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Circuit design with a commercial 0.13 m CMOS technology for high
energy physics applications
K. Hänsler, S. Bonacini, P. Moreira
CERN, EP/MIC
LECC 2003 Kurt Hänsler - CERN 2
Outline Background Technology presentation Test module Radiation tolerance Bandgap Dual port SRAM Time to digital converter Conclusions
LECC 2003 Kurt Hänsler - CERN 3
Background
Can we take profit from this new technology?– Radiation tolerance?– Higher functional density?– Use in high energy physics experiments?– Commercial libraries?– Costs?
LECC 2003 Kurt Hänsler - CERN 4
Technology presentation
Technology features• 0.13m generation CMOS technology• All copper technology, 4 – 8 metal levels• Core supply 1.2V & 1.5V• I/O voltages 2.5V & 3.3V• Triple gate oxide (1.7nm, 2.2nm, 5.2nm)• Non-epi p- substrate
Device options• Standard, low Vt, high Vt NMOS and PMOS, ZeroVt NMOS• Ultra thin gate oxide NMOS and PMOS• Thick oxide NMOS, PMOS and ZeroVt NMOS• n+ diffusion and p+ polysilicon resistors• Metal-insulator-metal precision capacitors
LECC 2003 Kurt Hänsler - CERN 5
Test module 5x5mm module in foundry
MPW – Test structures– Basic circuit building
blocks: SRAM, TDC, Bandgap, Serializer, Shift Register, AFP
Design start Jul-03Submission Nov-03Reception Mar-04
Cooperation with RAL and Imperial College London
LECC 2003 Kurt Hänsler - CERN 6
Radiation tolerance: TID, 30 Mrd
Linear transistors with 1.7 nm and 2.2 nm physical gate oxide thicknesses present a promising natural TID hardness.No worries for a number of environments.
Linear transistors with 5.2nm gate oxide are more sensitive: careful use.
Further information: K. Hänsler et al.
“TID and SEE performance of a commercial 0.13 m CMOS technology”
Proceedings RADECS 2003
LECC 2003 Kurt Hänsler - CERN 7
Radiation tolerance: SEE
SEU cross section in order of magnitude of older technologies.
Influence of supply voltage and TID on SEU cross section as foreseen and expected in the past.
Further information: K. Hänsler et al.
“TID and SEE performance of a commercial 0.13 m CMOS technology”
Proceedings RADECS 2003
LECC 2003 Kurt Hänsler - CERN 8
Bandgap: Structure
New structure required
due to low supply voltage.
Standard structure based on the sum of the built-in
voltage of a diode and of the thermal voltage.
LECC 2003 Kurt Hänsler - CERN 9
Bandgap: Structure
VVR
RVV BGBGref 25.1,
2
4
LECC 2003 Kurt Hänsler - CERN 10
Bandgap: Results
Reference Voltage: 0.587V
Power supply sensitivity: 14mV/V
Temperature sensitivity: 0.22mV/K
Minimum supply voltage: 1V
Current consumption: 310A @ 1.5V
LECC 2003 Kurt Hänsler - CERN 11
-10
0
10
20
30
40
0.1 1 10 100 1000
Dose [Mrd]
DV
ref
[mV
]Irradiation Annealing
24h,25 C
168h,100 C
Bandgap: Irradiation
Reference voltage before irradiation: 587mV
LECC 2003 Kurt Hänsler - CERN 12
Bandgap: Comparison with 0.25 m0.13 m 0.25 m
Die area 46 800 m2 110 000 m2
Nominal supply voltage 1.5 V 2.5 V
Operational supply voltage range 1.0…1.7 V 1.4…2.7V
Temperature sensibility of reference voltage
+0.22 mV/K -0.22 mV/K
Nominal reference voltage 0.587 V 1.175 V
Reference voltage variation over supply voltage range
< 10 mV < 1mV
LECC 2003 Kurt Hänsler - CERN 13
SRAM: Structure•1.5 V supply
•Memory size 256x9 bits
•Physical size: 553m X 129m
LECC 2003 Kurt Hänsler - CERN 14
SRAM: Memory cell2 cross-coupled inverters
2 enclosed NMOS
2 PMOS
2 PMOS pass transistors
Cell size 3.73m X 2.58m
LECC 2003 Kurt Hänsler - CERN 15
SRAM: Results
All cells fully functional for supply voltages above 1.6V and frequencies up to 75 MHz.
Read operation down to 0.8V Write operation: limited operation range Power consumption
– 3.84mW @ 25MHz– Increase rate 104W/MHz
in future: no enclosed layout, but EDAC
LECC 2003 Kurt Hänsler - CERN 16
SRAM: Comparison 0.25 m
0.13 m 0.25 m
Cell size 9.62 m2 m2
Nominal supply 1.6 V 2.5 V
Access time 5.1 ns 4.5 ns
Maximum operation frequency
75 MHz 70 MHz
LECC 2003 Kurt Hänsler - CERN 17
TDC: Structure
LVDS
DATA
DELAYLINE
LVDSRECEIVER
PHASEDETECTOR
CHARGEPUMP
HIT ANDREADOUT
LOGIC
HIT
LECC 2003 Kurt Hänsler - CERN 18
TDC: Delay Cell
IN OUT
VC+
VC-
VDD
Ib Ib
Ib Ib
LECC 2003 Kurt Hänsler - CERN 19
TDC: Results I
40
50
60
70
80
90
100
110
0 0.5 1 1.5
Control voltage [V]
Del
ay p
er d
elay
cel
l [p
s]
nom. process, slow modenom. process, fast mode
slow process, slow modeslow process, fast mode
78.125psps
bins
ns125.78
128
10
LECC 2003 Kurt Hänsler - CERN 20
40
50
60
70
80
90
100
0 0.5 1 1.5
Control voltage [V]
Del
ay p
er d
elay
cel
l [p
s]
pre-rad, slow modepre-rad, fast mode
75 Mrd, slow mode75 Mrd, fast mode
78.125ps
TDC: Results II
psbins
ns125.78
128
10
LECC 2003 Kurt Hänsler - CERN 21
TDC: Results III
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
1.2
0 16 32 48 64 80 96 112 128
BinDif
fere
nti
al N
on
lin
eari
ty D
NL
[b
in]
LECC 2003 Kurt Hänsler - CERN 22
Conclusions
Natural radiation tolerance
Higher functional density / Use in HEP experiments
3 prototypes, linear and enclosed designs, with satisfying results presented
CostsTechnology is in full production BUT still very high engineering costs
Low voltage design challenge
Use of commercial library possible
LECC 2003 Kurt Hänsler - CERN 23
Besten Dank für Ihre Aufmerksamkeit.Grazie per la vostra attenzione.Muito obrigado pela vossa atenção.
Thank you for your attention.Je vous remercie de votre attention.
Acknowledgements: J. Christiansen,F. Faccio, K. Kloukinas, A. Marchioro,R. Szczygiel, G. Cervelli, E. Murer