Upload
others
View
3
Download
0
Embed Size (px)
Citation preview
TM
Freescale Semiconductor Confidential and Proprietary Information. Freescale™ and the Freescale logo are trademarksof Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006.
Qualification Results- PCN14723
1
TMFreescale Semiconductor Confidential and Proprietary Information. Freescale™ and the Freescale logo are trademarksof Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006.
Pg. 2
Products Covered in this Notification:
Qualification Results for the FAB Site Transfer
From Freescale Sendai FabTo Freescale Chandler Fab
For HC908QVY4/Nitron LoftFSL-CHD- Fab/Mask M78Z
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
Technology:
Package: Design Engr: QUARTZ Tracking #: 203720
Fab / Assembly /
Final Test Sites: Product Engr: (Signature/Date shown below may be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-12-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-12-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT A
ME005HWK00
CTNALF1050A
LOT B LOT C CAB Approval
Signature & Date: 10010077M
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document
otherwise with justification)
TEST @ RH pass Generic Data:
Q202067, Nitron QC16: 0/693
Q203721, Nitron Classic: 0/693
Q204137, Nitron QB8: 0/77
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Generic Data:
Q202067, Nitron QC16: 0/231
Q203721, Nitron Classic: 0/231
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @
MSL3, 260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Generic Data:
Q202067, Nitron QC16: 0/231
Q203721, Nitron Classic: 0/231
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
TEST @ H 77 0 0 pass Generic Data:
Q202067, Nitron QC16: 0/231, WP: 0/5
Q203721, Nitron Classic: 0/231, WP: 0/5
Q204137, Nitron QB8: 0/77, WP: 0/5
PC + PTC
JESD22-
A105
Preconditioning plus Power Temperature
Cycle (PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated
power > 1 Watt and Delta-Tj > 40C or for devices
designed to drive inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated
power > 1 Watt and Delta-Tj > 40C or for devices
designed to drive inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 0 0 pass Generic Data:
Q203721, Nitron Classic, 0/77
All surface mount devices prior to THB, HAST, AC, UHST, TC,
PC+PTC and as required per test conditions.
Jim Carlquist - RMSD80
Sun Susan-R66089
M78Z
0
68HC908QVY4/68HC908QVT4
"Nitron LOFT"
Ziep Tran - RSJP50
Tammie Gause - RA7914/Nancy Long - B07252
U050FXXD /85%UDRSST
2003 /SOIC 16W
FSL-CHD-FAB/FSL-TJN-FM /KESC-TJN
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
2.5330 x 2.3350
Commercial/Industrial Tier Qual Results
"Varies"
"Varies"
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
Qualification of 85% UDR SST Nitron LOFT 68HC908QVY4/68HC908QVT4 in CHD
FORMPPAP004XLS 1 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life (HTOL):
Ta = 125°C for 168hrs
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 1 77 LOTA:0/77 Generic data:
Q202119, GZ60: 0/231@150C, 6V, 408Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Comm/Ind: 1yr lifetime
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic data:
Q202119, GZ60: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test
R, H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Q202119, GZ60: 0/231@10k WE at 125C + DRB
150C for 1008Hrs
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to
test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A
drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
DIM: Not Required
BOM: Done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages
e.g. PBGA, Chip Scale, Micro Lead Frame (but
NOT Flip Chip).
Two reflow cycles at MSL reflow temperature
before shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted packages only; NOT for Flip
Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each
of 5 parts)
0 0
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
TDDB
Time Dependent Dielectric Breakdown
(TDDB)
The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
FORMPPAP004XLS 2 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics
(TEST):
For AEC, test software shall meet requirements
of AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all qualification
units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage
level
1 12 LOTA:
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/150//200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage
level
1 12 LOTA:
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750/1000 Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
0 0
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-
004 requirements for AEC.
Ta= 125oC, 100mA
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 1 6 LOTA: 0/6
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 5 1 5 Cpmpleted
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and part
families per AEC Q003.
GL (for
information
only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate Leakage
(GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest;
recovered units are GL failures.
TEST @ R 6 0 0
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per
customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1 0 0
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number CAB Date
202119/203338 M29Z HC908GZ60 85% UDRSST FSL-CHD-FAB 22.06932484 10181326M203720 M78Z Nitron Loft 85% UDRSST FSL-CHD-FAB 5.914555 10010077M
Quartz# Mask Set Product-Qual Description/Part Number (s) Die Area(mm2) Assembly Site Pkg
Description/Code Mold Description EPOXY Description Wire Description
202065 M80Z HC908QC16 9.61625124 FSL-TJN-FM SOIC 16 W/2003 SUMITOMO G600 ABLEBOND 8290 25 um Au
203722 M05Z HC908QY4(NITRON) 7.3136949 FSL-TJN-FM SOIC 16 W/2003 SUMITOMO G600 ABLEBOND 8290 25 um Au
206298 M81Z HC908QB8_AUTO 7.2336 FSL-TJN-FM SOIC 16 W/2003 SUMITOMO G600 ABLEBOND 8290 25 um Au
Date Author
25-Aug-09 T. Gause
5 Nov. 2009 T. Gause
5 May, 2011 Nancy Long
Rev 1.0 Updated qual plan to reflect Assy Site Change as requested by Brian Drummond. Removed CDM that was never performed previously.
Rev 2.0 Add Qual Result
16 SOIC Pkg Qual Vehicles
Revision
Rev O Generated Plan
Comments
Die Qual Generic Data
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
General Notes:
1 -Nitron Loft Wafer tech code U050FXXD
2 - Nitron Loft BOM: SUMITOMO G600 Mold Compound, ABLEBOND 8290 Die Attach Epoxy, 25um Gold Wire
FORMPPAP004XLS 3 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
Technology:
Package: Design Engr: QUARTZ Tracking #: NA
Fab / Assembly /
Final Test Sites: Product Engr: (Signature/Date shown below may be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-12-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-12-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT A
ME005HWL00
CTNAFT1050A
LOT B LOT C CAB Approval
Signature & Date: 10010077M
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document
otherwise with justification)
TEST @ RH pass Generic Data:
Q202067, Nitron QC16: 0/693
Q203721, Nitron Classic: 0/693
Q204137, Nitron QB8: 0/77
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Generic Data:
Q202067, Nitron QC16: 0/231
Q203721, Nitron Classic: 0/231
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @
MSL3, 260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Generic Data:
Q202067, Nitron QC16: 0/231
Q203721, Nitron Classic: 0/231
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
For AEC only: WBP after TC on 5 devices from
1 lot; 2 bonds per corner and one mid-bond per
side on each device. Record which pins were
used.
TEST @ H
For AEC: WBP =/> 3
grams
77 0 0 pass Generic Data:
Q202067, Nitron QC16: 0/231, WP: 0/5
Q203721, Nitron Classic: 0/231, WP: 0/5
Q204137, Nitron QB8: 0/77, WP: 0/5
PC + PTC
JESD22-
A105
Preconditioning plus Power Temperature
Cycle (PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated
power > 1 Watt and Delta-Tj > 40C or for devices
designed to drive inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated
power > 1 Watt and Delta-Tj > 40C or for devices
designed to drive inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 0 0 pass Q203721, Nitron Classic: 0/77
U050FXXD /85%UDRSST
6117 /TSSOP 16 4.4*5*1.0P0.65 Jim Carlquist - RMSD80
FSL-CHD-FAB/FSL-TJN-FM/KESC-TJN Sun Susan-R66089
Commercial/Industrial Tier Qual Results
Qualification of 85% UDR SST Nitron LOFT 68HC908QVY4/68HC908QVT4 in CHD68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
M78Z
0 Ziep Tran - RSJP50/Shong Lee Ming-B21406
2.5330 x 2.3350
Tammie Gause - RA7914/Nancy Long - B07252
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC,
PC+PTC and as required per test conditions.
FORMPPAP004XLS 4 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life (HTOL):
Ta = 150°C for 168hrs (AEC MC Rd Pt.)
Comm/Ind: 1yr lifetime
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic data:
Q202119, GZ60: 0/231@150C, 6V, 408Hrs
Q203720, Nitron Loft: 0/77@125C, 6V, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Comm/Ind: 1yr lifetime
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic data:
Q202119, GZ60: 0/2400
Q203338, GZ60: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test
R, H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Q202119, GZ60: 0/231@10k WE at 125C + DRB
150C for 1008Hrs
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
0 0 pass Generic Data:
Nitron SOG TSSOP16 Auto Qual: 0/5, Cpk>1.67
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
0 0 pass Generic Data:
Nitron SOG TSSOP16 Auto Qual: 0/5, Cpk>1.67
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to
test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A
drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
DIM: Not Required
BOM: done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages
e.g. PBGA, Chip Scale, Micro Lead Frame (but
NOT Flip Chip).
Two reflow cycles at MSL reflow temperature
before shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted packages only; NOT for Flip
Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each
of 5 parts)
0 0
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
TDDB
Time Dependent Dielectric Breakdown
(TDDB)
The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
FORMPPAP004XLS 5 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics
(TEST):
For AEC, test software shall meet requirements
of AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all qualification
units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage
level
0 0 pass Generic data
Q203720, Nitron Loft(16W SOIC):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage
level
0 0 pass Generic data
Q203720, Nitron Loft(16W SOIC):
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
0 0
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-
004 requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 0 0 pass Generic data
Q203720, Nitron Loft(16W SOIC):0/6@100mA
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 5 0 0 completed Done on Nitron Loft SOIC16 W
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and part
families per AEC Q003.
GL (for
information
only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate Leakage
(GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest;
recovered units are GL failures.
TEST @ R 6 0 0
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per
customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1 0 0
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number CAB Date
202119/203338 M29Z HC908GZ60 85% UDRSST FSL-CHD-FAB 22.06932484 10181326M203720 M78Z Nitron Loft 85% UDRSST FSL-CHD-FAB 5.914555 10010077M
Quartz# Mask Set Product-Qual Description/Part Number (s) Die Area(mm2) Assembly Site Pkg
Description/Code Mold Description EPOXY Description Wire Description
202067 M80Z HC908QC16 9.61625124 FSL-TJN-FM TSSOP 16/6117 G700K ABLEBOND 8290 25 um Au203721 M05Z HC908QY4(Nitron Classic) 7.3136949 FSL-TJN-FM TSSOP 16/6117 G700K ABLEBOND 8290 25 um Au204137 M81Z HC908QB8_AUTO 7.2336 FSL-TJN-FM TSSOP 16/6117 G700K ABLEBOND 8290 25 um Au
204140 M62Z Nitron ROM 4.420504 FSL-TJN-FM TSSOP 16/6117 G700K ABLEBOND 8290 25 um Au
Date Author
25-Aug-09 T. Gause
25-Aug-09 T. Gause
5-May-11 Nancy Long
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
General Notes:
1 -Nitron Loft Wafer tech code U050FXXD
2 - Nitron Loft BOM: SUMITOMO G700K Mold Compound, ABLEBOND 8290 Die Attach Epoxy, 25um Gold Wire
Rev O Generated Plan
Rev 1.0 Reviewed qual plan with H.P. Wang - Reliability Engr, PE and PM team.
Die Qual Generic Data
16 TSSOP Pkg Qual Vehicles
Revision Comments
Rev2.0 Add qual Result
FORMPPAP004XLS 6 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
Technology:
Package: Design Engr: QUARTZ Tracking #: 204318 and 212274
Fab / Assembly /
Final Test Sites: Product Engr: (Signature/Date shown below may be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Lee Ming Shong
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date: Nancy Long
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT A
8ENJ05206800
1052 LOT B LOT C CAB Approval
Signature & Date: 10010077M
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document
otherwise with justification)
TEST @ RH 77 0 0 Not required for PDIP Packages
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 1 77 LOTA: 0/77 Generic data:
Q212342, QY4A(Nitron SOG): 0/77
Q203724, QY4(Nitron): 0/77
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @
MSL3, 260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 1 77 LOTA: 0/77 Generic data:
Q212342, QY4A(Nitron SOG): 0/77
Q203724, QY4(Nitron): 0/77
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
For AEC only: WBP after TC on 5 devices from
1 lot; 2 bonds per corner and one mid-bond per
side on each device. Record which pins were
used.
TEST @ H(C)
For AEC: WBP =/> 3
grams
77 1 77 LotA: 0/77, WP, 0/5, min>3g Generic data:
Q212342, QY4A(Nitron SOG): 0/77
Q203724, QY4(Nitron): 0/77
PC + PTC
JESD22-
A105
Preconditioning plus Power Temperature
Cycle (PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated
power > 1 Watt and Delta-Tj > 40C or for devices
designed to drive inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated
power > 1 Watt and Delta-Tj > 40C or for devices
designed to drive inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 1 77 LOTA: 0/77
Qualification of 85% UDR SST Nitron LOFT 68HC908QVY4/68HC908QVT4 in CHD68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
U050FXXD /85%UDRSST
Pkg Code 3/8 PDIP Jim Carlquist - RMSD80
Commercial/Industrial Tier Qual Results
2.5330 x 2.3350
Tammie Gause - RA7914/Nancy Long - B07252
FSL-CHD-FAB/NFME /KESC-TJN Sun Susan-R66089
M78Z
0 Ziep Tran - RSJP50/Shong Lee Ming-B21406
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
FORMPPAP004XLS 7 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life (HTOL):
Ta = 125°C for 168hrs (AEC MC Rd Pt.)
Comm/Ind: 1yr lifetime
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic data:
Q202119, GZ60: 0/231@150C, 6V, 408Hrs
Q203720, Nitron Loft: 0/77@125C, 6V, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Comm/Ind: 1yr lifetime
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic data:
Q202119, GZ60: 0/2400
Q203338, GZ60: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test
R, H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Q202119, GZ60: 0/231@10k WE at 125C + DRB
150C for 1008Hrs
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to
test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A
drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
DIM: Not Required
BOM: Done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages
e.g. PBGA, Chip Scale, Micro Lead Frame (but
NOT Flip Chip).
Two reflow cycles at MSL reflow temperature
before shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted packages only; NOT for Flip
Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each
of 5 parts)
0 0
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
TDDB
Time Dependent Dielectric Breakdown
(TDDB)
The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 8 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics
(TEST):
For AEC, test software shall meet requirements
of AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all qualification
units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage
level
0 0 pass Generic data
Q203720, Nitron Loft(16W SOIC):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage
level
0 0 pass Generic data
Q203720, Nitron Loft(16W SOIC):
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
1 9 LOTA:
0/3@250V
0/3@500V
0/3@750V
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-
004 requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 0 0 pass Generic data
Q203720, Nitron Loft(16W SOIC):0/6@100mA
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 5 0 0 completed Done on Nitron Loft SOIC16 W: 0/30
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and part
families per AEC Q003.
GL (for
information
only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate Leakage
(GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest;
recovered units are GL failures.
TEST @ R 6 0 0
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per
customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number CAB Date
202119/203338 M29Z HC908GZ60 85% UDRSST FSL-CHD-FAB 22.06932484 10181326M203720 M78Z Nitron Loft 85% UDRSST FSL-CHD-FAB 5.914555 10010077M
8 PDIP Pkg Qual Vehicles
Quartz# Mask Set Product-Qual Description/Part Number (s) Die Area
(mm2)
Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
212342 M82Z 908QY4A(Nitron SOG) 5 NFME PDIP 8/0003 MC_HITACHI_CEL1620HF9DA_YIZTECH_9144 25um Au212274 M78Z 908QVY4(Nitron Loft) 5.90189 NFME PDIP 8/0003 MC_HITACHI_CEL1620HF9DA_YIZTECH_9144 25um Au203724 M05Z 908QY4(Nitron) 7.3136949 NFME PDIP 8/0003 MC_HITACHI_CEL1620HF9DA_YIZTECH_9144 25um Au
Date Author
25-Aug-09 T. Gause
1-Apr-11 Nancy Long
5-May-11 Nancy Long
Rev O Generated Plan
Rev 1.0 Update Assembly site from ATP to NFME, update BOM, add 1 lot package qual to make total 3 lots qual for 8PDIP
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
General Notes:
1 -Nitron Loft Wafer tech code U050FXXD
2 - Nitron Loft BOM: HITACHI_CEL1620HF9 Mold Compound, YIZTECH_9144 Die Attach Epoxy, 25um Gold Wire, K11060D025
Die Qual Generic Data
Revision Comments
Rev 2.0 Add Qual Result
FORMPPAP004XLS 9 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
Technology:
Package: Design Engr: QUARTZ Tracking #: NA
Fab / Assembly /
Final Test Sites: Product Engr: (Signature/Date shown below may be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Lee Ming Shong
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date: Nancy Long
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT A
8ENJ05206K00
LOT B LOT C CAB Approval
Signature & Date: 10010077M
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document
otherwise with justification)
TEST @ RH 77 0 0 pass Generic Data:
Q203725, Nitron: 0/231
Q205706, Nitron SOG: 0/462
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Generic Data:
Q203725, Nitron: 0/77
Q205706, Nitron SOG: 0/154
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @
MSL3, 260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Generic Data:
Q203725, Nitron: 0/77
Q205706, Nitron SOG: 0/154
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
For AEC only: WBP after TC on 5 devices from
1 lot; 2 bonds per corner and one mid-bond per
side on each device. Record which pins were
used.
TEST @ H
For AEC: WBP =/> 3
grams
77 0 0 pass Generic Data:
Q203725, Nitron: 0/77
Q205706, Nitron SOG: 0/154
PC + PTC
JESD22-
A105
Preconditioning plus Power Temperature
Cycle (PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated
power > 1 Watt and Delta-Tj > 40C or for devices
designed to drive inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated
power > 1 Watt and Delta-Tj > 40C or for devices
designed to drive inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
150°C for 168hrs, 504hrs and 1000 hrs and
175oC for 168hrs and 500 hrs
Timed RO = 96hrs. MAX
TEST @ RH(C) 77+3 0 0 pass Generic Data:
Q203725, Nitron: 0/77
Q205706, Nitron SOG: 0/154
Qualification of 85% UDR SST Nitron LOFT 68HC908QVY4/68HC908QVT4 in CHD68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
U050FXXD /85%UDRSST
6003 /SOEIAJ 8 T2 MFP Jim Carlquist - RMSD80
Commercial/Industrial Tier Qual Results
2.5330 x 2.3350
Tammie Gause - RA7914/Nancy Long - B07252
FSL-CHD-FAB/NFME /KESC-TJN Sun Susan-R66089
M78Z
0 Ziep Tran - RSJP50/Shong Lee Ming-B21406
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
FORMPPAP004XLS 10 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life (HTOL):
Ta = 150°C for 168hrs (AEC MC Rd Pt.)
Comm/Ind: 1yr lifetime
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic data:
Q202119, GZ60: 0/231@150C, 6V, 408Hrs
Q203720, Nitron Loft: 0/77@125C, 6V, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Comm/Ind: 1yr lifetime
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic data:
Q202119, GZ60: 0/2400
Q203338, GZ60: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test
R, H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Q202119, GZ60: 0/231@10k WE at 125C + DRB
150C for 1008Hrs
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
WBP MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to
test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A
drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
DIM: Not Required
BOM: done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages
e.g. PBGA, Chip Scale, Micro Lead Frame (but
NOT Flip Chip).
Two reflow cycles at MSL reflow temperature
before shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted packages only; NOT for Flip
Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each
of 5 parts)
0 0
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
TDDB
Time Dependent Dielectric Breakdown
(TDDB)
The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and internal
criteria should be available to the customer upon
request for new technologies.
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
FORMPPAP004XLS 11 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908QVY4/68HC908QVT4
"Nitron LOFT"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics
(TEST):
For AEC, test software shall meet requirements
of AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit value.
0 Fails All All All completed This action refers to Final Testing of all qualification
units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage
level
0 0 pass Generic data
Q203720, Nitron Loft(16W SOIC):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage
level
0 0 pass Generic data
Q203720, Nitron Loft(16W SOIC):
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
0 0
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-
004 requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 0 0 pass Generic data
Q203720, Nitron Loft(16W SOIC):0/6@100mA
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 5 0 0 completed Done with Nitron Loft 16W SOIC:
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and part
families per AEC Q003.
GL (for
information
only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate Leakage
(GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest;
recovered units are GL failures.
TEST @ R 6 0 0
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per
customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1 0 0
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number CAB Date
202119/203338 M29Z HC908GZ60 85% UDRSST FSL-CHD-FAB 22.06932484 10181326M203720 M78Z Nitron Loft 85% UDRSST FSL-CHD-FAB 5.914555 10010077M
Quartz# Mask Set Product-Qual Description/Part Number (s) Die Area
(mm2)
Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
203725 M05Z 68HC908QY4 (Nitron) 7.314573 NFME SOEIAJ 8/6003 HITACHI_CEL9210HFVLABLESTIK_ABL8352L 25um Au205706 M82Z 68HC908QY4A (Nitron SOG) 5.516645 NFME SOEIAJ 8/6003 HITACHI_CEL9210HFVLABLESTIK_ABL8352L 25um Au
Revision Date Comments Author
Rev O 25-Aug-09 Generated Plan T. Gause
Rev A 5-May-11 Add Qual Result Nancy Long
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
General Notes:
1 -Nitron Loft Wafer tech code U050FXXD
2 - Nitron Loft BOM: HITACHI_CEL9210HFVL Mold Compound, ABLESTIK_ABL8352L Die Attach Epoxy, 25um Gold Wire
Die Qual Generic Data
FORMPPAP004XLS 12 of 12 Freescale Rev T
(Nitron Loft, CHD M78Z) Electrical Distribution Per AEC Q100 Rev G, ED Appendix Rev B; any key datasheet parameter with Cpk < 1.67 will require justification and FSL NPI Quality approval.
Hot
Parameter Name in Datasheet Units Lower Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std CpkLVI_trip V 2.4 2.7 2.5421778 0.0354197 1.6952564 2.5377333 0.0286933 1.88507 2.5341053 0.0261904 1.7068023 2.5411613 0.0283209 1.8695114 PASS PASS
LVI_recover V 2.5 2.8 2.694 0.0362065 1.6768907 2.614 0.0289589 1.7812202 2.6852632 0.0277768 1.6758843 2.6170968 0.029574 1.819815 PASS PASSRIDD_3v mA 0 3.2 2.2314091 0.0354535 7.2262896 2.240631 0.0350298 9.1290839 2.2313351 0.0297604 8.6094934 2.2904065 0.0302815 7.8110758 PASS PASSRIDD_5v mA 0 7 4.6015409 0.076913 3.8938309 4.8201759 0.0808386 8.9883766 4.6128162 0.0657227 4.4996293 4.8820097 0.0712179 2.8924851 PASS PASSWIDD_3v mA 0 1 0.7497838 0.014639 5.6974615 0.7647409 0.0136541 5.743306 0.7505524 0.010793 7.7040052 0.779742 0.010649 6.8944778 PASS PASSWIDD_5v mA 0 1.5 1.2570023 0.0207771 3.8984832 1.3291759 0.0220928 6.3493494 1.2629432 0.0174976 4.5159831 1.3449516 0.0190317 2.7156202 PASS PASSSIDD_3v uA -2 130 94.746002 2.0113143 5.8426137 95.78949 1.9624262 5.8109208 93.771481 1.4270104 8.4625683 96.987777 1.4318388 6.986872 PASS PASSSIDD_5v uA -3 155 111.29645 1.8709252 7.7864421 115.16326 2.015373 6.588812 110.80957 1.5180412 9.7033875 118.65365 1.4921449 8.1194853 PASS PASS
VOH_high_drive_3v V 1.9 2.7 1.928645 0.0157653 2.39 2.1001594 0.0239022 2.7913609 1.9294026 0.011465 3.4715115 2.0904548 0.0283841 2.4917853 PASS PASSVOH_high_drive_5v V 4.7 5.5 5.0743378 0.0122249 6.1169694 5.0815969 0.0192454 4.0113042 5.0848947 0.0114876 6.8158815 5.0600355 0.034437 2.0330419 PASS PASSvoh_max_load_3v V 1.7 2.7 2.356305 0.005304 46.901708 2.4771844 0.0097195 26.653907 2.3640342 0.0042582 59.02642 2.4567968 0.0134748 18.721351 PASS PASSvoh_max_load_5v V 4.2 5.5 5.1253222 0.003872 83.96287 5.1276719 0.0063652 51.19889 5.1219789 0.0061156 52.978457 5.1276129 0.0045596 71.469414 PASS PASS
Untrim_3v V 2.4 4 3.01 0.00468 10.64 2.9863307 0.0522689 4.2 3 0.00568 9.87 2.9733071 0.0502689 4.38 PASS PASSUntrim_5v V 2.4 4 3.012 0.045 9.512 3.01 0.043 4.95 3.01 0.043 11.2 3 0.0425 5.01 PASS PASS
vol_max_load_3v mV N/A 1000 313.36 7.14 31.81 331.878 7.088 35.18 305.46 5.11 45.09 330.568 6.988 39.078 PASS PASSvol_max_load_5v mV N/A 1500 423.33 7.33 48.58 440.31 14.5 38.27 410.22 6.65 54.06 425.69 13.099 41.27 PASS PASS
Room
Parameter Name in Datasheet Units Low Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std CpkLVI trip V 2 4 2 7 2 5413495 0 0367354 1 7395792 2 5370217 0 0335105 1 7711651 2 5406337 0 0364411 1 7577523 2 5392581 0 0333036 1 6888534 PASS PASS
SND L85S Post HTOL
125C
SND L85S Post HTOL25C
CHD M78Z qual lot1 Post HTOL 25C 25C
Report Date: Apr/28/2011Report Revision: 0
125C
SND L85S Pre HTOL25C
CHD M78Z qual lot1 Pre HTOL CHD M78Z qual lot1 Post HTOL
125C 125C
SND L85S Pre HTOL
CHD M78Z qual lot1 Pre HTOL
Comment
Comment
Pre CHD1 mean+-1 SND
sigma or +-10%
Post CHD1 mean+-1 SND
sigma or +-10%
Pre CHD1 mean+-1 SND
sigma or +-10%
Post CHD1 mean+-1 SND
sigma or +-10%
LVI_trip V 2.4 2.7 2.5413495 0.0367354 1.7395792 2.5370217 0.0335105 1.7711651 2.5406337 0.0364411 1.7577523 2.5392581 0.0333036 1.6888534 PASS PASSLVI_recover V 2.5 2.8 2.6951882 0.0378494 1.702306 2.6132609 0.0336025 1.7235349 2.6936634 0.036762 1.6864189 2.6174194 0.0317246 1.7337353 PASS PASS
RIDD_3v mA 0 3.2 2.0562502 0.2983816 2.464 2.0259761 0.2582407 1.8515413 2.069333 0.3243655 1.8429113 1.9511806 0.3318123 1.8753627 PASS PASSRIDD_5v mA 0 7 4.5509952 0.0824677 2.8253685 4.4995 0.0825578 10.095954 4.51842 0.0867643 2.8106028 4.5233065 0.0771885 4.2177831 PASS PASSWIDD_3v mA 0 1 0.7283336 0.0142615 6.349662 0.738716 0.0143487 6.0698541 0.727294 0.0137783 6.5974621 0.7447799 0.0127936 6.6496757 PASS PASSWIDD_5v mA 0 1.5 1.2448391 0.0225798 3.7668047 1.2551174 0.0225629 7.3111546 1.241056 0.0227919 3.7870821 1.2622484 0.0207552 3.8183509 PASS PASSSIDD_3v uA -2 130 86.844754 2.0359572 6.90179 89.883039 1.9135316 6.9882934 86.599869 1.8777232 7.5268691 91.461419 1.6795624 7.6485363 PASS PASSSIDD_5v uA -3 155 105.90892 2.1026866 7.4652247 109.47136 1.80575 8.4043822 105.81291 1.8469526 8.516207 110.67355 1.6669602 8.8637285 PASS PASS
VOH_high_drive_3v V 1.9 2.7 2.0163035 0.0242363 3.2499908 2.1825281 0.0273207 3.4470556 2.0202059 0.0156663 5.3236424 2.16415 0.028828 3.0543246 PASS PASSVOH_high_drive_5v V 4.7 5.5 5.1213543 0.0050798 14.524994 5.0109078 0.0354222 2.9257338 5.1200892 0.0033353 21.996225 5.0009516 0.0371981 2.6968375 PASS PASSvoh_max_load_3v V 1.7 2.7 2.3716285 0.0101208 26.072745 2.5048016 0.0115042 23.319075 2.3782275 0.006192 42.970924 2.498129 0.013034 20.411525 PASS PASSvoh_max_load_5v V 4.2 5.5 5.1219285 0.0041211 74.568873 5.1110781 0.0098699 37.523976 5.12055 0.0029824 102.8864 5.1168387 0.0130459 28.536056 PASS PASS
Untrim_3v V 2.4 4 3 0.00467 10.89 3.012 0.0480731 3.7478037 3 0.00487 9.7 3.02 0.0520309 3.1478037 PASS PASSUntrim_5v V 2.4 4 3.01 0.0054 9.36 3.087 0.051 3.4 3.007 0.005 9.6 2.99 0.0508 3.67 PASS PASS
vol_max_load_3v mV N/A 1000 245.3 6 41.56 240.014 6.07634 42.38 245.33 6.08 41.2 239.96014 6.074 42.18 PASS PASSvol_max_load_5v mV N/A 1500 343.9 9.63 39.71 342.988 8.06647 48.36 343.74 9.11 4.13 341.53 7.86647 52.06 PASS PASS
Cold
Parameter Name in DatasheetUnit
s Low Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std CpkLVI_trip V 2.4 2.7 2.5244259 0.0475675 1.6903511 2.5287222 0.0380658 1.6998389 2.5321818 0.040364 1.6858735 2.5259355 0.0373264 1.6944349 PASS PASS
LVI_recover V 2.5 2.8 2.6788889 0.0465134 1.6791534 2.6063889 0.0379588 1.6893425 2.6851515 0.040667 1.6701374 2.6041935 0.0376629 1.6722159 PASS PASSRIDD_3v mA 0 3.2 2.0216519 0.0665299 3.6492289 2.1390111 0.0407399 8.6810037 2.0407255 0.0468156 5.0501291 2.1230667 0.0468077 8.319815 PASS PASSRIDD_5v mA 0 7 4.3602481 0.1392478 2.1299009 4.5554972 0.0851022 9.5747778 4.3493878 0.1090787 2.7521788 4.5261 0.096946 3.3486002 PASS PASSWIDD_3v mA 0 1 0.6878423 0.0241876 4.3018947 0.7255087 0.0151998 6.0196125 0.6941405 0.0162398 6.2779895 0.7205523 0.0163874 5.6842002 PASS PASSWIDD_5v mA 0 1.5 1.1985667 0.0507755 1.9788643 1.2582444 0.0237397 3.394529 1.1965806 0.0277467 3.6451138 1.25208 0.0252628 3.2712108 PASS PASSSIDD_3v uA -2 130 77.766524 2.6881122 6.4770952 84.863981 1.955282 7.6947162 79.884637 2.0051705 8.3310229 84.14231 1.9424422 7.8694216 PASS PASSSIDD_5v uA -3 155 99.10695 2.6119517 7.1329866 106.70846 1.8085326 8.9006847 100.62339 1.8867114 9.6069473 106.15048 1.7978596 9.0569776 PASS PASS
VOH_high_drive_3v V 1.9 2.7 2.2964907 0.0190742 6.9289088 2.2604488 0.0249937 4.8071945 2.276196 0.0145464 8.6206186 2.2681258 0.0317829 3.8608412 PASS PASSVOH_high_drive_5v V 4.7 5.5 5.1242019 0.0055716 13.413352 5.126707 0.0061888 12.210698 5.1212614 0.0026575 27.752902 5.1279032 0.0047294 16.062955 PASS PASSvoh_max_load_3v V 1.7 2.7 2.5452259 0.0086857 32.437329 2.5319209 0.01029 26.949054 2.5388129 0.0057283 48.810959 2.5338774 0.0147387 18.859084 PASS PASSvoh_max_load_5v V 4.2 5.5 5.12415 0.0055371 55.633426 5.1291651 0.0073863 41.93168 5.1212762 0.0026812 114.53375 5.1278355 0.0047158 65.584059 PASS PASS
Untrim_3v V 2.4 4 2.96 0.0399 5.72 2.998 0.065 3.134 2.99 0.0354 6.02 2.987 0.045 5.234 PASS PASSUntrim_5v V 2.4 4 2.99 0.06573 3.21 3.01 0.06574 3.21 3.01 0.062 3.79 3 0.0677 3.01 PASS PASS
vol_max_load_3v mV N/A 1000 205.59 3.68 71 225.136 5.016 53.167 218.79 11.21 23.09 220.386 5.01 53.01 PASS PASSvol_max_load_5v mV N/A 1500 295.13 5.02 79.29 315.62 7.1599 523.86 313.22 17.26 22.79 314.78 6.1599 528.37 PASS PASS
SND L85S Post HTOL -40C -40C -40C -40C
SND L85S Pre HTOLCHD M78Z qual lot1 Pre HTOL CHD M78Z qual lot1 Post HTOL
Comment
Pre CHD1 mean+-1 SND
sigma or +-10%
Post CHD1 mean+-1 SND
sigma or +-10%
Qualification Results for the FAB Site Transfer
From Freescale Sendai FabTo Freescale Chandler Fab
For HC908GP32FSL-CHD- Fab/Mask M45Z
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
Technology:
Package: Design Engr: QUARTZ Tracking #: 200122
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below may be
electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-12-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-12-2011
Part Operating
Temp. Grade: Grade 3 - 40°C to + 85 °C Trace/DateCode:
LOT A
8EME005DU000
CTZA1045A
LOT B LOT C CAB Approval
Signature & Date:
09523616M
May-20-2011
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document otherwise
with justification)
TEST @ RH 8EME005DU000: 0/77 Generic data
Q202840, 705C9A: 0/693
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5.5V
Timed RO of 48hrs. MAX
TEST @ RH 77 1 77 8EME005DU000: 0/77 Generic data
Q202840, 705C9A: 0/231
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @ MSL3,
260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 1 77 8EME005DU000: 0/77 Generic data
Q202840, 705C9A: 0/231
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
TEST @ H 77 1 77 8EME005DU000: 0/80, WP: 0/5, Min>3g Generic data
Q202840, 705C9A: 0/231
PC + PTC
JESD22-
A105
Preconditioning plus Power Temperature Cycle
(PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and Delta-Tj
> 40C or for devices designed to drive
inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and Delta-Tj
> 40C or for devices designed to drive
inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
175oC for 504 hrs
TEST @ RH 77 1 77 8EME005DU000: 0/77
Commercial/Industrial Tier Qual Results
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC and as required
per test conditions.
Qualification of 85% UDR SST 68HC908GP32 in CHD68HC908GP32
"GP32"
U050FXXD /85%UDRSST
Pkg Code 6016/QFP 44 10*10*2.0P0.8
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM
Jim Carlquist - RMSD80
"Varies"
"Varies"
Ken Song - R65800
Ziep Tran - RSJP50
Tammie Gause - RA7914/Nancy Long - B07252
M45Z
0
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
3.6058 X 3.7024
HTSL 175oC for 504 hrs
Timed RO = 96hrs. MAX
FORMPPAP004XLS 1 of 9 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908GP32
"GP32"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life (HTOL):
10k Flash W/E Cycling (125oC) + HTOL @
Ta = 125°C for 168hrs
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 1 77 8EME005DU000: 0/77 Generic dada:
Q202119, GZ60 Auto
Qual(0M29Z):0/231@150C, 408Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic dada:
Q203338, GZ60 IMM Qual(0M29Z):0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Cycles Flash Endurance @ 125oC followed
by DRB @ 150oC for 1008hrs
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test R, H,
C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic dada:
Q202119, GZ60 Auto Qual(0M29Z):0/231
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005DU000: 0/5, Cpk>1.67 Performed by Assembly Site during qual lot
builds - PE to include this requirement in the
qual lot build ERF
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005DU000: 0/5, Cpk>1.67 Performed by Assembly Site during qual lot
builds - PE to include this requirement in the
qual lot build ERF
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage of
critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
DIM: Not Required
BOM: Done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages e.g.
PBGA, Chip Scale, Micro Lead Frame (but NOT Flip
Chip).
Two reflow cycles at MSL reflow temperature before
shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted packages only; NOT
for Flip Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each of
5 parts)
0 0
End Point Minimum Sample Total Units Results
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
FORMPPAP004XLS 2 of 9 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908GP32
"GP32"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):
For AEC, test software shall meet requirements of
AEC-Q100-007.
Testing performed to the limits of device specification
in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all
qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage
level
1 12 8EME005DU000:
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/150/200/400 (FYI) Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage
level
1 12 8EME005DU000:
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750/Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
1 9 8EME005DU000
0/3@250V
0/3@500V
0/3@750V(CP)
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-004
requirements for AEC.
Ta= 85oC, 100mA
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 1 6 8EME005DU000: 0/6
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 5 1 5 Completed
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or > 90%
for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and part families
per AEC Q003.
GL (for information
only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake (4hrs/125°C,
or 2hrs/150°C) and retest; recovered units are GL
failures.
TEST @ R 6 0 0
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per customer/Freescale
agreement)
<40dBuV
150KHz - 1GHz
1
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number CAB Date
202119/203338 M29Z HC908GZ60 85% UDRSST FSL-CHD-FAB 22.061809 10181326M
200122 M45Z HC908GP32 85% UDRSST FSL-CHD-FAB 13.35011392 09523616M
44 QFP Package Generic DataQuartz# Mask Set Product-Qual Description/Part Number (s) Die Area
(mm2)
Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
202840 M30Z HC705C9A 38.11 6016 QFP 44 10*10/6016 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
200122 M45Z HC908GP32 13.35 6016 QFP 44 10*10/6016 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
Date Author
4-Aug-09 T. Gause
27-Aug-09 T. Gause
11-Mar-10 Nancy L
28-May-10 NancyL
5-May-11 Nancy Long
Reviewed qual plan with Nancy Long - TJN Reliability, PM and PE team.
Rev 2.0
Rev 3.0 chg EDR to HTSL, EDR can reuse data from HC912DT128A(85%UDRSST, 0L05H)
Rev 4.0 Add Qual Result
General Notes:
1 -GP32 Wafer tech code U050FXXD
2 - GP32 BOM: HITACHI 9200HF10M Mold Compound, SUMITOMO CRM-1064MBL Die Attach Epoxy, 25um Gold Wire, K11013D012
Die Qual Generic data
Rev 1.0
Add CDM, control lot for ED, EDR, HTOL
Revision Comments
Rev O Generated Plan
FORMPPAP004XLS 3 of 9 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908GP32
"GP32"
"Varies"
"Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
Technology:
Package: Design Engr: QUARTZ Tracking #: 203179
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below may be
electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-12-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-12-2011
Part Operating
Temp. Grade: Grade 3 - 40°C to +85 °C Trace/DateCode:
LOT A
8EME005DTV00
CTZD1045A
LOT B LOT C CAB Approval
Signature & Date:
09523616M
May-20-2011
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document otherwise
with justification)
TEST @ RH 77 0 0 Not required for PDIP Packages
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5.5V
Timed RO of 48hrs. MAX
TEST @ RH 77 1 77 8EME005DTV00 : 0/77 Generic data;
Q202624, 705C8A; 0/154
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @ MSL3,
260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 1 77 8EME005DTV00 : 0/77 Generic data;
Q202624, 705C8A; 0/154
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
TEST @ H 77 1 77 8EME005DTV00 : 0/77, WP: 0/5, min>3g Generic data;
Q202624, 705C8A; 0/154
PC + PTC
JESD22-
A105
Preconditioning plus Power Temperature Cycle
(PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and Delta-Tj
> 40C or for devices designed to drive
inductive loads.
JESD22- Power Temperature Cycle (PTC): TEST @ RH 0 0 0 Only Required for AEC devices with
Commercial/Industrial Tier Qual Results
Qualification of 85% UDR SST 68HC908GP32 in CHD68HC908GP32
"GP32"
Name or "Varies"
PB or "Varies"
U050FXXD /85%UDRSST
Pkg Code 6013/PSDIP 42 Jim Carlquist - RMSD80
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM Ken Song - R65800
M45Z
0 Ziep Tran - RSJP50
3.6058 X 3.7024 Tammie Gause - RA7914/Nancy Long - B07252
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and Delta-Tj
> 40C or for devices designed to drive
inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
175oC for 168hrs and 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 1 80 175C, 504Hrs:
8EME005DTV00: 0/80
FORMPPAP004XLS 4 of 9 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908GP32
"GP32"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life (HTOL):
10k Flash W/E Cycling (125oC) + HTOL @
Ta = 125°C for 168hrs
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(0M29Z):0/231@150C, 408Hrs
Q200122, GP32(QFP44 package):
0/77@125C, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Comm/Ind: 1yr lifetime
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH(C) 800 0 0 pass Generic dada:
Q203338, GZ60 IMM Qual(0M29Z):0/2400
Samples without BI
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Cycles Flash Endurance @ 125oC followed
by DRB @ 150oC for 1008hrs
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test R, H,
C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic dada:
Q202119, GZ60 Auto Qual(0M29Z):0/231
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005DTV00 : 0/5, Cpk>1.67 Refer to pkg qual vehicles at the bottom of
the plan.
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005DTV00 : 0/5, Cpk>1.67 Refer to pkg qual vehicles at the bottom of
the plan.
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage of
critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
DIM: Not Required
BOM: done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages e.g.
PBGA, Chip Scale, Micro Lead Frame (but NOT Flip
Chip).
Two reflow cycles at MSL reflow temperature before
shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted packages only; NOT
for Flip Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each of
5 parts)
0 0
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 5 of 9 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908GP32
"GP32"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):
For AEC, test software shall meet requirements of
AEC-Q100-007.
Testing performed to the limits of device specification
in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all
qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage
level
0 0 pass Generic dada:
Q200122, GP32(44QFP):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/150/200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage
level
0 0 pass Generic dada:
Q200122, GP32(44QFP):
0/3@50
0/3@100
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
1 12 8EME005DTV00:
0/3@250V
0/3@500V
0/3@750V(CP)
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-004
requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 0 0 pass Generic dada:
Q200122, GP32(44QFP): 0/6
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 5 0 0 Completed Done on GP32 44 QFP
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or > 90%
for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and part families
per AEC Q003.
GL (for information
only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake (4hrs/125°C,
or 2hrs/150°C) and retest; recovered units are GL
failures.
TEST @ R 6 0 0
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
failures.
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per customer/Freescale
agreement)
<40dBuV
150KHz - 1GHz
1 0 0
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number
202119/203338 M29Z HC908GZ60 85% UDRSST FSL-CHD-FAB 22.061809 10181326M
200122 M45Z HC908GP32 85% UDRSST FSL-CHD-FAB 13.35011392 09523616M
Quartz# Mask Set Product-Qual Description/Part Number (s) Die Area
(mm2)
Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
203179 M45Z HC908GP32 13.35011392 TJN 42 PSDIP/6013 MC NITTO MP8000CH D/ATCH SMTM CRM-1033B 25um Au
202624 M24Z HC705C8A 23.79 TJN 42 PSDIP/6013 MC NITTO MP8000CH D/ATCH SMTM CRM-1033B 25um Au
Date Author
4-Aug-09 T. Gause
27-Aug-09 T. Gause
3 Nov. 2009 T. Gause
11 Mar, 2010 Nancy Long
18-Mar-11 Nancy Long
5-May-11 Nancy Long
General Notes:
1 -GP32 Wafer tech code U050FXXD
2 - GP32 BOM: MC NITTO MP8000CH Mold Compound, SMTM CRM-1033B Die Attach Epoxy, 25um Gold Wire
Die Qual Generic data
Revision Comments
Rev O Generated Plan
Rev 1.0 Reviewed qual plan with Nancy Long - TJN Reliability, PM and PE team.
Package Qual Generic data
Rev 2.0 Added 1-lot pkg qual requirements to replace the GR8 42 SDIP pkg qual that was being removed due to EOL which was approved by June Lewis.
Rev 3.0 Add CDM, HTSL
Rev 4.0 Remove generic data from MR32 56PSDIP for 705C8A and GP32 42PSDIP package, Add additional 1 lot package qual was added on 705C8A 42PSDIP package
Rev 5.0 Add Qual Result
FORMPPAP004XLS 6 of 9 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908GP32
"GP32"
"Varies"
"Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
Technology:
Package: Design Engr: QUARTZ Tracking #: 203182
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below may be
electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-12-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-12-2011
Part Operating
Temp. Grade: Grade 3 - 40°C to + 85 °C Trace/DateCode:
LOT A
8EME005DTZ00
CTQB1045A
LOT B LOT C CAB Approval
Signature & Date:
09523616M
May-20-2011
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document otherwise
with justification)
TEST @ RH 77 0 0 Not required for PDIP Packages
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5.5V
Timed RO of 48hrs. MAX
TEST @ RH 77 1 77 8EME005DTZ00: 0/77 Generic data;
Q202843, 705C9A: 0/231
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @ MSL3,
260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 1 77 8EME005DTZ00: 0/77 Generic data;
Q202843, 705C9A: 0/231
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
TEST @ H 77 1 77 8EME005DTZ00: 0/77, WP: 0/5, Min>3g Generic data;
Q202843, 705C9A: 0/231
PC + PTC
JESD22-
A105
Preconditioning plus Power Temperature Cycle
(PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and Delta-Tj
> 40C or for devices designed to drive
inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and Delta-Tj
> 40C or for devices designed to drive
inductive loads.
JESD22-
A103
High Temperature Storage Life (HTSL):
175oC for 504 hrs
TEST @ RH 77 1 77 8EME005DTZ00: 0/77
Commercial/Industrial Tier Qual Results
Qualification of 85% UDR SST 68HC908GP32 in CHD68HC908GP32
"GP32"
Name or "Varies"
PB or "Varies"
U050FXXD /85%UDRSST
Pkg Code 149/PDIP 40 Jim Carlquist - RMSD80
FSL-CHD-FAB/FSL-TJN-FM /FSL-KLM-FM Ken Song - R65800
M45Z
0 Ziep Tran - RSJP50
3.6058 X 3.7024 Tammie Gause - RA7914/Nancy Long - B07252
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
HTSLA103 175
oC for 504 hrs
Timed RO = 96hrs. MAX
FORMPPAP004XLS 7 of 9 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908GP32
"GP32"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life (HTOL):
10k Flash W/E Cycling (125oC) + HTOL @
Ta = 125°C for 168hrs
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(0M29Z):0/231@150C, 408Hrs
Q200122, GP32(QFP44 package):
0/77@125C, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic dada:
Q203338, GZ60 IMM Qual(0M29Z):0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Cycles Flash Endurance @ 125oC followed
by DRB @ 150oC for 1008hrs
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test R, H,
C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic dada:
Q202119, GZ60 Auto Qual(0M29Z):0/231
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005DTZ00: 0/5, Cpk>1.67 Performed by Assembly Site during qual lot
builds - PE to include this requirement in the
qual lot build ERF
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005DTZ00: 0/5, Cpk>1.67 Performed by Assembly Site during qual lot
builds - PE to include this requirement in the
qual lot build ERF
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage of
critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
DIM: Not Required
BOM: done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages e.g.
PBGA, Chip Scale, Micro Lead Frame (but NOT Flip
Chip).
Two reflow cycles at MSL reflow temperature before
shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted packages only; NOT
for Flip Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each of
5 parts)
0 0
End Point Minimum Sample Total Units Results
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and
internal criteria should be available to the
customer upon request for new technologies.
FORMPPAP004XLS 8 of 9 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
68HC908GP32
"GP32"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):
For AEC, test software shall meet requirements of
AEC-Q100-007.
Testing performed to the limits of device specification
in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all
qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage
level
0 0 pass Generic dada:
Q200122, GP32(44QFP):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/150/200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage
level
0 0 pass Generic dada:
Q200122, GP32(44QFP):
0/3@50
0/3@100
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
1 12 8EME005DTZ00:
0/3@250V
0/3@500V
0/3@750V(CP)
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-004
requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 0 0 pass Generic dada:
Q200122, GP32(44QFP): 0/6
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 5 0 0 Completed Done on GP32 44 QFP
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or > 90%
for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and part families
per AEC Q003.
GL (for information
only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake (4hrs/125°C,
or 2hrs/150°C) and retest; recovered units are GL
failures.
TEST @ R 6 0 0
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per customer/Freescale
agreement)
<40dBuV
150KHz - 1GHz
1 0 0
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number CAB Date
202119/203338 M29Z HC908GZ60 85% UDRSST FSL-CHD-FAB 22.061809 10181326M
200122 M45Z HC908GP32 85% UDRSST FSL-CHD-FAB 13.35011392 09523616M
Quartz# Mask Set Product-Qual Description/Part Number (s) Die Area
(mm2)
Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
203182 M45Z HC908GP32 13.35011392 TJN 40 PDIP/419 MC SUMITOMO EME-6300HXL D/ATCH SMTM CRM-1033B 25um Au
202843 M30Z HC705C9A 38.11 TJN 40 PDIP/419 MC SUMITOMO EME-6300HXL D/ATCH SMTM CRM-1033B 25um Au
Date Author
4-Aug-09 T. Gause
27-Aug-09 T. Gause
5 May, 2011 Nancy Long
General Notes:
1 -GP32 Wafer tech code U050FXXD
2 - GP32 BOM: SUMITOMO EME-6300HXL Mold Compound, SMTM CRM-1033B Die Attach Epoxy, 25um Gold Wire, K00035D020
3. - Samples without BI
Die Qual Generic data
Revision Comments
Rev O Generated Plan
Rev 1.0 Reviewed qual plan with Nancy Long - TJN Reliability, PM and PE team.
Rev 2.0 Add Qual Result
FORMPPAP004XLS 9 of 9 Freescale Rev T
(0M45Z) Electrical DistributionPer AEC Q100 Rev G, ED Appendix Rev B; any key datasheet parameter with Cpk < 1.67 will require justification and FSL NPI Quality approval.
Hot
Parameter Name in Datashee
t UnitsLower Limit
Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk
ULLUP_5.5 KOHM 2.00E+01 6.50E+01 41.7E+0 281.5E-3 25.67 41.3 4.258 4.696821 42.5E+0 469.2E-3 15.98 38.9 3.611 5.425167 PASS PASSRIDD_5.5V MA 0.00E+00 2.00E+01 10.1E+0 170.1E-3 19.46 10.866 0.108 25.09515 10.2E+0 112.6E-3 29.06 10.865 0.118 22.93717 PASS PASSWIDD_5.5V MA 0.00E+00 8.00E+00 3.0E+0 49.8E-3 20.37 3.228 0.051 21.06302 3.1E+0 20.0E-3 51.00 3.243 0.053 20.47314 PASS PASSSIDD_5.5V UA 0.00E+00 3.00E+00 228.0E-3 50.2E-3 4.83 0.345333 64.527 1.783934 304.0E-3 66.9E-3 4.00 0.815667 147.103 1.848293 PASS PASS
DD_TBM_5. UA 0.00E+00 2.00E+01 388.0E-3 122.1E-3 2.42 0.369333 67.001 1.837439 450.0E-3 167.9E-3 1.79 0.819 139.07 1.963046 PASS PASSRIDD_3.3V MA 0.00E+00 8.00E+00 3.3E+0 24.5E-3 44.91 3.506 0.035 33.87305 3.3E+0 45.6E-3 24.15 3.502 0.036 32.64555 PASS PASSWIDD_3.3V MA 0.00E+00 4.00E+00 1.3E+0 20.0E-3 21.33 1.38 0.028 16.26346 1.3E+0 26.1E-3 16.57 1.386 0.027 17.20126 PASS PASSSIDD_3.3V UA 0.00E+00 2.00E+00 120.0E-3 28.3E-3 7.31 0.207 38.05 1.816315 164.0E-3 35.8E-3 6.19 0.452667 88.12 1.71232 PASS PASS
DD_TBM_3. UA 0.00E+00 1.20E+01 116.0E-3 32.9E-3 6.25 0.208667 37.392 1.860173 188.0E-3 80.7E-3 2.84 0.474667 87.247 1.813508 PASS PASS
Room
Parameter Name in Datashee
t UnitsLow Limit
Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk
ULLUP_5.5 KOHM 2.00E+01 6.50E+01 34.6E+0 452.8E-3 10.75 38.52466 3.936 5.062761 38.0E+0 440.3E-3 13.61 38.4713 4.179 4.783414 PASS PASSRIDD 5.5V MA 0.00E+00 2.00E+01 10.1E+0 86.5E-3 38.14 10.860 0.115 23.62888 10.1E+0 47.7E-3 68.94 10.88 0.121 22.4483 PASS PASS
Report Date: 531/Mar/11
CHD Devices Pre HTOL SND Devices Pre HTOL CHD Devices Post HTOL SND Devices Post HTOLPre CHD mean+-1
SND sigma or
+-10%
Post CHD mean+-1
SND sigma or
+-10%Comment
85C 85C 85C 85C
CHD Devices Pre HTOL SND Devices Pre HTOL CHD Devices Post HTOL SND Devices Post HTOLPre CHD mean+-1
SND sigma or
+-10%
Post CHD mean+-1
SND sigma or
+-10%Comment
25C 25C 25C 25C
RIDD_5.5V MA 0.00E+00 2.00E+01 10.1E+0 86.5E 3 38.14 10.860 0.115 23.62888 10.1E+0 47.7E 3 68.94 10.88 0.121 22.4483 PASS PASSWIDD_5.5V MA 0.00E+00 8.00E+00 3.0E+0 32.9E-3 30.67 3.227 0.056 19.06819 3.1E+0 41.5E-3 24.53 3.239 0.054 20.06514 PASS PASSSIDD_5.5V UA 0.00E+00 3.00E+00 70.0E-3 29.7E-3 6.47 0.389333 74.968 1.731105 76.0E-3 26.1E-3 7.36 0.75 147.602 1.69375 PASS PASS
DD_TBM_5. UA 0.00E+00 2.00E+01 64.0E-3 26.1E-3 7.21 0.41 76.609 1.783946 88.0E-3 30.3E-3 6.46 0.766667 141.454 1.806635 PASS PASSRIDD_3.3V MA 0.00E+00 8.00E+00 3.3E+0 41.5E-3 26.27 3.504 0.038 30.72071 3.3E+0 59.0E-3 18.67 3.51 0.039 30.10564 PASS PASSWIDD_3.3V MA 0.00E+00 4.00E+00 1.3E+0 21.9E-3 20.02 1.379 0.033 14.02269 1.3E+0 38.5E-3 11.40 1.386 0.029 16.01962 PASS PASSSIDD_3.3V UA 0.00E+00 2.00E+00 28.0E-3 22.8E-3 7.72 0.280 51.461 1.813657 32.0E-3 17.9E-3 9.91 0.412667 66.744 2.060954 PASS PASS
DD_TBM_3. UA 0.00E+00 1.20E+01 21.0E-3 17.9E-3 9.54 0.296667 56.832 1.740019 32.0E-3 22.8E-3 7.78 0.46 89.904 1.70552 PASS PASS
Cold
Parameter Name in Datashee
t UnitsLow Limit
Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk
ULLUP_5.5 KOHM 2.00E+01 6.50E+01 41.9E+0 499.2E-3 14.60 35.3 7.364 1.994663 38.8E+0 333.3E-3 14.85 38.75 3.21 6.028883 PASS PASSRIDD_5.5V MA 0.00E+00 2.00E+01 9.8E+0 128.5E-3 25.54 10.453 0.122 23.39812 10.0E+0 134.5E-3 24.73 10.851 0.113 24.1207 PASS PASSWIDD_5.5V MA 0.00E+00 8.00E+00 3.0E+0 42.4E-3 23.73 3.161 0.06 17.69653 3.0E+0 67.2E-3 15.03 3.234 0.052 20.93139 PASS PASSSIDD_5.5V UA 0.00E+00 3.00E+00 40.0E-3 24.5E-3 7.35 0.392667 134.982 1.852724 64.0E-3 66.9E-3 2.81 0.348667 56.001 2.075366 PASS PASS
DD_TBM_5. UA 0.00E+00 2.00E+01 36.0E-3 26.1E-3 6.85 0.364138 138.912 1.988686 76.0E-3 59.0E-3 3.25 0.34667 65.534 1.773463 PASS PASSRIDD_3.3V MA 0.00E+00 8.00E+00 3.2E+0 81.2E-3 13.05 14.657 61.447 16.20534 3.2E+0 24.5E-3 43.27 3.488 0.049 23.65142 PASS PASSWIDD_3.3V MA 0.00E+00 4.00E+00 1.3E+0 36.3E-3 11.67 1.367 0.044 10.34224 1.3E+0 24.5E-3 17.96 1.379 0.027 17.18157 PASS PASSSIDD_3.3V UA 0.00E+00 2.00E+00 14.0E-3 8.9E-3 18.78 0.205 70.257 1.829516 28.0E-3 11.0E-3 16.07 0.204667 37.759 1.806777 PASS PASS
DD_TBM_3. UA 0.00E+00 1.20E+01 20.0E-3 11.0E-3 15.58 0.2 70.074 1.963014 32.0E-3 11.0E-3 16.19 0.22 32.8 2.235749 PASS PASS
CHD Devices Pre HTOL SND Devices Pre HTOL CHD Devices Post HTOL SND Devices Post HTOLPre CHD mean+-1
SND sigma or
+-10%
Post CHD mean+-1
SND sigma or
+-10%Comment
-40C -40C -40C -40C
Qualification Results for the FAB Site Transfer
From Freescale Sendai FabTo Freescale Chandler Fab
For HC908GZ60FSL-CHD- Fab/Mask M29Z
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
Technology:
Package: Design Engr: QUARTZ Tracking #: 202119
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below may
be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-10-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-10-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C
LOTA:
8EMHA1AP7000
UQQAC1051C
LOTB:
8EMHA1AVA600
UQQAD1052C
LOTC
8EMHA1C0MJ00
UQQAE1101C
CAB Approval
Signature & Date:
10181326M
May-13-2011
LotD:
8EMHA1DAJN00
UQQAA1109A
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document otherwise
with justification)
TEST @ RH pass Generic data:
Q190677, 68HC908AZ60A: 0/693
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Generic data:
Q190677, 68HC908AZ60A: 0/231
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @ MSL3,
260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Generic data:
Q190677, 68HC908AZ60A: 0/231
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
For AEC only: WBP after TC on 5 devices from 1
lot; 2 bonds per corner and one mid-bond per side on
each device. Record which pins were used.
TEST @ H
For AEC: WBP =/> 3
grams
77 0 0 pass Generic data:
Q190677, 68HC908AZ60A: 0/231,
WP: 0/15, Min>3
PC + PTC
JESD22-
A105
Preconditioning plus Power Temperature Cycle
(PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices
designed to drive inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices
designed to drive inductive loads.
Ziep Tran - RSJP50
Tammie Gause - RA7914/Nancy Long - B07252
M29Z
0/1
4.697x4.697
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
Wang Na-b34501
Qualification of 85% UDR SST 68HC908GZ60 in CHD68HC908GZ60
"GZ60"
U050FXXD /85%UDRSST
Pkg Code 6057/QFP 64 14*14*2.2P0.8
FSL-CHD-FAB/FSL-KLM-FM /FSL-KLM-FM
Jim Carlquist - RMSD80
Name or "Varies"
PB or "Varies"
AEC-Q100F Qual Results
Trace/DateCode:
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC
and as required per test conditions.
This testing is performed by Freescale Reliability Lab (FSL-KLM-FM) unless otherwise noted in the Comments.
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
150°C for 1000 hrs or 175oC for 168hrs and 500 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 0 0 pass Generic data:
Q190677, 68HC908AZ60A:
0/77@150C, 1008Hrs
FORMPPAP004XLS 1 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life (HTOL):
10k Flash W/E Cycling (125oC) + HTOL
Ta = 150°C for 408hrs
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 3 231 LotA: 0/77
LotB: 0/77
LotC: 0/77
HTOL
JESD22-
A108
High Temperature Operating Life (HTOL):
Ta = 125°C for 168hrs
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 1 77 LotD(1M29Z):0/77 With BI samples
1M29Z with LVI tweak, revision on
CT&M1 layer
ELFR
AEC Q100-008
Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 3 2400 LotA: 0/800
LotB: 0/800
LotC: 0/800
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Cycles Flash Endurance @ 5V, 125oC
followed by DRB @ 150oC for 504hrs and
1008hrs
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test R, H,
C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 3 231 LotA: 0/77
LotB: 0/77
LotC: 0/77
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5
units
3 15 lotA: 0/5, Cpk>1.67
lotB: 0/5, Cpk>1.67
lotC: 0/5, Cpk>1.67
Refer to pkg qual vehicles at the
bottom of the plan.
WBP MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5
units
3 15 lotA: 0/5, Cpk>1.67
lotB: 0/5, Cpk>1.67
lotC: 0/5, Cpk>1.67
Refer to pkg qual vehicles at the
bottom of the plan.
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage of
critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
DIM: Not Required
BOM: done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages e.g.
PBGA, Chip Scale, Micro Lead Frame (but NOT Flip
Chip).
Two reflow cycles at MSL reflow temperature before
shear.
Cpk = or >1.67 10
(5 balls from a min.
of 10 devices)
0 0 For solder ball mounted packages
only; NOT for Flip Chips.
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each
of 5 parts)
0 0
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 2 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):
For AEC, test software shall meet requirements of
AEC-Q100-007.
Testing performed to the limits of device specification
in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of
all qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage
level
1 12 LotD(1M29Z):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/150/200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage
level
1 12 LotD(1M29Z):
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
1 9 LotD(1M29Z):
0/3@250V
0/3@500V
0/3@750V
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-004
requirements for AEC.
Ta= 125oC, 100mA
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 1 6 LotD(1M29Z): 0/6
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED)
Pre&Post HTOL
TEST @ RHC 30 3(0M29Z) 90 LotA: Completed, Cpk>1.67
LotB: Completed, Cpk>1.67
LotC: Completed, Cpk>1.67
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED)
Pre&Post HTOL
TEST @ RHC 30 1(1M29Z) 30 LotD(1M29Z): Completed, Cpk>1.67
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or > 90%
for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and part families
per AEC Q003.
GL (for information only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake (4hrs/125°C,
or 2hrs/150°C) and retest; recovered units are GL
failures.
TEST @ R 6 1 6 LotA: 0/6
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per customer/Freescale
<40dBuV
150KHz - 1GHz
1 0 0 done on GZ60 32LQFP7x7 Package
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
EMCEmissions done on case-by-case basis per customer/Freescale
agreement)
Quartz# Mask Set Product-Qual Description/Part Number (s) Die Area
(mm2)
Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
190677 M73Y 68HC908AZ60A 28.974027 KLM QFP 64 14*14/6057 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL Au 25um
Date Author
4-Aug-09 T. Gause
27-Aug-09 T. Gause
May-5-2011 Nancy LongRev 2.0 Add Qual Result
General Notes:
1 -GZ60 Wafer tech code U050FXXD
2 - GZ60 BOM: HITACHI 9200HF10M Mold Compound, SUMITOMO CRM-1064MBL Die Attach Epoxy, 25um Gold Wire
Package Qual Generic data
Revision Comments
Rev O Generated Plan
Rev 1.0 Reviewed qual plan with H.P. Wang - TJN Reliability Engr, PE and PM team.
FORMPPAP004XLS 3 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 1.1 - Result
Date: May 5, 2011
Technology:
Package: Design Engr: QUARTZ Tracking #: 202100
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below may
be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-10-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-10-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOTA:
ME005FK200
CTNAZY1047B
LOT B
N/A
LOT C
N/A
CAB Approval
Signature & Date:
10181326M
May-13-2011
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document otherwise
with justification)
TEST @ RH LotA: 0/231 Generic data:
Q208757, GR8A; 0/693
Q205779, JL16: 0/231
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5.5V
Timed RO of 48hrs. MAX
TEST @ RH 77 1 77 LotA: 0/77 Generic data:
Q208757, GR8A; 0/231
Q205779, JL16: 0/77
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @ MSL3,
260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 1 77 LotA: 0/77 Generic data:
Q208757, GR8A; 0/231
Q205779, JL16: 0/77
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
For AEC only: WBP after TC on 5 devices from 1
lot; 2 bonds per corner and one mid-bond per side on
each device. Record which pins were used.
TEST @ H
For AEC: WBP =/> 3
grams
77 1 77 LotA: 0/77, WP: 0/5, min>3g Generic data:
Q208757, GR8A; 0/231
Q205779, JL16: 0/77
PC + PTC
JESD22-
A105
Preconditioning plus Power Temperature Cycle
(PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices
designed to drive inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices
designed to drive inductive loads.
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC
and as required per test conditions.
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM Wang Na-b34501
M29Z Ziep Tran - RSJP50
4.697x4.697 Tammie Gause - RA7914/Nancy Long - B07252
AEC-Q100F Qual Results
Qualification of 85% UDR SST 68HC908GZ60 in CHD68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
U050FXXD /85%UDRSST
Pkg Code 6300 & 6089/LQFP 48 7*7*1.4P0.5 & LQFP 32 7*7*1.4P0.8 Jim Carlquist - RMSD80
Bias = designed to drive inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 1 77 LotA: 0/77
FORMPPAP004XLS 4 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life (HTOL):
Ta = 125°C for 1008hrs or 150°C for 408hrs (MC
Rd Pt.)
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(0M29Z):0/231@150C,
408Hrs
Q202119, GZ60 Auto
Qual(1M29Z):0/77@125C, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(0M29Z):0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Cycles Flash Endurance @ 125oC followed
by DRB @ 150oC for 1008hrs
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test R, H,
C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(0M29Z):0/231
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5
units
1 5 LotA: 0/5, Cpk>1.67 Performed by Assembly Site during
qual lot builds - PE to include this
requirement in the qual lot build
ERF
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5
units
1 5 LotA: 0/5, Cpk>1.67 Performed by Assembly Site during
qual lot builds - PE to include this
requirement in the qual lot build
ERF
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage of
critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
DIM: Not Required
BOM: done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages e.g.
PBGA, Chip Scale, Micro Lead Frame (but NOT Flip
Chip).
Two reflow cycles at MSL reflow temperature before
shear.
Cpk = or >1.67 10
(5 balls from a min.
of 10 devices)
0 0 For solder ball mounted packages
only; NOT for Flip Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each
of 5 parts)
0 0
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 5 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):
For AEC, test software shall meet requirements of
AEC-Q100-007.
Testing performed to the limits of device specification
in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of
all qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage
level
0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(1M29Z):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage
level
0 0 pass Generic dada:
Q202119, GZ60 Auto Qual(1M29Z)
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
1 9 LotA:
0/3@250V
0/3@500V
0/3@750V(CP)
Use 48 LQFP Pkg
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-004
requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(1M29Z): 0/6@100mA
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC AEC: 30 0 0 Completed Done on GZ60 Auto Qual
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or > 90%
for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and part families
per AEC Q003.
GL (for information only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake (4hrs/125°C,
or 2hrs/150°C) and retest; recovered units are GL
failures.
TEST @ R 6 1 6 LotA: 0/6
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per customer/Freescale
agreement)
<40dBuV
150KHz - 1GHz
1 1 1 done on LQFP32
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
Die Qual Vehicles
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number CAB Date
202119/203338 M29Z HC908GZ60 85% UDRSST FSL-CHD-FAB 22.061809 10181326M May-13-2011
32/48 LQFPQuartz# Mask Set Product-Qual Description/Part Number (s) Die Area
(mm2)
Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
202100 M29Z 908GZ60 22.061809 FSL-TJN-FM LQFP 48 7*7/6089 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
208757 M70Z 908GR8A 14.007536 FSL-TJN-FM LQFP 32 7*7/6300 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
205779 M49Z 908JL16 9.66895168 FSL-TJN-FM LQFP 32 7*7/6300 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
Date Author
4-Aug-09 T. Gause
27-Aug-09 T. Gause
5-May-11 Nancy Long
Rev 1.0 Reviewed qual plan with H.P. Wang - TJN Reliability Engr, PE and PM team.
General Notes:
1 - GZ60 Wafer tech code U050FXXD
2 - GZ60 BOM: HITACHI 9200HF10M Mold Compound, SUMITOMO CRM-1064MBL Die Attach Epoxy, 25um Gold Wire
Revision Comments
Rev O Generated Plan
Rev 1.1 Add Qual Result
FORMPPAP004XLS 6 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
Technology:
Package: Design Engr: QUARTZ Tracking #: 203338
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below may
be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-10-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-10-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOTA:
8EMHA1AP7101
UQQAC1051C
TP71755.1Y
LOTB:
8EMHA1AVA600
UQQAD1052C
TP72259.45A
LOTC:
8EMHA1C0MK00
UQQAE1101C
TP61669.44H
CAB Approval
Signature & Date:
10181326M
May-13-2011
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document otherwise
with justification)
TEST @ RH pass Generic data:
Q190677, 68HC908AZ60A: 0/693
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Generic data:
Q190677, 68HC908AZ60A: 0/231
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @ MSL3,
260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Generic data:
Q190677, 68HC908AZ60A: 0/231
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
TEST @ H
For AEC: WBP =/> 3
grams
77 0 0 pass Generic data:
Q190677, 68HC908AZ60A: 0/231,
WP: 0/15, Min>3
PC + PTC
JESD22-
A105
Preconditioning plus Power Temperature Cycle
(PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices
designed to drive inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices
designed to drive inductive loads.
4.697x4.697 Tammie Gause - RA7914/Nancy Long - B07252
FSL-CHD-FAB/FSL-KLM-FM /FSL-KLM-FM Wang Na-b34501
M29Z
0/1 Ziep Tran - RSJP50
Jim Carlquist - RMSD80
Qualification of 85% UDR SST 68HC908GZ60 in CHD
Commercial/Industrial Tier Qual Results
68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
U050FXXD /85%UDRSST
Pkg Code 6057/QFP 64 14*14*2.2P0.8
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-KLM-FM) unless otherwise noted in the Comments.
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC
and as required per test conditions.
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
150°C for 1000 hrs or 175oC for 168hrs and 500 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 0 0 pass Generic data:
Q190677, 68HC908AZ60A:
0/77@150C, 1008Hrs
FORMPPAP004XLS 7 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life (HTOL):
Ta = 125°C for 1008hrs or 150°C for 408hrs (MC
Rd Pt.)
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(0M29Z):0/231@150C,
408Hrs
Q202119, GZ60 Auto
Qual(1M29Z):0/77@125C, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 3 2400 LotA: 0/800
LotB: 0/800
LotC: 0/800
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Cycles Flash Endurance @ 125oC followed
by DRB @ 150oC for 1008hrs
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test R, H,
C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(0M29Z):0/231
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5
units
0 0 pass GZ60 64QFP Auto Qual: Cpk>1.67
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5
units
0 0 pass GZ60 64QFP Auto Qual: Cpk>1.67
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage of
critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
DIM: Not Required
BOM: Done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages e.g.
PBGA, Chip Scale, Micro Lead Frame (but NOT Flip
Chip).
Two reflow cycles at MSL reflow temperature before
shear.
Cpk = or >1.67 10
(5 balls from a min.
of 10 devices)
0 0 For solder ball mounted packages
only; NOT for Flip Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each
of 5 parts)
0 0 `
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
spares NA=Not Applicable
EM
Electro Migration (EM) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
FORMPPAP004XLS 8 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):
For AEC, test software shall meet requirements of
AEC-Q100-007.
Testing performed to the limits of device specification
in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of
all qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage
level
0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(1M29Z):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage
level
0 0 pass Generic dada:
Q202119, GZ60 Auto Qual(1M29Z)
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(1M29Z):
0/3@250V
0/3@500V
0/3@750V
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-004
requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(1M29Z): 0/6@100mA
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 30 0 0 Completed Done on GZ60 Auto Qual
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or > 90%
for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and part families
per AEC Q003.
GL (for information only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake (4hrs/125°C,
or 2hrs/150°C) and retest; recovered units are GL
failures.
TEST @ R 6 0 0 AEC Requirement. Not required for
Commercial/Industrial.
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per customer/Freescale
agreement)
<40dBuV
150KHz - 1GHz
1 0 0 done on GZ60 32LQFP7x7 Package
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
Quartz# Mask Set Product-Qual Description/Part Number (s) Die Area
(mm2)
Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
190677 M73Y 68HC908AZ60A 28.974027 KLM QFP 64 14*14/6057 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL Au 25um
Date Author
Apr-19-10 NancyL
Apr-24-2010 NancyL
May-5-2011 Nancy Long
General Notes:
1 -GZ60 Wafer tech code U050FXXD
2 - GZ60 BOM: HITACHI 9200HF10M Mold Compound, SUMITOMO CRM-1064MBL Die Attach Epoxy, 25um Gold Wire
Package Qual Generic data
Revision Comments
Rev O Add qual plan for no BI part
Rev 1.0 Add qual plan for no BI part, need 2400 units ELFR
Rev 2.0 Add Qual Result
FORMPPAP004XLS 9 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 1.0 - Result
Date: May 5, 2011
Technology:
Package: Design Engr: QUARTZ Tracking #: NA
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below may
be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-10-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-10-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT A LOT B LOT C CAB Approval
Signature & Date:
10181326M
May-13-2011
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document otherwise
with justification)
TEST @ RH pass Generic data:
Q208757, GR8A; 0/693
Q205779, JL16: 0/231
Q202100; GZ60 48LQFP Auto
qual: 0/231
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5.5V
Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Generic data:
Q208757, GR8A; 0/231
Q205779, JL16: 0/77
Q202100; GZ60 48LQFP Auto
qual: 0/77
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @ MSL3,
260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Generic data:
Q208757, GR8A; 0/231
Q205779, JL16: 0/77
Q202100; GZ60 48LQFP Auto
qual: 0/77
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
TEST @ H
For AEC: WBP =/> 3
grams
77 0 0 pass Generic data:
Q208757, GR8A; 0/231
Q205779, JL16: 0/77
Q202100; GZ60 48LQFP Auto
qual: 0/77
PC + PTC
JESD22-
A105
Preconditioning plus Power Temperature Cycle
(PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices
designed to drive inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices
Commercial/Industrial Tier Qual Results
Qualification of 85% UDR SST 68HC908GZ60 in CHD68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
U050FXXD /85%UDRSST
Pkg Code 6300 & 6089/LQFP 48 7*7*1.4P0.5 & LQFP 32 7*7*1.4P0.8 Jim Carlquist - RMSD80
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM Wang Na-b34501
M29Z
0/1 Ziep Tran - RSJP50
4.697x4.697 Tammie Gause - RA7914/Nancy Long - B07252
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC
and as required per test conditions.
PTCPTC = °C to °C for 1000 cycles;
Bias =
Delta-Tj > 40C or for devices
designed to drive inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
150°C for 1008 hrs or 175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 0 0 pass Generic data:
Q208757, GR8A; 0/77
Q205779, JL16: 0/77
Q202100; GZ60 48LQFP Auto
qual: 0/77
FORMPPAP004XLS 10 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life (HTOL):
Ta = 125°C for 1008hrs or 150°C for 408hrs (MC
Rd Pt.)
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(0M29Z):0/231@150C,
408Hrs
Q202119, GZ60 Auto
Qual(1M29Z):0/77@125C, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Comm/Ind: 1yr lifetime
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic dada:
Q203338, GZ60 IMM
Qual(0M29Z):0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Cycles Flash Endurance @ 125oC followed
by DRB @ 150oC for 1008hrs
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test R, H,
C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(0M29Z):0/231
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5
units
0 0 pass Generic data:
GZ60 32_48LQFP Auto Qual:
Cpk>1.67
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5
units
0 0 pass Generic data:
GZ60 32_48LQFP Auto Qual:
Cpk>1.67
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage of
critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
DIM: Not Required
BOM: Done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages e.g.
PBGA, Chip Scale, Micro Lead Frame (but NOT Flip
Chip).
Two reflow cycles at MSL reflow temperature before
shear.
Cpk = or >1.67 10
(5 balls from a min.
of 10 devices)
0 0 For solder ball mounted packages
only; NOT for Flip Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each
of 5 parts)
0 0
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations
and internal criteria should be
available to the customer upon
request for new technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 11 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908GZ60
"GZ60"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):
For AEC, test software shall meet requirements of
AEC-Q100-007.
Testing performed to the limits of device specification
in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of
all qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage
level
0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(1M29Z):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage
level
0 0 pass Generic dada:
Q202119, GZ60 Auto Qual(1M29Z)
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
0 0 pass Generic dada:
Q202100, GZ60 48 LQFP Pkg Auto
Qual:
0/3@250V
0/3@500V
0/3@750V
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-004
requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(1M29Z): 0/6@100mA
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 30 0 0 Completed Done on GZ60 Auto Qual
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or > 90%
for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and part families
per AEC Q003.
GL (for information only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake (4hrs/125°C,
or 2hrs/150°C) and retest; recovered units are GL
failures.
TEST @ R 6 0 0 AEC Requirement. Not required for
Commercial/Industrial.
SAE J1752/3 -
Radiated
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
<40dBuV
150KHz - 1GHz
1 0 0
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
EMC
Radiated
Emissions
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per customer/Freescale
agreement)
150KHz - 1GHz
Die Qual Generic DataQuartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number CAB Date
202119/203338 M29Z HC908GZ60 85% UDRSST FSL-CHD-FAB 22.061809 10181326M May-13-2011
32/48 LQFP Package Generic Data
Quartz# Mask Set Product-Qual Description/Part Number (s)Die Area
(mm2)Pkg Code Pkg Description Mold Description EPOXY Description Wire Description
202100 M29Z 908GZ60 22.061809 FSL-TJN-FM LQFP 48 7*7/6089 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
208757 M70Z 908GR8A 14.007536 FSL-TJN-FM LQFP 32 7*7/6300 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
205779 M49Z 908JL16 9.66895168 FSL-TJN-FM LQFP 32 7*7/6300 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
Date Author
24-Apr-10 Nancy Long
4-May-11 Nancy Long
General Notes:
1 -GZ60 Wafer tech code U050FXXD
2 - GZ60 BOM: HITACHI 9200HF10M Mold Compound, SUMITOMO CRM-1064MBL Die Attach Epoxy, 25um Gold Wire
CommentsRevision
Rev O Add qual plan for no BI part
Rev 1.0 Add Qual Result
FORMPPAP004XLS 12 of 12 Freescale Rev T
(1M29Z) Electrical DistributionReport Date: 23/Apr/11Report Revision: 0
Per AEC Q100 Rev G, ED Appendix Rev B; any key datasheet parameter with Cpk < 1.67 will require justification and FSL NPI Quality approval.
Hot CHD Devices Pre HTOL SND Devices Pre HTOL CHD Devices Post HTOL SND Devices Post HTOL
Pre CHD mean+-1
SND sigma or +-10%
Post CHD mean+-1
SND sigma or +-10%
Comment
125C 125C 125C 125C
Parameter Name in Datasheet UnitsLower Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk
Run Idd 5.5V mA NA 30.00 17.24431 0.22682 15.80677 15.404 0.150 30.270 16.90303 0.37413 9.88686 15.24431 0.22682 30.80677 PASS PASSWait Idd 5.5V mA NA 12.00 9.40750 0.08106 8.60421 8.395 0.296 4.623 9.35292 0.10079 7.10111 8.40750 0.08106 4.60421 PASS PASSStop Idd 5.5V uA NA 10.00 1.55419 0.48816 4.74281 1.489 0.187 17.939 1.27956 0.18358 14.92611 1.48419 0.48816 17.74281 PASS PASS
Stop Idd TBM 5.5V mA NA 1.25 0.01274 0.54559 7.78158 0.010 0.617 5.566 0.01124 0.42181 8.88345 0.01074 0.54559 5.78158 PASS PASSStop Idd TBM & LVI 5.5V mA NA 1.60 0.19081 3.81749 16.66064 0.203 6.988 9.675 0.19571 5.35486 12.18271 0.20281 3.81749 16.66064 PASS PASS
Reset Pullup kΩ 20.00 65.00 26.31578 2.84790 9.28636 25.641 2.772 8.469 25.00000 1.57779 14.58981 25.64102 2.84790 9.28636 PASS PASSIrq Pullup kΩ 20.00 65.00 26.45502 2.75572 9.67938 25.907 3.200 8.042 25.00000 2.13321 10.81853 25.90673 2.75572 9.67938 PASS PASS
Room CHD Devices Pre HTOL SND Devices Pre HTOL CHD Devices Post HTOL SND Devices Post HTOL
Pre CHD mean+-1
SND sigma or +-10%
Post CHD mean+-1
SND sigma or +-10%
Comment
25C 25C 25C 25C
Parameter Name in Datasheet Units Low Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std CpkRun Idd 5.5V mA NA 30.00 16.86967 0.11262 38.86226 15.235 0.138 35.734 16.85281 0.10941 40.05421 15.91252 0.13633 32.00064 PASS PASSWait Idd 5.5V mA NA 12.00 9.71278 0.07919 9.62745 9.033 0.084 15.737 9.68905 0.07919 9.72719 9.73583 0.08567 8.80970 PASS PASSStop Idd 5.5V uA NA 10.00 0.06472 0.11569 8.16946 0.041 0.113 30.484 -0.02428 0.18538 5.25817 0.11304 0.20788 4.83129 PASS PASS
Stop Idd TBM 5.5V mA NA 1.25 0.01015 0.13188 22.35681 0.010 0.381 7.698 0.01005 0.21816 13.67630 0.01004 0.26540 11.24753 PASS PASSStop Idd TBM & LVI 5.5V mA NA 1.60 0.20229 6.21948 4.70104 0.206 9.005 3.096 0.20214 6.31866 4.63497 0.20663 4.64334 6.63123 PASS PASS
Reset Pullup kΩ 20.00 65.00 23.69668 1.65096 9.78535 23.810 2.979 5.616 23.58490 1.72516 9.20453 23.80952 3.72886 5.10265 PASS PASSIrq Pullup kΩ 20.00 65.00 23.58490 2.27187 7.02748 23.810 3.067 5.393 23.58490 2.57906 6.19130 23.80952 2.83044 6.80973 PASS PASS
Cold CHD Devices Pre HTOL SND Devices Pre HTOL CHD Devices Post HTOL SND Devices Post HTOL
Pre CHD mean+-1
SND sigma or +-10%
Post CHD mean+-1
SND sigma or +-10%
Comment
-40C -40C -40C -40C
Parameter Name in Datasheet Units Low Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std CpkRun Idd 5.5V mA NA 30.00 16.91136 0.12018 35.74870 15.137 0.205 23.798 16.87688 0.11387 37.83068 15.79585 0.12703 34.12317 PASS PASSWait Idd 5.5V mA NA 12.00 9.94380 0.08667 7.90834 9.120 0.108 11.964 9.92236 0.07967 8.69216 9.92677 0.08208 8.41921 PASS PASSStop Idd 5.5V uA NA 10.00 0.12477 0.14196 22.95287 0.060 0.330 9.940 0.36990 0.18646 17.03684 0.27788 1.02396 3.13233 PASS PASS
Stop Idd TBM 5.5V mA NA 1.25 0.00998 0.14325 23.22957 0.010 0.446 7.450 0.01018 0.16642 20.39212 0.00916 0.98431 3.44116 PASS PASSStop Idd TBM & LVI 5.5V mA NA 1.60 0.20149 7.10218 9.45682 0.208 8.548 8.102 0.20150 7.16174 9.37837 0.20785 8.08048 8.32659 PASS PASS
Reset Pullup kΩ 20.00 65.00 23.14814 1.68453 10.91029 23.364 2.617 7.430 23.04147 1.62113 11.30105 23.36448 2.45038 8.74183 PASS PASSIrq Pullup kΩ 20.00 65.00 23.04147 2.33985 7.71721 23.256 2.831 6.745 23.04147 2.43772 7.41462 23.25581 2.16145 9.91556 PASS PASS
Qualification Results for the FAB Site Transfer
From Freescale Sendai FabTo Freescale Chandler Fab
For HC908JL16FSL-CHD- Fab/Mask M49Z
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
Technology:
Package: Design Engr: QUARTZ Tracking #: 205779Fab / Assembly
/
Final Test Sites: Product Engr:
(Signature/Date shown below
may be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-10-2011Die Size (in
mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-10-2011
Part Operating
Temp. Grade: Grade - 40°C to +85 °C Trace/DateCode:
CTCTZQ1050A LOT B LOT C CAB Approval
Signature & Date:
09513599M
May-20-2011
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document
otherwise with justification)
TEST @ RH 8EME005J3J00: 0/231 Generic data:
Q208757, QR8A; 0/693
Q202100; GZ60 48LQFP Auto
qual: 0/231
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test
(HAST):
PC before HAST (for SMDs only):
Required @ MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5.5V
Timed RO of 48hrs. MAX
TEST @ RH 77 1 77 8EME005J3J00: 0/77 Generic data:
Q208757, QR8A; 0/231
Q202100; GZ60 48LQFP Auto
qual: 0/77
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only):
Required @ MSL3, 260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 1 77 8EME005J3J00: 0/77 Generic data:
Q208757, QR8A; 0/231
Q202100; GZ60 48LQFP Auto
qual: 0/77
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
@ MSL3, 260oC
TC = -65°C to 150°C for 500 cycles.
TEST @ H 77 1 77 8EME005J3J00: 0/77: WP: 0/5, min>3g Generic data:
Q208757, QR8A; 0/231
Q202100; GZ60 48LQFP Auto
qual: 0/77
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC
and as required per test conditions.
Qualification of 85% UDR SST 68HC908JL16 in CHD68HC908JL16
"JL16"
U050FXXD /85%UDRSST
Pkg Code 6300/LQFP 32 7*7*1.4P0.8
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM
Jim Carlquist - RMSD80
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
2959.4x3267.2mm
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
Tao Ren - B01387
Ziep Tran - RSJP50
Tammie Gause - RA7914/Nancy Long - B07252
M49Z
0
Commercial/Industrial Tier Results
Name or "Varies"
PB or "Varies"
PC + PTC
JESD22-
A105
Preconditioning plus Power
Temperature Cycle (PC+PTC):
(See AEC-Q100 for test applicability
criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life
(HTSL):
175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH(C) 77 1 77 8EME005J3J00: 0/77
FORMPPAP004XLS 1 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life
(HTOL):
10k WE @125C, 5V+HTOL 6V@
Ta = 125°C for 168hrs
Bias = 6.0V
(Devices incorporating NVM shall
receive 'NVM endurance preconditioning
(10K W/E @ 125oC)' prior to this test,
and special NVM test sequencing after
this test)
Timed RO of 96hrs. MAX
TEST @ RHC 77 1 77 8EME005J3J00: 0/77 Generic Data:
Q202069, QC16 Auto:
0/231@125C, 6V, 1008Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic Data:
Q202069, QC16: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Flash W/E Cycling (125C)+Flash &
EE Erased State DRB @ 150oC for
1008hrs
Devices incorporating NVM shall receive
'NVM endurance preconditioning'(W/E
cycling). Test R, H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005J3J00: 0/5, Cpk>1.67 Performed by Assembly Site
during qual lot builds - PE to
include this requirement in the
qual lot build ERF
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005J3J00: 0/5, Cpk>1.67 Performed by Assembly Site
during qual lot builds - PE to
include this requirement in the
qual lot build ERF
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam
age prior to test.
If production burn-in is done, samples
must also undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site
Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site
Transfer
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid
98A drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is
accurate.
DIM: Not Required
BOM: done
SBS
AEC-Q100-
010
Solder Ball Shear (SBS):
Performed on all solder ball mounted
packages e.g. PBGA, Chip Scale, Micro
Lead Frame (but NOT Flip Chip).
Two reflow cycles at MSL reflow
temperature before shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted
packages only; NOT for Flip
Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each
of 5 parts)
0 0
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TDDB
Time Dependent Dielectric
Breakdown (TDDB)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
HCI
Hot Carrier Injection (HCI) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
SM
Stress Migration (SM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
NBTI
Negative Bias Temperature Instability
(NBTI)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 2 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional /
Parametrics (TEST):
For AEC, test software shall meet
requirements of AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit
value.
0 Fails All All All Completed This action refers to Final Testing
of all qualification units.
HBM
AEC-Q100-
002 /
JESD22-
A114E Jan
2007
ElectroStatic Discharge/
Human Body Model Classification
(HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for
classification levels.
TEST @ RH
2KV min.
3 units per Voltage
level
1 12 8EME005J3J00:
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-
003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for
classification levels.
TEST @ RH
200V min.
3 units per Voltage
level
1 12 8EME005J3J00:
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-
011
ElectroStatic Discharge/
Charged Device Model Classification
(CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for
classification levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
1 9 8EME005J3J00:
0/3@250V
0/3@500V
0/3@750V(CP)
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-
Q100-004 requirements for AEC.
Ta= 85oC, 100mA
Vsupply = 5.5V Maximum operating
voltage
TEST @ RH 6 1 6 8EME005J3J00: 0/6
ED
AEC-Q100-
009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 5 1 5 Completed
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and
part families per AEC Q003.
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate
Leakage (GL):
TEST @ R 6 0 0
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
GL (for
information
only)
Q100-006 Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is
performed for information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest;
recovered units are GL failures.
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test
applicability; done on case-by-case basis
per customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number
202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M
205779 M49Z HC908JL16 85% UDRSST FSL-CHD-FAB 9.54481968 09513599M
32/48 LQFP Qual Vehicle InfoQuartz# Mask Set Product-Qual Description/Part Number (s) Die Area
(mm2)
Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
202100 M29Z 908GZ60 22.061809 FSL-TJN-FM LQFP 48 7*7/6089 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
208757 M70Z 908GR8A 14.007536 FSL-TJN-FM LQFP 32 7*7/6300 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
205779 M49Z 908JL16 9.66895168 FSL-TJN-FM LQFP 32 7*7/6300 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
Date Author
4-Aug-09 T. Gause
17-Sep-09 T. Gause
5-May-11 Nancy LongRev 2.0 Add Qual result
Rev 1.0 Replaced EDR stress with HTSL based on generic data that will be obtained from QC16 that has the same flash array.
General Notes:
1 -JL16 Wafer tech code U050FXXD
2 -JL16 BOM: HITACHI 9200HF10M Mold Compound, SUMITOMO CRM-1064MBL Die Attach Epoxy, 25um Gold Wire
Die Qual Vehicles
Revision Comments
Rev O Generated Plan
FORMPPAP004XLS 3 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 1.0 - Result
Date: May 5, 2011
Technology:
Package: Design Engr: QUARTZ Tracking #: 205778Fab / Assembly
/
Final Test Sites: Product Engr:
(Signature/Date shown below
may be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Shong Lee Ming-B21406
May-11-2011Die Size (in
mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-11-2011
Part Operating
Temp. Grade: Grade - 40°C to +85 °C Trace/DateCode:
LOT A
N9NJ05002J00-1
XNXX1050X
LOT B
N9NJ05002J00-2
XNXX1050X
LOT C
N9NJ05002J00-3
XNXX1050X CAB Approval
Signature & Date:
09513599M
May-20-2011
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test
(HAST):
HAST = 130°C/85%RH for 96 hrs.
Bias = 5.5V
Timed RO of 48hrs. MAX
TEST @ RH 77 3 231 N9NJ05002J00-1: 0/77
N9NJ05002J00-2: 0/77
N9NJ05002J00-3: 0/77
AC
JESD22-
A102
A118
Autoclave (AC):
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 3 231 N9NJ05002J00-1: 0/77
N9NJ05002J00-2: 0/77
N9NJ05002J00-3: 0/77
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
TC = -65°C to 150°C for 500 cycles.
TEST @ H 77 3 231 N9NJ05002J00-1: 0/77, WP: 0/5, Min>3g
N9NJ05002J00-2: 0/77
N9NJ05002J00-3: 0/77
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
M49Z
0 Ziep Tran - RSJP50/Shong Lee Ming-B21406
2.9594x3.2672mm Tammie Gause - RA7914/Nancy Long - B07252
Commercial/Industrial Tier Results
Qualification of 85% UDR SST 68HC908JL16 in CHD68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
U050FXXD /85%UDRSST
Pkg Code 6125/ 32 PSDIP Jim Carlquist - RMSD80
FSL-CHD-FAB/NFME /FSL-TJN-FM Tao Ren - B01387
PC + PTC
JESD22-
A105
Preconditioning plus Power
Temperature Cycle (PC+PTC):
(See AEC-Q100 for test applicability
criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life
(HTSL):
175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 1 77 N9NJ05002J00-1: 0/77
FORMPPAP004XLS 4 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life
(HTOL):
Ta = 125°C for 168hrs
43hrs=1yr lifetime
Bias = 6.0V
(Devices incorporating NVM shall
receive 'NVM endurance preconditioning
(10K W/E @ 125oC) prior to this test,
and special NVM test sequencing after
this test)
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16 Auto:
0/231@125C, 6V, 1008Hrs
Q205779, JL16: 0/77@125C,
6V, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic Data:
Q202069, QC16: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Flash W/E Cycling (125C)+Flash &
EE Erased State DRB @ 150oC for
1008hrs
Devices incorporating NVM shall receive
'NVM endurance preconditioning'(W/E
cycling). Test R, H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67 Performed by Assembly Site
during qual lot builds - PE to
include this requirement in the
qual lot build ERF
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67 Performed by Assembly Site
during qual lot builds - PE to
include this requirement in the
qual lot build ERF
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam
age prior to test.
If production burn-in is done, samples
must also undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site
Transfer
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site
Transfer
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
PDB100 PD per FSL 98A drawing Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid
98A drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is
accurate.
DIM: Not Required
BOM: done
SBS
AEC-Q100-
010
Solder Ball Shear (SBS):
Performed on all solder ball mounted
packages e.g. PBGA, Chip Scale, Micro
Lead Frame (but NOT Flip Chip).
Two reflow cycles at MSL reflow
temperature before shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted
packages only; NOT for Flip
Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each
of 5 parts)
0 0
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TDDB
Time Dependent Dielectric
Breakdown (TDDB)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
HCI
Hot Carrier Injection (HCI) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
SM
Stress Migration (SM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
NBTI
Negative Bias Temperature Instability
(NBTI)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 5 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional /
Parametrics (TEST):
For AEC, test software shall meet
requirements of AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit
value.
0 Fails All All All completed This action refers to Final Testing
of all qualification units.
HBM
AEC-Q100-
002 /
JESD22-
A114E Jan
2007
ElectroStatic Discharge/
Human Body Model Classification
(HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for
classification levels.
TEST @ RH
2KV min.
3 units per Voltage
level
0 0 pass Generic data:
Q205779, JL16 32LQFP Qual :
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-
003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for
classification levels.
TEST @ RH
200V min.
3 units per Voltage
level
0 0 pass Generic data:
Q205779, JL16 32LQFP Qual :
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-
011
ElectroStatic Discharge/
Charged Device Model Classification
(CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for
classification levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
1 9 N9NJ05002J00-Lot1:
0/3@250V
0/3@500V
0/3@750V(CP)
Levels below 500V for all other
pins require customer approval.
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-
Q100-004 requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating
voltage
TEST @ RH 6 0 0 pass Generic data:
Q205779, JL16 32LQFP Qual :
0/6@100mA
ED
AEC-Q100-
009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC AEC: 30 0 0 Completed Done on JL16 32LQFP Qual
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and
part families per AEC Q003.
GL (for
information
only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate
Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is
performed for information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest;
recovered units are GL failures.
TEST @ R 6 0 0
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test
applicability; done on case-by-case basis
per customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number
202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M
205779 M49Z HC908JL16 85% UDRSST FSL-CHD-FAB 9.54481968 09513599M
32 PSDIP Qual Generic data
Quartz# Mask SetProduct-Qual Description/Part
Number (s)
Die Area
(mm2)Assembly Site Pkg Description/code Mold Description EPOXY Description Wire Description
205998 M49Z 68HC908JL16 9.54 NFME 32 PSDIP/6125 MOLD, EME6300H-6L SUMITOMO CRM-1033BF 25um Au
Date Author
4-Aug-09 T. Gause
5-May-11 Nancy longRev 1.0 Add Qual Result
Rev O Generated Plan
General Notes:
1 -JL16 Wafer tech code U050FXXD
2 - JL16 BOM: EME6300H-6L Mold Compound, SUMITOMO CRM-1033BF Die Attach Epoxy, 25um Gold Wire
Die Qual Generic data
Revision Comments
FORMPPAP004XLS 6 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 1.0 - Result
Date: May 5, 2011
Technology:
Package: Design Engr: QUARTZ Tracking #: 202620Fab / Assembly
/
Final Test Sites: Product Engr:
(Signature/Date shown below
may be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-10-2011
Die Size (in
mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-10-2011
Part Operating
Temp. Grade: Grade - 40°C to +85 °C Trace/DateCode:
LOT A
8EME005GQ500
CTNAVS1049A
LOT B LOT C CAB Approval
Signature & Date:
09513599M
May-20-2011
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document
otherwise with justification)
TEST @ RH 8EME005GQ500: 0/231 Generic data:
Q208461, 705P6E; 0/231
Q207965, 705JP7: 0/231
Q202063, 908QC16: 0/693
Q207962, 908GR8A: 0/77
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test
(HAST):
PC before HAST (for SMDs only):
Required @ MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5.5V
Timed RO of 48hrs. MAX
TEST @ RH 77 1 77 8EME005GQ500: 0/77 Generic data:
Q208461, 705P6E; 0/77
Q207965, 705JP7: 0/77
Q202063, 908QC16: 0/231
Q207962, 908GR8A: 0/77
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only):
Required @ MSL3, 260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 1 77 8EME005GQ500: 0/77 Generic data:
Q208461, 705P6E; 0/77
Q207965, 705JP7: 0/77
Q202063, 908QC16: 0/231
Q207962, 908GR8A: 0/77
JESD22-
A104
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TEST @ H 77 1 77 8EME005GQ500: 0/77, WP: 0/5, Min>3g Generic data:
Q208461, 705P6E; 0/77
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC
and as required per test conditions.
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
2959.4x3267.2mm Tammie Gause - RA7914/Nancy Long - B07252
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
U050FXXD /85%UDRSST
Pkg Code 2009/28W SOIC Jim Carlquist - RMSD80
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM Tao Ren - B01387
M49Z
0 Ziep Tran - RSJP50/Shong Lee Ming-B21406
Commercial/Industrial Tier Results
Qualification of 85% UDR SST 68HC908JL16 in CHD 68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
TC
A104
AEC Q100-
Appendix 3
PC before TC (for SMDs only): Required
@ MSL3, 260oC
TC = -65°C to 150°C for 500 cycles.
Q208461, 705P6E; 0/77
Q207965, 705JP7: 0/77
Q202063, 908QC16: 0/231
Q207962, 908GR8A: 0/77
PC + PTC
JESD22-
A105
Preconditioning plus Power
Temperature Cycle (PC+PTC):
(See AEC-Q100 for test applicability
criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life
(HTSL):
175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 1 77 8EME005GQ500: 0/77
FORMPPAP004XLS 7 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life
(HTOL):
Ta = 125°C for 168hrs
Bias = 6.0V
(Devices incorporating NVM shall
receive 'NVM endurance preconditioning
(10K W/E @ 125oC)' prior to this test,
and special NVM test sequencing after
this test)
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16 Auto:
0/231@125C, 6V, 1008Hrs
Q205779, JL16: 0/77@125C,
6V, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic Data:
Q202069, QC16: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Flash (Page) W/E Cycling
(125C)+Flash & EE Erased State DRB
@ 150oC for 1008hrs
Devices incorporating NVM shall receive
'NVM endurance preconditioning'(W/E
cycling). Test R, H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005GQ500; 0/5, Cpk>1.67 Performed by Assembly Site
during qual lot builds - PE to
include this requirement in the
qual lot build ERF
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005GQ500; 0/5, Cpk>1.67 Performed by Assembly Site
during qual lot builds - PE to
include this requirement in the
qual lot build ERF
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam
age prior to test.
If production burn-in is done, samples
must also undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site
Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site
Transfer
DIM
Dimensional (DIM):
PPE to verify PD results against valid
DIM: Not Required
BOM: done
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
DIM
&
BOM
PPE to verify PD results against valid
98A drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is
accurate.
BOM: done
SBS
AEC-Q100-
010
Solder Ball Shear (SBS):
Performed on all solder ball mounted
packages e.g. PBGA, Chip Scale, Micro
Lead Frame (but NOT Flip Chip).
Two reflow cycles at MSL reflow
temperature before shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted
packages only; NOT for Flip
Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each
of 5 parts)
0 0
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TDDB
Time Dependent Dielectric
Breakdown (TDDB)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
HCI
Hot Carrier Injection (HCI) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
SM
Stress Migration (SM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
NBTI
Negative Bias Temperature Instability
(NBTI)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 8 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional /
Parametrics (TEST):
For AEC, test software shall meet
requirements of AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit
value.
0 Fails All All All Completed This action refers to Final Testing
of all qualification units.
HBM
AEC-Q100-
002 /
JESD22-
A114E Jan
2007
ElectroStatic Discharge/
Human Body Model Classification
(HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for
classification levels.
TEST @ RH
2KV min.
3 units per Voltage
level
0 0 pass Generic data:
Q205779, JL16 32LQFP Qual :
0/3@500
0/3@1000
0/3@1500V
0/3@2000V
MM
AEC-Q100-
003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for
classification levels.
TEST @ RH
200V min.
3 units per Voltage
level
0 0 pass Generic data:
Q205779, JL16 32LQFP Qual :
0/3@50
0/3@100
0/3@150V
0/3@200V
CDM
AEC-Q100-
011
ElectroStatic Discharge/
Charged Device Model Classification
(CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for
classification levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
1 12 8EME005GQ500:
0/3@250V
0/3@500V
0/3@750V(CP)
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-
Q100-004 requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating
voltage
TEST @ RH 6 0 0 pass Generic data:
Q205779, JL16 32LQFP Qual :
0/6@100mA
ED
AEC-Q100-
009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 5 0 0 Completed Done on JL16 32LQFP Qual
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and
part families per AEC Q003.
GL (for
information
only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate
Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is
performed for information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest;
recovered units are GL failures.
TEST @ R 6 0 0
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test
applicability; done on case-by-case basis
per customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number
202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M
205779 M49Z HC908JL16 85% UDRSST FSL-CHD-FAB 9.54481968 09513599M
28W SOIC Qual Vehicle Info
Quartz# Mask SetProduct-Qual Description/Part
Number (s)
Die Area
(mm2)Assembly Site Pkg Description/code Mold Description EPOXY Description Wire Description
202620 M49Z HC908JL16 9.54481968 TJN 28W SOIC/2009 SUMITOMO EME-G600 DA SUMITOMO CRM-1064MBL 25um Au
208461/212348 M11Z HC705P6E 20.0566 TJN 28W SOIC/2009 SUMITOMO EME-G600 DA SUMITOMO CRM-1064MBL 25um Au
207965 M41Z HC705JP7 22.3561 TJN 28W SOIC/2009 SUMITOMO EME-G600 DA SUMITOMO CRM-1064MBL 25um Au
202063 M80Z HC908QC16 9.61625124 TJN 28W SOIC/2009 SUMITOMO EME-G600 DA SUMITOMO CRM-1064MBL 25um Au
207962 M70Z HC908GR8A
Date Author
4-Aug-09 T. Gause
5-May-11 Nancy LongRev 1.0 Add Qual Result
General Notes:
1 -JL16 Wafer tech code U050FXXD
2 - JL16 BOM: SUMITOMO EME-G600 Mold Compound, SUMITOMO CRM-1064MBL Die Attach Epoxy, 25um Gold Wire
Die Qual Generic data
Revision Comments
Rev O Generated Plan
FORMPPAP004XLS 9 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 22, 2011
Technology:
Package: Design Engr: QUARTZ Tracking #: 205777Fab / Assembly
/
Final Test Sites: Product Engr:
(Signature/Date shown below
may be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-10-2011
Die Size (in
mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-10-2011
Part Operating
Temp. Grade: Grade - 40°C to +85 °C Trace/DateCode:
LOT A
8EME005GGP00
CTNASK1048A
LOT B LOT C CAB Approval
Signature & Date:
09513599M
May-20-2011
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test
(HAST):
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 1 77 8EME005GGP00: 0/77 Generic data:
Q208462, 705P6E: 0/77
Q207970, 705JP7; 0/154
AC
JESD22-
A102
A118
Autoclave (AC):
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 1 77 8EME005GGP00: 0/77 Generic data:
Q208462, 705P6E: 0/77
Q207970, 705JP7; 0/154
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
TC = -65°C to 150°C for 500 cycles.
TEST @ H 77 1 77 8EME005GGP00: 0/77, WP: 0/5, Min>3g Generic data:
Q208462, 705P6E: 0/77
Q207970, 705JP7; 0/154
PC + PTC
JESD22-
A105
Preconditioning plus Power
Temperature Cycle (PC+PTC):
(See AEC-Q100 for test applicability
criteria)
PC before PC+PTC (for SMDs only)
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM Tao Ren - B01387
M49Z
0 Ziep Tran - RSJP50/Shong Lee Ming-B21406
2959.4x3267.2mm Tammie Gause - RA7914/Nancy Long - B07252
Commercial/Industrial Tier Results
Qualification of 85% UDR SST 68HC908JL16 in CHD 68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
U050FXXD /85%UDRSST
Pkg Code 655/28 PDIP Jim Carlquist - RMSD80
PC + PTC PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life
(HTSL):
175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 1 77 8EME005GGP00: 0/80
FORMPPAP004XLS 10 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life
(HTOL):
Ta = 125°C for 168hrs
Bias = 6.0V
(Devices incorporating NVM shall
receive 'NVM endurance preconditioning
(10K W/E @ 125oC)' prior to this test,
and special NVM test sequencing after
this test)
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16 Auto:
0/231@125C, 6V, 1008Hrs
Q205779, JL16: 0/77@125C,
6V, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic Data:
Q202069, QC16: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Flash W/E Cycling (125C)+Flash &
EE Erased State DRB @ 150oC for
1008hrs
Devices incorporating NVM shall receive
'NVM endurance preconditioning'(W/E
cycling). Test R, H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005GGP00: 0/5, Cpk>1.67 Performed by Assembly Site
during qual lot builds - PE to
include this requirement in the
qual lot build ERF
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005GGP00: 0/5, Cpk>1.67 Performed by Assembly Site
during qual lot builds - PE to
include this requirement in the
qual lot build ERF
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam
age prior to test.
If production burn-in is done, samples
must also undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site
Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site
Transfer
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid
98A drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is
accurate.
DIM: Not Required
BOM: Done
SBS
AEC-Q100-
010
Solder Ball Shear (SBS):
Performed on all solder ball mounted
packages e.g. PBGA, Chip Scale, Micro
Lead Frame (but NOT Flip Chip).
Two reflow cycles at MSL reflow
temperature before shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted
packages only; NOT for Flip
Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each
of 5 parts)
0 0
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TDDB
Time Dependent Dielectric
Breakdown (TDDB)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
HCI
Hot Carrier Injection (HCI) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
SM
Stress Migration (SM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
NBTI
Negative Bias Temperature Instability
(NBTI)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 11 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
68HC908JL16
"JL16"
Name or "Varies"
PB or "Varies"
Stress Test Reference Test ConditionsEnd Point
Requirements
Minimum Sample
Size# of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional /
Parametrics (TEST):
For AEC, test software shall meet
requirements of AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit
value.
0 Fails All All All Completed This action refers to Final Testing
of all qualification units.
HBM
AEC-Q100-
002 /
JESD22-
A114E Jan
2007
ElectroStatic Discharge/
Human Body Model Classification
(HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for
classification levels.
TEST @ RH
2KV min.
3 units per Voltage
level
0 0 pass Generic data:
Q205779, JL16 32LQFP Qual :
0/3@500
0/3@1000
0/3@1500V
0/3@2000V
MM
AEC-Q100-
003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for
classification levels.
TEST @ RH
200V min.
3 units per Voltage
level
0 0 pass Generic data:
Q205779, JL16 32LQFP Qual :
0/3@50
0/3@100
0/3@150V
0/3@200V
CDM
AEC-Q100-
011
ElectroStatic Discharge/
Charged Device Model Classification
(CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for
classification levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage
level
1 9 8EME005GGP00:
0/3@250V
0/3@500V
0/3@750V(CP)
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-
Q100-004 requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating
voltage
TEST @ RH 6 0 0 pass Generic data:
Q205779, JL16 32LQFP Qual :
0/6@100mA
ED
AEC-Q100-
009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC AEC: 30 0 0 Completed Done on JL16 32LQFP Qual
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and
part families per AEC Q003.
GL (for
information
only)
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate
Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is
performed for information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest;
recovered units are GL failures.
TEST @ R 6 0 0
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test
applicability; done on case-by-case basis
per customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number
202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M
205779 M49Z HC908JL16 85% UDRSST FSL-CHD-FAB 9.54481968 09513599M
28 PDIP Qual Vehicle Info
Quartz# Mask SetProduct-Qual Description/Part
Number (s)
Die Area
(mm2)Assembly Site Pkg Description/code Mold Description EPOXY Description Wire Description
205777 M49Z HC908JL16 9.54481968 TJN 28 PDIP/655 MC SUMITOMO EME-6300HXLD/ATCH SMTM CRM-1033B 25um Au
208462 M11Z HC705P6E 20.0566 TJN 28 PDIP/655 MC SUMITOMO EME-6300HXLD/ATCH SMTM CRM-1033B 25um Au
207970 M41Z HC705JP7 22.3561 TJN 28 PDIP/655 MC SUMITOMO EME-6300HXLD/ATCH SMTM CRM-1033B 25um Au
Date Author
4-Aug-09 T. Gause
17-Sep-09 T. Gause
22-Apr-11 NancyLRev 3.0 add qual result
Die Qual Generic data
Revision Comments
Rev O Generated Plan
Rev 1.0 Replaced EDR stress with HTSL based on generic data that will be obtained from QC16 that has the same flash array.
General Notes:
1 -JL16 Wafer tech code U050FXXD
2 - JL16 BOM: SUMITOMO EME-6300HXL Mold Compound, SMTM CRM-1033B Die Attach Epoxy, 25um Gold Wire
FORMPPAP004XLS 12 of 12 Freescale Rev T
or 10% or 10%
(0M49Z) Electrical DistributionReport Date: 16/May/11Report Revision: 0
Per AEC Q100 Rev G, ED Appendix Rev B; any key datasheet parameter with Cpk < 1.67 will require justification and FSL NPI Quality approval.
Hot CHD Devices Pre HTOL SND Devices Pre HTOL CHD Devices Post HTOL SND Devices Post HTOL
Pre CHD mean+-1
SND sigma or +-10%
Post CHD mean+-1
SND sigma or +-10%
Comment
85C 85C 85C 85C
Parameter Name in Datasheet UnitsLower Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk
LVI_TRIP V 3.9 4.5 4.18 0.0434 2.1634 4.19 0.051368 1.8559 4.19 0.051 1.751 4.187 0.0522 1.943 PASS PASSLVI_RECOVER V 4 4.6 4.32 0.04523 2.0805 4.33 0.04693 1.9106 4.32467 0.05847 1.839 4.33 0.0468 2.013 PASS PASS
RIDD_HV mA 0 18 11.2702 0.0865 25.9291 11.5116 0.1406 15.3774 11.92 0.8 21.894 11.54 0.165 14.32 PASS PASSRIDD_LV mA 0 10 3.4703 0.023 50.3371 3.5255 0.0392 29.9817 3.51 0.127 9.635 3.55 0.073 18.36 PASS PASSWIDD_HV mA 0 10 5.0033 0.0608 21.6495 5.1097 0.0982 16.5993 4.95 0.025 62.34 5.11 0.098 16.52 PASS PASSWIDD_LV mA 0 7 1.3577 0.016 28.18 1.3838 0.0212 21.68 1.367 0.063 7.09 1.38 0.021 22.2 PASS PASS
SIDD_LVI_EN_HV uA 0 220 150.4557 3.28 7.06 152.68 4.25 5.28 145.08 3.48 8.03 153.4 4.73 4.39 PASS PASSSIDD_LVI_EN_LV uA 0 200 130.27 3.73 6.24 132.45 4.35 5.18 124.58 3.92 6.37 132.5 4.33 5.23 PASS PASS
PortD_A_PULL_UP_HV KΩ 16 32 25.95 1.05 6.48 25.94 1.31 5.2 25.7 0.95 8.31 26.2 1.36 4.73 PASS PASSPortD_A_PULL_UP_LV KΩ 16 32 26.3 0.72 4.16 26.3 0.75 3.96 25.8 1.165 4.71 26.6 0.74 3.57 PASS PASS
IRST_PULL_UP_HV KΩ 16 32 26.8 2.59 4.4 26.6 2.89 4.07 26.4 1.53 10.07 26.6 2.68 4.48 PASS PASSIRST_PULL_UP_LV KΩ 16 32 29.3 1.14 2.39 29.2 1.22 2.31 29.2 1.14 2.68 29.1 1.27 2.24 PASS PASS
Room CHD Devices Pre HTOL SND Devices Pre HTOL CHD Devices Post HTOL SND Devices Post HTOL
Pre CHD mean+-1
SND sigma or +-10%
Post CHD mean+-1
SND sigma or +-10%
Comment
25C 25C 25C 25C
Parameter Name in Datasheet Units Low Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std CpkLVI_TRIP V 3.9 4.5 4.18 0.0406 2.2765 4.17 0.065 1.8047 4.196 0.0572 1.831 4.176 0.0655 2.012 PASS PASS
LVI_RECOVER V 4 4.6 4.3 0.043 2.2895 4.31 0.055 1.9122 4.3236 0.05786 1.745 4.31 0.059 2.17 PASS PASSRIDD_HV mA 0 18 11.1954 0.0869 26.097 11.3725 0.1427 15.4781 11.14 0.069 36.26 11.38 0.146 14.38 PASS PASSRIDD_LV mA 0 10 3.4369 0.0239 47.9581 3.4658 0.04753 24.3024 3.41 0.034 38.7 3.467 0.047 22.73 PASS PASSWIDD_HV mA 0 10 4.9309 0.06271 26.2094 5.0242 0.0766 21.6494 4.92 0.0435 36.78 5.02 0.076 20.52 PASS PASSWIDD_LV mA 0 7 1.322 0.0153 28.67 1.336 0.0296 15.04 1.3 0.0165 27.91 1.339 0.03 13.4 PASS PASS
SIDD_LVI_EN_HV uA 0 220 145.96 3.66 6.73 146.6 4.35 5.63 144.66 3.24 9.74 146.68 4.26 6.115 PASS PASSSIDD_LVI_EN_LV uA 0 200 124.88 3.86 6.49 125.06 4.68 5.34 124.16 3.78 6.67 125.2 4.78 5.83 PASS PASS
PortD_A_PULL_UP_HV KΩ 16 32 25.3 0.9 8.5 25.65 1.73 17.38 25.3 1.22 7.6 26.5 1.63 6.12 PASS PASSPortD_A_PULL_UP_LV KΩ 16 32 25.6 0.495 6.93 25.9 0.63 5.19 25.5 0.59 6.39 25.7 0.75 6.06 PASS PASS
IRST_PULL_UP_HV KΩ 16 32 26.2 1.96 6.53 26.2 2.46 5.23 26.3 1.47 9.68 26.2 2.35 5.33 PASS PASSIRST_PULL_UP_LV KΩ 16 32 28.6 0.84 4.13 28.6 1.07 3.2 28.7 0.628 6.13 28.6 0.933 2.68 PASS PASS
Cold CHD Devices Pre HTOL SND Devices Pre HTOL CHD Devices Post HTOL SND Devices Post HTOL
Pre CHD mean+-1
SND sigma or +-10% +-
Post CHD mean+-1
SND sigma or +-10% +-
Comment
-40C -40C -40C -40C
Parameter Name in Datasheet Units Low Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std CpkLVI_TRIP V 3.9 4.5 4.18 0.0413 2.2517 4.19 0.048 1.9955 4.198 0.0558 1.863 4.19 0.0486 1.91 PASS PASS
LVI_RECOVER V 4 4.6 4.31 0.0419 2.3459 4.32 0.0494 1.9105 4.323 0.0571 1.752 4.317 0.0488 1.91 PASS PASSRIDD_HV mA 0 18 11.2507 0.0831 27.0697 11.4268 0.1348 16.2561 11.24 0.19 10.53 11.45 0.158 16.97 PASS PASSRIDD_LV mA 0 10 3.4436 0.0188 60.8027 3.4856 0.0391 29.6955 3.41 0.032 31.78 3.489 0.046 28.64 PASS PASSWIDD_HV mA 0 10 5.0047 0.0673 24.7309 5.0507 0.0956 17.2434 4.926 0.043 37.37 5.05 0.096 18.37 PASS PASSWIDD_LV mA 0 7 1.327 0.0148 29.81 1.3374 0.0207 21.5 1.307 0.017 7.09 1.34 0.0236 22.54 PASS PASS
SIDD_LVI_EN_HV uA 0 220 144.15 3.78 6.69 145.24 5.08 4.91 144.87 3.21 9.02 145.3 5.03 4.69 PASS PASSSIDD_LVI_EN_LV uA 0 200 122.59 4.11 6.28 123.52 5.21 4.89 124.56 3.46 8.28 123.54 5.2 3.29 PASS PASS
PortD_A_PULL_UP_HV KΩ 16 32 25.4 0.96 7.92 25.5 1.27 5.87 25.3 1.23 6.32 25.8 2.02 4.39 PASS PASSPortD_A_PULL_UP_LV KΩ 16 32 25.7 0.54 6.25 25.8 0.68 4.91 25.5 0.58 9.81 26.1 0.99 3.99 PASS PASS
IRST_PULL_UP_HV KΩ 16 32 26.1 1.99 6.59 25.65 3.55 4.06 26.3 1.49 8.42 25.7 3.69 4.83 PASS PASSIRST_PULL_UP_LV KΩ 16 32 28.5 0.934 3.83 28 1.45 2.83 28.7 0.6 5.22 28 1.48 3.46 PASS PASS
Qualification Results for the FAB Site Transfer
From Freescale Sendai FabTo Freescale Chandler Fab
For HC908QB8FSL-CHD- Fab/Mask M81Z
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 23, 2011
Technology:
Package: Design Engr: QUARTZ Tracking #: 203737(Die)/206298
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below
may be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-12-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-12-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT A
8EME005HRV00
CTNAQB1050A
LOT B
8EME005HRV01
CTNAQB1050A
LOT C
8EME005HRV02
CTNAQB1050A
CAB Approval
Signature & Date: 10010064M
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document
otherwise with justification)
TEST @ RH All surface mount devices
prior to THB, HAST, AC,
UHST, TC, PC+PTC and as
required per test conditions.
ME005HRV00: 0/77
ME005HRV01 : 0/77
ME005HRV02 : 0/77
Generic data:
Q202065, QC16: 0/693
Q203722, QY4: 0/693
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only):
Required @ MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Generic data:
Q202065, QC16: 0/231
Q203722, QY4: 0/231
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required
@ MSL3, 260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Generic data:
Q202065, QC16: 0/231
Q203722, QY4: 0/231
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
For AEC only: WBP after TC on 5 devices
from 1 lot; 2 bonds per corner and one mid-
bond per side on each device. Record
which pins were used.
TEST @ H
For AEC: WBP =/> 3
grams
77 3 231 ME005HRV00: 0/77, WP: 0/5, Min>3g
ME005HRV01 : 0/77
ME005HRV02 : 0/77
Qualification of 85% UDRSST 68HC908QB8 in FSL-CHD-FAB 68HC908QB8
"QB8"
AEC-Q100F Qual Results
U050FXXD /85%UDRSST
2003 /SOIC 16W
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM
Jim Carlquist - RMSD80
"Varies"
"Varies"
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
Jia Qing - B18837
Ziep Tran - RSJP50
Tammie Gause - RA7914/Nancy Long - B07252
0M81Z
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
2.64x2.74
PC + PTC
JESD22-
A105
Preconditioning plus Power
Temperature Cycle (PC+PTC):
(See AEC-Q100 for test applicability
criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 1 77 ME005HRV00 : 0/77
FORMPPAP004XLS 1 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 23, 2011
68HC908QB8
"QB8"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life
(HTOL):
10k Flash W/E Cycling (125oC) + 1008 hrs
(AEC MC Rd Pt.)
Bias = 6V
Devices incorporating NVM shall receive
'NVM endurance preconditioning' prior to
this test, and special NVM test sequencing
after this test.
Timed RO of 96hrs. MAX
TEST @ RHC 77 1 77 8EME005HRV00: 0/77 Generic Data:
Q202069, QC16: 0/231
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic Data:
Q202069, QC16: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K W/E Cycling (125C)+Flash DRB @
150oC for 1008hrs
Devices incorporating NVM shall receive
'NVM endurance preconditioning'(W/E
cycling). Test R, H, C after W/E cycling.
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotB: 0/5, Cpk>1.67 Performed by Assembly Site
during qual lot builds - PE to
include this requirement in the
qual lot build ERF
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotB: 0/5, Cpk>1.67 Performed by Assembly Site
during qual lot builds - PE to
include this requirement in the
qual lot build ERF
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age
prior to test.
If production burn-in is done, samples must
also undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site
Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site
Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A
drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is
accurate.
DIM: Not Required
BOM: done
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
accurate.
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted
packages e.g. PBGA, Chip Scale, Micro
Lead Frame (but NOT Flip Chip).
Two reflow cycles at MSL reflow
temperature before shear.
Cpk = or >1.67 10
(5 balls from a min. of 10
devices)
0 0 For solder ball mounted
packages only; NOT for Flip
Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each of 5
parts)
0 0
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TDDB
Time Dependent Dielectric Breakdown
(TDDB)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
HCI
Hot Carrier Injection (HCI) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
SM
Stress Migration (SM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
NBTI
Negative Bias Temperature Instability
(NBTI)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 2 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 23, 2011
68HC908QB8
"QB8"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics
(TEST):
For AEC, test software shall meet
requirements of AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing
of all qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification
(HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for
classification levels.
TEST @ RH
2KV min.
3 units per Voltage level 1 12 LotA:
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/150/200 Volts
For AEC, see AEC-Q100-003 for
classification levels.
TEST @ RH
200V min.
3 units per Voltage level 1 12 LotA:
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification
(CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for
classification levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage level 1 9 LotA:
0/3@250V
0/3@500V
0/3@750V(CP)
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-
Q100-004 requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating
voltage
TEST @ RH 6 1 6 LotA: 0/6
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 30 1 30 LotA: 0/30, Cpk>1.67
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and
part families per AEC Q003.
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate
Leakage (GL):
155°C, 2.0 min, +400/-400 V
TEST @ R 6 1 6 LotA; 0/6
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
GL (for
information
only)
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is
performed for information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest;
recovered units are GL failures.
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test
applicability; done on case-by-case basis
per customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1 0 0
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number
202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M
Quartz# Mask SetProduct-Qual Description/Part Number
(s)
Die Area
(mm2)Assembly Site Pkg Description/code Mold Description EPOXY Description Wire Description
202065 M80Z HC908QC16 9.61625124 FSL-TJN-FM SOIC 16 W/2003 SUMITOMO G600 ABLEBOND 8290 25 um Au
203722 M05Z HC908QY4 7.3136949 FSL-TJN-FM SOIC 16 W/2003 SUMITOMO G600 ABLEBOND 8290 25 um Au
Date Author
25-Aug-09 T. Gause
26-Aug-09 T. Gause
23-Apr-11 Nancy LongRev 2.0 Add Qual Result
Die Qual Vehicles
16 SOIC Pkg Qual Vehicles
Rev 1.0 Reviewed qual plan with H.P. Wang - TJN Reliability, PE and PM team.
General Notes:
1 -QB8 Wafer tech code U050FXXD
2 - QB8 BOM: SUMITOMO G600 Mold Compound, ABLEBOND 8290 Die Attach Epoxy, 25um Gold Wire
Revision Comments
Rev O Generated Plan
FORMPPAP004XLS 3 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 23, 2011
68HC908QB8
"QB8"
"Varies"
"Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 23, 2011
Technology:
Package: Design Engr: QUARTZ Tracking #: 204137
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below
may be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-12-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-12-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
8EME005FZ300
4BTVA1052 LOT B LOT C CAB Approval
Signature & Date: 10010064M
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document
otherwise with justification)
TEST @ RH LJME005FZ300: 0/77 Generic Data:
Q202067, QC16: 0/693
Q203721, QY4(Nitron Classic):
0/693
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only):
Required @ MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Generic Data:
Q202067, QC16: 0/231
Q203721, QY4(Nitron Classic):
0/231
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required
@ MSL3, 260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Generic Data:
Q202067, QC16: 0/231
Q203721, Nitron Classic: 0/231
JESD22-
A104
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TEST @ H
For AEC: WBP =/> 3
77 1 77 LJME005FZ300: 0/77, WP: 0/5, min>3g Generic Data:
Q202067, QC16: 0/231, WP: 0/5
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC and as
required per test conditions.
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM Jia Qing - B18837
0M81Z Ziep Tran - RSJP50
2.64x2.74 Tammie Gause - RA7914/Nancy Long - B07252
AEC-Q100F Qual Results
Qualification of 85% UDRSST 68HC908QB8 in FSL-CHD-FAB 68HC908QB8
"QB8"
"Varies"
"Varies"
U050FXXD /85%UDRSST
6117 /TSSOP Jim Carlquist - RMSD80
TC
A104
AEC Q100-
Appendix 3
PC before TC (for SMDs only): Required
@ MSL3, 260oC
TC = -65°C to 150°C for 500 cycles.
For AEC only: WBP after TC on 5 devices
from 1 lot; 2 bonds per corner and one mid-
bond per side on each device. Record
which pins were used.
For AEC: WBP =/> 3
grams
Q202067, QC16: 0/231, WP: 0/5
Q203721, QY4(Nitron Classic):
0/231, WP: 0/5
PC + PTC
JESD22-
A105
Preconditioning plus Power
Temperature Cycle (PC+PTC):
(See AEC-Q100 for test applicability
criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
150°C for 1000 hrs or 175oC for 500 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 0 0 pass Generic Data:
Q202069, Nitron QC16, EDR:
0/231@150C, 1008Hrs
Q203721, Nitron Classic:
0/77@175C, 504Hrs
FORMPPAP004XLS 4 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 23, 2011
68HC908QB8
"QB8"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life
(HTOL):
10k Flash W/E Cycling (125oC) + HTOL
Ta = 125°C for 1008 hrs
Bias = 6V
Devices incorporating NVM shall receive
'NVM endurance preconditioning' prior to
this test, and special NVM test sequencing
after this test.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231
Q203737, QB8: 0/77
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic Data:
Q202069, QC16: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Flash W/E Cycling (125C)+Flash DRB
@ 150oC for 1008hrs
Devices incorporating NVM shall receive
'NVM endurance preconditioning'(W/E
cycling). Test R, H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LJME005FZ300: 0/5, Cpk>1.67 Performed by Assembly Site
during qual lot builds - PE to
include this requirement in the
qual lot build ERF
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LJME005FZ300: 0/5, Cpk>1.67 Performed by Assembly Site
during qual lot builds - PE to
include this requirement in the
qual lot build ERF
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age
prior to test.
If production burn-in is done, samples must
also undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site
Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site
Transfer
DIM
&
Dimensional (DIM):
PPE to verify PD results against valid 98A
drawing.
DIM: Not Required
BOM: Done
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
&
BOM BOM Verification (BOM):
PPE to verify qual lot ERF BOM is
accurate.
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted
packages e.g. PBGA, Chip Scale, Micro
Lead Frame (but NOT Flip Chip).
Two reflow cycles at MSL reflow
temperature before shear.
Cpk = or >1.67 10
(5 balls from a min. of 10
devices)
0 0 For solder ball mounted
packages only; NOT for Flip
Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each of 5
parts)
0 0
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TDDB
Time Dependent Dielectric Breakdown
(TDDB)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
HCI
Hot Carrier Injection (HCI) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
SM
Stress Migration (SM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
NBTI
Negative Bias Temperature Instability
(NBTI)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 5 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 23, 2011
68HC908QB8
"QB8"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics
(TEST):
For AEC, test software shall meet
requirements of AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing
of all qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification
(HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for
classification levels.
TEST @ RH
2KV min.
3 units per Voltage level 0 0 pass Generic Data:
Q203737, QB8(SOIC16):
0/3@500
0/3@1000
0/3@1500
0/3@2000
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for
classification levels.
TEST @ RH
200V min.
3 units per Voltage level 0 0 pass Generic Data:
Q203737, QB8(SOIC16):
0/3@50
0/3@100
0/3@150
0/3@200
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification
(CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for
classification levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage level 1 9 LotA:
0/3@250V
0/3@500V
0/3@750V(CP)
Levels below 500V for all other
pins require customer approval.
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-
Q100-004 requirements for AEC.
Ta= 125oC
Vsupply = TBDV Maximum operating
voltage
TEST @ RH 6 0 0 pass Generic Data:
Q203737, QB8(SOIC16):
0/6@100mA
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 5 0 0 Completed Done on QB8 SOIC16 W
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and
part families per AEC Q003.
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate
Leakage (GL):
TEST @ R 6 1 6 LJME005FZ300: 0/6
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
GL (for
information
only)
Q100-006 Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is
performed for information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest;
recovered units are GL failures.
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test
applicability; done on case-by-case basis
per customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1 0 0
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number
202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M
203737 M81Z HC908QB8 85% UDRSST FSL-CHD-FAB 7.2336 10010064M
Quartz# Mask SetProduct-Qual Description/Part Number
(s)
Die Area
(mm2)Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
202067 M80Z HC908QC16 9.61625124 FSL-TJN-FM TSSOP 16/6117 G700K ABLEBOND 8290 25 um Au
203721 M05Z HC908QY4(Nitron Classic) 7.3136949 FSL-TJN-FM TSSOP 16/6117 G700K ABLEBOND 8290 25 um Au
Revision Date Author
Rev O 25-Aug-09 T. Gause
Rev 1.0 26-Aug-09 T. Gause
Rev 2.0 23-Apr-11 Nancy Long
Die Qual Vehicles
16 TSSOP Pkg Qual Vehicles
Comments
General Notes:
1 -QB8 Wafer tech code U050FXXD
2 - QB8 BOM: SUMITOMO G700K Mold Compound, ABLEBOND 8290 Die Attach Epoxy, 25um Gold Wire
Generated Plan
Reviewed qual plan with H.P. Wang - TJN Reliability, PE and PM team.
Add Qual Result
FORMPPAP004XLS 6 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 23, 2011
68HC908QB8
"QB8"
"Varies"
"Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev A - Result
Date: May 5, 2011
Technology:
Package: Design Engr: QUARTZ Tracking #: NA
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below
may be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-12-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-12-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT A LOT B LOT C CAB Approval
Signature & Date: 10010064M
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document
otherwise with justification)
TEST @ RH pass Generic data:
Q202065, QC16: 0/693
Q203722, QY4: 0/693
Q206298, QB8: 0/231
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only):
Required @ MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Generic data:
Q202065, QC16: 0/231
Q203722, QY4: 0/231
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required
@ MSL3, 260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Q202065, QC16: 0/231
Q203722, QY4: 0/231
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
TEST @ H 77 0 0 pass Generic data:
Q206298, QB8 16TSSOP Auto:
0/231, WP: 0/5, min>3g
PC + PTC
JESD22-
A105
Preconditioning plus Power
Temperature Cycle (PC+PTC):
(See AEC-Q100 for test applicability
criteria)
PC before PC+PTC (for SMDs only)
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC and as
required per test conditions.
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM Jia Qing - B18837
0M81Z Ziep Tran - RSJP50
2.64x2.74 Tammie Gause - RA7914/Nancy Long - B07252
Commercial/Industrial Qual Results
Qualification of 85% UDRSST 68HC908QB8 in FSL-CHD-FAB 68HC908QB8
"QB8"
"Varies"
"Varies"
U050FXXD /85%UDRSST
2003 /SOIC 16W Jim Carlquist - RMSD80
PC + PTCPC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
PTC
JESD22-
A105
Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 0 0 pass Q206298, QB8: 0/77
FORMPPAP004XLS 7 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 23, 2011
68HC908QB8
"QB8"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life
(HTOL):
10k Flash W/E Cycling (125oC) + HTOL
Ta = 125°C for 1008 hrs
Bias = 6V
Devices incorporating NVM shall receive
'NVM endurance preconditioning' prior to
this test, and special NVM test sequencing
after this test.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231
Q203737, QB8: 0/77
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic Data:
Q202069, QC16: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Flash W/E Cycling (125C)+Flash @
150oC for 1008hrs
Devices incorporating NVM shall receive
'NVM endurance preconditioning'(W/E
cycling). Test R, H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
0 0 pass QB8 SOIC16 W Auto Qual: 0/5,
Cpk=3.89
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
0 0 pass QB8 SOIC16 W Auto Qual: 0/6,
Cpk=3.35
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age
prior to test.
If production burn-in is done, samples must
also undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site
Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site
Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A
drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is
DIM: Not Required
BOM: done
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
BOMPPE to verify qual lot ERF BOM is
accurate.
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted
packages e.g. PBGA, Chip Scale, Micro
Lead Frame (but NOT Flip Chip).
Two reflow cycles at MSL reflow
temperature before shear.
Cpk = or >1.67 10
(5 balls from a min. of 10
devices)
0 0 For solder ball mounted
packages only; NOT for Flip
Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each of 5
parts)
0 0
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TDDB
Time Dependent Dielectric Breakdown
(TDDB)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
HCI
Hot Carrier Injection (HCI) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
SM
Stress Migration (SM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
NBTI
Negative Bias Temperature Instability
(NBTI)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 8 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 23, 2011
68HC908QB8
"QB8"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics
(TEST):
For AEC, test software shall meet
requirements of AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing
of all qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification
(HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for
classification levels.
TEST @ RH
2KV min.
3 units per Voltage level 0 0 pass Generic Data:
Q203737, QB8(SOIC16):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for
classification levels.
TEST @ RH
200V min.
3 units per Voltage level 0 0 pass Generic Data:
Q203737, QB8(SOIC16):
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification
(CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for
classification levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage level 0 0 pass Generic data
Q203737, QB8(SOIC16 W)
0/3@250V
0/3@500V
0/3@750V
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-
Q100-004 requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating
voltage
TEST @ RH 6 0 0 pass Generic Data:
Q203737, QB8(SOIC16): 0/6
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC AEC: 30 0 0 completed Done on QB8 SOIC16 W
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and
part families per AEC Q003.
GL (for
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate
Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is
TEST @ R 6 0 0
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
GL (for
information
only)
Per AEC Q100 Rev G, this test is
performed for information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest;
recovered units are GL failures.
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test
applicability; done on case-by-case basis
per customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1 0 0
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number CAB Date
202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M
203737 M81Z HC908QB8 85% UDRSST FSL-CHD-FAB 7.1264 10010064M
Quartz# Mask SetProduct-Qual Description/Part Number
(s)
Die Area
(mm2)Assembly Site Pkg Description/code Mold Description EPOXY Description Wire Description
202065 M80Z HC908QC16 9.61625124 FSL-TJN-FM SOIC 16 W/2003 SUMITOMO G600 ABLEBOND 8290 25 um Au
203722 M05Z HC908QY4 7.3136949 FSL-TJN-FM SOIC 16 W/2003 SUMITOMO G600 ABLEBOND 8290 25 um Au
206298 M81Z HC908QB8_AUTO 7.126662 FSL-TJN-FM SOIC 16 W/2003 SUMITOMO G600 ABLEBOND 8290 25 um Au
Date Author
4 Nov. 2009 T. Gause
5 May. 2011 Nancy LongRev A Update the result
General Notes:
1 -QB8 Wafer tech code U050FXXD
2 - QB8 BOM: SUMITOMO G600 Mold Compound, ABLEBOND 8290 Die Attach Epoxy, 25um Gold Wire
Die Qual Vehicles
16 SOIC Pkg Qual Vehicles
Revision Comments
Rev O Generated standalone No BI qual plan.
FORMPPAP004XLS 9 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 23, 2011
68HC908QB8
"QB8"
"Varies"
"Varies"
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev A - Result
Date: May 5, 2011
Technology:
Package: Design Engr: QUARTZ Tracking #: NA
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below
may be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-12-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-12-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT A LOT B LOT C CAB Approval
Signature & Date: 10010064M
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document
otherwise with justification)
TEST @ RH pass Generic Data:
Q202067, QC16: 0/693
Q203721, QY4(Nitron Classic):
0/693
Q204137, QB8: 0/77
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only):
Required @ MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Generic Data:
Q202067, QC16: 0/231
Q203721, QY4(Nitron Classic):
0/231
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required
@ MSL3, 260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Generic Data:
Q202067, QC16: 0/231
Q203721, QY4(Nitron Classic):
0/231
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
@ MSL3, 260°C
TC = -65°C to 150°C for 500 cycles.
TEST @ H 77 0 0 pass Generic Data:
Q202067, QC16: 0/231, WP: 0/5
Q203721, QY4(Nitron Classic):
0/231, WP: 0/5
Q204137, QB8: 0/77, WP: 0/5
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC and as
required per test conditions.
2.64x2.74 Tammie Gause - RA7914/Nancy Long - B07252
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
U050FXXD /85%UDRSST
6117 /TSSOP16 Jim Carlquist - RMSD80
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM Jia Qing - B18837
0M81Z Ziep Tran - RSJP50
Commercial/Industrial Qual Results
Qualification of 85% UDRSST 68HC908QB8 in FSL-CHD-FAB 68HC908QB8
"QB8"
"Varies"
"Varies"
HTSL
JESD22-
A103
High Temperature Storage Life (HTSL):
150°C for 168hrs, 504hrs and 1000 hrs
and/or 175oC for 168hrs and 500 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 0 0 pass Generic Data:
Q202069, Nitron QC16, EDR:
0/231@150C, 1008Hrs
Q203721, QY4(Nitron Classic):
0/77@175C, 504Hrs
FORMPPAP004XLS 10 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 23, 2011
68HC908QB8
"QB8"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108
High Temperature Operating Life
(HTOL):
10k Flash W/E Cycling (125oC) + HTOL
Ta = 125°C for 1008 hrs
Bias = 6V
Devices incorporating NVM shall receive
'NVM endurance preconditioning' prior to
this test, and special NVM test sequencing
after this test.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231
Q203737, QB8: 0/77
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic Data:
Q202069, QC16: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Flash W/E Cycling (125C)+Flash DRB
@ 150oC for 1008hrs
Devices incorporating NVM shall receive
'NVM endurance preconditioning'(W/E
cycling). Test R, H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
0 0 pass QB8 TSSOP16 Auto Qual: 0/5,
Cpk=4.02
WBP
MilStd883-
2011
Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
0 0 pass QB8 TSSOP16 Auto Qual: 0/5,
Cpk=3.07
SD
JESD22-
B102
Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age
prior to test.
If production burn-in is done, samples must
also undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site
Transfer
PD
JESD22-
B100
Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site
Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A
drawing.
BOM Verification (BOM):
DIM: Not Required
BOM: Done
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
BOM BOM Verification (BOM):
PPE to verify qual lot ERF BOM is
accurate.
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted
packages e.g. PBGA, Chip Scale, Micro
Lead Frame (but NOT Flip Chip).
Two reflow cycles at MSL reflow
temperature before shear.
Cpk = or >1.67 10
(5 balls from a min. of 10
devices)
0 0 For solder ball mounted
packages only; NOT for Flip
Chips.
LI
JESD22-
B105
Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each of 5
parts)
0 0
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TDDB
Time Dependent Dielectric Breakdown
(TDDB)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
HCI
Hot Carrier Injection (HCI) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
SM
Stress Migration (SM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
NBTI
Negative Bias Temperature Instability
(NBTI)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 11 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: Apr 23, 2011
68HC908QB8
"QB8"
"Varies"
"Varies"
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics
(TEST):
For AEC, test software shall meet
requirements of AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing
of all qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification
(HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for
classification levels.
TEST @ RH
2KV min.
3 units per Voltage level 0 0 pass Generic Data:
Q203737, QB8(SOIC16):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22
ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for
classification levels.
TEST @ RH
200V min.
3 units per Voltage level 0 0 pass Generic Data:
Q203737, QB8(SOIC16):
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification
(CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for
classification levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage level 0 0 pass Generic Data:
Q204137: QB8 Auto(TSSOP16)
0/3@250V
0/3@500V
0/3@750V
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-
Q100-004 requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating
voltage
TEST @ RH 6 0 0 pass Generic Data:
Q203737, QB8(SOIC16):
0/6@100mA
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC AEC: 30 0 0 completed Done on QB8 SOIC16 W
FG
For AEC, AEC-
Q100-007
Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003
Characterization (CHAR):
Ony performed on new technologies and
part families per AEC Q003.
For AEC, AEC-
Q100-006
Electro-Thermally Induced Gate
Leakage (GL):
155°C, 2.0 min, +400/-400 V
TEST @ R 6 0 0
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
GL (for
information
only)
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is
performed for information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest;
recovered units are GL failures.
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test
applicability; done on case-by-case basis
per customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1 0 0
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number CAB Date
202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M
203737 M81Z HC908QB8 85% UDRSST FSL-CHD-FAB 7.2336 10010064M
Quartz# Mask Set Product-Qual Description/Part Number (s) Die Area
(mm2)
Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
202067 M80Z HC908QC16 9.61625124 FSL-TJN-FM TSSOP 16/6117 G700K ABLEBOND 8290 25 um Au
203721 M05Z HC908QY4(Nitron Classic) 7.3136949 FSL-TJN-FM TSSOP 16/6117 G700K ABLEBOND 8290 25 um Au
204137 M81Z HC908QB8_AUTO 7.126662 FSL-TJN-FM TSSOP 16/6117 G700K ABLEBOND 8290 25 um Au
Date Author
4 Nov. 2009 T. Gause
5 May. 2011 Nancy Long
Rev O Generated standalone No BI qual plan.
Rev A Update the result
General Notes:
1 -QB8 Wafer tech code U050FXXD
2 - QB8 BOM: SUMITOMO G700K Mold Compound, ABLEBOND 8290 Die Attach Epoxy, 25um Gold Wire
Die Qual Vehicles
16 TSSOP Pkg Qual Vehicles
Revision Comments
FORMPPAP004XLS 12 of 12 Freescale Rev T
(Nitron 0M81Z) Electrical DistributionPer AEC Q100 Rev G, ED Appendix Rev B; any key datasheet parameter with Cpk < 1.67 will require justification and FSL NPI Quality approval.
Room
Parameter Name in Datasheet Units Lower Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpkidd_run_5v mA 0 10 4.87247 0.0504723 33.86 4.83073 0.03289 32.12 4.89585 0.0595413 28.57 5.00769 0.03272 50.8528 PASS PASSidd_run_3v mA 0 5 2.50824 0.0195152 42.56 2.52136 0.02202 38.07 2.51257 0.0292038 28.39 2.59781 0.01613 49.6391 PASS PASSidd_wait_3v mA 0 1 0.862396 0.0145848 3.14 0.905 0.01448 20.83 0.850752 0.0110601 4.5 0.91749 0.0094 6.47405 PASS PASSidd_wait_5v mA 0 2 1.40326 0.0185992 10.69 1.4523 0.01544 11.82 1.41143 0.0214279 9.16 1.50746 0.01165 14.0916 PASS PASSidd_stop_MTemp_3v uA 0 0.8 0.28486 0.0946082 3.62 0.27911 0.08438 2.06 0.299154 0.114796 3.19 0.24141 0.04204 1.8964 PASS PASSidd_stop_MTemp_5v uA 0 1 0.390223 0.0944096 4.91 0.35938 0.0068 1.76 0.346032 0.16199 3.86 0.33397 0.035 3.1804 PASS PASS
Hot
Parameter Name in Datasheet Units Low Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpkidd_run_5v mA 0 10 4.96145 0.0395531 42.46 5.01219 0.05758 28.87 4.96976 0.458462 36.57 5.13744 0.05261 30.811 PASS PASSidd_run_3v mA 0 5 2.61336 0.0270699 29.39 2.67104 0.02959 26.24 2.60613 0.0224923 35.48 2.69537 0.02612 29.4091 PASS PASSidd_wait_3v mA 0 1.2 0.522205 0.0123645 18.27 0.56162 0.01423 13.16 0.523355 0.0115446 19.54 0.54885 0.11245 16.3371 PASS PASSidd_wait_5v mA 0 2 1.47485 0.015012 11.66 1.52864 0.01563 10.06 1.47576 0.0164372 10.63 1.56249 0.01412 10.3301 PASS PASSidd_stop_MTemp_3v uA 0 4 1.20134 0.0800364 11.67 1.4424 0.62112 1.87 1.14295 0.0780312 12.2 1.268 0.01168 2.089 PASS PASSidd_stop_MTemp_5v uA 0 5 1.56756 0.147572 7.75 1.7614 0.55643 1.76 1.53072 0.156033 7.41 1.903 0.03836 1.886 PASS PASS
Cold
Parameter Name in Datasheet Units Low Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpkidd_run_5v mA 0 10 4.96808 0.04381693 23.0651 4.83978 0.03834 2.47 4.94136 0.05129269 32.87 4.94801 0.0358 47.04 PASS PASSidd_run_3v mA 0 5 2.53136333 0.03195887 25.7481 2.5223 0.02336 35.99 2.54447 0.03722279 21.99 2.53908 0.03215 25.51 PASS PASSidd_wait_3v mA 0 1 0.49175292 0.01760569 9.31049 0.50028 0.00858 19.41 0.51145 0.0769125 2.12 0.48785 0.01635 12.48 PASS PASSidd_wait_5v mA 0 2 1.48173667 0.01636924 10.5536 1.5123 0.00773 21.03 1.47810 0.01961444 8.87 1.47674 0.01701 10.25 PASS PASSidd_stop_MTemp_3v uA 0 0.8 0.28381557 0.05212473 3.30096 0.22603 0.05361 2.4 0.28999 0.09327858 1.82 0.29651 0.11386 2.06 PASS PASSidd_stop_MTemp_5v uA 0 1 0.38513601 0.06960016 2.94474 0.31001 0.04498 2.3 0.38324 0.0605671 3.39 0.38022 0.09331 3.21 PASS PASS
Comment
Comment
Report Date: 20/Apr/11Report Revision: 0
CHD Devices Pre HTOL CHD Devices Post HTOLSND Devices Pre HTOL SND Devices Post HTOL Pre CHD mean+-1
SND sigma or +-10%
Post CHD mean+-1
SND sigma or +-10%
Comment
25C 25C 25C25C
125C 125C 125C
CHD Devices Pre HTOL CHD Devices Post HTOL SND Devices Post HTOLSND Devices Pre HTOL
125C
-40CSND Devices Post HTOL
Pre CHD mean+-1
SND sigma or +-10%
Post CHD mean+-1
SND sigma or +-10%
Pre CHD mean+-1
SND sigma or +-10%
Post CHD mean+-1
SND sigma or +-10%
CHD Devices Pre HTOL CHD Devices Post HTOL-40C -40C
SND Devices Pre HTOL-40C
Qualification Results for the FAB Site Transfer
From Freescale Sendai FabTo Freescale Chandler Fab
For HC908QC16FSL-CHD- Fab/Mask M80Z
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
Technology:
Package: Design Engr: QUARTZ Tracking #: 206280(package)/202069(die)
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below may be
electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Shong Lee Ming
May-6-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
5-May-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT A(die qual)
LJXE05123K00
5CTQV10511
LOT B(die qual)
LJXE05123L00
5CTQW10512
LOT C(die qual)
LJXE05123M00
5CTQX10513
CAB Approval
Signature & Date:
10272023M
13-May-2011
LOT D
LJXED4827Z00
5CTQQ1048
LOT E
LJXED4828100
5CTQQ1048
LOT F
LJXED4828000
5CTQQ1048
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document otherwise
with justification)
TEST @ RH LJXED4827Z00: 0/231
LJXED4828100: 0/231
LJXED4828000: 0/231
Use 28 TSSOP Package
Use material that has been Burn-in
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 3 231 LJXED4827Z00: 0/77
LJXED4828100: 0/77
LJXED4828000: 0/77
Use 28 TSSOP Package
Use material that has been Burn-in
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @ MSL3,
260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 3 231 LJXED4827Z00: 0/77
LJXED4828100: 0/77
LJXED4828000: 0/77
Use 28 TSSOP Package
Use material that has been Burn-in
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
For AEC only: WBP after TC on 5 devices from 1
lot; 2 bonds per corner and one mid-bond per side
on each device. Record which pins were used.
TEST @ H
For AEC: WBP =/> 3
grams
77 3 231 LJXED4827Z00: 0/77, WP: 0/5, min>3g
LJXED4828100: 0/77
LJXED4828000: 0/77
Use 28 TSSOP Package
Use material that has been Burn-in
PC + PTC
JESD22-
A105Preconditioning plus Power Temperature Cycle
(PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices designed
to drive inductive loads.
AEC-Q100/Commercial/Industrial Tier Qual Results
"Varies"
"Varies"
Liu David - R66090
Qualification of 85% UDRSST 68HC908QC16 in CHD 68HC908QC16
QC16
3.546x2.711
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
U050FXXD /85%UDRSST
20TSSOP Pkg Code 6118 /28 TSSOP Pkg Code 6142
FSL-CHD-FAB/ATP1 /FSL-TJN-FM
Jim Carlquist - RMSD80
Ziep Tran - RSJP50/Shong Lee Ming-B21406
Tammie Gause - RA7914/Nancy Long - B07252
M80Z
0
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC and
as required per test conditions.
Bias =
PTC
JESD22-
A105Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices designed
to drive inductive loads.
HTSL
JESD22-
A103High Temperature Storage Life (HTSL):
150°C for 168hrs, 504hrs and 1000 hrs and/or
175oC for 168hrs and 500 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 0 0 See EDR
FORMPPAP004XLS 1 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
"Varies"
"Varies"
68HC908QC16
QC16
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108High Temperature Operating Life (HTOL):
10k Flash W/E Cycling (125oC) + HTOL
Ta = 125°C for 1008 hrs
Bias = 6V
Devices incorporating NVM shall receive 'NVM
endurance preconditioning' prior to this test, and
special NVM test sequencing after this test.
Timed RO of 96hrs. MAX
TEST @ RHC 77 3 231 LJXE05123K00: 0/77
LJXE05123L00: 0/77
LJXE05123M00: 0/77
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 3 2400 LJXE05123K00: 0/800
LJXE05123L00: 0/800
LJXE05123M00: 0/800
Use 28 TSSOP Burn In Material
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 3 2400 LJXE05123K00: 0/800
LJXE05123L00: 0/800
LJXE05123M00: 0/800
Use 28 TSSOP Material that has not
been burned in
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Flash W/E Cycling (125oC)+Flash DRB @
150oC for 1008hrs
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test R,
H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 3 231 LJXE05123K00: 0/77
LJXE05123L00: 0/77
LJXE05123M00: 0/77
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 XE04827Z00, 0/5, Cpk>1.67
XE04828000, 0/5, Cpk>1.67
XE04828100, 0/5, Cpk>1.67
Performed by Assembly Site during qual
lot builds - PE to include this
requirement in the qual lot build ERF
WBP
MilStd883-
2011Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 XE04827Z00, 0/5, Cpk>1.67
XE04828000, 0/5, Cpk>1.67
XE04828100, 0/5, Cpk>1.67
Performed by Assembly Site during qual
lot builds - PE to include this
requirement in the qual lot build ERF
SD
JESD22-
B102Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to
test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
Dimensional (DIM):
PPE to verify PD results against valid 98A
drawing.
BOM Verification (BOM):
DIM: Not Required
BOM: done
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
&
BOM BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages
e.g. PBGA, Chip Scale, Micro Lead Frame (but
NOT Flip Chip).
Two reflow cycles at MSL reflow temperature
before shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted packages only;
NOT for Flip Chips.
LI
JESD22-
B105Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each of 5
parts)
0 0
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
SM
Stress Migration (SM) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 2 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
"Varies"
"Varies"
68HC908QC16
QC16
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):
For AEC, test software shall meet requirements of
AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all
qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage level 1 12 LJXE05123K00:
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
Performed using 28 TSSOP
MM
AEC-Q100-003
or JESD22ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/150/200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage level 1 12 LJXE05123K00:
0/3@50V
0/3@100V
0/3@150V
0/3@200V
Performed using 28 TSSOP
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage level 1 9 LJXE05123K00:
0/3@250V
0/3@500V
0/3@750V
Performed using 28 TSSOP
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-004
requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 1 6 LJXE05123K00:
0/6
Performed using 28 TSSOP
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 30 3 90 LJXE05123K00: Cpk>1.67
LJXE05123L00; Cpk>1.67
LJXE05123M00; Cpk>1.67
FG
For AEC, AEC-
Q100-007Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003Characterization (CHAR):
Ony performed on new technologies and part
families per AEC Q003.
GL (for
information only)
For AEC, AEC-
Q100-006Electro-Thermally Induced Gate Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
TEST @ R 6 1 6 LJXE05123K00: 0/6
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
information only) For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest; recovered
units are GL failures.
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per
customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1 1 1 Report available upon request.
Date Author
25-Aug-09 T. Gause
27-Apr-11 Nancy LongRev A Add Qual Result
General Notes:
1 -QC16 Wafer tech code U050FXXD
2 -QC16 BOM: SUMITOMO G700K Mold Compound, ABLEBOND 8290 Die Attach Epoxy, 1mil Gold Wire
Generated Plan
Revision Comments
Rev O
FORMPPAP004XLS 3 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
"Varies"
"Varies"
68HC908QC16
QC16
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
Technology:
Package: Design Engr: QUARTZ Tracking #: 202067
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below may be
electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
6-May-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
5-May-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT A
TJEME005F3V00
4YTUA
LOT B
TJEME005F3W00
4YTUB
LOT C
TJEME005F3X00
4YTUD
CAB Approval
Signature & Date:
10272023M
13-May-2011
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document otherwise
with justification)
TEST @ RH LotA: 0/231
LotB: 0/231
LotC: 0/231
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 3 231 LotA: 0/77
LotB: 0/77
LotC: 0/77
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @ MSL3,
260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 3 231 LotA: 0/77
LotB: 0/77
LotC: 0/77
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles
For AEC only: WBP after TC on 5 devices from 1
lot; 2 bonds per corner and one mid-bond per side
on each device. Record which pins were used.
TEST @ H
For AEC: WBP =/> 3
grams
77 3 231
LotA: 0/77, WBP: 0/5, min>3g
LotB: 0/77
LotC: 0/77
JESD22- Preconditioning plus Power Temperature Cycle TEST @ RH 0 0 0 Only Required for AEC devices with
Qualification of 85% UDRSST 68HC908QC16 in CHD 68HC908QC16
QC16
"Varies"
"Varies"
U050FXXD /85%UDRSST
16 TSSOP Pkg Code 6117 Jim Carlquist - RMSD80
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM Liu David - R66090
AEC-Q100/Commercial/Industrial Tier Qual Results
M80Z
0 Ziep Tran - RSJP50
3.546x2.711 Tammie Gause - RA7914/Nancy Long - B07252
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC and
as required per test conditions.
PC + PTC
JESD22-
A105Preconditioning plus Power Temperature Cycle
(PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices designed
to drive inductive loads.
PTC
JESD22-
A105Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices designed
to drive inductive loads.
HTSL
JESD22-
A103High Temperature Storage Life (HTSL):
150oC for 1008 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 1 77 LotC: 0/77
FORMPPAP004XLS 4 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
"Varies"
"Varies"
68HC908QC16
QC16
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108High Temperature Operating Life (HTOL):
10k W/E Cycling (125oC) + HTOL
Ta = 125°C for 1008 hrs
Bias = 6V
Devices incorporating NVM shall receive 'NVM
endurance preconditioning' prior to this test, and
special NVM test sequencing after this test.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass See TSSOP Qual Results
Q202069, QC16(28TSSOP): 0/231
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass See TSSOP Qual Results
Q202069, QC16(28TSSOP): 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Flash W/E Cycling (125C)+Flash DRB @
150°C for 1008hrs
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test R,
H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass See TSSOP Qual Results
Q202069, QC16(28TSSOP): 0/231
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
LotB: 0/5, Cpk>1.67
LotC: 0/5, Cpk>1.67
Performed by Assembly Site during qual
lot builds - PE to include this
requirement in the qual lot build ERF
WBP
MilStd883-
2011Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
LotB: 0/5, Cpk>1.67
LotC: 0/5, Cpk>1.67
Performed by Assembly Site during qual
lot builds - PE to include this
requirement in the qual lot build ERF
SD
JESD22-
B102Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to
test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A
drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
DIM: Not Required
BOM: done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages
e.g. PBGA, Chip Scale, Micro Lead Frame (but
NOT Flip Chip).
Two reflow cycles at MSL reflow temperature
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted packages only;
NOT for Flip Chips.
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
Two reflow cycles at MSL reflow temperature
before shear.
LI
JESD22-
B105Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each of 5
parts)
0 0
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
SM
Stress Migration (SM) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 5 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
"Varies"
"Varies"
68HC908QC16
QC16
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):
For AEC, test software shall meet requirements of
AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all
qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage level 0 0 pass See TSSOP28 Qual Results
Q202069, QC16(28TSSOP):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage level 0 0 pass See TSSOP28 Qual Results
Q202069, QC16(28TSSOP):
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage level 1 9 LotA:
0/3@250V
0/3@500V
0/3@750V
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-004
requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 0 0 pass See TSSOP28 Qual Results
Q206280/202069, QC16(28TSSOP):
0/6
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 30 0 0 completed Done on QC16 TSSOP28 package
FG
For AEC, AEC-
Q100-007Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003Characterization (CHAR):
Ony performed on new technologies and part
families per AEC Q003.
GL (for
information only)
For AEC, AEC-
Q100-006Electro-Thermally Induced Gate Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
TEST @ R 6 1 6 LotA: 0/6
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
information only) For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest; recovered
units are GL failures.
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per
customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1 0 0 Done on TSSOP28 pacakge
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number CAB Date
202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M 13-May-11
Date Author
25-Aug-09 T. Gause
27-Apr-11 Nancy Long
General Notes:
1 -QC16 Wafer tech code U050FXXD
2 - QC16 BOM: SUMITOMO G700K Mold Compound, ABLEBOND 8290 Die Attach Epoxy, 25um Gold Wire
Die Qual Vehicles
Revision Comments
Rev A Add Qual Result
Rev O Generated Plan
FORMPPAP004XLS 6 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
"Varies"
"Varies"
68HC908QC16
QC16
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
Technology:
Package: Design Engr: QUARTZ Tracking #: 202065
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below may be
electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
6-May-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
5-May-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT A
TJEME005GQD00
CTNAQQ1049A
LOT B
TJEME005GQE00
CTNAQQ1049B
LOT C
TJEME005GQC00
CTNAQQ1049D
CAB Approval
Signature & Date:
10272023M
13-May-2011
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document otherwise
with justification)
TEST @ RH LotA: 0/231
LotB: 0/231
LotC: 0/231
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 3 231 LotA: 0/77
LotB: 0/77
LotC: 0/77
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @ MSL3,
260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 3 231 LotA: 0/77
LotB: 0/77
LotC: 0/77
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
For AEC only: WBP after TC on 5 devices from 1
TEST @ H
For AEC: WBP =/> 3
grams
77 3 231 LotA: 0/77, WP: 0/5, Min>3
LotB: 0/77
LotC: 0/77
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC and
as required per test conditions.
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM Liu David - R66090
M80Z
0 Ziep Tran - RSJP50
3.546x2.711 Tammie Gause - RA7914/Nancy Long - B07252
Comm/Ind Tier Qual Results
Qualification of 85% UDRSST 68HC908QC16 in CHD 68HC908QC16
QC16
"Varies"
"Varies"
U050FXXD /85%UDRSST
2003/16W SOIC Jim Carlquist - RMSD80
lot; 2 bonds per corner and one mid-bond per side
on each device. Record which pins were used.
PC + PTC
JESD22-
A105Preconditioning plus Power Temperature Cycle
(PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices designed
to drive inductive loads.
PTC
JESD22-
A105Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices designed
to drive inductive loads.
HTSL
JESD22-
A103High Temperature Storage Life (HTSL):
175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 1 77 LotA: 0/77
FORMPPAP004XLS 7 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
"Varies"
"Varies"
68HC908QC16
QC16
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108High Temperature Operating Life (HTOL):
10k W/E Cycling (125oC) + HTOL
Ta = 125°C for 1008 hrs
Bias = 6V
Devices incorporating NVM shall receive 'NVM
endurance preconditioning' prior to this test, and
special NVM test sequencing after this test.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass See TSSOP Qual Results
Q202069, QC16(28TSSOP): 0/231
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass See TSSOP Qual Results
Q202069, QC16(28TSSOP): 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Flash (Page) W/E Cycling (125C)+Flash
DRB @ 150°C for 1008hrs
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test R,
H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass See TSSOP Qual Results
Q202069, QC16(28TSSOP): 0/231
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
LotB: 0/5, Cpk>1.67
LotC: 0/5, Cpk>1.67
Performed by Assembly Site during qual
lot builds - PE to include this
requirement in the qual lot build ERF
WBP
MilStd883-
2011Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
LotB: 0/5, Cpk>1.67
LotC: 0/5, Cpk>1.67
Performed by Assembly Site during qual
lot builds - PE to include this
requirement in the qual lot build ERF
SD
JESD22-
B102Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to
test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A
drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
DIM: Not Required
BOM: done
AEC-Q100-010 Solder Ball Shear (SBS): Cpk = or >1.67 10 0 0 For solder ball mounted packages only;
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages
e.g. PBGA, Chip Scale, Micro Lead Frame (but
NOT Flip Chip).
Two reflow cycles at MSL reflow temperature
before shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted packages only;
NOT for Flip Chips.
LI
JESD22-
B105Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each of 5
parts)
0 0
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
SM
Stress Migration (SM) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 8 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
"Varies"
"Varies"
68HC908QC16
QC16
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):
For AEC, test software shall meet requirements of
AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all
qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage level 0 0 pass See TSSOP Qual Results
Q202069, QC16(28TSSOP):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage level 0 0 pass See TSSOP Qual Results
Q202069, QC16(28TSSOP):
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage level 1 9 LotA:
0/3@250V
0/3@500V
0/3@750V
CDM will be done in KLM
Levels below 500V for all other pins
require customer approval.
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-004
requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 0 0 pass See TSSOP Qual Results
Q206280/202069, QC16(28TSSOP):
0/6
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC AEC: 30
Comm/Ind: 5
0 0 completed Done on QC16 TSSOP28 package
FG
For AEC, AEC-
Q100-007Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003Characterization (CHAR):
Ony performed on new technologies and part
families per AEC Q003.
GL (for
information only)
For AEC, AEC-
Q100-006Electro-Thermally Induced Gate Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest; recovered
units are GL failures.
TEST @ R 6 0 0
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
units are GL failures.
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per
customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1 0 0 Done on TSSOP28 pacakge
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number CAB Date
202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M 13-May-11
Date Author
25-Aug-09 T. Gause
27-Apr-11 Nancy LongRev A Add Qual Result
General Notes:
1 -QC16 Wafer tech code U050FXXD
2 - QC16 BOM: SUMITOMO G600 Mold Compound, ABLEBOND 8290 Die Attach Epoxy, 25um Gold Wire
Die Qual Vehicles
Revision Comments
Rev O Generated Plan
FORMPPAP004XLS 9 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
"Varies"
"Varies"
68HC908QC16
QC16
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
Technology:
Package: Design Engr: QUARTZ Tracking #: 202063
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below may be
electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-6-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-5-2011
Part Operating
Temp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT A
TJEME005F3400
CTNAZM1046A
LOT B
JEME005ERD00
CTNAZM1046D
LOT C
TJEME005EE400
CTNAZM1047D
CAB Approval
Signature & Date:
10272023M
13-May-2011
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or document otherwise
with justification)
TEST @ RH LotA: 0/231
LotB: 0/231
LotC: 0/231
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test (HAST):
PC before HAST (for SMDs only): Required @
MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 3 231 LotA: 0/77
LotB: 0/77
LotC: 0/77
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only): Required @ MSL3,
260oC
AC = 121°C/100%RH/15 psig for 96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 3 231 LotA: 0/77
LotB: 0/77
LotC: 0/77
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only): Required
TC = -65°C to 150°C for 500 cycles.
For AEC only: WBP after TC on 5 devices from 1
lot; 2 bonds per corner and one mid-bond per side
on each device. Record which pins were used.
TEST @ H(C)
For AEC: WBP =/> 3
grams
77 3 231 LotA: 0/77, WP: 0/5, Min>3
LotB: 0/77
LotC: 0/77
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC and
as required per test conditions.
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM Liu David - R66090
M80Z Ziep Tran - RSJP50
3.546x2.711 Tammie Gause - RA7914/Nancy Long - B07252
Comm/Ind Tier Qual Results
Qualification of 85% UDRSST 68HC908QC16 in CHD 68HC908QC16
QC16
"Varies"
"Varies"
U050FXXD /85%UDRSST
2009/28W SOIC Jim Carlquist - RMSD80
PC + PTC
JESD22-
A105Preconditioning plus Power Temperature Cycle
(PC+PTC):
(See AEC-Q100 for test applicability criteria)
PC before PC+PTC (for SMDs only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices designed
to drive inductive loads.
PTC
JESD22-
A105Power Temperature Cycle (PTC):
(See AEC-Q100 for test applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with
maximum rated power > 1 Watt and
Delta-Tj > 40C or for devices designed
to drive inductive loads.
HTSL
JESD22-
A103High Temperature Storage Life (HTSL):
175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 1 77 LotC: 0/77
FORMPPAP004XLS 10 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
"Varies"
"Varies"
68HC908QC16
QC16
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108High Temperature Operating Life (HTOL):
10k W/E Cycling (125oC) + HTOL
Ta = 125°C for 1008 hrs
Bias = 6V
Devices incorporating NVM shall receive 'NVM
endurance preconditioning' prior to this test, and
special NVM test sequencing after this test.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass See TSSOP Qual Results
Q202069, QC16(28TSSOP): 0/231
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass See TSSOP Qual Results
Q202069, QC16(28TSSOP): 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and
Operational Life (EDR):
10K Flash (Page) W/E Cycling (125C)+Flash
DRB @ 150°C for 1008hrs
Devices incorporating NVM shall receive 'NVM
endurance preconditioning'(W/E cycling). Test R,
H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass See TSSOP Qual Results
Q202069, QC16(28TSSOP): 0/231
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
LotB: 0/5, Cpk>1.67
LotC: 0/5, Cpk>1.67
Performed by Assembly Site during qual
lot builds - PE to include this
requirement in the qual lot build ERF
WBP
MilStd883-
2011Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
LotB: 0/5, Cpk>1.67
LotC: 0/5, Cpk>1.67
Performed by Assembly Site during qual
lot builds - PE to include this
requirement in the qual lot build ERF
SD
JESD22-
B102Solderability (SD):
8hr.(1 hr. for Au-plated leads) Steam age prior to
test.
If production burn-in is done, samples must also
undergo burn-in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-
B100Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against valid 98A
drawing.
BOM Verification (BOM):
DIM: Not Required
BOM: done
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
BOM BOM Verification (BOM):
PPE to verify qual lot ERF BOM is accurate.
SBS
AEC-Q100-010 Solder Ball Shear (SBS):
Performed on all solder ball mounted packages
e.g. PBGA, Chip Scale, Micro Lead Frame (but
NOT Flip Chip).
Two reflow cycles at MSL reflow temperature
before shear.
Cpk = or >1.67 10
(5 balls from a min. of
10 devices)
0 0 For solder ball mounted packages only;
NOT for Flip Chips.
LI
JESD22-
B105Lead Integrity (LI):
Not required for surface mount devices;
Only required for through-hole devices.
No lead breakage or
cracks
5
(10 leads from each of 5
parts)
0 0
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
SM
Stress Migration (SM) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and
internal criteria should be available to
the customer upon request for new
technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 11 of 12 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:
See Revision History
"Varies"
"Varies"
68HC908QC16
QC16
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):
For AEC, test software shall meet requirements of
AEC-Q100-007.
Testing performed to the limits of device
specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all
qualification units.
HBM
AEC-Q100-002 /
JESD22-A114E
Jan 2007
ElectroStatic Discharge/
Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for classification
levels.
TEST @ RH
2KV min.
3 units per Voltage level 0 0 pass See TSSOP Qual Results
Q202069, QC16(28TSSOP):
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-003
or JESD22ElectroStatic Discharge/
Machine Model Classification m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for classification
levels.
TEST @ RH
200V min.
3 units per Voltage level 0 0 pass See TSSOP Qual Results
Q202069, QC16(28TSSOP):
0/3@50V
0/3@100V
0/3@150V
0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/
Charged Device Model Classification (CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for classification
levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage level 1 9 LotC:
0/3@250V
0/3@500V
0/3@750V
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the AEC-Q100-004
requirements for AEC.
Ta= 125oC
Vsupply = 5.5V Maximum operating voltage
TEST @ RH 6 0 0 pass See TSSOP Qual Results
Q206280/202069, QC16(28TSSOP):
0/6
ED
AEC-Q100-009,
Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 30 0 0 completed Done on QC16 TSSOP28 package
FG
For AEC, AEC-
Q100-007Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC, AEC-
Q003Characterization (CHAR):
Ony performed on new technologies and part
families per AEC Q003.
GL (for
For AEC, AEC-
Q100-006Electro-Thermally Induced Gate Leakage (GL):
155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is performed for
information only.
TEST @ R 6 0 0 AEC Requirement. Not required for
Commercial/Industrial.
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
GL (for
information only)Timed RO of 96 hrs MAX.
For all failures, perform unbiased bake
(4hrs/125°C, or 2hrs/150°C) and retest; recovered
units are GL failures.
EMC
SAE J1752/3 -
Radiated
Emissions
Electromagnetic Compatibility (EMC)
(see AEC Q100 Appendix 5 for test applicability;
done on case-by-case basis per
customer/Freescale agreement)
<40dBuV
150KHz - 1GHz
1 0 0 Done on TSSOP28 pacakge
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number
202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M
Date Author
25-Aug-09 T. Gause
27-Apr-11 Nancy LongRev A Add Qual Result
General Notes:
1 -QC16 Wafer tech code U050FXXD
2 - QC16 BOM: SUMITOMO EME-G600 Mold Compound, SUMITOMO CRM-1064MBL Die Attach Epoxy, 25um Gold Wire
Die Qual Vehicles
Revision Comments
Rev O Generated Plan
FORMPPAP004XLS 12 of 12 Freescale Rev T
(0M80Z, CHD) Electrical DistributionReport Date: Apr/28/2011Report Revision: 0
Per AEC Q100 Rev G, ED Appendix Rev B; any key datasheet parameter with Cpk < 1.67 will require justification and FSL NPI Quality approval.
Hot CHD1 Devices Pre HTOL CHD2 Devices Pre HTOL CHD3 Devices Pre HTOL SND Devices Pre HTOL CHD1 Devices Post HTOL CHD2 Devices Post HTOL CHD3 Devices Post HTOL SND Devices Post HTOL
Comment
130C 130C 130C 130C 130C 130C 130C 130C
Parameter Name in Datasheet Units Lower Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std CpkStop mode VDD supply current,Vdd=3.0V uA 0 5 1.4851968 0.2772625 1.7855482 1.7719258 0.1072874 5.5052291 1.7870355 0.122215 4.87402 3.3836645 0.1165946 4.6209567 1.5608129 0.1828873 2.8447633 1.9430419 0.2951129 2.194688 1.8630774 0.1474566 4.2115824 2.51931 0.1207196 6.8497276Stop mode VDD supply current,Vdd=5.0V uA 0 6.5 1.8724806 0.244345 2.5544218 2.4053935 0.1647558 4.8665829 2.2879613 0.1590007 4.7965422 3.9152452 0.1401464 6.1477502 1.9465935 0.277371 2.339338 2.5327484 0.2160938 3.9068661 2.3795968 0.1875076 4.2302218 2.9718633 0.1473086 6.7248034Run mode VDD supply current,Vdd=3.0V mA 0 4.5 2.5031355 0.0231846 28.709603 2.5216355 0.0207459 31.787286 2.5098355 0.0153448 43.232164 2.608729 0.0282641 22.304766 2.4957903 0.0262236 25.475896 2.5184484 0.0166454 39.681577 2.4997742 0.0145941 45.685765 2.6412533 0.0297552 20.822626Run mode VDD supply current,Vdd=5.0V mA 0 8.5 4.156871 0.0328797 42.142182 4.1899935 0.0285024 49.001672 4.1601839 0.0224722 61.708621 4.3000935 0.0473186 29.586032 4.1661452 0.0371176 37.413946 4.2029581 0.0234534 59.734922 4.1643419 0.0185913 74.664843 4.3512433 0.0452064 30.591221Wait mode VDD supply current,Vdd=3.0V mA 0 2.2 1.2264194 0.0144998 22.38154 1.2305161 0.0157682 20.494525 1.2240516 0.0117922 27.58734 1.2658548 0.0134107 23.218922 1.2139419 0.0155798 21.096919 1.2203161 0.0114975 28.402784 1.2099581 0.011899 27.734697 1.2790867 0.0144112 21.300877Wait mode VDD supply current,Vdd=5.0V mA 0 3.3 1.7405935 0.0151957 34.207237 1.7503323 0.0171186 30.175171 1.7414839 0.0121301 42.827683 1.8184161 0.0161301 30.617298 1.7390355 0.0177886 29.250213 1.7504097 0.0135249 38.191189 1.7372129 0.0122717 42.449452 1.8324067 0.0170188 28.744532
Osc(untrimed) Mhz 2.4 4 2.8909129 0.0694297 2.3568837 3.0118871 0.0803911 2.5371264 3.044729 0.1222903 1.7573734 3.1609774 0.0841881 3.0130038 2.8948452 0.0857472 1.9236585 3.0126581 0.0620458 3.2914283 3.0526 0.1025422 2.1214036 3.1639567 0.0869216 2.9296763Osc(trimed) Mhz 3.04 3.36 3.2259387 0.0055768 8.0130673 3.2122903 0.0120239 4.0948995 3.2053548 0.0098632 5.2263391 3.195329 0.0108434 4.7749015 3.216371 0.0094504 5.0660823 3.2110387 0.0091714 5.4140041 3.2038387 0.0095448 5.4536081 3.1959133 0.0085419 6.084232
Output high voltage, ILoad = –10.0 mA,Vdd=5.0V V 2.8 4.3 3.5175387 0.0093449 25.594571 3.5581452 0.0077322 31.981284 3.5248871 0.0065027 37.158239 3.4312903 0.0177115 11.880956 3.5199258 0.0101608 23.617739 3.5574129 0.0088497 27.970455 3.5225548 0.0053879 44.701989 3.4411867 0.0177746 12.024413Output high voltage, ILoad = –0.6 mA,Vdd=5.0V V 3.9 4.3 4.1552419 0.0018266 26.416477 4.1616968 0.0018892 24.402731 4.1562 0.0015593 30.740815 4.1399097 0.0027142 19.660807 4.1546194 0.0021935 22.092252 4.160729 0.0019863 23.371704 4.1548161 0.0015269 31.694866 4.1419633 0.002821 18.673573Output low voltage, ILoad = 10.0 mA,Vdd=5.0V mV 0 1500 772.84806 9.0551899 26.76741 767.10139 7.279563 33.559643 787.75025 12.683403 18.718682 852.53929 5.837389 36.97205 771.19847 10.329952 23.517423 766.52376 8.4379015 28.97546 786.69863 8.5571776 27.785695 848.67973 5.8498041 37.113509Output low voltage, ILoad = 0.5 mA,Vdd=5.0V mV 0 400 120.52087 1.4232667 28.226349 119.98646 1.1698791 34.187712 122.91605 2.0648499 19.842613 132.63966 0.9945799 44.454167 120.39876 1.6627991 24.135759 119.82825 1.4172542 28.183194 122.91205 1.356176 30.210445 132.00299 0.9653827 45.578813
Pullup resistors,Vdd=3.0V kΩ 16 36 22.964375 0.284175 10.781078 23.718548 0.4890682 5.4150502 24.183166 0.3711016 6.4815765 24.667683 0.7200632 3.002044 23.037784 0.3228469 9.3607394 23.929083 0.5188483 4.8897626 24.166777 0.3895837 6.1956819 24.549733 0.7411498 2.9954702Pullup resistors,Vdd=5.0V kΩ 16 36 25.449938 0.3019313 10.259316 26.297972 0.4849583 5.5164509 26.801576 0.366513 6.6493679 27.285372 0.7277501 3.0457682 25.480442 0.3309076 9.3135648 26.405006 0.4872359 5.3852123 26.744953 0.3990021 6.1739291 27.239507 0.7594233 2.9458245
Room Pre-HTOL Hot (lot1) Pre-HTOL Hot (lot2) Pre-HTOL Hot (lot3) SND Devices Pre HTOL Post-HTOL Hot (lot1) Post-HTOL Hot (lot2) Post-HTOL Hot (lot3) SND Devices Post HTOL
Comment25C 25C 25C 25C 25C 25C 25C 25C
Parameter Name in Datasheet Units Low Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std CpkStop mode VDD supply current,Vdd=3.0V nA 0 1500 240.99258 18.506833 4.3406054 253.8947 44.013543 1.9228528 257.21973 36.724894 2.3346537 230.2277 42.293779 1.814512 202.01176 35.57327 1.8929171 203.23856 33.587792 2.0169884 215.76979 36.813388 1.9537258 224.42293 43.75886 1.7095428Stop mode VDD supply current,Vdd=5.0V nA 0 1500 361.81495 56.533167 2.1333491 360.99641 48.551571 2.4784396 370.31094 44.729748 2.7596172 336.03222 44.31127 2.5278161 320.82208 38.435345 2.7823529 326.04006 63.144773 1.7211246 319.8645 32.752141 3.2554055 304.67326 46.207846 2.1978466Run mode VDD supply current,Vdd=3.0V mA 0 4.5 2.3687419 0.0279366 25.429718 2.3883645 0.0197235 35.687336 2.3651516 0.0191794 37.103088 2.48148 0.0275965 24.381347 2.3719097 0.0252418 28.102674 2.3890419 0.0173564 40.541313 2.369 0.019323 36.760945 2.5085067 0.0271452 24.454823Run mode VDD supply current,Vdd=5.0V mA 0 8.5 3.9784871 0.0364746 36.358471 4.0087452 0.0250126 53.423079 3.9603516 0.0231243 57.087913 4.1156667 0.0405801 33.806974 3.9892 0.033437 39.768302 4.0149194 0.0198562 67.399962 3.9710065 0.0230441 57.440786 4.16186 0.0384867 36.045874Wait mode VDD supply current,Vdd=3.0V mA 0 2.2 1.1504355 0.0181327 19.294152 1.1552968 0.0144254 24.140316 1.1436935 0.0152618 23.070777 1.2083 0.0159706 20.698509 1.1483871 0.0163931 21.383265 1.1528161 0.0141654 24.641854 1.1414839 0.0141119 25.002941 1.20257 0.0155711 21.352212Wait mode VDD supply current,Vdd=5.0V mA 0 3.3 1.6698226 0.0181014 30.019341 1.6790032 0.0155123 34.83249 1.6633226 0.0132498 41.174747 1.75142 0.0168523 30.630424 1.6672871 0.0169169 32.171333 1.6762419 0.0136873 39.544048 1.6616355 0.0132628 41.176802 1.7496533 0.0168395 30.688728
Osc(untrimed) Mhz 2.4 4 2.8735226 0.0838976 1.8813507 2.9979032 0.087364 2.2812727 3.0028871 0.1047301 1.9188604 3.2059633 0.1152663 2.2962375 2.8830032 0.0902797 1.7833585 3.0103677 0.0816909 2.490559 3.0303548 0.1013073 2.0740682 3.19438 0.1217537 2.1748275Osc(trimed) Mhz 3.04 3.36 3.2226903 0.0096912 4.7228417 3.2150774 0.0088559 5.4548118 3.2050931 0.0117407 4.3980111 3.19262 0.0077911 6.5296875 3.2244387 0.0114727 3.9386787 3.2127194 0.0097566 5.031855 3.2074793 0.0097533 5.2126423 3.19493 0.0084373 6.1208511
Output high voltage, ILoad = –10.0 mA,Vdd=5.0V V 2.8 4.3 3.6984903 0.0069105 29.014116 3.7251968 0.0059979 31.944907 3.6974645 0.0066721 30.102202 3.6294161 0.0197571 11.313818 3.7008516 0.0075909 26.310058 3.7292742 0.0077692 24.486647 3.7019774 0.0057701 34.546993 3.6358433 0.0152288 14.537274Output high voltage, ILoad = –0.6 mA,Vdd=5.0V V 3.9 4.3 4.1852355 0.0014598 26.205434 4.1896839 0.0013931 26.395814 4.1848 0.0018081 21.237414 4.1752032 0.003209 12.963221 4.1868065 0.0017697 21.320261 4.1914774 0.0017576 20.581645 4.1868194 0.0015467 24.391861 4.1741867 0.0030894 13.574554Output low voltage, ILoad = 10.0 mA,Vdd=5.0V mV 0 1500 649.12302 8.8312026 24.501118 648.04916 7.0033821 30.844581 667.46966 8.5236338 26.102703 726.35231 5.7240358 42.298379 648.73704 8.1727821 26.459249 648.35198 5.7786621 37.399198 665.25707 8.0028009 27.709343 725.26171 8.7069358 27.76567Output low voltage, ILoad = 0.5 mA,Vdd=5.0V mV 0 400 101.94492 1.3653644 24.888331 101.84193 1.1809322 28.746199 104.80815 1.3757701 25.393815 114.24689 1.0004863 38.063787 101.96795 1.2786843 26.581478 102.03822 0.8827223 38.531642 104.60696 1.3168161 26.479771 114.03054 1.4972176 25.387212
Pullup resistors,Vdd=3.0V kΩ 16 36 21.673716 0.384703 9.9860158 22.546025 0.4771082 6.9294863 22.851145 0.4164077 7.5129371 23.003322 0.7974775 3.8140192 21.666258 0.3663 10.500724 22.525223 0.5251277 6.3192311 22.83535 0.4213491 7.4463804 22.953274 0.789999 3.8861201Pullup resistors,Vdd=5.0V kΩ 16 36 23.994683 0.3847229 10.116287 25.002599 0.4866386 6.8468621 25.331466 0.4206502 7.5094801 25.460817 0.8043101 3.8443036 24.001205 0.3726127 10.434942 24.953291 0.5311556 6.3226135 25.290098 0.4267174 7.4531517 25.406878 0.8102146 3.8505929
Cold Pre-HTOL Hot (lot1) Pre-HTOL Hot (lot2) Pre-HTOL Hot (lot3) SND Devices Pre HTOL Post-HTOL Hot (lot1) Post-HTOL Hot (lot2) Post-HTOL Hot (lot3) SND Devices Post HTOL
Comment -40C -40C -40C -40C -40C -40C -40C -40C
Parameter Name in Datasheet Units Low Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std CpkStop mode VDD supply current,Vdd=3.0V nA 0 1500 209.96876 38.436846 1.8208983 218.94107 38.356853 1.902668 214.59923 36.030229 1.9853628 213.98729 36.795492 1.9385282 179.82943 31.491381 1.9034778 184.02283 34.487277 1.7786543 205.52546 35.506974 1.9294375 230.17052 40.510931 1.8938964Stop mode VDD supply current,Vdd=5.0V nA 0 1500 345.93994 46.118624 2.5003632 312.91395 60.672884 1.7191312 328.02439 48.076035 2.2743444 309.43623 56.689219 1.819489 296.69714 41.446866 2.3861646 296.69714 41.446866 2.3861646 290.90399 37.803986 2.5650204 382.32314 67.344262 1.8923817Run mode VDD supply current,Vdd=3.0V mA 0 4.5 2.3162484 0.026436 27.535064 2.3220097 0.0215038 33.761319 2.2954 0.0204655 35.907642 2.3864581 0.0295687 23.826309 2.3172742 0.027027 26.920313 2.3172742 0.027027 26.920313 2.291629 0.0195514 37.650743 2.42221 0.032797 21.117679Run mode VDD supply current,Vdd=5.0V mA 0 8.5 3.8925355 0.0324917 39.933668 3.9161387 0.0273344 47.755978 3.8700581 0.0178363 72.325549 4.0086 0.0370896 36.026225 3.9045581 0.0305622 42.585908 3.9045581 0.0305622 42.585908 3.8763355 0.0193449 66.793242 4.0598333 0.0436296 31.017438Wait mode VDD supply current,Vdd=3.0V mA 0 2.2 1.1125387 0.0178563 20.300204 1.1112935 0.0163333 22.218492 1.1007226 0.0165177 22.183771 1.1577161 0.0183468 18.936659 1.1108806 0.0183847 19.746792 1.1108806 0.0183847 19.746792 1.0950871 0.0146858 24.855969 1.1649267 0.0197489 17.470591Wait mode VDD supply current,Vdd=5.0V mA 0 3.3 1.6330581 0.0164169 33.157992 1.6357323 0.0143922 37.884617 1.6216 0.0140057 38.593709 1.7016774 0.018004 29.592 1.6320161 0.0161167 33.754095 1.6320161 0.0161167 33.754095 1.6180097 0.0123024 43.839774 1.7081133 0.0197092 26.922891
Osc(untrimed) Mhz 2.4 4 2.7936387 0.0742031 1.7682935 2.966571 0.0958721 1.9698851 2.952269 0.0983597 1.8715967 3.1635516 0.1438536 1.7692792 2.859829 0.0870256 1.7612787 2.8503074 0.0762447 1.9686948 2.99608 0.111511 1.7818266 3.1711167 0.1343253 1.913555Osc(trimed) Mhz 3.04 3.36 3.2316581 0.0137569 3.1097628 3.2147581 0.0085975 5.6311372 3.2130889 0.0101244 4.8368698 3.198771 0.01268 4.1738021 3.2320767 0.0141194 3.0200403 3.2279519 0.014478 3.0402127 3.2121444 0.0120725 4.0824394 3.1985833 0.0096038 5.504202
Output high voltage, ILoad = –10.0 mA,Vdd=5.0V V 2.8 4.3 4.0247871 0.0065668 24.121909 4.0393903 0.0078886 19.463162 4.0176774 0.0087318 18.412555 3.9670516 0.0105741 16.800359 4.0274677 0.0059917 26.287991 4.0274677 0.0059917 26.287991 4.0176258 0.008754 18.367668 3.9586033 0.0137109 13.162202Output high voltage, ILoad = –0.6 mA,Vdd=5.0V V 3.9 4.3 4.4075871 0.0015459 19.926363 4.4095516 0.0017156 17.573821 4.4062613 0.0019894 15.706218 4.3971871 0.00205 16.717556 4.4084774 0.001539 19.823155 4.4084774 0.001539 19.823155 4.4057935 0.002118 14.826268 4.3955333 0.0025847 13.472195Output low voltage, ILoad = 10.0 mA,Vdd=5.0V mV 0 1500 585.14885 7.9784236 24.447137 592.03476 6.0909145 32.399884 607.57919 7.6877898 26.343904 650.66347 5.5376262 39.166209 583.30352 6.140884 31.662299 583.30352 6.140884 31.662299 617.13611 16.136446 12.748286 654.67939 6.3627781 34.297356Output low voltage, ILoad = 0.5 mA,Vdd=5.0V mV 0 400 92.260652 1.2854304 23.92471 93.613029 1.0008955 31.176423 95.947381 1.2841677 24.905206 102.32983 0.8948272 38.11903 92.294003 1.1139506 27.617622 92.294003 1.1139506 27.617622 96.050126 1.6687217 19.186368 102.97688 1.0317046 33.270787
Pullup resistors,Vdd=3.0V kΩ 16 36 20.987682 0.3603549 11.916305 21.835339 0.5953855 6.2802932 22.123717 0.4445098 8.0090666 22.130396 0.8262802 4.3036444 20.939046 0.3051679 14.180063 20.939046 0.3051679 14.180063 22.111392 0.4493216 7.8870966 22.225965 0.8176762 4.2776425Pullup resistors,Vdd=5.0V kΩ 16 36 23.265717 0.3671274 11.786733 24.249116 0.5946568 6.2997774 24.611429 0.4297089 8.3025206 24.531735 0.8262284 4.3424337 23.188852 0.3086211 14.175063 23.188852 0.3086211 14.175063 24.528901 0.4440034 8.0841985 24.647374 0.8278552 4.2568932
Qualification Results for the FAB Site Transfer
From Freescale Sendai FabTo Freescale Chandler Fab
For HC908EY16AFSL-CHD- Fab/Mask M51Z
Objective:
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
Technology:
Package: Design Engr: QUARTZ Tracking #: 206301
Fab / Assembly /
Final Test Sites: Product Engr:
(Signature/Date shown below
may be electronic)
Maskset#:
Rev#: Prod. Package Engr:
PPE Approval (for
DIM/BOM results)
Signature & Date:
Ziep Tran
May-12-2011
Die Size (in mm)
W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy Long
May-11-2011
Part Operating
Temp. Grade: Grade - 40°C to +125 °C Trace/DateCode:
8EME005KDL00
CTCTZP1052A
LOT B LOT C CAB Approval
Signature & Date: 10010014M
Customer Approval
Signature & Date: May be N/A
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
PC
JESD22-
A113
J-STD-020
Preconditioning (PC) :
PC required for SMDs only.
MSL 3 @ 260°C, +5/-0°C (or
document otherwise with
justification)
TEST @ RH pass Generic data:
Q208757, GR8A; 0/693
Q205779, JL16: 0/231
Q202100; GZ60 48LQFP Auto
qual: 0/231
HAST
JESD22-
A101
A110
Highly Accelerated Stress Test
(HAST):
PC before HAST (for SMDs only):
Required @ MSL3, 260oC
HAST = 130°C/85%RH for 96 hrs.
Bias = 5V
Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Generic data:
Q208757, QR8A; 0/231
Q205779, JL16: 0/77
Q202100; GZ60 48LQFP Auto
qual: 0/77
AC
JESD22-
A102
A118
Autoclave (AC):
PC before AC (for SMDs only):
Required @ MSL3, 260oC
AC = 121°C/100%RH/15 psig for
96 hrs
Timed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Generic data:
Q208757, GR8A: 0/231
Q205779, JL16: 0/77
Q202100, GZ60 48LQFP Auto
qual: 0/77
TC
JESD22-
A104
AEC Q100-
Appendix 3
Temperature Cycle (TC):
PC before TC (for SMDs only):
Required
TC = -65°C to 150°C for 500
cycles.
For AEC only: WBP after TC on 5
devices from 1 lot; 2 bonds per
corner and one mid-bond per side
on each device. Record which pins
were used.
TEST @ H 77 0 0 pass Generic data:
Q208757, QR8A: 0/231, 0/5
Q205779, JL16: 0/77, 0/5
Q202100; GZ60 48LQFP Auto
qual: 0/77, 0/5
Tammie Gause/Nancy Long
M51Z
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
3.414X3.327
AEC-Q100/Commercial/Industrial Tier Qual Results
Name or "Varies"
PB or "Varies"
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC
and as required per test conditions.
Wang Lei-R62080
Cao JianChao-B19433
Qualification of 85% UDR SST 68HC908EY16A in FSL-CHD-FAB68HC908EY16A
"EY16A"
U050FXXD /85%UDRSST
Pkg Code 6300/ LQFP 32 7*7*1.4P0.8
FSL-CHD-FAB/FSL-TJN-FM /FSL-TJN-FM
Carlquist Jim-RMSD80
Ziep Tran
were used.
PC + PTC
JESD22-
A105Preconditioning plus Power
Temperature Cycle (PC+PTC):
(See AEC-Q100 for test
applicability criteria)
PC before PC+PTC (for SMDs
only)
PC= MSL @ °C, +5/-0°C
PTC = °C to °C for 1000 cycles;
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
PTC
JESD22-
A105Power Temperature Cycle
(PTC):
(See AEC-Q100 for test
applicability.)
PTC = °C to °C for 1000 cycles;
Bias =
TEST @ RH 0 0 0 Only Required for AEC devices
with maximum rated power > 1
Watt and Delta-Tj > 40C or for
devices designed to drive
inductive loads.
HTSL
JESD22-
A103High Temperature Storage Life
(HTSL):
175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 0 0 pass Generic data:
Q208757, GR8A; 0/77
Q205779, JL16: 0/77
Q202100; GZ60 48LQFP Auto
qual: 0/77
FORMPPAP004XLS 1 of 3 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
Name or "Varies"
PB or "Varies"
68HC908EY16A
"EY16A"
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
HTOL
JESD22-
A108High Temperature Operating
Life (HTOL):
Ta = 125°C for 168hrs
Bias = 6.0V
(Devices incorporating NVM shall
receive 'NVM endurance
preconditioning' prior to this test,
and special NVM test sequencing
after this test)
Timed RO of 96hrs. MAX
TEST @ RHC 77 1 77 8EME005KDL00: 0/77 Generic dada:
Q202119, GZ60 Auto
Qual(0M29Z):0/231@150C,
408Hrs
ELFR
AEC Q100-
008Early Life Failure Rate (ELFR):
Ta = 125°C for 48 hrs
Comm/Ind: 1yr lifetime
Bias = 6V
Timed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic dada:
Q203338, GZ60 IMM
Qual(0M29Z):0/2400
Q202119, GZ60 Auto
Qual(0M29Z):0/2400
EDR
AEC Q100-
005NVM Endurance, Data
Retention, and Operational Life
(EDR):
10K Cycles Flash Endurance @
125oC followed by DRB @ 150
oC
for 1008hrs
Devices incorporating NVM shall
receive 'NVM endurance
preconditioning'(W/E cycling).
Test R, H, C after W/E cycling.
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic dada:
Q202119, GZ60 Auto
Qual(0M29Z):0/231
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
WBS
AEC Q100-
001Wire Bond shear (WBS) Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005KDL00: 0/5, Cpk>1.67 Generic data:
Q208757, GR8A(LQFP32): 0/5,
Cpk>1.67
Q205779, JL16(LQFP32): 0/5,
Cpk>1.67
Q202100; GZ60 48LQFP Auto
qual: 0/6, Cpk>1.67
WBP
MilStd883-
2011Wire Bond Pull (WBP):
Cond. C or D
Cpk = or > 1.67 30 bonds
from minimum 5 units
1 5 8EME005KDL00: 0/5, Cpk>1.67 Generic data:
Q208757, GR8A(LQFP32): 0/5,
Cpk>1.67
Q205779, JL16(LQFP32): 0/5,
Cpk>1.67
Q202100; GZ60 48LQFP Auto
qual: 0/6, Cpk>1.67
SD
JESD22-
B102Solderability (SD):
8hr.(1 hr. for Au-plated leads)
Steam age prior to test.
If production burn-in is done,
samples must also undergo burn-
in prior to SD.
>95% lead coverage
of critical areas
15 0 0 Not required for Fab Site Transfer
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
PD
JESD22-
B100Physical Dimensions(PD):
PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM
&
BOM
Dimensional (DIM):
PPE to verify PD results against
valid 98A drawing.
BOM Verification (BOM):
PPE to verify qual lot ERF BOM is
accurate.
DIM: Not Required
BOM: Done
SBS
AEC-Q100-
010Solder Ball Shear (SBS):
Performed on all solder ball
mounted packages e.g. PBGA,
Chip Scale, Micro Lead Frame
(but NOT Flip Chip).
Two reflow cycles at MSL reflow
temperature before shear.
Cpk = or >1.67 10
(5 balls from a min. of 10
devices)
0 0 For solder ball mounted packages
only; NOT for Flip Chips.
LI
JESD22-
B105Lead Integrity (LI):
Not required for surface mount
devices;
Only required for through-hole
devices.
No lead breakage or
cracks
5
(10 leads from each of 5
parts)
0 0
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments
EM
Electro Migration (EM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TDDB
Time Dependent Dielectric
Breakdown (TDDB)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
HCI
Hot Carrier Injection (HCI) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
SM
Stress Migration (SM) The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
NBTI
Negative Bias Temperature
Instability (NBTI)
The data, test method,
calculations and internal criteria
should be available to the
customer upon request for new
technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 2 of 3 Freescale Rev T
Freescale PN:
Part Name:
Customer Name(s):
PN(s):
Plan or Results:
Revision # & Date:Rev 2.0 - Result
Date: May 5, 2011
Name or "Varies"
PB or "Varies"
68HC908EY16A
"EY16A"
Stress Test Reference Test ConditionsEnd Point
RequirementsMinimum Sample Size # of Lots
Total Units
including
spares
Results
Lot ID-(#Rej/SS)
NA=Not Applicable
Comments or Generic Data
TEST
Freescale
48APre- and Post Functional /
Parametrics (TEST):
For AEC, test software shall meet
requirements of AEC-Q100-007.
Testing performed to the limits of
device specification in temperature
and limit value.
0 Fails All All All Completed This action refers to Final Testing
of all qualification units.
HBM
AEC-Q100-
002 /
JESD22-
A114E Jan
2007
ElectroStatic Discharge/
Human Body Model
Classification (HBM):
Test @ 500/1000/1500/2000 Volts
For AEC, see AEC-Q100-002 for
classification levels.
TEST @ RH
2KV min.
3 units per Voltage level 1 12 8EME005KDL00:
0/3@500V
0/3@1000V
0/3@1500V
0/3@2000V
MM
AEC-Q100-
003
or JESD22
ElectroStatic Discharge/
Machine Model Classification
m(MM):
Test @ 50/100/200 Volts
For AEC, see AEC-Q100-003 for
classification levels.
TEST @ RH
200V min.
3 units per Voltage level 1 9 8EME005KDL00:
0/3@50V
0/3@100V
0/3@200V
CDM
AEC-Q100-
011ElectroStatic Discharge/
Charged Device Model
Classification (CDM):
Test @ 250/500/750 Volts
For AEC, see AEC-Q100-011 for
classification levels.
Timed RO of 96hrs MAX.
TEST @ RH
All pins =/> 500V
3 units per Voltage level 1 9 8EME005KDL00:
0/3@250V
0/3@500V
0/3@750V
LU
JESD78
plus
AEC-Q100-
004 for AEC
Latch-up (LU):
Test per JEDEC JESD78 with the
AEC-Q100-004 requirements for
AEC.
Ta= 125oC
Vsupply = 5.5V Maximum
operating voltage
TEST @ RH 6 1 6 8EME005KDL00:
0/6@125C, 100mA
ED
AEC-Q100-
009,
Freescale
48A spec
Electrical Distribution (ED) TEST @ RHC 30 1 30 Completed, Cpk>1.67
FG
For AEC,
AEC-Q100-
007
Fault Grading (FG) FG shall be = or >
90% for qual units
FG%= No Change
CHAR
For AEC,
AEC-Q003Characterization (CHAR):
Ony performed on new
technologies and part families per
AEC Q003.
For AEC,
AEC-Q100-
006
Electro-Thermally Induced Gate
Leakage (GL):
155°C, 2.0 min, +400/-400 V
TEST @ R 6 1 6 8EME005KDL00: 0/6
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
GL (for
information only)
006 155°C, 2.0 min, +400/-400 V
Per AEC Q100 Rev G, this test is
performed for information only.
Timed RO of 96 hrs MAX.
For all failures, perform unbiased
bake (4hrs/125°C, or 2hrs/150°C)
and retest; recovered units are GL
failures.
EMC
SAE J1752/3
-
Radiated
Emissions
Electromagnetic Compatibility
(EMC)
(see AEC Q100 Appendix 5 for
test applicability; done on case-by-
case basis per customer/Freescale
agreement)
<40dBuV
150KHz - 1GHz
1 1 1 Report available upon request
Die Qual Generic DataQuartz # Mask Set Product-Qual Description / Part
Number(s)
Technology Fab Die Size(mm2) CAB Number
202119/203338 M29Z HC908GZ60 85% UDRSST FSL-CHD-FAB 22.061809 10181326M
32/48 LQFP Package Generic Data
Quartz# Mask Set Product-Qual Description/Part Number
(s)
Die Area
(mm2)
Pkg Code Pkg Description Mold Description EPOXY Description Wire Description
202100 M29Z 908GZ60 22.061809 FSL-TJN-FM LQFP 48 7*7/6089 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
208757 M70Z 908GR8A 14.007536 FSL-TJN-FM LQFP 32 7*7/6300 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
205779 M49Z 908JL16 9.66895168 FSL-TJN-FM LQFP 32 7*7/6300 MC HITACHI 9200HF10M DA SUMITOMO CRM-1064MBL 25um, Au
Date Author
4-Aug-09 T. Gause
27-Aug-09 T. Gause
23-Apr-11 Nancy Long
Rev O Generated Plan
Rev 1.0 Reviewed qual plan with H.P. Wang - TJN Reliability, PE and PM team.
Rev 2.0 Add Qual Result
General Notes:
1 -EY16A Wafer tech code U050FXXD
2 - EY16A BOM: HITACHI 9200HF10M Mold Compound, SUMITOMO CRM-1064MBL Die Attach Epoxy, 25um Gold Wire
Revision Comments
FORMPPAP004XLS 3 of 3 Freescale Rev T
RIDD HV 0 25 12 9402485 0 177849327 23 2400336 15 4747 0 197484 16 078 13 2681 0 165439 23 638 15 4878 0 196138 16 166
(0M51Z) Electrical DistributionReport Date: 23/Apr/11Report Revision: 0
Per AEC Q100 Rev G, ED Appendix Rev B; any key datasheet parameter with Cpk < 1.67 will require justification and FSL NPI Quality approval.
Hot CHD1 Devices Pre HTOL SND Devices Pre HTOL CHD1 Devices Post HTOL SND Devices Post HTOL
Comment
135C 135C 135C 135C
Parameter Name in Datasheet UnitsLower Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk
LVI 3V TRIP V 2.35 2.7 2.547372451 0.037571657 1.75010544 2.54573 0.0410635 1.565252 2.54675 0.0354683 1.74 2.54788 0.0411825 1.6112231LVI 3V REC V 2.45 2.8 2.59910108 0.038161386 1.72185008 2.60646 0.04181 1.5665247 2.608 0.0362015 1.71223655 2.60863 0.0418894 1.2644362LVI 5V TIP V 3.9 4.5 4.22267349 0.060746098 1.76605712 4.20188 0.0566301 1.755 4.205 0.0597654 1.7632445 4.20463 0.0564314 1.745
LVI 5V REC V 4 4.6 4.283271904 0.060638424 1.69138224 4.28208 0.0577697 1.628 4.28563 0.0602503 1.6854225 4.28512 0.0576386 1.649UNTRIM 5V Mhz 4.834 8.064 6.125822595 0.28461826 2.67432432 6.66115 0.368643 1.9666268 6.25455 0.28805 2.6962144 6.67648 0.363991 1.922271UNTRIM 3V Mhz 4.834 8.064 6.123309886 0.280330509 2.69450672 6.64868 0.364956 1.912229 6.25035 0.282992 2.6754368 6.66321 0.361828 1.966529
TRIM 5V Mhz 6.1932 6.7092 6.475757413 0.020981926 3.76099024 6.47154 0.0168546 4.7 6.47261 0.0175846 4.485 6.47046 0.017045 4.669TRIM 3V Mhz 6.1932 6.7092 6.479289333 0.023102289 3.36440608 6.47413 0.0196472 3.988 6.47393 0.0196925 3.982 6.47406 0.0202121 3.878
PULL UP IRQ KΩ 24 48 32.29783173 3.01424144 6.16471408 30.4162 3.1507 5.247 32.35884191 3.70544 4.675 29.3535 0.514157 3.471PULL UP RST KΩ 24 48 30.7653821 2.052146432 9.24959392 31.8116 4.1148 4.684 30.6422049 2.83608 6.759 30.7525 0.743435 3.028
RIDD HV mA 0 25 13.20171149 0.178695979 22.63859808 15.7368 0.200829 15.375 13.5532 0.152152 25.077 15.7501 0.19946 15.458WIDD HV mA 0 7 6.02209515 0.110816513 3.16258208 6.06432 0.126714 2.461 6.18478 0.106526 2.551 6.0677 0.13428 2.314
SIDD LVI ON HV uA 0 300 99.66472768 3.484935373 9.61994096 104.401 2.38253 14.606 102.496 2.48596 13.743 104.561 2.43483 14.315SIDD LVI OFF HV nA 0 30000 492.5211984 83.01828416 1.99603936 1180.12 359.354 1.095 517.76 96.18 1.97432475 1248.63 354.066 1.176
RIDD LV mA 0 8 3.744047115 0.098509285 12.78454128 5.09244 0.106211 9.125 3.7036 0.114133 10.817 5.09717 0.108645 8.906WIDD LV mA 0 3.5 1.79732345 0.077416659 7.53711728 3.17878 0.110021 0.973 1.77436 0.0766604 7.503 3.18687 0.108909 0.958
SIDD LVI ON LV uA 0 200 81.43870862 1.861614485 14.71498784 87.0711 2.35627 12.318 80.1738 1.74618 15.305 87.142 2.40751 12.065SIDD LVI OFF LV nA 0 18000 303.4908218 75.86866896 1.74515696 731.663 198.8 1.7541227 332.975 99.3386 1.7332117 705.437 195.254 1.81223204
Room CHD1 Devices Pre HTOL SND Devices Pre HTOL CHD1 Devices Post HTOL SND Devices Post HTOL
Comment
25C 25C 25C 25C
Parameter Name in Datasheet Units Low Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std CpkLVI 3V TRIP V 2.35 2.7 2.522629966 0.036424691 1.74551584 2.54331 0.0410244 1.65541273 2.53242 0.0325098 1.718 2.54545 0.0411434 1.6112252LVI 3V REC V 2.45 2.8 2.584842214 0.037228455 1.7774488 2.60398 0.0417703 1.6225229 2.59293 0.0328434 1.7451 2.60614 0.0418496 1.6559244LVI 5V TIP V 3.9 4.5 4.203379494 0.059919729 1.67211184 4.19788 0.0565762 1.755 4.19734 0.0587623 1.6871123 4.20063 0.0563778 1.77
LVI 5V REC V 4 4.6 4.274633837 0.060517128 1.754597184 4.27801 0.0577148 1.711606 4.27655 0.0597095 1.7324544 4.28105 0.0575838 1.7223627UNTRIM 5V Mhz 4.834 8.064 6.10761807 0.283770599 2.745716928 6.59454 0.364956 1.9765342 6.20815 0.301212 2.7521 6.60971 0.360351 1.9112345UNTRIM 3V Mhz 4.834 8.064 6.105115453 0.279494957 2.747634256 6.5822 0.361963 1.966565 6.1998 0.296033 2.7532438 6.59657 0.35821 1.922366
TRIM 5V Mhz 6.1932 6.7092 6.456352035 0.02113622 4.04253472 6.47283 0.0166861 4.268 6.45584 0.0204789 4.124 6.40575 0.0168745 4.199TRIM 3V Mhz 6.1932 6.7092 6.459863773 0.023254161 3.62374992 6.47339 0.0194507 3.705 6.45973 0.0243002 3.422 6.40932 0.02001 3.62211
PULL UP IRQ KΩ 24 48 30.81930702 3.494784384 5.56126032 29.084 3.2951 4.149 30.94808037 3.40458 5.804 28.0677 0.491636 2.758PULL UP RST KΩ 24 48 30.14931434 2.946832224 6.029492 30.3597 4.3116 3.808 29.54479528 2.34572 7.225 29.3488 0.709502 2.513
RIDD HV mAmA 0 25 12 9402485. 0 177849327. 23 2400336. 15 4747. 0 197484. 16 078. 13 2681. 0 165439. 23 638. 15 4878. 0 196138. 16 166.WIDD HV mA 0 7 5.90284744 0.109630797 3.5621936 5.85021 0.12224 3.135 6.00603 0.090048 3.679 5.85346 0.129539 2.951123
SIDD LVI ON HV uA 0 240 96.27105712 3.433732624 9.43123552 100.715 2.29841 14.606 98.5752 2.27769 14.43 100.87 2.34886 14.31221SIDD LVI OFF HV nA 0 2000 879.3673504 282.0086752 1.99603936 1029.4 313.461 1.032 918.235 285.2933 1.96658724 1089.17 308.849 1.18122334
RIDD LV mA 0 8 3.616534712 0.096419398 12.61702736 5.02445 0.104793 9.465 3.86978 0.110966 11.624 5.02912 0.107194 9.23822111WIDD LV mA 0 3.5 1.816109472 0.074396363 7.75912368 3.13634 0.108552 1.117 1.89198 0.0967208 5.542 3.14432 0.107455 1.10322155
SIDD LVI ON LV uA 0 200 77.76036531 1.891444072 13.82898048 82.7027 2.23805 12.318 79.7924 2.37843 11.183 82.7701 2.28672 12.065SIDD LVI OFF LV nA 0 18000 262.9817176 65.77645984 1.734515696 490.024 133.144 1.227 274.26 56.8817 1.75673021 472.459 130.769 1.204
Cold CHD1 Devices Pre HTOL SND Devices Pre HTOL CHD1 Devices Post HTOL SND Devices Post HTOL
Comment
-40C -40C -40C -40C
Parameter Name in Datasheet Units Low Limit Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std CpkLVI 3V TRIP v 2.35 2.7 2.535818786 0.040471565 1.71992896 2.54089 0.0492042 1.711078 2.54025 0.0471333 1.711213 2.53988 0.0502623 1.8122062LVI 3V REC v 2.45 2.8 2.598888786 0.041036571 1.72360064 2.60237 0.047855 1.7061 2.6025 0.046958 1.776083 2.60247 0.0513878 1.722989LVI 5V TIP v 3.9 4.5 4.202521742 0.065464137 1.72578944 4.19623 0.0627862 1.573122 4.19525 0.066905 1.866471 4.19538 0.0669995 1.612227
LVI 5V REC v 4 4.6 4.26550168 0.065724894 1.74279048 4.27881 0.0629265 1.477112 4.277 0.0675007 1.7665368 4.278 0.066894 1.385UNTRIM 5V Mhz 4.834 8.064 6.077939851 0.30616499 2.71791072 6.61029 0.445754 1.68711 6.05986 0.244828 2.1224669 6.67219 0.432966 1.654072UNTRIM 3V Mhz 4.834 8.064 6.068706403 0.301874212 2.7269928 6.57596 0.438569 1.71131111 6.05858 0.239865 2.13321702 6.63514 0.425485 1.721119
TRIM 5V Mhz 6.1932 6.7092 6.479864531 0.044091379 1.75889616 6.47101 0.0197787 4.11014 6.47046 0.01873 4.249 6.46996 0.0178807 4.4611234TRIM 3V Mhz 6.1932 6.7092 6.474284477 0.025753852 2.95268512 6.47166 0.0236997 3.341 6.47449 0.021401 3.656 6.46802 0.0251399 3.198
PULL UP IRQ KΩ 24 48 30.48826521 3.557450736 5.63391696 27.86359 4.396 2.4592231 30.56540441 3.44722 5.517 26.8927 0.641485 1.503PULL UP RST KΩ 24 48 29.13627522 2.99759096 5.71464656 29.03453 3.9965 3.3932131 28.94005725 2.64737 5.912 27.9818 0.501757 2.645
RIDD HV mA 0 25 12.63852162 0.277207282 15.27605856 15.2126 0.210827 15.475 13.1073 0.175886 22.539 15.2285 0.208168 15.647WIDD HV mA 0 7 6.005636403 0.104642717 3.40174352 5.63609 0.175011 2.5981122 5.97417 0.111717 3.061 5.65325 0.18764 2.392
SIDD LVI ON HV uA 0 300 95.51421712 2.672391949 12.02265568 96.762 5.00334 6.4462213 99.203 1.43688 23.014 96.48 2.53831 12.67SIDD LVI OFF HV nA 0 30000 440.3900592 88.98218336 1.865048 406.65 251.726 1.5382131 473.31 67.2 2.348 342.5 321.108 1.356
RIDD LV mA 0 8 3.669372235 0.105321854 11.71891056 4.91573 0.104975 9.79412 3.73022 0.09222 13.483 4.91858 0.104925 9.789WIDD LV mA 0 3.5 1.758028317 0.093308281 6.3372736 3.05352 0.115092 1.29312 1.79539 0.0858893 6.616 3.05871 0.117805 1.249
SIDD LVI ON LV uA 0 200 77.20595478 2.710728418 9.58058528 76.5227 2.48223 10.276 81.2024 1.56627 17.281 76.5848 2.56938 9.936SIDD LVI OFF LV nA 0 18000 266.5427736 92.359708 1.86178848 219.461 73.035 1.711002 285.168 69.1588 1.87444326 175.984 34.79 1.686
Qualification Results for the FAB Site Transfer
From Freescale Sendai FabTo Freescale Chandler Fab
For HC908QT/QY4A/Nitron SOGFSL-CHD- Fab/Mask M82Z
FORMPPAP004XLS 1 of 15 Freescale Rev T
Objective:Freescale PN:
Part Name:Customer Name(s):
PN(s):Plan or Results:
Revision # & Date:See Revision History
Technology: Package: Design Engr: QUARTZ Tracking #: 199497
Fab / Assembly/Final Test Sites: Product Engr:
(Signature/Date shown below may be electronic)
Maskset#:Rev#: Prod. Package Engr:
PPE Approval (for DIM/BOM results)Signature & Date:
Ziep TranMay-12-2011
Die Size (in mm)W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy LongMay-12-2011
Part OperatingTemp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT AME005EKQ00CTTR1046A
LOT B LOT C CAB Approval Signature & Date:
10020104M May-26-2011
Customer ApprovalSignature & Date: May be N/A
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
PC
JESD22-A113
J-STD-020
Preconditioning (PC) :PC required for SMDs only.MSL 3 @ 260°C, +5/-0°C (or document otherwise with justification)
TEST @ RH LotA: 0/77Generic data:
Q202065, QC16: 0/693Q203722, QY4: 0/693Q206298, QB8: 0/231
HAST
JESD22-A101A110
Highly Accelerated Stress Test (HAST):PC before HAST (for SMDs only): Required @ MSL3, 260oCHAST = 130°C/85%RH for 96 hrs.Bias = 5V Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Generic Data:Q202065, QC16: 0/231Q203722, QY4(Nitron Classic): 0/231
AC
JESD22-A102A118
Autoclave (AC):PC before AC (for SMDs only): Required @ MSL3, 260oCAC = 121°C/100%RH/15 psig for 96 hrsTimed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Generic Data:Q202065, Nitron QC16: 0/231Q203722, QY4(Nitron Classic): 0/231
TC
JESD22-A104
AEC Q100-Appendix 3
Temperature Cycle (TC):PC before TC (for SMDs only): RequiredTC = -65°C to 150°C for 500 cycles. For AEC only: WBP after TC on 5 devices from 1 lot; 2 bonds per corner and one mid-bond per side on each device. Record which pins were used.
TEST @ HFor AEC: WBP =/> 3 grams
77 1 77 LotA: 0/77, WP: 0/5, min>3g Generic Data:Q202065, QC16: 0/231Q203722, QY4(Nitron Classic): 0/231Q206298, QB8: 0/231
PC + PTC
JESD22-A105
Preconditioning plus Power Temperature Cycle (PC+PTC):(See AEC-Q100 for test applicability criteria) PC before PC+PTC (for SMDs only)PC= MSL @ °C, +5/-0°CPTC = °C to °C for 1000 cycles;Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated power > 1 Watt and Delta-Tj > 40C or for devices designed to drive inductive loads.
PTC
JESD22-A105
Power Temperature Cycle (PTC):(See AEC-Q100 for test applicability.)PTC = °C to °C for 1000 cycles;Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated power > 1 Watt and Delta-Tj > 40C or for devices designed to drive inductive loads.
HTSL
JESD22-A103
High Temperature Storage Life (HTSL):150°C for 168hrs, 504hrs and 1000 hrs or 175oC for 168hrs and 500 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 0 0 pass Generic Data:Q202065, QC16: 0/77Q203722, QY4(Nitron Classic): 0/77Q206298, QB8: 0/77
Qualification of 85% UDR SST HC908QY4A/QT4A in CHDHC908QY4A/QT4A"Nitron SOG"
U050FXXD /85%UDRSST2003 /SOIC 16W Jim Carlquist - RMSD80
"Varies""Varies"
Zhao Rixing-B21624
Ziep Tran - RSJP50
Tammie Gause - RA7914/Nancy Long - B07252
AEC-Q100F/Commercial/Industrial Qual Results
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC and as required per test conditions.
M82Z0
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
2.383 x 2.315
FSL-CHD-FAB/FSL-TJN-FM/(FSL-TJN-FM/KESC)
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
FORMPPAP004XLS 2 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
HTOL
JESD22-A108
High Temp Op Life;10K Flash W/E Cycling (125C) +HTOL, 168hr (MC readpoint),Ta = 125°C,Bias =6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 1 77 LotA: 0/77 Generic Data:
Q202069, QC16: 0/231@125C, 6V, 1008HrsQ203737, QB8: 0/77@125C, 6V, 1008Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):Ta = 125°C for 48 hrs
Bias = 6VTimed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic Data:
Q202069, QC16: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and Operational Life (EDR):
10K W/E cycling @ 175oC for 504 hrs
Timed RO of 96hrs. MAX
TEST @ RHC 77 1 77 LotA: 0/77 Generic Data:Q202069, QC16: 0/231@150C, 1008Hrs
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bondsfrom minimum 5 units
1 5 LotA: 0/5, Cpk>1.67 PE to include this requirement in the ERF so that the data is collected during assembly
WBP
MilStd883-2011
Wire Bond Pull (WBP):Cond. C or D
Cpk = or > 1.67 30 bondsfrom minimum 5 units
1 5 LotA: 0/5, Cpk>1.67 PE to include this requirement in the ERF so that the data is collected during assembly
SD
JESD22-B102
Solderability (SD):8hr.(1 hr. for Au-plated leads) Steam age prior to test.If production burn-in is done, samples must also undergo burn-in prior to SD.
>95% lead coverage of critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-B100
Physical Dimensions(PD):PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM&
BOM
Dimensional (DIM):PPE to verify PD results against valid 98A drawing.BOM Verification (BOM):PPE to verify qual lot ERF BOM is accurate.
DIM: Not RequiredBOM: Done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):Performed on all solder ball mounted packages e.g. PBGA, Chip Scale, Micro Lead Frame (but NOT Flip Chip).Two reflow cycles at MSL reflow temperature before shear.
Cpk = or >1.67 10(5 balls from a min. of 10
devices)
0 0 For solder ball mounted packages only; NOT for Flip Chips.
LI
JESD22-B105
Lead Integrity (LI):Not required for surface mount devices;Only required for through-hole devices.
No lead breakage or cracks
5(10 leads from each of 5 parts)
0 0
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments
EM
Electro Migration (EM) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
FORMPPAP004XLS 3 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):For AEC, test software shall meet requirements of AEC-Q100-007. Testing performed to the limits of device specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all qualification units.
HBM
AEC-Q100-002 /JESD22-A114E
Jan 2007
ElectroStatic Discharge/Human Body Model Classification (HBM):
Test @ 500/1000/1500/2000 VoltsFor AEC, see AEC-Q100-002 for classification levels.
TEST @ RH2KV min.
3 units per Voltage level 1 12 LotA:0/3@500V0/3@1000V0/3@1500V0/3@2000V
MM
AEC-Q100-003or JESD22
ElectroStatic Discharge/Machine Model Classification m(MM):Test @ 50/100/150/200 VoltsFor AEC, see AEC-Q100-003 for classification levels.
TEST @ RH200V min.
3 units per Voltage level 1 12 LotA:0/3@50V0/3@100V0/3@150V0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/Charged Device Model Classification (CDM):Test @ 250/500/750 VoltsFor AEC, see AEC-Q100-011 for classification levels.Timed RO of 96hrs MAX.
TEST @ RHAll pins =/> 500V
3 units per Voltage level 1 9 LotA:0/3@250V0/3@500V0/3@750V
LU
JESD78plus
AEC-Q100-004 for AEC
Latch-up (LU):Test per JEDEC JESD78 with the AEC-Q100-004 requirements for AEC.Ta= 125oC, 100mAVsupply = 5.5V Maximum operating voltage
TEST @ RH 6 1 6 LotA: 0/6
EDAEC-Q100-009,Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 30 1 30 Completed, Cpk>1.67
FG For AEC, AEC-Q100-007
Fault Grading (FG) FG shall be = or > 90% for qual units
FG%= No Change
CHARFor AEC, AEC-
Q003Characterization (CHAR):Ony performed on new technologies and part families per AEC Q003.
GL (for information only)
For AEC, AEC-Q100-006
Electro-Thermally Induced Gate Leakage (GL):155°C, 2.0 min, +400/-400 VPer AEC Q100 Rev G, this test is performed for information only.Timed RO of 96 hrs MAX.For all failures, perform unbiased bake (4hrs/125°C, or 2hrs/150°C) and retest; recovered units are GL failures.
TEST @ R 6 1 6 LotA: 0/6
EMC
SAE J1752/3 -Radiated
Emissions
Electromagnetic Compatibility (EMC)(see AEC Q100 Appendix 5 for test applicability; done on case-by-case basis per customer/Freescale agreement)
<40dBuV150KHz - 1GHz
1 1 1 Report available upon request
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M204137 M81Z HC908QB8 85% UDRSST FSL-CHD-FAB 7.2336 10010064M199497 M82Z HC908QY4A 85% UDRSST FSL-CHD-FAB 5.516645 10020104M
Quartz# Mask Set Product-Qual Description/Part Number (s) Die Area(mm2) Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
202065 M80Z HC908QC16 9.61625124 SOIC16 W SOIC 16 W/2003 SUMITOMO G600 ABLEBOND 8290 25 um Au203722 M05Z HC908QY4 7.3136949 SOIC16 W SOIC 16 W/2003 SUMITOMO G600 ABLEBOND 8290 25 um Au206298 M81Z HC908QB8_AUTO 7.2336 SOIC16 W SOIC 16 W/2003 SUMITOMO G600 ABLEBOND 8290 25 um Au
Revision Date Comments AuthorRev O 25-Aug-09 Generated Plan T. GauseRev 1.0 25-Aug-09 Reviewed qual plan with H.P. Wang - TJN Reliability Engr., PE and PM team. T. GauseRev 2.0 2 May, 2011 Add Qual Result Nancy Long
General Notes:1 -Nitron SOG Wafer tech code U050FXXD2 - Nitron SOG BOM: SUMITOMO G600 Mold Compound, ABLEBOND 8290 Die Attach Epoxy, 25um Gold Wire
16 SOIC Pkg Qual Vehicles
Die Qual Vehicles
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
FORMPPAP004XLS 4 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Objective:Freescale PN:
Part Name:Customer Name(s):
PN(s):Plan or Results:
Revision # & Date:See Revision History
Technology: Package: Design Engr: QUARTZ Tracking #: 199498
Fab / Assembly /Final Test Sites: Product Engr:
(Signature/Date shown below may be electronic)
Maskset#:Rev#: Prod. Package Engr:
PPE Approval (for DIM/BOM results)Signature & Date:
Ziep TranMay-12-2011
Die Size (in mm)W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy LongMay-12-2011
Part OperatingTemp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT AME005ELE00
4STTA LOT B LOT C CAB Approval Signature & Date:
10020104M May-26-2011
Customer ApprovalSignature & Date: May be N/A
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
PC
JESD22-A113
J-STD-020
Preconditioning (PC) :PC required for SMDs only.MSL 3 @ 260°C, +5/-0°C (or document otherwise with justification)
TEST @ RH LotA; 0/77 Generic Data:Q202067, Nitron QC16: 0/693Q203721, Nitron Classic: 0/693Q204137, Nitron QB8:0/77
HAST
JESD22-A101A110
Highly Accelerated Stress Test (HAST):PC before HAST (for SMDs only): Required @ MSL3, 260oCHAST = 130°C/85%RH for 96 hrs.Bias = 5V Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Generic Data:Q202067, Nitron QC16: 0/231Q203721, Nitron Classic: 0/231
AC
JESD22-A102A118
Autoclave (AC):PC before AC (for SMDs only): Required @ MSL3, 260oCAC = 121°C/100%RH/15 psig for 96 hrsTimed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Generic Data:Q202067, Nitron QC16: 0/231Q203721, Nitron Classic: 0/231
TC
JESD22-A104
AEC Q100-Appendix 3
Temperature Cycle (TC):PC before TC (for SMDs only): RequiredTC = -65°C to 150°C for 500 cycles. For AEC only: WBP after TC on 5 devices from 1 lot; 2 bonds per corner and one mid-bond per side on each device. Record which pins were used.
TEST @ HFor AEC: WBP =/> 3 grams
77 1 77 LotA: 0/77, WP: 0/5, Min>3g Generic Data:Q202067, Nitron QC16: 0/231, WP: 0/5, Min>3gQ203721, Nitron Classic: 0/231, WP: 0/5, Min>3gQ204137, Nitron QB8:0/77, WP: 0/5, Min>3g
PC + PTC
JESD22-A105
Preconditioning plus Power Temperature Cycle (PC+PTC):(See AEC-Q100 for test applicability criteria) PC before PC+PTC (for SMDs only)PC= MSL @ °C, +5/-0°CPTC = °C to °C for 1000 cycles;Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated power > 1 Watt and Delta-Tj > 40C or for devices designed to drive inductive loads.
PTC
JESD22-A105
Power Temperature Cycle (PTC):(See AEC-Q100 for test applicability.)PTC = °C to °C for 1000 cycles;Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated power > 1 Watt and Delta-Tj > 40C or for devices designed to drive inductive loads.
HTSL
JESD22-A103
High Temperature Storage Life (HTSL):150°C for 1008 hrs or 175oC for 500 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 0 0 pass Generic Data:Q202069, Nitron QC16, EDR: 0/231@150C, 1008HrsQ203721, Nitron Classic: 0/77@175C, 504HrsQ204140, Nitron ROM: 0/77@175C, 504Hrs
GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC and as required per test conditions.
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.
AEC-Q100F/Commercial/Industrial Qual Results
Tammie Gause - RA7914/Nancy Long - B07252
Qualification of 85% UDR SST HC908QY4A/QT4A in CHDHC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
U050FXXD /85%UDRSST6117 /TSSOP 16 4.4*5*1.0P0.65 Jim Carlquist - RMSD80
FSL-CHD-FAB/FSL-TJN-FM/(FSL-TJN-FM/KESC) Zhao Rixing-B21624
M82Z0 Ziep Tran - RSJP50
2.383 x 2.315
FORMPPAP004XLS 5 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
HTOL
JESD22-A108
High Temperature Operating Life (HTOL):Ta = 150°C for 168hrs (AEC MC Rd Pt.)
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231@125C, 6V, 1008HrsQ203737, QB8: 0/77@125C, 6V, 1008HrsQ199497, QY4A(Nitron SOG): 0/77@125C, 6V, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):Ta = 125°C for 48 hrs Comm/Ind: 1yr lifetimeBias = 6VTimed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic Data:
Q202069, QC16: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and Operational Life (EDR):Devices incorporating NVM shall receive 'NVM endurance preconditioning'(W/E cycling). Test R, H, C after W/E cycling.Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:Q202069, QC16: 0/231@150C, 1008Hrs
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bondsfrom minimum 5 units
1 5 LotA: 0/5, Cpk>1.67 PE to include this requirement in the ERF so that the data is collected during assembly
WBP
MilStd883-2011
Wire Bond Pull (WBP):Cond. C or D
Cpk = or > 1.67 30 bondsfrom minimum 5 units
1 5 LotA: 0/5, Cpk>1.67 PE to include this requirement in the ERF so that the data is collected during assembly
SD
JESD22-B102
Solderability (SD):8hr.(1 hr. for Au-plated leads) Steam age prior to test.If production burn-in is done, samples must also undergo burn-in prior to SD.
>95% lead coverage of critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-B100
Physical Dimensions(PD):PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM&
BOM
Dimensional (DIM):PPE to verify PD results against valid 98A drawing.BOM Verification (BOM):PPE to verify qual lot ERF BOM is accurate.
DIM: Not RequiredBOM: Done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):Performed on all solder ball mounted packages e.g. PBGA, Chip Scale, Micro Lead Frame (but NOT Flip Chip).Two reflow cycles at MSL reflow temperature before shear.
Cpk = or >1.67 10(5 balls from a min. of 10
devices)
0 0 For solder ball mounted packages only; NOT for Flip Chips.
LI
JESD22-B105
Lead Integrity (LI):Not required for surface mount devices;Only required for through-hole devices.
No lead breakage or cracks
5(10 leads from each of 5 parts)
0 0
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments
EM
Electro Migration (EM) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
FORMPPAP004XLS 6 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):For AEC, test software shall meet requirements of AEC-Q100-007. Testing performed to the limits of device specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all qualification units.
HBM
AEC-Q100-002 /JESD22-A114E
Jan 2007
ElectroStatic Discharge/Human Body Model Classification (HBM):Test @ 500/1000/1500/2000 VoltsFor AEC, see AEC-Q100-002 for classification levels.
TEST @ RH2KV min.
3 units per Voltage level 0 0 pass Generic dataQ199497, QY4A(Nitron SOG) SOIC16 W: 0/3@500V0/3@1000V0/3@1500V0/3@2000V
MM
AEC-Q100-003or JESD22
ElectroStatic Discharge/Machine Model Classification m(MM):Test @ 50/100/200 VoltsFor AEC, see AEC-Q100-003 for classification levels.
TEST @ RH200V min.
3 units per Voltage level 0 0 pass Generic dataQ199497, QY4A(Nitron SOG) SOIC16 W:0/3@50V0/3@100V0/3@150V0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/Charged Device Model Classification (CDM):Test @ 250/500/750 VoltsFor AEC, see AEC-Q100-011 for classification levels.Timed RO of 96hrs MAX.
TEST @ RHAll pins =/> 500V
3 units per Voltage level 1 9 LotA:0/3@250V0/3@500V0/3@750V
LU
JESD78plus
AEC-Q100-004 for AEC
Latch-up (LU):Test per JEDEC JESD78 with the AEC-Q100-004 requirements for AEC.Ta= 125oCVsupply = TBDV Maximum operating voltage
TEST @ RH 6 0 0 pass Generic dataQ199497, QY4A(Nitron SOG) SOIC16 W: 0/6@100mA
ED
AEC-Q100-009,Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 30 0 0 Completed Done on QY4A(Nitron SOG) SOIC16 W: 0/30
FG
For AEC, AEC-Q100-007
Fault Grading (FG) FG shall be = or > 90% for qual units
FG%= No Change
CHAR
For AEC, AEC-Q003
Characterization (CHAR):Ony performed on new technologies and part families per AEC Q003.
GL (for information only)
For AEC, AEC-Q100-006
Electro-Thermally Induced Gate Leakage (GL):155°C, 2.0 min, +400/-400 VPer AEC Q100 Rev G, this test is performed for information only.Timed RO of 96 hrs MAX.For all failures, perform unbiased bake (4hrs/125°C, or 2hrs/150°C) and retest; recovered units are GL failures.
TEST @ R 6 1 6 LotA: 0/6
EMC
SAE J1752/3 -Radiated
Emissions
Electromagnetic Compatibility (EMC)(see AEC Q100 Appendix 5 for test applicability; done on case-by-case basis per customer/Freescale agreement)
<40dBuV150KHz - 1GHz
1 0 0
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M204137 M81Z HC908QB8 85% UDRSST FSL-CHD-FAB 7.2336 10010064M199497 M82Z HC908QY4A 85% UDRSST FSL-CHD-FAB 5.516645 10020104M
Quartz# Mask Set Product-Qual Description/Part Number (s) Die Area(mm2) Assembly Iste Pkg Description/Code Mold Description EPOXY Description Wire Description
202067 M80Z HC908QC16 9.61625124 TJN TSSOP 16/6117 G700K ABLEBOND 8290 25 um Au203721 M05Z HC908QY4(NITRON) 7.3136949 TJN TSSOP 16/6117 G700K ABLEBOND 8290 25 um Au204137 M81Z HC908QB8_AUTO 7.2336 TJN TSSOP 16/6117 G700K ABLEBOND 8290 25 um Au204140 M62Z Nitron ROM 4.420504 TJN TSSOP 16/6117 G700K ABLEBOND 8290 25 um Au
Revision Date AuthorRev O 25-Aug-09 T. GauseRev 1.0 26-Aug-09 T. GauseRev 2.0 23-Apr-11 Nancy LongAdd Qual Result
Generated Plan Reviewed qual plan with H.P. Wang - TJN Reliability, PE and PM team.
Comments
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
Die Qual Generic Data
16 TSSOP Pkg Qual Generic Data
General Notes:1 -Nitron SOG Wafer tech code U050FXXD2 - Nitron SOG BOM: SUMITOMO G700K Mold Compound, ABLEBOND 8290 Die Attach Epoxy, 25um Gold Wire
FORMPPAP004XLS 7 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Objective:Freescale PN:
Part Name:Customer Name(s):
PN(s):Plan or Results:
Revision # & Date:Rev 1.2 - ResultDate: Apr 2, 2011
Technology: Package: Design Engr: QUARTZ Tracking #: 205713
Fab / Assembly /Final Test Sites: Product Engr:
(Signature/Date shown below may be electronic)
Maskset#:Rev#: Prod. Package Engr:
PPE Approval (for DIM/BOM results)Signature & Date:
Shong L.M.May-9-2011
Die Size (in mm)W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy LongMay-9-2011
Part OperatingTemp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT AN9NJ04803700
XNXX1048LOT B LOT C CAB Approval
Signature & Date:10020104M May-26-2011
Customer ApprovalSignature & Date: May be N/A
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
PC
JESD22-A113
J-STD-020
Preconditioning (PC) :PC required for SMDs only.MSL 3 @ 260°C, +5/-0°C (or document otherwise with justification)
TEST @ RH Not required for PDIP Packages
HAST
JESD22-A101A110
Highly Accelerated Stress Test (HAST):PC before HAST (for SMDs only): Required @ MSL3, 260oCHAST = 130°C/85%RH for 96 hrs.Bias = 5V Timed RO of 48hrs. MAX
TEST @ RH 77 0 0 pass Q203723, HC908QY4(Nitron): 0/231
AC
JESD22-A102A118
Autoclave (AC):PC before AC (for SMDs only): Required @ MSL3, 260oCAC = 121°C/100%RH/15 psig for 96 hrsTimed RO of 2-48hrs. MAX
TEST @ R 77 0 0 pass Q203723, HC908QY4(Nitron): 0/231
TC
JESD22-A104
AEC Q100-Appendix 3
Temperature Cycle (TC):PC before TC (for SMDs only): RequiredTC = -65°C to 150°C for 500 cycles.
TEST @ H 77 1 77 LotA: 0/77 Generic Data:Q203723, HC908QY4(Nitron): 0/231
HTSL
JESD22-A103
High Temperature Storage Life (HTSL):175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 1 77 LotA: 0/77
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC and as required per test conditions.
FSL-CHD-FAB/(NFME)/(FSL-TJN-FM/KESC) Zhao Rixing-B21624
M82Z0 Shong Lee Ming-B21406
2.383 x 2.315 Tammie Gause - RA7914/Nancy Long - B07252
Commercial/Industrial Qual Results
Qualification of 85% UDR SST HC908QY4A/QT4A in CHDHC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
U050FXXD /85%UDRSSTPkg Code 6/16 PDIP Jim Carlquist - RMSD80
FORMPPAP004XLS 8 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
HTOL
JESD22-A108
High Temperature Operating Life (HTOL):Ta = 150°C for 168hrs (AEC MC Rd Pt.)Comm/Ind: 1yr lifetimeBias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231@125C, 6V, 1008HrsQ203737, QB8: 0/77@125C, 6V, 1008HrsQ199497, QY4A(Nitron SOG): 0/77@125C, 6V, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):Ta = 125°C for 48 hrs Comm/Ind: 1yr lifetimeBias = 6VTimed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic Data:
Q202069, QC16: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and Operational Life (EDR):Devices incorporating NVM shall receive 'NVM endurance preconditioning'(W/E cycling). Test R, H, C after W/E cycling.Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:Q202069, QC16: 0/231@150C, 1008Hrs
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bondsfrom minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
WBP
MilStd883-2011
Wire Bond Pull (WBP):Cond. C or D
Cpk = or > 1.67 30 bondsfrom minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
SD
JESD22-B102
Solderability (SD):8hr.(1 hr. for Au-plated leads) Steam age prior to test.If production burn-in is done, samples must also undergo burn-in prior to SD.
>95% lead coverage of critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-B100
Physical Dimensions(PD):PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM&
BOM
Dimensional (DIM):PPE to verify PD results against valid 98A drawing.BOM Verification (BOM):PPE to verify qual lot ERF BOM is accurate.
DIM: Not RequiredBOM: done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):Performed on all solder ball mounted packages e.g. PBGA, Chip Scale, Micro Lead Frame (but NOT Flip Chip).Two reflow cycles at MSL reflow temperature before shear.
Cpk = or >1.67 10(5 balls from a min. of 10
devices)
0 0 For solder ball mounted packages only; NOT for Flip Chips.
LI
JESD22-B105
Lead Integrity (LI):Not required for surface mount devices;Only required for through-hole devices.
No lead breakage or cracks
5(10 leads from each of 5 parts)
0 0
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments
EM
Electro Migration (EM) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 9 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):For AEC, test software shall meet requirements of AEC-Q100-007. Testing performed to the limits of device specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all qualification units.
HBM
AEC-Q100-002 /JESD22-A114E
Jan 2007
ElectroStatic Discharge/Human Body Model Classification (HBM):Test @ 500/1000/1500/2000 VoltsFor AEC, see AEC-Q100-002 for classification levels.
TEST @ RH2KV min.
3 units per Voltage level 0 0 pass Generic dataQ199497, QY4A(Nitron SOG) SOIC16 W: 0/3@500V0/3@1000V0/3@1500V0/3@2000V
MM
AEC-Q100-003or JESD22
ElectroStatic Discharge/Machine Model Classification m(MM):Test @ 50/100/200 VoltsFor AEC, see AEC-Q100-003 for classification levels.
TEST @ RH200V min.
3 units per Voltage level 0 0 pass Generic dataQ199497, QY4A(Nitron SOG) SOIC16 W:0/3@50V0/3@100V0/3@150V0/3@200V
CDM
AEC-Q100-011 ElectroStatic Discharge/Charged Device Model Classification (CDM):Test @ 250/500/750 VoltsFor AEC, see AEC-Q100-011 for classification levels.Timed RO of 96hrs MAX.
TEST @ RHAll pins =/> 500V
3 units per Voltage level 1 9 LotA:0/3@250V0/3@500V0/3@750V
LU
JESD78plus
AEC-Q100-004 for AEC
Latch-up (LU):Test per JEDEC JESD78 with the AEC-Q100-004 requirements for AEC.Ta= 125oCVsupply = TBDV Maximum operating voltage
TEST @ RH 6 0 0 Generic dataQ199497, QY4A(Nitron SOG) SOIC16 W: 0/6@100mA
ED
AEC-Q100-009,Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 5 0 0 Completed Done on QY4A(Nitron SOG) SOIC16 W
FG
For AEC, AEC-Q100-007
Fault Grading (FG) FG shall be = or > 90% for qual units
FG%= No Change
CHAR
For AEC, AEC-Q003
Characterization (CHAR):Ony performed on new technologies and part families per AEC Q003.
GL (for information only)
For AEC, AEC-Q100-006
Electro-Thermally Induced Gate Leakage (GL):155°C, 2.0 min, +400/-400 VPer AEC Q100 Rev G, this test is performed for information only.Timed RO of 96 hrs MAX.For all failures, perform unbiased bake (4hrs/125°C, or 2hrs/150°C) and retest; recovered units are GL failures.
TEST @ R 6 0 0
EMC
SAE J1752/3 -Radiated
Emissions
Electromagnetic Compatibility (EMC)(see AEC Q100 Appendix 5 for test applicability; done on case-by-case basis per customer/Freescale agreement)
<40dBuV150KHz - 1GHz
1 0 0
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number CAB Date202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M204137 M81Z HC908QB8 85% UDRSST FSL-CHD-FAB 7.2336 10010064M199497 M82Z HC908QY4A 85% UDRSST FSL-CHD-FAB 5.516645 10020104M
16 PDIP Generic Data
Quartz# Mask Set Product-Qual Description/Part Number (s) Die Area(mm2) Assembly Site Pkg Description/code Mold Description EPOXY Description Wire Description
203723 M05Z NITRON 7.3136949 NFME PDIP16/0006 HITACHI_CEL1620HF9_18MMx1YIHUA_9005SP-2 25um, Au
Date Author25-Aug-09 T. Gause25-Aug-09 T. Gause12-Oct-09 T. Gause2-Apr, 11 Nancy LongRev 1.2 Add Qual Result
General Notes:1 -Nitron SOG Wafer tech code U050FXXD2 - Nitron SOG BOM: HITACHI_CEL1620HF9_18MMx10.4G_NFME Mold Compound, YIHUA_9005SP-2 Die Attach Epoxy, 25um Gold Wire
Die Qual Vehicles
Revision CommentsRev O Generated Plan Rev 1.0 Reviewed qual plan with H.P. Wang - TJN Reliability Engr., PE and PM team.Rev. 1.1 Changed Assy Site to NFME at the request of Brian Drummond.
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
FORMPPAP004XLS 10 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Objective:Freescale PN:
Part Name:Customer Name(s):
PN(s):Plan or Results:
Revision # & Date:Rev 1.2 - ResultDate: May 2, 2011
Technology: Package: Design Engr: QUARTZ Tracking #: 212342
Fab / Assembly /Final Test Sites: Product Engr:
(Signature/Date shown below may be electronic)
Maskset#:Rev#: Prod. Package Engr:
PPE Approval (for DIM/BOM results)Signature & Date:
Shong L.M.May-9-2011
Die Size (in mm)W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy LongMay-9-2011
Part OperatingTemp. Grade: Grade 1 - 40°C to +125 °C Trace/DateCode:
LOT ANJ04802K00XNXX1048
LOT B LOT C CAB Approval Signature & Date:
10020104M May-26-2011
Customer ApprovalSignature & Date: May be N/A
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
PC
JESD22-A113
J-STD-020
Preconditioning (PC) :PC required for SMDs only.MSL 3 @ 260°C, +5/-0°C (or document otherwise with justification)
TEST @ RH Not required for PDIP Packages
HAST
JESD22-A101A110
Highly Accelerated Stress Test (HAST):PC before HAST (for SMDs only): Required @ MSL3, 260oCHAST = 130°C/85%RH for 96 hrs.Bias = 5V Timed RO of 48hrs. MAX
TEST @ RH 77 1 77 LotA: 0/77 Generic data:Q212274, QVY4(Nitron Loft): 0/77Q203724, QY4(Nitron); 0/77
AC
JESD22-A102A118
Autoclave (AC):PC before AC (for SMDs only): Required @ MSL3, 260oCAC = 121°C/100%RH/15 psig for 96 hrsTimed RO of 2-48hrs. MAX
TEST @ R 77 1 77 LotA: 0/77 Generic data:Q212274, QVY4(Nitron Loft): 0/77Q203724, QY4(Nitron); 0/77
TC
JESD22-A104
AEC Q100-Appendix 3
Temperature Cycle (TC):PC before TC (for SMDs only): RequiredTC = -65°C to 150°C for 500 cycles.
TEST @ H 77 1 77 LotA: 0/77 Generic data:Q212274, QVY4(Nitron Loft): 0/77Q203724, QY4(Nitron); 0/77
PC + PTC
JESD22-A105
Preconditioning plus Power Temperature Cycle (PC+PTC):(See AEC-Q100 for test applicability criteria) PC before PC+PTC (for SMDs only)PC= MSL @ °C, +5/-0°CPTC = °C to °C for 1000 cycles;Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated power > 1 Watt and Delta-Tj > 40C or for devices designed to drive inductive loads.
PTC
JESD22-A105
Power Temperature Cycle (PTC):(See AEC-Q100 for test applicability.)PTC = °C to °C for 1000 cycles;Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated power > 1 Watt and Delta-Tj > 40C or for devices designed to drive inductive loads.
HTSL
JESD22-A103
High Temperature Storage Life (HTSL): 175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH 77 1 77 LotA: 0/77
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC and as required per test conditions.
FSL-CHD-FAB/(NFME)/(FSL-TJN-FM/KESC) Zhao Rixing-B21624
M82Z Shong Lee Ming-B21406
2.383 x 2.315 Tammie Gause - RA7914/Nancy Long - B07252
Commercial/Industrial Qual Results
Qualification of 85% UDR SST HC908QY4A/QT4A in CHDHC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
U050FXXD /85%UDRSSTPkg Code 3/8 PDIP Jim Carlquist - RMSD80
FORMPPAP004XLS 11 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
HTOL
JESD22-A108
High Temperature Operating Life (HTOL):Ta = 150°C for 168hrs
Bias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231@125C, 6V, 1008HrsQ203737, QB8: 0/77@125C, 6V, 1008HrsQ199497, QY4A(Nitron SOG): 0/77@125C, 6V, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):Ta = 125°C for 48 hrs
Bias = 6VTimed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic Data:
Q202069, QC16: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and Operational Life (EDR):Devices incorporating NVM shall receive 'NVM endurance preconditioning'(W/E cycling). Test R, H, C after W/E cycling.Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:Q202069, QC16: 0/231@150C, 1008Hrs
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bondsfrom minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
WBP
MilStd883-2011
Wire Bond Pull (WBP):Cond. C or D
Cpk = or > 1.67 30 bondsfrom minimum 5 units
1 5 LotA: 0/5, Cpk>1.67
SD
JESD22-B102
Solderability (SD):8hr.(1 hr. for Au-plated leads) Steam age prior to test.If production burn-in is done, samples must also undergo burn-in prior to SD.
>95% lead coverage of critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-B100
Physical Dimensions(PD):PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM&
BOM
Dimensional (DIM):PPE to verify PD results against valid 98A drawing.BOM Verification (BOM):PPE to verify qual lot ERF BOM is accurate.
DIM: Not RequiredBOM: done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):Performed on all solder ball mounted packages e.g. PBGA, Chip Scale, Micro Lead Frame (but NOT Flip Chip).Two reflow cycles at MSL reflow temperature before shear.
Cpk = or >1.67 10(5 balls from a min. of 10
devices)
0 0 For solder ball mounted packages only; NOT for Flip Chips.
LI
JESD22-B105
Lead Integrity (LI):Not required for surface mount devices;Only required for through-hole devices.
No lead breakage or cracks
5(10 leads from each of 5 parts)
0 0
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments
EM
Electro Migration (EM) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 12 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):For AEC, test software shall meet requirements of AEC-Q100-007. Testing performed to the limits of device specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all qualification units.
HBM
AEC-Q100-002 /JESD22-A114E
Jan 2007
ElectroStatic Discharge/Human Body Model Classification (HBM):Test @ 500/1000/1500/2000 VoltsFor AEC, see AEC-Q100-002 for classification levels.
TEST @ RH2KV min.
3 units per Voltage level 0 0 pass Generic dataQ199497, QY4A(Nitron SOG) SOIC16 W: 0/3@5000/3@10000/3@15000/3@2000
MM
AEC-Q100-003or JESD22
ElectroStatic Discharge/Machine Model Classification m(MM):Test @ 50/100/200 VoltsFor AEC, see AEC-Q100-003 for classification levels.
TEST @ RH200V min.
3 units per Voltage level 0 0 pass Generic dataQ199497, QY4A(Nitron SOG) SOIC16 W:0/3@500/3@1000/3@1500/3@200
CDM
AEC-Q100-011 ElectroStatic Discharge/Charged Device Model Classification (CDM):Test @ 250/500/750 VoltsFor AEC, see AEC-Q100-011 for classification levels.Timed RO of 96hrs MAX.
TEST @ RHAll pins =/> 500V
3 units per Voltage level 1 9 LotA; LotA:0/3@250V0/3@500V0/3@750V
LU
JESD78plus
AEC-Q100-004 for AEC
Latch-up (LU):Test per JEDEC JESD78 with the AEC-Q100-004 requirements for AEC.Ta= 125oCVsupply = TBDV Maximum operating voltage
TEST @ RH 6 0 0 Generic dataQ199497, QY4A(Nitron SOG) SOIC16 W: 0/6@100mA
ED
AEC-Q100-009,Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 5 0 0 Completed Done on QY4A(Nitron SOG) SOIC16 W: 0/5
FG
For AEC, AEC-Q100-007
Fault Grading (FG) FG shall be = or > 90% for qual units
FG%= No Change
CHAR
For AEC, AEC-Q003
Characterization (CHAR):Ony performed on new technologies and part families per AEC Q003.
GL (for information only)
For AEC, AEC-Q100-006
Electro-Thermally Induced Gate Leakage (GL):155°C, 2.0 min, +400/-400 VPer AEC Q100 Rev G, this test is performed for information only.Timed RO of 96 hrs MAX.For all failures, perform unbiased bake (4hrs/125°C, or 2hrs/150°C) and retest; recovered units are GL failures.
TEST @ R 6 0 0
EMC
SAE J1752/3 -Radiated
Emissions
Electromagnetic Compatibility (EMC)(see AEC Q100 Appendix 5 for test applicability; done on case-by-case basis per customer/Freescale agreement)
<40dBuV150KHz - 1GHz
1 0 0
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M204137 M81Z HC908QB8 85% UDRSST FSL-CHD-FAB 7.2336 10010064M199497 M82Z HC908QY4A 85% UDRSST FSL-CHD-FAB 5.516645 10020104M
8 PDIP Pkg Qual VehiclesQuartz# Mask Set Product-Qual Description/Part Number (s) Die Area
(mm2)Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
212342 M82Z 908QY4A(Nitron SOG) 5 NFME PDIP 8/0003 MC_HITACHI_CEL1620HF9 DA_YIZTECH_9144 25um Au212274 M78Z 908QVY4(Nitron Loft) 5.8949 NFME PDIP 8/0003 MC_HITACHI_CEL1620HF9 DA_YIZTECH_9144 25um Au203724 M05Z 908QY4(Nitron) 7.3136949 NFME PDIP 8/0003 MC_HITACHI_CEL1620HF9 DA_YIZTECH_9144 25um Au
Date Author25-Aug-09 T. Gause25-Aug-09 T. Gause16 Oct. 2009 T. Gause2 May, 2011 Nancy LongRev1.2 Add Qual Result
General Notes:1 -Nitron SOG Wafer tech code U050FXXD2 - Nitron SOG BOM: HITACHI_CEL1620HF9 Mold Compound, YIZTECH_9144 Die Attach Epoxy, 25um Gold Wire
Die Qual Vehicles
Revision CommentsRev O Generated Plan Rev 1.0 Reviewed qual plan with H.P. Wang - TJN Reliability Engr., PE and PM team.Rev 1.1 Removed CDM which will be done on 16 PDIP.
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
FORMPPAP004XLS 13 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Objective:Freescale PN:
Part Name:Customer Name(s):
PN(s):Plan or Results:
Revision # & Date:Rev 1.2 - ResultDate: May 5, 2011
Technology: Package: Design Engr: QUARTZ Tracking #: 205706
Fab / Assembly /Final Test Sites: Product Engr:
(Signature/Date shown below may be electronic)
Maskset#:Rev#: Prod. Package Engr:
PPE Approval (for DIM/BOM results)Signature & Date:
Shong L.M.May-9-2011
Die Size (in mm)W x L x T NPI PRQE: NPI PRQE Approval Signature & Date:
Nancy LongMay-9-2011
Part OperatingTemp. Grade: Grade - 40°C to +125 °C Trace/DateCode:
LOT AN9NJ04801X00
XNXX048
LOT BN9NJ04804V00
XNXX048LOT C CAB Approval
Signature & Date:10020104M May-26-2011
Customer ApprovalSignature & Date: May be N/A
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
PC
JESD22-A113
J-STD-020
Preconditioning (PC) :PC required for SMDs only.MSL 3 @ 260°C, +5/-0°C (or document otherwise with justification)
TEST @ RH LotA: 0/231LotB: 0/231
Generic dataQ203725, QY4(Nitron): 0/231
HAST
JESD22-A101A110
Highly Accelerated Stress Test (HAST):PC before HAST (for SMDs only): Required @ MSL3, 260oCHAST = 130°C/85%RH for 96 hrs.Bias = 5V Timed RO of 48hrs. MAX
TEST @ RH 77 2 154 LotA: 0/77LotB: 0/77
Generic dataQ203725, QY4(Nitron): 0/77
AC
JESD22-A102A118
Autoclave (AC):PC before AC (for SMDs only): Required @ MSL3, 260oCAC = 121°C/100%RH/15 psig for 96 hrsTimed RO of 2-48hrs. MAX
TEST @ R 77 2 154 LotA: 0/77LotB: 0/77
Generic dataQ203725, QY4(Nitron): 0/77
TC
JESD22-A104
AEC Q100-Appendix 3
Temperature Cycle (TC):PC before TC (for SMDs only): RequiredTC = -65°C to 150°C for 500 cycles.
TEST @ H 77 2 154 LotA: 0/77LotB: 0/77
Generic dataQ203725, QY4(Nitron): 0/77
PC + PTC
JESD22-A105
Preconditioning plus Power Temperature Cycle (PC+PTC):(See AEC-Q100 for test applicability criteria) PC before PC+PTC (for SMDs only)PC= MSL @ °C, +5/-0°CPTC = °C to °C for 1000 cycles;Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated power > 1 Watt and Delta-Tj > 40C or for devices designed to drive inductive loads.
PTC
JESD22-A105
Power Temperature Cycle (PTC):(See AEC-Q100 for test applicability.)PTC = °C to °C for 1000 cycles;Bias =
TEST @ RH 0 0 0 Only Required for AEC devices with maximum rated power > 1 Watt and Delta-Tj > 40C or for devices designed to drive inductive loads.
HTSL
JESD22-A103
High Temperature Storage Life (HTSL):175oC for 504 hrs
Timed RO = 96hrs. MAX
TEST @ RH(C) 77 1 77 LotA: 0/77 Generic dataQ203725, QY4(Nitron): 0/77
TESTS HIGHLIGHTED IN YELLOW WILL BE PERFORMED FOR THIS STUDY
This testing is performed by Freescale Reliability Lab (FSL-TJN-FM) unless otherwise noted in the Comments.GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS
All surface mount devices prior to THB, HAST, AC, UHST, TC, PC+PTC and as required per test conditions.
FSL-CHD-FAB/(NFME)/(FSL-TJN-FM/KESC) Zhao Rixing-B21624
M82Z0 Shong Lee Ming-B21406
2.383 x 2.315 Tammie Gause - RA7914/Nancy Long - B07252
Commercial/Industrial Qual Results
Qualification of 85% UDR SST HC908QY4A/QT4A in CHDHC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
U050FXXD /85%UDRSST6003 /SOEIAJ 8 T2 MFP Jim Carlquist - RMSD80
FORMPPAP004XLS 14 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
HTOL
JESD22-A108
High Temperature Operating Life (HTOL):Ta = 150°C for 168hrs (AEC MC Rd Pt.)Comm/Ind: 1yr lifetimeBias = 6V
Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:
Q202069, QC16: 0/231@125C, 6V, 1008HrsQ203737, QB8: 0/77@125C, 6V, 1008HrsQ199497, QY4A(Nitron SOG): 0/77@125C, 6V, 168Hrs
ELFR
AEC Q100-008 Early Life Failure Rate (ELFR):Ta = 125°C for 48 hrs Comm/Ind: 1yr lifetimeBias = 6VTimed RO of 48 hrs MAX
TEST @ RH 800 0 0 pass Generic Data:
Q202069, QC16: 0/2400
EDR
AEC Q100-005 NVM Endurance, Data Retention, and Operational Life (EDR):Devices incorporating NVM shall receive 'NVM endurance preconditioning'(W/E cycling). Test R, H, C after W/E cycling.Timed RO of 96hrs. MAX
TEST @ RHC 77 0 0 pass Generic Data:Q202069, QC16: 0/231@150C, 1008Hrs
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
WBS
AEC Q100-001 Wire Bond shear (WBS) Cpk = or > 1.67 30 bondsfrom minimum 5 units
1 5 LotA: 0/5, Cpk>1.67LotB: 0/5, Cpk>1.67
WBP
MilStd883-2011
Wire Bond Pull (WBP):Cond. C or D
Cpk = or > 1.67 30 bondsfrom minimum 5 units
1 5 LotA: 0/5, Cpk>1.67LotB: 0/5, Cpk>1.67
SD
JESD22-B102
Solderability (SD):8hr.(1 hr. for Au-plated leads) Steam age prior to test.If production burn-in is done, samples must also undergo burn-in prior to SD.
>95% lead coverage of critical areas
15 0 0 Not required for Fab Site Transfer
PD
JESD22-B100
Physical Dimensions(PD):PD per FSL 98A drawing
Cpk = or > 1.67 10 0 0 Not required for Fab Site Transfer
DIM&
BOM
Dimensional (DIM):PPE to verify PD results against valid 98A drawing.BOM Verification (BOM):PPE to verify qual lot ERF BOM is accurate.
DIM: Not RequiredBOM: Done
SBS
AEC-Q100-010 Solder Ball Shear (SBS):Performed on all solder ball mounted packages e.g. PBGA, Chip Scale, Micro Lead Frame (but NOT Flip Chip).Two reflow cycles at MSL reflow temperature before shear.
Cpk = or >1.67 10(5 balls from a min. of 10
devices)
0 0 For solder ball mounted packages only; NOT for Flip Chips.
LI
JESD22-B105
Lead Integrity (LI):Not required for surface mount devices;Only required for through-hole devices.
No lead breakage or cracks
5(10 leads from each of 5 parts)
0 0
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments
EM
Electro Migration (EM) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
TDDB
Time Dependent Dielectric Breakdown (TDDB) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
HCI
Hot Carrier Injection (HCI) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
SM
Stress Migration (SM) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
NBTI
Negative Bias Temperature Instability (NBTI) The data, test method, calculations and internal criteria should be available to the customer upon request for new technologies.
TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS
TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS
TEST GROUP D - DIE FABRICATION RELIABILITY TESTS
FORMPPAP004XLS 15 of 15 Freescale Rev T
Freescale PN: Part Name:
Customer Name(s): PN(s):
Plan or Results:Revision # & Date:
See Revision History
HC908QY4A/QT4A"Nitron SOG"
"Varies""Varies"
Stress Test Reference Test Conditions End Point Requirements Minimum Sample Size # of Lots
Total Unitsincluding
spares
ResultsLot ID-(#Rej/SS)
NA=Not ApplicableComments or Generic Data
TEST
Freescale 48A Pre- and Post Functional / Parametrics (TEST):For AEC, test software shall meet requirements of AEC-Q100-007. Testing performed to the limits of device specification in temperature and limit value.
0 Fails All All All Completed This action refers to Final Testing of all qualification units.
HBM
AEC-Q100-002 /JESD22-A114E
Jan 2007
ElectroStatic Discharge/Human Body Model Classification (HBM):Test @ 500/1000/1500/2000 VoltsFor AEC, see AEC-Q100-002 for classification levels.
TEST @ RH2KV min.
3 units per Voltage level 0 0 pass Generic dataQ199497, QY4A(Nitron SOG) SOIC16 W: 0/3@5000/3@10000/3@15000/3@2000
MM
AEC-Q100-003or JESD22
ElectroStatic Discharge/Machine Model Classification m(MM):Test @ 50/100/200 VoltsFor AEC, see AEC-Q100-003 for classification levels.
TEST @ RH200V min.
3 units per Voltage level 0 0 pass Generic dataQ199497, QY4A(Nitron SOG) SOIC16 W:0/3@500/3@1000/3@1500/3@200
CDM
AEC-Q100-011 ElectroStatic Discharge/Charged Device Model Classification (CDM):Test @ 250/500/750 VoltsFor AEC, see AEC-Q100-011 for classification levels.Timed RO of 96hrs MAX.
TEST @ RHAll pins =/> 500V
3 units per Voltage level 0 0
LU
JESD78plus
AEC-Q100-004 for AEC
Latch-up (LU):Test per JEDEC JESD78 with the AEC-Q100-004 requirements for AEC.Ta= 125oCVsupply = TBDV Maximum operating voltage
TEST @ RH 6 0 0 Generic dataQ199497, QY4A(Nitron SOG) SOIC16 W: 0/6@100mA
ED
AEC-Q100-009,Freescale 48A
spec
Electrical Distribution (ED) TEST @ RHC 5 0 0 Completed Done on QY4A(Nitron SOG) SOIC16 W:
FG
For AEC, AEC-Q100-007
Fault Grading (FG) FG shall be = or > 90% for qual units
FG%= No Change
CHAR
For AEC, AEC-Q003
Characterization (CHAR):Ony performed on new technologies and part families per AEC Q003.
GL (for information only)
For AEC, AEC-Q100-006
Electro-Thermally Induced Gate Leakage (GL):155°C, 2.0 min, +400/-400 VPer AEC Q100 Rev G, this test is performed for information only.Timed RO of 96 hrs MAX.For all failures, perform unbiased bake (4hrs/125°C, or 2hrs/150°C) and retest; recovered units are GL failures.
TEST @ R 6 0 0
EMC
SAE J1752/3 -Radiated
Emissions
Electromagnetic Compatibility (EMC)(see AEC Q100 Appendix 5 for test applicability; done on case-by-case basis per customer/Freescale agreement)
<40dBuV150KHz - 1GHz
1 0 0
Quartz # Mask Set Product-Qual Description / Part Number(s) Technology Fab Die Size(mm2) CAB Number202069 M80Z HC908QC16 85% UDRSST FSL-CHD-FAB 9.61625124 10272023M204137 M81Z HC908QB8 85% UDRSST FSL-CHD-FAB 7.2336 10010064M199497 M82Z HC908QY4A 85% UDRSST FSL-CHD-FAB 5.516645 10020104M
Quartz# Mask Set Product-Qual Description/Part Number (s) Die Area(mm2) Assembly Site Pkg Description/Code Mold Description EPOXY Description Wire Description
203725 M05Z 68HC908QY4 (Nitron) 7.315 NFME SOEIAJ 8/6003 HITACHI_CEL9210HFVL ABLESTIK_ABL8352L 25um Au
Date Author25-Aug-09 T. Gause25-Aug-09 T. Gause29-Sep-09 T. Gause5-May-11 Nancy Long
General Notes:1 -Nitron SOG Wafer tech code U050FXXD2 - Nitron SOG BOM: HITACHI_CEL9210HFVL Mold Compound, ABLESTIK_ABL8352L Die Attach Epoxy, 25um Gold Wire
Die Qual Vehicles
Revision Comments
Rev 1.2 Add Qual Result
Rev O Generated Plan Rev 1.0 Reviewed qual plan with H.P. Wang - TJN Reliability Engr., PE and PM team.Rev 1.1 Added pkg qual stress requirements to align to 8 SOEIAJ package qual strategy.
TEST GROUP E - ELECTRICAL VERIFICATION TESTS
uA N/A 4 0.444052 0.1313 6.4873 0.34174 0.0962 9.2132 0.37122 0.0969 9.0392 0.483944 0.0938 8.94165 PASS PASS
stop_idd_3v uA N/A 4 0.450442 0.1071 7.9361 0.46723 0.0833 10.139 0.42274 0.1175 7.3134 0.481817 0.09265 9.06012 PASS PASS
(Nitron_SOG M82Z) Electrical Distribution
Report Date: 18/May/2011Report Revision: 0
Per AEC Q100 Rev G, ED Appendix Rev B; any key datasheet parameter with Cpk < 1.67 will require justification and FSL NPI Quality approval.
Hot CHD Devices Pre HTOL CHD Devices Post HTOL SND Devices Pre HTOL SND Devices Post HTOL Pre CHD
mean+-1 SND sigma or +-10%
Post CHD
mean+-1 SND sigma or +-10%
Comment
125C 125C 125C 125C
Parameter Name in Datasheet Units
Lower Limit
Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk
voh_min_load_me_5v V 3.9 4.5 4.214009 0.0031 30.302 4.22202 0.0031 29.921 4.23689 0.0026 33.998 4.22006 0.0025 37.3435 PASS PASSvoh_max_load_me_5v V 2.8 5.5 4.014199 0.0051 79.375 4.02317 0.0089 45.558 4.01916 0.009 45.112 4.020913 0.00659 61.7446 PASS PASSvoh_min_load_me_3v V 2.28 2.8 2.548821 0.0045 18.627 2.54713 0.0016 52.39 2.55147 0.0014 57.67 2.54587 0.0014 60.4173 PASS PASSvoh_max_load_me_3v V 1.58 3.3 2.405034 0.0111 24.863 2.41728 0.0047 59.783 2.4104 0.0054 51.021 2.41521 0.00405 68.6886 PASS PASS
vol_min_load_5V_PTA5 V 0 0.4 0.058707 0.002 9.9522 0.05332 0.0021 8.5706 0.05872 0.0015 10.793 0.055244 0.00212 8.66882 PASS PASSvol_max_load_me_5v V 0 1.5 0.30923 0.0079 13.044 0.31389 0.0081 12.938 0.31757 0.0085 12.494 0.321543 0.00823 13.02 PASS PASS
vol_min_load_3V_PTA5 V 0 0.3 0.023691 0.0008 9.437 0.02392 0.0006 13.239 0.02373 0.0007 12.164 0.022205 0.00061 12.0573 PASS PASSvol_max_load_me_3v V 0 1 0.229856 0.0069 11.044 0.23432 0.009 8.6908 0.23692 0.0068 11.571 0.244873 0.00899 9.08216 PASS PASS
run_idd_5v mA 0 7 5.063385 0.0789 6.0727 4.94757 0.0656 7.8831 4.81343 0.0396 14.206 4.94203 0.06799 7.6387 PASS PASSrun_idd_3v mA 0 3.8 2.407038 0.0903 3.7412 2.39873 0.0686 4.9609 2.25651 0.0589 6.5829 2.39719 0.06321 5.39359 PASS PASSwait_idd_5v mA 0 2.5 1.681201 0.0208 5.107 1.70401 0.02 4.9416 1.61881 0.018 7.053 1.701843 0.01885 5.27372 PASS PASSwait_idd_3v mA 0 1.75 1.072752 0.0164 3.6039 1.08795 0.0189 2.8524 1.03571 0.0149 4.8086 1.086707 0.01721 3.16201 PASS PASSstop_idd_5v uA N/A 5 0.72747 0.1332 6.9359 0.60686 0.1298 7.4307 0.46559 0.1301 7.7757 0.546522 0.22631 4.35014 PASS PASSstop_idd_3v uA N/A 4 0.601414 0.1364 5.8631 0.54751 0.1064 7.682 0.48254 0.1474 5.6936 0.584705 0.20047 4.01611 PASS PASS
Cold CHD Devices Pre HTOL CHD Devices Post HTOL SND Devices Pre HTOL SND Devices Post HTOL Pre CHD
mean+-1 SND sigma or +-10%
Post CHD
mean+-1 SND sigma or +-10% Comment
-40C -40C -40C -40C
Parameter Name in Datasheet Units
Low Limit
Upper Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk
voh_min_load_me_5v V 3.9 4.5 4.228732 0.0021 42.913 4.24442 0.0039 22.121 4.24708 0.0022 38.133 4.246643 0.00387 21.8315voh_max_load_me_5v V 2.8 5.5 4.173728 0.0084 52.636 4.29162 0.0069 58.198 4.0734 0.0078 54.074 4.085777 0.00797 53.7931
PASS PASS
voh_min_load_me_3v V 2.28 2.8 2.557023 0.005 16.352 2.55646 0.0018 45.364 2.55615 0.0013 64.84 2.557163 0.00172 46.9877PASS PASS
voh_max_load_me_3v V 1.58 3.3 2.559037 0.0057 43.637 2.58151 0.0041 58.69 2.44452 0.005 57.078 2.455513 0.00494 57.0357PASS PASS
vol_min_load_5V_PTA5 V 0 0.4 0.059823 0.004 5.0404 0.0545 0.0018 10.044 0.04976 0.0013 12.469 0.053036 0.00141 12.562PASS PASS
vol_max_load_me_5vPASS PASS
V 0 1.5 0.285454 0.0074 12.801 0.27984 0.0374 2.4926 0.2665 0.0069 12.863 0.278795 0.00345 26.9327 PASS PASSvol_min_load_3V_PTA5 V 0 0.3 0.021754 0.0008 9.471 0.02135 0.0007 9.5426 0.01944 0.0007 9.5253 0.020955 0.00104 6.70754 PASS PASSvol_max_load_me_3v V 0 1 0.197642 0.0028 23.921 0.21253 0.0028 25.722 0.19363 0.0061 10.537 0.194813 0.00637 10.1879 PASS PASS
run_idd_5vrun_idd_3v
mA 0 7 4.661618 0.0473 12.948 4.78875 0.0603 9.4543 4.634 0.0607 10.245 4.72111 0.05416 10.9489 PASS PASSmA 0 3.8 2.279916 0.1188 3.1976 2.25633 0.0998 3.8879 2.13187 0.0496 8.6649 2.21661 0.09258 4.33295 PASS PASS
wait_idd_5vwait_idd_3v
mA 0 2.5 1.604333 0.0222 5.9452 1.62387 0.0243 5.1666 1.54727 0.0245 6.1585 1.604103 0.02252 5.85903 PASS PASSmA 0
N/A1.75 0.981234 0.0247 3.6235 1.01157 0.0234 3.3934 0.96783 0.0191 4.9293 0.99533 0.02145 3.95796 PASS PASS
stop_idd_5vstop_idd_3v
uA 5 0.40108 0.1107 9.3298 0.40637 0.1121 9.195 0.2206 0.0949 11.52 0.426177 0.1121 9.13983 PASS PASS
RoomPre
CHD mean+-1 SND sigma or +-10%
Post CHD
mean+-1 SND sigma or +-10%
CHD Devices Pre HTOL CHD Devices Post HTOL SND Devices Pre HTOL SND Devices Post HTOL
Parameter Name in Low Upper
25C 25C 25C 25C
Datasheet Units Limit Limit Avg Std Cpk Avg Std Cpk Avg Std Cpk Avg Std Cpk Commentvoh_min_load_me_5v V 3.9 4.5 4.243411 0.0013 67.399 4.24201 0.0014 60.519 4.24149 0.0029 29.374 4.241067 0.00147 58.668 PASS PASSvoh_max_load_me_5v V 2.8 5.5 4.037608 0.0079 52.499 4.06418 0.0059 71.837 4.04566 0.0142 29.2 4.06548 0.01427 29.5604 PASS PASSvoh_min_load_me_3v V 2.28 2.8 2.557189 0.0017 48.494 2.55541 0.0011 76.936 2.55354 0.0016 49.8 2.55456 0.00165 49.5683 PASS PASSvoh_max_load_me_3v V 1.58 3.3 2.423617 0.0036 77.983 2.4421 0.0038 75.254 2.42687 0.0091 31.146 2.44295 0.02144 13.3248 PASS PASS
vol_min_load_5V_PTA5 V 0 0.4 0.056092 0.0045 4.1754 0.05553 0.0074 2.5176 0.05398 0.0023 7.8209 0.054007 0.00287 6.27416 PASS PASSvol_max_load_me_5v V 0 1.5 0.314327 0.0159 6.6008 0.30231 0.0187 5.385 0.29104 0.0132 7.3463 0.303827 0.01432 7.07036 PASS PASS
vol_min_load_3V_PTA5 V 0 0.3 0.023302 0.0023 3.3582 0.02268 0.002 3.6983 0.02141 0.001 6.9226 0.022683 0.00144 5.23364 PASS PASSvol_max_load_me_3v V 0 1 0.218472 0.0133 5.4808 0.21847 0.0147 4.9431 0.21437 0.011 6.4955 0.203981 0.01327 5.12387 PASS PASS
run_idd_5v mA 0 7 4.707722 0.0557 10.719 4.82517 0.0486 11.476 4.72046 0.0494 11.999 4.786013 0.05043 11.3295 PASS PASSrun_idd_3v mA 0 3.8 2.307017 0.074 5.0155 2.29503 0.0792 4.733 2.19704 0.0588 6.9285 2.282247 0.07961 4.76357 PASS PASSwait_idd_5v mA 0 2.5 1.609556 0.0244 5.3335 1.64419 0.0205 5.7871 1.58247 0.0188 7.413 1.637867 0.02039 5.91984 PASS PASSwait_idd_3v mA 0 1.75 1.020236 0.0197 3.8879 1.03163 0.0199 3.6656 1.00225 0.0152 5.432 1.029347 0.01921 3.82809 PASS PASSstop_idd_5v uA N/A 5 0.447181 0.1068 9.5323 0.44519 0.0995 10.236 0.26192 0.0861 12.539 0.423487 0.08154 12.5769 PASS PASS
FORMPPAP007DOC Freescale Rev K
Gage Study Summary Report
Customer Part Number: Various Q1’2011 Company/Manufacturing Site ID: Freescale/ CHD-Fab Designate only one of the following and enter the appropriate information:
Wafer Fab Process Technology: 908AT60A 85%UDRSST Assembly Process Package Family: Physical Dimensions Package Drawing #: Test
Special/Important
Characteristic Measurement
Gage/Tool/Equipment %R&R
1/ Date Study Performed
Active Area Nitride ACI CD KLA 8100 XP CD SEM 8.91% 13-Nov-10 Floating Gate ACI CD KLA 8100 XP CD SEM 7.10% 13-Nov-10 Gate Poly ACI CD KLA 8100 XP CD SEM 7.57% 13-Nov-10 Gate Poly ACI Overlay KLA 5200 Overlay 7.77% 07-Jul-10 Via 1 ACI CD KLA 8100 XP CD SEM 5.10% 10-Apr-10 Thickness (HTO) ELP & S200 8.54% 22-Oct-10 Thickness (LV Gate Ox, Gate Ox) ELP & S200 7.41% 05-Feb-10 Thickness (Field Ox) ELP & S200 2.83% 05-Feb-10 Thickness (Poly Dep) ELP & S200 7.40% 05-Feb-10 Thickness (Spacer Etch REMOX) Tencor UV1XXX 4.28% 25-Aug-10 POCL Doping Tencor RS75 1.4% 27-Mar-10
1/ If R&R > 10%, attach containment action, corrective action, or justification (as appropriate)