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Product / ProcessChange Notification
N° 2012-134-B !! UPDATE !!
Updated Information in BLUE TYPE
Original PCN N° 2012-134-A dated 15. November 2012
2013-01-30 Page 1 of 5
Dear Customer,
Attached please find an updated PCN 2012-134-A for your attention.
Updates covered by B version(PCN N°2012-134-B):
1. Products affected:
Product BSP123 L6327 removed. see page 2 and 1_cip12134_b.
2. Description of change :
additional information for Die attach for BSP613P (page 3)
3. Time Schedule::
Start of delivery: date postpone (page 4)
4. Products Discontinuation list:
Product BSP123 L6327 removed see 1_cip12134_b.
Transfer of Assembly to Infineon Technologies (Wuxi), China,implementation of Halogen-free1) mold compound and Copper wire bondingfor products assembled in lead-free package PG-SOT223
This PCN includes a Product Discontinuation Notice refer to attachment 1_cip12134_b
If you have any questions, please do not hesitate to contact your local Sales office.
Disclaimer:If we do not receive any response we consider this as the acceptance of the PCN. After the lastorder date as stated herein, purchase orders related to the unchanged product(s) cannot be accepted.In case the customer rejects this PCN this PCN shall be considered a product discontinuation notice (PD).
Product / ProcessChange Notification
N° 2012-134-B !! UPDATE !!
Updated Information in BLUE TYPE
Original PCN N° 2012-134-A dated 15. November 2012
2013-01-30 Page 2 of 5
SUBJECT OF CHANGE: 1. Transfer of assembly location
2. Implementation of halogen-free1)
mold compound
3. Implementation of Copper wire bonding
PRODUCTS AFFECTED: Products assembled in lead free package PG-SOT223, as listed per
sales code in attachment 1_cip12134_b.
Product BSP123 L6327 removed from affected product list.
REASON OF CHANGE: Infineon expands the production capacity for standard Small Signal
Surface Mount Devices at Infineon Technologies (Wuxi) Co., Ltd.,
China, as previously announced in Information Note 069/09.
This is in line with the Infineon production strategy:
Infineon Wuxi to be a volume manufacturing centre for the Discretes &
Chip Card products.
Halogen-free1)
mold compound material copes with the increasing
requirements from customers for environment-friendly products
according to the WEEE directive.
1)Note:
Halogen-free according to International Electrotechnical Commission
(IEC) Standard IEC 61249-2-21:
- 900 ppm maximum Chlorine
- 900 ppm maximum Bromine
- 1500 ppm maximum total Halogens
Product / ProcessChange Notification
N° 2012-134-B !! UPDATE !!
Updated Information in BLUE TYPE
Original PCN N° 2012-134-A dated 15. November 2012
2013-01-30 Page 3 of 5
DESCRIPTION OF CHANGE: OLD NEW
Assembly Location
Note:
Reflected in Country of Assembly printed onBarcode product label. Illustration see page 4
Infineon Technologies (Malaysia)Sdn. Bhd., Malacca
Infineon Technologies (Wuxi) Co.,Ltd., China
Plating site Infineon Technologies (Malaysia)Sdn. Bhd., Malacca
Subcontractor Technic (suzhou)Semiconductor Eng'g.Co.,Ltd,China
Die attach for BSP613P only
(all other devices remain unchanged)
Die attach: Gluedry packing (MSL3)
Die attach: Eutecticnon dry packing (MSL1)
Mold compound Halogen containing moldcompound
Halogen-free1)
mold compound
Product barcode label
Note:Illustration see page 4
Pb free logo Pb free and halogen-free logo
Wire bonding material Au wire Cu wire
Marking on device Device Marking Device Marking
Product / ProcessChange Notification
N° 2012-134-B !! UPDATE !!
