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25/08/2016 V9.01
Features:> High brightness surface mount LED.> 120° viewing angle.> Small package outline (LxWxH) of 3.2 x 2.8 x 1.8mm.> Qualified according to JEDEC moisture sensitivity Level 2.> Compatible to IR reflow soldering.> Environmental friendly; RoHS compliance.
Power DomiLEDTM
With its significant power in terms brightness, viewing angle and variety of application possibilities, Power DomiLED™ truly is a standout performer! Ideal for automotive interior lighting as well as home, office and industrial applications, it is also a proven performer in electronic signs and signals.
DATA SHEET:
Power DomiLEDTM
InGaN White : DWW-LJG
© 2005 DomiLED is a trademark of DOMINANT Opto Technologies.All rights reserved. Product specifications are subject to change without notice.
Applications:> Automotive: interior applications, eg: switches, telematics, climate control system, dashboard, etc. exterior applications, eg: signal lighting, Center High Mounted Stop Light (CHMSL), > Display: full color display video notice board.> Industry: white goods (eg: Oven, microwave, etc.).> Lighting: architecture lighting, general lighting, garden light, etc
DOMINANTOpto TechnologiesInnovating Illumination
TM
InGaN White : DWW-LJG
25/08/2016 V9.02
Part OrderingNumber
Color ViewingAngle˚
Luminous Intensity @ IF = 30mA IV(mcd) Appx. 1.1Total Flux @ 30mA mlm (typ)
DWW-LJG-W2X-1DWW-LJG-XY1-1
White White
120120
1400.01800.0
70008900
Typ. (V)Vf @ If = 30mA Appx. 3.1
Electrical Characteristics at Tj=25˚C
Max. (V)Vr @ Ir = 10uA
Min. (V)Part Number
DWW-LJG
3.20 53.50
Min. (V)
2.90
Unit
Absolute Maximum RatingsMaximum Value
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage; Ir (max) = 10µA
ESD threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
Thermal resistance- Junction / ambient, Rth JA- Junction / solder point, Rth JS(Mounting on FR4 PCB, pad size >= 16 mm2 per pad)
50
300
5
2000
125
-40 … +110
-40 … +110
200
300130
mA
mA
V
V
˚C
˚C
˚C
mW
K/WK/W
Optical Characteristics (Tj=25˚C)
Min. Typ. Max.
2240.02850.0
2850.03550.0
DOMINANTOpto TechnologiesInnovating Illumination
TM
Not for new design
InGaN White : DWW-LJG
3 25/08/2016 V9.0
DOMINANTOpto TechnologiesInnovating Illumination
TM
DWW, White Color Grouping Appx. 2.1
0.200
0.210
0.220
0.230
0.240
0.250
0.260
0.270
0.280
0.290
0.300
0.310
0.320
0.330
0.340
0.350
0.360
0.370
0.380
0.390
0.250 0.260 0.270 0.280 0.290 0.300 0.310 0.320 0.330 0.340 0.350 0.360 0.370
JL
JK
KL
KK
LL
LK
NK
NL
OL
ML
PL
PK
OK
MK
FLFK
GL
GK
HL
HK
IL
IK
Bin0.26600.23200.25800.23900.27310.24220.26550.25000.27990.25200.27290.26110.28550.26000.27900.27010.29100.26800.28500.27900.30040.28300.29600.2956
CxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCy
0.27300.22700.26550.25000.27930.23570.27310.24220.28550.26000.27900.27010.29080.25180.28500.27900.29600.25900.29100.26800.30440.27180.30040.2830
0.27930.23570.27310.24220.28560.24450.27990.25200.29080.25180.28550.26000.29600.25900.29100.26800.30440.27180.30040.28300.31280.28480.31000.2982
0.27310.24220.26600.23200.27990.25200.27290.26110.28560.24450.27990.25200.29100.26800.28550.26000.30040.28300.29600.29560.31000.29820.30700.3122
Color Bin Structure
1 2 3 4
FK
FL
GK
GL
HK
HL
IK
IL
JK
JL
KK
KL
Bin0.31000.29820.30700.31220.31970.31370.31890.33030.32880.32820.32880.34530.33860.34270.33860.35920.34840.35710.34840.3730
CxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCy
0.31280.28480.31000.29820.32050.29640.31970.31370.32880.30920.32880.32820.33860.32420.33860.34270.34840.33920.34840.3571
0.32050.29640.31970.31370.32880.30920.32880.32820.33860.32420.33860.34270.34840.33920.34840.35710.35820.35420.35820.3716
0.31970.31370.31890.33030.32880.32820.32880.34530.33860.34270.33860.35920.34840.35710.34840.37300.35820.37160.35820.3792
1 2 3 4
LK
LL
MK
ML
NK
NL
OK
OL
PK
PL
InGaN wavelength is very sensitive to drive current. Operating at lower current is not recommended and may yield unpredictable performance. Current pulsing should be used for dimming purposes.
