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03/07/2018 V2.01
Features:> High brightness surface mount LED using thin film technology.> 115° viewing angle.> Qualified according to JEDEC moisture sensitivity Level 2.> Compatible to IR reflow soldering.> Environmental friendly; RoHS compliance.> Superior corrosion resistance.> Qualified based on AEC-Q101 Standard.
Extreme Power DomiLEDWith its significant power in terms brightness, viewing angle and variety of application possibilities, Extreme Power DomiLED™ truly is a standout performer! Ideal for automotive interior lighting as well as home, office and industrial applications, it is also a proven performer in electronic signs and signals.
DATA SHEET:
Extreme Power DomiLEDInGaN White : D6W-VZKG
© 2005 DomiLED is a trademark of DOMINANT Opto Technologies.All rights reserved. Product specifications are subject to change without notice.
DOMINANTOpto TechnologiesInnovating Illumination
TM
Applications:> Automotive: interior applications, eg: switches, cluster, climate control, dash boards, mirror lamp, ambient lighting.> Automotive: exterior applications, eg: position lamp, license plate lamp, DRL, backup lamp.
2
Part OrderingNumber
Color ViewingAngle˚
Luminous Flux @ IF = 140mA(lm) Appx. 1.2
Min. Typ. Max.
Optical Characteristics at Tj=25˚C
Typ. (V)Vf @ If = 140mA Appx. 3.1
Electrical Characteristics at Tj=25˚C
Max. (V)Part Number
D6W-VZKG 3.20 3.60
Unit
Absolute Maximum RatingsMaximum Value
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.1)
Reverse voltage
ESD threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
Thermal resistance- Real Thermal Resistance Junction / solder point, Rth JS real (typ = 40)- Electrical Thermal Resistance Junction / solder point, Rth JS el (typ =27)(Mounting on FR4 PCB, pad size >= 16 mm2 per pad)
250
600
Not designed for reverse bias
8
150
-40 … +125
-40 … +125
50
34
mA
mA
V
kV
˚C
˚C
˚C
K/W
K/W
Min. (V)
2.70
03/07/2018 V2.0
D6W-VZKG-QS3-1 White 115 30.6 51.7 67.2
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
3
Optical Characteristics at Tj=25˚C
03/07/2018 V2.0
D6W, Color Grouping Appx. 2.1
InGaN wavelength is very sensitive to drive current. Operating at lower current is not recommended and may yield unpredictable performance current pulsing should be used for dimming purposed.
Color Bin Structure
Bin Ellipse y a b
FM
GM
HM
IM
JM
KM
Θ °
5 Step
5 Step
5 Step
5 Step
5 Step
5 Step
0.3100
0.3180
0.3260
0.3340
0.3420
0.3500
0.2990
0.3140
0.3290
0.3440
0.3590
0.3740
0.0112
0.0112
0.0112
0.0112
0.0112
0.0112
0.0048
0.0048
0.0048
0.0048
0.0048
0.0048
75.5667
75.5667
75.5667
75.5667
75.5667
75.5667
x
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
3
Optical Characteristics at Tj=25˚C
15/03/2017 V1.0
D6W, Color Grouping Appx. 2.1
InGaN wavelength is very sensitive to drive current. Operating at lower current is not recommended and may yield unpredictable performance current pulsing should be used for dimming purposed.
Color Bin Structure
Bin Ellipse y a b
FM
GM
HM
IM
JM
KM
Θ °
5 Step
5 Step
5 Step
5 Step
5 Step
5 Step
0.3100
0.3180
0.3260
0.3340
0.3420
0.3500
0.2990
0.3140
0.3290
0.3440
0.3590
0.3740
0.0112
0.0112
0.0112
0.0112
0.0112
0.0112
0.0048
0.0048
0.0048
0.0048
0.0048
0.0048
75.5667
75.5667
75.5667
75.5667
75.5667
75.5667
x
GM
HM
IM
JM
KM
0.280
0.300
0.320
0.340
0.360
0.380
0.300 0.310 0.320 0.330 0.340 0.350 0.360
FM
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
4 03/07/2018 V2.0
Vf Bining (Optional)
Forward Voltage (V) Appx. 3.1Vf @ If = 140mA
VM6
VM7
VM8
2.70 ... 3.00
3.00 ... 3.30
3.30 ... 3.60
Please consult sales and marketing for special part number to incorporate Vf binning.