Updated Information in BLUE TYPE
Original PCN N° 2012-134-A dated 15. November 2012
2013-01-30 Page 4 of 5
PRODUCT IDENTIFICATION: External traceability
Barcode Product Label (BPL)
A) Country of assembly: Change from Malaysia to China
B) Halogen-free logo printed on barcode label
C) “L” in sales code will be substituted by “H” to indicate the
halogen free1)
mould compound (see 1_cip12134_b)
D) New customer ordering code (SP number, see 1_cip12134_b)
E) Vgsth grouping
Internal traceability
Ensured via lot number and marking.
TIME SCHEDULE: 2012-134-A 2012-134-B
Final qualification report: See attachment 2_cip12134_a
First samples available: From November 2012 onwards
Start of delivery: From January 2013 onwards
Earlier customer deliveries onspecial customer agreementpossible.
From March 2013 onwards withhighrunner products
Last order date of unchanged product: 15-05-2013
Last delivery date of unchangedproduct:
15-11-2013
Product / ProcessChange Notification
N° 2012-134-B !! UPDATE !!
Updated Information in BLUE TYPE
Original PCN N° 2012-134-A dated 15. November 2012
2013-01-30 Page 5 of 5
ASSESSMENT: Product data sheet values and package dimensions remain
unchanged
Product reliability verified by full product qualification
Advantages of Cu wire compared to Au wire:
- Higher electrical conductivity and thermal conductance.
- Extended stability of bond-pad connections over time.
- Higher current-carrying capacity.
- Less intermetallic phase growth over temperature.
- Copper wire bonding enables an upgrade of the maximum
storage and operating temperature from 150°C to 175°C for
new applications
Infineon Technologies (Wuxi) has already high volume production
experience for Discretes packages. It is one of the TS16949
(Automotive) certified assembly line locations, with production and
delivery of Semiconductor Devices since 2001.
DOCUMENTATION:
1_cip12134_b Affected product list including
Product discontinuation & new ordering codes
2_cip12134_a Final Qualification Report
3_cip12134_a Customer information package:
Additional information on Cu wiring
4_cip12134_a Customer information package:
General transfer overview
15.05.201315.11.2013
Sales Name Package SP numberOPN
(Orderable Part Numbers )
Sales Name
(L substitued by H)Package SP number Remark
BSP123 L6327 PG-SOT223 SP000089202 BSP123L6327HTSA1 BSP123 H6327 PG-SOT223 SP001058570 refer to PD_005_13
BSP125 L6327 PG-SOT223 SP000089204 BSP125L6327HTSA1 BSP125 H6327 PG-SOT223 SP001058576
BSP125 L6433 PG-SOT223 SP000089211 BSP125L6433HTMA1 BSP125 H6433 PG-SOT223 SP001058578
BSP129 L6327 PG-SOT223 SP000089218 BSP129L6327HTSA1 BSP129 H6327 PG-SOT223 SP001058580
BSP129 L6906 PG-SOT223 SP000089219 BSP129L6906HTSA1 BSP129 H6906 PG-SOT223 SP001058586
BSP135 L6327 PG-SOT223 SP000089206 BSP135L6327HTSA1 BSP135 H6327 PG-SOT223 SP001058812
BSP135 L6433 PG-SOT223 SP000432430 BSP135L6433HTMA1 BSP135 H6433 PG-SOT223 SP001058592
BSP135 L6906 PG-SOT223 SP000089207 BSP135L6906HTSA1 BSP135 H6906 PG-SOT223 SP001058594
BSP149 L6327 PG-SOT223 SP000089214 BSP149L6327HTSA1 BSP149 H6327 PG-SOT223 SP001058818
BSP149 L6906 PG-SOT223 SP000089215 BSP149L6906HTSA1 BSP149 H6906 PG-SOT223 SP001058604
BSP170P L6327 PG-SOT223 SP000089225 BSP170PL6327HTSA1 BSP170P H6327 PG-SOT223 SP001058608
BSP171P L6327 PG-SOT223 SP000089226 BSP171PL6327HTSA1 BSP171P H6327 PG-SOT223 SP001058824
BSP171P L6919 PG-SOT223 SP000427766 BSP171PL6919HTSA1 BSP171P H6919 PG-SOT223 SP001058616
DISCONTINUED NEW (REPLACEMENT)
PRODUCT DISCONTINUATIONreferring to PCN N° 2012-134-B
Transfer of Assembly to Infineon Technologies (Wuxi), China, implementation of Halogen-free mold compound
and Copper wire bonding for products assembled in lead-free package PG-SOT223.
