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04291853 Ntb_si_probe2. Q=178, k=4.8 nm, DA=900 mV, senst. 18.88 nm/V Nanotube length 35 nm, f=51.26 kHz. Ntb_Si_probe2_low_ampl_trace Ntb_Si_probe2_low_ampl_retrace. Ntb_Si_probe2_low_ediss_trace Ntb_Si_probe2_low_ediss_retrace. Ntb_Si_probe2_low_phase_trace - PowerPoint PPT Presentation
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04291853Ntb_si_probe2 Q=178, k=4.8 nm, DA=900 mV, senst. 18.88 nm/V
Nanotube length 35 nm, f=51.26 kHz
New data for a Ntb tip on a silicon surface
Ntb_Si_probe2_low_ampl_traceNtb_Si_probe2_low_ampl_retrace
Ntb_Si_probe2_low_phase_traceNtb_Si_probe2_low_phase_retrace
Ntb_Si_probe2_low_ediss_traceNtb_Si_probe2_low_ediss_retrace
Ntb_Si_probe2_low_forcgrad_traceNtb_Si_probe2_low_forcgrad_retrace
04291901.2Ntb_si_probe2 Q=178, k=4.8 nm, DA=2200 mV, senst. 18.88 nm/V
Nanotube length 35 nm, f=51.26 kHz
New data for a Ntb tip on a silicon surface
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Ntb_Si_probe2_interm_ampl_traceNtb_Si_probe2_interm_ampl_retrace
Ntb_Si_probe2_interm_phase_traceNtb_Si_probe2_interm_phase_retrace
Ntb_Si_probe2_interm_ediss_traceNtb_Si_probe2_interm_ediss_retrace
Ntb_Si_probe2_interm_forcgrad_traceNtb_Si_probe2_interm_forcgrad_retrace
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Q=178, k=4.8 nm, DA=900 mV, senst. 18.88 nm/VNanotube length 35 nm, f=51.26 kHz
04291904.4Ntb_si_probe2
Ntb_Si_probe2_high_ampl_traceNtb_Si_probe2_high_ampl_retrace
Ntb_Si_probe2_high_phase_traceNtb_Si_probe2_high_phase_retrace
Ntb_Si_probe2_high_ediss_traceNtb_Si_probe2_high_ediss_retrace
Ntb_Si_probe2_high_forcgrad_traceNtb_Si_probe2_high_forcgrad_retrace
