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F L U O R E S C E N C E • F O R E N S I C S • S P E C T R O S C O P Y S Y S T E M S • R A M A N • E M I S S I O N • O E M &GRATINGS • T H I N F I L M S

HORIBA GROUP-www. .com

Jobin-Yvon Horiba

Dr Yong Ji

Application Engineer - Thin Film Group

[email protected]

www.jyinc.com or www.jyhoriba.com


JY-Horiba in the world

LocationU.S.A.

Europe

JAPAN

Oct. 2002, JY acquired Philips Ellipsometer line


Introduction

I - Basic Principle of Ellipsometry and I - Basic Principle of Ellipsometry and ReflectometryReflectometry

II -Application of SE(PME) and II -Application of SE(PME) and LE/Reflectometry on SiGe and SOILE/Reflectometry on SiGe and SOI

III - What we can provide, UVSEL, PZ, III - What we can provide, UVSEL, PZ, PQ…. , the way we support you….PQ…. , the way we support you….


I - BASIC PRINCIPLE OF I - BASIC PRINCIPLE OF ELLIPSOMETRY AND ELLIPSOMETRY AND

REFLECTOMETRYREFLECTOMETRY


1 - Reflectometry principle

= measurement of the changes in the light intensity by reflection on a surface vs wavelength

n0

n1

Ei

Er

Et

r()=Er()/Ei()R()=r().r*()


2 - Ellipsometry principle

= measurement of the changes in the light polarization by reflection on a surface

n0

n1

is

rs

sE

Er

ip

rp

pE

Er i

pEisE

rsE

rpE

j

s

p er

rtan


BASIC ELLIPSOMETRY EQUATION

j

s

p etanr

r

- and Ellipsometric angles - measured data

s p

360,0 90,0

s

p

r

rtan

- Phase difference introduced by reflection from sample

- Ratio amplitude

- Angle definition range

and



ELLIPSOMETRY ADVANTAGES

• Measures ratio of two values

- highly accurate & reproducible

- no reference necessary

• Measures a « phase » - very sensitive, especially to ultrathin films (< 10 nm)

• Laser Ellipsometry (LE)

- measures two unknowns at the laser wavelength (I.e. d and n, d and k, or n and k)

• Spectroscopic Ellipsometry (SE)

- increased sensitivity to multiple film parameters

- eliminates period problem for thick films

- measures data at wavelength of interest

A NON DESTRUCTIVE TECHNIQUE



3 - Ellipsometry Type

Null Ellipsometer Configuration

• Adjust optical elements to extinguish beam at detector

slow (usually manual) and difficult to make spectroscopic

accurate, low systematic error

Rotating Polarizer Ellipsometer Configuration can be highly accurate, easy to construct

less sensitive to when near 0 or 180 (tg / cos )

can cause beam deviation

Phase Modulated Ellipsometer Configuration highly accurate : excellent precision over the whole range

fast measurement : very well adapted for in-situ control

signal : very accurate and stable


ELLIPSOMETRY ADVANTAGESPEM Rotating

Polarizer(Analyzer)

LaserEllipsometer(LE)

Reflectometer LE+Reflectometer

Modulation No MechanicalMovement

MechanicalRotation

MechanicalRotation

NoMechanicalMovement

MechanicalRotation

MeasuredVariables &Precision

sin2 orCOS2 - tg

excellent onboth -

tg - cos excellent on - poor on

tg - cos excellent on - good on

Reflectivity tg - cos excellent on - good on

MeasurementSpeed

fast slow fast medium medium

Wavelength(Energy)Range

UV-VIS-IR UV-VIS-IR LaserWavelength

UV-VIS-IR UV-VIS-IR

Accuracy onthickness

Excellent good Good Poor Good

MeasurableThickness

~0A-20um ~0A-20um ~0A-10um 500A-30um ~0A-50um

4 - Ellipsometry Comparison


What can LE/Reflectometry do ?

• Interface thickness

• Layer thickness

• Native thickness

• Uniformity

Dimensional properties :

Refractive indicesRefractive indices Absorption coefficientsAbsorption coefficients Dielectric constantsDielectric constants

Optical properties :


Interface thickness Layer thickness Native thickness Roughness

Optical properties

Material properties Composition Microstructure Doping level Homogeneity

Substrate

layer

Dimensional properties Refractive index Extinction coefficients

7- Information from PME


8 - PME presentation

Schematic diagram of the spectroscopic Phase Modulated Ellipsometer


- What is the PEM ?