InGaN White : DWW-LJG
4 25/08/2016 V9.0
DOMINANTOpto TechnologiesInnovating Illumination
TM
InGaN White : DWW-LJG
5 25/08/2016 V9.0
W2X1X2Y1
1400.0 ... 1800.01800.0 ... 2240.02240.0 ... 2850.02850.0 ... 3550.0
Brightness Group Luminous Intensity Appx. 1.1
IV (mcd)
Luminous Intensity Group at Tj=25˚C
DOMINANTOpto TechnologiesInnovating Illumination
TM
Group Wavelength distribution (nm)Forward Voltage (V) Appx. 3.1
Vf Binning (Optional)
Vf Bin
V1
V2
V3
V4
V5
V6
2.90 ... 3.00
3.00 ... 3.10
3.10 ... 3.20
3.20 ... 3.30
3.30 ... 3.40
3.40 ... 3.50
Please consult sales and marketing for special part number to incorporate Vf binning.
25/08/2016 V9.06
InGaN White : DWW-LJGDOMINANTOpto TechnologiesInnovating Illumination
TM
Forward Current Vs Forward VoltageIF = f(VF); Tj = 25°C
Forward Voltage VF (V)Forward Current IF (mA)
Forw
ard
Cur
rent
I F (m
A)
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Relative Luminous Intensity Vs Forward CurrentIV/IV(30mA) = f(IF); Tj = 25°C
Forw
ard
Cur
rent
I F (m
A)
Temperature T(°C)
Maximum Current Vs TemperatureIF=f(T)
Forward Current IF (mA)
Chromaticity Coordinate Shift Vs Forward Current∆Cx, ∆Cy = f(IF);Tj = 25°C
Relative Spectral EmissionIrel = f(λ); Tj = 25°C; IF = 30mA
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Wavelength λ (nm)
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Duty Ratio, %
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
∆Cx,
∆C
y
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 5 10 15 20 25 30 35 40 45 500
5
10
15
20
25
30
35
40
45
50
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
Forw
ard
Cur
rent
I F(m
A)
Forward Current IF (mA)
Forward Current Vs Forward VoltageIF = f(VF); Tj = 25°C
Forward Voltage VF (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Wavelength (nm)
Forw
ard
Cur
rent
I F(m
A)
Maximum Current Vs TemperatureIF = f (T)
Temperature T(°C)
Ta
0
10
20
30
40
50
60
70
0 10 20 30 40 50 60 70 80 90 100 110 120
Ts
Ta= Ambient TemperatureTs= Solder Point Temperature
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
Relative Luminous Intensity Vs Forward CurrentIV/IV(30mA) = f(IF); Tj = 25°C
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Relative Spectral EmissionIrel = f(λ); Tj = 25°C; IF = 5mA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 5 10 15 20 25 30 35 40 45 500
5
10
15
20
25
30
35
40
45
50
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6Fo
rwar
d C
urre
nt I F
(mA
)Forward Current IF (mA)
Forward Current Vs Forward VoltageIF = f(VF); Tj = 25°C
Forward Voltage VF (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Wavelength (nm)
Forw
ard
Cur
rent
I F(m
A)
Maximum Current Vs TemperatureIF = f (T)
Temperature T(°C)
Ta
0
10
20
30
40
50
60
70
0 10 20 30 40 50 60 70 80 90 100 110 120
Ts
Ta= Ambient TemperatureTs= Solder Point Temperature
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
Relative Luminous Intensity Vs Forward CurrentIV/IV(30mA) = f(IF); Tj = 25°C
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Relative Spectral EmissionIrel = f(λ); Tj = 25°C; IF = 5mA
23/01/2014 V5.05
InGaN White : DWW-LJG
0.270°
90°
80°
0
60°
50°
40°
30° 20°
0.6
0.4
1.0
0.8
10° 0°
Radiation Pattern
Relative Intensity Vs Forward Current
Forward Current, mA
Rel
ativ
e In
ten
sity
; N
orm
aliz
ed a
t 30
mA
0 10 20 30 40 50 60 70 80 90 100
0
0.5
1
1.5
2
2.5
Forward Current Vs Forward Voltage
Forward Voltage, V
Fo
rwar
d C
urr
ent,
mA
2.5 3 3.5 4 4.5
0
10
20
30
40
50
60
Forward Current Vs Ambient Temperature
Ambient Temperature
Fo
rwar
d C
urr
ent;
mA
0 10 20 30 40 50 60 70 80 90 100 110 120
0
10
20
30
40
50
60
Relative Intensity Vs Wavelength
Wavelength, nm
Rel
ativ
e In
ten
sity
300 500 700 900 1100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
DOMINANTOpto TechnologiesInnovating Illumination
TM
Wavelength, nm
Rel
ativ
e In
ten
sity
400 450 500 550 600 650 700 750 800
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 5 10 15 20 25 30 35 40 45 500
5
10
15
20
25
30
35
40
45
50
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
Forw
ard
Cur
rent
I F(m
A)
Forward Current IF (mA)
Forward Current Vs Forward VoltageIF = f(VF); Tj = 25°C
Forward Voltage VF (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Wavelength (nm)
Forw
ard
Cur
rent
I F(m
A)
Maximum Current Vs TemperatureIF = f (T)
Temperature T(°C)
Ta
0
10
20
30
40
50
60
70
0 10 20 30 40 50 60 70 80 90 100 110 120
Ts
Ta= Ambient TemperatureTs= Solder Point Temperature
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
Relative Luminous Intensity Vs Forward CurrentIV/IV(30mA) = f(IF); Tj = 25°C
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Relative Spectral EmissionIrel = f(λ); Tj = 25°C; IF = 5mA
∆Cx
∆Cy
-0.030
-0.025
-0.020
-0.015
-0.010
-0.005
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0 5 10 15 20 25 30 35 40 45 50-0.80
-0.60
-0.40
-0.20
0.00
0.20
0.40
0.60
0.80
0 10 20 30 40 50 60 70 80
Rel
ativ
e W
avel
engt
h re
l(nm
)
Relative Wavelength Shift Vs Forward Currentλdom = f(IF); Tj = 25°C
Forward Current IF (mA)
Cx,
C
y
Chromaticity Coordinate Shift Vs Forward Current∆Cx, ∆Cy = f(IF);Tj = 25°C
Forward Current IF (mA)
1.0
1.2
1.4
1.6
0.0
0.2
0.4
0.6
0.8
0 5 10 15 20 25 30 35 40 45 50
25/08/2016 V9.07
InGaN White : DWW-LJGDOMINANTOpto TechnologiesInnovating Illumination
TM
Radiation Pattern
Junction Temperature Tj(°C)
Rel
ativ
e Fo
rwar
d Vo
ltage
∆V F (
V)
Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF =30mA
Junction Temperature Tj(°C)
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Relative Luminous Intensity Vs Junction TemperatureIV/IV(25°C) = f(Tj); IF = 30mA
Junction Temperature Tj(°C)
∆Cx
, ∆C
yChromaticity Coordinate Shift Vs Junction Temperature
∆Cx, ∆Cy = f(Tj); IF = 30mA 23/01/2014 V5.05
InGaN White : DWW-LJG
0.270°
90°
80°
0
60°
50°
40°
30° 20°
0.6
0.4
1.0
0.8
10° 0°
Radiation Pattern
Relative Intensity Vs Forward Current
Forward Current, mA
Rel
ativ
e In
tens
ity; N
orm
aliz
ed a
t 30m
A
0 10 20 30 40 50 60 70 80 90 100
0
0.5
1
1.5
2
2.5
Forward Current Vs Forward Voltage
Forward Voltage, V
Forw
ard
Cur
rent
, mA
2.5 3 3.5 4 4.5
0
10
20
30
40
50
60
Forward Current Vs Ambient Temperature
Ambient Temperature
Forw
ard
Cur
rent
; mA
0 10 20 30 40 50 60 70 80 90 100 110 120
0
10
20
30
40
50
60
Relative Intensity Vs Wavelength
Wavelength, nm
Rel
ativ
e In
tens
ity
300 500 700 900 1100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
DOMINANTOpto TechnologiesInnovating Illumination
TM
Wavelength, nm
Rel
ativ
e In
tens
ity
400 450 500 550 600 650 700 750 800
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
-50 -30 -10 10 30 50 70 90 110 1300.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -30 -10 10 30 50 70 90 110 130
Rel
ativ
e Fo
rwar
d Vo
ltage
V
F(V
)
Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF = 30mA
Junction Temperature Tj(°C) Junction Temperature Tj(°C)
Relative Luminous Intensity Vs Junction TemperatureIV /IV (25°C) = f(Tj); IV = 30mA
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
-50 -30 -10 10 30 50 70 90 110 1300.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -30 -10 10 30 50 70 90 110 130
Rel
ativ
e Fo
rwar
d Vo
ltage
V
F(V
)
Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF = 30mA
Junction Temperature Tj(°C) Junction Temperature Tj(°C)
Relative Luminous Intensity Vs Junction TemperatureIV /IV (25°C) = f(Tj); IV = 30mA
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
-50 -30 -10 10 30 50 70 90 110 130
∆Cx
∆Cy
-0.030
-0.025
-0.020
-0.015
-0.010
-0.005
0.000
0.005
0.010
0.015
0.020
0.025
0.030
-50 -30 -10 10 30 50 70 90 110 130
Rel
ativ
e W
avel
engt
h do
m(n
m)
Relative Wavelength Vs Junction Temperature∆λdom = λdom - λdom (25°C) = f(Tj); IF = 20mA
Cx,
C
yChromaticity Coordinate Shift Vs Junction Temperature
∆Cx, ∆Cy = f(Tj); IF = 30mA
Junction Temperature Tj(°C) Junction Temperature Tj(°C)
InGaN White : DWW-LJG
25/08/2016 V9.08
Power DomiLEDTM • InGaN White : DWW-LJG Package Outlines
Material
Material
Lead-frame
Package
Encapsulant Soldering Leads
Cu Alloy With Ag Plating
High Temperature Resistant Plastic, PPA
Silicone Resin
Sn-Sn Plating
DOMINANTOpto TechnologiesInnovating Illumination
TM
Note : Primary thermal path is through Anode lead of LED package.
25/08/2016 V9.09
InGaN White : DWW-LJG
Recommended Solder Pad
DOMINANTOpto TechnologiesInnovating Illumination
TM
23/01/2014 V5.07
InGaN White : DWW-LJG
Recommended Solder Pad
DOMINANTOpto TechnologiesInnovating Illumination
TM
25/08/2016 V9.010
Taping and orientation
• Reels come in quantity of 2000 units.• Reel diameter is 180 mm.
InGaN White : DWW-LJGDOMINANTOpto TechnologiesInnovating Illumination
TM
23/01/2014 V5.08
Taping and orientation
• Reels come in quantity of 2000 units.• Reel diameter is 180 mm.
InGaN White : DWW-LJGDOMINANTOpto TechnologiesInnovating Illumination
TM
23/01/2014 V5.08
Taping and orientation
• Reels come in quantity of 2000 units.• Reel diameter is 180 mm.
InGaN White : DWW-LJGDOMINANTOpto TechnologiesInnovating Illumination
TM
25/08/2016 V9.011
Packaging Specification
InGaN White : DWW-LJGDOMINANTOpto TechnologiesInnovating Illumination
TM
23/01/2014 V5.09
Packaging Specification
InGaN White : DWW-LJGDOMINANTOpto TechnologiesInnovating Illumination
TM
25/08/2016 V9.012
InGaN White : DWW-LJGDOMINANTOpto TechnologiesInnovating Illumination
TM
Packaging Specification
Average 1pc Power DomiLED 1 completed bag (2000pcs)
0.034 190 ± 10Weight (gram)
CardboardBox
Dimensions (mm) Empty BoxWeight (kg)
Super Small
Small
Medium
Large
For Power DomiLEDTM
Reel / BoxCardboard BoxSize
Weight (gram) 0.034 240 ± 10
DOMINANT TM
Moisture sensitivity level
Moisture absorbent material +Moisture indicator
The reel, moisture absorbent material and moisture indicator aresealed inside the moisture proof foil bag
Reel
Barcode label
Label
(L) Lot No : lotno
(P) Part No : partno
(C) Cust No : partno
(G) Grouping : group
(Q) Quantity : quantity
(D) D/C : date code
(S) S/N : serial no
DOMINANT Opto TechnologiesML TEMP2 260˚CRoHS Compliant
Made in Malaysia
DOMINANT Opto Technologies DRND-008
Issue No : 1 Page 1 of 3
Product & Process Change Notice (PCN)
PCN No: D140157 Date: 21-Nov -2014
1. Describe present process / product:
All SMD LEDs that are currently shipped in the reel form. Please refer to section 3 for
the details; comparing current packing and label specification versus change proposed.
