eGaN® FET DATASHEET

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EPC2033

EPC2033 – Enhancement Mode Power Transistor

VDSS , 150 VRDS(on) , 7 mID , 48 A

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 60 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

EPC2033 eGaN® FETs are supplied only inpassivated die form with solder bumps. Die Size: 4.6 mm x 2.6 mm

• High Frequency DC-DC Conversion• Motor Drive• Industrial Automation• Class-D Audio

EFFICIENT POWER CONVERSION

Maximum Ratings

VDS Drain-to-Source Voltage (Continuous) 150 V

IDContinuous (TA = 25˚C, RθJA = 4˚C/W) 48

APulsed (25˚C, TPULSE = 300 µs) 260

VGSGate-to-Source Voltage 6

VGate-to-Source Voltage -4

TJ Operating Temperature -40 to 150˚C

TSTG Storage Temperature -40 to 150

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Static Characteristics (TJ= 25˚C unless otherwise stated)

BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.7 mA 150 V

IDSS Drain Source Leakage VDS = 120 V, VGS = 0 V 0.1 0.5 mA

mAIGSS

Gate-to-Source Forward Leakage VGS = 5 V 1 8 mA

Gate-to-Source Reverse Leakage VGS = -4 V 0.1 0.5

VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 9 mA 0.8 1.4 2.5

7

V

RDS(on) Drain-to-Source On Resistance VGS = 5 V, ID = 25 A 5 mΩ

VSD Source-to-Drain Forward Voltage VIS = 0.5 A, VGS = 0 V 1.9

Thermal Characteristics

RθJC Thermal Resistance, Junction to Case 0.45 ˚C/W

RθJB Thermal Resistance, Junction to Board 3.9 ˚C/W

RθJA Thermal Resistance, Junction to Ambient (Note 1) 45 ˚C/W

TYP UNIT

Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

All measurements were done with substrate shorted to source.

HAL

www.epc-co.com/epc/Products/eGaNFETs/EPC2033.aspx

eGaN® FET DATASHEET

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EPC2033

0

50

100

150

200

250

0 1 2 3 4 5 6

I D-D

rain

Cur

rent

(A)

VDS - Drain-to-Source Voltage (V)

VGS = 5 V

VGS = 4 V

VGS = 3 V

VGS = 2 V

VGS = 5 V

VGS = 4 V

VGS = 3 V

VGS = 2 V

250

200

150

100

50

00 1 2 3 4 5 6

I D –

Dra

in Cu

rrent

(A)

Figure 1: Typical Output Characteristics at 25°C

VDS – Drain-to-Source Voltage (V)

VGS = 5 VVGS = 4 VVGS = 3 VVGS = 2 V

20

15

10

5

03.0 3.5 4.0 4.5 5.0

R DS(o

n) –

Dra

in-to

-Sou

rce R

esist

ance

(mΩ)

VGS – Gate-to-Source Voltage (V)

ID = 10 AID = 25 AID = 50 AID = 100 A

Figure 3: RDS(on) vs. VGS for Various Drain Currents

I D –

Dra

in Cu

rrent

(A)

VGS – Gate-to-Source Voltage (V) 1.00.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Figure 2: Transfer Characteristics

25˚C125˚C

VDS = 3 V

25˚C125˚C

VDS = 6 V

250

200

150

100

50

0

3.0 3.5 4.0 4.5 5.0

Figure 4: RDS(on) vs. VGS for Various Temperatures

R DS(

on) –

Dra

in-to

-Sou

rce R

esist

ance

(mΩ)

VGS – Gate-to-Source Voltage (V)

25˚C125˚C

VDS = 3 V

25˚C125˚C

ID = 25 A

20

15

10

5

0

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

CISS Input Capacitance

pFCOSS Output Capacitance

RG Gate Resistance Ω

COSS(ER)E�ective Output Capacitance,

Energy Related (Note 2)

COSS(TR)E�ective Output Capacitance,

Time Related (Note 3)

nCQGD Gate-to-Drain Charge

QG(TH) Gate Charge at Threshold

Source-to-Drain Recovery Charge

QGS Gate-to-Source Charge

QOSS Output Charge

QRR

1400

720

QG Total Gate Charge 15

135

Note 2: COSS(ER) is a �xed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% BVDSS.Note 3: COSS(TR) is a �xed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% BVDSS.

