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Features:> HighbrightnesssurfacemountLED.> 120°viewingangle.> Smallpackageoutline(LxWxH)of2.0x1.4x1.3mm.> QualifiedaccordingtoJEDECmoisturesensitivityLevel2.> CompatibletoIRreflowsoldering.> Environmentalfriendly;RoHScompliance.
Mini DomiLEDTM
Synonymouswithfunctionandperformance,theMiniDomiLEDTMseriesisperfectlysuitedforavarietyofcross-industrialapplicationsduetoitssmallpackageoutline,durabilityandsuperiorbrightness.
DATA SHEET:
Mini DomiLEDTM
AlInGaP : DNx-PJS
© 2005 DomiLED is a trademark of DOMINANT Opto Technologies.All rights reserved. Product specifications are subject to change without notice.
Applications:> Automotive:interiorapplications,eg:switches,telematics,climatecontrolsystem,dashboard,etc.> Exteriorapplications,eg:signallighting,CenterHighMountedStopLigh(CHMSL)> Signage:fullcolordisplayvideonoticeboard,signage,special effectlighting> Lighting:channellight
DOMINANTOpto TechnologiesInnovating Illumination
TM
06/08/2015V7.0
2
DNR-PJS-VW1-1
DNA-PJS-V2W-1
DNY-PJS-VW1-1
DNY-PJS-V2W-1
Red,620nm
Amber,615nm
Yellow,590nm
Yellow,590nm
120
120
120
120
715.00
900.00
715.00
900.00
AllnGaP : DNx-PJS
Part OrderingNumber
Color ViewingAngle˚
Luminous Intensity @ IF = 20mA IV (mcd)
Optical Characteristics at Tj=25˚C
NOTE1.Allpartnumberabovecomesinaquantityof3000unitsperreel.2.Luminousintensityismeasuredwithanaccuracyof±11%.3.Wavelengthbinningiscarriedforallunitsasperthewavelength-binningtable.Onlyonewavelengthgroupisallowedforeachreel.
Min. Typ. Max.
1057.50
1350.00
1057.50
1350.00
1400.00
1800.00
1400.00
1800.00
Typ. (V)Vf @ If = 20mA
Forwardvoltage,Vfismeasuredwithanaccuracyof±0.1V.
Electrical Characteristics at Tj=25˚C
Max. (V)Vr @ Ir = 10uA
Min. (V)Part Number
DNx-PJS2.2 2.61.8
Min. (V)
12
DOMINANTOpto TechnologiesInnovating Illumination
TM
Unit
Absolute Maximum Ratings
Maximum Value
DCforwardcurrent
Peakpulsecurrent;(tp ≤ 10µs, Duty cycle = 0.005)
Reversevoltage
ESDthreshold(HBM)
LEDjunctiontemperature
Operatingtemperature
Storagetemperature
Powerdissipation(atroomtemperature)
Thermalresistance-Junction/ambient,RthJA-Junction/solderpoint,RthJS(Mounting on FR4 PCB, pad size >= 16 mm2perpad)
50
100
12
2000
125
-40…+100
-40…+100
130
480230
mA
mA
V
V
˚C
˚C
˚C
mW
K/WK/W
06/08/2015V7.0
3
Group
Dominantwavelengthismeasuredwithanaccuracyof±1nm.
