V
Charge Current(1µA)
VREF29A
30
28
27
CS1
FB1
DTC1
26
25
CH1 ON/OFFControl Input(L:ON,H:OFF)
Drive2
ErrorAmp2
(1.24V)
-INE2
OUT2
PWMComp.2
VREF2B
1
3
4
CS2
FB2
DTC2
24
L priority
Drive3
ErrorAmp3
(1.24V)
-INE3
OUT3
PWMComp.3
VREF14C
15
13
12
CS3
FB3
DTC3
23
Drive4
ErrorAmp4
(1V)
-INE4
PWMComp.4
Nch
VREF17D
16
18
19
CS4
FB4
DTC4
L priority GNDO21
OUT422
5
6
10798
VREF
20 (100kΩ) SCP
Comp.-INS
(1.24V)
11CSCP
Short-Circuit Detection ControlInput (L:Short)
H:at SCP
H:UVLO release
Threshold VoltageAccuracy ±1.5%
Accuracy±1%
CTL3
CTL2
CTL1
Io=130mAat VCCO=4V
Io=130mAat VCCO=4V
Io=130mAat VCCO=4V
Io=130mAat VCCO=4V
Nch
Nch
UVLO1
B
Vo1 2.5V
A
Vo23.3V
DVo4-115V
Vo4-25V
C Vo3-115V
Vo3-25V
<CH2>
<CH3>
<CH4>
(10µA)
(10µA)
(10µA)
(10µA)
L priority
L priority
L priority
L priority
L priority
L priority
Threshold VoltageAccuracy ±1.5%
Threshold VoltageAccuracy ±1.5%
Threshold VoltageAccuracy ±1.5%
CH2 ON/OFFControl Input(L:ON,H:OFF)
CH3 ON/OFFControl Input(L:ON,H:OFF)
Transformer
Up/Down Conversion
Up/Down Conversion
Transformer
Vo4-3-7.5V
7/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
To prevent rush currents when the IC is turned on, you can set a soft-start by connecting soft-start capacitor(CS ) to the CS terminal . When IC is turned on, charging starts on capacitor (Cs) connected to the CS terminal. The output voltage does a soft-start with the error amplifier in proportion to to the CS terminal voltage regardless of the load current on the DC/DC converter.The soft-start time is obtained from the following formula.
Soft-start time (time to output 100%) : tsts(s) ≅≅≅≅ 0.124 × CS (µF)
3) 3) SoftSoft--Start Time Start Time
1) 1) Output VoltageOutput Voltage5. 5. Setting Method Setting Method
2)2) Triangular Wave Oscillation FrequencyTriangular Wave Oscillation FrequencyThe triangular wave oscillation frequency can be set by the timing resistor (RT ) connected the RT terminal (pin 8) and timing capacitor (CT ) connected the CT terminal (pin 9) .
Triangular wave oscillation frequency : fosc
fosc(kHz) ≅≅≅≅ 1200000/(CT(pF) × RT(kΩ) )
ErrorAmp
(1.24V)
-INEX
CSX
Vo
R1
R2
Vo(V)=R2
1.24(R1+R2)
8/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
4) 4) CTL Functional MatrixCTL Functional MatrixON/OFF of each channel are set according to a setting condition of the CTL terminal(pin 6), the CS1 terminal(pin30), the CS2 terminal(pin 1), the CS2 terminal(pin 15), and the CS4 terminal(pin 16).
5) 5) Functional Matrix of Protection enableFunctional Matrix of Protection enable
* The method of releasing the latch after protection operates is as follows.
1. The latch after all protection operates by making the CTL terminal “L" is released.
2. The latch after all protection operates by turning on VCC again is released.
CTL CS1 CS2 CS3 CS4 Power CH1 CH2 CH3 CH4
L -* -* -* -* OFF OFF OFF OFF OFF
H GND GND GND GND ON OFF OFF OFF OFF
H Hi-Z GND GND GND ON ON OFF OFF OFF
H GND Hi-Z GND GND ON OFF ON OFF OFF
H GND GND Hi-Z GND ON OFF OFF ON OFF
H GND GND GND Hi-Z ON OFF OFF OFF ON
H Hi-Z Hi-Z Hi-Z Hi-Z ON ON ON ON ON
* : Undefined
Function OUT1 OUT2 OUT3 OUT4
Short-Circuit Protection H L L L
UVLO H L L L
9/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
6)6) Constant For TimerConstant For Timer--Latch ShortLatch Short--Circuit Protection CircuitCircuit Protection CircuitThe output level of the error amplifier of each channel always does the comparison operation with short-circuit protection comparator (SCP Comp.) as the reference voltage.
While the DC/DC converter load conditions are stable on all channels, the short-circuit detection comparator output remains at “L” level, and the CSCP terminal (pin 11) is held at “L” level.
If the load conditions change rapidly due to a short-circuiting of load, causing the output voltage to drop, the output from the short detection comparator goes to “H” level. Charging starts on short-circuit protection capacitor (Cscp) connected to the CSCP terminal at 1µA.
Short-Circuit Detection Time :tPE
tPE (s) ≅≅≅≅ 0.70 × CSCP (µF)
When the capacitor CSCP is charged to the threshold voltage (VTH ≅ 0.70V), the SR latch is set, and the external FET is turned off (dead time is set to 100%). At this time, the SR latch input is closed and the CSCP terminal is held at “L” level.
The latch of the timer latch type short-circuit protection circuit can be released by intercepting powersupply (VCC) or setting the CTL terminal “L" level.
< Timer latch type short-circuit protection circuit>
Vo1
ErrorAmp
+
−-INEX
CSCP
R1
R2 ( 1.24 V)
FBX
SCPComp.
(1.1V:FB1 to FB3)
(1.0V:FB4)
+
−+
S RLatch UVLO
CTLVREF
each channel
Drive
(1µA)
11
CSCP
10/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
ExplanationsExplanations
MB39A103 Evaluation boardMB39A103 Evaluation board
11/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
DIP Switch Function Table
Symbol Descriptions
VIN Power supply pinVIN = 1.7V to 5V (3V typ.)
VoX DC/DC converter output pin
CTLPower supply control pinVCTL = 0V to 0.8V : Standby modeVCTL = 2.0V to VIN : Operation mode
GNDX DC/DC converter ground pinICGND MB39A103 ground pin
SW Name Function ON OFF1 CS1 CH1 control Output ON2 CS2 CH2 control3 CS3 CH3 control5 CTL Power supply control Operation mode Standby mode
Input voltageOscillation frequency
Output voltageOutput current(max)
1. 1. Evaluation Board SpecificationsEvaluation Board Specifications
Function table of the Pin terminal2. 2. Pin DescriptionsPin Descriptions
3. 3. SwSw InformationInformation
Output ONOutput ON
Output OFFOutput OFFOutput OFF
CH1 CH2 CH3 CH4
2.5V 15V, 5V 15V, 5V, -7.5V250mA 10mA, 50mA 10mA, 50mA, -5mA
VIN=1.7V to 5V(3V typ.)fosc=500kHz
3.3V500mA
12/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
* The power supply side terminal is connected with VIN•GND.Please connect the Vo side with a necessary load device or measurement machine.
* SW5(CTL) is made OFF(standby mode), and SW1 to SW3(CS1 to CS3) is put into the state of turning off (output OFF).
* Please turn on SW4 always.
* Please turn on the power to VIN (power supply), make SW5 ON(Operation mode), and turn on SW1 to
SW3 (output ON).
IC operates normally if Vo1=2.5V(Typ.), Vo2=3.3V (Typ.), Vo3-1=15V (Typ.), Vo3-2=5V (Typ.),
Vo4-1=15V (Typ.), Vo4-2=5V (Typ.), and Vo4-3=-7.5V(Typ.) are output.
* Please confirm each output referring to various setting etc. of the attached paper.
4.4. Setup & Confirmation MethodSetup & Confirmation Method
(1) Set up
(2) Confirmation Method
13/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
Note) Only parts C1 and C2 are arranged on the back of the board.
5. 5. Parts Layout BlockParts Layout Block
Board parts block diagram
14/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
Board Layout
Top Side
Bottom Side
Inside VIN & GND(Layer 2)
Inside GND(Layer 3)
15/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
6. 6. Circuit DiagramCircuit Diagram
Note) The constant of the unsurface mounted component is described with XXX.
Vo4-115V
Vo4-25V
Vo4-3-7.5V
Io4-2=50mA
Io4-3=-5mA
Io4-1=10mA
-INE1 VCCO
OUT1
VIN(1.7V to 5V)
RT CT
VCC
VREF
Accurary±1%
Accurary±10%1MHz
correspondence
CTL
GND
H:ON (Power ON)L:OFF(Standby)VTH=1.4V
Charge Current(1 µ A)
A
CS1
FB1
DTC1
25
-INE2
OUT2
B
CS2
FB2
DTC2
24
-INE3
OUT3
C
CS3
FB3
DTC3
23
B
-INE4D
CS4
FB4
DTC4
GNDO21
OUT422
5
-INS
CSCP
Short-Circuit Detection ControlInput (L:Short)
Vo1 2.5V
A
Vo23.3V
Io1=250mA
R11
R3
R2
R1
R15
R13 R14
R17
R18
R35
R36
R21
R20R19
R24
R23
R27
R25
R30
R29
R33
R32R31
C20
C22
C24
C26
C28
R37 C29C30
C2
C1 Q1 L2
L3
L4
C5
C6
D122µH
R4
C34700pF
C4
P1
R12
C164700pF
C17
D7
P2
C18
C19
P11
P10
R16
C21
R22
C23
P5
P6
P7
P8
P9
R28
C25
R34
C27
IC GND
C31XXX
GND
GND1
GND2
Q5
α
β
γ
δ
It is IC operation, and a state of all channel ON in the above figure.
P12
29
30
28
27
2
1
3
4
14
15
13
12
17
16
18
19
10798
20
11
26
6
R26
Drive1
ErrorAmp1
(1.24V)
PWMComp.1
<CH1>
OSC
(0.9V)
(0.4V) UVLO2
SCP
PowerON/OFF
CTLVR1
ErrorAmpReference (1.24V)
VREF
bias
(2.0V)
Pch
Power supplyErrorAmpSCPComp.
VREF
(10µA)
Drive2
ErrorAmp2
(1.24V)
PWMComp.2
<CH2>VREF
(10µA)
L priority
L priority
L priority
L priority
Drive3
ErrorAmp3
(1.24V)
PWMComp.3
<CH3>VREF
(10µA)
L priority
L priority
Drive4
ErrorAmp4
(1V)
PWMComp.4
<CH4>
Nch
VREF
(10µA)
L priority
L priority
VREF (100kΩ) SCP
Comp.
(1.24V)
H:at SCP
H : UVLO release
offset ±10mV
Accuracy±1%
offset ±10mV
offset ±10mV
offset ±10mV
Io=130mAat VCCO=4V
Io=130mAat VCCO=4V
Io=130mAat VCCO=4V
Io=130mAat VCCO=4V
Nch
Nch
UVLO1
C
Vo3-115V
Vo3-25V
Io3-2=50mA
D5
D6T2 C14
C15P3
D
D2
D3
D4
T1 C9
C10
C11
Io2=500mA
GND4
C12XXX
R10
R5
C8
C7XXX
R6
R9
C13
GND3
D8
< Zeta Conversion >
< Sepic Conversion >
< Transformer >
< Transformer >
Q2
Q4
Io3-1=10mA
OFFSW1
ON
OFFON
OFFON
ONOFF
12
34
56
α
β
γ
δ
CS1 OPEN
CS2 OPEN
CS3 OPEN
"ON" always
CTL
ON
C32P4
4.7µF
L110µF
15µH0Ω
150Ω
1µF
0Ω0.1µF
0Ω 10µH
300Ω
1µF
15µH10µF
4.7µF
0Ω
1µF 2.2µF
2.2µF
0Ω
0Ω
1µF
0Ω
0.1µF
2.2µF
0Ω
2.2µF
2.2µF
2.2µF
0.1µF100pF24kΩ
0.01µF
20kΩ33kΩ
2kΩ
0.047µF
0.1µF
15kΩ
43kΩ2.4kΩ
20kΩ33kΩ
0.047µF
2kΩ0.1µF
15kΩ
43kΩ2.4kΩ
13kΩ18kΩ
1kΩ
0.1µF
0.1µF
15kΩ
22kΩ3kΩ
13kΩ18kΩ
0.1µF
0.1µF
1kΩ
15kΩ
12kΩ3.3kΩ
16/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
7. 7. Circuit Parts ListCircuit Parts List
< Continued >
Component(Circuit diagram mark) Rated1 Rated2 Rated3 Value Deviation Characteristic
1 M1 IC MB39A103PFT - - - - - - FPT-30P-M04 FUJITSU
2 Q1 PNP CPH3106 PC=0.9W VCEO=-12V IC=-3A - - - - SANYO3 Q2 Nch FET MCH3405 PD=0.8W VDSS=10V VGSS=±10V ID=1.8A - - - SANYO4 Q4 Nch FET MCH3405 PD=0.8W VDSS=10V VGSS=±10V ID=1.8A - - - SANYO5 Q5 NPN CPH3206 PC=0.9W VCEO=15V IC=3A - - - SC-62 SANYO6 D1 SBD SBS004 VF(max)=0.35V, at IF=1A VRRM=15V IO=1A - - - SOT-23 SANYO7 D2 SBD SB05-05CP VF(max)=0.55V, at IF=0.5A VRRM=50V IO=500mA - - - SOT-23 SANYO8 D3 SBD SB05-05CP VF(max)=0.55V, at IF=0.5A VRRM=50V IO=500mA - - - SOT-23 SANYO9 D4 SBD SB05-05CP VF(max)=0.55V, at IF=0.5A VRRM=50V IO=500mA - - - SOT-23 SANYO
10 D5 SBD SB05-05CP VF(max)=0.55V, at IF=0.5A VRRM=50V IO=500mA - - - SOT-23 SANYO11 D6 SBD SB05-05CP VF(max)=0.55V, at IF=0.5A VRRM=50V IO=500mA - - - SOT-23 SANYO12 D7 SBD SBS004 VF(max)=0.35V, at IF=1A VRRM=15V IO=1A - - - SOT-23 SANYO13 D8 SBD SBS004 VF(max)=0.35V, at IF=1A VRRM=15V IO=1A - - - SOT-23 SANYO14 L1 Inductor RLF5018T-220MR63 IDC1=0.63A IDC2=0.86A - 22µH ±20% RDC=0.16Ω - TDK15 L2 Inductor RLF5018T-150MR76 IDC1=0.76A IDC2=1.0A - 15µH ±20% RDC=0.12Ω - TDK16 L3 Inductor SLF6028T-100M1R3 IDC1=1.3A IDC2=1.8A - 10µH ±20% RDC=0.0532Ω - TDK17 L4 Inductor RLF5018T-150MR76 IDC1=0.76A IDC2=1.0A - 15µH ±20% RDC=0.12Ω - TDK18 T1 Transformer CLQ52 5388-T095 - - - - - - - SUMIDA19 T2 Transformer CLQ52 5388-T095 - - - - - - - SUMIDA20 C1 Ceramic condenser C1608JB1H104K 50V - - 0.1µF ±10% B characteristic 1608 TDK21 C2 Ceramic condenser C1608JB1H104K 50V - - 0.1µF ±10% B characteristic 1608 TDK22 C3 Ceramic condenser C1608JB1H472K 50V - - 4700pF ±10% B characteristic 1608 TDK23 C4 Ceramic condenser C3216JB1E105K 25V - - 1µF ±10% B characteristic 3216 TDK24 C5 Ceramic condenser C3216JB1A475M 10V - - 4.7µF ±20% B characteristic 3216 TDK25 C6 Ceramic condenser C3216JB0J106K 6.3V - - 10µF ±10% B characteristic 3216 TDK26 C7 Ceramic condenser - - - - - - - - - Not mounting
