EPC - The Leader in eGaN ® FETs |

Efficient Power Conversion Corporation

The eGaN® FET Journey Continues

GaN Transistors for Efficient Power Conversion Alex Lidow

CEO

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

• Overview of eGaN FET Technology

• Improving Power Conversion Efficiency

• What is in the future?

2

Agenda

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs | 3

Overview of eGaN® FET Technology

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs | 4

Dielectric

GaN - - - - - - - - - - - - - - -

Si

AlGaN Electron Generating Layer

Aluminum Nitride Isolation Layer

D G S - - - -

eGaN® FET Structure

Two Dimensional Electron Gas (2DEG)

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

SEM of an eGaN® FET

eGaN® Is A Registered Trademark Of The Efficient Power Conversion Corporation 5

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Flip-Chip LGA Construction

Printed Circuit Board

Copper Trace

eGaN FET Silicon Solder

Bar

Absolute Minimum Lead Resistance and Inductance!

6

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Size Comparison

D-PAK

eGaN® FET

Drawn To Scale

5.76 mm²

65.3 mm²

7

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs | 8

Opportunity to Improve DC-DC Efficiency

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Integrated Gate Driver Solution

LM5113 from Texas Instruments

9

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Buck Converter

Advantage: • High power density

and high efficiency

10

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Efficiency vs Frequency

62%

64%

66%

68%

70%

72%

74%

76%

78%

80%

82%

84%

86%

88%

90%

92%

300 400 500 600 700 800

Effi

cien

cy (%

)

Switching Frequency (kHz)

MOSFET @ 12Vin

MOSFET @ 24Vin

MOSFET @ 48Vin

eGaN FET @ 12Vin

eGaN FET @ 24Vin

eGaN FET @ 48Vin

1.2 Vout / 5A

11

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Parallel FET Buck Converter Efficiency at 1 MHz

12 VIN – 1.2 VOUT

12

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Isolated Full Bridge Converter

Advantage: • Isolation and high power

density at high power 36~75 V 12 V 15 A 180 W

~48 V ~53V

700 W 2-phase

13

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Isolated Full Bridge Converter

14

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

84%

86%

88%

90%

92%

94%

96%

0 2 4 6 8 10 12 14 16

Effi

cien

cy

Output Current (A)

36 V eGaN FET

36 V MOSFET

48 V eGaN FET

48 V MOSFET

60 V eGaN FET

60 V MOSFET

eGaN FET @ 333 kHz vs MOSFET @ 250 kHz

Isolated Full Bridge Converter

15

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

PoE-PSE Full Bridge Converter

16

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

88%

89%

90%

91%

92%

93%

94%

95%

96%

97%

98%

0 2 4 6 8 10 12 14

Effic

ienc

y

Output Current (A)

38 V eGaN FET 38 V MOSFET

48 V eGaN FET 48 V MOSFET

60 V eGaN FET 60 V MOSFET

PoE-PSE Full Bridge Converter

140 kHz MOSFET

250 kHz eGaN FET

550 W

700 W

17

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

PoE-PSE Full Bridge Converter

88%

89%

90%

91%

92%

93%

94%

95%

96%

97%

98%

0 2 4 6 8 10 12 14

Effic

ienc

y

Output Current (A)

38 V Two phase 38 V Single phase

48 V Two phase 48 V Single phase

60 V Two phase 60 V Single phase

18

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs | 19

What is in the Future?

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Breaking Down the Barriers

• Does it enable significant new capabilities?

• Is it easy to use? • Is it VERY cost effective to the user? • Is it reliable?

20

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Breaking Down the Barriers

21

• Does it enable significant new capabilities?

• Is it easy to use? • Is it VERY cost effective to the user? • Is it reliable?

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Applications for eGaN® FETs

–Power Over Ethernet –Wireless power transmission –RF DC-DC “Envelope Tracking” –RF Transmission –Network and Server Power Supplies –Solar Microinverters –LED Lighting –Class D Audio –Notebook Power Supply

22

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

In China Today

23

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Application Success Story

24

Control

4x Frequency

75% Reduction

Faster Transient Response

http://media.digikey.com/Photos/EPC/EPC9005.jpg�

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Another Success Story

25

Magnetron 500 MHz

RF Power – Medical Radiation

eGaN FET PA 1GHz

http://en.wikipedia.org/wiki/File:Graduate_School_Project_(2870679632).jpg�

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Wireless Power

26

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

RF Envelope Tracking

27

Fixed Supply Voltage

Transmitted

Dissipated as Heat Supply Voltage Dissipated as

Heat

Transmitted

Without Envelope Tracking With Envelope Tracking

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Breaking Down the Barriers

28

• Does it enable significant new capabilities?