Wavelength Grouping at Tj=25˚CWavelength distribution (nm)Color
DNR;Red
DNA;Amber
DNY;Yellow
Full
FullWX
FullWXYZ
620-630
610-621610-615615-621
582-594582-585585-588588-591591-594
AllnGaP : DNx-PJSDOMINANTOpto TechnologiesInnovating Illumination
TM
06/08/2015V7.0
UnitCharacteristics
Value
Temperature coefficient of IF = 20mA; 0 ˚C <= T <= 100 ˚C
Temperature coefficient of VF(typ)IF = 20mA; 0 ˚C <= T <= 100 ˚C
Temperature coefficient of IV(typ)IF = 20mA; 0 ˚C <= T <= 100 ˚C
nm/K
Symbol
dom(typ)TC
TCVmV/K
TCIV %/K
DNR-PJSDNA-PJSDNY-PJS
DNR-PJSDNA-PJSDNY-PJS
DNR-PJSDNA-PJSDNY-PJS
Part Number
dom(typ) 0.050.060.08
-2.2-2.0-1.9
-0.5-0.7-0.9
4
AllnGaP : DNx-PJSDOMINANTOpto TechnologiesInnovating Illumination
TM
06/08/2015V7.0
V1V2W1W2
715.0...900.0900.0...1125.0
1125.0...1400.01400.0...1800.0
Brightness Group Luminous Intensity IV (mcd)
Luminous Intensity Group at Tj=25˚C
Group Wavelength distribution (nm)Forward Voltage (V)
Vf Binning (Optional)
Vf Bin @ 20mA
Forwardvoltage,Vfismeasuredwithanaccuracyof±0.1V.
VA
VB
VC
VD
VE
VF
1.75...1.90
1.90...2.05
2.05...2.20
2.20...2.35
2.35...2.50
2.50...2.65
Relative Intensity Vs Forward Current
Forward Current; mA
Rel
ativ
e In
tens
ity; N
orm
aliz
ed a
t 2m
A
0 2 4 6 8 10
0
1
2
3
4
5
6
Forward Current Vs Forward Voltage
Forward Voltage; V
Forw
ard
Cur
rent
, mA
1.2 1.4 1.6 1.8 2 2.2 2.4
0
5
10
15
20
25
30
Forward Current Vs Ambient Temperature
Ambient Temperature
Forw
ard
Cur
rent
, mA
0 20 40 60 80 100
0
5
10
15
20
25
Relative Intensity Vs Wavelength
Wavelength; nm
500 550 600 650 700 750 800
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
5
AllnGaP : DNx-PJS
0.270°
90°
80°
0
60°
50°
40°
30° 20°
0.6
0.4
1.0
0.8
10° 0°
Rel
ativ
e In
tens
ity
Radiation Pattern
Yellow
Orange
SuperRed
Amber
DOMINANTOpto TechnologiesInnovating Illumination
TM
Relative Luminous Intensity Vs Forward Current
Forward Current, mA
Rel
ativ
e In
tens
ity, N
orm
aliz
ed a
t 20m
A
0 10 20 30 40 50 60
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
Forward Current Vs Forward Voltage
Forward Voltage, V
Forw
ard
Cur
rent
, mA
1.2 1.4 1.6 1.8 2 2.2 2.4
0
5
10
15
20
25
30
35
Maximum Current Vs Temperature
Ambient Temperature
Forw
ard
Cur
rent
, mA
0 20 40 60 80 100
0
10
20
30
40
50
Relative Intensity Vs Wavelength
Wavelength, nm
Rel
ativ
e In
tens
ity
500 600 700 800
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Relative Intensity Vs Forward Current
Forward Current, mA
Rel
ativ
e In
tens
ity; N
orm
aliz
ed a
t 50m
A
0 10 20 30 40 50 60 70 80
0
0.2
0.4
0.6
0.8
1
1.2
Forward Current vs Forward Voltage
Forward Voltage; V
Forw
ard
Cur
rent
; mA
1.7 1.8 1.9 2 2.1 2.2 2.3
0
10
20
30
40
50
60
70
Maximum Current Vs Ambient Temperature
Ambient Temperature
Forw
ard
Cur
rent
, mA
0 10 20 30 40 50 60 70 80 90 100
0
10
20
30
40
50
60
70
80
Relative Intensity Vs Wavelength
Wavelength; nm
500 550 600 650 700 750
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1Yellow
Amber
Red
DOMINANT Semiconductors
30/11/10 Mini DomiLED AlInGaP DNx-PJS - Catalogue-pv2 Page 6 of 9
PRELIMINARY UNDER DEVELOPMENT
Engineering reference data are not verified. The specifications are subject to change without notice.
