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BIBLIOGRAPHY
A. REVIEW ON THE HISTORY OF CRYSTAL GROWTH
1. Nassau, K., Dr A. V. L. Verneui1: The Man and the Method, J. Crystal Growth, 13/14, 12-18, 1972.
2. Brissot, J. J., A History of Crystals, Acta E1ectronica, 16, 285-290, 1973.
3. Bohm, J., Die Historiche Entwicklung der Kristal1zuchtung - Eine Bibliographie, Crystal Research and Technology, 16, 275-292, 1981.
4. Bohm, J., The History of Crystal Growth, Acta Physica Hungarica, 57, 161-178, 1985.
B. PHASE DIAGRAMS AND THERMODYNAMICS OF SOLIDS, SOLUBILITY DATA, SOLVENT CHEMISTRY
1. Levin, E. M., Robbins, C. R. and McMurdie, H. F., Phase Diagrams for Ceramists, The American Ceramic Society, Vol. 1-5, 1964-1984.
2. Lagowski, J. J., ed. of series, The Chemistry of Non-Aqueous Solvents, Academic Press, 1966.
3. Gordon, P., Principles of Phase Diagrams in Materials Systems, McGraw-Hill, 1968.
4. Haase, R. and Schonert, H., Solid-Liquid Equilibrium, Pergamon Press, 1969.
5. Reisman, A., Phase Equilibria, Basic Principles, Applications, Experimental Techniques, Academic Press, 1970.
6. Swa1in, R. A., Thermodynamics of Solids, Wiley, 1972. 7. Alper, A. M., ed., Phase Diagrams, Materials Science and Technology,
Vol. 1-5, Academic Press, 1970-1978. 8. Kaufman, L. and Bernstein, H., Computer Calculation of Phase
Diagrams, Academic Press, 1970. 9. Franks, F., ed. of series, Water, a Comprehensive Treatise, Plenum
Press, 1972. 10. Pelton, A. D. and Thompson, W. T., Phase Diagrams, Progress in Solid
State Chemistry, Vol. 10, 119-155, Pergamon Press, 1976. 11. Freier, R. K., ed. of series, Aqueous Solutions, W. de Gruyter, 1976. 12. Linke, W. F., ed., Solubilities, Inorganic and Metal-Organic
Compounds, Vol. 1-2, American Chemical Society, 1958-1965. 13. Stephen, H. and Stephen, T., Solubilities of Inorganic and Organic
Compounds, Vol. 1, Pergamon Press, 1979. 14. Broul, M., Nyvlt, J. and Sohne1, 0., Solubility in Inorganic Two
Component Systems, Elsevier Scientific Publishing Company, 1981.
C. BASIC PRINCIPLES
1. Volmer, M., Kinetik der Phasenbildung, Steinkopff, 1939. 2. Honigmann, B., Gleichgewichts und Wachstumsformen von Kristallen,
Steinkopff, 1958.
411
3. 4.
5.
6. 7.
8.
9.
10. 11.
12.
13. 14. 15.
16. 17.
18.
D.
1. 2. 3. 4. 5. 6.
7. 8.
9.
10.
11. 12.
13.
14. 15.
16.
17.
Van Hook, A., Crystallization, Theory and Practice, Reinhold, 1961. Hirth, J. P. and Pound, G. M., Condensation and Evaporation,
MacMillan, 1963. Rutter, E., Goldfinger, P. and Hirth, J. P., eds., Condensation and
Evaporation of Solids, Gordon and Breach, 1964. Ubbelohde, A. R., Melting and Crystal Structure, OUP., 1965. Powell, C. P., Oxley, J. H. and Blocher, J. M. jr., eds., Vapor
Deposition, Wiley and Sons, 1966. Jackson, K. A., Current Concepts of Crystal Growth from the Melt, in:
Progress in Solid State Chemistry, Vol. 4, Pergamon Press, 1967. Strickland-Constable, R. F., Kinetics and Mechanism of
Crystallization, Academic Press, 1968. Zettlemoyer, A. C., Nucleation, Dekker, 1969. Parker, R. L., Crystal Growth Mechanisms - Energetics, Kinetics and
Transport, in: Solid State Physics - Advances in Research and Applications, Vol. 25, Academic Press, 1970.
Ohara, M. and Reid, R. D., Modelling Crystal Growth Rates from Solutions, Prentice Hall, 1973.
Heimann, R. B., Auflosen von Kristallen, Springer, 1975. Hannay, N. B., Changes of State, Plenum Press, 1975. Rosenberger, F., Fundamentals of Crystal Growth (I), Springer, 1979,
Vo1s. II and III to follow. Brice, J. C., Crystal Growth Processes, Blackie Halsted Press, 1986. Kurz, W. and Fisher, D. J., a) Fundamentals of Solidification; b)
Solutions Manual, Trans Tech Publications, 1986. Vere, A. W., Crystal Growth, Principles and Progress, Plenum, 1988.
GENERAL TREATISES
Buckley, H. E., Crystal Growth, Wiley and Sons, 1951. Smakula, A., Einkrista11e, Springer, 1962. Gilman, J. J., The Art and Science of Growing Crystals, Wiley, 1963. Chalmers, B., Principles of Solidification, Wiley, 1964. ColI. Int. CNRS, Adsorbtion et Croissance Cristalline, Paris, 1965. Knight, Ch. A., The Freezing of Supercooled Liquids, Van Nostrand,
1967. Laudise, R. A., The Growth of Single Crystals, Prentice Hall, 1970. Tarjan, I. and Matrai, M., Laboratory Manual on Crystal Growth,
Akadecuiai Kiado Budapest, 1972. Wilke, K. Th. and J. Bohm, Kristal1zuchtung, Verlag Harri Deutch,
Franfurt/Main, 1988. Goodman, C. H. L., Crystal Growth - Theory and Techniques, Vol. 1-2,
Plenum Press, 1976-1978. Bond, W. L., Crystal Technology, Wiley and Sons, 1976. Wilcox, W. R., Preparation and Properties of Solid State Materials,
Vol. 1-4, in: Chemical Vapor Transport, Secondary Nucleation and Mass Transfer in Crystal Growth, Dekker, 1971-1979.
Bardsley, W., Hurle, D. T. J. and Mullin, J. B., Crystal Growth: A Tutorial Approach, North Holland Series in Crystal Growth, Vol. 2, Amsterdam, 1979.
Pamplin, B., Crystal Growth, Pergamon Press, 1980. Holden, A. and Morrison, P., Crystals and Crystal Growing, MIT Press,
1982. Chernov, A. A., Modern Crystallography III, Springer Series Solid
State Science 36, 1984. Current Topics in Materials Science, North Holland, ca. 15 Volumes up
to 1987. 18. Crystals, Springer, ca. 12 Volumes up to 1987. 19. Growth of Crystals, Plenum Press, ca. 12 Volumes up to 1987. 20. Preparation and Properties of Solid State Materials, Dekker, ca. 12
Volumes up to 1987.
412
21. Important Titles in Solid State Technology: a) Semiconductors and Metals, ca. 20 Volumes up to 1985; b) VLSI - Electronics, ca. 8 Volumes up to 1985; c) Physics of Thin Films, ca. 12 Volumes up to 1985, Academic Press.
