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Hindawi Publishing CorporationAdvances in Physical ChemistryVolume 2013 Article ID 578686 5 pageshttpdxdoiorg1011552013578686
Research ArticleThe Lattice Compatibility Theory LCTPhysical and Chemical Arguments fromthe Growth Behavior of Doped Compounds in terms ofBandgap Distortion and Magnetic Effects
K Boubaker
Ecole Superieure de Sciences et Techniques de Tunis (ESSTT) Universite de Tunis 63 Rue Sidi Jabeur Mahdia 5100 Tunisia
Correspondence should be addressed to K Boubaker mmbb11112000yahoofr
Received 21 January 2013 Revised 2 April 2013 Accepted 20 May 2013
Academic Editor Kenneth Ruud
Copyright copy 2013 K Boubaker This is an open access article distributed under the Creative Commons Attribution License whichpermits unrestricted use distribution and reproduction in any medium provided the original work is properly cited
Physical and chemical arguments for the recently discussed materials-related Lattice Compatibility Theory are presented Thediscussed arguments are based on some differences of Mn ions incorporation kinetics inside some compounds These differenceshave been evaluated and quantified in terms of alteration of bandgap edges magnetic patterns and Faraday effect
1 Introduction
Bismuth oxides are nanocrystalline fluorite-type materialswhich exhibit unexpected lattice expansion during dopingstagesThey are used in various domains such as transparentceramic glass microelectronics sensor technology opticalcoatings surface acoustic wave devices and gas sensing [1ndash9] Bismuth ternary oxides such as Bi
12SiO20 Bi4Ge3O12 and
Bi4Ti3O12 usually exhibit high oxide ionic conductivity and
hence can been used as high-efficiency electrolyte materialsfor several applications such as oxygen sensors and solidoxide fuel cells (SOFC) [7ndash10] Bi
4Ge3O12
(BGO Bismuthgermanate) is a high density scintillation inorganic oxidewithcubic eulytite structure It is used in detectors in particlephysics gamma pulse spectroscopy aerospace physics andnuclear medicine Bi
4Ti3O12
(BTO Bismuth titanate) is alayered Aurivillius phase perovskite ferroelectric compoundhaving a Curie temperature of about 675∘C In its monoclinicferroelectric state Bi
4Ti3O12
has been pointed at as a goodcandidate for use in nonvolatilememories thanks to its excel-lent fatigue resistance during repeated polarization reversalsunder electrical solicitation In some recent studies [11 12]manganese-doped bismuth oxides showed nearly 10 timesthe ionic conductivity of zirconia despite a low stability inreducing environments
In this study a support to the Lattice CompatibilityTheory LCT is presented in terms of alteration of bandgapedges magnetic patterns and Faraday effect The paper isorganized in the following way In Section 2 some relevantexperimental details along with main manganese-dopingfeatures are presented In Section 3 we present physicalparameters alteration analysis along with LCT principlesSection 4 is the conclusion
2 Samples Elaboration andMeasurement Techniques
Bi4Ti3O12
(BTO) Bi12SiO20
(BSO) and Bi4Ge3O12
(BGO)compounds have been prepared using the polymeric precur-sor and Czochralski [11ndash14] methods using titanium tetraiso-propoxide Bismuth acetate Bi
2O3 GeO
2and SiO
2as precur-
sors Complexation and pH adjustment were achieved usingwet ethylene glycol and ammonium hydroxide respectivelyMn-doping has been achieved using manganese carbonateMnCO
3and manganese oxide MnO
2in various proportions
Static magnetization and field dependence of magne-tization were measured at different applied fields in thetemperature range 2ndash350K with a SQUID magnetometer(QuantumDesign for 0ndash5 T field range) Measurements have
2 Advances in Physical Chemistry
been carried out as guides to determine zero field cooling(ZFC) molar susceptibility
Verdet coefficient 119881 measurement within the visiblespectral domain has been obtained using a Faraday rotatorwhich consists of a solenoid wrapped around a transparentdielectric material along with four symmetric coils whichproduce controlled AC magnetic fields The control unit wasequipped with a ldquoNew Focus Modelrdquo 8702 PCB mountablesingle-axis driver
Finally X-ray diffraction analysis of all prepared com-pounds was performed by a copper-source diffractometer(Analytical X Pert PROMPD) with the wavelength 120582 =
154056 A while optical absorption spectra were measuredon double-side polished parallel crystal plates using a SPM-2monochromator within accuracy of plusmn2 nm
3 Results and Discussion
31 Mn-Doping Patterns in terms of Bandgap Magnetizationand Faraday Effects In order to understand bandgap edgesalteration following doping agent insertion in host structuresUrbach energy 119864
119906has been determined for doped and
undoped samples through the equations
ln (120572 (ℎ])) = ln (1205720) +
ℎ]
119864119906
119864119906= 120572 (ℎ]) (
119889 [120572 (ℎ])]
119889 [ℎ]])
minus1
= ℎ[119889
119889](ln120572 (]))]
minus1
(1)
where 120572(ℎ]) represents for each sample the experimentallydeduced optical absorption profile
Urbach energy 119864119906is a measure of the inhomogenoeus
disorder and atomic scale dispersion inside structures as itindicates the width of the band tails of the localized statesin presence of defects (Figure 1) Its analytical formulation isdeduced by taking into account three components structuraldisorder carrier-phonon interaction and carrier-impurity
119864119906=
Structural disorder⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞1
2119896119861119880120579119863
+
Carrier-phonon interaction⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞
1198654120587211988521199024119898lowast1198713
119863
9radic31205762ℎ2
+
Carrier-impurity⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞
1198651015840 coth( 119865
10158401015840
2119896119861119879)
(2)
with Boltzmann constant 119880 lattice strain related with thestructural disorder 120579
119863 Debye temperature 119871
119863 Debye
length119898lowast Carrier effectivemass119885 impurity charge 119902 elec-tron charge 120576 static dielectric permittivity ℎ Planckrsquos con-stant and 119865 1198651015840 11986510158401015840 constants
The width of the localized states (band tail energy orUrbach energy 119864
119906) has been estimated from the slopes of the
