Appl. Phys. Lett. 110, 222402 (2017); https://doi.org/10.1063/1.4984221 110, 222402

© 2017 Author(s).

Tuning the magnetoresistance symmetry ofPt on magnetic insulators with temperatureand magnetic dopingCite as: Appl. Phys. Lett. 110, 222402 (2017); https://doi.org/10.1063/1.4984221Submitted: 09 March 2017 . Accepted: 15 May 2017 . Published Online: 30 May 2017

B. F. Miao, L. Sun, D. Wu , C. L. Chien, and H. F. Ding

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Tuning the magnetoresistance symmetry of Pt on magnetic insulatorswith temperature and magnetic doping

B. F. Miao,1 L. Sun,1,2 D. Wu,1,2 C. L. Chien,3 and H. F. Ding1,2,a)

1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University,22 Hankou Road, Nanjing 210093, People’s Republic of China2Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road,Nanjing 210093, People’s Republic of China3Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218, USA

(Received 9 March 2017; accepted 15 May 2017; published online 30 May 2017)

We present a comparison study of the temperature dependence of the intriguing magnetoresistance

(MR) in Pt/YIG (yttrium iron garnet), Pt/YIGBB (the YIG substrate has been bombarded with Arþ),

and Pt/SiO2 (with different Fe doping levels). With decreasing temperature, the MRs in Pt/YIG and

Pt/YIGBB change symmetry from Rz¼Rx>Ry at room temperature to Rx>Rz>Ry at low

temperature. A similar behavior in both Pt/YIG and Pt/YIGBB implies that the underlying physics is

due to magnetic scattering, instead of the pure spin current across the interface. By changing the Fe

doping level in the SiO2 substrate, we can further systematically modulate the symmetry of MR in Pt/

SiO2 (Fe doped). The doping level dependent symmetry can also qualitatively explain the controversy

over the MRs of Pt/YIG and similar structures at low temperature. Published by AIP Publishing.[http://dx.doi.org/10.1063/1.4984221]

Heterostructures of heavy metals with strong spin-orbit

coupling on magnetic insulators have been widely studied in

various spin current related phenomena, such as spin Hall

effect,1,2 spin pumping,3,4 spin Seebeck effect,5–7 and spin

transfer torque.8,9 Among these structures, platinum (Pt)/

yttrium iron garnet (YIG) is a typical system, where Pt acts

as the spin current generator/detector, and YIG transports or

produces spin current without accommodating charge cur-

rent.5,7,10–15 Recently, an unconventional magnetoresistance

(MR) has been reported first in Pt/YIG bilayer structures16–19

and subsequently in Pd/YIG,20–22 Ta/YIG,11,23,24 W/YIG,25

and Pt on other magnetic insulators.26–28 Interestingly, the

resistance experienced by electrons passing only through the

non-magnetic films reflects the magnetization orientation of

the underlying insulating substrates, enabling the electronic

detection of the magnetization of the ferromagnetic insula-

tors. The resistance with in-plane field can be described as

R ¼ Rx � DR½m � ðz� jÞ�2, where DR ¼ Rx � Ry, Rx (Ry)

denotes the resistance with the magnetic field along the x-

(y-) axis, m and j are the unit vectors in the directions of

magnetization M and current J, and z is the direction perpen-

dicular to the film plane. This in-plane symmetry is identical

to the well-known anisotropic magnetoresistance (AMR) in

most ferromagnetic metals, with Rx>Ry and a cosine square

angular dependence. However, it exhibits an unconventional

behavior under an out-of-plane magnetic field of Rz¼Rx

>Ry, in sharp contrast to the well-known behavior of Rx

>Ry¼Rz for AMR.

The unconventional MR in Pt/YIG and similar system

has drawn intense interest, both experimentally and theoreti-

cally. While most previous studies focused on the measure-

ments at room temperature, the MR in Pt/YIG and similar

systems at low temperature brings more interesting features.

