0 10 20 30 40 50 60 70 80 90 100
0
10
20
30
40
Am
plitu
de(n
m)
Z(nm)
Trace Retrace
0 20 40 60 80 100-140
-120
-100
-80
-60
-40
-20
0
20
40
Pha
se(o
)
Z(nm)
TraceRetrace
10 20 30 40 50-120
-80
-40
0
40
80
10 20 30 40 50
-5.00E-018
0.00E+000
5.00E-018
1.00E-017
Ene
rgy
diss
ipat
ion
Pha
se /
degr
ees
Z nm
D
10 20 30 40 50 60-0.6
-0.4
-0.2
0.0
0.2
0.4
0.610 20 30 40 50 60
-80
-60
-40
-20
0
20
40
Z nm
Pha
se /
degr
ees
For
ce g
radi
ent
Fptrace
04291853Ntb_si_probe2 Q=178, k=4.8 nm, DA=900 mV, senst. 18.88 nm/V
Nanotube length 35 nm, f=51.26 kHz
New data for a Ntb tip on a silicon surface
Ntb_Si_probe2_low_ampl_traceNtb_Si_probe2_low_ampl_retrace
Ntb_Si_probe2_low_phase_traceNtb_Si_probe2_low_phase_retrace
Ntb_Si_probe2_low_ediss_traceNtb_Si_probe2_low_ediss_retrace
Ntb_Si_probe2_low_forcgrad_traceNtb_Si_probe2_low_forcgrad_retrace
04291901.2Ntb_si_probe2 Q=178, k=4.8 nm, DA=2200 mV, senst. 18.88 nm/V
Nanotube length 35 nm, f=51.26 kHz
New data for a Ntb tip on a silicon surface
0 10 20 30 40 50 60 70 80 90 100
0
10
20
30
40
50
60
Am
plitu
de(n
m)
Z(nm)
Trace Retrace
0 20 40 60 80 100 120 140-100
-80
-60
-40
-20
0
20
40
60
80
Pha
se(o
)
Z(nm)
TraceRetrace
20 40 60-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
20 40 60
-40
-20
0
20
40
60
80
20 40 60
-0.5
0.0
Pha
se/d
egre
es
Con
serv
ativ
e F
orce
s
Z /nm
Fptrace
20 40 60 80-100
-80
-60
-40
-20
0
20
40
60
8020 40 60 80
-1.00E-017
0.00E+000
1.00E-017
2.00E-017
Dis
sipa
tion
ener
gy
Pha
se /
degr
ees
Z nm
D
Ntb_Si_probe2_interm_ampl_traceNtb_Si_probe2_interm_ampl_retrace
Ntb_Si_probe2_interm_phase_traceNtb_Si_probe2_interm_phase_retrace
Ntb_Si_probe2_interm_ediss_traceNtb_Si_probe2_interm_ediss_retrace
Ntb_Si_probe2_interm_forcgrad_traceNtb_Si_probe2_interm_forcgrad_retrace
0 20 40 60 80 100 120 140-100
-80
-60
-40
-20
0
20
40
60
80
Pha
se(o
)
Z(nm)
TraceRetrace
0 10 20 30 40 50 60 70 80 90 100
0
10
20
30
40
50
60
Am
plit
ud
e(n
m)
Z(nm)
Trace Retrace
20 40 60 80-100
-80
-60
-40
-20
0
20
40
60
8020 40 60 80
-1.00E-017
0.00E+000
1.00E-017
2.00E-017
Dis
sipa
tion
ener
gy
Pha
se /
degr
ees
Z nm
D
20 40 60 80-0.6
-0.4
-0.2
0.0
20 40 60 80
-40
-20
0
20
40
60
80
20 40 60 80-0.6
-0.4
-0.2
0.0
Pha
se/d
egre
es
For
ce g
radi
ent
Z /nm
Fptrace
Q=178, k=4.8 nm, DA=900 mV, senst. 18.88 nm/VNanotube length 35 nm, f=51.26 kHz
04291904.4Ntb_si_probe2
Ntb_Si_probe2_high_ampl_traceNtb_Si_probe2_high_ampl_retrace
Ntb_Si_probe2_high_phase_traceNtb_Si_probe2_high_phase_retrace
Ntb_Si_probe2_high_ediss_traceNtb_Si_probe2_high_ediss_retrace
Ntb_Si_probe2_high_forcgrad_traceNtb_Si_probe2_high_forcgrad_retrace
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