Relative intensity vs. forward current. Forward current vs. forward voltage.
Radiation pattern. Maximum current vs. temperature.
Relative Intensity vs. WavelengthTBD
0.270°
90°
80°
0
60°
50°
40°
30° 20°
0.6
0.4
1.0
0.8
10° 0°
Intensity vs Current
0.00
0.50
1.00
1.50
2.00
2.50
3.00
0 20 40 60 80 100
If(mA)
Nor
mal
ized
IV@
30m
A
DOMINANT Semiconductors
30/11/10 Mini DomiLED AlInGaP DNx-PJS - Catalogue-pv2 Page 6 of 9
PRELIMINARY UNDER DEVELOPMENT
Engineering reference data are not verified. The specifications are subject to change without notice.
Relative intensity vs. forward current. Forward current vs. forward voltage.
Radiation pattern. Maximum current vs. temperature.
Relative Intensity vs. WavelengthTBD
0.270°
90°
80°
0
60°
50°
40°
30° 20°
0.6
0.4
1.0
0.8
10° 0°
Intensity vs Current
0.00
0.50
1.00
1.50
2.00
2.50
3.00
0 20 40 60 80 100
If(mA)
Nor
mal
ized
IV@
30m
A
06/08/2015V7.0
Allowable Forward Current Vs Duty Ratio ( Ta=25 Deg C, tp≤10uS )
Allo
wab
le F
orw
ard
Cur
rent
( m
A )
Duty Ratio, %
DNx-PJS
≤
10
100
1000
0.1 1 10 100
Allo
wa
ble
Fo
rwa
rd C
urr
en
t (
mA
)
Duty Ratio, %
Allowable Forward Current Vs Duty Ratio ( Ta=25 Deg C, tp 10uS )
Forw
ard
Volta
ge; V
Forward Current; mAForward Current; mA
6
Mini DomiLEDTM • AllnGaP : DNx-PJS Package Outlines
AllnGaP : DNx-PJS
Material
Material
Lead-frame
Package
EncapsulantSolderingLeads
CuAlloyWithAgPlating
HighTemperatureResistantPlastic,PPA
Epoxy
Sn-SnPlating
DOMINANTOpto TechnologiesInnovating Illumination
TM
06/08/2015V7.0
Notes: Primary thermal path is through Cathode lead of LED package
7
AllnGaP : DNx-PJS
Recommended Solder Pad
DOMINANTOpto TechnologiesInnovating Illumination
TM
06/08/2015V7.0
8
Taping and orientation
• Reelscomeinquantityof3000units.• Reeldiameteris180mm.
AllnGaP : DNx-PJSDOMINANTOpto TechnologiesInnovating Illumination
TM
06/08/2015V7.0
9
Packaging Specification
AllnGaP : DNx-PJSDOMINANTOpto TechnologiesInnovating Illumination
TM
06/08/2015V7.0
10
AllnGaP : DNx-PJSDOMINANTOpto TechnologiesInnovating Illumination
TM
06/08/2015V7.0
Packaging Specification
Average 1pc Mini DomiLED 1 completed bag (3000pcs)
0.034 190±10Weight(gram)
CardboardBox
Dimensions (mm) Empty BoxWeight (kg)
SuperSmall
Small
Medium
Large
For Mini DomiLEDTM
Reel / BoxCardboard BoxSize
Weight (gram) 0.007 200 ± 10
DOMINANT TM
Moisturesensitivitylevel
Moistureabsorbentmaterial+Moistureindicator
Thereel,moistureabsorbentmaterialandmoistureindicatoraresealedinsidethemoistureprooffoilbag
Reel
Barcodelabel
Label
(L)LotNo:lotno
(P)PartNo:partno
(C)CustNo:partno
(G)Grouping:group
(Q)Quantity:quantity
(D)D/C:datecode
(S)S/N:serialno
DOMINANT Opto TechnologiesMLTEMP2 260˚CRoHSCompliant
MadeinMalaysia
DOMINANT Opto Technologies DRND-008
Issue No : 1 Page 1 of 3
Product & Process Change Notice (PCN)
PCN No: D140157 Date: 21-Nov -2014
1. Describe present process / product:
All SMD LEDs that are currently shipped in the reel form. Please refer to section 3 for
the details; comparing current packing and label specification versus change proposed.
2. Product type affected:
All SMD LEDs that are currently shipped in the reel form.
3. Describe changes (to be):
Existing barcode printed label (BPL) used is as shown below.
Existing BPL size - 87mm x 45mm. As part of improvement and also in response to customers’ request; BPL format will be
changed to the following.
New BPL size - 110mm x 55mm. Additional information are now included in the label. 2D and 3D barcode data are
implemented now for every data field.
325x225x190
325x225x280
570x440x230
570x440x460
0.38
0.54
1.46
1.92
9reelsMAX
15reelsMAX
60reelsMAX
120reelsMAX
06/08/2015V7.011
Time(sec)0 50 100 150 200
300
250
225
200
175
150
125
100
75
50
25
275
Tem
pera
ture
(˚C
)Classification Reflow Profile (JEDEC J-STD-020C)
Ramp-up3˚C/sec max.
255-260˚C10-30s
60-150s
Ramp-down
6˚C/secmax.
Preheat60-180s
480smax
217˚C
Recommended Pb-free Soldering Profile
AllnGaP : DNx-PJSDOMINANTOpto TechnologiesInnovating Illumination
TM
Revision History
Page
-
3
3
2,3
2
5
5,6,10
Subjects
InitialRelease
AddVfbinning
TypoerroronVfbinning
Addthermalresistance,Addcharacteristic
Addnewpartno:DNY-PJS-V2W-1AddESDthreshold(HBM)
Addgraph:AllowableForwardCurrentVsDutyRatio
Typoerrorongraph:ForwardCurrentVsForwardVoltageAddNotesinPackageOutline
Update Packaging Specification
Date of Modification
03Mar2011
25Apr2011
05May2011
07May2012
10Jul2014
11Nov2014
06Aug2015
AllnGaP : DNx-PJS
12
DOMINANTOpto TechnologiesInnovating Illumination
TM
NOTE
Alltheinformationcontainedinthisdocumentisconsideredtobereliableatthetimeofpublishing.However,DOMINANT
Opto Technologiesdoesnotassumeanyliabilityarisingoutoftheapplicationoruseofanyproductdescribedherein.
DOMINANT Opto Technologiesreservestherighttomakechangestoanyproductsinordertoimprovereliability,function
ordesign.
DOMINANT Opto Technologiesproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystems
withouttheexpresswrittenapprovalfromtheManagingDirectorofDOMINANT Opto Technologies.
06/08/2015V7.0
AllnGaP : DNx-PJS
About Us
DOMINANTOpto TechnologiesInnovating Illumination
TM
DOMINANTOptoTechnologies isadynamicMalaysianCorporationthat isamongtheworld’s leadingSMTLEDManufacturers.Anexcellence–drivenorganization,itoffersacomprehensiveproductrangefordiverseindustriesand applications. Featuring an internationally certifi ed quality assurance acclaim, DOMINANT’s extra bright LEDs areperfectlysuitedforvarious lightingapplications in theautomotive,consumerandcommunicationsaswellasindustrialsectors.Withextensiveindustryexperienceandrelentlesspursuitofinnovation,DOMINANT’sstate-of-artmanufacturing,researchandtestingcapabilitieshavebecomeatrustedandreliablebrandacrosstheglobe.MoreinformationaboutDOMINANTOptoTechnologiescanbefoundontheInternetathttp://www.dominant-semi.com.
Please contact us for more information:
DOMINANTOptoTechnologiesSdn.Bhd.Lot6,BatuBerendam,FTZPhaseIII,75350Melaka,MalaysiaTel:(606)2833566Fax:(606)2830566E-mail:[email protected]
DOMINANTOpto TechnologiesInnovating Illumination
TM