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27th May 2014
Silicon Carbide Power Electronics for Energy
Applications: the SPEED Project
FP7-NMP-2013-LARGE-7
Grant #: 604057
Applications: the SPEED Project
Daniel FernándezJosé Millán
www.speed-fp7.org
27th May 2014
Outline
• The SPEED Consortium
• The SPEED Project at a Glance
• The SPEED Strategy
• The SPEED WPs
27th May 2014
The SPEED Consortium
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SPEED Project at a Glance
SPEED aims at a breakthrough in SiC technology alon g the whole supply chain:
• Growth of high-quality SiC substrates and epitaxial -layers
• Fabrication of power devices in the 1.7kV / 10kV r ange
• Packaging and reliability
• SiC-based highly efficient power conversion cells
• Targets applications in energy: generation and T&D . No automotive, lightning, or traction. Targets Real-life applicati ons and field-tests in close cooperation with manufacturers of HV devices and a major electrical utility.
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• New methodologies will be adapted to SiC devices an d optimized to make them a practical reality
• The main targets are:
• Energy efficiency;
• Increased penetration potential for renewable energ ies;
• Indirectly: increased penetration potential for the EV
The SPEED Project at a Glance
• Indirectly: increased penetration potential for the EV
• superior power quality using more efficient power converters that exploit the reduced power losses of SiC
• Ultimately: cost savings in energy pricing!!
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• To this end
• suitable SiC substrates,
• epitaxial-layers,
• and HV devices shall be developed and implemented i n
two demonstrators:
• A cost-efficient solid-state transformer
The SPEED Project at a Glance
to support advanced grid smartness
and power quality
• A wind-turbine specific power converter
with improved capabilities
for generating AC and DC power
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The SPEED Value Chain Clusters
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The SPEED Strategy
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The SPEED WPs
WP No. Work package titleLead partic. short
name
Person-
months
WP0 Project Management, Roadmap Alignment INAEL 47
WP1 Advanced SiC Materials: Substrates and Epi NORSTEL 146
WP2 Medium-Voltage SiC Device and Packaging Technologies for Wind Power Applications INFINEON 237
WP3 High-Voltage SiC Device and Packaging Technologies for Power Transmission Applications ABB CRC 329WP3 High-Voltage SiC Device and Packaging Technologies for Power Transmission Applications ABB CRC 329
WP4 Advanced Characterisation & Reliability UNIHB 149
WP5 SiC-based Power Cells UNI OVIEDO 221
WP6 Demonstrators: Wind Converters and Solid State Transformers INAEL 59
WP7 Dissemination and Exploitation FhG IISB 58
TOTAL 1246
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• To develop improved 100mm SiC substrates suitable for the manufacturing of large area high-voltage devices.
• To reduce the cost of manufacturing SiC substrates in volume by developing 150mm diameter SiC crystal growth.
• To reduce the defect density of SiC epitaxial layers for the manufacturing of large area high-voltage unipolar devices with high yield.
• To supply SiC epitaxial layers with doping concentration less than 3e15/cm3,
WP1: Advanced SiC Materials: Substrates and Epi
• To supply SiC epitaxial layers with doping concentration less than 3e15/cm , thicknesses of 30-100µm, basal plane dislocation density of less than 0.1 cm-2 and lifetimes above 10µs to the fabrication of high voltage (>3.3kV), large area bipolar devices.
• To develop a production process for epitaxial material for very high voltage SiC devices.
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• The main objective of WP2 is the development of SiC power devices for the dedicated use in Wind power applications. The goal is to go through different learning cycles having all next steps in the development included. Beside the main target of 1700V components also an outlook into the potential of freewheeling diodes for higher blocking voltages should be developed conceptually and in form of first prototypes on chip level for the implementation in module prototypes.
WP2: Medium-Voltage SiC Device and Packaging Technologies for Wind Power Applications
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• To design and fabricate HV (>3.3kV) SiC diodes and MOSFETs.
• To design, develop and prototype suitable full SiC modules for HV applications.
• To define and deliver preliminary standards (large scale, cost) for SiC devices and packages.
WP3: High-Voltage SiC Device and Packaging Technologies for Power Transmission Applications
devices and packages.
• To provide a potential roadmap for SiC commercialization.
• To evaluate the potential of SiC bipolar technology for next devices generation.
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• WP4 aims for a thorough understanding of the robustness and reliability of high power silicon carbide devices and the consequences for power systems built of them. Device characteristics and limiting failure mechanisms have to be identified by detailed and dedicated measurements, long-term testing, and high-fidelity computer simulations. The resulting knowledge of robustness and reliability has to be quantified in terms of figures of merit and compiled into models, which can be referred to with a view to device and system optimisation.
WP4: Advanced Characterisation & Reliability
view to device and system optimisation.
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• Design and optimization of the auxiliary circuitry needed for controlling and protecting the SiC devices developed in the previous WPs.
• Designing and optimizing power converters for wind applications.
• Design of SiC-based solid state transformers (SST). This includes the selection of SST configurations; design and optimization for the SiC devices
WP5: SiC-based Power Cells
selection of SST configurations; design and optimization for the SiC devices of the cells forming the SST; design and control of the SST to fulfil the desired functionalities.
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Objectives for Wind Converters
• Develop testing system for new topology converters association testing.
• Optimize overall system main characteristics and protections such as short circuit capability and overload regulation.
• Analysis of grid event conditions.
• Build a laboratory low power scale system Test Bench.
Objectives for Solid State Transformers
WP6: Demonstrators: Wind Converters and Solid State Transformers
Objectives for Solid State Transformers
• Develop measurement, automation, communication, and control systems for a fully functional SST.
• Optimize short-circuit and overvoltage withstand capabilities of the SST, as well as the power losses and heating behavior real-life distribution grid conditions.
• Build a ready-to-use integrated fully-packaged SST unit to be deployed in field tests
• Develop a proposal of standardization for SSTs.
• Deploy and monitor a field test in a real distribution grid node.
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• The objective of this work package is to maximize project visibility and enable a quick take-up of project results. These objectives are to be achieved by means of implementing a set of dissemination actions and preparing for the exploitation of the project results by the partners. Although first priority will be given to the protection of the IP of all partners, a large subset of generic project results will be selected and shared with companies and research institutions especially in order to, on one hand, increase the knowledge on materials and device manufacturing; on the other hand, to
WP7: Dissemination and Exploitation
knowledge on materials and device manufacturing; on the other hand, to implement the devices into systems.
27th May 2014
Thank you for your attention
www.speed-fp7.org