• Is it easy to use? • Is it VERY cost effective to the user? • Is it reliable?

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

It’s just like a MOSFET

Is it easy to use?

except

The high frequency capability makes circuits using eGaN FETs sensitive to layout

The lower VG(MAX) of 6 V makes it advisable to have VGS regulation in your gate drive circuitry

The ultra-small LGA increases the concentration of heat on the PCB

29

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Breaking Down the Barriers

30

• Does it enable significant new capabilities?

• Is it easy to use? • Is it VERY cost effective to the user? • Is it reliable?

EPC - The Leader in eGaN ® FETs |

Silicon vs eGaN® FET Wafer Costs

Starting Material

Epi Growth

Wafer Fab

Test

Assembly

OVERALL

2010 2015

same same

higher

same

same

lower

lower

same

lower

~same?

lower! higher

31

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Breaking Down the Barriers

32

• Does it enable significant new capabilities?

• Is it easy to use? • Is it VERY cost effective to the user? • Is it reliable?

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

eGaN® FETs are Reliable

33

00.20.40.60.8

11.21.41.61.8

2

0 200 400 600 800 1000

Nor

mal

ized

Rds

on

Stress Hours

EPC2001 RDS(ON) after 100VDS HTRB at 125oC

00.20.40.60.8

11.21.41.61.8

2

0 200 400 600 800 1000

Vth

(V)

Stress Hours

EPC2001 VGS(TH) after 100VDS HTRB at 125oC

0.0E+00

1.0E-04

2.0E-04

3.0E-04

4.0E-04

5.0E-04

0 200 400 600 800 1000

Idss

@40

V (A

)

Stress Hours

EPC2015 Idss after 40V H3TRB at 85oC/85%RH

datasheet spec: 500uA max

0.9

0.95

1

1.05

1.1

0 1000 2000 3000

Nor

mal

ized

Effic

ienc

y

Stress Hours

EPC9001 Efficiency after Op Life Test at 85oC TJ

board a

board b

board c

board d

board e

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

34

47

25

100

250400

1.00

10.00

100.00

1000.00

0 200 400 600 800 1000 1200 1400

Rat

ed R

DS(

ON

)m

Ω

Rated VDSS(MAX)

2009

2011

2012

Beyond 600 Volts

200 mΩ 5x6mm PQFN

400 mΩ 5x6mm PQFN

250 mΩ 5x6mm PQFN

150 mΩ 8x8mm PQFN

90 mΩ 8x8mm PQFN

LGA Package

34

EPC - The Leader in eGaN ® FETs |

Driver On Board

Beyond Discrete Devices

Full-Bridge with Driver and Level Shift

Discrete FET with Driver

35

©2012 Efficient Power Conversion Corporation EPC - The Leader in eGaN ® FETs |

Summary

• eGaN FETs are easy to use but care must be taken due to the higher switching speeds compared with power MOSFETs

• eGaN FETs will replace silicon power MOSFETs in power conversion applications with a low-cost and higher efficiency solution

• Higher voltage devices and the integration of analog plus power will enhance the performance and cost-effectiveness of eGaN FETs

36

EPC - The Leader in eGaN ® FETs |

The end of the road for silicon…..

is the beginning of

the eGaN FET journey!

Slide Number 1��Slide Number 3Slide Number 4SEM of an eGaN® FETFlip-Chip LGA ConstructionSize ComparisonSlide Number 8Slide Number 9Slide Number 10Efficiency vs FrequencyParallel FET Buck ConverterSlide Number 13Slide Number 14Slide Number 15PoE-PSE Full Bridge ConverterPoE-PSE Full Bridge ConverterPoE-PSE Full Bridge ConverterSlide Number 19Breaking Down the BarriersBreaking Down the BarriersApplications for eGaN® FETsIn China TodaySlide Number 24Slide Number 25Slide Number 26Slide Number 27Breaking Down the BarriersSlide Number 29Breaking Down the BarriersSilicon vs eGaN® FET Wafer CostsBreaking Down the BarriersSlide Number 33Slide Number 34Slide Number 35SummarySlide Number 37