Brightness Group Luminous Flux Appx. 1.2
(lm)
Luminous Flux Group
Q2
Q3
R2
R3
S2
S3
30.6 ... 34.8
34.8 ... 39.8
39.8 ... 45.2
45.2 ... 51.7
51.7 ... 59.0
59.0 ... 67.2
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
5 03/07/2018 V2.0
Forward Current Vs Forward VoltageIF = f(VF); Tj = 25°C
Forward Voltage VF (V)Forward Current IF (mA)
Forw
ard
Cur
rent
I F (m
A)
Rel
ativ
e Lu
min
ous
Flux
Фre
l
Relative Luminous Flux Vs Forward CurrentФV/ФV(140mA) = f(IF); Tj = 25°C
Forw
ard
Cur
rent
I F (m
A)
Temperature T(°C)
Maximum Current Vs TemperatureIF=f(T)
Forward Current IF (mA
Chromaticity Coordinate Shift Vs Forward Current∆Cx, ∆Cy = f(IF);Tj = 25°C
Relative Spectral EmissionФrel = f(λ); Tj = 25°C; IF = 140mAR
elat
ive
Lum
inou
s Fl
ux Ф
rel
Wavelength λ (nm)
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Duty Ratio, %
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
∆Cx,
∆C
y
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 50 100 150 200 25050
70
90
110
130
150
170
190
210
230
250
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
Rel
ativ
e Lu
min
ous
Flux
Фre
l
Forw
ard
Cur
rent
I FForward Current IF (mA)
Relative Lumionous Flux Vs Forward CurrentФV/ФV(140mA) = f(IF); Tj = 25°C
Forward Current Vs Forward VoltageIF = f(VF); Tj = 25°C
Forward Voltage VF (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Rel
ativ
e Lu
min
ous
Inte
nsity
Фre
lRelative Spectral Emission
Фrel = f(λ); Tj = 25°C; IF = 140mA
Wavelength λ (nm)
Forw
ard
Cur
rent
I F(m
A)
Maximum Current Vs TemperatureIF = f (T)
Temperature T(°C)
TS
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120 140
TS = Solder Point Temperature
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 50 100 150 200 25050
70
90
110
130
150
170
190
210
230
250
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
Rel
ativ
e Lu
min
ous
Flux
Фre
l
Forw
ard
Cur
rent
I F
Forward Current IF (mA)
Relative Lumionous Flux Vs Forward CurrentФV/ФV(140mA) = f(IF); Tj = 25°C
Forward Current Vs Forward VoltageIF = f(VF); Tj = 25°C
Forward Voltage VF (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Rel
ativ
e Lu
min
ous
Inte
nsity
Фre
l
Relative Spectral EmissionФrel = f(λ); Tj = 25°C; IF = 140mA
Wavelength λ (nm)
Forw
ard
Cur
rent
I F(m
A)
Maximum Current Vs TemperatureIF = f (T)
Temperature T(°C)
TS
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120 140
TS = Solder Point Temperature
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 50 100 150 200 25050
70
90
110
130
150
170
190
210
230
250
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
Rel
ativ
e Lu
min
ous
Flux
Фre
l
Forw
ard
Cur
rent
I FForward Current IF (mA)
Relative Lumionous Flux Vs Forward CurrentФV/ФV(140mA) = f(IF); Tj = 25°C
Forward Current Vs Forward VoltageIF = f(VF); Tj = 25°C
Forward Voltage VF (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Rel
ativ
e Lu
min
ous
Inte
nsity
Фre
l
Relative Spectral EmissionФrel = f(λ); Tj = 25°C; IF = 140mA
Wavelength λ (nm)
Forw
ard
Cur
rent
I F(m
A)
Maximum Current Vs TemperatureIF = f (T)
Temperature T(°C)
TS
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120 140
TS = Solder Point Temperature
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 50 100 150 200 25050
70
90
110
130
150
170
190
210
230
250
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
Rel
ativ
e Lu
min
ous
Flux
Фre
l
Forw
ard
Cur
rent
I F
Forward Current IF (mA)
Relative Lumionous Flux Vs Forward CurrentФV/ФV(140mA) = f(IF); Tj = 25°C
Forward Current Vs Forward VoltageIF = f(VF); Tj = 25°C
Forward Voltage VF (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Rel
ativ
e Lu
min
ous
Inte
nsity
Фre
l
Relative Spectral EmissionФrel = f(λ); Tj = 25°C; IF = 140mA
Wavelength λ (nm)
Forw
ard
Cur
rent
I F(m
A)
Maximum Current Vs TemperatureIF = f (T)
Temperature T(°C)
TS
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120 140
TS = Solder Point Temperature
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 50 100 150 200 25050
70
90
110
130
150
170
190
210
230
250
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
Rel
ativ
e Lu
min
ous
Flux
Фre
l
Forw
ard
Cur
rent
I F
Forward Current IF (mA)
Relative Lumionous Flux Vs Forward CurrentФV/ФV(140mA) = f(IF); Tj = 25°C
Forward Current Vs Forward VoltageIF = f(VF); Tj = 25°C
Forward Voltage VF (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Rel
ativ
e Lu
min
ous
Inte
nsity
Фre
l
Relative Spectral EmissionФrel = f(λ); Tj = 25°C; IF = 140mA
Wavelength λ (nm)
Forw
ard
Cur
rent
I F(m
A)
Maximum Current Vs TemperatureIF = f (T)
Temperature T(°C)
TS
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120 140
TS = Solder Point Temperature
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
∆Cx
∆Cy
-0.03
-0.02
-0.01
0.00
0.01
0.02
0.03
0 50 100 150 200 250
Rel
ativ
e W
avel
engt
h λ r
el(n
m)
Relative Wavelength Shift Vs Forward Currentλdom = f(IF); Tj = 25°C
Forward Current IF (mA)
∆Cx,
∆C
y
Chromaticity Coordinate Shift Vs Forward Current∆Cx, ∆Cy = f(IF);Tj = 25°C
Forward Current IF (mA)
Redundant
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
6 03/07/2018 V2.0
Radiation Pattern
Junction Temperature Tj(°C)
Rel
ativ
e Fo
rwar
d Vo
ltage
∆V F (
V)
Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF =140mA
Junction Temperature Tj(°C)
Rel
ativ
e Lu
min
ious
Flu
x Ф
rel
Relative Luminious Flux Vs Junction TemperatureФV/ФV(25°C) = f(Tj); IF = 140mA
Junction Temperature Tj(°C)
∆Cx
, ∆C
yChromaticity Coordinate Shift Vs Junction Temperature
∆Cx, ∆Cy = f(Tj); IF = 140mA
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
-50 -30 -10 10 30 50 70 90 110 130 1500.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -30 -10 10 30 50 70 90 110 130 150
Rel
ativ
e Fo
rwar
d Vo
ltage
∆V F
(V)
Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF = 140mA
Junction Temperature Tj(°C)
Rel
ativ
e Lu
min
ious
Flu
x Ф
rel
Relative Luminious Flux Vs Junction TemperatureФV/ФV(25°C) = f(Tj); IF = 140mA
Junction Temperature Tj(°C)
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
-50 -30 -10 10 30 50 70 90 110 130 1500.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -30 -10 10 30 50 70 90 110 130 150
Rel
ativ
e Fo
rwar
d Vo
ltage
∆V F
(V)
Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF = 140mA
Junction Temperature Tj(°C)
Rel
ativ
e Lu
min
ious
Flu
x Ф
rel
Relative Luminious Flux Vs Junction TemperatureФV/ФV(25°C) = f(Tj); IF = 140mA
Junction Temperature Tj(°C)
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
-50 -30 -10 10 30 50 70 90 110 130 150
∆Cx
∆Cy
-0.05
-0.04
-0.03