VDS = 120

VDS = 0 to 120 V, VGS = 0 V

V, VGS = 0 V

VDS = 120 V, VGS = 5 V, ID = 25 A

VDS = 120 V, ID = 25 A

VDS = 120 V, V = 0 VGS

CRSS Reverse Transfer Capacitance

1160

6

480

670

900

0.5

12

3.8

3.2

2.8

90

0

eGaN® FET DATASHEET

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EPC2033

All measurements were done with substrate shortened to source. TJ= 25°C unless otherwise stated.

Capa

citan

ce (p

F)

1000

100

10

10 50 100 150

Figure 5b: Capacitance (Log Scale)

VDS – Drain-to-Source Voltage (V)

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

0.50 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

I SD –

Sour

ce-to

-Dra

in Cu

rrent

(A)

VSD – Source-to-Drain Voltage (V)

Figure 7: Reverse Drain-Source Characteristics150

100

50

0

25˚C125˚C

VDS = 3 V

25˚C125˚C

VGS = 0 V

Figure 9: Normalized Threshold Voltage vs. Temperature

Norm

alize

d Th

resh

old

Volta

ge

1.40

1.30

1.20

1.10

1.00

0.90

0.80

0.70

0.600 25 50 75 100 125 150

TJ – Junction Temperature (°C)

ID = 11 mAID = 8 mA

Capa

citan

ce (p

F)

0 50 100 150

Figure 5a: Capacitance (Linear Scale)

VDS – Drain-to-Source Voltage (V)

2000

1500

1000

500

0

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

Figure 6: Gate Charge

V GS

– Ga

te-to

-Sou

rce V

olta

ge (V

)

5

4

3

2

1

00 10 128642

QG – Gate Charge (nC)

ID = 25 AVDS = 120 V

Figure 8: Normalized On-State Resistance vs. Temperature

ID = 30 AVGS = 5 V

Norm

alize

d On

-Sta

te R

esist

ance

RDS

(on)

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.60 25 50 75 100 125 150

TJ – Junction Temperature (°C)

ID = 25 AVGS = 5 V

eGaN® FET DATASHEET

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EPC2033

Figure 12: Transient Thermal Response Curves

0.1

1

10

100

0.1 1 10 100

I D – D

rain

Curre

nt (A

)

VDS - Drain-Source Voltage (V)

Limited by RDS(on)

Pulse Width 100 ms

10 ms 1 ms

100 µs

Figure 11: Safe Operating Area

TJ = Max Rated, TC = +25°C, Single Pulse

I G –

Gate

Curre

nt (m

A)

VGS – Gate-to-Source Voltage (V)

Figure 10: Gate Leakage Current

25˚C125˚C

40

30

20

10

00 1 2 3 4 5 6

tp, Rectangular Pulse Duration, seconds

Z θJC

, Nor

mal

ized T

herm

al Im

peda

nce

0.5

0.050.02

Single Pulse

0.01

0.1

Duty Cycle:

Junction-to-Case

PDM

t1

t2

10-510-6 10-4 10-3 10-2 10-1 1

1

0.1

0.01

0.001

0.0001

Notes:Duty Factor: D = t1/t2

Peak TJ = PDM x ZθJC x RθJC + TC

tp, Rectangular Pulse Duration, seconds

Z θJB

, Nor

mal

ized T

herm

al Im

peda

nce

0.5

0.1

0.020.05

Single Pulse

0.01

Duty Cycle:

Junction-to-Board

PDM

t1

t2

10-5 10-4 10-3 10-2 10-1 1

1

0.1

0.01

0.001

0.0001

Notes:Duty Factor: D = t1/t2

Peak TJ = PDM x ZθJB x RθJB + TB

10+1

eGaN® FET DATASHEET

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EPC2033

2033 YYYY

ZZZZ Die orientation dot

Gate Pad bump is under this corner

Part Number

Laser Marking

Part #Marking Line 1

Lot_Date CodeMarking Line 2

Lot_Date CodeMarking Line 3

EPC2033 2033 YYYY ZZZZ

DIE MARKINGS

TAPE AND REEL CONFIGURATION4mm pitch, 12mm wide tape on 7” reel

7” reel

a

d e f g

c

b

EPC2033 (note 1) Dimension (mm) target min max

a 12.00 11.70 12.30b 1.75 1.65 1.85

c (see note) 5.50 5.45 5.55 d 4.00 3.90 4.10 e 4.00 3.90 4.10

f (see note) 2.00 1.95 2.05 g 1.50 1.50 1.60

Note 1: MSL 1 (moisture sensitivity level 1) classi�ed according to IPC/JEDEC industry standard.Note 2: Pocket position is relative to the sprocket hole measured as true position of the pocket, not the pocket hole.

Dieorientation

dot

Gatesolder bump is

under thiscorner

Die is placed into pocketsolder bump side down

(face side down)

Loaded Tape Feed Direction

2033 Pads 1 and 2 are Gate;

Pads 5, 6, 7, 8, 9, 15, 16, 17, 18, 19 are Drain;

Pads 3, 4, 10, 11, 13, 14, 20, 21, 22, 23, 24 are Source;

Pad 12 is Substrate

DIE OUTLINESolder Bump View

Side View

DIM MIN Nominal MAX

A 4570 4600 4630B 2570 2600 2630c 1000 1000 1000d 500 500 500e 285 300 315f 332 369 406

510 t

yp

SEATING PLANE

79

0 typ

280+

/−28

B

A

cX4

e

e

155 10 20

d X4

f

1

166 11 212

177 12 22

188 13 233

199 14 244

Micrometers

eGaN® FET DATASHEET

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EPC2033

Information subject to change without notice.

Revised December, 2016

Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others.

eGaN® is a registered trademark of Efficient Power Conversion Corporation.U.S. Patents 8,350,294; 8,404,508; 8,431,960; 8,436,398; 8,785,974; 8,890,168; 8,969,918; 8,853,749; 8,823,012

RECOMMENDEDLAND PATTERN (units in µm)

Pads 1 and 2 are Gate;

Pads 5, 6, 7, 8, 9, 15, 16, 17, 18, 19 are Drain;

Pads 3, 4, 10, 11, 13, 14, 20, 21, 22, 23, 24 are Source;

Pad 12 is Substrate

Land pattern is solder mask definedSolder mask opening is 330 µmIt is recommended to have on-Cu trace PCB vias

2600

4600

1000X4

300

300

500

X4330

155 10 201

166 11 212

177 12 22

188 13 233

199 14 244

RECOMMENDEDSTENCIL DRAWING (units in µm)

RECOMMENDEDSTENCIL DRAWING (units in µm)

Recommended stencil should be 4mil (100 µm) thick, must be laser cut, openings per drawing.

Additional assembly resources available at http://epc-co.com/epc/DesignSupport/AssemblyBasics.aspx

Recommended stencil should be 4mil (100 µm) thick, must be laser cut, openings per drawing.

Additional assembly resources available at http://epc-co.com/epc/DesignSupport/AssemblyBasics.aspx

2600

4600

1000X4

300

300

500

X4

330

2600

4600

1000300

300

500

300

350

Option 1 : Intended for use with SAC305 Type 4 solder.

Option 2 : Intended for use with SAC305 Type 3 solder.