Last order date:
Last delivery date:
BSP171P L6919 PG-SOT223 SP000427766 BSP171PL6919HTSA1 BSP171P H6919 PG-SOT223 SP001058616
BSP295 L6327 PG-SOT223 SP000089210 BSP295L6327HTSA1 BSP295 H6327 PG-SOT223 SP001058618
BSP297 L6327 PG-SOT223 SP000089213 BSP297L6327HTSA1 BSP297 H6327 PG-SOT223 SP001058622
BSP298 L6327 PG-SOT223 SP000088258 BSP298L6327HUSA1 BSP298 H6327 PG-SOT223 SP001058626
BSP299 L6327 PG-SOT223 SP000089200 BSP299L6327HUSA1 BSP299 H6327 PG-SOT223 SP001058628
BSP300 L6327 PG-SOT223 SP000089201 BSP300L6327HUSA1 BSP300 H6327 PG-SOT223 SP001058720
BSP315P L6327 PG-SOT223 SP000089221 BSP315PL6327HTSA1 BSP315P H6327 PG-SOT223 SP001058830
BSP316P L6327 PG-SOT223 SP000089222 BSP316PL6327HTSA1 BSP316P H6327 PG-SOT223 SP001058754
BSP317P L6327 PG-SOT223 SP000089220 BSP317PL6327HTSA1 BSP317P H6327 PG-SOT223 SP001058758
BSP318S L6327 PG-SOT223 SP000235371 BSP318SL6327HTSA1 BSP318S H6327 PG-SOT223 SP001058838
BSP318S L6534 PG-SOT223 SP000235373 BSP318SL6534HTMA1 BSP318S H6534 PG-SOT223 SP001058764
BSP320S L6327 PG-SOT223 SP000235375 BSP320SL6327HTSA1 BSP320S H6327 PG-SOT223 SP001058768
BSP321P L6327 PG-SOT223 SP000212228 BSP321PL6327HTSA1 BSP321P H6327 PG-SOT223 SP001058782
BSP322P L6327 PG-SOT223 SP000212229 BSP322PL6327HTSA1 BSP322P H6327 PG-SOT223 SP001058784
BSP324 L6327 PG-SOT223 SP000089203 BSP324L6327HTSA1 BSP324 H6327 PG-SOT223 SP001058786
BSP613P L6327 PG-SOT223 SP000089224 BSP613PL6327HUSA1 BSP613P H6327 PG-SOT223 SP001058788
BSP88 L6327 PG-SOT223 SP000089217 BSP88L6327HTSA1 BSP88 H6327 PG-SOT223 SP001058790
BSP89 L6327 PG-SOT223 SP000089216 BSP89L6327HTSA1 BSP89 H6327 PG-SOT223 SP001058794
BSP92P L6327 PG-SOT223 SP000089223 BSP92PL6327HTSA1 BSP92P H6327 PG-SOT223 SP001058796
BSP320S L6433 PG-SOT223 SP000235376 BSP320SL6433HTMA1 BSP320S H6433 PG-SOT223 SP001058772
PD12134 Page 1 of 1 2012-11-15
Product / Process Change Notification
CUSTOMER APPROVAL FORM N° 2012-134-A
Transfer of Assembly to Infineon Technologies (Wuxi), China, implementation of Halogen-free1) mold compound and Copper wire bonding for products assembled in lead-free package PG-SOT223
Please list product(s) affected in your application(s):
Please check the appropriate box below: We agree with this proposed change and its schedule.
We have objections:
We need more information:
We need samples:
Sender Company: Name: Address/Location :
E-Mail:
Telefon: Fax:
Signature Date:
Please return to : your Sales partner Company: Infineon Name:
Address/Location :
E-mail:
Telefon: Fax:
Date: 2012-10-23
Reference Products BSP299 BSP295 BSP318S BSP373N BSP613P BSP613P BSP171P
Wafer Technology/
Location
EH6_500V_NL
Villach
KSN_50V_LL
Villach
SFET_60V_LL
Villach
SFET2_100V_NL
Villach
KSP_-60V_NL
Villach
KSP_-60V_NL
Villach
KSP_-60V_LL
Villach
Chip type L0542 L8053 L1232 L8119 L0904 L0904 L0914
Chip sizes [mm2] 5.47 2.90 2.62 1.54 6.24 6.24 2.89
Package type /
Assembly line location
PG-SOT223-4
Wuxi
PG-SOT223-4
Wuxi
PG-SOT223-4
Wuxi
PG-SOT223-4
Wuxi
PG-SOT223-4
Wuxi
PG-SOT223-4
Wuxi
PG-SOT223-4
Wuxi
Test description Abbr. Condition Readout 1 lot 1 lot 1 lot 1 lot 1st lot 2nd lot 1 lot
Pre-Conditioning
JESD22 A113PC
MSL3 MSL1 MSL1 MSL1 MSL3 MSL1 MSL1
High Temperature
Reverse Bias
JESD22 A-108
HTRB*Tj = 150 °C
VDS = VDS max.
0 hprecon168 h500 h 1000 h
refer to BSP295/BSP373N
VDS = 50V0 / 770 / 770 / 770 / 770 / 77
VDS = 60V0 / 770 / 770 / 770 / 770 / 77
refer to BSP318S VDS = -60V0 / 770 / 770 / 770 / 770 / 77
VDS = -60V0 / 770 / 770 / 770 / 770 / 77
refer to BSP613P
High Temperature
Gate stress
JESD22 A108
HTGS*
Ta = 150 °CVGS = ±100 % VGS max.
for NL, ±80 % VGS max. for LL,
SLL
0 hprecon168 h500 h 1000 h
VGS = ±20 V0 / 770 / 770 / 770 / 770 / 77
VGS = ±16 V0 / 770 / 770 / 770 / 770 / 77
VGS = ±16 V0 / 770 / 770 / 770 / 770 / 77
VGS = ±20 V0 / 770 / 770 / 770 / 770 / 77
VGS = ±20 V0 / 770 / 770 / 770 / 770 / 77
VGS = ±20 V0 / 770 / 770 / 770 / 770 / 77
ref to BSP613P
Temperature CyclingJESD22 A104
TC* Ta min = -55 °C
Ta max = +150 °C
0 cycprecon500 cyc1000 cyc
0 / 850 / 850 / 850 / 85
0 / 850 / 850 / 850 / 85
0 / 850 / 850 / 850 / 85
0 / 850 / 850 / 850 / 85
0 / 850 / 850 / 850 / 85
0 / 850 / 850 / 850 / 85
0 / 850 / 850 / 850 / 85
BSP373N: biggest chip SFET2 wafertechnology
BSP613P: biggest chip from KSP wafertechnology, 1st lot with glue die-attach
BSP613P: biggest chip from KSP wafertechnology, 2nd lot with eutectic die-attach
BSP171P: medium chip from KSP wafertechnology
Assessment of Qualification Test Results: The products assembled in PG-SOT223-4 at Infineon Technologies (Wuxi), China, pass the qualification acc. AEC Q101.
