Development Status of EUV Sources for Use in Alpha-, Beta ...euvlsymposium.lbl.gov/pdf/2005/pres/09 1-SO-12 Stamm.pdf · E-Spec: In band / Out of Band EUV Metrology at XTREME: Calibrated

Taking light to new dimensions…

Development Status of EUV Sources for Use in AlphaDevelopment Status of EUV Sources for Use in Alpha--, , BetaBeta-- and High Volume Chip Manufacturing Tools and High Volume Chip Manufacturing Tools

Uwe Stamm, Uwe Stamm, JJüürgen Kleinschmidt, Bernd Nikolaus, Guido Schriever, rgen Kleinschmidt, Bernd Nikolaus, Guido Schriever, Max Christian SchMax Christian Schüürmann, rmann, Christian ZienerChristian Ziener

XTREME technologiesXTREME technologies4th International Symposium on4th International Symposium on

EUV LithographyEUV Lithography

San Diego, CA, 07 November 2005San Diego, CA, 07 November 2005

Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, 07 – 09 November 2005 Page 2


OutlineOutline

1. Recent news and developments1. Recent news and developments

2. Performance of XTS EUV sources for micro2. Performance of XTS EUV sources for micro--exposure tools exposure tools

3. Sources for alpha3. Sources for alpha-- and betaand beta--toolstools

4. Source technology for high volume manufacturing4. Source technology for high volume manufacturing

5. Conclusion5. Conclusion

Parts of the work were supported by the BMBF under Parts of the work were supported by the BMBF under contracts no. 13N8131 and 13N8866 and by contracts no. 13N8131 and 13N8866 and by

the European Community within the FP6 project the European Community within the FP6 project „„more more MooreMoore““, IST, IST--11--507754507754--IPIP



XTREME technologies:XTREME technologies: EUV source program expandedEUV source program expanded

a Joint Venture betweena Joint Venture between

andand

Mission: Development, manufacturing, marketing Mission: Development, manufacturing, marketing and service of high power EUV sourcesand service of high power EUV sources

Ushio Inc., Tokyo, Ushio Inc., Tokyo, JapanJapan

JENOPTIK, Jena, JENOPTIK, Jena, GermanyGermany

50%50% 50%50%

XTREME technologies, XTREME technologies, GGööttingen / Jena, ttingen / Jena, GermanyGermany



XTREME technologies:XTREME technologies: EUV metrology development integratedEUV metrology development integrated

acquired the complete EUV metrology acquired the complete EUV metrology development / manufacturing activities development / manufacturing activities

fromfrom

Wide range of calibrated source metrologyWide range of calibrated source metrologynow available from XTREME technologies,now available from XTREME technologies,Cooperation with PTB @ BESSY IICooperation with PTB @ BESSY II

Next activities:Next activities:•• continue working on metrology standardizationcontinue working on metrology standardization•• development of next generation of high powerdevelopment of next generation of high powermetrology for plasma and IF characterizationmetrology for plasma and IF characterization



EE--Spec:Spec: In band / Out of BandIn band / Out of Band

EUV Metrology at XTREME: EUV Metrology at XTREME: Calibrated standardsCalibrated standards

EE--Cam:Cam: Plasma sizePlasma sizeEE--Mon:Mon: PowerPower

EE--Mon IF: IF Power / DistributionMon IF: IF Power / Distribution



EUV Source Metrology from XTREME: EUV Source Metrology from XTREME: Calibration laboratoryCalibration laboratory

Calibration & test laboratoryCalibration & test laboratory



XTREME technologies: XTREME technologies: EUV Source development strategyEUV Source development strategy

Gas Discharge Produced Plasma Gas Discharge Produced Plasma SourceSource

Laser Produced Plasma SourceLaser Produced Plasma Source

Double TechnologyDouble Technology&&

Minimize RiskMinimize Risk

•• Droplet target developmentDroplet target development •• Source power scaling Source power scaling •• Debris mitigation / Debris mitigation / Collector lifetime extensionCollector lifetime extension

•• Collector integrationCollector integration•• Electrode lifetime improvementElectrode lifetime improvement

Main research and development activitiesMain research and development activities



OutlineOutline








XTS 13XTS 13--35:35: Xenon GDPP EUV Source in MSXenon GDPP EUV Source in MS--13 EUV Microstepper13 EUV Microstepper

Main SpecificationsMain Specifications

-- Power of 35 W in 2Power of 35 W in 2ππ sr sr at 1000 Hz at 1000 Hz

-- Optics lifetime with debris filter Optics lifetime with debris filter of 100 million pulsesof 100 million pulses

Market Introduction of XTS 13Market Introduction of XTS 13--35 ( 35 W/235 ( 35 W/2ππ) in 2003) in 2003Sources installed at Intel and International SEMATECHSources installed at Intel and International SEMATECH