E. SPECIAL METHODS OF CRYSTAL GROWTH
1. Pfann, W. G., Zone Melting, Wiley and Sons, 1958, 1966. 2. Park, N. L., Zone Refining and Allied Techniques, G. Newness, 1960. 3. Schafer, H., Chemical Transport Reactions, Academic Press, 1964. 4. Schildknecht, H., Zonenschmelzen, Verlag Chemie, 1964. 5. Bockris, J. and O'M. Razummey, G. A., Fundamental Aspects of
Electrocrystallization, Plenum Press, 1967. 6. Ovsienko, D. E., Growth and Imperfections of Metallic Crystals,
Consultants Bureau, 1969. 7. Petrov, T. G., Treivus, E. C. and Kasatkin, A. P., Growing Crystals
from Solutions, Consultants Bureau, 1969. 8. Henisch, H. K., Crystal Growth in Gels, Penn State University Press,
1970. 9. Lobachev, A. N., Hydrothermal Synthesis of Crystals, Consultants
Bureau, 1971. 10. Brice, J. C., The Growth of Crystals from Liquids, North Holland,
1973. 11. Lobachev, A. N., Crystallization Processes under Hydrothermal
Conditions, Consultants Bureau, 1974. 12. Faktor, M. M. and Garrett, I., Growth of Crystals from the Vapor,
Chapman and Hall, 1974. 13. Elwell, D. J. and Scheel, H. J., Crystal Growth from High Temperature
Solutions, Academic Press, 1975. 14. Matthews, J. W., Epitaxial Growth (Parts I and II), Academic Press,
1975. 15. Schneider, H. G., Ruth, V. and Kormany, T., Advances in Epitaxy and
Endotaxy, Elsevier Scientific Publishing Company, 1976. 16. Eyer, A. and Zimmermann, H., Flussig und Gaszonen Kristallization
unter Schwerlosigkeit, Bundesministerium fur Forschung und Technologie, Forschungsbericht W 77-12, Munchen, 1977.
17. Lewis, B. and Anderson, J. C., Nucleation and Growth of Thin Films, Academic Press, 1978.
18. Rudolph, P., Profilzuchtung von Einkristal1en, Akademie Verlag, 1982. 19. Ploog, K. and Graf, K., Molecular Beam Epitaxy of III-V Compounds,
Springer, 1983. 20. Henisch, H. K., Crystals in Gels and Liesegang Rings, Cambridge
University Press, 1988.
F. SPECIAL MATERIALS
1. Runyau, W. R., Silicon Semiconductor Technology, McGraw Hill, 1965. 2. Sittig, M., Semiconductor Crystal Manufacture, Noyes Development,
1969. 3. Kosalopova, T. Ya., Carbides: Properties, Production and
Applications, Plenum Press, 1971. 4. Connolly, T. F., ed., Semiconductors: Preparation, Crystal Growth and
Properties, Plenum Press, 1972. 5. Standley, K. J., Oxide Magnetic Materials, Clarendon Press, 1972. 6. Craik, D. J., Magnetic Oxides, Parts 1/2, Wiley and Sons, 1975. 7. Shay, J. L. and Wernick, J. H., Ternary Chalcopyrite Semiconductors -
Growth, Electronic Properties and Applications, Pergamon Press, 1975.
8. Wunderlich, B., Macromolecular Physics - Macromolecular Crystals, Vol. 2, in: Crystal Nucleation, Growth, Annealing, Academic Press, 1976.
413
9. Lieth, R. M. A., Preparation and Crystal Growth of Materials with Layered Structures, Reidel Publ. Co., 1977.
10. Matkovich, V. I., ed., Boron and Refractory Borides, Springer Verlag, 1977.
11. Cullen, G. W. and Wang, C. C., eds., Heterostructure Semiconductors of Electron Devices, Springer Verlag, 1978.
12. Rooijmans, C. J. M., Crystals, Vol. 1, in: Crystals for Magnetic Applications, Springer Verlag, 1978.
13. Wunderlich, B., Selected Papers on Polymer Crystallization, North Holland, 1979.
14. Arizumi et al., Crystals, Vol. 4, in: Organic Crystals, Germanates, Semiconductors, Springer Verlag, 1980.
15. Belyaev, L. M., ed., Ruby and Sapphire, NBS, Washington DC., 1980. 16. Nassau, K., Gems Made by Man, Chilton Book Co., 1980. 17. Moss, T. S., ed., Handbook on Semiconductors, Vol. 3, S. P. Keller,
ed., Materials and Preparation, North Holland, 1980-1981. 18. Nishizawa, J., ed., Semiconductor Technologies, Vol. I, North Holland
Publ. Co., 1982. . 19. Suematsu, Y., ed., Optical Devices and Fibers, Vol. 3, North Holland
Publ. Co., 1982. 20. Kitagawa, T., ed., Computer Science and Technologies, North Holland
Publ. Co., 1982. 21. McPherson, A., Preparation and Analysis of Protein Crystals, Wiley,
1982. 22. Nassau, K., Gemstone Enhancement, Butterworth, 1984.
G. INDUSTRIAL CRYSTALLIZATION
1. Bamworth, A. W., Industrial Crystallization, Leonard Hill, 1965. 2. Walton, A. G., The Formation and Growth of Precipitates,
Interscience, 1967. 3. Matz, C., Die Kristallisation: Grundlagen und Technik, Springer,
1968. 4. Matz, C., Die Kristallisation in der Verfahrenstechnik, Springer,
1968. 5. Nyvlt, J., Industrial Crystallization from Solutions, Butterworth,
1971. 6. Randolpf, A. D. and Larson, M. A., Theory of Particular Processes,
Academic Press, 1971. 7. Mullin, J. W., Crystallization, Butterworth, 1972. 8. De Jong, E. J. and Jancic, S. J., Industrial Crystallization, North
Holland, 1979. 9. Nyvlt, J., Industrial Crystallization: The Present State of the Art,
Verlag Chemie, 1982.
H. PROCEEDINGS OF INTERNATIONAL MEETINGS AND SUMMER SCHOOLS
1. Int. Meetings on Crystal Growth (ICCG), Published as separate Volumes of J. Crystal Growth, since 1968 every three years.
2. International Special Conference on Vapor Growth and Epitaxy, Published as separate Volumes of J. Crystal Growth, since 1970 every 2 to 3 years.
3. Reports of Summer schools organized by Int. Org. on Crystal Growth, since 1973 every 3 years, North Holland.
4. Reports on Multinational Meetings in Russia, since 1958 about 20 Volumes, Growth of Crystals, Consultants Bureau, in English.
I. PERIODICALS
1. Journal of Crystal Growth. 2. Materials Research Bulletin.
414
3. Crystal Research and Technology. 4. Progress in Crystal Growth and Characterization. 5. Soviet Physics: Crystallography. 6. Journal of Synthetic Crystals, Chinese edition with English abstracts
and legends, quarterly.
J. NEWSLETTERS (NATIONAL)
1. British Association for Crystal Growth, Newsletter Secretary: J. G. Wilkes, Mullard Ltd., Southampton, Hampshire S09 7BP, UK.
2. Group Francais de Croissance Cristalline, GFCC, Secretary: J. J. Metois, CNRS, CRMC2, Campus de Luminy, Case 913, F-13288 Marseille Cedex 9, France.
3. Deutsche Gesellschaft fur Kristallzlichtung und Kristallwachstum, DGKK, Ed.: G. Muller, Institut fur Werkstoffwissenschaften VI, Universitat Erlangen, Nlirnberg, Martensstr. 7, D-8S20 Erlangen, Germany.
4. Schweizerische Gesellschaft fur Kristallographie, Sektion fur Kristallwachstum und Materialforschung, Secretary: J. Hulliger, Institute of Quantum Electronics, Swiss Federal Institute of Technology, CH-8093, Zurich, Switzerland.