Lin et al., reported that the MR symmetry of Pd/YIG deviated

from Rz¼Rx>Ry at room temperature to Rx>Rz>Ry at low

temperatures.21 They decompose the MR in Pd/YIG into two

contributions: one from spin Hall magnetoresistance (SMR)

(Rz¼Rx>Ry) and the other from the AMR of the polarized

Pd layer (Rx>Ry¼Rz), which emerges only at low tempera-

tures. A similar explanation is also adopted in the Pt/LaCoO3

structure.28 V�elez et al. observed Rz>Rx>Ry in Pt/YIG at

low temperatures, and they ascribed this to the weak anti-

localization in Pt which would typically enhance the resis-

tance of metal with strong spin-orbit coupling under the per-

pendicular magnetic field.29 However, Shiomi et al., found

that the symmetry of Rz¼Rx>Ry was preserved for Pt/YIG

even at low temperatures.30 Furthermore, weak anti-

localization appears only after special surface treatment of the

YIG surface before the Pt deposition.30 At present, different

symmetries of MR, some without extensive data, have been

reported in supposedly similar structures. Therefore, it is

highly desirable to study the underlying mechanism that mod-

ulates the MR symmetry and explain the controversy between

different observations.

In this work, we present detailed studies of the MRs in Pt

films deposited on YIG, Arþ bombarded YIG (YIGBB) and

Fe-doped SiO2 substrates in a wide temperature range

(10–300 K). We find that the MR symmetry is directly related

to the magnetic scattering at interface. At room temperature,

the MRs in these structures all have the same angular depen-

dence of Rz¼Rx>Ry, and the MR ratios increase with mag-

netic field. The MR of Pt/YIG at low temperature exhibits a

behavior of Rx>Rz>Ry, which is significantly different

from its unique angular dependence observed at room tem-

perature. This phenomenon also persists in a similar system

Pt/YIGBB (the YIG surface was purposely altered by Arþ

beam bombardment before deposition of Pt, see below),

where the spin current has been intentionally blocked anda)Author to whom correspondence should be addressed: hfding@nju.edu.cn

0003-6951/2017/110(22)/222402/5/$30.00 Published by AIP Publishing.110, 222402-1

APPLIED PHYSICS LETTERS 110, 222402 (2017)

only magnetic scattering exists. The similar MR symmetry

observed in Pt/YIG and Pt/YIGBB, with or without pure spin

current across the Pt-YIG interface, suggests the importance

of magnetic scattering to the observed intriguing angular

dependence change at different temperatures. By introducing

Fe impurities with different doping levels into the amorphous

SiO2 substrate, we can further systematically tune the sym-

metry of MR in Pt/SiO2(Fe) at low temperature from

Rz>Rx¼Ry (clean SiO2), through Rz>Rx>Ry (low per-

centage Fe doping in SiO2), and reach Rx>Rz>Ry (high per-

centage Fe doping in SiO2). Our finding emphasizes the

importance of magnetic scattering at the interface and quali-

tatively explains the discrepancy over the symmetry of MRs

in Pt/YIG and similar structures among different groups.

We use rf magnetron sputtering to deposit amorphous

SiO2 (with or without Fe dopants) onto thermally oxidized

Si(001) substrates and dc magnetron sputtering to deposit 3-

nm Pt onto polycrystalline YIG slab (SurfaceNet GmbH),

YIGBB, and Fe-doped SiO2 substrates at room temperature.

The thicknesses of all substrates are �0.5 mm. The deposited

thin films have been patterned into 0.2 mm wide Hall bars

with one long segment (5 mm) and three short side bars

1.5 mm apart, as shown in Fig. 1(a). The 4-terminal method

has been used to measure the MR with the current along the

long segment and the voltage obtained from the two adjacent

side bars. In order to access the angular dependence of MR,

we rotate the magnetic field B within the xy-, xz-, and yz-planes with angles /xy, axz, and hyz relative to x-, x-, and z-

axes, respectively, where x-, y-, z-axes are parallel to the

edges of the YIG substrate. For the thermal measurements, a

perpendicular temperature gradient of rzT� 20 K/mm is

established by placing the sample in between and in contact

with two large Cu plates maintained at different constant

temperatures. Under a vertical temperature gradient, the spin

Seebeck effect in YIG drives a pure spin current flow along

the z-direction and can be detected as a thermal voltage Vth

via the ISHE with EISHE / JS � r in the Pt layer,5 where JS

and r are the flow direction of the spin current and spin

index, respectively, with r parallel to the YIG’s magnetiza-

tion direction. The distance between the two voltage leads

for measuring the thermal voltage is around 4.2 mm.

