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School of Chemical Engineering
SCALING OF THE ADHESION BETWEEN PARTICLES AND SURFACES FROM MICRON-SCALE TO THE NANOMETER
SCALE FOR PHOTOMASK CLEANING APPLICATIONS
Gautam Kumar, Shanna Smith, Florence Eschbach, Arun Ramamoorthy, Michael Salib, Sean Eichenlaub,
and Stephen Beaudoin
Purdue UniversitySchool of Chemical Engineering
Forney Hall of Chemical Engineering480 Stadium Mall Dr.
West Lafayette, Indiana 47907-2100Phone: (765) [email protected]
School of Chemical Engineering
Rationale• Mask cleaning processes can be more
quickly optimized if the magnitude of particle-mask adhesion forces known
• Mask layers and contaminants offering most difficult cleaning challenge can be identified
• Effects of solution properties on contaminant adhesion can be evaluated
• Range of adhesion forces for given contaminant/mask layer can be determined
School of Chemical Engineering
Particle Characteristics
5 μm
5 μm
Alumina Particle
• Ideal geometries • Can model contact area using classic
approaches• Contact mechanics (JKR, DMT…)• DLVO
• Uniform microscopic morphology• Empirical, semi-empirical
approaches
• Unusual geometry• Random microscopic morphology• Compression/deformation of
surface asperities• Chemical heterogeneities• Settling (tilting, shifting)• Statistical information
The Academic System The Real World
Polystyrene Latex Sphere (PSL sphere)
School of Chemical Engineering
Macroscopic Adhesion Model: DLVO Theory
EDLvdWA FFF +=
Total Adhesion Force
van der Waals Force
Electrostatic Double Layer Force
)h,a,d,A(fFvdW =
)h,d,,,(fFEDL κζε=
)I(f)pH,I(f
==
κζ
A = System Hamaker constantd = Particle diametera = Contact radiush = Particle-surface separation distanceε = Medium dielectric constantζ = Zeta potentialκ = Reciprocal double-layer thicknessI = Medium ionic strength
d
FA
Particle
2aSurface
School of Chemical Engineering
Electrostatic Double Layer (EDL) Force
Stern LayerDiffuse Layer
Ions in Bulk Solution
Negative Co-Ion
Positive Counter-Ion
Zeta Potential, ζ+
-
-
+
+
+
+
-
-
-
-
Surface
Diffuse Double Layerψ
Distance
ψsζ
Shear Plane
Outer Helmholtz Plane
Pot
entia
l
( )⎥⎥⎦
⎤
⎢⎢⎣
⎡−
+⋅
−⋅
+= −
−
−h
sp
sph
hsp
EDL eeed
F κκ
κ
ψψψψκψψεε
222
220 2
14
ψ approximated by ζ
School of Chemical Engineering
van der Waals (vdW) Force
-q
+q
lElectrons
Surface
μ = ql (instantaneous dipole moment)
Lithium atom
Surface
Electric field lines
Surfaceμ1μ2
Induced dipole moment
FvdW = FKeesom + FDebye + FLondon
permanent-permanentinduced-permanent induced-induced
School of Chemical Engineering
Distribution of Forces
Freq
uenc
y
Adhesion Force
Particles Mounted on AFM Cantilevers
Al2O3 Particle
PSL Particle
cantileverSample
Sample holder and translation
stage
Mounted particle
AFM Schematic
AFM Force Curvea
bc
de
Def
lect
ion d
ab
ec Adhesion
Force
Position
Particle Adhesion Measurements
School of Chemical Engineering
Surface Roughness and Adhesion5 μm PSL spheres in contact with
a silicon substrate in 0.03 M KNO3
Removal Force = Adhesion Force
0
40
80
120
160
200
1 2 3 4 5 6 7 8 9pH
Transition Region
Modified vdW for a smooth silicon surface
Rem
oval
For
ce (n
N)
Modified vdW for a rough silicon surface
School of Chemical Engineering
Geometry and Adhesion
-5.E-09
-4.E-09
-3.E-09
-2.E-09
-1.E-09
0.E+00
1.E-09
2.E-09
3.E-09
0E+00 2E-09 4E-09 6E-09 8E-09 1E-08Separation Distance (m)
Interaction Forces Ideal Surfaces
van der WaalsElectrostaticCombined DLVO
(a)
(b)
(c)
particle
surface
double layer
Dominant interaction region
Inte
ract
ion
Forc
e (N
)
-5.E-09
-4.E-09
-3.E-09
-2.E-09
-1.E-09
0.E+00
1.E-09
2.E-09
3.E-09
0E+00 2E-09 4E-09 6E-09 8E-09 1E-08Separation Distance (m)
Interaction Forces Ideal Surfaces
van der WaalsElectrostaticCombined DLVO
(a)
(b)
(c)
particle
surface
double layer
dominant interaction region
Inte
ract
ion
Forc
e (N
)
-2.E-08
-1.E-08
-5.E -09
0.E+00
5.E -09
1.E-08
0E+00 2E-09 4E-09 6E-09 8E-09 1E-08Separation Distance (m)
Inte
ract
ion
Forc
e (N
)
Interaction Forces Irregular Particles
van der WaalsElectrostaticCombined DLVO
(a)
(b)
(c)
-2.E-08
-1.E-08
-5.E -09
0.E+00
5.E -09
1.E-08
0E+00 2E-09 4E-09 6E-09 8E-09 1E-08Separation Distance (m)
Inte
ract
ion
Forc
e (N
)
Interaction Forces Irregular Particles
van der WaalsElectrostaticCombined DLVO
(a)
(b)
(c)
School of Chemical Engineering
Alumina Interactions with SiO2
0
10
20
30
40
50
60
70
80A
lum
ina
Adh
esio
n Fo
rce
(nN
)vdW Model Predictions
Model Predictions
Experimental Measurements
pH (Constant Ionic Strength 0.01 M)2 4 6 8
Electrostatic interactions do affect the adhesion force, which varies with pHLarge area between particle and wafer out of contactSmall contact area
School of Chemical Engineering
How to Describe?
5 μm
van der Waals
Combination of ideal shapes ( )
( ) ( ) ⎟⎟⎠
⎞⎜⎜⎝
⎛+
+−
+= −
−
−h
sp
sph
sph
ee
edF κκ
κ
ψψψψψψκεε
222
220 2
14
( ) ( )( )22
21212
02
cosh2sinh2
ψψκψψκ
εεκ−−= h
hF r
+
sphere-plate
plate-plate
sphere-sphere++
Hamaker Constant, A12
( ) ( ) ( ){ }3212
212
212
21211212
zzyyxx
dVdVCdU−+−+−
−=ρρ
Point-by-point additivity
2112
6hRAF =
21
21
6 RRRR
hAF
+−
=+
+3
12
12 hAFπ
=+
ψκψ 22 =∇
Tknze
Br
i ioi
εεκ
0
22∑=
( ) ( )( )22
21212
02
cosh2sinh2
ψψκψψκ
εεκ−−= h
hF r
Approximate Solutions Approximate Solutions
Computational Solutions Computational Solutions
Poisson-Boltzmann EquationElectrostatics
School of Chemical Engineering
Combined vdW, ES Interaction Models
Compression/DeformationCompression/Deformation
SEM(Geometry)
vdW + EDL ModelvdW + EDL Model
AFM(Topographic Data)
Generate MathematicalSurface RepresentationsGenerate Mathematical
Surface Representations
Contact SurfacesContact Surfaces
Load
(mN
)
force/depth profile
AFM Force MeasurementsAFM Force Measurements
3-D Reconstruction
ζ (mV) pH
IEP
Surface Potential
Removal Force StatisticsRemoval Force Statistics
Applied LoadApplied Load
School of Chemical Engineering
FFT Roughness Model
AFM scan of actual Cu surface FFT model Cu surface
F(x)
2πx
• Fourier transform of surface profile
• Reconstruction of surfaces generated with random phase angles
FFT with random phase
School of Chemical Engineering
Validation: PSL Adhesion to Evolving Surfaces Only vdW forces needed to describe adhesion
Rough Silicon Surface
Average Measured Value 127 nN
Average Measured Value
10 nN
Range of Observed
Values
Smooth Silicon Surface
Range of Observed
Values
Removal Force = Adhesion Force
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
1 21 41 61 81 101 121 141 161 181 201Removal Force (nN)
Freq
uenc
y
School of Chemical Engineering
PSL Interactions with SiO2
0
50
100
150
200
250
300PS
L A
dhes
ion
Forc
e (n
N)
vdW Model Predictions
Model PredictionsExperimental Measurements
2 4 6 8pH (Constant Ionic Strength 0.01 M)
• Electrostatic interactions do not have a significant effect at different pHs• Large contact area between sphere and wafer dominated by vdW
School of Chemical Engineering
Alumina Interactions with SiO2
0
10
20
30
40
50
60
70
80A
lum
ina
Adh
esio
n Fo
rce
(nN
)vdW Model Predictions
Model Predictions
Experimental Measurements
pH (Constant Ionic Strength 0.01 M)2 4 6 8
Electrostatic interactions do affect the adhesion force, which varies with pHLarge area between particle and wafer out of contactSmall contact area
School of Chemical Engineering
Nanoscale Adhesion Approach• Measure, model micron-
scale adhesion
• Extract vdW, ES constants
• Measure nano-scale adhesion
• Model adhesion using constants from micron-scale
• Can measure nano-scale adhesion
• Can model roughness and geometry effects
• Can predict nano-scale adhesion
School of Chemical Engineering
Silicon Dioxide Surface
AFM Image FFT model Regeneration
0 50 100 150 200 250
0
100
200
-20
-10
0
10
20
30
School of Chemical Engineering
Silicon Nitride Particle: Micron-Scale
FESEM image of a Si3N4 particle mounted on an AFM cantilever
Photomodeler Pro® model for the nitride particle
School of Chemical Engineering
Silicon Nitride Cantilevers: NanoscaleSharpened silicon nitride probe
Max ROC ~ 40nm
~2 μm~10nm
Region considered in force calculations
Geometry considered in modeling the force between nanoscale cantilevers and substrates
School of Chemical Engineering
Silicon Nitride Adhesion to Silicon Dioxide in Air
Tip ROC=12nm Tip ROC=36nm
School of Chemical Engineering
Silicon Nitride Adhesion to Silicon Dioxide in Water
Tip ROC=10nm Tip ROC=41nm
School of Chemical Engineering
Silicon Nitride Adhesion to Quartz in Water
Tip ROC=14nm Tip ROC=32nm
School of Chemical Engineering
Theory and Experiment: Silicon Nitride Adhesion to Silicon Dioxide in Air
0 20 40 60 80 100 120 140
Force (nN)
OTR8
MSCT
Particle
Syst
em
Tip ROC=12nm
Tip ROC=36nm
School of Chemical Engineering
Theory and Experiment: Silicon Nitride Adhesion to Silicon Dioxide in Water
0 2 4 6 8 10 12 14 16
Force (nN)
OTR8
MSCT
Particle
Syst
em
Tip ROC=10nm
Tip ROC=41nm
School of Chemical Engineering
Theory and Experiment: Silicon Nitride Adhesion to Quartz in Air
0 20 40 60 80
Force (nN)
OTR8
MSCT
Particle
Syst
em
Tip ROC=14nm
Tip ROC=32nm
School of Chemical Engineering
0 1 2 3 4 5 6 7 8
Force (nN)
OTR8
MSCT
Particle
Syst
emTheory and Experiment: Silicon Nitride
Adhesion to Quartz in Water
Tip ROC=14nm
Tip ROC=32nm
School of Chemical Engineering
Conclusions
• Micron- and nano-scale particle adhesion can be described by vdW and electrostatic force models
• Proper accounting for roughness and geometry is required
• Particle adhesion characterized by a distribution of adhesion forces– Reflective of the interaction of two rough surfaces
• Particles with highly nonuniform geometry can be influenced by electrostatic forces even when in contact with a substrate
School of Chemical Engineering
Acknowledgements• Financial support
– National Science Foundation • CAREER grant (CTS-9984620)
– NSF/SRC ERC for Environmentally-Benign Semiconductor Manufacturing
– State of Indiana 21st Century Fund– Intel– Praxair Microelectronics
• SEZ America• Stefan Myhajlenko
– Arizona State University Center for Solid State Electronics Research
• Ann Gelb– Arizona State University Mathematics