K. ABSTRACTS AND BIBLIOGRAPHY
1. Chemical Abstracts Selects: Crystal Growth, since 1980. 2. Bulletin Signaletique, Centre National de la Recherche Scientifique,
France, 26 Rue Boyer, F-7S97l Paris Cedex 20, France. 3. Keesee, A. M., Connolly, T. F. and Battle, G. C., jr., Crystal
Growth Bibliography, Part A: Bibliography; Part B: Indexes, IPI/Plenum, 1979.
L. SURVEYS OF ACTIVITIES IN CRYSTAL GROWTH
1. International Directory of Solid State Materials - Production and Research, Research Materials Information Center (RMIC) by T. F. Connolly, Oak Ridge National Laboratory, PO Box X, Oak Ridge, Tennessee 37830, USA.
2. Sources of Single Crystals in the UK and Scandinavia, B. M. R. Wanklyn, Clarendon Laboratory, University of Oxford, UK.
3. Reports of Electronic Materials Unit, Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcestershire WRl4 3PS, UK.
4. Report by the Centre de Documentation sur les Syntheses Cristalline, Laboratoire de Physique Moleculaire et Cristalline, Faculte des Sciences, Place Eugene Bataillon, F-34000 Montpellier, France.
5. Information on Crystal Growth, Germany, Netherlands, Switzerland, Report of DKGG, A. Rauber and R. Nitsche, Universitat und Fraunhofer Intitut, Freiburg i.Br., BRD.
415
INDEX
Abstracts and bibliography. 415 Accelerated crucible rotation
technique (ACRT). 140 Acetone-succinonitrile alloys.
181-182 Activation energy. nucleation.
formula. 263 Adatoms. occupying Kessel crystal.
113 Adhesive-type growth (illus.).
260-261 Adsorption isotherm.
Henry's Law. 154-155 kinked face (illus.). 56 see also Langmuir adsorption
isotherm Akermanite. metastable nucleation.
264 Alizarine crystals. halides. 147 Alloys.
acetone-succinonitrile. 181-182 aluminium-copper. 90-91 aluminium-manganese. 101 aluminium-silver. 101 growth. molecular beam epitaxy.
368 indium-containing. 303-304 indium-germanium. 318 nickel-based. grain boundaries.
288 silver-copper. 101-102 solidification.
combined transport model. 178-181
Ivantsov's basic model. 178 Aluminium oxide. grown by LHPG
method. 293 Aluminium-copper alloy. stability
function (illus.). 90-91 Aluminium-manganese alloy.
restabilization rates. 101 Aluminium-silver. stability in G-V
plane (illus.). 101 Ampoules.
cadmium 'soft ampoule' (illus.). 338
for sublimation growth (illus.). 342
Andesite. dynamic crystallization processes. 261
ANNNI models. polytypes. 198
Anorthite. metastable nucleation. 264
Antiphase boundary. mechanism of formation (illus.). 389·391
APOMVPE see AtmospheriC pressure organometallic vapor phase epitaxy
Apparatus. Bridgman. for CdTe (illus.). 338 cadmium 'soft ampoule' method
(illus.). 338 crucibles. 138-139 crystal growth in flight. 207 Czochralski pulling of silicon
(illus.). 325-327 diffusionless' technique of
crystal growth from vapors. 112
EFG dies. interface shapes. 280 floating orifice (illus.). 278 flux growth. 139 furnaces. 138-139 heat balance in Czochralski
growth. 326 holographic interferometry. 206 horizontal ribbon growth (illus.).
287-288 III - V compounds. automated
puller. 353 liquid encapsulated Czochralski
(LEC). 351 liquid phase epitaxy. 400 molecular beam epitaxy growth
chamber. 361 multidirectional holographic
interferometry. 213 open-tube/closed-tube techniques.
339-344 ribbon against drop method. 286 ribbon to ribbon growth. 287 self-filling tube. 278-279 seven hole tube die. 281 silicon on ceramic process. 286 silicon deposition. 319 Stepanov's method. shaped
crystals. 277 thermocouples. 138 thermostic cell. 207 vapor diffusion crystal growth.
245 vapor growth.
417
Apparatus (continued) vapor growth (continued)
ampoule and deposition methods. 108
diffusionless. 112 physical vs chemical
deposition. 108 physical vs chemical transport.
108 Aragonite. nucleation. 262 Array dendrites. and solute layers
in eutectic growth. 77 Arsine. safety considerations.
311-312 Atmospheric pressure organometallic
vapor phase epitaxy. abrupt interfaces. 311
Atomic roughness. 'constant-bond' approach. 115 Kessel crystal. 113 model. 113-117 'variable-bond' approach. 116
Auger electron spectroscopy (AES). 370-371
Axial next nearest neighbour Ising (ANNNI). 198
Bacteriorhodopsin. isolation. 243 Basalt.
dynamic crystallization processes. 259-262
phenocrysts. 259 textures. dynamic crystallization
processes (illus.). 261 BCF theory (Burton. Cabrera and
Frank). 60-62 Berg effect. 255 Beryllium. p-type dopant. 376-377.
379 Binary semiconductors. 335-344.
347-356 Binary systems. phase diagrams.
applications. 12-17 Borates. flux systems. 134 Born-Stern approximation. defined.
54 Boron nitride. pyrolitic crucibles.
352 Boundary layers.
Burton. Prim and Slichter's basic state. 93
convective transport. 79 deformable. 93. 98 diffusion/convection.
layer thickness. 403 and supersaturation. 402
diffusive transport. 79 double thermosolutal diffusion. 98 general behaviour of scaling laws.
82-83 Hurle's rigid. 93 interface.
melt quenching. 98-99 tension. 101
phenomena. 78-80 Bragg-Williams approximation. 113
418
Bridgman apparatus for CdTe (tllus.). 338
Bridgman methods of GaAs growth. 349-350
Bridgman-type solidification (illus.). 82. 85
Bubbles. in inclusions. 128 Bulk convection.
Coriell's model. 98 Hennenberg's model. 98
Bulk melting. 117 Bulk vaporization. and creation of
bulk vacancies. 115 Burgers vector. 159. 201
Cadmium. in binary II - VI semiconductor
compounds. 335-344 Cd:Te system (illus.). 336-337 'soft ampoule' method (illus.).
338 Calcite structure type. epitaxy. 146 Capillarity approximation.
crystalline clusters. 39-40 defined. 29 precision of calculations. 41-42 very small clusters (footnote). 30
Capillarity effects. dendritic growth. 170
Capillary action shaping technique (CAST). 284
Capillary drawing (illus.). fiber growth techniques. 291
Capillary growth. 298 Casting. turbine blades. 288-289 CBE see Chemical beam epitaxy Cerium. solid solution range. phase
relationships (illus.). 235 Cerium-hydrogen. phase diagram
(tllus.).234 Cesium. on gallium arsenide.
epitaxial growth mode I. 164 Cesium iodide. fiber crystal arrays.
light-guiding applications. 298
Chalcogenides. in binary II - VI semiconductor compounds. 335-344
Characterizations. crystallization in geological
processes. 254-256 kaolin microtopographic. 258-259 mixed suspension mixed product
removal crystallizer. 218-219 product characteristics. 223-224 quartz. 257-259 solution growth. 254-256
Chemical beam epitaxy. techniques. 304
Chemical potential. size dependent. 30-31 size independent. 29-30
Chemical vapor deposition. (illus.). 107-108. 112-113 preparation of pure silicon. 319 semiconductors. 327-332
Chemical vapor transport. closed-tube arrangement (illus.).
344 growth parameters. 344 (illus.). 107-108. 111 for single crystals. 342-343
Chloride vapor phase epitaxy. 310 Chlorite. microtopographic
characterizations. 258-259 Closed-tube techniques.
II - VI compounds. 339-344 sublimation (illus.). 341
Clusters. crystalline. capillarity
approximation. 39-40 edges and corners. effects. 39 equilibrium distribution. 35-39
size function neil. (illus.). 36
heterophase equilibrium with vapor. 35
i-molecular tetrahedral. excess vibrational energy (illus.). 40
large. excess vibrational energy (tllus.). 40
liquid. excess free energy (tllus.). 41
surface free energy. 39-40 see also Nucleation
Coincidence lattice. epitaxial growth mode I. 163 (tllus.). 149 twinning. 186
Coincidence nodes. Vernier-Nonius (tllus.). 148
Columnar dendritic growth. 86 Continuous process crystallization.
218-220 Convection.
effects. inclusion in transport equations. 75-76
influence on diffusion layer. scaling law analysis. 78-81 segregation of impurity or
dopant. 81-86 Copper. Gibbs free energy vs
fraction of surface sites occupied. 116
Copper sulphide. polytypes. 199 Coriell's model. bulk convection. 98 Crucibles.
accelerated crucible rotation technique. 140
platin. for LPE (illus.). 402 Crystal chemistry.
applications. 225-226 gel growth. 228-229 solution growth based on
temperature difference procedures. 226-228
zone fusion. 228 Crystal defects.
striations. 141 see also Dislocations; IncluSions
Crystal face. growth kinetics of kinked K-faces.
54-55 kink-sites. 53. 54-55 maximum growth rate. 57 structure (illus.). 51 surface sites. 53 three types (illus.). 51
Crystal growth. basic principles. bibliography.
411-412 bulk methods. 227 cracks. 127 and crystal chemistry. 225-229 dendritic see Dendritic growth dislocations see Dislocations equilibrium shape. 54 eutectic growth. 76-77 face growth vs face area (illus.).
124 factors depending on crystal
structure. 49 factors depending on mother phase.
49 flux growth. 133-141 from solutions.
constitutional supercooling (illus.). 125-126
impurity effects and incorporation. 128-129
inclusions. 124-128 kinetics and morphology.
119-124 morphological instability.
124-128 producing supersaturated
solutions. 130 seeding. 129-130 stirring. 130-131 technology. 129-131
from vapors. 107-117 advantages. 107 diffusionless' technique
(illus.). 111-112 drawbacks. 108 interface structure and atomic
roughness. 113-117 macroscopic transport. 109-113 Soret diffusion (illus.).
113-114 general treatises. bibliography.
412 growth kinetics of flat F-faces.
55-56 growth kinetics of K-faces. 54-55 growth mechanism of defective F
faces. 58-65 growth mechanism of perfect F
faces. 56-58 growth rate.
flux evaporation. equation. 137 gradient transport. equation.
137 maximum. hypothesis. 171-172 maximum stable. 136 slow cooling. equation. 137
hydrodynamics. 205-214
419
Crystal growth (continued) impurities. 128-129 inclusions. 124-128 inorganic crystals and polytypism.
197-202 mass transfer. 120-122 mechanisms.
from growth isotherms. 65-66 summarized (illus.). 50
microscopic aspects. Jackson's model. 70-72 kinetic growth. 72-74 Mutaftschiev's model. 70-72 planar front solidification.
74-78 structural approach. 70-72
morphology. face growth vs face area (illus.). 124
polymers. 267-273 relative growth rate. formula. 52 review of history. bibliography.
411 ripening. 77-78 in solid state physics. 231-237 special materials. bibliography.
412-413 special methods. bibliography. 412 spiral. 58-65 step train (illus.). 123 surface integration rate. 119.
121-122 surveys of activities.
bibliography. 415 transparent solutions. 205-214 volume diffusion as rate
determining step. 64-65 widely spaced steps. 123 see also Dendritic growth; Melt
growth; Shaped crystals; Solution
growth Crystal twinning see Twinning Crystal-vapour equilibrium.
atomistic treatment. 52-53 phenomenological treatment. 53-54
Crystallization. biological molecules. 239-248 industrial. 217-224
bibliography. 414 lamellar (illus.). 268 proteins. 239-248
Crystals. cubic. isotropic. 160 homodesmic/heterodesmic. 160 infinite. phase equilibrium. 28
Curie-Wolff condition. equation. 34 CVD see Chemical vapor deposition CZ see Czochralski Czochralski growth.
heat balance (illus.). 326 potassium chloride. 296 silicon crystal. 296
Czochralski method.
420
gallium arsenide. 350-352 liquid encapsulated Czochralski
(LEC). 351-352 solidification. 83
Czochralski pulling. silicon. 325-327
Dacite. banded. dynamic crystallization processes. 261
Darcy's Law of viscous flow. 86 Dauphin~ twinning (illus.). 257 Dendritic growth.
dynamic theory. 172-174 influence of solid-liquid
interface. 170-172 isothermal (Ivantsov). 171 Ivantsov's transport solution
(illus.). 168-170 marginal perturbation. wavelength
and dendrite tip radius. 172-173
maximum growth rate hypothesis. 171-172
morphological stability and time dependence. 172-174
non-isothermal. 170-171 scaling laws and observations.
174-178 solute dendrites. 178-182 steady-state. 167-168
Dendritic structures. 86 Dendritic web process.
schematic depiction. 284-285 silicon ribbon growth. 284-285
Diads. defined. 190 Diamond. characterization. 256-257 Diffusion.
Fickian. 113 thermal. 113
Diffusion equation. steady-state solutions. 110
'Diffusion haloes'. nucleation. 42 Diffusion layer.
and convection. scaling law analysis. 78-81 segregation of impurity or
dopant. 81-86 Dimethylarsine. 312 Diodes. high performance. 327-328 Diopside. metastable nucleation. 264 Dislocations.
edge. 391 flux grown crystals. 141 means to reduce density. 355 misfit. and thermal expansion.
molecular beam epitaxy. 391-392
reduction processes. III - V compounds. 354-355
removal in silicon. 325 Disorder theory. polytypes. 197 Dispersion relation.
defined. 90 Mullins and Sekerka model. 90
Domain walls vs permissible walls. 190
Dopants. concentration control. 380 detwinning. 193
Dopants (continued) incorporation into GaAs compounds.
375-380 modulation doping.
(illus.). 384 maximum mobilities attained.
(illus.). 385 superlattices. 383-386
n-type. 377-378 one beam interferometry. 208 p-type. 376-377 segregation. 81-86 transient doping profiles. 378-380 and vapor growth processes. 109
Drowning out. 220 Dupr~'srelation. 152
Edge-defined film growth process. growth. sapphire. 278 shaped crystals. 278-282 and Stepanov processes (illus.).
silicon ribbon growth. 279-282
Edge-defined film growth process dies.
influence of design on liquid flow (illus.). 282
interface shapes (illus.). 280 EFG see Edge-defined film growth
process Einstein's formula. 60 Electron diffraction. reflection
high energy see RHEED Elliptical mirror cavity. lamp
heated. 228 Encapsulated methods. 351-352 Enstatite. metastable nucleation.
264 Entropy. thermodynamic equilibria.
4-7 Epitaxy.
defined. 147 extreme growth modes.
I (Frank-van der Merwe mode). 161. 163-164
II (Stranski-Krastanov mode), 162. 164-165
III (Volmer-Weber mode). 162-163
geometrical laws. 143-151 historical background. 143-151 organometallic vapor phase.
303-314 thermodynamics. 151-164
Eutectic growth. plot of interface undercooling
(illus.). 76 regular/irregular structures.
76-77 Eutectic solidification. 86 Evaporation. industrial
crystallization. 220-221 Ewald sphere (illus.). 371-372
Ferrobielastic switching. 192 Ferroelastoelectrics. 192 Ferroelectric transitions. 193
Ferroelectrics. 191 Ferroic phases. table. 189 Fiber crystals.
conservation of energy. equation. 292
conservation of mass. equation. 292
grown by LHPG method. 293 line defects. 297 meniscus-controlled process.
steady-state growth requirements. 292
shape stability. equation. 293 single. 289-298 whiskers. 296
vapor-liquid-solid growth. 298-300
Fiber growth techniques. capillary drawing (illus.). 291 pedestal growth method. 290-291.
292 pressurized capillary-fed growth
(illus.). 291 Film stoichemistry. molecular beam
epitaxy. 365-368 Float-zone method. fiber growth
techniques. 290. 292 Floating orifice. technique
(illus.). 278 Fluorides. grown by LHPG method. 293 Flux growth.
choice of flux. 134-135 crystal defects. 140-141 defined. 133 experimental techniques. 137-140 mechanisms. 135-137
Forsterite. metastable nucleation. 264
Frank-van der Merwe mode. epitaxial growth. 161. 163-164
Frenkel disorder. 336
Gadolinium gallium garnet. melt composition. 399-400 substrate for YIG. 398
Gallium. GalnPAs system. lattice constant vs bandgap (illus.). 369
Gallium arsenide. 2T-HB. 3T-HB and GF methods
(illus.). 350 applications. 348 arsenic on. desorbed pulse shapes
(illus.). 366 comparison of LEC and HB. 352 CVD growth (illus.). 114 Czochralski method. 350-352 deuterium tracer experiments. 307 evolution of surface coverage.
monolayer growth (illus.). 376
growth of solid (illus.). 22-23 homoepitaxial growth. 303 lattice-matched heterojunctions.
382 mobilities. 310
421
Gallium arsenide (continued) model for growth from Ga and As
(ill us. ). 367 modulation doping. maximum
mobilities attained. (ill us. ). 385
molecular beam epitaxy. 359-370 properties. LEC method. 351 semiconductors. grown by various
techniques. 310 solar cells. 303 strained layer epitaxy. 386-392 surface ordering. 373-374 two-phase equilibria (illus.).
13-14 typical specifications. 349 whiskers (illus.). 299-300
Gallium indium arsenide. mobilities. 310
Gallium nitride. applications. 348 Gallium phosphide.
applications. 348 properties. LEC method. 351
Gallium-antimony. applications. 348 properties. LEC method. 351
Garnets. Arrhenius plot (illus.). weight vs
temperature. 20 crystal chemistry (illus.). 398 epitaxy conditions and misfit
(illus.). 399 general formula. 19 growth kinetics. 403-407 growth procedure. 400-403 liquid phase epitaxy. 397-407
summary. 407 magneto-optical switching layers.
407 melt composition. 399-400 thermal expansion coefficients.
398 Gas. ideal. phase equilibrium. 27-28 Gas bubbles. in inclusions. 128 Gel growth of crystals. techniques.
228-229 Geological processes. nucleation.
262 Geosciences.
applications in crystal growth (illus.). 253-254
crystallization. 254-256 Germanium.
bond configurations. single height atomic steps (illus.). 390
Ge/Ga. segregation parameter values. 85
GelSi epitaxial layers. maintenance on Si and Ge substrates
(illus.).388 GelSi strained layer superlattice
(illus.). 388 n-type dopant. 377-378. 379 zone melting. 317-318
GGC theory (Gilmer. Ghez and Cabrera). 63-64
422
GGG see Gadolinium gallium garnet Gibbs.
minimum principle. 7 thermodynamics. 2-4
Gibbs free energy. dW. 30 i-sized clusters (illus.). 33 variation dG. 29 vs fraction of surface sites
occupied. copper and lead (illus.). 116
Gibbs free energy density. 8 Gibbs function.
classical secondary nucleus. 271 polymer nucleation. 269
Gibbs-Duhem relation. equations. 2. 8 and phase rules. 9-·12
Gibbs-Thomson effects. Ostwald's formula. 16
Gibbs-Thomson formula. anisotropic clusters. 34 defining critical nucleus. 37 non-isothermal dendritic growth.
170 . Gibbs-Wulff theorem. 2-D crystals.
54 Gold-silicon alloy. fiber crystal
whiskers (illus.). 298 Grashof numbers Gr. 111 Gravity. unit. in space experiments.
244-248 Growth and dissolution processes.
simulation. 22
Halides. alizarine crystals. 147 epitaxy. 145-146 flux systems. 134
Hall effect. 383 HB (Horizontal Bridgman) see
Bridgman methods Heat and solute transport. 75-76 Helmholtz free energy. variation. 30 Hematite. formation. 20 Hennenberg's model. bulk convection.
98 Henry's Law. adsorption isotherm.
154-155 High electron mobility transistor
(HEMT). 383 Holographic interferometry.
apparatus. 206 defined. 205 multidirectional. 209-214 one beam. 206-209
Holography. applications in crystals from transparent solutions. 205
Hydrides. light rare-earth. metal semi
conductor transitions. 233. 235-237
vapor phase epitaxy. 310 Hydrodynamics. crystal growth.
205-214
Hydrogen. pressure vs coverage with monatomic H. 332
Ice/water. dendritic growth. 174-178 II - VI compounds.
electrical properties. 335-336 growth technology. 337-344 lattice structure. 335 melting points. 337 open-tube/closed-tube techniques.
339-344 phase relationships. 336-337 technology of growth. 335-344
II - VI elements. ternary systems. 21-23
III - V compounds. application of magnetic fields.
355 automated puller. LEe growth
(illus.). 353 Bridgman methods of GaAs growth.
349-350 crystal preparation. 347-352 dislocation reduction processes.
354-355 preparation of semi-insulating
gallium arsenide. 353-354 purification of raw materials.
352-353 III - V elements. ternary systems.
21-23 III - V semiconductor growth see
Organometallic vapor phase epitaxy
Images. reconstruction from project10ns. 209
Impurities. effects. 223 Inclusions.
characteristics. 127-128 conditions for formation. 124-125 mechanisms. 126-127 movements. 128
Indium arsenide. applications. 348 properties. LEe method. 351
Indium nitride. applications. 348 Indium phosphide.
applications. 348 mobilities. 310 OMVPE growth. supersaturation. 306 OMVPE growth (illus.). 305 properties. LEe method. 351
Indium-antimony. applications. 348 Indium-containing III/V alloys.
303-304 Indium-germanium alloy. in p-n
junctions (illus.). 318 Induced striation method (ISM).
136-137 Industrial crystallization.
batch crystallizers. 220-221 bibliography. 414 continuous process. 218-220 objectives. 217 physical chemistry. 221-223 product characteristics. 223-224 secondary nucleation. 221-222
Integrated circuit (illus.). 320 Interface.
and boundary layer. OMVPE. 304 exchange energy. in epitaxy. 158 melt-solid.
effect of convective flow (illus.). 322
silicon. 321 solid-liquid. dendritic growth.
170-172 see also Solidification front
Interface abruptness. OMVPE. 311 organometallic vapor phase
epitaxy. 311 Interface shapes. EFG dies. 280 International meetings. proceedings.
414 Iron. epitaxial growth on gold. 150 Isobutylphosphine. 312 Ivantsov's transport solution.
dendritic growth (illus.). 168-170 log-log plot (illus.). 170 velocity vs tip radius (illus.).