Figure 1(b) presents the field dependence of Rx (black

circle) and Ry (red square) for Pt(3 nm)/YIG with the in-

plane field. The small plateau near the origin is commonly

found in thick YIG substrates.31,32 This MR with a unique

angular dependence with Rz¼Rx>Ry [see also Fig. 2(a)]

has been widely discussed. In Fig. 1(b), the blue triangle

(right scale) shows the thermal voltage Vth for Pt (3 nm)/YIG

under a vertical temperature gradient (rzT� 20 K/mm),

where the field B is applied along the y-axis (/xy¼ 90�). The

measured signal is of �10 lV in magnitude and exhibits an

asymmetric behavior in field, consistent with the symmetry

required for ISHE (EISHE / JS � r).

Before the deposition of the Pt film, we purposely alter

the YIG surface by Arþ beam bombardment. The altered YIG

surface greatly reduces the spin-mixing conductance at the Pt-

YIG interface, thus blocking the spin current transmis-

sion.33–35 Bombardment on the YIG surface for 5 min (500 V,

current density 0.4 mA/cm2) essentially eliminates all spin

current injection. Thus, both the MR ratio (Rx – Ry)/Ry at low

field (100 mT) and thermal voltage Vth disappear [Fig. 1(c)],

which also corroborates that the MR at the low field is corre-

lated with spin current, consistent with the SMR model pro-

posed by Nakayama et al..18,36 The negligible Vth of Pt(3 nm)/

YIGBB [Fig. 1(c) inset] and considerable MR ratio at 1.5 T37

also evidence that the high field MR is not due to pure spin

current. The observed MR was attributed to a combination of

magnetic scattering and spin orbit coupling.38 In particular,

FIG. 1. (a) Schematics for the measurements of the angular dependent mag-

netoresistance and the thermal voltage Vth with temperature gradient along

the z-axis. /xy, axz, and hyz denote the angle between the magnetic fields

with respect to x-, x-, and z-axes within xy-, xz-, and yz-planes, respectively.

(b) Field dependent longitudinal MR Rx (black circles), transverse MR Ry

(red squares), and thermal voltage Vth (blue triangles, right scale) for

Pt(3 nm)/YIG. (c) Field dependent Rx, Ry, and Vth for Pt(3 nm)/YIGBB. The

inset of (c) presents the time evolution of thermal voltage Vth of Pt(3 nm)/

YIGBB under different magnetic fields.

FIG. 2. Angular dependent MR measured within xy-, xz-, and yz-planes with

angles /xy (red square), axz (black circle), and hyz (blue triangle) relative to

x-, x-, and z-axes, for (a) Pt(3 nm)/YIG at 300 K and (b) Pt(3 nm)/YIG at

10 K. (c) and (d) are the angular dependent MR within three planes for

Pt(3 nm)/YIGBB at 300 K and at 10 K, respectively. Both Pt/YIG and Pt/

YIGBB change the MR symmetry from Rz¼Rx>Ry at 300 K to

Rx>Rz>Ry at 10 K. For all the measurements, the magnetic field is fixed at

8.0 T. The inserted arrows represent the scale bars for the MR ratio.

222402-2 Miao et al. Appl. Phys. Lett. 110, 222402 (2017)

the Arþ bombarded YIG surface provides us the advantage to

investigate the MR behavior related to the magnetic scattering

only, since the spin current has been blocked at the interface.

Figure 2(a) presents the angular dependent resistance of

Pt(3 nm)/YIG at room temperature within the xy-, xz-, and

yz-planes with angles /xy (red square), axz (black circle), and

hyz (blue triangle) relative to x-, x-, and z-axes, respectively.

The magnetic field is fixed at 8.0 T which is sufficiently

larger than the demagnetizing field of the YIG substrate.

Rotating B within the xy- and yz-planes gives a cosine square

angular dependence with respect to the x- and y-axes, respec-

tively. The resistance essentially is a constant when the mag-

netic field is rotated within the xz-plane, i.e., Rz¼Rx>Ry.

Although the resistance of Pt(3 nm)/YIGBB is isotropic when

B is less than 100 mT [Fig. 1(c)], the difference among Rx,

Rz, and Ry emerges and increases with increasing B, also

exhibiting Rz¼Rx>Ry [Fig. 2(c)]. In both Pt/YIG and Pt/

YIGBB, MRs follow Rz¼Rx>Ry at room temperature and

have the cosine square angular dependence; while both spin

current and magnetic scattering (together with spin-orbit

coupling) contribute to the MR in Pt/YIG at the high field,

only magnetic scattering is involved in Pt/YIGBB. Pt/YIGBB

is thus a suitable reference system with respect to Pt/YIG for

further investigations, although the detailed reason why the

joint effect of magnetic scattering and spin-orbit coupling

gives the same symmetry to SMR is still elusive.

With decreasing temperature, the MR in Pt(3 nm)/YIG

deviates from its symmetry observed at room temperature

(Rz¼Rx>Ry) and exhibits Rx>Rz>Ry at 10 K [Fig. 2(b)].

As shown in Fig. 2(d), the MRs in Pt(3 nm)/YIGBB exhibit

similar behavior to Pt(3 nm)/YIG at 10 K and have

Rx>Rz>Ry. The similar behavior of MR in Pt/YIG and Pt/

YIGBB, with or without pure spin current across the Pt-YIG

interface, suggests that the magnetic scattering instead of

spin current is the origin of the observed intriguing symme-

try change at different temperatures. Figures 4(a) and 4(b)

summarize the MR ratio DR/R within three different planes

for Pt(3 nm)/YIG and Pt(3 nm)/YIGBB at different tempera-

tures. As the temperature decreases, MR symmetry in both

Pt/YIG and Pt/YIGBB changes from Rz¼Rx>Ry to

Rx>Rz>Ry. In Pt/YIG, both SMR and magnetic scattering

contribute to the observed MR, where the peak behavior of

DRxy in Pt/YIG was explained by the spin Hall magnetoresis-

tance theory with a constant spin Hall angle and temperature

dependent spin diffusion length.39 For the Pt(3 nm)/YIGBB,

only magnetic scattering exhibits and the MR ratios increase

with decreasing temperature to 10 K [Fig. 4(b)].

In order to further demonstrate the importance of magnetic

scattering, we performed the temperature dependent MR study

of Pt on Fe-doped SiO2 with different doping levels. As a con-

trol sample, Pt(3 nm)/SiO2 exhibits isotopic feature when rotat-

ing the magnetic field within 3 different planes at room

temperature, i.e., Rx¼Ry¼Rz [Fig. 3(a)], consistent with the

previous study as pure Pt itself shows no observable fea-

ture.28,40 As temperature decreases, Rz would be enhanced with

magnetic field exhibiting Rz>Rx¼Ry due to weak anti-

localization [Fig. 3(b)], which is commonly observed in non-

magnetic metals with strong spin-orbit coupling.29,30,41–43

Using the magnetron co-sputtering technique, we introduce Fe

impurities into the SiO2 substrate. When the SiO2 is slightly

doped, for instance, SiO2(0.5%Fe), very small angular

dependent MR is observed at room temperature [Fig. 3(c)].

Interestingly, with decreasing temperature, the contribution

from magnetic scattering enhances, and an in-plane MR with

Rx>Ry in Pt(3 nm)/SiO2(0.5%Fe) emerges at 10 K. Mean-

while, the weak anti-localization still dominates, and therefore,

Pt(3 nm)/SiO2(0.5%Fe) exhibits an angular dependence with

Rz>Rx>Ry at 10 K [Fig. 3(d)]. Further increasing the Fe dop-

ing level to 15.3%, sizable MR with Rz¼Rx>Ry appears

under 8.0 T even at room temperature, see Fig. 3(e). This MR,

albeit with the same symmetry of the SMR model, is due to

a interplay of magnetic scattering and strong spin-orbit cou-

pling and is proportional to the Fe impurity in the substrate.38

At low temperature, Rz of Pt(3 nm)/SiO2(15.3%Fe) is further

suppressed compared with Pt(3 nm)/SiO2(0.5%Fe), and the

MR symmetry changes to Rx>Rz>Ry at 10 K [Fig. 3(f)].