XTS 13XTS 13--35 source in EUV Microstepper at Exitech35 source in EUV Microstepper at Exitech



XTS 13XTS 13--35:35: Xenon GDPP EUV Source in MSXenon GDPP EUV Source in MS--13 EUV Microstepper13 EUV Microstepper

World's first commercial EUV lithography tool World's first commercial EUV lithography tool installed at Intel (Source: Intel)installed at Intel (Source: Intel)

Current status:Current status:

Optics shows no degradation after Optics shows no degradation after operation of > 100 million pulses operation of > 100 million pulses under field conditionsunder field conditions

Sustaining product support topics: Sustaining product support topics:

•• Reliability improvements by Reliability improvements by technology upgradestechnology upgrades

•• Continuing lifetime tests under Continuing lifetime tests under field operating conditionsfield operating conditions

•• Implementation of spare part Implementation of spare part logistic and service plan logistic and service plan



XTS 13XTS 13--70 technology upgrade: 70 technology upgrade: XTS13XTS13--35 like source with 2 kHz35 like source with 2 kHz

SpecificationsSpecifications

Power:Power:70 W/270 W/2ππ at 2 kHzat 2 kHz

Corresponds Corresponds nominally to up nominally to up to 6 W available to 6 W available IF power,IF power,in burst operation,in burst operation,limited by collector limited by collector power loadpower load

Electrode lifetime of Electrode lifetime of > 80 h> 80 h



OutlineOutline








GDPP EUV Sources:GDPP EUV Sources: αα--//ββ-- tool power scalingtool power scaling

EUV Power Requirement Drives Source Architecture!EUV Power Requirement Drives Source Architecture!

Intermediate focus power at 13.5 nm: 10 Intermediate focus power at 13.5 nm: 10 -- 30 W30 W

•• Electrical input power 50 kW (MET = 10 kW)Electrical input power 50 kW (MET = 10 kW)•• New cooling concepts for electrodesNew cooling concepts for electrodes•• Adaptation of electrical high voltage circuitAdaptation of electrical high voltage circuit•• Optimized debris mitigationOptimized debris mitigation•• Collector optics integration aspects (cooling, position controlCollector optics integration aspects (cooling, position control &&

precision alignment)precision alignment)



Xenon GDPP EUV Sources:Xenon GDPP EUV Sources: Power scalingPower scaling

Stabilized Stabilized EUV power EUV power at 4000 Hz: at 4000 Hz: 200 W / 2200 W / 2π π srsr

Usable IF power:Usable IF power:10 10 –– 30 W30 W(etendue(etenduedependent)dependent)



Xenon GDPP EUV Sources:Xenon GDPP EUV Sources: Integration of collector mirrorsIntegration of collector mirrors

Collectors from two optics manufacturers integrated, Collectors from two optics manufacturers integrated, tests performed up to 4 kHz (burst)tests performed up to 4 kHz (burst)



Xenon GDPP EUV Source: Xenon GDPP EUV Source: Intermediate focus energy stabilityIntermediate focus energy stability

Source operating with 4 kHz repetition rateSource operating with 4 kHz repetition rateIntermediate focus power 12 WIntermediate focus power 12 WPulse to pulse energy stability Pulse to pulse energy stability σσ = 5.8 %= 5.8 %

Distribution of EUV Distribution of EUV radiation in IFradiation in IF



Xenon GDPP EUV Source: Xenon GDPP EUV Source: Dose stability controlDose stability control

With feedback loop: With feedback loop: Energy stability = 11.3 % Energy stability = 11.3 % Dose stability = +/Dose stability = +/-- 0.12 %0.12 %(1(1σσ, 100 pulses window), 100 pulses window)

0 500 1000 1500 20000

1

2

3

4

5

6

7

8

9

10

Pulse EnergyDose Energy

EU

V p

ulse

ene

rgy,

mJ/

sr

Pulse number0 500 1000 1500 2000

0

1

2

3

4

5

6

7

8

9

10

Pulse Energy Dose Energy

EU

V p

ulse

ene

rgy,

mJ/

sr

Pulse number

No feedback loop:No feedback loop:Energy stability = 8.49 % Energy stability = 8.49 % Dose stability = +/Dose stability = +/-- 2.34 %2.34 %(1(1σσ, 100 pulses window), 100 pulses window)

0 5 0 0 1 0 0 0 1 5 0 0 2 0 0 0-1 ,0

-0 ,8

-0 ,6

-0 ,4

-0 ,2

0 ,0

0 ,2

0 ,4

0 ,6

0 ,8

1 ,0

w ith fe e d b a c k c o n tro l s im u la t io n σ d o s e= 0 ,1 2 %

(Edo

se-E

0)/E0,%

P u ls e n u m b e r



GDPP collector optics lifetime at GDPP collector optics lifetime at αα--//ββ-- tool power leveltool power level