• Application of a sinusoidal vibration through piezo on the PEM

• Periodical birefringence into quartz bar

• Modulation phase shift

Elliptically modulated

polarized light

Linearly polarized light

Piezo electric transducer

Oscillator 50 kHz

Quartz Bar


- Advantages of PME vs. Rotating Element SE?

• No moving part----> no light path wobbling----> high accuracy

• long lasting---> low maintenance cost

• 50KHz Modulation >> 20Hz rotation of RE ----> PME faster

• Measuring Is=Sin(2)Sin() Ic= Sin(2) Cos() or In=Cos(2 ) instead of Cos() and Tan()---> no ambiguity of sign ----> reliable

• high accuracy on when = 0 or 180 (thin layer) ----> high accuracy for all applications

• Polarizer and Analyzer are fixed ---> no dependency on light source and detector ---> high accuracy for today and tomorrow


Glass substrate and Oxide layer refractive indices

1,4

1,45

1,5

1,55

1,6

1,65

1,5 2,5 3,5 4,5

E (eV)

n

Bulk oxide layer

Interface layer

Glass substrate

Sensitivity of Phase Modulated SE

Glass substrate

3855 A SiO2Impossible to detect using

Rotating Polarizer


Precision of the system

NIST 10nm

98

100

102

104

106

108

110

0 5 10

Measurement numbers

Thi

ckne

ss (

A)

UVISEL measurement

NIST mean value

NIST min value

NIST max value

NIST traceable Standard reference Materials


II -Application of SE(PME) II -Application of SE(PME) and LE/Refletometry and LE/Refletometry

on SiGe and SOIon SiGe and SOI

1. SE(PME) application1. SE(PME) application


c-Si

SixGe(1-x)

Goal : Measurement of thickness and composition x

1 - SiGe application


Si Substrate

Si(1-x)Gex (x=0.15) 830 Å

Native Oxide Measured Data & Simulated Data

SIMS Data0.00

0.05

0.10

0.15

0.20

0.25

0 200 400 600 800 1000 1200 1400

DEPTH (Angstroms)

Co

mpo

sitio

n (S

i(1

-x)G

ex)

)

← Ave 14.9% for Ge

30 Å

+++ Measured data Simulated data

Ellipsometric Model

Our unique method (Patent pending) allows to evaluate Ge concentration within 1 atomic % precision.

Sorry! We can not open data of SiGeC now.

SiGeC: 300-1500A, Ge=5-25%, C < 2.0%



Si Substrate

Native Oxide

Ellipsometric Model

Si(1-x)Gex (x=0.05)

Si Repeatability

0.00050.000

100.000150.000200.000250.000300.000

1 2 3 4 5 6 7 8 9 10Times

Tihikn

ess an

d Ge (

%)

SiGe (A)Si Cap (A)Ge (%)

1. SiGe thickness

Ave : 27.2nm

3 Sigma: 0.33nm

2. Ge %

Ave : 5.787 atomic %,

3 Sigma: 0.234%

It is possible to measure low level of Ge concentration.



1 - SiGe Application-Mapping Capability


Good accuracy measurement of wide range thickness and Ge concentration of HBT structures

Si Substrate

Si(1-x)Gex

Graded Layer

Native Oxide

Ellipsometric Model

c-Si20 Å

100~400 Åc-Si

Spacer Layer Si(1-x)Gex (x=0.05~0.25)

100~400 Å

100~400 Å

Cap Layer

Measured Data & Simulated Data

1 - SiGe application-Graded


Si Substrate

SiO2 1000 Å

Native Oxide

Ellipsometric Model

Poly-Si(1-x)Gex 2000 Å20 Å

Ellipsometer Surface Auger

15.2 14.5

22.6 22.8

Ge concentration (atom %)

Measured Data & Simulated Data

n (SiGe) Ge %n (poly-SiGe) Ge %, Crystalinity

No references for poly-SiGe exist

No need for poly-SiGe references if using our Approximation Technique!(Patent pending)

1 - SiGe application:P-SiGe


Si Substrate

SiO2 300~5000 Å

Native Oxide

SOI structure

c-Si20 Å100~10000 Å

High Accuracy Automatic Measurement of Wide Thickness Range SOI structures

Using Special technique can achieve high accuracy measurement for thin Buried Oxide

SiO2 SiReal Value(*) 1001.7

Measured Value 998.3 977.9

Thickness (A)

(*) Measured after Si layer etching

Accuracy Example for BOX

1 - SOI application


II -Application of SE(PME) II -Application of SE(PME) and LE/Refletometry and LE/Refletometry

on SiGe and SOIon SiGe and SOI

2. LE/Reflectometry application2. LE/Reflectometry application


C-Si

C-Si substrate

TFT Applications

SiO2

1 - SOI Application

Model for low dose implantation


1 - SOI Application: reflectivity spectrum of SOI wafer


C-Si

C-Si substrate

TFT Applications

SiO2

1 - SOI Application

2243.86 0.82A

1807.12 2.64A

Measurement result


1 - SOI Application: SiO2 uniformity mapping


1 - SOI Application: Si uniformity mapping


1 - SOI Application: reflectivity spectrum for high does implantation


C-Si

C-Si substrate

TFT Applications

SiO2

1 - SOI Application

1896.99 0.77A

3617.51 3.31A

Measurement result for high dose implantation


1 - SOI Application


TFT Applications1 - SOI Application

1892.83 0.81A

3419.44 4.69A

Measurement result

3 Layer Model

C-Si Substrate

C-Si

SiO2

C-Si+SiO2 289.19 3.49ASi:43.33% , SiO2 :56.67%


III - What we can provide, III - What we can provide, UVSEL, PZ, PQ…. , the way UVSEL, PZ, PQ…. , the way

we support you….we support you….


Auto collimation system

CCD Camera

Detection head

Excitation head

XY stage

Automatic goniometer

1 - UVSEL Bench top


2 - UVSEL Rack

• 15 inches flat screen display

• Integration into the rack : multi-wavelengths, controller, PC, automatic sample stage electronic, goniometer

• Dimension (mm) :- Height : 1532 - Width : 1032 - Depth : 832

A full package to save space


• For ultra thin film from 10 Å to several microns

• For single or complex multiple layer stack measurements

• Fully automated system

• Provides highly accurate measurements of material and thin film optical and structural properties

• Allows a high throughput > 130 wafers/h

• Available for 6 ’’, 8 ’’ or 12 ’’ sample size

3 - UT300 Fully Automation


•Thickness monitoring

•Growth and etch rate

•Endpoint detection

•Alloys composition,Crystallinity, Surface damage,

Contamination, Surface temperature

•Plasma deposition, Plasma etching,Thermal oxidation, CVD, sputtering, MBE, MOVPE,Surface cleaning, Implantation,Corrosion,Electrochemistry

4-UVSEL- in-situ


Transparent films - such as oxides, nitrides, DL carbon and ARC. Absorbing films - such as poly and a-silicon, polyimide. Multilayers - such as SOI, ONO, OPO or CMP films.

5-PZ 2000


PQ Ruby

PQ Ruby LE:Laser Ellipsometry

PQ Ruby R:Reflectometry

PQ Ruby LE/R:combines Laser Ellipsometry and Reflectometry into one tool

Ultra-thin gate oxides: unique accuracy due to Laser Ellipsometry

193 nm ARC & resist: new applications due to a built-in reflectometer (from 186 nm - 950 nm)

SOI & poly-Si on oxide: unique infra-red option for measuring (poly-) Si on oxide


APPLICATION LABORATORYAPPLICATION LABORATORY

The way we support youThe way we support youApplication support :- Dr Yong Ji: [email protected] Dr Eric TEBOUL: [email protected] Rainer Hoffmueller: [email protected] Alan Kramer: [email protected]


1 - JY ’s Application laboratory expertise

1 - Industrial R&D in III-V, semiconductor, optic, flat panel display

Examples * c-Si/SiO2/Cobalt * glass/a-SiH

* c-Si/SiO2/Resin * c-Si/metal oxide/p-SiGe

2 - Fundamental research in surface science

Examples * polycarbonate/chalcogenide glass

* c-Si/SiO2/Langmuir Blodgett

* H2O/dodecanol

3 - Industrial applications : quality control, III-V, flat panel display

Examples * c-Si/SiO2/Si3N4 * c-Si/TiO

* c-Si/SiO2/poly-Si/SiO2 * c-Si/Al2O3


2 - JY ’s thin film characterization

Typical materials

• Semiconductor : silicon, III-V, II-VI, alloys …

• Metal : Al, Cr, Ti, TiN, Co

• Insulator : oxide, nitride, fluoride, carbon based

• Polymer : polyethylene, polycarbonate, nylon, color dye

• Liquid : water, oil

Multi-layers

Gradients

Anisotropic layers

Effective Medium Analysis


In Situ Sensors

Ellipsometry

LangmuirProbe

Laser and white lightInterferometry

Wafer visualizationPattern recognition

OpticalEmission

SpectroscopyWafer

Documents

STRICTLY CONFIDENTIAL F L U O R E S C E N C E F O R E N S I C S S P E CT R O S C O P Y S Y S T E M S R A M A N E MI S S I O N O E M &GRATINGS T H I N F