Therefore, we demonstrate that the MR symmetry in Pt/

SiO2(Fe doped) can be symmetrically modulated by only tun-

ing the Fe doping level in the SiO2 substrate, highlighting the

importance of magnetic scattering at the interface. Figures 4(c)

and 4(d) summarize the evolution of MR ratio within three dif-

ferent planes obtained at 8.0 T for Pt(3 nm)/SiO2(0.5%Fe) and

Pt(3 nm)/SiO2(15.3%Fe), respectively. The MR ratios increase

with decreasing temperature, which is expected as the magnetic

scattering generally becomes stronger at low temperature. By

summarizing the features of the temperature dependent and the

doping-level dependent MRs, we attribute the peculiar change

of MR symmetry at low temperature to the magnetic scattering

FIG. 3. Angular dependent MR within different planes for (a) Pt(3 nm)/

SiO2 at 300 K, (b) Pt(3 nm)/SiO2 at 10 K, (c) Pt(3 nm)/SiO2(0.5%Fe) at

300 K, (d) Pt(3 nm)/SiO2(0.5%Fe) at 10 K, (e) Pt(3 nm)/SiO2(15.3%Fe) at

300 K, and (f) Pt(3 nm)/SiO2(15.3%Fe) at 10 K. For all the measurements,

the magnetic field is fixed at 8.0 T. With increasing Fe doping level in the

SiO2 substrate, the MR symmetry in Pt/SiO2(Fe doped) can be systemati-

cally modulated.

222402-3 Miao et al. Appl. Phys. Lett. 110, 222402 (2017)

which increases with increasing doping level and decreasing

temperature.

As presented above, Pt/SiO2(15.3%Fe) fully reproduces

MR symmetry as Pt/YIG and Pt/YIGBB at both room temper-

ature and low temperature. Due to the similarity, our findings

can also serve as an explanation for large discrepancy among

different groups for the temperature dependent symmetry of

MR in Pt/YIG and similar systems. For instance, the angular

dependence of Rz>Rx>Ry was reported in Pt/YIG,29 and

Rx>Rz>Ry was found in Pd/YIG21 and Pt/LaCoO328 at low

temperature, respectively; whereas Rz¼Rx>Ry of Pt/YIG

was preserved below room temperature in Ref. 30, and the

authors note that the treatment of the YIG surface is impor-

tant for the experimental observations. For Pt/SiO2, no MR

exists within the xy-plane and the extra enhancement of

Rz in 10 K is due to the weak anti-localization. In Pt/

SiO2(0.5%Fe), where the weak anti-localization still domi-

nates and the magnetic scattering already plays considerable

contribution, it thus exhibits a behavior of Rz>Rx>Ry. This

is similar to the case observed in Ref. 29. In Pt/SiO2(15.3%),

the magnetic scattering dominates and Rz is further sup-

pressed, resulting in a symmetry with Rx>Rz>Ry. This

observed symmetry is similar to the one reported in Refs. 21

and 28. Thus, our findings also qualitatively explain why dif-

ferent angular dependences were observed by different

groups and why the surface treatment was crucial to suppress

weak anti-localization in Ref. 30 since the magnetic scatter-

ing at the interface could be very different with different

preparation methods.

In summary, by tailoring the Pt-YIG interface, we stud-

ied the temperature dependent magnetoresistance in Pt/YIG

with and without Arþ bombardment on the YIG surface in a

wide temperature range. In both cases, the MR exhibits sym-

metry of Rz¼Rx>Ry at room temperature, and switches to

Rx>Rz>Ry at low temperature. The observed similar

behavior in both Pt/YIG and Pt/YIGBB implies that the

underlying physics is due to magnetic scattering, instead of

the pure spin current across the interface. By introducing Fe

impurities in SiO2 substrate, we further demonstrate that

different symmetries can be reproduced in Pt/SiO2(Fe) by

modulating the Fe doping level in the SiO2 substrate only.

Our findings evidence the importance of the magnetic scat-

tering on the temperature dependent MR observed in Pt thin

films on magnetic insulators. In addition, it also qualitatively

explains the discrepancy over the angular dependences of

MR in Pt/YIG and similar systems among different groups.

This work was supported by the National Natural

Science Foundation of China (Grant Nos. 51601087,

51571109, and 11374145) and the Natural Science

Foundation of Jiangsu Province (Grant No. BK20150565).

Work at Johns Hopkins University was supported in part by

Spins and Heat in Nanoscale Electronic Systems, an Energy

Frontier Research Center funded by the U.S. Department of

Energy Basic Energy Science under Award No. SC0012670.

We thank Professor Michel Dyakonov, Professor Weiyi

Zhang, and Professor Jiang Xiao for fruitful discussions.

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