169. 171
Jackson's model. free energy of liquid/interface/solid system (illus.). 71
J(n*) formulation. 57
Kaolin. microtopographic characterizations. 258-259
Kossel • constant-bond' approach. 115 Kossel crystal.
adatoms occupying lattice. 113 atomic roughness. 113 substrate. epitaxy. 154
Lagrange multipliers. 5 Lamellar crystallization (illus.).
268 Langmuir adsorption isotherm. in
epitaxy. 155. 159 Lanthanum-hydrogen. phase diagram
(illus.). 234 Laplace's capillary equations. 276 Laplace's Law. 11-12 Laser heating.
and crystal growth. 292-293 pedestal fiber growth.
miniature molten zone. 295 representative list of
crystals. 293 Lasers.
GaAs/A1GaAs. 304 quantum well. 304
Lattice constant. rare earth iron garnets. 398 vs bandgap. GaInPAs system
(illus.). 369 Lattice mismatched epitaxy (illus.).
387 Lattices.
angular misfit and screw coincidence (illus.). 150
423
Lattices (continued) coincidence see. Coincidence
lattice superlattices.
compositional. 381-382 defined. 380 doping. defined. 382 modulation doping. 383-386 modulation doping (illus.). 384 TEM (illus.). 384
Lavas. dynamic crystallization processes. 259-262
Lead. compounds. flux systems. 134 on germanium. epitaxial growth
mode II. 164 Gibbs free energy vs fraction of
surface sites occupied. 116 on silicon. epitaxial growth mode
II. 164 Lead-tellurium. properties. LEC
method. 351 Lead-tin alloy.
gradient rate product. 100 interface. 99 interface structures sequence
(illus.). 100 morphological instability
(illus.). 97 Legendre transformations. 8 Lepidolites. polytypes. 200 Liquid clusters. excess free energy.
Monte Carlo simulation (illus.).4l
Liquid drops. capillarity approximation. 40-42
Liquid encapsulated Czochralski (LEC).
examples. 351 principle (illus.). 351 semiconductor crystal growth.
351-352 Liquid phase epitaxy.
apparatus (illus.). 400 garnets. 397-407
substrates. 397-398 growth rate dependence of
supersaturation (illus.). 406 III - V semiconductors. 310
Lithionites. polytypes. 200 Lithium-containing crystals.
grown by LHPG method. 293 growth stability vs diameter
requction ratio (illus.). 295 Low energy electron diffraction
, (LEED). 371 LPE see Liquid phase epitaxy
Mach-Zehnder interferometry. 261 Magmatic crystallization. 263 Magnetic fields. applications. III -
V compounds. 355 Magneto-plumbite. formation. 20 Manganese. p-type dopant. 377 Marangoni flow. 323 MBE see Molecular beam epitaxy Melt column. Stepanov's method. 277
424
Melt composition. induced striation method (ISM). 136-137
Melt growth. diffusion layer. influence of
convection. 78-86 II - VI compounds. 337-339 microscopic aspects. 70-78 shaped crystals. 282 solidification. 69-70 solidification front.
morphological stability. 86-103
techniques. 290-291 see also Crystal growth
Melt-solid interface. effect of convective flow (illus.). 322-323
Melting. bulk melting. 117 Meniscus-controlled processes.
equations. 283-284 shaped crystals. 283
Metal semi-conductor transitions. 235-237
solid solutions of rare earth hydrides. 233-235
Methods and technology see Apparatus; Techniques
Micas. polytypes. 200 Mirror cavity. elliptical. 228 Mixed suspension mixed product
removal crystallizer (MSMPR). 218-219
Moire patterns. new dislocations. 161
Molecular beam epitaxy. . alloy .growth. 368 antiphase disorder. 389-391 conversion to OMVPE. 304 defined. 359 dopant incorporation.
dopant concentration control. 380
shallow acceptors. 376-377 shallow donors. 377-378 transient doping profiles.
378-380 unintentional impurities.
375-376 film stoichemistry. 365-368 GaAs on Si heteroepitaxy. 389 gas source. defined. 360 growth process. 362-365 misfit dislocations and thermal
expansion. 391-392 principles of crystal growth.
359-370 silicon epitaxy. 368-370 solid source (conventional).
defined. 360 (illus.).36l
strained layer epitaxy. 384-389 summary of prinCipal features.
392-394 superlattices and quantum wells.
380-384 surface studies.
overview. 370-371
Molecular beam epitaxy (continued) surface studies (continued)
RHEED pattern formation. 371-373
RHEED pattern intensity oscillations. 374-375
surface ordering. 373-374 typical pressures during growth.
362 Molten salts and oxides see Flux
growth Molybdates. flux systems. 134 Molybdenum. growth of sapphire. 279 Monte Carlo simulation. excess free
energy of liquid clusters (i11us.). 41
Mossbauer spectroscopy. 236 MSMPR crystallizer see Mixed
suspension mixed product removal crystallizer
Muscovite. nucleation. 262 polytypes. 199
Mutaftschiev's model. free energy of liquid/interface/solid system (i11us.). 71
N-type dopants. 377-378 Neodymium YAG. grown by LHPG method.
293 Newsletters (national). 414-415 Nickel. cubic isotropic crystals.
160 meta-Nitroaniline. capillary growth.
298 No-slip condition. vs 'stagnant
film' concept (i11us.). 120 Nucleation.
2-D 'polymers'. 56-58 activation energy.
and equilibrium shape. 34 formula. 263
chemical concept. capillarity approximation. 29.
39-42 equilibrium distribution of
clusters. 34-39 defined. 27 'diffusion haloes'. 42 geological processes. 262 growth. 2-D (i11us.). 260-261 homogeneous nucleation kinetics.
steady state. 42-45 time lag in nucleation. 45-47
metastable. 263-264 phase concept.
equilibrium shape. 33-34 saturated state. 27-28 supersaturated state. 28-33
scaled steady state nucleation rate (i11us.). 47
steady state. 42-45 time lag. 45-47 work. 31-33
Numbers see Grashof; Peclet; Schmidt
OMVPE see Organometallic vapor phase epitaxy
Onsager solution. 113 Open-tube techniques. II - VI
compounds. 339-340 Organic crystals. see also Protein Organic nonlinear optic crystals. in
capillaries. 298 Organometallic vapor phase epitaxy.
applications. 313 chemical potential vs reaction
coordinate. 306 hydrodynamics and mass transport.
303-309 interface abruptness. 311 purity of product. 309-310 safety. 311-312 summary. 313-314 versatility. 310
Orientational domain states. 188-189 Orthoferrite. formation. 20 Ostwald ripening. in geological
processes. 259 Ostwald's formula. Gibbs-Thomson
effects. 16 Overgrowth. regular (i11us.).
143-144
p-n junctions. alloying technique (i11us.). 318
P-type dopants. 376-377 Palladium. on tungsten. epitaxial
growth mode II. 164 Paraffins. chainfolding. 272 Peclet number Pe. 92. 169
equation. 170 and Ivantsov model. 171 low. alloys. 180-181 and supercooling. 173
Pedestal growth method. fiber growth techniques. 290-291. 292. 294
Periodicals. bibliography. 414 Perovskite. metastable nucleation.
264 PET (Polyethylene terephthalate).
268 Phase. defined. 4 Phase boundary. defined. 4 Phase concept of nucleation. 27-34 Phase diagrams.
bibliography. 411 binary systems. applications.
12-17 cerium-hydrogen. 234 lanthanum-hydrogen. 234 yttrium iron garnet (YIG). 19
Phase dissociation. suppression. 233 Phase equilibria. a theoretical
view. 1-23 Phase transitions.
polymorphic. industrial crystallization. 222
see also Structural phase transitions
Phosphine. pyrolysis in deuterium. 307-308 safety considerations. 311-312
425
Physical Vapor Deposition (PVD) (illus.). 107-108. 112-113
Physical Vapor Transport (PVT) (illus.). 107-108. 110. 110-111
temperature profiles (illus.). 111 Piezoelectric coefficients. 189 Pivalic acid. dendritic growth.
174-178 Poisson ratio. 158 Poling process. 192 Polyethylene.
lamella growth from melt (illus.). 272
spherulite growth (illus.). 271 Polyethylene terephthalate. 268 Polymers.
crystal growth. 267-273 defined. 267 electroactive properties. 273 fringed micelle model. 268 regular chainfolding (illus.). 268 thickness of lamellae. 269
Polytypes. axial next nearest neighbour Ising
(ANNNI). 198 basic structures. 198-200
growth mechanisms. 200-201 complex polytypes. 198-200
disloc,ation- guided solid- state transformations. 202
growth mechanisms. 201-202 controlled production. 202 disorder theory. 197 perfect matrix model. 201 rate of crystallization. 200 screw dislocation theory. 201 short-period/long-period. 198 stoichemistry. 199-200
Polytypism. defined. 197 Porin. isolation. 243 Potassium chloride.
Czochralski growth. 296 dislocation density vs diameter
(i11us.). 297 Proceedings. international meetings.
414 Products.
characteristics. 223-224 common. number of polymorphs or
hydrates. 222 Projection measurement geometry
(illus.). 212 Protein crystal growth.
recent advances. 243-244 space experiments. 244-248
Protein crystallography. current techniques. 241-242 major problems. 242-243 recent advances. 240-241
PVA see Pivalic acid
Q. equations. 3-4 Qrep' replacement partition function.
38. 41
426
Quantum wells. 380-383 single. layer deposition sequence
(illus.). 385 Quartz. characterization. 257-259
Rare earth iron garnets. lattice constants. 398 liquid phase epitaxy. 397-407
Rare-earth hydrides. metal semi-conductor transitions.
233. 235-237 phase relationships (illus.).
235-236 Reactive sintering in closed
ampoule. techniques. 229 Reflection high energy electron
diffraction see RHEED Replacement partition function. Qrep'
38. 41 RHEED pattern intenSity
oscillations. 374-375 during growth (illus.). 374-375 GaAs surface (illus.). 373
Rhodopseudomonas. photoreaction center. 243
Royer's misfit laws. 162. 163 Rutile see Titanium dioxide
Salting out. 220 Sapphire.
EFG growth. 278 growth stability vs diameter
reduction ratio (illus.). 295 Saturation pressure. Pe. 52 Scaling law analysis. 78-81 Schlieren photograph. triglycin
sulfate. 244 Schmidt number Sc. 94 Schottky surface barrier. 384 Schottky-Wagner disorder. 337 Screw dislocation theory. polytypes.
201 Secondary ion mass spectroscopy. 404 Seeding.
in flux growth. 138-139 growth from solutions. 129-130
Semi-conductor/metal transitions. 235-237
Semi-metals. interface. 99 Semiconductor epitaxial growth
techniques see Organometallic vapor phase epitaxy
Semiconductors. binary. 335-344. 347-356 elementary. 317-332 grown by various techniques. 310 II - VI compounds. 335-344 III - V compounds., 347- 356 silicon. 317-332 single crystals. 342-344 ternary alloys.
separated source' method (illus.). 342
source-temperature increasing method (illus.). 343
Sericite. microtopographic characterizations. 258-259
Shaped crystals. applications. 275 commercial processes. 282-284 edge-defined film growth process.
278-282 melt growth. 282-283 organic nonlinear optic. in
capillaries. 298 silicon ribbon growth. 284-288 single.
fibers. 289-297 unidirectional casting. 288-289
Stepanov method. 276-278 vapor-liquid-solid mechanism.
298-300 Siemens process. silicon. 318 Silane.
equilibrium composition vs temperature (illus.). 329
growth of silica (illus.). 328 isoconcentration lines. numerical
results (illus.). 113-114 Silica glass. nucleation of
crystals. time lag (illus.). 47
Silicates. nucleation. 262-263 Silicon.
bond configurations. single height atomic steps (illus.). 390
crystal microdefects. 297 Czochralski growth. 296 dimer formation (illus.). 331 epitaxy. molecular beam epitaxy.
368-370 equilibrium composition vs
temperature (illus.). 329 growth from silane (illus.). 328.
329 impurity. solidus-liquidus
(illus.). 323 melt. diffusivities. 109 n-type dopant. 377-378 planar technology (illus.).
319-320 preparation of pure silicon by
CVD. 319 production. 317 ribbon growth.
dendritic web process. 284-285 EFG and Stepanov processes
(illus.). 279-282 ribbon against drop,method
(illus.). 286 shaped crystals. 284-288 silicon on ceramic process
(illus.). 286 semiconductors. 317-332 Siemens process. 318 surface coverage during crystal
growth (illus.). 331 whiskers. vapor-liquid-solid
growth. 299-300 Silicon carbide.
polytype crystals. 199 solid-state transformations. 201
Silicon dioxide. characterization. 257-259
Silver. on germanium. epitaxial growth
mode II. 164 on molybdenum. epitaxial growth
mode II. 164 on silicon. epitaxial growth mode
II. 164 Silver sulphide. polytypes. 199 Silver-copper alloy. restabilization
rates. 101-102 SIMS see Secondary ion mass
spectroscopy Single crystals.
fibers. shaped crystals. 289-297 semiconductors. 342-344
Sodium. on tungsten. epitaxial growth mode I. 163-164
Sodium chlorate. holographic experiments. 214 thermostic cell. 207
Solid state physics. controlling valence fluctuations.
235-237 metal semi-conductor transitions.
mixed-crystal series. 233-235 research and crystal growth.
231-232 Solid/liquid interface. Wilson and
Frenkel model (illus.). 73 Solidification.
absence of gravity. 74-78 analysis of main experimental
results. 98-99 Bridgman-type (illus.). 82. 85 Czochralski method. 83 dendritic front. 81 diffusion layer. 80-81 eutectic front. 81. 86 importance. 69-70 interval. 88 kinetic effects. 102 morphological destabilization.
99-100 planar front. 81
absence of convection. 74-78 rate. growth rate vs temperature
(illus.). 290 segregation models (illus.). 83.
84 Solidification front.
boundary layer assumptions (illus.). 93
chemical undercooling (illus.). 88 double diffusion ahead (illus.).
96 driving forces. 87-88 morphological stability. 86-103
absence of convective instabilities. 88-92
presence of convective instabilities. 92-98
mushy zone configurations (illus.). 87
perturbations. amplitude equation. 92 first stable (illus.). 95. 97 linear ana1ysi$. 89-90
427
Solidification front (continued) perturbations (continued)
nonlinear analysis. 90-92 sinusoidal (illus.). 89 three critical patterns
(illus.). 94-94 undercooling. 93
Solute dendrites see Dendritic growth. solute dendrites
Solute and heat flow. 75-76 Solution growth.
based on temperature difference procedures. 226-228
generalized features. (illus.). 255
impurity effects and incorporation. 128-129
kinetics and morphology. 119-124 morphological instability. 124-128 multicomponent growth. 122-123 solute concentration vs distance
into solution (illus.). 120 stirring and concentration
gradient. 121-122 surface integration and mass
transfer (illus.). 121-122 technology. 129-131 transparent solutions. 205-214 vs melt and vapor growth. 254-256
Solvent chemistry. bibliography. 411 Solvents. in flux growth. 133 Soret diffusion (illus.). 113-114 Space experiments. protein crystal
growth. 244-248 Sphalerite to wurtzite. polytypes.
199 Spiral crystalline growth. 58-65
activation energy. 58 diffusion paths (illus.). 61 (illus.). 260-261 pattern (illus.). 60 rate-determining step: Chernov's
model (illus.). 64-65 rate-determining step: GGC theory.
63-64 surface diffusion to the steps:
BCF theory. 60-62 SPT see Structural phase transitions 'Stagnant film' concept. vs no-slip
condition. 120 'Stefan problem'. 21 Stepanov processes.
shaped crystals. 276-278 silicon ribbon growth. 279-282.
284 Stirling's formula. 154 Stirring. 130-131
accelerated crucible rotation technique. 140
flux growth. 140 Strained layers.
epitaxy. 386-392 molecular 'beam epitaxy. 384-389
Strains. flux grown crystals. 141 Stranski-Krastanov mode. epitaxial
growth. 162. 164-165
428
Striations. crystal defects. 141 induced striation method (ISM).
136-137 Structural phase transitions.
equitranslational. 188-189 examples. 191 ferroelastic. planar phase
boundary. 191 single-domain. 192
Succinonitrile. dendritic growth. 174-178
Succinonitrile-acetone alloys. 181-182
Sucrose crystal. growth rate vs supersaturation
(illus.).210 multidirectional interferometry
(illus.).211 one beam interferometry. 207-209
Supercooling. classical model (illus.). 125-126
Supersaturated state. 'chemical work'. 28 free energy of small condensed
phase. 28-31 nucleation work. 31-33
Surface free energy. clusters. 39-40 Surface tension. very small clusters
(foot:not:e). 30 Surface thermodynamics. 10-12 Surveys of activities. bibliography.
415
Techniques. Bridgman methods of GaAs growth.
349-350 calorimetry. polymer nucleation.
270 casting turbine blades. 288-289 chemical beam epitaxy. 304 chemical vapor deposition.
semiconductors. 327-332 chemical vapor transport. II - VI
compounds. 342-344 crystal growth from solutions.
129-131 Czochralski method. gallium
arsenide. 350-352 Czochralski pulling of silicon
(illus.). 325-327 decoration. electron microscopy.
258-259 dopant incorporation into GaAs
compounds. 375-380 elliptical mirror cavity. lamp
heated. 228 float-zone method. 290. 292 flux growth. 138-139 gel growth of crystals. 228-229 generating supersaturation.
137-138 heat balance in Czochralski
growth. 326 horizontal ribbon growth (illus.).
287-288
Techniques (continued) II - VI semiconductor compounds.
335-344 in-situ observation. 262-264 laser-heated float-zone. 287 liquid encapsulated Czochralski
(LEC). 351 liquid phase epitaxy of garnets.
397-407 Mach-Zehnder interferometry. 261 melt growth. 290-291 molecular beam epitaxy. 359-370 open-tube. closed-tube. for II -
VI compounds. 339-344 organometallic vapor phase
epitaxy. 303-314 p-n junctions (illus.). 318 protein crystal growth. 241-244 protein crystallography. 241-242 reactive sintering in closed
ampoule. 229 removal of dislocations n silicon.
325 ribbon to ribbon growth. 287 Schlieren. 261 semiconductor epitaxial growth.
304 shaped crystals. 276-277 silicon deposition. 319 silicon planar technology
(illus.). 319-320 solution growth based on
temperature difference procedures. 226-228
space experiments in biological molecule growth. 244-248
synchrotron radiation surfaces. 240-241
thermogravimetry to measure supercooling. 136-137
transmission electron micrography for mode III epitaxy. 162-163
zone melting of germanium. 318 Temperature difference procedures.
226-228 Thermodynamics.
bibliography. 411 degrees of freedom. 10 equilibria.
consequences. 7-9 entropy. 4-7 minimum principle. 4
first principle. 5-6. 13 Gibbs. 2-4 Gibbs-Duhem relation.
equations. 2. 8 and phase rules. 9-12
supersaturation. defined. 52 surface. 10-12 systems. variables and phases. 3-4 ternary systems. 17-19
composition triangle (illus.). 18
garnets. 19-20 III-V elements. 21-23
two-phase system and boundary (illus.). 11
Thermogravimetry to measure supercooling. 136-137
Thermostatic cell (illus.). 207 Thomson-Gibbs formula see Gibbs
Thomson formula Ti-peroxene. metastable nucleation.
264 Time lag. nucleation. 45-47 Tin/silver. segregation parameter
values. 85 Titanium:aluminium oxide. grown by
LHPG method. 293 TMln see Trimethylindium TmSe. crystal growth. 236-237 Transformation twinning. 185.
188-193 Transistors.
2-D electron gas effect transistor (HEMT). 383
high electron mobility transistor (HEMT). 383
Transparent solutions. crystal growth. 205-214
Travelling solvent method. ZnTe (illus.).339
Triethy1indium. adduct formation. 303
Triethy1phosphine. 312 Trig1ycin sulfate. Schlieren
photograph. 244 Trimethy1arsenic. 312 Trimethy1indium.
OMVPE growth (illus.). 305 organometallic vapor phase
epitaxy. 303-304 and phosphine. 308 purity. 309-310 pyrolysis in deuterium. 307-308
Trimethy1phosphine. 312 Turbine blades. casting. 288-289 Twinning.
classification. by merohedry. 186 by pseudomerohedry. 186 by reticular merohedry. 186 by reticular pseudomerohedry.
186 Dauphin~ (illus.). 257 defined. 185 detwinning. 192-193 growth. 185 growth conditions. 187 inversion. 186 lamellar. 186 mechanical. 185
plastic shear deformation. 188 mimetic. 186 natural/artificial. 191-192 orientationa1 domain states.
188-189 penetration. 186 po1ysynthetic. 186 refection or rotation. 186 186 and stacking faults. zinc
cha1cogenides. 339 transformation twinning.
defined. 185
429
Twinning (continued) transformation twinning
(continued) detwinning. 192-193 general laws. 188-191 production of. 191-192
twin plane. 186 twinning operation t. 186 twinning operations. orientation
of permissible walls ('table). 190
two or multi-component. 186
Valence fluctuations. control by varying non-stoichemistry of single crystals. 235-237
Van de Waall's bonds. weak. in heterodesmic.crystals. 160
Van de Waal1's crystals. epitaxial growth mode I. 163
Van de Waall's loop. 155 Vanadates. flux systems. 134 Vapor diffusion. protein crystal
growth. 242. 245 Vapor growth. open-tube techniques.
339-340 Vapor phase epitaxy. organometallic.
303-314 Vapor-liquid-solid mechanism. shaped
crystals. 298-300 Vapors.
crystal growth. interface structure and atomic
roughness. 113-117 introduction. 107-109 macroscopic transport. 109-113
equilibrium with crystal. finiTechniques. infinite size. 52
Vernier-Nonius. coincidence nodes (illus.). 148
VLS see Vapor-liquid-solid mechanism Volmer-Weber mode. epitaxial growth.
162-163
Wulf-Kaischew theorem. 153 Wulff theorem. surface tension and
face distances. 34. 152
Yttrium aluminium garnet (YAG). grown by LHPG method. 293 growth stability vs diameter
reduction ratio (illus.). 295 Yttrium iron garnet (YIG).
grown by LHPG method. 293 phase diagram. 19 SIMS profile (illus.). 404
Zinc. in binary II - VI semiconductor
compounds. 335-344 chalcogenides. twinning and
stacking faults. 339 ZnTe. travelling solvent method
(illus.). 339
430
Zinc sulphide. solid-state transformations. 201 sphalerite to wurtzite. 199
Zone melting. germanium. 317-318