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SIDDHARTH INSTITUTE OF ENGINEERING &
TECHNOLOGY
(AUTONOMOUS)
NARAYANAVANAM ROAD, PUTTUR- 517 583
ELECTRONIC DEVICES & CIRCUITS
LABORATORY MANUAL
DEPARTMENT
OF
ELECTRONICS AND COMMUNICATION ENGINEERING
PREPARED BY VERIFIED
BY
M.MARIMUTHU M.JANARDHANA RAJU
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Assistant Professor Professor/Head of the Department
(15A04305) ELECTRONIC DEVICES AND CIRCUITS LABORATORY
PART A: Ele!"#$% "'#* P"+!%e
1. Identification, Specifications, Testing of R, L, C Components (Coor Codes!,
Potentiometers, Cois, "ang Condensers, Rea#s, $read $oards.
%. Identification, Specifications and Testing of acti&e de&ices, Diodes, $'Ts, ')Ts,
L)Ds, LCDs, SCR, *'T.
+. Sodering Practice Simpe circ-its -sing acti&e and passi&e components.
. St-d# and operation of Ammeters, otmeters, Transformers, Anaog and Digita
0-timeter, -nction "enerator, Reg-ated Poer S-pp# and CR2.
PART B: L%! #, E-*e"%e$!
(/#" L+#"+!#" E-+%$+!%#$2M%$% #, Te$ E-*e"%e$!)
1. P3 '-nction Diode Characteristics
Part A4 "ermani-m Diode (orard 5ias 6 Re&erse 5ias!
Part $4 Siicon Diode (orard 5ias on#!
%. 7ener Diode Characteristics
Part A4 I Characteristics
Part $4 7ener Diode act as a otage Reg-ator
+. Rectifiers (itho-t and ith cfiter!
Part A4 Hafa&e Rectifier
Part $4 -a&e Rectifier
. $'T Characteristics(C) Config-ration!Part A4 Inp-t Characteristics
Part $4 2-tp-t Characteristics
8. )T Characteristics(CS Config-ration!
Part A4 Drain (2-tp-t! Characteristics
Part $4 Transfer Characteristics
9. SCR Characteristics
:. *'T Characteristics
;. Transistor $iasing
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PART A: Ele!"#$% "'#* P"+!%e
1. Ie$!%,%+!%#$ S*e%,%+!%#$ Te!%$6 #, R L C C#*#$e$! (C#l#" C#e)
P#!e$!%#e!e" C#%l 7+$6 C#$e$e" Rel+ B"e+ B#+".
AIM:
To st-d# a5o-t identification, specification and testing of the R, L, and C components,
Potentiometers, Cois, "ang Condensers, Rea#s and $read $oards.
APPARATUS RE8UIRED:
S.32 C20P23)3TS >*A3TIT?
1 Resistor 1
% Capacitor 1
+ Ind-ctor 1
Potentiometer 1
8 Cois 1
9 "ang Condenser 1
: Rea# 1
; $read 5oard 1
THEORY:
1. RESISTOR
Resistor is an eectronic component hose f-nction is to imit the fo of c-rrent in an
eectric circ-it. It is meas-red in -nits caed ohms. The s#m5o for ohm is (omega!.
@itho-t resistors &otage o-d 5e too great for indi&id-a components to hande and o-d
res-t in o&eroading or destr-ction.
Ie$!%,%+!%#$:
Color codingis -sed in eectronics to identif# 5eteen different components. )ectronic
components ie resistors are &er# sma in siBe and it is diffic-t to print its &a-e direct# on
to the component s-rface. Hence a standard as formed in 1
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a. ied resistor5. &aria5e Resistor
c. Potentiometer
T#pica resistor attage siBes are 1/;, 1/, 1/%, 1, %, 8, 1= and %= (! -nits, depending on
thicness of eads @attage of resistors can 5e decided. The &ario-s t#pes of resistors are
car5on resistor, thin fim resistor, ire o-nd resistor and rheostat.
https://en.wikipedia.org/wiki/File:Resistor,_Rheostat_(variable_resistor),_and_Potentiometer_symbols.svg7/25/2019 Edc Lab Manual - Marimuthu
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Te!%$6:
1. connect the meas-ring pro5es into the socet of the Digita 0-timeter
%. Sitch on the m-timeter and set the no5 in ohms position
+. 3o meas-re the resistance 5# pacing the testing pro5es on either side if the resistor.
. The &a-e of the resistance in ohms is noted and &erified -sing coor coding
8. If no &a-e is dispa#ed, see the resistor for an# 5-rnt shades or damages.
9. CAPACITOR
The C+*+%!#", sometimes referred to as a C#$e$e", is a simpe passi&e de&ice that is
-sed to store eectricit#. The capacitor is a component hich has the a5iit# or capacit# tostore energ# in the form of an eectrica charge prod-cing a potentia difference (Static
Voltage! across its pates, m-ch ie a sma rechargea5e 5atter#.
Ie$!%,%+!%#$:
Capacitors are identified -sing the &a-e ritten on the 5od#. There are some capacitors
hich are identified -sing coor codes. A capacitor is said to 5e F-# ChargedG hen the
&otage across its pates e-as the s-pp# &otage. The s#m5o for eectrica charge is >
and its -nit is the Co-om5.
S*e%,%+!%#$:
)ectro#tic capacitors are poariBed. The# ha&e a &e and a &e termina. Capacitance is
meas-red in /+"+, hich is a &er# arge -nit so %"#2/+"+(-!, N+$#2/+"+(n!
and P%#2/+"+(p! are genera# -sed. Capaciti&e reactance is the opposition to c-rrent
fo in AC circ-its. In AC capaciti&e circ-its the &otage FagsG the c-rrent 5#
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To specif# the &a-e of the ceramic capacitor e -se the code ta5e shon 5eo
Picofarad
(p!
3anofarad
(n!
0icrofarad
(-!Code
Picofarad
(p!
3anofarad
(n!
0icrofarad
(-!Code
1= =.=1 =.====1 1== :== .: =.==: :%
18 =.=18 =.====18 18= 8=== 8.= =.==8 8=%
%% =.=%% =.====%% %%= 89== 8.9 =.==89 89%
++ =.=++ =.====++ ++= 9;== 9.; =.==9; 9;%
: =.=: =.====: := 1==== 1= =.=1 1=+
1== =.1 =.===1 1=1 18=== 18 =.=18 18+
1%= =.1% =.===1% 1%1 %%=== %% =.=%% %%+
1+= =.1+ =.===1+ 1+1 ++=== ++ =.=++ +++18= =.18 =.===18 181 :=== : =.=: :+
1;= =.1; =.===1; 1;1 9;=== 9; =.=9; 9;+
%%= =.%% =.===%% %%1 1===== 1== =.1 1=
++= =.++ =.===++ ++1 18==== 18= =.18 18
:= =.: =.===: :1 %===== %== =.% %8
89= =.89 =.===89 891 %%==== %%= =.%% %%
9;= =.9; =.===9; 9;1 ++==== ++= =.++ ++
:8= =.:8 =.===:8 :81 :==== := =.: :
;%= =.;% =.===;% ;%1 9;==== 9;= =.9; 9;1=== 1.= =.==1 1=% 1====== 1=== 1.= 1=8
18== 1.8 =.==18 18% 18===== 18== 1.8 188
%=== %.= =.==% %=% %====== %=== %.= %=8
%%== %.% =.==%% %%% %%===== %%== %.% %%8
++== +.+ =.==++ ++% ++===== ++== +.+ ++8
Te!%$6:
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1 Checing this capacitor ith a capacitance meter is straight forard. 2n these
capacitors, the positi&e ead is mared. Attach the positi&e (red! ead from the meter to
that and the negati&e (5ac! to the opposite. This capacitor shos 1=+;J, cear#
ithin its toerance.
! In this eampe the capacitor i 5e charged ith a
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Unit of Inductance
@hich e deri&ed at e-ation, @here, L is non is the sefind-ction of the circ-it. In the
a5o&e e+!%#$ #, %$!+$e, if e 1 ot and (di / dt! is one ampere per second, then L 1
and its -nit is Henr#. That means, if a circ-it, prod-ces emf of 1 ot, d-e to the rate of
change of c-rrentthro-gh it, one ampere per second then the circ-it is said to ha&e one henr#
sefind-ctance. This henr# is $%! #, %$!+$e
P#!e$!%#e!e":
A *#!e$!%#e!e", informa# a *#!, is a threeterminaresistorith a siding or rotating
contact that forms an adM-sta5e&otage di&ider.N1OIf on# to terminas are -sed, one end and
the iper, it acts as a variable resistoror rheostat.
The meas-ring instr-ment caed apotentiometeris essentia# a &otage di&ider -sed for
meas-ring eectric potentia (&otage! the component is an impementation of the same
principe, hence its name.
Potentiometers are common# -sed to contro eectrica de&ices s-ch as &o-me contros on
a-dio e-ipment. Potentiometers operated 5# a mechanism can 5e -sed as position
transd-cers, for eampe, in aMo#stic. Potentiometers are rare# -sed to direct# controsignificant poer (more than a att!, since the poer dissipated in the potentiometer o-d
5e compara5e to the poer in the controed oad.
C#%l:
http://www.electrical4u.com/electric-current-and-theory-of-electricity/https://en.wikipedia.org/wiki/Terminal_(electronics)https://en.wikipedia.org/wiki/Resistorhttps://en.wikipedia.org/wiki/Voltage_dividerhttps://en.wikipedia.org/wiki/Potentiometer#cite_note-1https://en.wikipedia.org/wiki/Potentiometer_(measuring_instrument)https://en.wikipedia.org/wiki/Electric_potentialhttps://en.wikipedia.org/wiki/Transducerhttps://en.wikipedia.org/wiki/Joystickhttps://en.wikipedia.org/wiki/Watthttp://www.electrical4u.com/electric-current-and-theory-of-electricity/https://en.wikipedia.org/wiki/Terminal_(electronics)https://en.wikipedia.org/wiki/Resistorhttps://en.wikipedia.org/wiki/Voltage_dividerhttps://en.wikipedia.org/wiki/Potentiometer#cite_note-1https://en.wikipedia.org/wiki/Potentiometer_(measuring_instrument)https://en.wikipedia.org/wiki/Electric_potentialhttps://en.wikipedia.org/wiki/Transducerhttps://en.wikipedia.org/wiki/Joystickhttps://en.wikipedia.org/wiki/Watt7/25/2019 Edc Lab Manual - Marimuthu
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An ele!"#+6$e!% #%lis an eectrica cond-ctors-ch as a irein the shape of a coi,spira
or hei. )ectromagnetic cois are -sed in eectrica engineering, in appications here
eectric c-rrentsinteract ith magnetic fieds, in de&ices s-ch as ind-ctors, eectromagnets,
transformers, and sensor cois. )ither an eectric c-rrent is passed thro-gh the ire of the coi
to generate a magnetic fied, or con&erse# an eterna time-varyingmagnetic fied thro-gh
the interior of the coi generates an )0(&otage! in the cond-ctor.
Cois can 5e cassified 5# the fre-enc# of the c-rrent the# are designed to operate ith4
Direct currentorDCcois or eectromagnets operate ith a stead#direct
c-rrentin their indings
Audio-frequencyorAFcois, ind-ctors or transformers operate ith
aternating c-rrentsin the a-dio fre-enc#range, ess than %= HB
Radio-frequencyorRFcois, ind-ctors or transformers operate ith
aternating c-rrents in the radio fre-enc#range, a5o&e %= HB
7+$6 C#$e$e":
A gang condenser is a a &aria5e capacitor.A &aria5e capacitor is constr-cted in s-ch manner
that its &a-e of capacitance can 5e &aried. A t#pica &aria5e capacitor (adM-sta5e capacitor!
is the rotorstator t#pe. It consists of to sets of meta pates arranged so that the rotor pates
mo&e 5eteen the stator pates. Air is the dieectric. As the position of the rotor is changed,
the capacitance &a-e is ieise changed. This t#pe of capacitor is -sed for t-ning most radio
recei&ers.
https://en.wikipedia.org/wiki/Electrical_conductivityhttps://en.wikipedia.org/wiki/Wirehttps://en.wiktionary.org/wiki/coilhttps://en.wikipedia.org/wiki/Spiralhttps://en.wikipedia.org/wiki/Helixhttps://en.wikipedia.org/wiki/Electrical_engineeringhttps://en.wikipedia.org/wiki/Electric_currenthttps://en.wikipedia.org/wiki/Magnetic_fieldhttps://en.wikipedia.org/wiki/Inductorhttps://en.wikipedia.org/wiki/Electromagnethttps://en.wikipedia.org/wiki/Transformerhttps://en.wikipedia.org/wiki/Electromotive_forcehttps://en.wikipedia.org/wiki/Voltagehttps://en.wikipedia.org/wiki/Frequencyhttps://en.wikipedia.org/wiki/Direct_currenthttps://en.wikipedia.org/wiki/Direct_currenthttps://en.wikipedia.org/wiki/Alternating_currenthttps://en.wikipedia.org/wiki/Audio_frequencyhttps://en.wikipedia.org/wiki/Radio_frequencyhttps://en.wikipedia.org/wiki/Electrical_conductivityhttps://en.wikipedia.org/wiki/Wirehttps://en.wiktionary.org/wiki/coilhttps://en.wikipedia.org/wiki/Spiralhttps://en.wikipedia.org/wiki/Helixhttps://en.wikipedia.org/wiki/Electrical_engineeringhttps://en.wikipedia.org/wiki/Electric_currenthttps://en.wikipedia.org/wiki/Magnetic_fieldhttps://en.wikipedia.org/wiki/Inductorhttps://en.wikipedia.org/wiki/Electromagnethttps://en.wikipedia.org/wiki/Transformerhttps://en.wikipedia.org/wiki/Electromotive_forcehttps://en.wikipedia.org/wiki/Voltagehttps://en.wikipedia.org/wiki/Frequencyhttps://en.wikipedia.org/wiki/Direct_currenthttps://en.wikipedia.org/wiki/Direct_currenthttps://en.wikipedia.org/wiki/Alternating_currenthttps://en.wikipedia.org/wiki/Audio_frequencyhttps://en.wikipedia.org/wiki/Radio_frequency7/25/2019 Edc Lab Manual - Marimuthu
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Rel+:
A "el+is an eectrica#operated sitch. 0an# rea#s -se an eectromagnetto
mechanica# operate a sitch, 5-t other operating principes are aso -sed, s-ch as soidstate
rea#s. Rea#s are -sed here it is necessar# to contro a circ-it 5# a opoer signa (ith
compete eectrica isoation 5eteen contro and controed circ-its!, or here se&era
circ-its m-st 5e controed 5# one signa. The first rea#s ere -sed in ong distance teegraphcirc-its as ampifiers4 the# repeated the signa coming in from one circ-it and retransmitted
it on another circ-it. Rea#s ere -sed etensi&e# in teephone echanges and ear#
comp-ters to perform ogica operations.
B"e+ B#+":
https://en.wikipedia.org/wiki/Electrichttps://en.wikipedia.org/wiki/Switchhttps://en.wikipedia.org/wiki/Electromagnethttps://en.wikipedia.org/wiki/Solid-state_relayhttps://en.wikipedia.org/wiki/Solid-state_relayhttps://en.wikipedia.org/wiki/Electrical_telegraphhttps://en.wikipedia.org/wiki/Electrichttps://en.wikipedia.org/wiki/Switchhttps://en.wikipedia.org/wiki/Electromagnethttps://en.wikipedia.org/wiki/Solid-state_relayhttps://en.wikipedia.org/wiki/Solid-state_relayhttps://en.wikipedia.org/wiki/Electrical_telegraph7/25/2019 Edc Lab Manual - Marimuthu
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A "e+#+"is a constr-ction 5ase forprotot#pingof eectronics. 2rigina# it as itera#
a 5read 5oard, a poished piece of ood -sed for sicing 5read. In the 1e"e %+)
P+"! B: S%l%#$ D%#e (/#"
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S.NO COMPONENTS RAN7E 8UANTITY
1 Diode 13==: 1
% Reg-ated Poer
s-pp#
(=+=&! 1
+ Resistor 1Q 1
Ammeters (=%== mA, =8==mA! 1 each8 otmeter (=%= ! 1
9 $read 5oard 1
: Connecting ires As re-ired
THEORY:
P3 M-nction diode cond-cts on# in one direction. The I characteristics of the diode
are c-r&e 5eteen &otage across the diode and c-rrent thro-gh the diode. @hen eterna
&otage is Bero, circ-it is open and the potentia 5arrier does not ao the c-rrent to fo.
Therefore, the circ-it c-rrent is Bero. @hen Pt#pe (Anode is connected to &e termina andn t#pe (cathode! is connected to &e termina of the s-pp# &otage, is non as forard
5ias.
The potentia 5arrier is red-ced hen diode is in the forard 5iased condition. At
some forard &otage, the potentia 5arrier atogether eiminated and c-rrent starts foing
thro-gh the diode and aso in the circ-it. The diode is said to 5e in 23 state. The c-rrent
increases ith increasing forard &otage.
PROCEDURE
/OR&ARD BIAS41. Connections are made as per the circ-it diagram.
%. In forard 5ias, the RPS &e is connected to the anode of the diode and RPS &e is
connected to the cathode of the diode,
+. Sitch on the poer s-pp# and increases the inp-t &otage (s-pp# &otage! in Steps.
. 3ote don the corresponding c-rrent foing thro-gh the diode and &otage across the
diode for each and e&er# step of the inp-t &otage.
8. The reading of &otage and c-rrent are ta5-ated.
9. "raph is potted 5eteen &otage and c-rrent.
CIRCUIT DIA7RAM
/OR&ARD BIAS:
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MODEL 7RAPH:
TABULATION AND OBSERVATIONS:
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/OR&ARD BIAS:
S.NO /OR&ARD
VOLTA7E
(V)
/OR&ARD
CURRENT
(A)
19
3
4
5
?
@
10
RESULT:
Th-s the st-d# of I characteristics of P3 M-nction diode is s-ccessf-# competed
C! %$ >#l!+6e
B"e+' D#
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T# ! !e >#l!+6e2""e$! +"+!e"%!% #, 6e"+$% (/#"e"e
%+)
APPARATUS RE8UIRED:
S.NO COMPONENTS RAN7E 8UANTITY
1 Diode 13+A 1
% Reg-ated Poer
s-pp#
(=+=&! 1
+ Resistor 1Q 1
Ammeters (=%== mA, =8==A! 1 each
8 otmeter (=%= ! 1
9 $read 5oard 1
: Connecting ires As re-ired
THEORY:
P3 M-nction diode cond-cts on# in one direction. The I characteristics of the diode
are c-r&e 5eteen &otage across the diode and c-rrent thro-gh the diode. @hen eterna
&otage is Bero, circ-it is open and the potentia 5arrier does not ao the c-rrent to fo.
Therefore, the circ-it c-rrent is Bero. @hen Pt#pe (Anode is connected to &e termina and
n t#pe (cathode! is connected to &e termina of the s-pp# &otage, is non as forard
5ias.
The potentia 5arrier is red-ced hen diode is in the forard 5iased condition. At
some forard &otage, the potentia 5arrier atogether eiminated and c-rrent starts foing
thro-gh the diode and aso in the circ-it. The diode is said to 5e in 23 state. The c-rrent
increases ith increasing forard &otage.
@hen 3t#pe (cathode! is connected to &e termina and Pt#pe (Anode! is connected &e
termina of the s-pp# &otage is non as re&erse 5ias and the potentia 5arrier across the
M-nction increases. Therefore, the M-nction resistance 5ecomes &er# high and a &er# sma
c-rrent (re&erse sat-ration c-rrent! fos in the circ-it. The diode is said to 5e in 2 state.
The re&erse 5ias c-rrent d-e to minorit# charge carriers on#
PROCEDURE
/OR&ARD BIAS41. Connections are made as per the circ-it diagram.
%. In forard 5ias, the RPS &e is connected to the anode of the diode and RPS &e is
connected to the cathode of the diode,
+. Sitch on the poer s-pp# and increases the inp-t &otage (s-pp# &otage! in Steps.
. 3ote don the corresponding c-rrent foing thro-gh the diode and &otage across the
diode for each and e&er# step of the inp-t &otage.
8. The reading of &otage and c-rrent are ta5-ated.
9. "raph is potted 5eteen &otage and c-rrent.
CIRCUIT DIA7RAM
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/OR&ARD BIAS:
REVERSE BIAS:
MODEL 7RAPH:
REVERSE BIAS41. Connections are made as per the circ-it diagram
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% .or re&erse 5ias, the RPS &e is connected to the cathode of the diode and RPS &e is
connected to the anode of the diode.
+. Sitch on the poer s-pp# and increase the inp-t &otage (s-pp# &otage! in Steps
. 3ote don the corresponding c-rrent foing thro-gh the diode &otage across the diode
for each and e&er# step of the inp-t &otage.
8. The readings of &otage and c-rrent are ta5-ated9. "raph is potted 5eteen &otage and c-rrent.
TABULATION AND OBSERVATIONS:
/OR&ARD BIAS: REVERSE BIAS:
S.NO /OR&ARD
VOLTA7E
(V)
/OR&ARD
CURRENT
(A)
19
3
4
5
?
@
10
RESULT:
Th-s the st-d# of I characteristics of P3 M-nction diode is s-ccessf-# competed
C! %$ >#l!+6e
B"e+' D#
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! Fe$e" D%#e V2I C+"+!e"%!%
AIM:
T# ! !e >#l!+6e ; ""e$! +"+!e"%!% #, Fe$e" %#e("e>e"e %+ #$l)
COMPONENTS RE8UIRED:
S. N# A**+"+! R+$6e 8+$!%!
1 7ener Diode I79.% 1
% Resistance 1Qohm 1
+ Reg-ated Poer S-pp# (=+=! 1
Ammeter (=1==!mA 1
8 otmeter (=+=! 1
9 $read 5oard and connecting ires As re-ired
CIRCUIT DIA7RAM:
REVERSE BIAS:
SYMBOL:
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MODEL 7RAPH:
THEORY:
The Fe$e" %#eis ie a generap-rpose signa diode consisting of a siicon P3
M-nction. @hen 5iased in the forard direction it 5eha&es M-st ie a norma signa diode
passing the rated c-rrent, 5-t as soon as a re&erse &otage appied across the 7ener Diode
eceeds the rated &otage of the de&ice, the diodes 5readon &otage is reached at hich
point a process caedAvalanche Breakdownocc-rs in the semicond-ctor depetion a#er and
a c-rrent starts to fo thro-gh the diode to imit this increase in &otage.
The c-rrent no foing thro-gh the Bener diode increases dramatica# to the maim-m
circ-it &a-e (hich is -s-a# imited 5# a series resistor! and once achie&ed this re&erse
sat-ration c-rrent remains fair# constant o&er a ide range of appied &otages. The &otagepoint at hich the &otage across the Bener diode 5ecomes sta5e is caed the FBener &otageG
for Bener diodes this &otage can range from ess than one &ot to h-ndreds of &ots.
The point at hich the Bener &otage triggers the c-rrent to fo thro-gh the diode can
5e &er# acc-rate# controed (to ess than 1E toerance! in the doping stage of the diodes
semicond-ctor constr-ction gi&ing the diode a specificzener reakdown voltage, ( B ! for
eampe, .+ or :.8. This Bener 5readon &otage on the I c-r&e is amost a &ertica
straight ine.
PROCEDURE:
REVERSE BIASED CONDITION:
1. Connect the 7ener diode in Re&erse 5ias i.e anode is connected to negati&e of the
poer s-pp# and cathode is connected to positi&e of the poer s-pp# as in circ-it.
%. or &ario-s &a-es of re&erse &otage (r! note don the corresponding &a-es of
re&erse c-rrent (Ir!.
http://amazon.in/s/?field-keywords=Zener+Diodes+and+Their+Applicationshttp://amazon.in/s/?field-keywords=Zener+Diodes+and+Their+Applications7/25/2019 Edc Lab Manual - Marimuthu
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TABULATION AND OBSERVATIONS:
REVERSE BIAS:
RESULT:
Th-s the st-d# of I characteristics of 7ener diode is s-ccessf-# competed
Fe$e" B"e+' D#
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3 (+) . HAL/ &AVE RECTI/IER &ITH AND &ITH OUT /ILTER
AIM:
1. To pot 2-tp-t a&eform of the Haf @a&e Rectifier.
%. To find rippe factor for Haf @a&e Rectifier -sing the form-ae.
COMPONENTS RE8UIRED:
S.N# A**+"+! T*e R+$6e 8+$!%!
1 Diode I3==1 1
% Resistance := 1
+ Reg-ated Poer S-pp# (=+=! 1
CR2 1
8 Transformer 9=9 1
9 Capacitor : 1
: $read 5oard and connecting ires
CIRCUIT DIA7RAM:
Te#":
The operation of a haf a&e rectifier is prett# simpe. rom the theor# part, #o-sho-d no that a pn M-nction diode cond-cts c-rrent on# in 1 direction. In other ords, a
pn M-nction diode cond-cts c-rrent on# hen it is forard 5iased.
The same principe is made -se of in a haf a&e rectifier to con&ert AC to DC. The
inp-t e gi&e here is an aternating c-rrent. This inp-t &otage is stepped don -sing a
transformer. The red-ced &otage is fed to the diode UDK and oad resistance RL. D-ring the
positi&e haf c#ces of the inp-t a&e, the diode UDK i 5e forard 5iased and d-ring the
negati&e haf c#ces of inp-t a&e, the diode UDK i 5e re&erse 5iased.
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M#el e,#":
&ITH /ILTER:
EGPERIMENT PROCEDURE:
1. Connections are gi&en as per the circ-it diagram.
%. App# AC main &otage to the primar# of the transformer. eed the rectified 2-tp-t
&otage to the CR2 and o5ser&e the @a&eform.
+. 3o connect the capacitor in parae ith oad resistor and note don the ampit-de
and time period of the a&eform.
. Pot the inp-t, o-tp-t a&eforms on a graph sheet.
8. Cac-ate the rippe factor.
T+l+" #l$:
S.N# R L V+ V
R%**le /+!#"
V+V
(
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%. @h# rectifiers -sed ith a fiter at their o-tp-t.
+. @hat is rippe factor
. @hat is the &otage reg-ation of the rectifier.
8. @hat is the idea &a-e of reg-ation.
3(). /ULL &AVE RECTI/IER &ITH AND &ITH OUT /ILTER
AIM:
1. To pot 2-tp-t a&eform of the - @a&e Rectifier.
%. To find rippe factor for - @a&e Rectifier -sing the form-ae.
COMPONENTS RE8UIRED:
S. N# A**+"+! T*e R+$6e 8+$!%!
1 Diode I3==1 %
% Resistance := 1
+ Reg-ated Poer S-pp# (=+=! 1 CR2 1
8 Transformer 9=9 1
9 Capacitor : 1
: $read 5oard and connecting ires
CIRCUIT DIA7RAM:
OUTPUT &AVE/ORM &ITH /ILTER
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Te#":
The f- a&e rectifier circ-it consists of to!ower diode"connected to a singe oad
resistance (RL! ith each diode taing it in t-rn to s-pp# c-rrent to the oad. @hen point Aof the transformer is positi&e ith respect to point C, diode D1 cond-cts in the forard
direction as indicated 5# the arros.
@hen point $ is positi&e (in the negati&e haf of the c#ce! ith respect to point C,
diode D%cond-cts in the forard direction and the c-rrent foing thro-gh resistor R is in the
same direction for 5oth hafc#ces. As the o-tp-t &otage across the resistor R is the phasor
s-m of the to a&eforms com5ined, this t#pe of f- a&e rectifier circ-it is aso non as a
F5iphaseG circ-it.
T+l+" #l$:
S.N# R L V+ V
R%**le /+!#"
V+V
(
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+. 3o connect the capacitor in parae ith oad resistor and note don the ampit-de
and time period of the a&eform.
. Pot the inp-t, o-tp-t itho-t fiter and ith fiter a&eform on a graph sheet.
8. Cac-ate the rippe factor.
RESULT:
PRELAB 8UESTIONS:
1. @hat are the ad&antages and disad&antages of capacitor fiter.
%. @hat are the appications of rectifiers.
+. @hat is the reg-ation for a (i! Haf a&e circ-it (ii! -a&e circ-it
. @hat is PIV State it &a-e in case of (i! haf a&e (ii! - a&e (iii! $ridge rectifier.
8. @hat is the need for rectification.
4. INPUT AND OUTPUT CHARACTERISTICS O/ TRANSISTOR IN CECON/I7URATION
AIM:
To st-d# the inp-t and o-tp-t characteristics of a 5ipoar M-nction transistor in
C20023 )0ITT)R config-ration
COMPONENTS RE8UIRED:
S.N# A**+"+! T*e R+$6e 8+$!%!
1. Transistor $C1=: 1
%. Resistance 1Q 1
+. Reg-ated Poer S-pp# (=+=! 1
. Ammeter (=+=!mA,(=8=!A 1
8. otmeter (=+=! %
9. $read 5oard , connecting ires
CIRCUIT DIA7RAM:
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INPUT CHARACTRISTICS: OUTPUT CHARACTRISTICS:
EGPERIMENT PROCEDURE:
INPUT CHARACTERISTICS:
1. Connect the transistor in C) config-ration as per circ-it diagram
%. Qeep o-tp-t &otage C) at constant &otage 5# &ar#ing CC.
+. ar#ing $) grad-a#, note don 5oth 5ase c-rrent I$ and $).
. Repeat a5o&e proced-re (step +! for &ario-s &a-es of C)
OUTPUT CHARACTERISTICS:
1. 0ae the connections as per circ-it diagram.
%. $# &ar#ing $) eep the 5ase c-rrent I$constant.
+. ar#ing CC grad-a#, note don the readings of coectorc-rrent (IC! and
coector emitter &otage (C)!.
. Repeat a5o&e proced-re (step +! for different &a-es of I5
8. Pot the inp-t characteristics 5# taing $) on ?ais and I$ on Wais at
Constant C).
9. Pot the o-tp-t characteristics 5# taing C) on ais and IC on #ais 5#
taing I$ as a constant parameter.
RESULT:
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PRE LAB 8UESTIONS:
1. @h# 3P3 transistors are prefera5e for ampification p-rpose than P3P transistors.
%. )pain the sitching action of a transistorV
+. At hat region of the o-tp-t characteristics, a transistor can act as an ampifierV
. @hat happens hen e change the 5iasing condition of the transistorsV
8. @h# the o-tp-t is phase shifted 5# 1;= X on# in C) config-ration.
5. /ET CHARACTERISTICS
AIM:
1. To st-d# Drain Characteristics of a )T.
! To st-d# Transfer Characteristics of a )T.
COMPONENTS RE8UIRED:
S.N# A**+"+! T*e R+$6e 8+$!%!
1. ')T Transistor $@1= 1
9. Resistance 1Q %
3. Ammeter =%= mA, =8== A 14. otmeter (=1!,(=+=! 1
5. $read 5oard 6 connecting @ires
?. Reg-ated Poer S-pp# (=+=! 1
CIRCUIT DIA7RAM:
MODEL 7RAPH:
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TABULAR COLUMN:
DRAIN CHARACTERISTICS
V6 V6 V6
VDS (V) ID(A) VDS(V) ID(A) VDS(V) ID(A)
TRANS/ER CHARACTERISTICS
DS DS gs (! ID(mA! gs(! ID(mA!
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EGPERIMENT PROCEDURE:
DRAIN CHARACTERISTICS
1. Connect the circ-it as shon in the circ-it diagram.
%. Determine the drain characteristics of )T 5# eeping "S =&.
+. Pot its characteristics ith respect to DS &ers-s ID
TRANS/ER CHARACTERISTICS4
1. Determine the transfer characteristics of )T for constant &a-e of DS.
%. Pot its characteristics ith respect to "S &ers-s ID
+. Pot the drain characteristics 5# taing DS on Wais and ID on ?ais at constant
"S.
. Pot the Transfer characteristics 5# taing "S on Wais and ID on ?ais at constant
DS.
CALCULATIONS:
Trans cond-ctance (gm! YID/ YDS
Drain resistance (rd! YDS/ YID
RESULT:
PRELAB 8UESTIONS:
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1. @h# )T is caed as a -nipoar transistorV
%. @hat are the ad&antages of )T o&er $'TV
+. State h# )T is &otage controed de&iceV
. @hat is the difference 5eteen 02S)T and )TV
8. @h# )T is 5etter than $'TV
?. SILICON2CONTROLLED RECTI/IER (SCR) CHARACTERISTICS
AIM: To dra the I Characteristics of SCR.
COMPONENTS RE8UIRED:
S.N# A**+"+! T*e R+$6e 8+$!%!
1. SCR T?3919 1
9. RPS (=+=! 1
3. R)SIST2RS 1=Q ,1Q 1,1
4. Ammeter (=8=mA! 1
5. otmeter (=1=! 1
?. 5read5oard 6 connecting ires
CIRCUIT DIA7RAM:
THEORY:
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It is a fo-r a#er semicond-ctor de&ice 5eing aternate of Pt#pe and 3t#pe siicon. It
consists of + M-nctions '1, '%, '+ the '1 and '+ operate in forard direction and '% operates in
re&erse direction and three terminas caed anode A, cathode Q , and a gate ". The operation
of SCR can 5e st-died hen the gate is open and hen the gate is positi&e ith respect to
cathode. @hen gate is open, no &otage is appied at the gate d-e to re&erse 5ias of the
M-nction '% no c-rrent fos thro-gh R% and hence SCR is at c-t off. @hen anode &otage is
increased '% tends to 5readon. @hen the gate positi&e, ith respect to cathode '+ M-nction
is forard 5iased and '% is re&erse 5iased .)ectrons from 3t#pe materia mo&e across
M-nction '+ toards gate hie hoes from Pt#pe materia mo&es across M-nction '+ toards
cathode. So gate c-rrent starts foing, anode c-rrent increase is in etreme# sma c-rrent
M-nction '% 5rea don and SCR cond-cts hea&i#. @hen gate is open thee 5rea o&er
&otage is determined on the minim-m forard &otage at hich SCR cond-cts hea&i#. 3o
most of the s-pp# &otage appears across the oad resistance. The hoding c-rrent is the
maim-m anode c-rrent gate 5eing open, hen 5rea o&er occ-rs.
PROCEDURE:
1. Connections are made as per circ-it diagram.
%. Qeep the gate s-pp# &otage at some constant &a-e
+. ar# the anode to cathode s-pp# &otage and note don the readings of &otmeter and
ammeter. Qeep the gate &otage at standard &a-e.
. A graph is dran 5eteen AQand IAQ.
TABULAR COLUMN:
AQ(! IAQ(A!
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Rel!:
V%>+ e!%#$:
1. @h# it is caed siicon controed rectifierV
%. Appications of SCRV
+. Ho can e sitch off SCRV
. Ho to sitch 2 an SCRV
8. @hat is meant 5# ThreshodV
@. UJT CHARACTERISTICS
AIM: To o5ser&e the characteristics of *'T and to cac-ate the Intrinsic Stand2ff Ratio (Z!.
COMPONENTS RE8UIRED:
S.N A**+"+! T*e R+$6e 8+$!%!
1. *'T %3%99 1
9. RPS (=+=! 1
3. R)SIST2RS 1==,1Q 1,1
4. Ammeter (=8=mA! 1
5. otmeter (=1=! 1
?. 5read5oard 6 connecting ires
CIRCUIT DIA7RAM:
THEORY:
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A *niM-nction Transistor (*'T! is an eectronic semicond-ctor de&ice that has on# one
M-nction. The *'T *niM-nction Transistor (*'T! has three terminas an emitter ()! and to
5ases ($1 and $%!. The 5ase is formed 5# ight# doped nt#pe 5ar of siicon. To ohmic
contacts $1 and $% are attached at its ends. The emitter is of pt#pe and it is hea&i# doped.
The resistance 5eteen $1 and $%, hen the emitter is opencirc-it is caed inter5ase
resistance.The origina -niM-nction transistor, or *'T, is
a simpe de&ice that is essentia# a 5ar of 3 t#pe semicond-ctor materia into hich P t#pe
materia has 5een diff-sed somehere aong its ength. The %3%99 is the most common#
-sed &ersion of the *'T.
S#l #, UJT
The *'T is 5iased ith a positi&e &otage 5eteen the to 5ases. This ca-ses a potentia drop
aong the ength of the de&ice. @hen the emitter &otage is dri&en approimate# one diode
&otage a5o&e the &otage at the point here the P diff-sion (emitter! is, c-rrent i 5egin to
fo from the emitter into the 5ase region. $eca-se the 5ase region is &er# ight# doped, the
additiona c-rrent (act-a# charges in the
5ase region! ca-ses (cond-cti&it# mod-ation! hich red-ces the resistance of the portion of
the 5ase 5eteen the emitter M-nction and the $% termina. This red-ction in resistance means
that the emitter M-nction is more forard 5iased, and so e&en more c-rrent is inMected.
2&era, the effect is a negati&e resistance at the emitter termina. This is hat maes the *'T
-sef-, especia# in simpe osciator circ-its.@hen the emitter &otage reaches p, thec-rrent startsto increase and the emitter &otage starts
to decrease.This is represented 5# negati&e sope of the characteristics hich is reffered to as
the negati&e resistance region,5e#ond the &ae#point ,R$1 reaches minim-m &a-e and this
region,)$ propotiona to I).
PROCEDURE:
1. Connection is made as per circ-it diagram.
%. 2-tp-t &otage is fied at a constant e&e and 5# &ar#ing inp-t &otage corresponding
emitter c-rrent &a-es are noted don.
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+. This proced-re is repeated for different &a-es of o-tp-t &otages.
. A the readings are ta5-ated and Intrinsic Stand2ff ratio is cac-ated -sing
Z (p$)! / $$
8. A graph is potted 5eteen )) and I) for different &a-es of $).
MODEL 7RAPH:
TABULAR COLUMN:
VBB1V VBB9V
VEB(V) IE(A) VEB(V) IE(A)
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Rel!:
VIVA 8e!%#$:
1. hat is *'TV
%. @hat is the specia characteristics of *'TV
+. 3ame the terminas of the *'T.
. Dra the characteristics of *'T
8. @hat is meant 5# negati&e resistance regionV
. TRANSISTOR BIASIN7
AIM: 1. Design of ampifier -sing coector to 5ase 5ias
%. To 0eas-re the &otage gain of a C) ampifier
+. To dra the fre-enc# response c-r&e of the C) ampifier
APPARATUS:
S.N# A**+"+! T*e R+$6e 8+$!%!
1. $'T Transistor $C8: 1
9. Resistance1Q,1.% Q,1== Q,
1,1,1
3. Reg-ated Poer S-pp# (=+=! 1
4. -nction generator and
CR2(=8!0HB, (=%=!0HB
1,1
5. Capacitors 1= J / %8, 1== J / %8
?. $read 5oard
DESI7N:
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Ass-me CC1%,IC8ma, [:8
RCis cac-ated 5# app#ing QL to coector to emitter
CC(ICI$!RCC)=
RC(CCC)!/(I$IC!1.1; Q\1.% Q
R$is cac-ated 5# app#ing QL to coector to 5ase
CC(ICI$!RC I$R$$)=
R$(CC(ICI$!RC$)!/ I$:
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emitter c-rrent. The inp-t signa is appied to 5ase termina of the transistor and ampifier
o-tp-t is taen across coector termina. A &er# sma change in 5ase c-rrent prod-ces a
m-ch arger change in coector c-rrent. @hen ) hafc#ce is fed to the inp-t circ-it, it
opposes the forard 5ias of the circ-it hich ca-ses the coector c-rrent to decrease, it
decreases the &otage more ). Th-s hen inp-t c#ce &aries thro-gh a ) hafc#ce,
increases the forard 5ias of the circ-it, hich ca-ses the coector c-rrent to increases th-s
the o-tp-t signa is common emitter ampifier is in o-t of phase ith the inp-t signa.
PROCEDURE:
1. Connect the circ-it as shon in circ-it diagram
%. Set cc 1%& and adM-st ce to 9& to operate the transistor in acti&e region.
+. App# the inp-t of %=m peatopea and 1 QHB fre-enc# -sing -nction
"enerator
. 0eas-re the 2-tp-t otage o (pp! Ta5-ate the readings in the ta5-ar form.
8. or potting the fre-enc# response the inp-t &otage is ept Constant at %=m pea
topea and the fre-enc# is &aried from 1=HB to 10HB *sing f-nction generator
9. A the readings are ta5-ated and &otage gain in d$ is cac-ated 5# *sing The
epression A&%= og1= (=/i!
The 5and idth of the ampifier is cac-ated from the graph
*sing the epression,
$andidth, $@f%f1
@here f1 oer c-toff fre-enc# of C) ampifier, and
@here f% -pper c-toff fre-enc# of C) ampifier
TABULAR COLUMN:
S.N# /RE UENCY H INPUT OUTPUT 7AIN A> V# B 90l# AV
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RESULT:
. CRO OPERATION AND ITS MEASUREMENTS
AIM: To o5ser&e sine a&e, s-are a&e and triang-ar a&eforms on the C.R.2. and to
meas-re ampit-de and fre-enc# of the a&eforms.
APPARATUS RE8UIRED:
CR2
-nction generator and pro5es
Te#":
An oscioscope is a test instr-ment hich aos -s to oo at the ]shape] of eectrica
signas 5# dispa#ing a graph of &otage against time on its screen. It is ie a &otmeter ith
the &a-a5e etra f-nction of shoing ho the &otage &aries ith time. A gratic-e ith a1cm grid ena5es -s to tae meas-rements of &otage and time from the screen. The graph,
-s-a# caed the trace, is dran 5# a 5eam of eectrons striing the phosphor Coating of the
screen maing it emits ight, -s-a# green or 5-e. This is simiar to the @a# a tee&ision
pict-re is prod-ced. 2scioscopes contain a &ac--m t-5e ith a cathode (negati&e eectrode!
at one end to emit eectrons and an anode (positi&e eectrode! to acceerate them so the#
mo&e rapid# don the t-5e to the screen. This arrangement is caed an eectron g-n. The
t-5e aso contains eectrodes to defect the eectron 5eam -p/don and eft/right. The
eectrons are caed cathode ra#s 5eca-se the# are emitted 5# the cathode and this gi&es the
oscioscope its f- name of cathode ra# oscioscope or CR2. A d-a trace oscioscope can
dispa# to traces on the screen, aoing -s to easi# compare the inp-t and o-tp-t of an
ampifier for eampe. It is e orth pa#ing the modest etra cost to ha&e this faciit#.
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/%6: I$!e"$+l Bl#' #, CRO
Se!!%$6 * +$ #%ll##*e:
2scioscopes are compe instr-ments ith man# contros and the# re-ire some care to
set -p and -se s-ccessf-#. It is -ite eas# to ]ose] the trace off the screen if contros are
set rong#.
There is some &ariation in the arrangement and a5eing of the man# contros. So,
the fooing instr-ctions ma# 5e adapted for this instr-ment.
1. Sitch on the oscioscope to arm -p (it taes a min-te or to!.
%. Do not connect the inp-t ead at this stage.
+. Set the AC/"3D/DC sitch (5# the ? I3P*T! to DC.
. Set the S@P/W? sitch to S@P (seep!.8. Set Trigger Le&e to A*T2.
9. Set Trigger So-rce to I3T (interna, the # inp-t!.
:. Set the ? A0PLII)R to 8/cm (a moderate &a-e!.
;. Set the TI0)$AS) to 1=ms/cm (a moderate speed!.
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A*l%!e is the maim-m &otage reached 5# the signa. It is meas-red in &ots.
Pe+' >#l!+6e is another name for ampit-de.
Pe+'2*e+' >#l!+6e is tice the pea &otage (ampit-de!. @hen reading an
oscioscope trace it is -s-a to meas-re peapea &otage.
T%e *e"%# is the time taen for the signa to compete one c#ce.
It is meas-red in seconds (s!, 5-t time periods tend to 5e short so miiseconds (ms!
and microseconds (Js! are often -sed. 1ms =.==1s and 1Js =.=====1s.
/"ee$ is the n-m5er of c#ces per second. It is meas-red in hertB (HB!, 5-t
fre-encies tend to 5e high so iohertB (HB! and megahertB (0HB! are often -sed.
1HB 1===HB and 10HB 1======HB.
otage4 &otage is shon on the &ertica #ais and the scae is determined 5# the ?Ampifier (ots/ di&! contro . -s-a# pea to pea &otage is meas-red 5eca-se it can 5e
read correct# e&en if the position of = is not non. The ampit-de is haf the pea to pea
&otage.
otage distance in cm ^ &ots/cm
Time period4 time is shon on the horiBonta ais and the scae is determined 5# the time
5ase (time/cm! contro. The time period is the time for one c#ce of the signa. The fre-enc#
is the n-m5er of c#ces per second, fre-enc# 1/time period.
Timedistance in cm ^ time / cm
P"#e"e:
1. Connect f-nction generator o-tp-t at the inp-t of C.R.2. at channe 1 or at channe %
%. Seect proper channe i.e. if signa is connected to channe 1 seect CH1 and if signa is
connected to channe % seect CH%
+. AdM-st Time /Di& no5 to get s-fficient time period dispacement of the a&e on the CR2
screen.
. @ith fine t-ning of time/Di& mae the a&eform stead# on screen as shon in fooing
fig
ig4 stead# a&eform8. *se triggering contros if a&eform is not sta5e
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9. Qeep &ot/di& no5 s-ch that a&eform is &isi5e on the screen itho-t cipping
:. 0eas-re PP reading aong #ais. This reading m-tipied ith &ot/di& gi&es pea to pea
ampit-de of the ac i/p a&e.
;. 0eas-re horiBonta di&ision of one compete c#ce. This di&ision m-tipied 5# time/di&
gi&es time period of the i/p a&e.
*)STI23S4
1. @hat is meant 5# CR2V
%. @hat is the principe 5ehind CR2 operationV+. Ho 5eams are formed in CR2V
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. @hat is caed defection in horiBonta and &ertica paneV
8. 3ame fe companies that man-fact-re CR2
10. /RE8UENCY RESPONSE O/ COMMON EMITTER AMPLI/IER
AIM:
To design the fre-enc# response of Common )mitter Ampifier and cac-ate the 5and
idth
COMPONENTS RE8UIRED:
S.N A**+"+! T*e R+$6e 8+$!%!
1. $'T Transistor $C1=: 1
9. Resistance1Q,+.+ Q,.: Q, :=
1,+,1,1,1
3. aria5e Resistance=1== Q
4. Reg-ated Poer S-pp# (=+=! 1
5. -nction generator and CR2
?. Capacitors 1= J / %8, 1== J / %8
@. $read 5oard
CIRCUIT DIA7RAM:
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THEORY:
The C) ampifier pro&ides high gain 6 ide fre-enc# response. The emitter ead is
common to 5oth inp-t and o-tp-t circ-its and is gro-nded. The emitter 5ase circ-it is forard
5iased. The coector c-rrent is controed 5# the 5ase c-rrent rather than emitter c-rrent. The
inp-t signa is appied to 5ase termina of the transistor and ampifier o-tp-t is taen across
coector termina. A &er# sma change in 5ase c-rrent prod-ces a m-ch arger change in
coector c-rrent. re-enc# response of an ampifier is defined as the &ariation of gain ith
respecti&e fre-enc#.
The gain of the ampifier increases as the fre-enc# increases from Bero ti it
5ecomes maim-m at oer c-toff fre-enc# and remains constant ti higher c-toff
fre-enc# and then it fas again as the fre-enc# increases.At o fre-encies the reactance
of co-ping capacitor Cc is -ite high and hence &er# sma part of signa i pass thro-gh
from one stage to the net stage. At high fre-encies the reactance of inter eectrode
capacitance is &er# sma and 5eha&es as a short circ-it.
This increases the oading effect on net stage and ser&ice to red-ce the &otage gain
d-e to these reasons the &otage gain drops at high fre-encies. At mid fre-encies the effect
of co-ping capacitors is negigi5e and acts ie short circ-it, here as inter eectrode
capacitors acts ie open circ-it. So, the circ-it 5ecomes resisti&e at mid fre-encies and the
&otage gain remains constant d-ring this range.
EGPERIMENT PROCEDURE:
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1. Connect the circ-it as shon in circ-it diagram
%. Set cc 1=& and adM-st ce to 8& to operate the transistor in acti&e region.
+. App# the inp-t of %=m peatopea and 1 QHB fre-enc# -sing -nction
"enerator
. 0eas-re the 2-tp-t otage o (pp! Ta5-ate the readings in the ta5-ar form.
8. or potting the fre-enc# response the inp-t &otage is ept Constant at %=m pea
topea and the fre-enc# is &aried from 1==HB to 10HB *sing f-nction generator
9. A the readings are ta5-ated and &otage gain in d$ is cac-ated 5# *sing The
epression A&%= og1= (=/i!
:. A graph is dran 5# taing fre-enc# on ais and gain in d$ on #ais 2n Semiog
graph.
OBSERVATIONS:
S.N# /RE UENCY H INPUT OUTPUT 7AIN A> V# B 90l# AV
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RESULT:
PRELAB 8UESTIONS:
1. @hat are the ad&antages and disad&antages of singestage ampifiersV
%. @h# gain fas at H and LV
+. )pain the f-nction of emitter 5#pass capacitor, CeV
. Ho the 5and idth i effect as more n-m5er of stages are cascadedV
8. Define fre-enc# responseV
9. @hat is the phase difference 5eteen inp-t and o-tp-t a&eforms of a C)
ampifierV
:. @hat is )ar# effectV
11. /RE8UENCY RESPONSE O/ EMITTER /OLLO&ER
AIM:
To design the fre-enc# response of )mitter fooer Ampifier and cac-ate the 5and
idth
COMPONENTS RE8UIRED:
S.N# A**+"+! T*e R+$6e 8+$!%!
1. $'T Transistor $C1=: 1
9. Resistance1Q,+.+ Q,.: Q, :=
1,+,1,1,1
3. aria5e Resistance=1== Q
4. Reg-ated Poer S-pp# (=+=! 1
5. -nction generator and CR2
?. Capacitors 1= J / %8, 1== J / %8
@. $read 5oard
CIRCUIT DIA7RAM:
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THEORY:
In commoncoector ampifier the inp-t is gi&en at the 5ase and the o-tp-t is taen at
the emitter. In this ampifier, there is no phase in&ersion 5eteen inp-t and o-tp-t. The inp-t
impedance of the CC ampifier is &er# high and o-tp-t impedance is o. The &otage gain is
ess than -nit#. Here the coector is at ac gro-nd and the capacitors -sed m-st ha&e a
negigi5e reactance at the fre-enc# of operation. This ampifier is -sed for impedance
matching and as a 5-ffer ampifier. This circ-it is aso non as emitter fooer. The mostcommon -se of the emitter fooer is as a circ-it, hich performs the f-nction of impedance
transformation o&er a ide range of fre-encies.
EGPERIMENT PROCEDURE:
1. Connect the circ-it as shon in circ-it diagram
%. Set cc 1=& and adM-st ce to 8& to operate the transistor in acti&e region.
+. App# the inp-t of %=m peatopea and 1 QHB fre-enc# -sing -nction
"enerator
. 0eas-re the 2-tp-t otage o (pp! Ta5-ate the readings in the ta5-ar form.
8. or potting the fre-enc# response the inp-t &otage is ept Constant at %=m pea
topea and the fre-enc# is &aried from 1==HB to 10HB *sing f-nction generator
9. A the readings are ta5-ated and &otage gain in d$ is cac-ated 5# *sing The
epression A&%= og1= (=/i!
:. A graph is dran 5# taing fre-enc# on ais and gain in d$ on #ais 2n Semiog
graph.
;. The $andidth of the ampifier is cac-ated from the graph -sing the )pression,
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0ode graph4
B+$ V# B 90l# AV
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RESULT:
VIVA 8UESTIONS:
1. @hat is maim-m &otage gain of CC ampifier
9. @h# gain fas at o and high fre-enciesV
3. @hat is transition fre-enc#V
4. Ho +D$ is fo-nd in semiog graphV
5. @hat are the characteristics of emitter fooerV
19. /RE8UENCY RESPONSE O/ COMMON SOURCE /ET AMPLI/IER
AIM:
To design and get the fre-enc# response of common so-rce ampifier
COMPONENTS RE8UIRED:
S.N# A**+"+! T*e R+$6e 8+$!%!
1. )T Transistor %3+
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THEORY:
The )T is a t#pe of transistor common# -sed for ea signa ampification. The
de&ice can ampif# anaog or digita signas. It can aso sitch DC or f-nction as an
osciator. In the )T c-rrent fos aong a semicond-ctor path caed the channe. At one end
of the channe, there is an eectrode caed so-rce.
At the other end of the channe there is an eectrode caed the drain. re-enc#
response of an ampifier is defined as the &ariation of gain ith respecti&e fre-enc#. The
gain of the ampifier increases as the fre-enc# increases from Bero ti it 5ecomes maim-m
at oer c-toff fre-enc# and remains constant ti higher c-toff fre-enc# and then it fas
again as the fre-enc# increases.
At mid fre-encies the effect of co-ping capacitors is negigi5e and acts ie short
circ-it, hereas inter eectrode capacitors acts ie open circ-it. So, the circ-it 5ecomes
resisti&e at mid fre-encies and the &otage gain remains constant d-ring this range
EGPERIMENT PROCEDURE:
1. Connections are made as per the circ-it diagram.
%. Set dd 1=& and adM-st the ds to 8&.
+. A signa of % QHB fre-enc# and %=m peatopea is appied at the inp-t of
ampifier.
. 2-tp-t is taen at drain and gain is cac-ated 5# -sing the epression, A&=/i
8. otage gain in d$ is cac-ated 5# -sing the epression, A&%=og 1=(=/i!
9. Pot A& &s. re-enc#, The $andidth of the ampifier is cac-ated.
OBSERVATIONS:
S.N# /RE UENCY H INPUT OUTPUT 7AIN A> V# B 90l# AV
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RESULT:
PRELAB 8UESTIONS:
1. @hat is the difference 5eteen )T and $'TV
%. )T is -nipoar or 5ipoarV
+. Dra the s#m5o of )TV
. @hat are the appications of )TV
8. )T is &otage controed or c-rrent controedV
ADDITIONAL EGPERIMENTS
1. BRID7E RECTI/ER
AIM: To cac-ate the rippe factor of a 5ridge rectifier, ith and itho-t fiters.
COMPONENTS RE8UIRED:
S.N# A**+"+! T*e R+$6e 8+$!%!
1 Diode I3==1 1
% Resistance := 1
+ Reg-ated Poer S-pp# (=+=! 1
CR2 1
8 Transformer 9=9 1
9 Capacitor : 1
: $read 5oard and connecting ires
THEORY:
The 5ridge rectifier is aso a f-a&e rectifier in hich fo-r pn diodes are connectedin the form of a 5ridge fashion. The $ridge rectifier has high efficienc# hen compared to
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hafa&e rectifier. D-ring e&er# haf c#ce of the inp-t, on# to diodes i 5e cond-cting
hie other to diodes are in re&erse 5ias.
CIRCUIT DIA7RAM:
PROCEDURE:
1. Connections are made as per the circ-it diagram.%. Connect the ac main to the primar# side of the transformer and secondar# side to the 5ridge
rectifier.
+. 0eas-re the ac &otage at the inp-t of the rectifier -sing the m-ti meter.
. 0eas-re 5oth the ac and dc &otages at the o-tp-t of the $ridge rectifier.
8. ind the theoretica &a-e of dc &otage 5# -sing the form-a.
M#el e,#":
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T+l+" #l$:
S.N# R L V+ V
R%**le /+!#"
V+V
(
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9. INPUT AND OUTPUT CHARACTERISTICS O/ TRANSISTOR IN CB
CON/I7URATION
AIM: To dra the inp-t and o-tp-t characteristics and to determine the h#5rid parameters of
a gi&en transistor in C20023 $AS) config-ration.
COMPONENTS RE8UIRED:
S.N# A**+"+! T*e R+$6e 8+$!%!
1. Transistor $C1=: 1
%. Resistance 1Q 1
+. Reg-ated Poer S-pp# (=+=! 1
. Ammeter (=1==!mA %
8. otmeter (=1=! %
9. $read 5oard and connecting ires
EGPERIMENT PROCEDURE:
INPUT CHARACTERISTICS:
1. Connections are made as per the circ-it diagram.
%. or potting the inp-t characteristics, the o-tp-t &otage C$ is ept constant at =
and for different &a-es of )$ note don the &a-es of I).
+. Repeat the a5o&e step eeping C$ at %, .A the readings are ta5-ated.
. A graph is dran 5eteen )$ and I) for constant C$.
OUTPUT CHARACTERISTICS:
1. Connections are made as per the circ-it diagram.
%. or potting the o-tp-t characteristics, the inp-t I) is ept constant at 1=m A and
for different &a-es of C$, note don the &a-es of IC.
+. Repeat the a5o&e step for the &a-es of I) at %= mA, = mA, and 9= mA, a the
readings are ta5-ated.
. A graph is dran 5eteen C$ and Ic for constant I)
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CIRCUIT DIA7RAM:
MODEL 7RAPH:
INPUT CHARACTERISTICS:
OUTPUT CHARACTERISTICS:
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RESULT:
PRE LAB 8UESTIONS:
1. @hat are the appications of C$ config-rationV
9. Dra different transistor s#m5os.
3. $'T is a c-rrent controed de&ice. '-stif#.
4. @hat happens hen e change the 5iasing condition of the transistorsV
5. In hich case C$ config-ration is -sing.