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Dr. Fumio Kita MEMS & Imaging Sensors Grenoble, 25 th -27 th of September 2019 Merck Performance Materials Semiconductor Solutions Advanced Photoresists for the More-than-Moore Industry

Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone

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Page 1: Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone

Dr. Fumio Kita

MEMS & Imaging Sensors

Grenoble, 25th-27th of September 2019

Merck Performance Materials

Semiconductor Solutions

Advanced Photoresists for the More-than-Moore Industry

Page 2: Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone

2

The Semiconductor Industry

Market Segments Based on Device Types

PackagingLogicMemory

(DRAM & NAND)

MtM(More than Moore)

Hard Disks

MEMS Devices

RF Devices

Power Devices

Optoelectronic Devices

(Image Sensor, Laser, LED)

Page 3: Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0 20 40 60 80 100 120 140 160 180 200 220 240

3

Product Line-up

Merck i-line Resist Portfolio (Positive Tone)

Exposure (mJ/cm²)

Resolu

tio

n (

µm

)

6100

79003300ECI MIR701

MIR900F/T 1.0 um

8100

F/T 2.5 um

MIR703iHP

iHBF/T 0.75 um on BARC

GXRF/T 3.0 um

Different viscosity versions of a product type allow the adjustment of F/T within a wider range

Trade-OffResolution vs. Dose

Page 4: Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone

0.0

5.0

10.0

0 50 100 150 200 250 300 350 400

4

Product Line-up

Merck Lift-Off Resists Portfolio (Negative Tone)

Exposure (mJ/cm²)

0.0

0.2

0.4

0.6

0.8

1.0

0 20 40 60 80 100 120 140 160 180 200 220 240

Typ

ical

Min

imu

m

Featu

re (

µm

)R

esolu

tio

n (

µm

)

nLOF5500

nLOF2000

F/T 1.0 um

F/T 3.5 um

5200 IR F/T 2.0 um

LNRpLOF F/T 3.5 umF/T 12.0 um

nLOF K7000F/T 0.5 um

Positive Tone!

DUV Resist !

i-line exposure except for nLOF K7000 (KrF)

Page 5: Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone

Product Line-up

Merck Photoresist and Generic Semiconductor ProcessesProcess

& Required Film Thickness

Etching (Dry, Wet)Implant

FT: 0.5-4 µm

Lift-OffFT: 0.5-15 µm

Dry Etch, ImplantFT: 4-15 µm

RIE in MEMSFT: > 20 µm

Po

sit

ive

Neg

ati

ve

Im

ag

eR

eversal

5200

pLOF*

nLOF5500

nLOF2000

LNR*

nLOF K***

15nXTNX7020

125nXT

IPS-6000

TF5000X

40XT

P4000** / P4620M**

12XT

3DT

10XT

5

iHB*

iHP*

7900*

MIR 700*

ECI

3300

6100

8100

MIR 900*

GXR

Note: i- and g-line sensitivity except: *pure i-line **pure g-line ***KrF-line

Page 6: Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone

Product Line-up

Merck Thick-Film Resists Portfolio for Packaging

Applications& Required

Film Thickness

RDL in 2.5D/3D/FOFT: 1-20 µm

TSV, RDL, EtchFT: 3-15 µm

Cu, UBM PlatingFT: 5-30 µm

Solder Bumping, Cu Pillar

FT: 20-80 µm

Cu Pillar in 3D/FOFT: 80-400 µm

Po

sit

ive

Neg

ati

ve 15nXT

125nXT

NX7020

P4000* / P4620M*

10XT

TF5000X

40XT

12XT

3DT

IPS-6000

6 Note: i- and g-line sensitivity except: *pure g-line

Page 7: Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone

Recent Developments: AZ pLOF Photoresist

Positive-Tone Photoresist in a Lift-Off Process for Metallization

• Positive-tone i-line photoresist with ‘negative’ profile

• Profile ideal for lift-off process

• Excellent removal in lift-off process

• Film thickness range: 5 – 15 um

• Tapered Profile

Dimensions of the profile:

• Line opening (top): 3 um

• Film thickness: 12 um

Miniaturization in backend processes & increasing demand in precision limit utilization of ‘mechanical’ lifting

7

Metallization

(Evaporation)

SubstrateSubstrate

“Mechanical” Lift-Off and Stripping

Issue: ’Crown’ or ’Bat Ears’

Substrate

Page 8: Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone

Recent Developments: AZ LNR Photoresist

Optimized for Sputtering in a Lift-Off Process for Metallization

• Negative-tone i-line photoresist

• Single coating solution with high undercut

• Ideal to combine sputtering with lift-off

• Profile is reliably reproducible

• Profile is adjustable by process parameters

• Good removal properties

• Uniform Throw-Distance of sputtered metal

Throw Throw

Dimensions of the profile:

• Undercut height: 1.1 um

• Undercut distance: 3.6 um

• Film thickness: 3.5 um

Why is a photoresist with high undercut necessary?

8

Substrate

Sputtering is highly un-directional No metal bridging

Metallization Stripping

SubstrateSubstrate

Page 9: Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone

Recent Developments: AZ nLOF K7000 Photoresist

KrF Photoresist in a Lift-Off Process for Metallization

• High Precision

(far beyond i-line system)

5G standard is pushing the RF Filter evolution

• further miniaturization

• higher absolute CD precision requirements

• limits for i-line based systems

• Negative-tone KrF photoresist

• Tapered profile ideal for lift-off process

• Film thickness range: 0.5 – 1.5 um

Substrate

Metal DepositionPhotoresist Stripping

Substrate Substrate

0.35 um L/S@FT=1.3 um

0.18 um L/S@FT=0.53 um

9

Page 10: Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone

Recent Developments: AZ 3DT-400

Positive-tone Photoresist for Electroplating Applications

• Designed Undercut creates small footing that stabilizes electroplated structure

• Positive-tone i-line and bb photoresist

• Unique feature: designed with slight undercut

• Profile ideal for electroplating

• Excellent removal properties

• Photoresist film thickness range: 5 – 20 um

• High aspect ratio of (5 : 1)

Undercut

Dimensions of the profile:

• Film thickness: 12 um

• The photoresist profile is the template for the electroplated metal

• A designed undercut is beneficial

Substrate

Electroplating Stripping

Substrate Substrate

Photoresist

10

Footing stabilizes

Page 11: Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone

11

Merck’s Market Approach

Dedicated to Semiconductor Industry

Global Footprint

Partnership approach and open to Joint Development Activities

Technical Service Support

Address special needs and provide customer specific solutions (R&D)

Page 12: Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone