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SputteringTutorial:ThinFilmMetallizationonAlNandAl2O3
CMCLaboratories,Inc.
ReviewoftheSputteringProcess
KeyCharacteristicsofSputtering
• Atom-by-atomdepositiontechnique• Atomsgenerallyhavelittleenergywhendeposited- easyto
producenon-equilibriumphases(atomstrappedattheirdepositionsite)
• Almostanysolidmaterialcanbesputtered- veryversatile• Filmmorphology(grainsizeandshape,porosity,surface
roughness)isverydependentondepositionconditions
BasicSputterDepositionSteps
• AhighvacuumisgeneratedinthesputtertooltoeliminateresidualN2 andO2.Goal10-7 Torrrange.
• ThechamberisbackfilledwithArgasinthe10-3torrrange• AnArplasmaisignited(Ar+ +e-)byapplyinganelectricfield• Atargetcomposedoftheintendedmetalfordepositionisbiased
negatively• Ar+ ionsattractedtothetargetcollideanddislodgeatomsofthetarget
material• Someoftheseatomscollidewiththesubstratematerialandbond
formingadepositedfilm• ThefilmisalsobombardedwithAratoms
TargetSputteringSchematic
SputterToolProcessSchematic
SputterToolProcessSchematic- Details
ThinFilmDepositionProcessSchematic
EK =½MAV2
E=KT
T =TSubstrate +TA
• Depositingatomshavekineticenergyfromthesputterprocess• Theycollidewiththesubstrate• Somelocalizedheatiscreated• Atomsdiffuseonthesurfacetolowenergysites• Diffusionisdrivenbythesubstratetemperatureandlocalizedheatfromcollisions• Smallnucleiformthatgrowandcoalesceintoafilm• Aratomsalsobombardthesurface
ArAr
SurfaceDiffusionProcess
1
2
3
EnergyofD
eposite
dAtom
1 2 3
LocationonSubstrate
IfTsubstrate istoolow,surfacediffusiondoesnotoccur,anddepositedatomtrappedathigherenergysites1or2.Thisresultsindefectformation(suchaspores)orintrinsicfilmstress.DiffusionscalesasTsubstrate/TM.
FilmStresswithSubstrateTemperature
• IntrinsicfilmstressdecreaseswithincreasingTsubstrate• RelevantparametertomeasurediffusionisT/TM•WithhigherTsubstrate,TCEstressbetweenthefilmandsubstrateincreases• Trade-offbetweenthese2factorsmustbedeterminedexperimentally
FromThornton,J.A.andHoffman,D.W.ThinFilmSolids,171:5-31(1989)
FilmGrowthMechanismsvs.ArgonPressure
Arbombardmentduringfilmgrowth• ForlowArpressure,timebetweenAr/Arcollisionsislong• Armean-free-pathislong• Arenergybombardingthefilmsurfaceishigh• “Atomicpeeningeffect”increasesfilmdensity• Producesfilmswithcompressivestressandsmoothsurfaces• For highArpressure,Armean-free-pathisshort• Arenergyislow• Noatomicpeening• Filmsarelowdensity,tensilestress,roughsurfaces
FilmMicrostructureandStressRelationship
CompressiveStress
TensileStress
FilmStressvs.ArgonPressure
StressTransitionPressureforDifferentMetals
KeyParametersintheSputterProcess- Tsubstrate
Tsubstrate/TMLowextrinsicCTEfilmstressduetosmallΔTfromTsubstrate to25C
Stronglayeradhesion.HighTsubstrate resultsinsurfacediffusionofdepositingatomstohighestbondstrengthsites.
BalancePoint
CriticalFilmProperties
KeyParametersintheSputterProcess- ArgonPressure
PargonLowPargon:Compressivefilmstress.Filmcanbuckle.
HighPargon:Tensilefilmstress.Filmcanpeel.Porousmicrostructure
BalancePoint
CriticalFilmProperties
Lowfilmstress.Densedeposit.
SputteredFilmMicrostructureMapping
SurfacePreparationPriortoSputterDeposition
• Cleanoffallcontamination– Organics– Polishingorlappingresidue
• Etchorannealawayanydamagedlayers– Micro-cracks– Createdduringlapping– Createdduringlaserprocessing
SurfacePreparationPriortoSputterDeposition
PreparationStage ProcessingApproach Example
CleanOrganics Plasma Clean O2 plasmaSiwafers
Cleanlappingsolutionsorhandlingcontamination
Alkaline soak Anodexcleaner
EliminateMicro-cracks Etchawaythedamagedlayer
Buffered oxideetchforSi
Eliminate Micro-cracks Heat treatmentnearsinteringtemperaturetoannealawaycracks
Al2O3 T>1600C,forAlNT>1750C
ThinFilmDepositiononAlNandAl2O3
GoalsforThinFilmDepositiononAlNandAl2O3
• Thinfilmadhesiontooxideornitrideceramicsurface• Strongadhesionbetweenmultiplethinfilmlayers• Acceptablefilmstress(minimizeimpactonadhesion)• Preferredfailuremode:ceramicfracture• DiffusionbarriertopreventTiorWonsoldersurface• Oxidefreesolderlayer• Compatibilitywithmultiplesolders:PbSn,SAC,AuSn
AlNandAl2O3 CeramicSurfaceRequirements
Al2O3SurfaceFinish
As-Fired(Ticoatingonpartofsample)
Lapped
Al2O3 SurfacePreparation
• As-firedorPolished– Alkalineclean– Aciddip– ThoroughDIH2Orinse
• Lapped– Adjustlappingtominimizedamagelayerextent– Annealiffeasible– Alkalineclean,aciddip,DIH2Orinse
AlNSurfaceCharacterization
• As-firedsurfaces– Nomicro-crackspresent– Surfaceiscontouredbutsmooth– Needtocleanoffanycontaminants– Expectgoodthinfilmadhesion
• Lappedsurfaces– Micro-cracksandinter-granularfracture– Contaminationfromlappingmedia
AlNSurfaceFinish- AsFired
AlNSurfaceFinish- AsFired
AlNSurfaceFinish- AsFired
AlNSurfaceFinish- lapped
AlNSurfaceFinish- lapped
AdhesionLayer:Al2O3 andALNThinFilmMetallization
WhatisRequiredforTwoMaterialstoStickTogether?
• Thetwomaterialsmustformabond.Thismeansthetotalenergyofthebondedmaterialislowerthanthesumoftheenergiesoftheindividualnon-bondedmaterials
EAB <EA +EB• Forchemicalbonds,thisenergydifferenceisthechangeinGibbs
FreeEnergy(ΔG).NegativeΔGmeansbondingisfavorable.• TherearetwocomponentsinΔG,EnthalpyΔHwhichischemical
energy,andEntropyΔS.• IfΔGisnegative,thenextrequirementisthatthematerialsare
broughtintointimatecontact witheachothersothatabondcanform.Thisinvolvesreactingandmixingonanatomiclevel.Italsorequiresdiffusionwhichisenhancedbytemperature
• EvenfornegativeΔG,materialsrequireanactivationenergyforabondtobegintoform.Thisenergyusuallycomesfromappliedheat.
AdhesiontoAl2O3 - ΔG
Metal Oxide ΔG(Kcal/mole)200C
Ti TiO2 -210
Ti Ti2O3 -225
Cr Cr2O3 -160
V V2O3 -180
Ta Ta2O5 -175
Nb NbO -175
Zr ZrO2 -240
Hf HfO2 -240
W WO3 -115
AdhesiontoAlN- ΔG
Metal Nitride ΔG(Kcal/mole)200C
Ti TiN -140
Zr ZrN -140
Nb Nb2N -90
Cr Cr2N,CrN -35
V VN -65
Ta TaN -100
OO
Ti
O
OAlO
AdhesionLayerSurfaceReaction- TiReactionwithOxygenandAluminum
Ti
OAl Al
AlAl Al Al Al
O
OO O
Al Al
O O
O O
Ti Ti Ti
O OTi=O=Al
Ti Ti TiTi
TiTi Ti
OOO
OAlO
PoorBaseVacuum- TiIsOxidized- NoAdhesionReaction
OAl Al
AlAl Al Al Al
O
OO O
Al Al
O O
O OO O
TiO O
Ti
Ti Ti
O
O
O
O
O
O
Ti/WandTiAdhesionLayerComparison
• TiandTI/Warethemostcommonlyusedbondinglayermaterials• Tihasstrongerchemicalbonding(larger-ΔG)withbothoxide(Al2O3)and
nitride(AlN)surfaces• WhashigheratomicmassthanTi(183gr/molvs.47gr/mol)andthus
higherkineticenergyuponimpactwiththesubstrate.Thisprovidesadditionalactivationenergyforbonding.
• TifilmsaremuchmoresensitivetobasevacuumbecauseofTihighaffinityforoxygen.Adhesionisdegradedforvacuums>10-6 torr.
• Ti/WfilmshavehigherresidualstressthanTiandfilmpropertiesaremuchmoredependentonArgonpressurethanTifilms
• Ti/WfilmscanbeetchwithH2O2 andthusdonotrequireHF.
Ti/WandTiAdhesionLayerComparison
• BothTi/WandTicanbeusedeffectively• ForTi,basevacuum<1x 10-6 torrtogetgoodadhesionto
Al2O3 andtosubsequentmetallayers• ForTi/W,Argonpressuremustbe7x 10-3 torrforlowfilm
stress• BecauseTi/Whasbothstrongchemicalbondingandhigher
depositionenergy,theprocesswindowislarger
ImpactofSubstrateTemperatureonTiAdhesiontoAl2O3
EnergyofD
eposite
dAtom
Ti AlAl
Al
O
Ti AlAl
O
O
Ti AlAl
Al
O
ModerateAdhesion
ModerateAdhesion
StrongAdhesion
Ti EB
KTsubstrate >EB forTitodiffusetostrongadhesionsite
ImpactofSubstrateTemperatureonTiAdhesiontoAl2O3
• IfTsubstrate istoolow,fractionofTiatpoorbondingsites(fewsurroundingOorNatoms)
• AdhesionofTilayeriscompromised• CMCexperience,Tsubstrate >150C(CMCused200C)• ThisisthesameforotherbondinglayerssuchasNitoTi,or
CutoTi.
ThinFilmBarrierLayersonAl2O2 andAlN
BarrierLayers
• Role(s)ofthebarrierlayer:– Preventdiffusionoftheadhesionlayeratoms(Ti,W,Cr)tothe
solderinterface– Actasasolderinterface– Actasseedmetalforsubsequentplatedlayers
• CommonBarrierlayermaterials:NiV,Pd,Pt• CommonBarrierSeedlayermaterials:NiCu,Cu• Keyrequirementsforsputteredbarrierlayer
– Bondwelltoadhesionlayer– Formalowstressdeposit– Formadensedeposit(nopores)– Wetsoldermaterialswell– Notformextensiveintermetalliccompoundswhenreacting
withsolder– Forseedmetalapplications:providelowelectricalresistance
BondingoftheBarrierLayertotheAdhesionLayer
Ti/Ni,Ti/Cu,Ti/Pd,Ti/Ptallhave(–ΔG)
Firstrequirementforbonding,negativeGibbsFreeEnergy(–ΔG)
O OOOO
O
BondingoftheBarrierLayertotheAdhesionLayer
Secondrequirementforbonding:bondingmaterialsinintimatecontact(nocontamination).Forsputteredlayers,thisrequiresalowbasevacuum(10-7 rangeforTi).Caseofapoorbasevacuumisillustratedbelow.
Ti Ti Ti
TiTi Ti
Ti Ti Ti
TiTi Ti
O O
OO O O O O
CuCu
Cu
Cu
Cu Tiispassivatedandnon-reactive.
BondingoftheBarrierLayertotheAdhesionLayer
Thirdrequirementforbondingmaterialscaninter-diffusetofindoptimumbondingsites
EnergyofD
eposite
dAtom
CuCu
Ti
Cu
ModerateAdhesion
ModerateAdhesion
StrongAdhesion
EBCu
CuCu
Ti
Ti
CuCu
Ti
Ti
KTsubstrate >EBSubstrateTemperaturemustbe>150Cduringdepositionforstrongestbondstoform
TypicalSputteringParametersforAl2O3 andAlN
TypicalConditionsforSputteringonAl2O3 andAlN
• Basevacuum– Inthe10-7 torrrangeforTiadhesionlayer– Below2x 10-6 torrforTi/W
• Argonpressure3-7x 10-3 torr– LesscriticalforTilayers– ForTi/W,5-7x 10-3 toreducestress
• Substratetemperature150-200C– Criticalparameter– Needstobeoptimizedforspecificmaterialsandsputtersystem– CMCused200CforTi/WonAlNwithexcellentresults– Needstobeconstantduringrun
• Power2KW
ThinFilmAdhesionTesting
• Therearenouniversalacceptedtestsformeasuringthinfilmadhesion
• MostusedtestisPeelTesting(ASTMD3167)• Mostadhesiontestsinfertheadhesivestrengthbysubjectingthe
filmtoanexternalloadandmeasuringthecriticalvaluewherefailureisobserved
• Usefulforroutinequalitycontrol• Mosttestmethodsmeasureadhesionbydelaminatingafilmfrom
thesubstrate– Energytobreakthethinfilmandsubstratebonds– Energytoplasticallydeformthethinfilmlayerandsubstratelayerasthe
filmispulledaway– Frictionofthethinfilmsurfaceandsubstratesurface
SchematicPeelTest
EnergytodeformthinfilmlayersM1 isincludedintheenergyrequiredtopeeloffthethinfilm.Ifthethinfilmisrelativelythick,ormadeofastiffmaterial,theplasticdeformationenergycanbecomparabletotheadhesionterm.Whatisactuallymeasuredintheinterfacialfracturetoughness.CouldbeasignificantfactorforDPCadhesionbecauseofthick,ductileCulayer.
Regionsdeformingplasticallyduringthepeeltestareshaded.
FundamentalTestsforMeasuringAdhesion
MeasurethestrainenergyreleaserateU(J/m2)orworkrequiredtopropagateacrackalongtheinterface
Indentationinitiatesaninterfacialcrack.Widthofresultingdelaminationblisterismeasured.MechanicalpropertiesoffilmmaterialsareusedtoderiveU.
FundamentalTestsforMeasuringAdhesion
Thesubstratelayeriscutandabendtestisusedtodriveacrackalongtheinterface.
FundamentalTests
• DevelopedatIntel,StanfordUandMotorolaforevaluatingsemiconductormetallizationschemes
• Requiresmathematicalmodelstointerpretdata• Value:
– Allowsoptimizationofadhesionseparatedfromothereffectssuchasfilmdeformation
– Canprovidefundamentalinformationthatcanbeusedtopredictreliability
– Allowsmeaningfulcomparisonofdifferentmaterials
PracticalAdhesionTesting
• Measureadhesionstrength+energytodeformlayerduringtesting
• Goodrelativemeasureofadhesioniffilmcharacteristicsareconstant
• Forexample,usefulforDPCifCuthicknessisuniform.
PeelTestApparatus
•Mechanicaltester(Instron)• Loadcell• Peelfixturedesignedforconstant90° peelangle• Peelforcevs Displacement
PeelTesting- TypicalMetaltoMetalPeel
FailureatCu/CrInterface
ExamplefromCMC:CeramicFailure
• CuNi/TiWonAlN• BrazedLeadPeel• Ceramicfailure• Ceramicfailureisdictatedbyflawpopulation
PracticalAdhesionTests- UsefulforWhat?
• ProcessOptimization• Specificproductspecificationsuchasaleadpullvalue
• PackageQualification– CharacterizeQualificationsamplesforeachcustomer– Adhesionvaluescanbetiedtocustomerestablishedreliability
data– Canevaluateadhesionatanytimerelativetoqualifiedsamples– Canuseadhesiondatafromqualificationtoestablishprocess
changesandalsotointroduceequipmentchanges• PeriodicQualityControl
TroubleshootingGuideforSputteringonAl2O3 orAlN
Issue LocationofIssue PotentialFactorstoAddress
Pooradhesion Ceramictometal Surface contaminationonceramic
Micro-crackdamagelayerpresentonceramic(intra ceramicandceramictometalfailure)
Thinfilmlayer withhighstress
Thinfilmdepositionsubstratetemperature toolow
Oxygencontaminationofadhesionlayerduringdepositionbecausebasevacuumistoohigh
Chemicalattack frompostthinfilmprocessing.Poresinthinfilm.
HighTemperature inducedCTEstress.Thinfilmdepositiontemperaturetoohigh.
TroubleshootingGuideforSputteringonAl2O3 orAlN
Issue LocationofIssue PotentialFactorstoAddress
Pooradhesion Adhesionlayertobarrierlayer
Oxygencontaminationofadhesionlayerduringdepositionbecausebasevacuumistoohigh
Barrierlayerwithhighstress.
Thinfilmdepositionsubstratetemperaturetoolow
Chemicalattack frompostthinfilmprocessing.Poresinbarrierthinfilmlayer.
HighTemperature inducedCTEstress.Thinfilmdepositiontemperaturetoohigh.
TroubleshootingGuideforSputteringonAl2O3 orAlN
Issue LocationofIssue PotentialFactorstoAddress
Blistersformafterexposuretoheat>300C
Ceramic andadhesionlayerdelamination
Pores intheceramicsurfaceresultinaporeinthethinfilmlayer.Afterexposuretopost-thinfilmchemicals,theseporestrapliquidsorgas.Uponheatexpose,theliquidsorgasexpandformingablister.
All ofthefactorsinslide61thatleadtopooroveralladhesionmayalsoleadtomorelocalizedblistering.
AdhesionLayerandBarrierLayerDelamination
All ofthefactorsinslide62thatleadtopooroveralladhesionmayalsoleadtomorelocalizedblistering