-0.02
-0.01
0.00
0.01
0.02
0.03
0.04
0.05
-50 -30 -10 10 30 50 70 90 110 130 150
Rel
ativ
e W
avel
engt
h ∆λ
dom
(nm
)
Relative Wavelength Vs Junction Temperature∆λdom = λdom - λdom (25°C) = f(Tj); IF = 140mA
∆Cx,
∆C
yChromaticity Coordinate Shift Vs Junction Temperature
∆Cx, ∆Cy = f(Tj); IF = 140mA
Junction Temperature Tj(°C) Junction Temperature Tj(°C)
Redundant
From: Joey Lim [mailto:[email protected]] Sent: Monday, July 13, 2015 4:37 PM To: 'Ng WL' Cc: 'Lim CS' Subject: Radiation pattern Hi Wei Leng,
Pls update the radiation pattern for D6x-SKG with the attached.
Thanks.
Best Regards,
Joey Lim ext 2090
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
7
Extreme Power DomiLED • InGaN White : D6W-VZKG Package Outlines
Material
Material
Lead-frame
Package
Encapsulant Soldering Leads
Cu Alloy With Au Plating
High Temperature Resistant Plastic, PPA
Silicone
Au Plating
03/07/2018 V2.0
Note : Primary thermal path is through Cathode lead of LED package General tolerance ± 0.1
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
8
Recommended Solder Pad
03/07/2018 V2.0
DOMINANT Opto Technologies
29/12/14 Extreme PowerDomi AlInGaP D6A-SKG -pv2.docx Page 5 of 9
PRELIMINARY UNDER DEVELOPMENT
Engineering reference data are not verified. The specifications are subject to change without notice.
Solder Pad Design.
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
9
Taping and orientation
• Reels come in quantity of 1000 units.• Reel diameter is 180 mm.
03/07/2018 V2.0
DOMINANT Opto Technologies
29/12/14 Extreme PowerDomi AlInGaP D6A-SKG -pv2.docx Page 7 of 9
PRELIMINARY UNDER DEVELOPMENT
Engineering reference data are not verified. The specifications are subject to change without notice.
Taping And Orientation. Reels come in quantity of 1000 units.
Reel diameters are 180 mm.
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
10
Packaging Specification
03/07/2018 V2.0
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
08/03/2013 V5.09
Packaging Specification
InGaN : DDx-DRxDOMINANTOpto TechnologiesInnovating Illumination
TM
11 03/07/2018 V2.0
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
Packaging SpecificationMoisture sensitivity level
Moisture absorbent material +Moisture indicator
The reel, moisture absorbent material and moisture indicator aresealed inside the moisture proof foil bag
Reel
Barcode label
Label
(L) Lot No : lotno
(P) Part No : partno
(C) Cust No : partno
(G) Grouping : group
(Q) Quantity : quantity
(D) D/C : date code
(S) S/N : serial no
DOMINANT Opto TechnologiesML TEMP2 260˚CRoHS Compliant
Made in Malaysia
Dimensions (mm)
190 ± 10Weight (gram)Packing Box 210 x 210 x 20
CardboardBoxDOMINANT
TM
Barcode Label
Barcode Label
Packing Sealing Label
Average 1pc Extreme Power DomiLED 1 completed bag (1000pcs)
0.034 190 ± 10Weight (gram)Weight (gram) 0.036 240 ± 10
Dimensions (mm) Empty BoxWeight (kg)
Super Small
Small
Medium
Large
For Extreme Power DomiLED
Reel / BoxCardboard BoxSize
325 x 225 x 190
325 x 225 x 280
570 x 440 x 230
570 x 440 x 460
0.38
0.54
1.46
1.92
7 reels MAX
11 reels MAX
48 reels MAX
96 reels MAX
12
Time (sec)0 50 100 150 200
300
250
225
200
175
150
125
100
75
50
25
275
Tem
pera
ture
(˚C
)Classification Reflow Profile (JEDEC J-STD-020C)
Ramp-up3˚C/sec max.