27 C8 Ceramic condenser C3216JB1E105K 25V - - 1µF ±10% B characteristic 3216 TDK28 C9 Ceramic condenser C3216JB1E225K 25V - - 2.2µF ±10% B characteristic 3216 TDK29 C10 Ceramic condenser C3216JB1E225K 25V - - 2.2µF ±10% B characteristic 3216 TDK30 C11 Ceramic condenser C3216JB1E225K 25V - - 2.2µF ±10% B characteristic 3216 TDK31 C12 Ceramic condenser - - - - - - - - - Not mounting
32 C13 Ceramic condenser C3216JB1E105K 25V - - 1µF ±10% B characteristic 3216 TDK33 C14 Ceramic condenser C3216JB1E225K 25V - - 2.2µF ±10% B characteristic 3216 TDK34 C15 Ceramic condenser C3216JB1E225K 25V - - 2.2µF ±10% B characteristic 3216 TDK35 C16 Ceramic condenser C1608JB1H472K 50V - - 4700pF ±10% B characteristic 1608 TDK36 C17 Ceramic condenser C3216JB1E105K 25V - - 1µF ±10% B characteristic 3216 TDK37 C18 Ceramic condenser C3216JB1A475M 10V - - 4.7µF ±20% B characteristic 3216 TDK38 C19 Ceramic condenser C3216JB0J106K 6.3V - - 10µF ±10% B characteristic 3216 TDK39 C20 Ceramic condenser C1608JB1H104K 50V - - 0.1µF ±10% B characteristic 1608 TDK40 C21 Ceramic condenser C1608JB1H104K 50V - - 0.1µF ±10% B characteristic 1608 TDK41 C22 Ceramic condenser C1608JB1H104K 50V - - 0.1µF ±10% B characteristic 1608 TDK42 C23 Ceramic condenser C1608JB1H104K 50V - - 0.1µF ±10% B characteristic 1608 TDK43 C24 Ceramic condenser C1608JB1H104K 50V - - 0.1µF ±10% B characteristic 1608 TDK44 C25 Ceramic condenser C1608JB1H473K 50V - - 0.047µF ±10% B characteristic 1608 TDK45 C26 Ceramic condenser C1608JB1H104K 50V - - 0.1µF ±10% B characteristic 1608 TDK46 C27 Ceramic condenser C1608JB1H473K 50V - - 0.047µF ±10% B characteristic 1608 TDK47 C28 Ceramic condenser C1608JB1H103K 50V - - 0.01µF ±10% B characteristic 1608 TDK48 C29 Ceramic condenser C1608CH1H101J 50V - - 100pF ±5% CH characteristic 1608 TDK
Parts No. RemarkNo. Item VendorPackageSpecification
17/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
< Continued >
Component(Circuit diagram mark) Rated1 Rated2 Rated3 Value Deviation Characteristic
52 R1 Jumper - 1/16W - - 0 Ω max 50mΩ - 1608 -
53 R2 Jumper - 1/16W - - 0 Ω max 50mΩ - 1608 -
54 R3 Jumper - 1/4W - - 0 Ω max 50mΩ - 3216 -
55 R4 Resistor PR0816P-151-D 1/16W - - 150Ω ±0.5% ±25ppm/ºC 1608 ssm56 R5 Jumper - 1/4W - - 0 Ω max 50mΩ - 3216 -
57 R6 Jumper - 1/16W - - 0 Ω max 50mΩ - 1608 -
58 R9 Jumper - 1/4W - - 0 Ω max 50mΩ - 3216 -
59 R10 Jumper - 1/16W - - 0 Ω max 50mΩ - 1608 -
60 R11 Jumper - 1/4W - - 0 Ω max 50mΩ - 3216 -
61 R12 Resistor PR0816P-301-D 1/16W - - 300Ω ±0.5% ±25ppm/ºC 1608 ssm62 R13 Resistor PR0816P-332-D 1/16W - - 3.3kΩ ±0.5% ±25ppm/ºC 1608 ssm63 R14 Resistor PR0816P-123-D 1/16W - - 12kΩ ±0.5% ±25ppm/ºC 1608 ssm64 R15 Resistor PR0816P-153-D 1/16W - - 15kΩ ±0.5% ±25ppm/ºC 1608 ssm65 R16 Resistor PR0816P-102-D 1/16W - - 1kΩ ±0.5% ±25ppm/ºC 1608 ssm66 R17 Resistor PR0816P-183-D 1/16W - - 18kΩ ±0.5% ±25ppm/ºC 1608 ssm67 R18 Resistor PR0816P-133-D 1/16W - - 13kΩ ±0.5% ±25ppm/ºC 1608 ssm68 R19 Resistor PR0816P-302-D 1/16W - - 3kΩ ±0.5% ±25ppm/ºC 1608 ssm69 R20 Resistor PR0816P-223-D 1/16W - - 22kΩ ±0.5% ±25ppm/ºC 1608 ssm70 R21 Resistor PR0816P-153-D 1/16W - - 15kΩ ±0.5% ±25ppm/ºC 1608 ssm71 R22 Resistor PR0816P-102-D 1/16W - - 1kΩ ±0.5% ±25ppm/ºC 1608 ssm72 R23 Resistor PR0816P-183-D 1/16W - - 18kΩ ±0.5% ±25ppm/ºC 1608 ssm73 R24 Resistor PR0816P-133-D 1/16W - - 13kΩ ±0.5% ±25ppm/ºC 1608 ssm74 R25 Resistor PR0816P-242-D 1/16W - - 2.4kΩ ±0.5% ±25ppm/ºC 1608 ssm75 R26 Resistor PR0816P-433-D 1/16W - - 43kΩ ±0.5% ±25ppm/ºC 1608 ssm76 R27 Resistor PR0816P-153-D 1/16W - - 15kΩ ±0.5% ±25ppm/ºC 1608 ssm77 R28 Resistor PR0816P-202-D 1/16W - - 2kΩ ±0.5% ±25ppm/ºC 1608 ssm78 R29 Resistor PR0816P-333-D 1/16W - - 33kΩ ±0.5% ±25ppm/ºC 1608 ssm79 R30 Resistor PR0816P-203-D 1/16W - - 20kΩ ±0.5% ±25ppm/ºC 1608 ssm80 R31 Resistor PR0816P-242-D 1/16W - - 2.4kΩ ±0.5% ±25ppm/ºC 1608 ssm81 R32 Resistor PR0816P-433-D 1/16W - - 43kΩ ±0.5% ±25ppm/ºC 1608 ssm82 R33 Resistor PR0816P-153-D 1/16W - - 15kΩ ±0.5% ±25ppm/ºC 1608 ssm83 R34 Resistor PR0816P-202-D 1/16W - - 2kΩ ±0.5% ±25ppm/ºC 1608 ssm84 R35 Resistor PR0816P-333-D 1/16W - - 33kΩ ±0.5% ±25ppm/ºC 1608 ssm85 R36 Resistor PR0816P-203-D 1/16W - - 20kΩ ±0.5% ±25ppm/ºC 1608 ssm86 R37 Resistor PR0816P-243-D 1/16W - - 24kΩ ±0.5% ±25ppm/ºC 1608 ssm87 SW1 DIP SWITCH DMS-6H - - - - - - - MATSUKYU
88 PIN Wiring terminal WT-2-1 - - - - - - - Mac-Eight
SpecificationPackage Vendor RemarkNo. Item Parts No.
18/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
Vo1 (V) = 1.24 / R15 × (R13 + R14 + R15)
(1) Output voltage setting
(3) Soft-start time
(2) Oscillation frequency
fosc (kHz) = 1200000 / (C29(pF) × R37(kΩ))
≅ 2.5 (V)
ts (s) = 0.124 × C20 (µF) ≅ 12.4 (ms)
≅ 500 (kHz)
Vo2 (V) = 1.24 / R21 × (R19 + R20 + R21)
CH1
CH2 ≅ 3.3 (V)
CH1
CH2 ts (s) = 0.124 × C22 (µF) ≅ 12.4 (ms)
(4) Short-circuit detection time
tscp (s) = 0.70 × C28 (µF) ≅ 7.0 (ms)
Vo3-2 (V) = 1.24 / R27 × (R25 + R26 + R27) ≅ 5.0 (V)
Vo4-2 (V) = 1.24 / R33 × (R31 + R32 + R33)
CH3
CH4 ≅ 5.0 (V)
ts (s) = 0.124 × C24 (µF) ≅ 12.4 (ms) CH3
CH4 ts (s) = 0.124 × C26 (µF) ≅ 12.4 (ms)
8.8. InitializationInitialization
19/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
Total efficiency-iiiinput voltage
60
65
70
75
80
85
90
95
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input voltage VIN(V)
Tota
l effi
cien
cy η
(%)
CH1:ZETAVo1=2.5V, Io1=250mACH2:SEPICVo2=3.3V, Io2=500mACH3:TransformerVo3-1=15V, Io3-1=10mAVo3-2=5V, Io3-2=50mACH4:Transformer(Include tttthe own pow er supply)Vo4-1=15V, Io4-1=10mAVo4-2=5V, Io4-2=50mAVo4-3=-7.5V, Io4-3=-5mAfosc=500kHz
(1) (1) Conversion efficiency Conversion efficiency –– Input voltageInput voltage
Total efficiencyTotal efficiency
Each channel efficiencyEach channel efficiency
9. 9. Reference DataReference Data
Each channel efficiency----input voltage
60
65
70
75
80
85
90
95
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input voltage VIN(V)
Each
cha
nnel
effi
cien
cy η
(%)
Note) Concerned channel and CH4 (ownpower supply) are turned on.External SW Tr driving current is contains .IC consumption current is included in CH4.
CH1
CH3CH4
CH2
20/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
CH3/CH4 output voltage-load current((((Load regulation))))
0
1
2
3
4
5
6
7
0 10 20 30 40 50
Load current Io(mA)
DC
/DC
con
verte
r out
put v
olta
ge (V
)
Note) Transformer using channel acquires onlythe output to which the feedback control is done.Vo3-1 and Vo4-1 : Io=10mA fixVo4-3 : Io=-5mA fix
Vo4-2=5V setting
Vo3-2=5V setting
(2) (2) Load regulation (VLoad regulation (VININ=3V)=3V)
CH1CH1
CH2CH2
CH3,CH4CH3,CH4
CH1111 output voltage-load current((((Load regulation))))
0
1
2
3
4
5
0 50 100 150 200 250 300
Load current Io(mA)
DC
/DC
con
verte
r out
put v
olta
ge (V
)
Vo1=2.5V setting
CH2 output voltage-load current((((Load regulation))))
2
3
4
5
0 100 200 300 400 500
Load current Io(mA)
DC
/DC
con
verte
r out
put v
olta
ge (V
)
Vo2=3.3V setting
21/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
(3) (3) Line regulationLine regulation
Output is a feedback control. Output is a feedback control.
Output is a feedback control none. Output is a feedback control none.
Output voltage-input voltage((((Line regulation:output is feedback control ))))
1
2
3
4
5
6
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input voltage VIN(V)
DC
/DC
con
verte
r out
put v
olta
ge (V
)
Vo1=2.5V setting
Vo3-2=5V setting
Vo2=3.3V setting
Vo4-2=5V setting
Output voltage-input voltage((((Line regulation:output is feedback control none))))
12
13
14
15
16
17
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input voltage VIN(V)
DC
/DC
con
verte
r out
put v
olta
ge (V
)
Vo4-1=15V setting
Vo3-1=15V setting
Output voltage-input voltage((((Line regulation:output is feedback control none ))))
-10
-9
-8
-7
-6
-5
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input voltage VIN(V)
DC
/DC
con
verte
r out
put v
olta
ge (V
)
Vo4-3=-7 .5V set t ingVo4-3=-7 .5V set t ingVo4-3=-7 .5V set t ingVo4-3=-7 .5V set t ing
VCC(own power supply voltgae)-input voltage((((Line regulation:output is feedback control none))))
3
4
5
6
7
8
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0Input voltage VIN(V)
VC
C(o
wn
pow
er s
uppl
y vo
ltage
) (V)
Output is a feedback control none. Output is a feedback control none.
Output is a feedback control none. Output is a feedback control none.
22/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
10. 10. Parts Select MethodParts Select Method
PNP Tr Inductor(L1)
Board Photograph
Schottky Barrier Diode
Schottky Barrier Diode
Output Smoothing Condenser
Output Smoothing Condenser
Transformer
Output Smoothing Condenser
CH1
CH2
CH3
CH4
NPN Tr Inductor(L2)
Inductor(L3)Inductor(L4)
N-ch MOS FET
Schottky Barrier Diode
Base current setting resistor
23/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
CH1 : 2.5V output(Zeta)VIN(min)=1.7V,Io=250mA,fosc=500kHz
1. PNP Tr(CPH3106(SANYO))VCEO=-12V, VCBO=-15V, IC=-3A,hFE=200(min)
Collector-emitter voltage and collector-base voltageCollector-emitter voltage and collector-base voltage of Tr should be in the rated voltage value of Tr.When the collector-emitter voltage of Tr is assumed to be VCEO, and the collector-base voltage is assumed to beVCBO, VCEO and VCBO are obtained by the following formula.
The parts selection method is written in the following.
Collector current : Peak valueThe peak value of the collector current of Tr should be in the rated current value of Tr. When the peak value of the collector current of Tr is assumed to be IC, IC is obtained by the following formula.
ONIN(min)21
OIN(min)
IN(min)OC tV
L1
L1
21I
VVV
I ××××××××
++++++++××××
++++≥≥≥≥
0.732A≥≥≥≥
0.6010500
1711015
11022
1210.25
1.7712.5
36-6- ××××××××
××××××××
××××++++
××××++++××××++++≥≥≥≥ ..
OFF
ONINO t
tVV ××××====
OIN
OON VV
Vtt++++
××××====
*)
OIN
O
VVV
fosc1
++++××××====
OIN(max)CBOCEO VVVV ++++≥≥≥≥====
525 .++++≥≥≥≥
7.5V≥≥≥≥
24/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
Diode current : Peak valueThe peak value of the diode current should be in the rated current value of the diode. When the peak value of the diode current is assumed to be IFSM, IFSM is obtained by the followingformula.
Diode current : Average valueThe average value of the diode current should be in the rated current value of the diode. When the average value of the diode current is assumed to be IF, IF is obtained by the following formula.