2. Product type affected:
All SMD LEDs that are currently shipped in the reel form.
3. Describe changes (to be):
Existing barcode printed label (BPL) used is as shown below.
Existing BPL size - 87mm x 45mm. As part of improvement and also in response to customers’ request; BPL format will be
changed to the following.
New BPL size - 110mm x 55mm. Additional information are now included in the label. 2D and 3D barcode data are
implemented now for every data field.
325 x 225 x 190
325 x 225 x 280
570 x 440 x 230
570 x 440 x 460
0.38
0.54
1.46
1.92
9 reels MAX
15 reels MAX
60 reels MAX
120 reels MAX
25/08/2016 V9.013
Time (sec)0 50 100 150 200
300
250
225
200
175
150
125
100
75
50
25
275
Tem
pera
ture
(˚C
)
Classification Reflow Profile (JEDEC J-STD-020C)
Ramp-up3˚C/sec max.
255-260˚C10-30s
60-150s
Ramp-down
6˚C/secmax.
Preheat 60-180s
480s max
217˚C
Recommended Pb-free Soldering Profile
InGaN White : DWW-LJGDOMINANTOpto TechnologiesInnovating Illumination
TM
25/08/2016 V9.014
InGaN White : DWW-LJGDOMINANTOpto TechnologiesInnovating Illumination
TM
Appendix
1) Brightness:1.1 Luminous intensity is measured with an internal reproducibility of ± 8 % and an expanded uncertainty of ± 11 % (according to GUM with a coverage factor of k=3).1.2 Luminous flux is measured with an internal reproducibility of ± 8 % and an expanded uncertainty of ± 11 % (according to GUM with a coverage factor of k=3).
2) Color:2.1 Chromaticity coordinate groups are measured with an internal reproducibility of ± 0.005 and an expanded uncertainty of ± 0.01 (accordingly to GUM with a coverage factor of k=3).2.2 DOMINANT wavelength is measured with an internal reproducibility of ± 0.5nm and an expanded uncertainty of ± 1nm (accordingly to GUM with a coverage factor of k=3).
3) Voltage:3.1 Forward Voltage, Vf is measured with an internal reproducibility of ± 0.05V and an expanded uncertainty of ± 0.1V (accordingly to GUM with a coverage factor of k=3).
Revision History
NOTE
All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT
Opto Technologies does not assume any liability arising out of the application or use of any product described herein.
DOMINANT Opto Technologies reserves the right to make changes to any products in order to improve reliability, function
or design.
DOMINANT Opto Technologies products are not authorized for use as critical components in life support devices or sys-
tems without the express written approval from the Managing Director of DOMINANT Opto Technologies.
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Subjects
Initial Release
Update Thermal Resistance
Update Operating Temperature and Storage Temperature
Add new partno: DWW-LJG-XY1-1
Typo error on Vf
Not for new design: DWW-LJG-W2X-1
Add Graph: Chromaticity Coordinate Shift
Update Color Bin StructureUpdate Notes in Package Outline
Update Package Specification
Update Product PhotoUpdate Vf
Add Vf Binning (Optional)Update GraphAdd Appendix
Date of Modification
05 Apr 2012
13 Mar 2013
19 Aug 2013
05 Sep 2013
23 Jan 2014
20 Jun 2014
01 Oct 2014
02 Jun 2016
25 Aug 2016
InGaN White : DWW-LJG
25/08/2016 V9.0
DOMINANTOpto TechnologiesInnovating Illumination
TM
15
InGaN White : DWW-LJG
About Us
DOMINANT Opto Technologies is a dynamic Malaysian Corporation that is among the world’s leading SMT LED Manufacturers. An excellence – driven organization, it offers a comprehensive product range for diverse industries and applications. Featuring an internationally certifi ed quality assurance acclaim, DOMINANT’s extra bright LEDs are perfectly suited for various lighting applications in the automotive, consumer and communications as well as in-dustrial sectors. With extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art manufacturing, research and testing capabilities have become a trusted and reliable brand across the globe. More information about DOMINANT Opto Technologies can be found on the Internet at http://www.dominant-semi.com.
DOMINANTOpto TechnologiesInnovating Illumination
TM
DOMINANTOpto TechnologiesInnovating Illumination
TM
Please contact us for more information:
DOMINANT Opto Technologies Sdn. BhdLot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia.Tel: +606 283 3566 Fax: +606 283 0566E-mail: [email protected]