16
All you need to know about chip design, testing & manufacturing Israel, May 4, 2010 Comprehensive Low Power Design Analysis and Optimization An RTL to GDSII Approach Aveek Sarkar and Ronen Stilkol Apache Design Solutions

C:\fakepath\apache track d updated

Embed Size (px)

DESCRIPTION

 

Citation preview

Page 1: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Comprehensive Low Power Design Analysis and Optimization

An RTL to GDSII Approach

Aveek Sarkar and Ronen Stilkol

Apache Design Solutions

Page 2: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Power: The Metric For Chip Success

Battery performance ~ f(operational and standby current)

Current Drawn

Operational current

~ f(switching, short-circuit current)

~ f(logic, mode, frequency, library, PVT)

Standby current

~ f(sub-threshold/gate/junction leakage)

~ f(circuit, library, PVT)

Heat dissipation ~ f(current drawn, supply voltage)

Power dissipated = voltage X current

2

Page 3: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Trends in Current Draw and Power Dissipation

Both dynamic and standby (leakage

currents) increasing with process

Need to control both

Supply voltage cannot scale

sufficiently fast

Threshold voltage does not scale

3

Page 4: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Po

wer

Number of RTL edits

4

Current and Voltage as Design Targets

Circuit changes to “reduce”

current increases voltage fluctuation

Reduced supply voltage +

increased fluctuation affects NM

1

1 Predict power accurately “early”

2 Predict power reduction possible

2

3 Identify achievable design changes

3

Page 5: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Physical Implementation& Signoff

RTL Design & reduction

Power in the RTLGDSII Flow

Floor-planning& Synthesis

Target power reduction early in the design flow

Ensure design verification to predict

voltage drop noise from low power

techniques

Power reduction Usage Curve

Power Integrity Usage Curve

Chip-Package-System Convergence

5

Page 6: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Techniques for Power ReductionAn Analysis Driven Approach

Early yet accurate analysis

Before synthesis (logic)

Before routing (cap)

Analysis driven reduction

 Rapid, early identification of power

hot-spots

 Power gating and voltage island

prototyping

 Predictable power reduction:

clock, memory, datapath

 Power vs implementation overhead

6

Page 7: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Operational Power Reduction Clock Tree Optimization

7

RTL: Add and Improve Clock Enables

Non-enabledEnabled

selsel sel_1dsel_1d

11

R2R2

D

RTL reductions make clock gating more effectiveRTL reductions make clock gating more effective

EN

CLKCG

GCLK

D

EN

CLK

D

Synthesis: Clock Gating

RTL

Gates

Page 8: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Operational Power Reduction Datapath Optimization

8

Page 9: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Standby Power Reduction Power Gating

Power Gating Options

He

ad

er

Sw

itc

he

sF

oo

ter

Sw

itc

he

s

Block

Vdd

Vss

CTL

Block

Vss

Vdd

CTL

Dual Switches

Dual Switches

cntl1

cntl2

ExtVSS

IntVSS

ExtVDD

IntVDD

Advanced power gating modes give

significant “standby” mode saving

Requires careful design and layout

9

Page 10: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Power gated domain transitions from

off- to on-state

If in a driver-receiver pair, the receiver

supply ramps up first, it causes high

crowbar current scenario

Constant activity Mode

Clock gating mode

10

Power gating Clock gating

Clock mode transitions generate transient event causing Ldi/dt noise

Impact of Low Power Design Techniques on Power Integrity

Page 11: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Impact of Design and Process Changes on Silicon Integrity

11

Page 12: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Change in ESC/ESR for a decap cellNormalized against 130nm

Low Power Design Verification Challenges

12

Impact of package

Connection to die

Package routing and layers

Impact of decap

Decreasing efficiency

Leakage current trade-off

Page 13: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Power Integrity Analysis for Low Power Designs

13

DC (IR):

Static IR, power/signal EM

Transient (Ldi/dt + iR)

Functional mode

Test-mode (L/MBIST, scan)

Clock gating transition

Ramp-up and mixed-mode

Page 14: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

Case StudiesBump Placement and Package Issues Highlighted

High drop area

High switching activity

Insufficient number of bumps

Incorrect package routing

Cluster of high power cells

Driving high load

Firing at same time

Insufficient package layers

Routing congestion

Fragmented routing ~ high L

L di / dt ~ high DvD

14

Page 15: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

RTL to GDS CPS Convergence

Chip Package System ConvergenceAn RTL to GDSII Focus

04/11/23 ,15

RTL Design & reduction

RTL Power Reduction

RTL Power Reduction

RTL Power Analysis

RTL Power Analysis

Floor-planning& Synthesis

PG, IO Planning

Early CPM

PG, IO Planning

Early CPM

Package/PCBplanning

Package/PCBplanning

Physical Implementation

& Signoff

IP ValidationSoC AnalysisTiming Impact

IP ValidationSoC AnalysisTiming Impact

CPS sign-off+ cost downCPS sign-off+ cost down

15

Page 16: C:\fakepath\apache   track d updated

All you need to know about chip design, testing & manufacturing

Israel, May 4, 2010

I.Calhoun, B and Chandrakasan, A, “Static Noise Margin Variation for Sub-Threshold SRAM in 65-nm CMOS”, IEEE Journal of Solid State Circuits, vol 41, no 7, July 2006.II.Cadence Design Systems, “A Practical Guide to Low-Power Design: User Experience with CPF”, Cadence Design Systems whitepaper, May 2008.III.N.S. Kim, T. Austin, D. Blaauw, T. Mudge, K. Flautner, J.S. Hu, M. J. Irwin, M. Kandemir and V. Narayanan, “Leakage Current: Moore's Law Meets Static Power”, IEEE Transactions on Computers, Vol. 36, No. 12, December 2003, pp. 68-77.IV.L. K. Yong, F. Tan and C. S. Lee, “Power Noise Mitigation Strategy from RTL Perspective on MTCMOS Design”, DAC User Track presentation, DAC 2010, to appear.V.A. Sarkar, “Power Noise Analysis for Next Generation ICs”, Apache Design Solutions whitepaper, June 2009.

Selected References

16