2. Schottky Barrier Diode(SBS004(SANYO))VF=0.35V(max) : at IF = 1A, VRRM=15V, IF = 1A, IFSM=10A,
Repetition peak reverse voltageThe repetition peak reverse voltage of the diode should be in the rated voltage value of the diode. When the repetition peak reverse voltage of the diode is assumed to be VRRM,VRRM is obtained by the following formula.
OFFO21
OIN(min)
IN(min)OFSM tV
L1
L1
21I
VVV
I ××××××××
++++++++××××
++++≥≥≥≥
0.60)(110500
12.51015
11022
1210.25
1.71.72.5
36-6- −−−−××××××××
××××××××
××××++++
××××++++××××++++≥≥≥≥
0.732A≥≥≥≥
OF II ≥≥≥≥
0.25A≥≥≥≥
OIN(max)RRM VVV ++++≥≥≥≥
7.5V≥≥≥≥
2.55 ++++≥≥≥≥
25/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
3. Inductor (L1 : RLF5018T-220MR63 : TDK)22µH(tolerance : ±20%), rated current = 0.63A
Inductor current : peak valueThe peak value of the inductor current should be in the rated current value of the inductor.
Load current value which becomes continuous current condition.
When the peak value of the inductor current is assumed to be IL, IL is obtained by the following formula.
The condition of L because of a continuous current in the range of the use voltage
ONOO
2IN(max) t
V2IV
L ××××≥≥≥≥
0.33310500
12.50.252
53
2
××××××××
××××××××××××
≥≥≥≥
13.3uH≥≥≥≥
ONO
2IN(max)
O t2LV
VI ××××≥≥≥≥
0.33310500
12.510222
536
2
××××××××
××××××××××××××××
≥≥≥≥ −−−−
0.151A≥≥≥≥*) The continuous current condition becomes a large current value compared with
the current value obtained by L2.
ONIN(min)
OIN(min)
OL t
2LV
IV
VI ××××++++≥≥≥≥
0.6010500
110222
1.70.251.72.5
36 ××××××××
××××××××××××
++++××××≥≥≥≥ −−−−
0.414A≥≥≥≥
26/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
4. Inductor (L2 : RLF5018T-150MR76 : TDK)15µH(tolerance : ±20%), rated current = 0.76A
Inductor current : peak valueThe peak value of the inductor current should be in the rated current value of the inductor.
Load current value which becomes continuous current condition.
When the peak value of the inductor current is assumed to be IL, IL is obtained by the following formula.
The condition of L because of a continuous current in the range of the use voltage
*) The continuous current condition becomes a large current value compared with
the current value obtained by L1.
ONO
IN(max) t2I
VL ××××≥≥≥≥
0.33310500
10.2525
3 ××××××××
××××××××
≥≥≥≥
6.7uH≥≥≥≥
ONIN(max)
O t2L
VI ××××≥≥≥≥
0.33310500
110152
536 ××××
××××××××
××××××××≥≥≥≥ −−−−
0.111A≥≥≥≥
ONIN(max)
OL t2L
VII ××××++++≥≥≥≥
0.33310500
110152
50.25 36 ××××××××
××××××××××××
++++≥≥≥≥ −−−−
0.361A≥≥≥≥
27/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
5. Base current setting resistor(RR0816P151D:ssm) 150Ω
The collector peak current which flows to external Tr becomes 0.732A at the Vin=1.7V. If hfe is 200, 3.66mA or more should be able to flow into the base. When the current base setting resistor is assumed to be RB, RB is obtained by the following formula.
B
BEIN(min)B
IV-VR ≤≤≤≤
0.003660.7-1.7≤≤≤≤
Ω273.2≤≤≤≤
28/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
CH2:3.3V output(Sepic)VIN(min)=1.7V,Io=500mA,fosc=500kHz
1. NPN Tr(CPH3206(SANYO))VCEO=15V, VCBO=15V, IC=3A,hFE=200(min)
Collector-emitter voltage and collector-base voltageCollector-emitter voltage and collector-base voltage of Tr should be in the rated voltage value of Tr.When the collector-emitter voltage of Tr is assumed to be VCEO, and the collector-base voltage is assumed to beVCBO, VCEO and VCBO are obtained by the following formula.
Collector current : Peak valueThe peak value of the collector current of Tr should be in the rated current value of Tr. When the peak value of the collector current of Tr is assumed to be IC, IC is obtained by the following formula.
ONIN(min)21
OIN(min)
IN(min)OC tV
L1
L1
21I
VVV
I ××××××××
++++++++××××
++++≥≥≥≥
1.66A≥≥≥≥
0.6610500
1711015
11010
1210.5
1.7713.3
36-6- ××××××××
××××××××
××××++++
××××++++××××++++≥≥≥≥ ..
OFF
ONINO t
tVV ××××====
OIN
OON VV
Vtt++++
××××====
*)
OIN
O
VVV
fosc1
++++××××====
OIN(max)CBOCEO VVVV ++++≥≥≥≥====
3.35 ++++≥≥≥≥
8.3V≥≥≥≥
29/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
Diode current : Peak valueThe peak value of the diode current should be in the rated current value of the diode. When the peak value of the diode current is assumed to be IFSM, IFSM is obtained by the followingformula.
Diode current : Average valueThe average value of the diode current should be in the rated current value of the diode. When the average value of the diode current is assumed to be IF, IF is obtained by the following formula.
2. Schottky Barrier Diode(SBS004(SANYO))VF=0.35V(max) : at IF = 1A, VRRM=15V, IF = 1A, IFSM=10A,
Repetition peak reverse voltageThe repetition peak reverse voltage of the diode should be in the rated voltage value of the diode. When the repetition peak reverse voltage of the diode is assumed to be VRRM,VRRM is obtained by the following formula.
OFFO21
OIN(min)
IN(min)OFSM tV
L1
L1
21I
VVV
I ××××××××
++++++++××××
++++≥≥≥≥
0.66)(110500
13.31015
11010
1210.5
1.71.73.3
36-6- −−−−××××××××
××××××××
××××++++
××××++++××××++++≥≥≥≥
1.66A≥≥≥≥
OF II ≥≥≥≥
0.5A≥≥≥≥
OIN(max)RRM VVV ++++≥≥≥≥
8.3V≥≥≥≥
3.35 ++++≥≥≥≥
30/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
3. Inductor (L3 : SLF6028T-100M1R3 : TDK)10µH(tolerance : ±20%), rated current = 1.3A
Inductor current : peak valueThe peak value of the inductor current should be in the rated current value of the inductor.
Load current value which becomes continuous current condition.
When the peak value of the inductor current is assumed to be IL, IL is obtained by the following formula.
The condition of L because of a continuous current in the range of the use voltage
*) The continuous current condition becomes a large current value compared with
the current value obtained by L4.
ONOO
2IN(max) t
V2IV
L ××××≥≥≥≥
0.39810500
13.30.52
53
2
××××××××
××××××××××××
≥≥≥≥
6.0uH≥≥≥≥
ONO
2IN(max)
O t2LV
VI ××××≥≥≥≥
0.39810500
13.310102
536
2
××××××××
××××××××××××××××
≥≥≥≥ −−−−
0.302A≥≥≥≥
ONIN(min)
OIN(min)
OL t
2LV
IV
VI ××××++++≥≥≥≥
0.6610500
110102
1.70.51.73.3
36 ××××××××
××××××××××××
++++××××≥≥≥≥ −−−−
1.08A≥≥≥≥
31/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
4. Inductor (L4 : RLF5018T-150MR76 : TDK)15µH(tolerance : ±20%), rated current = 0.76A
Inductor current : peak valueThe peak value of the inductor current should be in the rated current value of the inductor.
Load current value which becomes continuous current condition.
When the peak value of the inductor current is assumed to be IL, IL is obtained by the following formula.
The condition of L because of a continuous current in the range of the use voltage
*) The continuous current condition becomes a large current value compared with
the current value obtained by L3.
ONO
IN(max) t2I
VL ××××≥≥≥≥
0.39810500
10.52
53 ××××
××××××××
××××≥≥≥≥
3.98uH≥≥≥≥
ONIN(max)
O t2L
VI ××××≥≥≥≥
0.39810500
110152
536 ××××
××××××××
××××××××≥≥≥≥ −−−−
0.133A≥≥≥≥
ONIN(max)
OL t2L
VII ××××++++≥≥≥≥
0.39810500
110152
50.5 36 ××××××××
××××××××××××
++++≥≥≥≥ −−−−
0.633A≥≥≥≥
32/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
5. Base current setting resistor(RR0816P361D :ssm) 300Ω
The collector peak current which flows to external PNP becomes 1.66A at the Vin=1.7V(Vcco=4.2V). If hfe is 200, 8.3mA or more should be able to flow into the base. When the current base setting resistor is assumed to be RB, RB is obtained by the following formula.
B
BECCO(min)B
IV-VR ≤≤≤≤
0.00830.7-4.2≤≤≤≤
Ω421.7≤≤≤≤
33/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
CH3,CH4 : ((((Transformer conversion)
1. N-ch MOS FET(MCH3405(SANYO) )VDS=20V, VGS=±10V, ID=1.8A, RDS(on)=390mΩ(max), Qg=4.5nC(max)Ratings of the drain current of FET should be 0.9V or more. Moreover, ratings of drain-source voltage and gate-source voltage of FET should be 8V or more.
2. Schottky Barrier Diode(SB05-05CP(SANYO))VRRM=50V, IF=500mA, IFSM=5A,Ratings of the diode are VRRM (repetition peak reverse voltage)= each 43V, IF (average output current)=50mA, and should be IFSM (serge forward current)=0.3A or more.
VIN(max)=5VVIN(min)=1.7V
VO3-1, VO4-1 = 15VVO3-2 , VO4-2 = 5VVO4-3 = -7.5V
Io3-1 , IO4-1 = 10mAIo3-2 , IO4-2 = 50mAIo4-3 = -5mA, ,
34/34Fujitsu ASSP Product
Power Management
MB39A103 Evaluation Board ver2.0E
All Rights Reserved.The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU
sales representatives before ordering.The information and circuit diagrams in this document are presented as examples of semiconductor device
applications, and are not intended to be incorporated in devices for actual use.Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams.FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and
other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.).
CAUTION:Customers considering the use of our products in special applications where failure or abnormal operation may
directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions.
If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan.