Charge Long-range magnetic order
Implemented by Coupling
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
1. Metals: AMR,GMR2. Semiconductors3. Insulators
Standard substratesRoom temperature
Grown on
Boston Feb2012
Institute of Physics (Prague) – University Nottingham COBRA Inter-University Eindhoven -ORNL
DopingTemperature
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
GaAs
Ga
As
(Ga,Mn)As
Ga
As
Mn
MnAs
FerromagneticSemiconductor
III-V FM TC (K) AFM TN (K)FeN 100FeP 115FeAs 77FeSb 100-220GdN 72GdP 15GdAs 19GdSb 27
II-VI FM TC (K) AFM TN (K)MnO 122MnS 152MnSe 173MnTe 323EuO 67EuS 16EuSe 5EuTe 10
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
Intrinsic III-V and II-VI semiconductors
Maca et al., JMMM 324, 1606 (2012)
Large SOC Large momentLarge moment
Large SOC Large momentLarge moment
Schick et al., PRB 81, 212409 (2010)
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
Large SOC Large momentLarge moment
Large SOC Large momentLarge moment
Schick et al., PRB 81, 212409 (2010)
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
T15 Room 213
Helena Reichlova
Large SOC Large momentLarge moment
Large SOC Large momentLarge moment
Schick et al., PRB 81, 212409 (2010)
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
Crystal and magnetic structure: Bronger et al, Z. anorg. allg. Chem. 539, 175 (1986)
THEORYSemiconductor with huge spin-orbit coupling
GAP
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
LiMnAs has a bandgap
InAs
Li MnAs
4.27A
4.28A
I. Wijnheijmer et al, Appl. Phys. Lett. In press
dI/dV map
Is LiMnAs the only choice available?
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
V. M. Ryzhkovsky, et al., Inorg. Mater. 32 117 (1995)
A.E. Austin, et al.,J. Appl. Phys. 33 1356 (1962)
TNRT
0 0.1 0.2 0.3 0.4 0.5 0.6 0.70
1
2
3
4
5x 10
6
Qz (A
-1)
Out-of-plane param (A):6.2933
Qx (A
-1)
Qy (
A-1
)
Spectra of in-plane periodicities in the substrate
-0.5 0 0.5-0.6
-0.4
-0.2
0
0.2
0.4
0.6
Qx (A
-1)
Qy (
A-1
)
Spectra of in-plane periodicities in the thin film
-0.5 0 0.5-0.6
-0.4
-0.2
0
0.2
0.4
0.6
GaAs
CuMnAs
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
CuMnAs grown on GaAs
0 0.1 0.2 0.3 0.4 0.5 0.6 0.70
1
2
3
4
5x 10
6
Qz (A
-1)
Out-of-plane param (A):6.2933
Qx (A
-1)
Qy (
A-1 )
Spectra of in-plane periodicities in the substrate
-0.5 0 0.5-0.6
-0.4
-0.2
0
0.2
0.4
0.6
Qx (A
-1)
Qy (
A-1 )
Spectra of in-plane periodicities in the thin film
-0.5 0 0.5-0.6
-0.4
-0.2
0
0.2
0.4
0.6
GaAs
CuMnAs
L=1 L=2 L=3
ab
c
a = b = 5.407 Åc = 6.313 Å
GaAs, a = 5.65 Å
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
TEM: Jaume Gazquez, Oak Ridge NL
Growth: R. Campion, Nottingham
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
TEM: Jaume Gazquez, Oak Ridge NL
Growth: R. Campion, Nottingham
GaAs
CuMnAs
GaAs
CuMnAs
Fe
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
(c)
[001](e)
300 K
Fe/CuMnAs exchange bias
GaAs
CuMnAs
Fe
CuMnAs grown on GaAs
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
(c)
[001](e)
GAP
300 K
Fe/CuMnAs exchange bias
Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks
Prague : P. Wadley, H. Reichlova, M. Cukr, F. Maca, A.B. Shick, J. Masek, P. Horodyska, P. Nemec, V. Holy, J. Zemen, P. Kuzel, I. Nemec, K. Olejnik, J. Wunderlich, O. Stelmakhovych, K. Ulrihova, P. Beran, V. Novak, T. JungwirthNottingham : R. Campion, K. Edmonds, B. Gallagher, C.T. FoxonEindhoven : I. Wijnheijmer, P. KoenraadORNL: J. Gazquez, M. Varela
Charge Long-range magnetic order
Implemented by Coupling
1. Metals: AMR,GMR2. Semiconductors3. Insulators
Standard substratesRoom temperature
Grown on
Thanks for your attention
LiMnAsCuMnAs