New collector optics protection scheme tested at up to New collector optics protection scheme tested at up to 200 W EUV power at 4 kHz (200 W EUV power at 4 kHz (10 10 –– 30 W IF power)30 W IF power)

Main challenges:Main challenges:

1.1. Sputtering by fast particles (ions, atoms)Sputtering by fast particles (ions, atoms)2.2. Deposition of material Deposition of material

(vacuum contaminations, condensable fuel,(vacuum contaminations, condensable fuel,sputtered material)sputtered material)

Xenon fuel is not condensing Xenon fuel is not condensing ––main challenge is fast particles!main challenge is fast particles!



GDPP collector optics lifetime at GDPP collector optics lifetime at αα−−/β/β−− tool power leveltool power level

average slope 1.6nm / billion(still within resolution limit)

•• Collector erosion can be stopped, Collector erosion can be stopped, below detection limitbelow detection limit

•• Results support 350 Results support 350 –– 700 hours700 hours collector coating lifetime (collector coating lifetime (5 5 –– 10 billion10 billion pulses)pulses)



Additional ion energy reduction for xenon:Additional ion energy reduction for xenon: fuel mixingfuel mixing

0

500

1000

1500

2000

2500

0 2 4 6 8

Energy (keV)

Abu

ndan

ce (a

.u.)

Pure Xenon5% Hydrogen

Addition of H2 to xenon discharge reduces:– mean energy of fast ions shifts from 6 to 4 keV– amount of fast ions approx. halved

for more details see UIUC presentations during this symposiumfor more details see UIUC presentations during this symposium

data from D. Ruzic et. al data from D. Ruzic et. al (UIUC)(UIUC)



GDPP EUV Sources:GDPP EUV Sources: αα--//ββ-- tool solutiontool solution

Conclusion from data:Conclusion from data:

•• ForFor alpha and beta tools alpha and beta tools xenonxenon--fueled GDPPfueled GDPP--sources sources offer adequate solutions!offer adequate solutions!

Main advantages:Main advantages:

•• early experience with xenonearly experience with xenon--fueled field installations exists fueled field installations exists with robust performance data with robust performance data

•• no contamination ofno contamination ofoptics by condensing fueloptics by condensing fuel

•• low complexitylow complexity



OutlineOutline








EUV Sources for HVM:EUV Sources for HVM: Generic investigationsGeneric investigations

Intermediate focus power at 13.5 nm: 115 Intermediate focus power at 13.5 nm: 115 …… > 150 W> 150 W

•• Efficiency needed > 3% Efficiency needed > 3% →→ metal fuel handlingmetal fuel handling

•• Electrical input power > 100 kW Electrical input power > 100 kW →→ electrode design and coolingelectrode design and cooling

•• Laser power > 20 kW Laser power > 20 kW →→ target and laser conceptstarget and laser concepts•• High power debris mitigationHigh power debris mitigation•• Collector optics power handling, cooling, fuel and cleaning Collector optics power handling, cooling, fuel and cleaning resistanceresistance



LPP EUV source technology development:LPP EUV source technology development: CollectorCollector

Collector with Collector with ππsrsr collection angle collection angle manufactured and characterized,manufactured and characterized,average reflectivity > 60 %average reflectivity > 60 %

IF power of > 2 W from 10 W in 2IF power of > 2 W from 10 W in 2ππsrsr

Collector chamber adjacent to Collector chamber adjacent to laserlaser

collector mirrorcollector mirror



LPP EUV Source technology development: LPP EUV Source technology development: Droplet targetDroplet target

Current source parametersCurrent source parameters

Industrial solid state lasers: 1.2 kW @ 10 kHz on targetIndustrial solid state lasers: 1.2 kW @ 10 kHz on target10 W10 W power in 2power in 2ππ sr at etendue matched plasma sizesr at etendue matched plasma size3.3 W3.3 W in intermediate focus projected with 5 sr source in intermediate focus projected with 5 sr source collectorcollectorOptics lifetime of Optics lifetime of 280 hours 280 hours or 5 billion pulsesor 5 billion pulses

New nozzle design enables generation of stable dropletsNew nozzle design enables generation of stable dropletsDroplet size 35 Droplet size 35 µµm, velocity 35 m/sm, velocity 35 m/s

Main challenges to overcome under development:Main challenges to overcome under development:

•• Droplet on demandDroplet on demand•• Droplet distance > 3 mm Droplet distance > 3 mm •• Velocity > 100 m/sVelocity > 100 m/s



GDPP EUV Sources: GDPP EUV Sources: Power scaling to HVM Power scaling to HVM –– tin resultstin results

