EDC Lab 3rdsem

Department of Electrical & Electronics Engineering

CLASS : II YEAR EEE

SEMESTER : III SEM

SUBJECT CODE : 131351

SUBJECT : ELECTRONIC DEVICES

AND CIRCUITS LAB

131351CIRCUITS AND DEVICES LABORATORY

LIST OF EXPERIMENTS:

S. No. TITLE

1.

2.

3..

4.

5.

6.

7.

8

9.

10

11.

12.

Characteristics of PN Junction diode Zener diode and Rectifier Applications

Bipolar Junction transistor -CE, CB, CC characteristics

Characteristics of FET

Characteristics & UJT

Characteristics of SCR , DIAC and TRIAC

Characteristics of Photo diode, phototransistor

Single phase half wave and full wave rectifiers with inductive and capacitive

filters.

Characteristics of BJT Amplifier frequency response

Characteristics of FET amplifier frequency response

Characteristics of Class B amplifier – Darlington pair

Characteristics of Differential amplifier

PSPICE modeling of electronic circuits

Ex. No .1a

CHARACTERISTICS OF PN JUNCTION DIODE

AIM:

To draw the forward and reverse biased characteristics of PN junction diode and to find

cut in voltage, break down voltage ,static resistance and dynamic resistance .

APPARATUS REQUIRED:

S.No Components Type/Range Quantity

1 Regulated power supply (0-30) V 1

2 Ammeter

(0-30) mA 1

(0-30) µA 1

3 Voltmeter

(0-1) V 1

(0-10) V 1

3 Diode IN4001 1

4 Resistor

1 KΩ 1

5 Bread Board

- 1

6 Connecting Wire - As per required

PROCEDURE:

FORWARD BIAS:

1. Connect the circuit as per the diagram.

2. Vary the applied voltage V in steps of 0.1V.

3. Note down the corresponding Ammeter readings I.

4. Plot a graph between V & I

OBSERVATIONS:

1. Find the d.c (static) resistance = V/I.

2. Find the a.c (dynamic) resistance r = δV / δI (r = ∆∆∆∆V/∆∆∆∆I) = 12

12

II

VV

−

−.

3. Find the forward voltage drop = [Hint: it is equal to 0.7 for Si and 0.3 for Ge]

REVERSE BIAS:


2. Vary the applied voltage V in steps of 1.0V.



5. Find the dynamic resistance r = δδδδV / δδδδI.

FORMULA FOR REVERSE SATURATION CURRENT (IO):

Io = ∂∂∂∂I/[exp(∂∂∂∂V/ηηηηVT)]-1

Where

+

+

(0-500)µA

+ -

+

-

(0-30)V +

-

(0-30)V

VT is the voltage equivalent of Temperature = kT/q

k is Boltzmann’s constant, q is the charge of the electron and T is the temperature in

degrees Kelvin.

η =1 for Silicon and 2 for Germanium

CIRCUIT DIAGRAM:

FORWARD BIAS:

TABULAR COLUMN:

FORWARD BIAS:

REVERSE BIAS:

S.No. VOLTAGE

(In Volts)

CURRENT

(In mA)

1KΩ a

TABULAR COLUMN:

REVERSE BIAS:

S.No. VOLTAGE (In Volts) CURRENT (In µA)

MODEL GRAPH

If (mA)

I2

Vb I1

( Volts) V1 V2 Vf (Volts)

Ic(µa)

RESULT: Thus the forward and reverse biased characteristics of PN junction diode were drawn

and also cut in voltage, break down voltage, static resistance and dynamic resistance were

calculated.

Ex.No.1 b

CHARACTERISTICS OF ZENER DIODE

AIM:

To plot VI characteristics of zener diode and (i) find break down voltage in reverse

biased condition(ii) To calculate static resistance and dynamic resistance in both forward and

reverse bias condition.

APPARATUS REQUIRED:



2 Ammeter

(0-30) mA 1

(0-250) µA 1

3 Voltmeter

(0-30) V 1

(0-2) V 1

3 Zener Diode BZV10 1

4 Resistor

1 KΩ 1

5 Bread Board

- 1


FORMULA USED:

Static Resistance R =V/I

Dynamic Resistance =∆V/∆I

PROCEDURE:

FORWARD BIAS:

1. Connect the circuit as per the circuit diagram.

2. Vary the power supply in such a way that the readings are taken in steps of 0.1V in the

voltmeter till the needle of power supply shows 30V.

3. Note down the corresponding ammeter readings.

4. Plot the graph :V (vs) I.

5. Find the dynamic resistance r = ∆V/∆I.

REVERSE BIAS:


2. Vary the power supply in such a way that the readings are taken in steps of 0.1V in the

voltmeter till the needle of power supply shows 30V.



5. Find the dynamic resistance r = ∆V/∆I.

(0-30) V

+ -

+

-

+

-

(0-30) V

CIRCUIT DIAGRAM:

FORWARD BIAS:

BZV10 A

K

TABULAR COLUMN:

FORWARD BIAS:

S.No. VOLTAGE (In Volts) CURRENT (In mA)

REVERSE BIAS:

1

1KΩ a

(0-30)mA

TABULAR COLUMN:

REVERSE BIAS:

S.No. VOLTAGE (In Volts) CURRENT (In µA)

RESULT:

Thus VI characteristics of zener diode was drawn and breakdown voltage , static

resistance and dynamic resistance were calculated.

Ex.No.2 a

CHARACTERISTICS OF CE CONFIGURATION

AIM:

To study the input and output characteristics of BJT in CE configuration.

APPARATUS REQUIRED:



2

Ammeter

(0–10)mA 1

(0–1)A 1

3

Voltmeter

(0–30)V 1

(0–2)V 1

4 Transistor CL - 100S 1

5

Resistor

10 KΩ 1

1 KΩ 1

6 Bread Board - 1

7 Connecting Wires - As per required

PROCEDURE:

INPUT CHARECTERISTICS:


2. Set VCE ,vary VBE in regular interval of steps and note down the corresponding

IB reading. Repeat the above procedure for different values of VCE.

3. Plot the graph: VBE Vs IB for a constant VCE.

OUTPUT CHARACTERISTICS:

1.Connect the circuit as per the circuit diagram.

2.Set IB, Vary VCE in regular interval of steps and note down the corresponding IC

reading. Repeat the above procedure for different values of IB.

3.Plot the graph: VCE Vs IC for a constant IB.

CIRCUIT

DIAGRAM

MODEL GRAPH:

INPUT CHARACTERISTICS: OUTPUT CHARACTERISTICS:

TABULAR COLUMN:

INPUT CHARACTERISTICS:

VCE=1V VCE=2V

VBE(V) IB(µA) VBE(V) IB(µA)


VCE = 0V

VCE = 5V

IB

µA mA

VBE(V) VCE(V)

0 0

IB=60µA

IB=40µA

IB=20µA

IC

IB=20µµµµA IB=40µµµµA

VCE(V) IC(mA) VCE(V) IC(mA)

RESULT: Thus the input and output characteristics of BJT in Common Emitter (CE) configuration

were drawn.

Ex.No.2b

CHARACTERISTICS OF CB CONFIGURATION USING BJT

AIM:

To study the input and output characteristics o f BJT in CE configuration.

APPARATUS REQUIRED:



2 Ammeter (0–10) mA 1

(0–1) A 1

3

Voltmeter

(0–30) V 1

(0–2) V 1

4 Transistor CL - 100S 1

5

Resistor

10 kΩ 1

1 kΩ 1

6 Bread Board - 1


PROCEDURE:


It is the curve between emitter current IE and emitter-base voltage VBE at constant collector-

base voltage VCB.


2. Set VCE=5V, vary VBE in steps of 0.1V and note down the corresponding IB. Repeat the

above procedure for 10V, 15V.

3 Plot the graph VBE Vs IB for a constant VCE.


It is the curve between collector current IC and collector-base voltage VCB at constant emitter

current IE. 1. Connect the circuit as per the circuit diagram.

2. Set IB=20µA, vary VCE in steps of 1V and note down the corresponding IC. Repeat

the above procedure for 40µA, 80µA, etc.

3. Plot the graph VCE Vs IC for a constant IB.

TABULAR COLUMN:


S.No. VCB = V VCB = V VCB = V

VEB

(V)

IE

(µµµµA)

VEB

(V)

IE

(µµµµA)

VEB

(V)

IE

(µµµµA)


S.No. IE= mA IE= mA IE= mA

VCB

(V)

Ic

(mA)

VCB

(V)

Ic

(mA)

VCB

(V)

Ic

(mA)

MODEL GRAPH:



RESULT:Thus the input and output characteristics of BJT in Common Base(CB) configuration

were drawn.

Ex.No.4b

CHARACTERISTICS OF UNIJUNCTION TRANSISTOR

AIM:To determine the characteristics of UJT

APPARATUS REQUIRED:



2 Ammeter (0-30) mA 1

3

Voltmeter

(0–30) V 1

(0–10) V 1

4 UJT 2N2646 1

Resistor 1 kΩ 2

6 Bread Board - 1


FORMULA FOR INTRINSIC STANDOFF RATIO:

η = VP - VD/ VB1B2., where VD = 0.7V.

PROCEDURE: 1.Connect the circuit as per the circuit diagram.

2.Set VB1B2 = 0V, vary VEB1 , & note down the readings of IE & VEB1

3.Set VB1B2 = 10V , vary VEB1 , & note down the readings of IE & VEB1

4.Plot the graph : IE Versus VEB1 for constant VB1B2.

5.Find the intrinsic standoff ratio.

CIRCUIT DIAGRAM:

TABULAR COLUMN:

VB1B2 = 0 V VB1B2 = 10 V

VEB1 (V) IE (mA) VEB1 (V) IE (mA)

Peak Voltage=………………….V

VP - VD/ VB1B2 η

MODEL GRAPH:

RESULT:

Thus the characteristics of UJT were obtained and its operation was studied.

Ex.No.4a

VI CHARACTERSTICS OF SCR

AIM:

To determine the VI characteristics of given SCR at different gate currents.

APPARATUS REQUIRED:


1 SCR SN102 1

2 Regulated power

supply (0-30) V 1

3

Ammeter

(0-100) mA 1

(0-10) mA 1

4 Voltmeter (0-50) V 1

5

Resistor

560 Ω 1

1 kΩ 1

6 Bread Board - 1


PROCEDURE:

1. Make the connections as per the circuit diagram.

2. Switch ON the power supply.

3. Keep IG as constant.

4. Vary the voltage VAK step by step from 0V and note its corresponding anode

current(IA)

5. Draw the graph in between VAK and IA.

6. Repeat the above procedure of 4 and 5 for different values of IG.

7.Switch OFF the power supply.

8. Disconnect the components.

CIRCUIT DIAGRAM:

TABULAR COLUMN:

S.No IG = 0.1 mA IG = 0.2 mA

VAK (Volts) IA (mA) VAK (Volts) IA (mA)

MODEL GRAPH:

RESULT :Thus VI characteristics of SCR for different values of IG are determined.

Ex.No.3a

CHARACTERISTICS OF JUNCTION FIELD EFFECT TRANSISTOR

AIM:

To study the characteristics of JFET.

APPARATUS REQUIRED :


1 JFET BFW11 1


3 Ammeter (0-30)mA 1

4

Voltmeter

(0-30) V 1

(0-10) V 1

5

Resistor

68 kΩ 1

1 kΩ 1

6 Bread Board - 1


PROCEDURE:

DRAIN CHARACTERISTICS:


2. Set the gate voltage VGS = 0V.

3. Vary VDS in steps of 1 V & note down the corresponding ID.

4. Repeat the same procedure for VGS = -1V.

5. Plot the graph VDS Vs ID for constant VGS.

OBSERVATIONS

1. d.c (static) drain resistance, rD = VDS/ID.

2. a.c (dynamic) drain resistance, rd = ∆∆∆∆VDS/∆∆∆∆ID.

3. Open source impedance, YOS = 1/ rd.

TRANSFER CHARACTERISTICS:


2. Set the drain voltage VDS = 5 V.

3. Vary the gate voltage VGS in steps of 1V & note down the corresponding ID.

4. Repeat the same procedure for VDS = 10V.

5. Plot the graph VGS Vs ID for constant VDS.

FET PARAMETER CALCULATION:

Drain Resistance rd =GS

D

DSV

I

V

∆

∆ Ω

Transconductance gm = DS

GS

DV

V

I

∆

∆

Amplification factor µ=rd . gm

CIRCUIT DIAGRAM:

TABULAR COLUMN:


VGS = 0V VGS = -1V

VDS (V) ID(mA) VDS (V) ID(mA)

I D (

mA

) TRANSFER CHARACTERISTICS:

MODEL GRAPH:


VDS =5volts VDS = 10volts

VGS (V) ID(mA) VGS (V) ID(mA)

0

VGS = 0V

VGS = -1V

VGS = -2V

VGS = -3V

VDS (volts)

TRANSFER CHARACTERISTICS:

ID(mA)

VDS =Const

VGS (V)

RESULT:

Thus the drain and transfer characteristics of JFET was obtained and the graph is

plotted.

Ex.No.5 a VI CHARACTERSTICS OF DIAC

AIM: To determine the VI characteristics of DIAC and find out its breakdown voltage.



1 DIAC D3202 1




5 Resistor 470 Ω 1

6 Bread Board - 1


PROCEDURE:



3. Vary the applied voltage step by step.

4. Take its corresponding ammeter readings.

5. Repeat the above procedure of 3 and 4 for reverse biasing also.

6. Draw the graph in between voltage and current.

7. Note its breakdown voltage.

8. Switch OFF the power supply.


CIRCUIT DIAGRAM:

FORWARD BIAS:

TABULAR COLUMN:

S.No VF (Volts) IF(mA)

REVERSE BIAS:

TABULAR COLUMN:

S.No VR (Volts) IR (mA)

MODEL GRAPH:

RESULT:

The VI characteristics of DIAC are determined .The breakdown voltage of DIAC is

…………. Volts.

Ex.No.5b V-I CHARACTERSTICS OF TRIAC

AIM: To determine the VI characteristics of given TRIAC at different gate current.



1 TRIAC T2801 1


3

Ammeter

(0-100)mA 1

(0-10)mA 1


5 Resistor 470 Ω 2

6 Bread Board - 1


PROCEDURE:



3. Keep the gate current (IG) as constant.

4. Vary the applied terminal voltage (VT) step by step from 0 V.

5. Take its corresponding ammeter reading (IT).

6. Repeat the above procedures of 3 , 4 and 5 for different gate currents.

7. Draw the graph in between voltage VT and current IT.

8. Note its breakdown voltage.

9. Switch OFF the power supply.


CIRCUIT DIAGRAM:

TABULAR COLUMN:

S.No IG = 2 mA IG = 2 mA

VT (Volts) IR (mA) VT (Volts) IR (mA)

MODEL GRAPH:

RESULT:

The VI characteristics of TRIAC are determined with different gate currents .The

breakdown voltage of TRIAC is …………. Volts and breakdown current is …….mA.

Ex.No.6

CHARACTERISTICS OF PHOTO-DIODE AND PHOTOTRANSISTOR

AIM:

1. To study the characteristics of a photo-diode.

2. To study the characteristics of phototransistor.

APPARATUS REQUIRED:


1 Photo diode - 1

2 Regulated power

supply (0-30) V 2



5 Resistor 1 KΩ 2

6 Bread Board - 1

7 Photo transistor - 1


PROCEDURE:

PHOTO DIODE:

1. Rig up the circuit as per the circuit diagram.

2. Maintain a known distance (say 5 cm) between the DC bulb and the photo diode.

3. Set the voltage of the bulb (say, 2V), vary the voltage of the diode insteps of 1V

and note down the corresponding diode current, Ir.

4. Repeat the above procedure for the various voltages of DC bulb.

5. Plot the graph: VD vs. Ir for a constant DC bulb voltage.

PHOTOTRANSISTOR:

1. Rig up the circuit as per the circuit diagram.

2. Maintain a known distance (say 5 cm) between the DC bulb and the

phototransistor.

3. Set the voltage of the bulb (say, 2V), vary the voltage of the diode in steps of 1V

and note down the corresponding diode current, Ir.

4. Repeat the above procedure for the various values of DC bulb.

5. Plot the graph: VD vs. Ir for a constant bulb voltage.

CIRCUIT DIAGRAM IN PHOTODIODE:

:

TABULAR COLUMN

MODEL GRAPH:

CIRCUIT DIAGRAM IN PHOTOTRANSISTOR:

S.No. VOLTAGE

(In Volts)

CURRENT

(In mA)

TABULAR COLUMN:

MODEL GRAPH:

S. No. VCE

(in Volts)

IC

(in mA)

RESULT:

Thus the characteristics of photo diode and phototransistor are studied.

Ex.No.6

SINGLE PHASE HALF WAVE AND FULL WAVE RECTIFIER

WITH AND WITHOUT FILTER

AIM: To study the waveform o the single phase half wave and full wave rectifier with and

without filter



1 Diode IN4001 1

2 Capacitor 1µf 2

3. CRO - 1


5 Resistor 1KΩ 1

6. Transformer 230V/6V 1

7 Bread Board - 1


FORMULA FOR HALF WAVE RECTIFIER

1.WITHOUT FILTER:

(a)Vdc=Vm/π

(b)Vrms= Vm/2

(c)Ripple factor / = (Vrms Vdc)2

2.WITH FILTER:

(a) Vdc=Vm=Vrpp/2

(b) Vrms=Vrpp/2√3

(c)Ripple Factor= Vrms/ Vdc

3.BRIDGE RECTIFIER:

(a) Vdc=2Vm/π

(b) Vrms= Vm /√2

(c)Ripple Factor= = (Vrms Vdc)2-1

Vdc=Average value of dc voltage

Vm=Maximum supply voltage

Vrpp=RMS value of the voltage

Vrms=Ripple voltage

PROCEDURE:

SINGLE PHASE HALF WAVE RECTIFIER:

1.Connections are made as per circuit diagram

2.Ac supply is switched on

3.Note down the input and output waveforms in CRO for filter and without filter connections

4.Then the graph is plotted according to the input output waveforms

SINGLE PHASE FULL WAVE RECTIFIER:

1.Connections are made as per circuit diagram

2.Ac supply is switched on

3.Set the input and note down the input and output waveforms in CRO



CIRCUIT DIAGRAM:

HALF WAVE RECTIFIER (WITHOUT FILTER):

WITH FILTER:

FULL WAVE RECTIFIER (WITH FILTER):

TABULAR COLUMN

SINGLE PHASE HALF WAVE RECTIFIER

WITHOUT FILTER:

WITH FILTER:

FULL WAVE RECTIFIER

WITHOUT FILTER

WITH FILTER:

S.NO Vm(v)

Vdc(V) Vrms

(V) Resistance Ripple

factor

S.NO Vm(v)

Vdc(V) Vrms

(V) Resistance Vrpp(V) Ripple

factor

S.NO Vm(v)

Vdc(V) Vrms

(V) Resistance Ripple

factor

S.NO Vm(v)

Vdc(V) Vrms

(V) Resistance Vrpp(V) Ripple

factor

MODEL GRAPH:

RESULT: Thus the waveforms characteristics of half wave and full wave rectifier were

Vdc,

Vrms and ripple factor were calculated.

Ex.No.6

FREQUENCY RESPONSE OF BJT AMPLIFIER

AIM: To obtain the frequency response of BJT amplifier



1 Transistor BC107 1

2 Capacitor 4.7µf 1

3. Capacitor 0.001mf 1

4. Inductor 100mf/25v 1

5. CRO 1mf/25V 1

6 Breadboard - 1

7 Resistor 12KΩ 1

8. Transformer 230V/6V 1

9 Resistor 6KΩ

1

10 Single generator


PROCEDURE:

1.Circuit Connections are given as per the circuit diagram

2.A required voltage through fn is supplied into circuit.

3.The output is viewed through CRO

4.Using CRO Amplitude and Time periods are calculated

5.From the Time period of Oscillations the frequency is calculated

6. The graph is drawn with the plotted reading

Frequency = 1/Time period

CIRCUIT DIAGRAM

TABULAR COLUMN:

S.No FREQUENCY INPUT OUTPUT Av =Vo/Vi GAIN in db

(20logAv)

MODELGRAPH:

RESULT: Thus the frequency response curve of the amplifier was drawn and the gain is

calculated

Exp.No.6

CHARACTERISTICS OF FET AMPLIFIER FREQUENCY RESPONSE

AIM: To determine the parameter of the single stage JFET amplifier (common –drain amplifier)

1.Band width 2.Midband Gain 3.Input and Output Impedance



1 Power supply - 1

2 CRO - 1

3. Capacitor 1µf 1

4. Capacitor 31.8µf 1

5. CRO 1mf/25V 1

6 Breadboard - 1

7 Resistor 1KΩ 1

8. Resistor 100 KΩ 1

9 Resistor

600Ω

1

10 Resistor 1.2 kΩ 1

10 Function generator - 1


12. Capacitor 5.835µf 1

PROCEDURE:

1.Circuit Connections are given as per the circuit diagram

2.A required voltage through fn is supplied into circuit.

3.The output is viewed through CRO

4.Using CRO Amplitude and Time periods are calculated

5.From the Time period of Oscillations the frequency is calculated

6. The graph is drawn with the plotted reading

Frequency = 1/Time period

CIRCUIT DIAGRAM:

TABULAR COLUMN:

S.No FREQUENCY INPUT OUTPUT Av =Vo/Vi GAIN in db

(20logAv)

MODEL GRAPH:

RESULT: Thus the frequency response curve of the FET amplifier was drawn and the gain is

calculated

Exp.No.7

CHARACTERISTICS OF CLASS-B P OWER AMPLIFIER

AIM: To design and construct a Class-B power Amplifier and to determine its efficiency.



1. Power supply (0-30)V 1

2. CRO (0-30)V 1

3. Function generator (0-1)MHz 1

PROCEDURE:

1. Connect the Circuit as per the circuit diagram,

2. Set Vs=50mV(say),using the signal generator.

3.Keeping the INPUT voltage constant ,Vary the frequency from 0 Hz to 1 Hz in Regular steps

and note down the corresponding output voltage.

4.Plot the graph : gain(db) Vs frequency

5, Find the input and output Impedance

Input Impedance,

Zi=Vi Rs/(Vs+Vi)

Output impedance,

Zo= Vload – Vno load/(V load) *100

6.Calculate the Bandwidth from the graph.

7.Note down the phase angle ,bandwidth,input and output impedance.

8.Calculate the efficiency,n=Po/Pin.

CIRCUIT DIAGRAM:

TABULAR COLUMN:

S.No Vo(volts) Gain=Vo/Vs Gain(db)=20log(Vo/Vs)OUTPUT Po=Vo2/2RL n%

MODEL GRAPH:

RESULT: Thus the efficiency of the Class-B power amplifier curve is drawn successfully

Exp.No.8

CHARACTERISTICS OF DIFFERENTIAL AMPLI FIER

AIM: To design and construct a Class-B power Amplifier and to determine its efficiency.



1 RPS (0-30)V - 1

2 Signal generator - 1

3. Capacitor 470µf 1

5. CRO 1mf/25V 1

6 Breadboard - 1

7 Transistor BC107 1

8. Resistor 3.9 KΩ 1

9

DCB

600Ω

1

10 DRB 1.2 kΩ 1

FORMULA

Common mode rejection ratio=Ad/Ac

Ad=Differential mode gain

Ac=Common mode gain

where Ad=Vo/Vd, Vo=output voltage measured.

Vd=V1 –V2 ;V1 V2= input voltage

Ac=Vo/Vc , Vc=(V1+V2)/2.

PROCEDURE:

DIFFERENTAIL MODE:

1. Connect the Circuit as per the diagram,

2.Set V1=50mV and V2=65Mv using the signal generator.

3.Find the corresponding output voltages across V01 and V02 using CRO.

4.Calculate Common mode rejection ratio using the given formula.

COMMON MODE: 1.Connect the circuit as per the diagram .

2.Set V1=50Mv using the signal generator .

3.Find the output voltage across V0 using multimeter.

4.Calculate the common mode rejection ratio using the given

formula

CIRCUIT DIAGRAM:

DIFFERENTIAL MODE:

COMMON MODE:

TABULAR COLUMN:

DIFFERENTIAL MODE:

S.No V1 V2 Output voltage Vd=V1-V2

Ad=V0/Vd

COMMON MODE:

S.No Input voltage Output

voltage

Vd=V1-V2

Vc=(V1+V2)/2.

Ac=Vo/Vc ,

RESULT: Thus the differential amplifier was verified for common mode and differential

mode configuration Further common mode rejection ratio was found

Exp.No.8

P SPICE- MODELLING OF ELECTRONIC CIRCUITS

AIM: To draw the PSPICE – modeling of electronics circuits using PCM

AP PARATUS REQUIRED:

1.P SPICE software

2.PCM

PROCEDURE:

1.Start - All programs- read family – Capture lite edition

2.Window will open .

3.Open New- Project.

4.Pspice Project Dialog Box will Open Create new

5.Take the symbols from the library.

6. Give the values for all components

7. Set the (frequency) time period for required waveform.

8.Fit the voltage marker to measure the voltage at I/p and O/p .

10.Do the run process to get the output.

CIRCUITDIAGRAM:

MODEL GRAPH:

RESULT : Thus Pspice –modelling of electronic devices is drawn and output is executeed

successfully

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EDC Lab 3rdsem