255-260˚C10-30s
60-150s
Ramp-down
6˚C/secmax.
Preheat 60-180s
480s max
217˚C
Recommended Pb-free Soldering Profile
03/07/2018 V2.0
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
13 03/07/2018 V2.0
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
Appendix
1) Brightness:
1.1 Luminous intensity is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 8 % and an expanded
uncertainty of ± 11 % (according to GUM with a coverage factor of k=3).
1.2 Luminous flux is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 8 % and an expanded
uncertainty of ± 11 % (according to GUM with a coverage factor of k=3).
1.3 Radiant intensity is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 8 % and an expanded
uncertainty of ± 11 % (according to GUM with a coverage factor of k=3).
1.4 Radiant flux is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 8 % and an expanded uncertainty
of ± 11 % (according to GUM with a coverage factor of k=3).
2) Color:
2.1 Chromaticity coordinate groups are measured at current pulse 25 ms(typ) with an internal reproducibility of ± 0.005 and
an expanded uncertainty of ± 0.01 (accordingly to GUM with a coverage factor of k=3).
2.2 Dominant wavelength is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 0.5nm and an
expanded uncertainty of ± 1nm (accordingly to GUM with a coverage factor of k=3).
3) Voltage:
3.1 Forward Voltage, Vf is measured when a current pulse of 8 ms(typ) with an internal reproducibility of ± 0.05V and an
expanded uncertainty of ± 0.1V (accordingly to GUM with a coverage factor of k=3).
4) Typical Values:
4.1 At special conditions of LED manufacturing processes, typical data or calculated correlations of technical parameters
only reflect the statistical figures. But not necessarily correspond to the actual parameters of each single product, which
could differ from the typical data or calculated correlations or the typical characteristic line. These typical data may
change whenever technical improvements happen.
5) Tolerance of Measure
5.1 Unless otherwise noted in drawing, tolerances are specified with ± 0.1 and dimension are specifiec in mm.
Revision History
NOTE
All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT
Opto Technologies does not assume any liability arising out of the application or use of any product described herein.
DOMINANT Opto Technologies reserves the right to make changes to any products in order to improve reliability, function
or design.
DOMINANT Opto Technologies products are not authorized for use as critical components in life support devices or systems
without the express written approval from the Managing Director of DOMINANT Opto Technologies.
Page
-
10, 11, 13
Date of Modification
15 Mar 2017
03 Jul 2018
14 03/07/2018 V2.0
Subjects
Initial Release
Typo Error on ReelUpdated Package Specification
Updated Appendix
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM
About Us
DOMINANT Opto Technologies is a dynamic Malaysian Corporation that is among the world’s leading SMT LED Manufacturers. An excellence – driven organization, it offers a comprehensive product range for diverse industries and applications. Featuring an internationally certified quality assurance acclaim, DOMINANT’s extra bright LEDs are perfectly suited for various lighting applications in the automotive, consumer and communications as well as in-dustrial sectors. With extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art manufacturing, research and testing capabilities have become a trusted and reliable brand across the globe. More information about DOMINANT Opto Technologies can be found on the Internet at http://www.dominant-semi.com.
Please contact us for more information:
DOMINANT Opto Technologies Sdn. BhdLot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia.Tel: +606 283 3566 Fax: +606 283 0566E-mail: [email protected]
InGaN White : D6W-VZKGDOMINANTOpto TechnologiesInnovating Illumination
TM