plots of ln120572(]) versus energy ℎ] (Figure 2)Figure 3 reports the temperature-dependent zero field
cooling (ZFC)molar susceptibility 120594mol for BTO- BGO- andBSO- doped samples All the samples show clear transitionsfrom a paramagnetic (P) to a ferromagnetic (F) state For all
Density of states
Valence band
Intrinsiclevels
Conduction bandEner
gy
Ec
E
Defects
Wavevector
Figure 1 Urbach tailing and localized states in presence of defects
4
35
3
25
2
15
1
05
02 22 24 26 28 3
E (eV)
ln(120572)
BSO BTO BGOUndopedDoped
UndopedDoped
UndopedDoped
Figure 2 Plots of (ln120572(])) versus energy ℎ] (as guides for evaluat-ing 119864119906)
the considered samples saturation of the magnetisation wasreached by applying magnetic field up to 5 T The magneticmoment value per unit formula obtained frommagnetizationsaturation is in good agreement with the expected ones fromthe stoichiometric formula
Faraday effect (or Faraday rotation effect) is a magneto-optical phenomenon which was revealed in the beginningof the last century by Michael Faraday [15ndash18] and whichconsists of an interaction between light and a magnetic fieldinside a givenmedium [18 19] It causes a rotation of the planeof polarization which is linearly proportional to the compo-nent of themagnetic field in the direction of propagationTheFaraday effect is based on the notion of circular birefringencewhich causes a difference of propagation speed between leftand right circularly polarized waves
Advances in Physical Chemistry 3
BGOMn
BSOMnBTOMn
30
25
20
15
10
5
00 50 100 150 200 250 300
120594m
ol(e
mumiddot
mol
minus1)
T (K)
Figure 3 Zero field cooling (ZFC) molar susceptibility versus tem-perature for the doped samples
30 31 32
BGOMn BSOMn BTOMn
33 34 35 36 37 38 39 402120579 (∘)
Inte
nsity
(au
)
Figure 4 XRD diagrams of the prepared compounds
Faraday effect has been evaluated for the obtained sam-ples through the measurements of alterations of the Verdetcoefficient 119881 within the visible spectral domain This coeffi-cient [19] is deduced via the measurement of the polarisationrotating angle 120579 using the formula
119881 =1
119861119897120579 (3)
with 119861 applied magnetic field strength (in oersteds) and 119897light path length through the medium
Verdet coefficient119881 changes for doped andundoped sam-ples have been gathered in Table 1 XRD diagrams are alsogathered in Figure 4
32 Lattice CompatibilityTheory LCT Fundaments and Analy-sis Stability of Mn ions within host matrix does not occur in
Table 1 Values of Verdet coefficient for doped and undoped sam-ples
Sample Verdet coefficient (a u)
BSO Undoped 0052Mn-doped 0039
BTO Undoped 0041Mn-doped 0038
BGO Undoped 0053Mn-doped 0047
Bi
Bi
O
O
TiGe
Si
203 pm
890 pm
768 p
m
Figure 5 BTO and BGO lattices structure
the same way inside the three studied lattice structures (BSOBGO and BTO) The Lattice Compatibility Theory [20ndash23]tries to give a plausible understanding of this disparity start-ing from intrinsic doping-element lattice properties in com-parison to those of the host In the studied materials changesin the studied parameters have been associated to a Mn-doping-induced disorder in BSO matrices against a relativeunaltered stability of both BGO and BTO For explanationpurposes main lattice constants of Mn intrinsic lattice havebeen compared to those of BSO BGO and BTO (Figure 5)Consecutively a thorough study of BSO structures revealed a
4 Advances in Physical Chemistry
Mn atom
Host
(a)
Mn atom
Host
(b)
Figure 6 Mn-element incorporation within host matrix (a) inter-stitial position (b) substitutional position
strong incompatibility with the Mn cubic lattice in terms ofboth bond length and incorporation kinetics (Figure 6)
Finally a possible explanation for the paradox of disparityof incorporation behaviors of doping agent is formulated asfollows
ldquothe stability of doping agents inside host struc-tures is favorized trough geometrical compati-bility expressed in terms of matching patterns
between doping agent intrinsic lattice and those ofthe hostrdquo
The many principles of this theory have been judged ingood agreement with results published in the recent literature[17ndash23]
4 Conclusion
The present study tries to give new arguments and fun-daments to the Lattice Compatibility Theory (LCT) Maininvestigations have carried out comparative studies of thebehavior of titanates (BTO) germanates (BGO) and sillenites(BSO) under transient-metal-doping Urbach tailing andFaraday effect along with lattice constants alterations havebeen compared and discussed Recoded results were in goodagreement with this theory A possible statement has beenformulated
ldquothe stability of doping agents inside host struc-tures is favorized trough geometrical compati-bility expressed in terms of matching patternsbetween doping agent intrinsic lattice and those ofthe hostrdquo
Nevertheless some additional investigationmay be need-ed in order to confirm validity and universality
References
[1] P C Joshi S B Krupanidhi andAMansingh ldquoRapid thermallyprocessed ferroelectric Bi
4Ti3O12thin filmsrdquo Journal of Applied
Physics vol 72 no 11 pp 5517ndash5519 1992[2] S E Cummins andL ECross ldquoElectrical and optical properties
of ferroelectric Bi4Ti3O12
single crystalsrdquo Journal of AppliedPhysics vol 39 no 5 7 pages 1968
[3] N F Mott Nobel Prize Lecture 1977[4] WW Li J J Zhu J DWu et al ldquoComposition and temperature
dependence of electronic and optical properties in manganesedoped tin dioxide films on quartz substrates prepared by pulsedlaser depositionrdquo ACS Applied Materials and Interfaces vol 2no 8 pp 2325ndash2332 2010
[5] H Kimura T Fukumura M Kawasaki K Inaba T HasegawaandHKoinuma ldquoRutile-type oxide-dilutedmagnetic semicon-ductor Mn-doped SnO
2rdquo Applied Physics Letters vol 80 no 1
pp 94ndash96 2002[6] S J Liu C Y Liu J Y Juang and H W Fang ldquoRoom-tem-
perature ferromagnetism in Zn and Mn codoped SnO2filmsrdquo
Journal of Applied Physics vol 105 no 1 4 pages 2009[7] B Liu C W Cheng R Chen Z X Shen H J Fan and H D
Sun ldquoFine structure of ultraviolet photoluminescence of tinoxide nanowiresrdquo Journal of Physical Chemistry C vol 114 no8 pp 3407ndash3410 2010
[8] G Sanon R Rup and A Mansingh ldquoBand-gap narrowing andband structure in degenerate tin oxide (SnO
2) filmsrdquo Physical
Review B vol 44 no 11 pp 5672ndash5680 1991[9] L F Jiang W Z Shen and Q X Guo ldquoTemperature depen-
dence of the optical properties of AlInNrdquo Journal of AppliedPhysics vol 106 no 1 8 pages 2009
[10] D Davazoglou ldquoDetermination of optical dispersion and filmthickness of semiconducting disordered layers by transmission
Advances in Physical Chemistry 5
measurements application for chemically vapor deposited Siand SnO
2filmrdquo Applied Physics Letters vol 70 no 2 3 pages
1997[11] S P S Badwal andK Foger ldquoMaterials for solid oxide fuel cellsrdquo
Materials Forum vol 21 pp 187ndash224 1997[12] W Schafer A Koch U Herold-Schmidt and D Stolten ldquoMate-
rials interfaces and production techniques for planar solidoxide fuel cellsrdquo Solid State Ionics vol 86ndash88 no 2 pp 1235ndash1239 1996
[13] W Wardzynski H Szymczak K Pataj T Lukasiewicz and JZmija ldquoLight induced charge transfer processes in Cr dopedBi12GeO20and Bi
12SiO20single crystalsrdquo Journal of Physics and
Chemistry of Solids vol 43 no 8 pp 767ndash769 1982[14] H Chen W Zhu E Kaxiras and Z Zhang ldquoOptimization of
Mn doping in group-IV-based dilute magnetic semiconductorsby electronic codopantsrdquo Physical Review B vol 79 no 23 13pages 2009
[15] M Bass Handbook of Optics vol 2 McGraw-Hill 2nd edition1995
[16] D A VanBaak ldquoResonant Faraday rotation as a probe of atomicdispersionrdquo American Journal of Physics vol 64 no 6 p 7241996
[17] C D Hodgman Handbook of Chemistry and Physics vol 2Chemical Rubber Publishing 35th edition 1953
[18] J H van der Merwe ldquoStrain relaxation in epitaxial overlayersrdquoJournal of Electronic Materials vol 20 no 10 pp 793ndash803 1991
[19] M Ichimura and J Narayan ldquoAtomistic study of dislocationnucleation in Ge(001)Si heterostructusesrdquo Philosophical Mag-azine A vol 72 no 2 pp 281ndash295 1995
[20] P Petkova and K Boubaker ldquoThe Lattice Compatibility Theory(LCT) an attempt to explain Urbach tailing patterns in copper-doped bismuth sillenites (BSO) and germanates (BGO)rdquo Jour-nal of Alloys and Compounds vol 546 pp 176ndash179 2013
[21] K Boubaker ldquoPreludes to the lattice compatibility theory LCTurbach tailing controversial behavior in some nanocom-poundsrdquo ISRN Nanomaterials vol 2012 Article ID 173198 4pages 2012
[22] K Boubaker ldquoThe lattice compatibility theory arguments forrecorded I-III-O
2ternary oxide ceramics instability at low
temperatures beside ternary telluride and sulphide ceramicsrdquoJournal of Ceramics vol 2013 Article ID 734015 6 pages 2013
[23] K BoubakerM Amlouk Y Louartassi andH Labiadh ldquoAboutunexpected crystallization behaviors of some ternary oxideand sulfide ceramics within lattice compatibility theory LCTframeworkrdquo Journal of the Australian Ceramics Society vol 49no 1 pp 115ndash117 2013
Submit your manuscripts athttpwwwhindawicom
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
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Carbohydrate Chemistry
International Journal of
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Journal of
Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Advances in
Physical Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom
Analytical Methods in Chemistry
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Bioinorganic Chemistry and ApplicationsHindawi Publishing Corporationhttpwwwhindawicom Volume 2014
SpectroscopyInternational Journal of
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The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014
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Chromatography Research International
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
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Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
CatalystsJournal of
2 Advances in Physical Chemistry
been carried out as guides to determine zero field cooling(ZFC) molar susceptibility
Verdet coefficient 119881 measurement within the visiblespectral domain has been obtained using a Faraday rotatorwhich consists of a solenoid wrapped around a transparentdielectric material along with four symmetric coils whichproduce controlled AC magnetic fields The control unit wasequipped with a ldquoNew Focus Modelrdquo 8702 PCB mountablesingle-axis driver
Finally X-ray diffraction analysis of all prepared com-pounds was performed by a copper-source diffractometer(Analytical X Pert PROMPD) with the wavelength 120582 =
154056 A while optical absorption spectra were measuredon double-side polished parallel crystal plates using a SPM-2monochromator within accuracy of plusmn2 nm
3 Results and Discussion
31 Mn-Doping Patterns in terms of Bandgap Magnetizationand Faraday Effects In order to understand bandgap edgesalteration following doping agent insertion in host structuresUrbach energy 119864
119906has been determined for doped and
undoped samples through the equations
ln (120572 (ℎ])) = ln (1205720) +
ℎ]
119864119906
119864119906= 120572 (ℎ]) (
119889 [120572 (ℎ])]
119889 [ℎ]])
minus1
= ℎ[119889
119889](ln120572 (]))]
minus1
(1)
where 120572(ℎ]) represents for each sample the experimentallydeduced optical absorption profile
Urbach energy 119864119906is a measure of the inhomogenoeus
disorder and atomic scale dispersion inside structures as itindicates the width of the band tails of the localized statesin presence of defects (Figure 1) Its analytical formulation isdeduced by taking into account three components structuraldisorder carrier-phonon interaction and carrier-impurity
119864119906=
Structural disorder⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞1
2119896119861119880120579119863
+
Carrier-phonon interaction⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞
1198654120587211988521199024119898lowast1198713
119863
9radic31205762ℎ2
+
Carrier-impurity⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞⏞
1198651015840 coth( 119865
10158401015840
2119896119861119879)
(2)
with Boltzmann constant 119880 lattice strain related with thestructural disorder 120579
119863 Debye temperature 119871
119863 Debye
length119898lowast Carrier effectivemass119885 impurity charge 119902 elec-tron charge 120576 static dielectric permittivity ℎ Planckrsquos con-stant and 119865 1198651015840 11986510158401015840 constants
The width of the localized states (band tail energy orUrbach energy 119864
119906) has been estimated from the slopes of the
plots of ln120572(]) versus energy ℎ] (Figure 2)Figure 3 reports the temperature-dependent zero field
cooling (ZFC)molar susceptibility 120594mol for BTO- BGO- andBSO- doped samples All the samples show clear transitionsfrom a paramagnetic (P) to a ferromagnetic (F) state For all
Density of states
Valence band
Intrinsiclevels
Conduction bandEner
gy
Ec
E
Defects
Wavevector
Figure 1 Urbach tailing and localized states in presence of defects
4
35
3
25
2
15
1
05
02 22 24 26 28 3
E (eV)
ln(120572)
BSO BTO BGOUndopedDoped
UndopedDoped
UndopedDoped
Figure 2 Plots of (ln120572(])) versus energy ℎ] (as guides for evaluat-ing 119864119906)
the considered samples saturation of the magnetisation wasreached by applying magnetic field up to 5 T The magneticmoment value per unit formula obtained frommagnetizationsaturation is in good agreement with the expected ones fromthe stoichiometric formula
Faraday effect (or Faraday rotation effect) is a magneto-optical phenomenon which was revealed in the beginningof the last century by Michael Faraday [15ndash18] and whichconsists of an interaction between light and a magnetic fieldinside a givenmedium [18 19] It causes a rotation of the planeof polarization which is linearly proportional to the compo-nent of themagnetic field in the direction of propagationTheFaraday effect is based on the notion of circular birefringencewhich causes a difference of propagation speed between leftand right circularly polarized waves
Advances in Physical Chemistry 3
BGOMn
BSOMnBTOMn
30
25
20
15
10
5
00 50 100 150 200 250 300
120594m
ol(e
mumiddot
mol
minus1)
T (K)
Figure 3 Zero field cooling (ZFC) molar susceptibility versus tem-perature for the doped samples
30 31 32
BGOMn BSOMn BTOMn
33 34 35 36 37 38 39 402120579 (∘)
Inte
nsity
(au
)
Figure 4 XRD diagrams of the prepared compounds
Faraday effect has been evaluated for the obtained sam-ples through the measurements of alterations of the Verdetcoefficient 119881 within the visible spectral domain This coeffi-cient [19] is deduced via the measurement of the polarisationrotating angle 120579 using the formula
119881 =1
119861119897120579 (3)
with 119861 applied magnetic field strength (in oersteds) and 119897light path length through the medium
Verdet coefficient119881 changes for doped andundoped sam-ples have been gathered in Table 1 XRD diagrams are alsogathered in Figure 4
32 Lattice CompatibilityTheory LCT Fundaments and Analy-sis Stability of Mn ions within host matrix does not occur in
Table 1 Values of Verdet coefficient for doped and undoped sam-ples
Sample Verdet coefficient (a u)
BSO Undoped 0052Mn-doped 0039
BTO Undoped 0041Mn-doped 0038
BGO Undoped 0053Mn-doped 0047
Bi
Bi
O
O
TiGe
Si
203 pm
890 pm
768 p
m
Figure 5 BTO and BGO lattices structure
the same way inside the three studied lattice structures (BSOBGO and BTO) The Lattice Compatibility Theory [20ndash23]tries to give a plausible understanding of this disparity start-ing from intrinsic doping-element lattice properties in com-parison to those of the host In the studied materials changesin the studied parameters have been associated to a Mn-doping-induced disorder in BSO matrices against a relativeunaltered stability of both BGO and BTO For explanationpurposes main lattice constants of Mn intrinsic lattice havebeen compared to those of BSO BGO and BTO (Figure 5)Consecutively a thorough study of BSO structures revealed a
4 Advances in Physical Chemistry
Mn atom
Host
(a)
Mn atom
Host
(b)
Figure 6 Mn-element incorporation within host matrix (a) inter-stitial position (b) substitutional position
strong incompatibility with the Mn cubic lattice in terms ofboth bond length and incorporation kinetics (Figure 6)
Finally a possible explanation for the paradox of disparityof incorporation behaviors of doping agent is formulated asfollows
ldquothe stability of doping agents inside host struc-tures is favorized trough geometrical compati-bility expressed in terms of matching patterns
between doping agent intrinsic lattice and those ofthe hostrdquo
The many principles of this theory have been judged ingood agreement with results published in the recent literature[17ndash23]
4 Conclusion
The present study tries to give new arguments and fun-daments to the Lattice Compatibility Theory (LCT) Maininvestigations have carried out comparative studies of thebehavior of titanates (BTO) germanates (BGO) and sillenites(BSO) under transient-metal-doping Urbach tailing andFaraday effect along with lattice constants alterations havebeen compared and discussed Recoded results were in goodagreement with this theory A possible statement has beenformulated
ldquothe stability of doping agents inside host struc-tures is favorized trough geometrical compati-bility expressed in terms of matching patternsbetween doping agent intrinsic lattice and those ofthe hostrdquo
Nevertheless some additional investigationmay be need-ed in order to confirm validity and universality
References
[1] P C Joshi S B Krupanidhi andAMansingh ldquoRapid thermallyprocessed ferroelectric Bi
4Ti3O12thin filmsrdquo Journal of Applied
Physics vol 72 no 11 pp 5517ndash5519 1992[2] S E Cummins andL ECross ldquoElectrical and optical properties
of ferroelectric Bi4Ti3O12
single crystalsrdquo Journal of AppliedPhysics vol 39 no 5 7 pages 1968
[3] N F Mott Nobel Prize Lecture 1977[4] WW Li J J Zhu J DWu et al ldquoComposition and temperature
dependence of electronic and optical properties in manganesedoped tin dioxide films on quartz substrates prepared by pulsedlaser depositionrdquo ACS Applied Materials and Interfaces vol 2no 8 pp 2325ndash2332 2010
[5] H Kimura T Fukumura M Kawasaki K Inaba T HasegawaandHKoinuma ldquoRutile-type oxide-dilutedmagnetic semicon-ductor Mn-doped SnO
2rdquo Applied Physics Letters vol 80 no 1
pp 94ndash96 2002[6] S J Liu C Y Liu J Y Juang and H W Fang ldquoRoom-tem-
perature ferromagnetism in Zn and Mn codoped SnO2filmsrdquo
Journal of Applied Physics vol 105 no 1 4 pages 2009[7] B Liu C W Cheng R Chen Z X Shen H J Fan and H D
Sun ldquoFine structure of ultraviolet photoluminescence of tinoxide nanowiresrdquo Journal of Physical Chemistry C vol 114 no8 pp 3407ndash3410 2010
[8] G Sanon R Rup and A Mansingh ldquoBand-gap narrowing andband structure in degenerate tin oxide (SnO
2) filmsrdquo Physical
Review B vol 44 no 11 pp 5672ndash5680 1991[9] L F Jiang W Z Shen and Q X Guo ldquoTemperature depen-
dence of the optical properties of AlInNrdquo Journal of AppliedPhysics vol 106 no 1 8 pages 2009
[10] D Davazoglou ldquoDetermination of optical dispersion and filmthickness of semiconducting disordered layers by transmission
Advances in Physical Chemistry 5
measurements application for chemically vapor deposited Siand SnO
2filmrdquo Applied Physics Letters vol 70 no 2 3 pages
1997[11] S P S Badwal andK Foger ldquoMaterials for solid oxide fuel cellsrdquo
Materials Forum vol 21 pp 187ndash224 1997[12] W Schafer A Koch U Herold-Schmidt and D Stolten ldquoMate-
rials interfaces and production techniques for planar solidoxide fuel cellsrdquo Solid State Ionics vol 86ndash88 no 2 pp 1235ndash1239 1996
[13] W Wardzynski H Szymczak K Pataj T Lukasiewicz and JZmija ldquoLight induced charge transfer processes in Cr dopedBi12GeO20and Bi
12SiO20single crystalsrdquo Journal of Physics and
Chemistry of Solids vol 43 no 8 pp 767ndash769 1982[14] H Chen W Zhu E Kaxiras and Z Zhang ldquoOptimization of
Mn doping in group-IV-based dilute magnetic semiconductorsby electronic codopantsrdquo Physical Review B vol 79 no 23 13pages 2009
[15] M Bass Handbook of Optics vol 2 McGraw-Hill 2nd edition1995
[16] D A VanBaak ldquoResonant Faraday rotation as a probe of atomicdispersionrdquo American Journal of Physics vol 64 no 6 p 7241996
[17] C D Hodgman Handbook of Chemistry and Physics vol 2Chemical Rubber Publishing 35th edition 1953
[18] J H van der Merwe ldquoStrain relaxation in epitaxial overlayersrdquoJournal of Electronic Materials vol 20 no 10 pp 793ndash803 1991
[19] M Ichimura and J Narayan ldquoAtomistic study of dislocationnucleation in Ge(001)Si heterostructusesrdquo Philosophical Mag-azine A vol 72 no 2 pp 281ndash295 1995
[20] P Petkova and K Boubaker ldquoThe Lattice Compatibility Theory(LCT) an attempt to explain Urbach tailing patterns in copper-doped bismuth sillenites (BSO) and germanates (BGO)rdquo Jour-nal of Alloys and Compounds vol 546 pp 176ndash179 2013
[21] K Boubaker ldquoPreludes to the lattice compatibility theory LCTurbach tailing controversial behavior in some nanocom-poundsrdquo ISRN Nanomaterials vol 2012 Article ID 173198 4pages 2012
[22] K Boubaker ldquoThe lattice compatibility theory arguments forrecorded I-III-O
2ternary oxide ceramics instability at low
temperatures beside ternary telluride and sulphide ceramicsrdquoJournal of Ceramics vol 2013 Article ID 734015 6 pages 2013
[23] K BoubakerM Amlouk Y Louartassi andH Labiadh ldquoAboutunexpected crystallization behaviors of some ternary oxideand sulfide ceramics within lattice compatibility theory LCTframeworkrdquo Journal of the Australian Ceramics Society vol 49no 1 pp 115ndash117 2013
Submit your manuscripts athttpwwwhindawicom
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Inorganic ChemistryInternational Journal of
Hindawi Publishing Corporation httpwwwhindawicom Volume 2014
International Journal ofPhotoenergy
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Carbohydrate Chemistry
International Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Advances in
Physical Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom
Analytical Methods in Chemistry
Journal of
Volume 2014
Bioinorganic Chemistry and ApplicationsHindawi Publishing Corporationhttpwwwhindawicom Volume 2014
SpectroscopyInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014
Medicinal ChemistryInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Chromatography Research International
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Applied ChemistryJournal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Theoretical ChemistryJournal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Spectroscopy
Analytical ChemistryInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Quantum Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Organic Chemistry International
ElectrochemistryInternational Journal of
Hindawi Publishing Corporation httpwwwhindawicom Volume 2014
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
CatalystsJournal of
Advances in Physical Chemistry 3
BGOMn
BSOMnBTOMn
30
25
20
15
10
5
00 50 100 150 200 250 300
120594m
ol(e
mumiddot
mol
minus1)
T (K)
Figure 3 Zero field cooling (ZFC) molar susceptibility versus tem-perature for the doped samples
30 31 32
BGOMn BSOMn BTOMn
33 34 35 36 37 38 39 402120579 (∘)
Inte
nsity
(au
)
Figure 4 XRD diagrams of the prepared compounds
Faraday effect has been evaluated for the obtained sam-ples through the measurements of alterations of the Verdetcoefficient 119881 within the visible spectral domain This coeffi-cient [19] is deduced via the measurement of the polarisationrotating angle 120579 using the formula
119881 =1
119861119897120579 (3)
with 119861 applied magnetic field strength (in oersteds) and 119897light path length through the medium
Verdet coefficient119881 changes for doped andundoped sam-ples have been gathered in Table 1 XRD diagrams are alsogathered in Figure 4
32 Lattice CompatibilityTheory LCT Fundaments and Analy-sis Stability of Mn ions within host matrix does not occur in
Table 1 Values of Verdet coefficient for doped and undoped sam-ples
Sample Verdet coefficient (a u)
BSO Undoped 0052Mn-doped 0039
BTO Undoped 0041Mn-doped 0038
BGO Undoped 0053Mn-doped 0047
Bi
Bi
O
O
TiGe
Si
203 pm
890 pm
768 p
m
Figure 5 BTO and BGO lattices structure
the same way inside the three studied lattice structures (BSOBGO and BTO) The Lattice Compatibility Theory [20ndash23]tries to give a plausible understanding of this disparity start-ing from intrinsic doping-element lattice properties in com-parison to those of the host In the studied materials changesin the studied parameters have been associated to a Mn-doping-induced disorder in BSO matrices against a relativeunaltered stability of both BGO and BTO For explanationpurposes main lattice constants of Mn intrinsic lattice havebeen compared to those of BSO BGO and BTO (Figure 5)Consecutively a thorough study of BSO structures revealed a
4 Advances in Physical Chemistry
Mn atom
Host
(a)
Mn atom
Host
(b)
Figure 6 Mn-element incorporation within host matrix (a) inter-stitial position (b) substitutional position
strong incompatibility with the Mn cubic lattice in terms ofboth bond length and incorporation kinetics (Figure 6)
Finally a possible explanation for the paradox of disparityof incorporation behaviors of doping agent is formulated asfollows
ldquothe stability of doping agents inside host struc-tures is favorized trough geometrical compati-bility expressed in terms of matching patterns
between doping agent intrinsic lattice and those ofthe hostrdquo
The many principles of this theory have been judged ingood agreement with results published in the recent literature[17ndash23]
4 Conclusion
The present study tries to give new arguments and fun-daments to the Lattice Compatibility Theory (LCT) Maininvestigations have carried out comparative studies of thebehavior of titanates (BTO) germanates (BGO) and sillenites(BSO) under transient-metal-doping Urbach tailing andFaraday effect along with lattice constants alterations havebeen compared and discussed Recoded results were in goodagreement with this theory A possible statement has beenformulated
ldquothe stability of doping agents inside host struc-tures is favorized trough geometrical compati-bility expressed in terms of matching patternsbetween doping agent intrinsic lattice and those ofthe hostrdquo
Nevertheless some additional investigationmay be need-ed in order to confirm validity and universality
References
[1] P C Joshi S B Krupanidhi andAMansingh ldquoRapid thermallyprocessed ferroelectric Bi
4Ti3O12thin filmsrdquo Journal of Applied
Physics vol 72 no 11 pp 5517ndash5519 1992[2] S E Cummins andL ECross ldquoElectrical and optical properties
of ferroelectric Bi4Ti3O12
single crystalsrdquo Journal of AppliedPhysics vol 39 no 5 7 pages 1968
[3] N F Mott Nobel Prize Lecture 1977[4] WW Li J J Zhu J DWu et al ldquoComposition and temperature
dependence of electronic and optical properties in manganesedoped tin dioxide films on quartz substrates prepared by pulsedlaser depositionrdquo ACS Applied Materials and Interfaces vol 2no 8 pp 2325ndash2332 2010
[5] H Kimura T Fukumura M Kawasaki K Inaba T HasegawaandHKoinuma ldquoRutile-type oxide-dilutedmagnetic semicon-ductor Mn-doped SnO
2rdquo Applied Physics Letters vol 80 no 1
pp 94ndash96 2002[6] S J Liu C Y Liu J Y Juang and H W Fang ldquoRoom-tem-
perature ferromagnetism in Zn and Mn codoped SnO2filmsrdquo
Journal of Applied Physics vol 105 no 1 4 pages 2009[7] B Liu C W Cheng R Chen Z X Shen H J Fan and H D
Sun ldquoFine structure of ultraviolet photoluminescence of tinoxide nanowiresrdquo Journal of Physical Chemistry C vol 114 no8 pp 3407ndash3410 2010
[8] G Sanon R Rup and A Mansingh ldquoBand-gap narrowing andband structure in degenerate tin oxide (SnO
2) filmsrdquo Physical
Review B vol 44 no 11 pp 5672ndash5680 1991[9] L F Jiang W Z Shen and Q X Guo ldquoTemperature depen-
dence of the optical properties of AlInNrdquo Journal of AppliedPhysics vol 106 no 1 8 pages 2009
[10] D Davazoglou ldquoDetermination of optical dispersion and filmthickness of semiconducting disordered layers by transmission
Advances in Physical Chemistry 5
measurements application for chemically vapor deposited Siand SnO
2filmrdquo Applied Physics Letters vol 70 no 2 3 pages
1997[11] S P S Badwal andK Foger ldquoMaterials for solid oxide fuel cellsrdquo
Materials Forum vol 21 pp 187ndash224 1997[12] W Schafer A Koch U Herold-Schmidt and D Stolten ldquoMate-
rials interfaces and production techniques for planar solidoxide fuel cellsrdquo Solid State Ionics vol 86ndash88 no 2 pp 1235ndash1239 1996
[13] W Wardzynski H Szymczak K Pataj T Lukasiewicz and JZmija ldquoLight induced charge transfer processes in Cr dopedBi12GeO20and Bi
12SiO20single crystalsrdquo Journal of Physics and
Chemistry of Solids vol 43 no 8 pp 767ndash769 1982[14] H Chen W Zhu E Kaxiras and Z Zhang ldquoOptimization of
Mn doping in group-IV-based dilute magnetic semiconductorsby electronic codopantsrdquo Physical Review B vol 79 no 23 13pages 2009
[15] M Bass Handbook of Optics vol 2 McGraw-Hill 2nd edition1995
[16] D A VanBaak ldquoResonant Faraday rotation as a probe of atomicdispersionrdquo American Journal of Physics vol 64 no 6 p 7241996
[17] C D Hodgman Handbook of Chemistry and Physics vol 2Chemical Rubber Publishing 35th edition 1953
[18] J H van der Merwe ldquoStrain relaxation in epitaxial overlayersrdquoJournal of Electronic Materials vol 20 no 10 pp 793ndash803 1991
[19] M Ichimura and J Narayan ldquoAtomistic study of dislocationnucleation in Ge(001)Si heterostructusesrdquo Philosophical Mag-azine A vol 72 no 2 pp 281ndash295 1995
[20] P Petkova and K Boubaker ldquoThe Lattice Compatibility Theory(LCT) an attempt to explain Urbach tailing patterns in copper-doped bismuth sillenites (BSO) and germanates (BGO)rdquo Jour-nal of Alloys and Compounds vol 546 pp 176ndash179 2013
[21] K Boubaker ldquoPreludes to the lattice compatibility theory LCTurbach tailing controversial behavior in some nanocom-poundsrdquo ISRN Nanomaterials vol 2012 Article ID 173198 4pages 2012
[22] K Boubaker ldquoThe lattice compatibility theory arguments forrecorded I-III-O
2ternary oxide ceramics instability at low
temperatures beside ternary telluride and sulphide ceramicsrdquoJournal of Ceramics vol 2013 Article ID 734015 6 pages 2013
[23] K BoubakerM Amlouk Y Louartassi andH Labiadh ldquoAboutunexpected crystallization behaviors of some ternary oxideand sulfide ceramics within lattice compatibility theory LCTframeworkrdquo Journal of the Australian Ceramics Society vol 49no 1 pp 115ndash117 2013
Submit your manuscripts athttpwwwhindawicom
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Inorganic ChemistryInternational Journal of
Hindawi Publishing Corporation httpwwwhindawicom Volume 2014
International Journal ofPhotoenergy
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Carbohydrate Chemistry
International Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Advances in
Physical Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom
Analytical Methods in Chemistry
Journal of
Volume 2014
Bioinorganic Chemistry and ApplicationsHindawi Publishing Corporationhttpwwwhindawicom Volume 2014
SpectroscopyInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014
Medicinal ChemistryInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Chromatography Research International
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Applied ChemistryJournal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Theoretical ChemistryJournal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Spectroscopy
Analytical ChemistryInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Quantum Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Organic Chemistry International
ElectrochemistryInternational Journal of
Hindawi Publishing Corporation httpwwwhindawicom Volume 2014
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
CatalystsJournal of
4 Advances in Physical Chemistry
Mn atom
Host
(a)
Mn atom
Host
(b)
Figure 6 Mn-element incorporation within host matrix (a) inter-stitial position (b) substitutional position
strong incompatibility with the Mn cubic lattice in terms ofboth bond length and incorporation kinetics (Figure 6)
Finally a possible explanation for the paradox of disparityof incorporation behaviors of doping agent is formulated asfollows
ldquothe stability of doping agents inside host struc-tures is favorized trough geometrical compati-bility expressed in terms of matching patterns
between doping agent intrinsic lattice and those ofthe hostrdquo
The many principles of this theory have been judged ingood agreement with results published in the recent literature[17ndash23]
4 Conclusion
The present study tries to give new arguments and fun-daments to the Lattice Compatibility Theory (LCT) Maininvestigations have carried out comparative studies of thebehavior of titanates (BTO) germanates (BGO) and sillenites(BSO) under transient-metal-doping Urbach tailing andFaraday effect along with lattice constants alterations havebeen compared and discussed Recoded results were in goodagreement with this theory A possible statement has beenformulated
ldquothe stability of doping agents inside host struc-tures is favorized trough geometrical compati-bility expressed in terms of matching patternsbetween doping agent intrinsic lattice and those ofthe hostrdquo
Nevertheless some additional investigationmay be need-ed in order to confirm validity and universality
References
[1] P C Joshi S B Krupanidhi andAMansingh ldquoRapid thermallyprocessed ferroelectric Bi
4Ti3O12thin filmsrdquo Journal of Applied
Physics vol 72 no 11 pp 5517ndash5519 1992[2] S E Cummins andL ECross ldquoElectrical and optical properties
of ferroelectric Bi4Ti3O12
single crystalsrdquo Journal of AppliedPhysics vol 39 no 5 7 pages 1968
[3] N F Mott Nobel Prize Lecture 1977[4] WW Li J J Zhu J DWu et al ldquoComposition and temperature
dependence of electronic and optical properties in manganesedoped tin dioxide films on quartz substrates prepared by pulsedlaser depositionrdquo ACS Applied Materials and Interfaces vol 2no 8 pp 2325ndash2332 2010
[5] H Kimura T Fukumura M Kawasaki K Inaba T HasegawaandHKoinuma ldquoRutile-type oxide-dilutedmagnetic semicon-ductor Mn-doped SnO
2rdquo Applied Physics Letters vol 80 no 1
pp 94ndash96 2002[6] S J Liu C Y Liu J Y Juang and H W Fang ldquoRoom-tem-
perature ferromagnetism in Zn and Mn codoped SnO2filmsrdquo
Journal of Applied Physics vol 105 no 1 4 pages 2009[7] B Liu C W Cheng R Chen Z X Shen H J Fan and H D
Sun ldquoFine structure of ultraviolet photoluminescence of tinoxide nanowiresrdquo Journal of Physical Chemistry C vol 114 no8 pp 3407ndash3410 2010
[8] G Sanon R Rup and A Mansingh ldquoBand-gap narrowing andband structure in degenerate tin oxide (SnO
2) filmsrdquo Physical
Review B vol 44 no 11 pp 5672ndash5680 1991[9] L F Jiang W Z Shen and Q X Guo ldquoTemperature depen-
dence of the optical properties of AlInNrdquo Journal of AppliedPhysics vol 106 no 1 8 pages 2009
[10] D Davazoglou ldquoDetermination of optical dispersion and filmthickness of semiconducting disordered layers by transmission
Advances in Physical Chemistry 5
measurements application for chemically vapor deposited Siand SnO
2filmrdquo Applied Physics Letters vol 70 no 2 3 pages
1997[11] S P S Badwal andK Foger ldquoMaterials for solid oxide fuel cellsrdquo
Materials Forum vol 21 pp 187ndash224 1997[12] W Schafer A Koch U Herold-Schmidt and D Stolten ldquoMate-
rials interfaces and production techniques for planar solidoxide fuel cellsrdquo Solid State Ionics vol 86ndash88 no 2 pp 1235ndash1239 1996
[13] W Wardzynski H Szymczak K Pataj T Lukasiewicz and JZmija ldquoLight induced charge transfer processes in Cr dopedBi12GeO20and Bi
12SiO20single crystalsrdquo Journal of Physics and
Chemistry of Solids vol 43 no 8 pp 767ndash769 1982[14] H Chen W Zhu E Kaxiras and Z Zhang ldquoOptimization of
Mn doping in group-IV-based dilute magnetic semiconductorsby electronic codopantsrdquo Physical Review B vol 79 no 23 13pages 2009
[15] M Bass Handbook of Optics vol 2 McGraw-Hill 2nd edition1995
[16] D A VanBaak ldquoResonant Faraday rotation as a probe of atomicdispersionrdquo American Journal of Physics vol 64 no 6 p 7241996
[17] C D Hodgman Handbook of Chemistry and Physics vol 2Chemical Rubber Publishing 35th edition 1953
[18] J H van der Merwe ldquoStrain relaxation in epitaxial overlayersrdquoJournal of Electronic Materials vol 20 no 10 pp 793ndash803 1991
[19] M Ichimura and J Narayan ldquoAtomistic study of dislocationnucleation in Ge(001)Si heterostructusesrdquo Philosophical Mag-azine A vol 72 no 2 pp 281ndash295 1995
[20] P Petkova and K Boubaker ldquoThe Lattice Compatibility Theory(LCT) an attempt to explain Urbach tailing patterns in copper-doped bismuth sillenites (BSO) and germanates (BGO)rdquo Jour-nal of Alloys and Compounds vol 546 pp 176ndash179 2013
[21] K Boubaker ldquoPreludes to the lattice compatibility theory LCTurbach tailing controversial behavior in some nanocom-poundsrdquo ISRN Nanomaterials vol 2012 Article ID 173198 4pages 2012
[22] K Boubaker ldquoThe lattice compatibility theory arguments forrecorded I-III-O
2ternary oxide ceramics instability at low
temperatures beside ternary telluride and sulphide ceramicsrdquoJournal of Ceramics vol 2013 Article ID 734015 6 pages 2013
[23] K BoubakerM Amlouk Y Louartassi andH Labiadh ldquoAboutunexpected crystallization behaviors of some ternary oxideand sulfide ceramics within lattice compatibility theory LCTframeworkrdquo Journal of the Australian Ceramics Society vol 49no 1 pp 115ndash117 2013
Submit your manuscripts athttpwwwhindawicom
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Inorganic ChemistryInternational Journal of
Hindawi Publishing Corporation httpwwwhindawicom Volume 2014
International Journal ofPhotoenergy
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Carbohydrate Chemistry
International Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Advances in
Physical Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom
Analytical Methods in Chemistry
Journal of
Volume 2014
Bioinorganic Chemistry and ApplicationsHindawi Publishing Corporationhttpwwwhindawicom Volume 2014
SpectroscopyInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014
Medicinal ChemistryInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Chromatography Research International
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Applied ChemistryJournal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Theoretical ChemistryJournal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Spectroscopy
Analytical ChemistryInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Quantum Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Organic Chemistry International
ElectrochemistryInternational Journal of
Hindawi Publishing Corporation httpwwwhindawicom Volume 2014
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
CatalystsJournal of
Advances in Physical Chemistry 5
measurements application for chemically vapor deposited Siand SnO
2filmrdquo Applied Physics Letters vol 70 no 2 3 pages
1997[11] S P S Badwal andK Foger ldquoMaterials for solid oxide fuel cellsrdquo
Materials Forum vol 21 pp 187ndash224 1997[12] W Schafer A Koch U Herold-Schmidt and D Stolten ldquoMate-
rials interfaces and production techniques for planar solidoxide fuel cellsrdquo Solid State Ionics vol 86ndash88 no 2 pp 1235ndash1239 1996
[13] W Wardzynski H Szymczak K Pataj T Lukasiewicz and JZmija ldquoLight induced charge transfer processes in Cr dopedBi12GeO20and Bi
12SiO20single crystalsrdquo Journal of Physics and
Chemistry of Solids vol 43 no 8 pp 767ndash769 1982[14] H Chen W Zhu E Kaxiras and Z Zhang ldquoOptimization of
Mn doping in group-IV-based dilute magnetic semiconductorsby electronic codopantsrdquo Physical Review B vol 79 no 23 13pages 2009
[15] M Bass Handbook of Optics vol 2 McGraw-Hill 2nd edition1995
[16] D A VanBaak ldquoResonant Faraday rotation as a probe of atomicdispersionrdquo American Journal of Physics vol 64 no 6 p 7241996
[17] C D Hodgman Handbook of Chemistry and Physics vol 2Chemical Rubber Publishing 35th edition 1953
[18] J H van der Merwe ldquoStrain relaxation in epitaxial overlayersrdquoJournal of Electronic Materials vol 20 no 10 pp 793ndash803 1991
[19] M Ichimura and J Narayan ldquoAtomistic study of dislocationnucleation in Ge(001)Si heterostructusesrdquo Philosophical Mag-azine A vol 72 no 2 pp 281ndash295 1995
[20] P Petkova and K Boubaker ldquoThe Lattice Compatibility Theory(LCT) an attempt to explain Urbach tailing patterns in copper-doped bismuth sillenites (BSO) and germanates (BGO)rdquo Jour-nal of Alloys and Compounds vol 546 pp 176ndash179 2013
[21] K Boubaker ldquoPreludes to the lattice compatibility theory LCTurbach tailing controversial behavior in some nanocom-poundsrdquo ISRN Nanomaterials vol 2012 Article ID 173198 4pages 2012
[22] K Boubaker ldquoThe lattice compatibility theory arguments forrecorded I-III-O
2ternary oxide ceramics instability at low
temperatures beside ternary telluride and sulphide ceramicsrdquoJournal of Ceramics vol 2013 Article ID 734015 6 pages 2013
[23] K BoubakerM Amlouk Y Louartassi andH Labiadh ldquoAboutunexpected crystallization behaviors of some ternary oxideand sulfide ceramics within lattice compatibility theory LCTframeworkrdquo Journal of the Australian Ceramics Society vol 49no 1 pp 115ndash117 2013
Submit your manuscripts athttpwwwhindawicom
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Inorganic ChemistryInternational Journal of
Hindawi Publishing Corporation httpwwwhindawicom Volume 2014
International Journal ofPhotoenergy
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Carbohydrate Chemistry
International Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Advances in
Physical Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom
Analytical Methods in Chemistry
Journal of
Volume 2014
Bioinorganic Chemistry and ApplicationsHindawi Publishing Corporationhttpwwwhindawicom Volume 2014
SpectroscopyInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014
Medicinal ChemistryInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Chromatography Research International
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Applied ChemistryJournal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Theoretical ChemistryJournal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Spectroscopy
Analytical ChemistryInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Quantum Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Organic Chemistry International
ElectrochemistryInternational Journal of
Hindawi Publishing Corporation httpwwwhindawicom Volume 2014
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
CatalystsJournal of
Submit your manuscripts athttpwwwhindawicom
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Inorganic ChemistryInternational Journal of
Hindawi Publishing Corporation httpwwwhindawicom Volume 2014
International Journal ofPhotoenergy
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Carbohydrate Chemistry
International Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Advances in
Physical Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom
Analytical Methods in Chemistry
Journal of
Volume 2014
Bioinorganic Chemistry and ApplicationsHindawi Publishing Corporationhttpwwwhindawicom Volume 2014
SpectroscopyInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014
Medicinal ChemistryInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Chromatography Research International
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Applied ChemistryJournal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Theoretical ChemistryJournal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Spectroscopy
Analytical ChemistryInternational Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Journal of
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Quantum Chemistry
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
Organic Chemistry International
ElectrochemistryInternational Journal of
Hindawi Publishing Corporation httpwwwhindawicom Volume 2014
Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014
CatalystsJournal of