Tin Plasma ImageTin Plasma Image

EUV powerEUV powerat 5000 Hz: at 5000 Hz:

800 W / 2800 W / 2ππ srsr

Achievable IF power: 115 W Achievable IF power: 115 W (1.9 sr collector mirror)(1.9 sr collector mirror)



Source component lifetime: Source component lifetime: Rotating disc electrodes (RDE)Rotating disc electrodes (RDE)

Rotating disc electrode GDPP:Rotating disc electrode GDPP:•• reduces heat load per cmreduces heat load per cm22

•• limits the temperature rise limits the temperature rise •• will enable several 100 hours electrode lifetimewill enable several 100 hours electrode lifetime

Principle of RDE Principle of RDE Laboratory setup of RDE sourceLaboratory setup of RDE source

Development in cooperation with V. M. Borisov et al., Development in cooperation with V. M. Borisov et al., TRINITI, Troitsk, RussiaTRINITI, Troitsk, Russia

laser beamlaser beam

rotating rotating shaftshaft

electrodeselectrodes

insulator

plasmaplasma

EUVEUV-- radiationradiation



Performances of RDE sourcesPerformances of RDE sources

3000 3500 4000 4500 50000

4000

8000

12000

16000

FWHM 0,205mm1/e² 0,455mm

x- cross section

coun

ts/p

ixel

x / µm

5000 6000 7000 8000 9000 100000

4000

8000

12000

16000

FWHM 1,21mm1/e² 2,08mm

y- cross section

coun

ts/p

ixel

y / µm

Plasma size: 1.2 mm x 0.5 mm (FW 1/ePlasma size: 1.2 mm x 0.5 mm (FW 1/e22) )


Taking light to new dimensions…0 500 1000 1500 2000

0

5

10

15

207m42s;PRR=2910Hz;IGBT;Eзап=4.3J; 2rps

EU

V,m

v

Time,ms

Performances of RDE sourcesPerformances of RDE sources

130 W of EUV output power after 10 min 130 W of EUV output power after 10 min of continuous operation at 3 kHzof continuous operation at 3 kHz

0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,20

10

20

30

40

50

60

0,0

0,5

1,0

1,5

2,0

2,5

3,0

EUV-

Ener

gy/2

πsr [

mJ]

Stored Energy in C1 [J]

CE/

2π [%

]



OutlineOutline








Conclusion for EUV source technology and topicsConclusion for EUV source technology and topics

αα−− / β/ β−− tool sourcestool sources•• Will be based on xenon GDPP sourcesWill be based on xenon GDPP sources•• IF power of 10IF power of 10--30 W 30 W

with reasonable electrode and optics lifetimewith reasonable electrode and optics lifetime

HVM source developmentHVM source development•• Target development for LPPTarget development for LPP•• Electrode configurations Electrode configurations –– rotating electrodesrotating electrodes•• Optics protection, contamination reduction and cleaningOptics protection, contamination reduction and cleaning•• High power debris mitigationHigh power debris mitigation•• Collector optics power handling, cooling, Integrated source Collector optics power handling, cooling, Integrated source

diagnostics and feedback controldiagnostics and feedback control



EUV Sources: PEUV Sources: Power roadmapower roadmap

* roadmap of source products, not of laboratory * roadmap of source products, not of laboratory ““champion champion datadata””

Year Intermediate focus power

2005 10 – 20 W

2006 30 – 50 W

2007 80 – 120 W

2010 > 150 W



We thank your partners atTRINITI, Troitsk, Russia; University of Illinois at Urbana Champaign, USA;

Argonne National Lab, USA; MediaLario Technologies, Italy;Zeiss Laser Optics, Germany; Institute for Optics and Fine Mechanics, Jena,

Germany; Institute for Lasertechnik Aachen, Germany

XTREME contributions from H. Ahlbrecht, I. Ahmad, I. Balogh, H. Birner, D. Bolshukhin, J. Brudermann, J. Bürger, R. de Bruijn, L. Dippmann, G. Dornieden, H. Ebel, A. Eickhoff, S. Enke, F. Flohrer, F. Friedrichs, A. Geier, S. Götze, B. Grote, A.

Hoang, A. Keller, D. Klöpfel, V. Korobochko, B. Mader, M. Möritz, R. Müller, J. Ringling, B. Tkachenko, D.C. Tran, M. Wegstroth, C. Ziener et al.

Parts of the work were supported by the BMBF under contracts no. 13N8131 and 13N8866 and by the European Community within

theFP6 project „more Moore“, IST-1-507754-IP

AcknowledgementAcknowledgement

Documents

Development Status of EUV Sources for Use in Alpha-, Beta ...euvlsymposium.lbl.gov/pdf/2005/pres/09 1-SO-12 Stamm.pdf · E-Spec: In band / Out of Band EUV Metrology at XTREME: Calibrated