Capture Mixed Signal

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    A Course Material of

    TWO DAY WORKSHOP

    OnSIMULATION AND PROTO-TYPE

    MODEL OF POWER ELECTRONIC

    CIRCUITS USING PSPICE

    By:

    Gopi Srikanth VSr. Development Engineer

    TIFAC-CORE

    TIFAC-CORE @ VIT University, Vellore

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    ORCAD CAPTURE (PSPICE):-

    Procedure:

    Steps to create modeling by using ORCAD CAPTURE/PSPICE:1. Click on File New Project.2. On Resulting window give the name of project using mostly starting

    with letters

    (a-z) followed by numbers like for EXAMPLE gopi12 is the name of

    the project.3. Create a New Project using Analog or Mixed Signal Circuit Wizard.4. Give the Location of Project by Default it goes into C: DRIVE click

    on new folder save the file name as PSPICE.5.No Need to add any PSPICE part libraries to project.6. Click on Finish.7. You will Observe ORCAD CAPTURE SCHEMATIC Page which is

    used for simulating the circuits.8. Place the components in SCHEMATIC using keyboard shortcut as

    P button, W button stands for wiring components and finally place theground which is named as 0 from PSPICE parts list. Ground is

    compulsory for simulating the circuit using PSPICE.

    Simulating the SCHEMATIC:-

    AFTER Completing the Schematic circuits like this click on NewSimulation Profile give any name using letters for EXAMPLE(dedefffrf) then Click ENTER. It will ask to give Simulation

    parameters. You have to give start time as 0. And stop time as dependson Schematic circuit parameters, So give stop time values like 5sec.,

    0.1sec, 0.1m, 3m etc. mostly in lower values.

    TIFAC-CORE @ VIT University, Vellore

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    Experiment1:-

    1-PHASE HALF WAVE CONTROLLED RECTIFIER USING

    R,RL,RLE LOADS:

    SCHEMATIC:

    New Simulation Profile Parameters:-

    Run to time: 0.1s (TSTOP)Start saving data after 0 seconds

    Remaining parameters are available in this circuit itself

    TIFAC-CORE @ VIT University, Vellore

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    Experiment2:-

    3-PHASE FULL WAVE CONTROLLED RECTIFIER BY USING

    AC SOURCE INDUCTANCE WITH R, RL and RLE LOADS:

    SCHEMATIC:

    TIFAC-CORE @ VIT University, Vellore

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    New Simulation Profile Parameters:-

    Run to time: 0.07 or70ms (TSTOP)Start saving data after 0 seconds

    Remaining parameters are available in this circuit itself

    Experiment3:-

    a)Type A Chopper Model:

    SCHEMATIC:

    New Simulation Profile Parameters:-

    Run to time: 200us (TSTOP)

    Start saving data after 0 secondsMOSFET Vpulse parameters are:-

    V1=0, V2=5, Td=0, Tr =0.1n, Tf=0.1n, PW= 4u, PER= 25uRemaining parameters are available in this circuit itself

    b) Type B Chopper Model:

    SCHEMATIC:

    TIFAC-CORE @ VIT University, Vellore

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    New Simulation Profile Parameters:-

    Run to time: 4*0.4ms or4e-4s (TSTOP)Start saving data after 0 seconds

    MOSFET Vpulse parameters are:-

    V1=0, V2=5, Td=0, Tr =0.1u, Tf=0.1u, PW= 10u, PER= 100uRemaining parameters are available in this circuit itself

    c) Type C Chopper Model:

    SCHEMATIC:

    New Simulation Profile Parameters:-

    Run to time: 100us (TSTOP)

    Start saving data after 0 secondsMOSFET1 Vpulse parameters are:-

    V1=0, V2=5, Td=0, Tr =0.1n, Tf=0.1n, PW= 4u, PER= 25u

    MOSFET2 Vpulse parameters are:-V1=0, V2=5, Td=10u, Tr =0.1n, Tf=0.1n, PW= 4u, PER= 25uRemaining parameters are available in this circuit itself

    TIFAC-CORE @ VIT University, Vellore

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    d) Type D Chopper Model:

    SCHEMATIC:

    New Simulation Profile Parameters:-

    Run to time: 100us (TSTOP)

    Start saving data after 0 seconds

    MOSFET1 Vpulse parameters are:-V1=0, V2=5, Td=0, Tr =0.1u, Tf=0.1u, PW= 5u, PER= 20uMOSFET2 Vpulse parameters are:-

    V1=0, V2=5, Td=10u, Tr =0.1u, Tf=0.1u, PW= 5u, PER= 20u

    Remaining parameters are available in this circuit itself

    TIFAC-CORE @ VIT University, Vellore

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    Experiment4:-

    3- 180 Mode Voltage Source Inverter (VSI):

    SCHEMATIC:

    New Simulation Profile Parameters:-

    Run to time: 0.1ms (TSTOP)

    Start saving data after 0 secondsMOSFET switching frequency consider as 40KHZ.

    MOSFET1and MOSFET6 Vpulse parameters are:-V1=0, V2=10, Td=2.25u, Tr,Tf=0.1n, PW= 8u,PER= 25u

    MOSFET3 and MOSFET2 Vpulse parameters are:-V1=0, V2=10, Td=8.33u, Tr,Tf=0.1n, PW= 8u,PER= 25u

    MOSFET5 and MOSFET4 Vpulse parameters are:-V1=0, V2=10, Td=16.67u, Tr,Tf=0.1n, PW= 8u,PER= 25u

    TIFAC-CORE @ VIT University, Vellore

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    Experiment5:-

    Ultra-Capacitors charging power backup:

    SCHEMATIC:

    New Simulation Profile Parameters:-

    Run to time: 100s (TSTOP)

    Start saving data after 0 secondsSeries resistance with Super Capacitance = 0.35ohms

    Super Capacitance value = 25FaradsZener diode 3 in numbers series pass regulator

    Remaining parameters are available in this circuit itself

    TIFAC-CORE @ VIT University, Vellore

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    Experiment6:-

    a) (DC-DC) Buck Converter:

    SCHEMATIC:

    New Simulation Profile Parameters:-

    Run to time: 3ms (TSTOP)Start saving data after 0 seconds

    MOSFET Vpulse parameters are:-V1=0, V2=15, Td=0, Tr =10n, Tf=10n, PW= 0.004m, PER= 0.01m

    Remaining parameters are available in this circuit itself

    TIFAC-CORE @ VIT University, Vellore

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    b) (DC-DC) Boost Converter:

    SCHEMATIC:

    New Simulation Profile Parameters:-

    Run to time: 4ms (TSTOP)

    Start saving data after 0 secondsMOSFET Vpulse parameters are:-

    V1=0, V2=15, Td=0, Tr =10n, Tf=10n, PW= 0.004m, PER= 0.01mRemaining parameters are available in this circuit itself

    TIFAC-CORE @ VIT University, Vellore