Www.epc-co.com 1 EPC - The Leader in eGaN® FETs October 2012 Alex Lidow, CEO Efficient Power Conversion Corporation October 2012 The eGaN ® FET Journey

www.epc-co.com 1EPC - The Leader in eGaN® FETs October 2012

Alex Lidow, CEO Efficient Power Conversion Corporation

October 2012

The eGaN® FET Journey Continues

PSMA Power Technology Roadmap

www.epc-co.com 2EPC - The Leader in eGaN® FETs October 2012 2

• GaN Business Overview

• What Impacts the Adoption Rate

• Making GaN Easy to Use Now and In the Future

• New Applications for GaN

• Cost Roadmaps and Comparisons

• Reliability

• Summary

Agenda


Business Overview


0%

10%

20%

30%

40%

50%

4% 5% 6% 7% 8%

Perc

ent S

hare

of 2

010

Pow

er Tr

ansi

stor

M

arke

t

2010-2015 CAGR

Served Available Market (SAM)

Total = $12B in 2015Source: IC Insights

Power FET(up to 200V)

$4.6B

IGBT modules$2.3B

IGBTs$878M

Power FET(over 200V)

$1.7BRF/Microwave$1.3B

Bipolar$970M

Bipolar Modules$49M

FET Modules$232M

EPC’s initial product

Mostly 600 V


Power ICs Add to the SAM

Total = $18B in 2015

$0

$2

$4

$6

$8

$10

$12

$14

$16

$18M

arke

t Siz

e ($

B)

Transistors

Power Module

Power IC

Source: Yole Development


GaN Market Projection

EPC believes these projections are too optimistic and that 2015 GaN revenues will be less than $100M including RF

Source: Yole Development


Adoption


1. Make GaN Devices Easy to Use

2. Develop Applications beyond Silicon’s Capabilities

3. Make GaN Cost Effective

4. Establish GaN’s Reliability

What Controls Adoption?


Making GaN Easy to Use


It’s just like a MOSFET

Is an eGaN® FET easy to use?

except

The high frequency capability makes circuits using eGaN FETs sensitive to layout

The lower VG(MAX) of 6 V makes it advisable to have VGS regulation in your gate drive circuitry


Ecosystem Development

Texas Instruments– Driver ICs and multi-chip modules

Microsemi– Hi Rel and Radiation Hard Transistors


Universities With GaN Programs

• University of California at Santa Barbara• Virginia Polytechnic University• Renssalaer Polytechnic Institute• Hong Kong University of Science and Technology• Cornell University• Katholieke Universiteit Leuven• University of Bristol• University of Glasgow• University of Sheffield• University of Warsaw• University of Sydney• Massachusetts Institute of Technology• Cambridge University • National Central University of Taiwan

Universities all over the world are graduating well-trained engineers experienced in the use of eGaN FETs.


Driver On Board

Beyond Discrete Devices

Full-Bridge with Driver and Level Shift

Discrete FET with Driver


What Other Advances are Needed?

• High speed digital controller ICs and

integrated controller/driver ICs.– Application specific controllers to reduce

time-to-market– Dynamic deadtime control with ~1ns

resolution– Synchronous PFCs– Envelope Tracking Controllers

• Note: Improvements in magnetics would be

helpful…


• Enhancement Mode eGaN FETs are just like MOSFETs

• Developing an ecosystem of strategic partners and compatible

products

• Supporting University Research

• PhD –Level Applications Engineering• Training Engineers through Applications and Seminars• The first GaN Transistor Textbook• Demonstration Boards and Development Kits

• Highly Experienced Field Applications Engineering for customer

training

• Monolithic GaN ICs

Making eGaN® FETs Easy to Use


Developing New Applications


New Applications Enabled by eGaN® FETs

• Wireless Power Transmission• RF DC-DC “Envelope Tracking”• High Energy Pulsed Lasers• RadHard


Wireless Power$15.1 B Market by 2020*

eGaN FETs enable higher efficiency and operation at safer frequencies


Envelope TrackingLTE Infrastructure forecasted to grow to $24B in 2013*

Envelope Tracking can double base station efficiency


LiDAR - Pulsed Laser

$330M market estimate for 2011*eGaN FETs enable faster and larger laser pulses

800 A


Rad Hard$100M Market for Rad Hard MOSFETs

eGaN FETs withstand more than 10x radiation and enable higher system efficiency


Other Key Applications

• Power Over Ethernet• RF Transmission• Network and Server Power Supplies• Power Factor Correction• Point of Load Modules• Solar Microinverters• Energy Efficient Lighting• Class D Audio


Making GaN Cost Effective


Silicon vs eGaN® FET Costs

Starting Material

Epi Growth

Wafer Fab

Test

Assembly

OVERALL

2012 2015

same same

higher

same

same

lower

lower

same

lower

~same

~samehigher


Cascode vs Enhancement Mode

Gate

Source

Drain

Cascode devices combine a depletion mode GaN transistor with a low voltage enhancement mode MOSFET


Establishing GaN’s Reliability


eGaN® FETs are Reliable

27

00.20.40.60.8

11.21.41.61.8

2

0 200 400 600 800 1000

Nor

mal

ized

Rds

on

Stress Hours

EPC2001 RDS(ON) after 100VDS HTRB at 125oC

00.20.40.60.8

11.21.41.61.8

2

0 200 400 600 800 1000

Vth

(V)

Stress Hours

EPC2001 VGS(TH) after 100VDS HTRB at 125oC

0.0E+00

1.0E-04

2.0E-04

3.0E-04

4.0E-04

5.0E-04

0 200 400 600 800 1000

Idss

@40

V (A

)

Stress Hours

EPC2015 Idss after 40V H3TRB at 85oC/85%RH

datasheet spec: 500uA max

0.9

0.95

1

1.05

1.1

0 1000 2000 3000

No

rmal

ized

Effi

cien

cy

Stress Hours

EPC9001 Efficiency after Op Life Test at 85oC TJ

board a

board b

board c

board d

board e


Summary

• eGaN® technology is disruptive

• EPC has been in production for 3 years

• GaN-enabled applications have surfaced

• GaN infrastructure is developing

• eGaN FET costs are coming down rapidly

• eGaN FETs are reliable

• GaN adoption rate is accelerating


The end of the road for silicon…..

is the beginning of the eGaN FET

journey!

Documents

Www.epc-co.com 1 EPC - The Leader in eGaN® FETs October 2012 Alex Lidow, CEO Efficient Power Conversion Corporation October 2012 The eGaN ® FET Journey