Az 3300-f Photoresist

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AZ 3300-F Photoresist

Data Package

AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil areregistered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow,SWG, and TARP are trademarks of AZ Electronic Materials.

AZ 3300-F Photoresist AZ 3312-F AZ 3330-F

AZ 3300-F Photoresist

AZ 3312-F

Very fast resist

High resolution ( i-line 0.6µm, g-line 0.8µm)Excellent for contact holes, vias, implants, andnon critical gates

AZ 3330-F Great for pad layer applicationsCan be coated from 2.5 to 5µm

0 1000 2000 3000 4000 5000 6000 7000

i l m T

h i c k n e s s

[ µ m

AZ 3312-F AZ 3330-F

AZ 3300-F PhotoresistSpin Curves

Features & Benefits

Why AZ ® 3300 Cross-over Resist?

Global infrastructure to support yourworldwide business with expanding localsupport networks

⇒ Excellent Performance and Value inall our products and services⇒ Wide selection of solutions to yourproblems

Features & Benefits

Sensitivity to g , h , and i-line wavelengths◊

Process relatively insensitive to bake conditions,develop times, and develop temperatures

Compatible with inorganic and organic (w/ & w/o

surfactant) developers◊

Thermal stability to 125°

Good depth of focus, linearity, and photospeedfor crossover applications

Very high stability against particle generation

◊ Excellent value for performance

AZ 3312-F PhotoresistSuggested Process Conditions

⇒ Spray/Puddle Process: – Softbake 90° -110° C,

– 60 - 90 sec – Expose: g -line, h -line, i-line

stepper or broadbandexposure source

– Where necessary, PEB:110°C, 60 - 90 sec.

– Develop: AZ 300 MIFdeveloper, 60 sec. spray-puddle

⇒ Double Puddle Process: – Softbake 90° -110°C,

– 60 - 90 sec – Expose: g -line, h -line, i-

line stepper or broadbandexposure source

– Where necessary, PEB:110°C, 60 - 90 sec.

– Develop: AZ 917 MIFdeveloper, 52 sec. doublepuddle

AZ 3312-F PhotoresistOptical Parameters

Refractive Index

Bleached 365nm 405nm 435nmn 1.7006 1.6752 1.6611k 0.00805 0.00433 0.00331

Unbleachedn 1.7046 1.6872 1.6908

k 0.03251 0.03369 0.02028

AZ 3312-F PhotoresistOptical Parameters

Dill Parametersi-line: g-line:

A = 1.0870 (µm-1) A= 0.6750 (µm-1)B = 0.0700 (µm-1) B= 0.0150 (µm-1)C = 0.0260 (cm 2/mJ) C= 0.0188 (cm 2/mJ)

Cauchy Coefficients

A B CBleached 1.6217 0.01156 µm² 7.77E-07 µm 4

Unbleached 1.6200 0.00705 µm² 1.64E-03 µm 4

AZ 3312-F Photoresistg-line Swing Curve

0.950 1.000 1.050 1.100 1.150 1.200 1.250 1.300 1.350 1.400 1.450

Thickness ( m)

D o s e

( m J / c m

SB: 90°C, 60sec PEB 110°C, 60sec

AZ300MIF developer, spray puddle,60sec @ 23°C

AZ 3312-F Photoresisti-line Swing Curve

1.050 1.075 1.100 1.125 1.150 1.175 1.200 1.225 1.250 1.275 1.300 1.325 1.350

Thickness( m)

D o s e ( m J / c m

SB: 90°C, 60sec PEB 110°C, 60sec

AZ300MIF developer, spray puddle,60sec @ 23°C

AZ 3312-F PhotoresistWith AZ 300 MIF Developer

Nikon i-line Stepper

AZ 3312-F PhotoresistExposure Latitude for 0.6µm Dense Lines, FT = 1.184 µm

SB: 90°C, 60sec PEB 110°C, 60sec AZ 300MIFDeveloper, spray puddle, 60sec @ 23°C

Nikon 0.54 NA i-line

44 48 52 56 60 64 68 72 76 80

Exposure Dose [mJ/cm²]

M e a s u r e d

L i n e w i d t h [ µ m ]

Nominal: 62mJ/cm²Exposure Latitude: 28%

45 50 55 60 65 70 75 80 85

M e a s u r e d

Nominal Energy: 63mJ/cm²Exposure Latitude: 34%

50 55 60 65 70 75 80 85

M e a s u r e d

L i n e w i d t h [ µ m

Nominal Energy: 62 mJ/cm²Exposure Latitude: 35%

50 55 60 65 70 75 80 85

M e a s u r e d

Nominal Energy: 62mJ/cm²Exposure Latitude: 39%

50 55 60 65 70 75 80 85

M e a s u r e d

Nominal Energy: 64 mJ/cm²Exposure Latitude: 48%

0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10Nominal Linewidth [µm]

M e a s u r e d

L i n e w i d t h [ µ

AZ®3312-F, 61mJ/cm²

AZ 3312-F PhotoresistLinearity for Dense Lines, Focus = - 0.20 µm, FT = 1.188 µm

SB: 90°C, 60sec PEB 110°C, 60sec AZ 300MIFDeveloper, spray puddle, 60sec @23°C

AZ 3312-F PhotoresistBossung Curve; 0.7µm Dense Lines; FT = 1.18 µm

SB: 90°C, 60sec PEB 110°C, 60sec AZ 300MIFDeveloper, spray puddle,60sec @ 23°C

-2 -1.5 -1 -0.5 0 0.5 1 1.5

495255586164

677073767982

AZ 3312-F PhotoresistDOF 0.7µm Dense Lines, FT = 1.18 µm , 61 mJ/cm 2

+0.2µm 0.0µm -0.2µm -0.4µm

-0.6µm

-0.8µm-1.0µm-1.2µm-1.4µm

AZ 3312-F PhotoresistBossung Curve; 0.8µm Dense Lines, FT = 1.18 µm

-2 -1.5 -1 -0.5 0 0.5 1 1.5

46495255586164

677073767982

AZ 3312-F PhotoresistDOF 0.8µm Dense Lines, FT = 1.18 µm, 61 mJ/cm 2

-0.8µm-1.0µm-1.2µm-1.4µm

+0.2µm 0.0µm -0.2µm -0.4µm+0.4µm

-1.6µm

-0.6µm

-2 -1.5 -1 -0.5 0 0.5 1 1.5Focus

495255586164

677073767982

AZ 3312-F PhotoresistDOF 0.9µm Dense Lines, FT = 1.18 µm, 61 mJ/cm 2

-0.8µm-1.0µm-1.2µm-1.4µm-1.6µm

+0.2µm 0.0µm -0.2µm -0.4µm+0.4µm

-0.6µm

-2 -1.5 -1 -0.5 0 0.5 1 1.5

46495255586164677073767982

AZ 3312-F PhotoresistDOF 1.0µm Dense Lines, FT = 1.18 µ, 64 mJ/cm 2

-0.8µm-1.0µm-1.2µm-1.4µm-1.6µm

+0.2µm 0.0µm -0.2µm -0.4µm+0.4µm

-0.6µm

AZ 3312- F PhotoresistThermal Flow

No Bake 115°C 120°C 125°C 130°C

Processing Conditions:

Film Thickness: 1.188µmSoft bake: 90°C/60sec, PEB: 110°C/60sec

Nikon i-line stepper, 0.54NA, AZ 300MIF Developer, 60sec spray/puddle @23°C

10 µm

AZ 3330-F PhotoresistWith AZ 300 MIF Developer

ASML i-line Stepper

200 220 240 260 280 300

AZ 3330-F PhotoresistExposure Latitude for 1.50µm Dense Lines, FT = 2.99µm

Exposure (mJ/cm²)

249 mJ/cm²21% Exposure Latitude

s u r e

d C D ( µ m

SB : 110°C for 60sec contactExposure : ASML/250 i-line , Conventional NA=0.60 sigma=0.75PEB : 110°C for 60sec contact

Develop: AZ 300 MIF developer / Single puddle for 60 sec @ 23°C

AZ 3330-F PhotoresistExposure Latitude for 1.50 µm Dense Lines, FT = 2.99µm

200 mJ/cm² 210 mJ/cm² 220 mJ/cm² 230 mJ/cm² 240 mJ/cm²

300 mJ/cm² 290 mJ/cm² 280 mJ/cm² 270 mJ/cm² 260 mJ/cm²

250 mJ/cm²

0.5 0.75 1 1.25 1.5 1.75 2

AZ 3330-F PhotoresistLinearity for Dense Lines @ 250 mJ/cm², FT = 2.99µm

M e a s u r e

d C D ( µ m

Mask CD (µm)SB : 110°C for 60sec contactExposure : ASML/250 i-line , Conventional NA=0.60 sigma=0.75PEB : 110°C for 60sec contact

AZ 3330-F PhotoresistLinearity for Dense Lines, FT = 2.99µm

SB : 110°C for 60sec contactExposure : ASML/ 250 i-line , Conventional NA=0.60 sigma=0.75, 250mJ/cm²PEB : 110°C for 60sec contact

2.00 µm 1.80 µm 1.70 µm 1.60 µm 1.50 µm

0.80 µm 1.00 µm 1.10 µm 1.20 µm 1.30 µm

1.40 µm

-1.5 -1.25 -1 -0.75 -0.5 -0.25 0 0.25 0.5 0.75 1 1.25 1.5

Develop: AZ 300 MIF developer/ Single puddle for 60 sec @ 23°C

AZ 3330-F PhotoresistDOF for 1.50 µm Dense Lines, FT = 2.99µm

Focus (µm)

M e a s u r e

d C D ( µ m

AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are

AZ 3330-F PhotoresistDOF for 1.50 µm Dense Lines, FT = 2.99µm

1.00 µm 0.80 µm 0.60 µm 0.40 µm 0.20 µm

SB : 110°C for 60sec contactExposure : ASML/250 i-line , Conventional NA=0.60 sigma=0.75, 250mJ/cm²PEB : 110°C for 60sec contact

Develop: AZ 300 MIF Developer / Single puddle for 60 sec @ 23°C

-1.00 µm -0.80 µm -0.60 µm -0.40 µm -0.20 µm

0.00 µm

Az 3300-f Photoresist

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