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REMOVING SURFACE REMOVING SURFACE CONTAMINATES FROM CONTAMINATES FROM SILICON WAFERS SILICON WAFERS Jed Johnson Jed Johnson Brigham Young Brigham Young University University

REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

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REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS. Jed Johnson Brigham Young University. Reflectors in EUV range. EUV range is about 100-1000Å General Challenges: - multilayers required - absorption - high vacuum needed Applications - XUV lithography - Soft x-ray microscopy - PowerPoint PPT Presentation

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Page 1: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

REMOVING SURFACE REMOVING SURFACE CONTAMINATES FROM CONTAMINATES FROM

SILICON WAFERSSILICON WAFERS

Jed JohnsonJed JohnsonBrigham Young UniversityBrigham Young University

Page 2: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

Reflectors in EUV rangeReflectors in EUV rangeEUV range is about 100-EUV range is about 100-1000Å1000ÅGeneral Challenges:General Challenges:- multilayers required- multilayers required- absorption- absorption- high vacuum needed- high vacuum neededApplicationsApplications- XUV lithography- XUV lithography- Soft x-ray microscopy- Soft x-ray microscopy- Astronomy- AstronomyComplex index of refraction: Complex index of refraction: ñ=n+ik

Page 3: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

Hydrocarbon Contaminants Hydrocarbon Contaminants

Airborne hydrocarbons accumulate on mirror Airborne hydrocarbons accumulate on mirror surfaces.surfaces.

Page 4: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

Buildup RatesBuildup Rates

Spectroscopic Ellipsometry indicates the Spectroscopic Ellipsometry indicates the thickness of deposits.thickness of deposits.

Page 5: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

Hydrocarbon Buildups Lower Hydrocarbon Buildups Lower ReflectanceReflectance

Reduced Reflectance with Hydrocarbon Thickness. Reduced Reflectance with Hydrocarbon Thickness. Theoretical change in reflectance vs. grazing angle and Theoretical change in reflectance vs. grazing angle and organic thickness. (at λ=40.0 nm)organic thickness. (at λ=40.0 nm)

Page 6: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

Preparing a Standard ContaminantPreparing a Standard ContaminantDADMAC (polydiallyldimethyl-ammonium chloride) is used as the DADMAC (polydiallyldimethyl-ammonium chloride) is used as the standard contaminant which coats the surface.standard contaminant which coats the surface.Salt concentration affects shielding and eventual thickness of Salt concentration affects shielding and eventual thickness of DADMAC layer.DADMAC layer.

Page 7: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

Four Methods of Cleaning TestedFour Methods of Cleaning Tested

Opticlean® Opticlean®

Oxygen Plasma Oxygen Plasma

Excimer UV Lamp Excimer UV Lamp

Opticlean® + Oxygen Plasma Opticlean® + Oxygen Plasma

Page 8: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

Opticlean®Opticlean®ProcedureProcedure::

Applied with brush, left to dry, Applied with brush, left to dry, peeled off (DADMAC comes too)peeled off (DADMAC comes too)

Results:Results:2 nm polymer residue left 2 nm polymer residue left (ellipsometry)(ellipsometry)

XPS revealed the components of XPS revealed the components of Opticlean® (F,O,Si,C), but not Opticlean® (F,O,Si,C), but not heavier metals used in thin films. heavier metals used in thin films. Prominent thin-film lines: U-380 Prominent thin-film lines: U-380

eV, V-515 eV, Sc-400 eV.eV, V-515 eV, Sc-400 eV. No surface damage (SEM)No surface damage (SEM)

Page 9: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

Oxygen Plasma ProcedureOxygen Plasma ProcedureOxygen plasma is formed Oxygen plasma is formed between two capacitor between two capacitor plates by inducing a radio plates by inducing a radio frequency (RF) electric frequency (RF) electric current across the plates.current across the plates.High energy ions High energy ions mechanically break up mechanically break up molecular bonds of the molecular bonds of the surface molecules and surface molecules and blast them off surface.blast them off surface.

Atomic oxygen in the plasma Atomic oxygen in the plasma readily reacts with the readily reacts with the surface contaminants, surface contaminants, breaking them up into smaller breaking them up into smaller and more volatile pieces and more volatile pieces which easily evaporate.which easily evaporate.

Page 10: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

Oxygen Plasma ResultsOxygen Plasma ResultsContaminants are Contaminants are removed rapidly.removed rapidly.Concerns:Concerns: Top graph indicates Top graph indicates

increase in thickness increase in thickness over time… over time… oxidationoxidation

Bottom graph confirms Bottom graph confirms growing layer is NOT growing layer is NOT hydrocarbons. There is hydrocarbons. There is no XPS carbon peak.no XPS carbon peak.

Results of O2 Plasma Exposure

-12

-10

-8

-6

-4

-2

0

2

0 2 4 6 8 10 12 14 16 18

Minutes In Plasma

Cha

nge

in th

ickn

ess

(Å)

Page 11: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

UV Lamp TheoryUV Lamp Theory

High energy photons High energy photons break up hydrocarbon break up hydrocarbon bonds. Volatile fragments bonds. Volatile fragments leave the surface.leave the surface.UV produces oxygen UV produces oxygen radicals which react with radicals which react with oxygen gas to form oxygen gas to form ozone. The reactive ozone. The reactive ozone oxidizes ozone oxidizes contaminants and they contaminants and they evaporate.evaporate.

Page 12: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

UV ResultsUV Results4.5 Å DADMAC layer 4.5 Å DADMAC layer eliminated rapidly, eliminated rapidly, followed by slow followed by slow oxidation.oxidation.XPS shows no carbon XPS shows no carbon peak.peak.Concern: silicon Concern: silicon doesn’t appear to doesn’t appear to oxidize, but mirror oxidize, but mirror coatings such as U coatings such as U and Ni do.and Ni do.

UV Lamp

-8-7-6-5-4-3-2-1012

0 5 10 15 20 25

Time Under UV Lamp (s)

Cha

nge

in T

hick

ness

)

Page 13: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

OpticleanOpticlean® + ® + Plasma Plasma

Very effective: Removes both Very effective: Removes both large and small particles.large and small particles.Drawback: Procedure is long and Drawback: Procedure is long and specialized equipment required.specialized equipment required.

Page 14: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

Acknowledgements Acknowledgements Ross RobinsonRoss RobinsonLuke BissellLuke BissellRichard SandbergRichard SandbergMike NeweyMike NeweyDr. David D. AllredDr. David D. Allred

Page 15: REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS

ConclusionsConclusions1.1. For rigorous cleaning, Opticlean® + For rigorous cleaning, Opticlean® +

Plasma is most effectivePlasma is most effective2.2. UV Lamp shows potential for ease UV Lamp shows potential for ease

and quickness, but heavy oxidation and quickness, but heavy oxidation can ruin surfacescan ruin surfaces

3.3. Further Study: Which surfaces will Further Study: Which surfaces will oxidize (from UV) and how much?oxidize (from UV) and how much?