This is based on positive results from all reliability stress tests performed
Moisture Sensitivity Level + 3x solder reflow at 260 °C + 100xTC before HTRB, HTGS, TC, AC, H3TRB, IOL
PCN 2012-134-AQualification of PG-SOT223Transfer of Assembly to Infineon Technologies (Wuxi), China, implementation of Halogen-free mold compound and Copper wire bonding for products assembled in lead-free package PG-SOT223
Final Qualification Report
Reason for choosing the following test vehicles, all assembled in PG-SOT223-4 at Infineon Technologies (Wuxi), China
BSP299: biggest chip from EH6 wafertechnology
BSP295: biggest chip fron KSN wafertechnology
BSP318S: biggest chip fron SFET1 wafertechnology
page 1 / 2 2_cip12134_a_Qualification report_SOT223
Reference Products BSP299 BSP295 BSP318S BSP373N BSP613P BSP613P BSP171P
Autoclave
JESD22 A102AC*
Ta = 121°CRH = 100%
0 hprecon96 h
0 / 770 / 770 / 77
0 / 770 / 770 / 77
refer to BSP295/ BSP613P
refer to BSP295/ BSP613P 0 / 77
0 / 770 / 77
0 / 770 / 770 / 77
refer to BSP295/ BSP613P
High Humidity High
Temp. Reverse Bias
JESD22 A101
H3TRB*
T = 85 °CRH = 85%
VDS = ±80 % from VDS max., but max. up to 80V
0 hprecon168 h500 h 1000 h
VDS = 80 V0 / 770 / 770 / 770 / 770 / 77
VDS = 40 V0 / 770 / 770 / 770 / 770 / 77
VDS = 48 V0 / 770 / 770 / 770 / 770 / 77
refer to BSP295 VDS = - 48 V0 / 770 / 770 / 770 / 770 / 77
VDS = - 48 V0 / 770 / 770 / 770 / 770 / 77
refer to BSP613P
Intermitted Operational Life
Test
MIL-STD 750/Meth.1037
IOL*Delta T = 100 K n = 15000 cyc
0 cycprecon
7500 cyc15000 cyc
refer to BSP2950 / 770 / 770 / 770 / 77
refer to BSP295 refer to BSP2950 / 770 / 770 / 770 / 77
0 / 770 / 770 / 770 / 77
refer to BSP613P
Resistance to Solder heat
JESD22 B106RSH 3x dip at 260 °C
0 hafter stress
0 / 300 / 30
refer to BSP613P refer to BSP613P refer to BSP613P0 / 300 / 30
refer to BSP613P refer to BSP613P
ESD Characterization
ESD STM5.1-1998
JEDEC: EIA/JESD22-A114-B
ESDHBMMM
not performedno change in ESD-
class
not performedno change in ESD-
class
not performedno change in ESD-
class
not performedno change in ESD-
class
not performedno change in ESD-
class
not performedno change in ESD-
class
not performedno change in ESD-
class
Electrical Distribution
AEC Q100-009ED
-55 °C+25 °C+150 °C
0 / 30 0 / 30 0 / 30 0/30 0 / 30 0 / 30 0/30
Destructive Physical Analysis DPArandom sample devices
after Initial, AC & TCpositive on 5 samples positive on 5 samples
refer to BSP295/BSP613P
refer to BSP295/BSP613P
positive on 5 samples positive on 5 samplesrefer to
BSP295/BSP613P
Wire Bond Strength
MIL-STD-750 Method 2037WBS
random sample devices after Initial & TC
positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples
Bond ShearAEC-Q101-003
BSrandom sample devices
after Initial & TCpositive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples
page 2 / 2 2_cip12134_a_Qualification report_SOT223
Customer Information Package - Copper Wire Bonding
Advantages of Copper wire compared to Gold wire:
Higher electrical conductivity and thermal conductance.
Extended stability of bond-pad connections over time.
Page 2Copyright © Infineon Technologies 2012. All rights reserved.
Higher current-carrying capacity.
Less intermetallic phase growth over temperature.
Customer Information Package - Copper Wire Bonding
Higher electrical conductivity and thermal conductance
Page 3Copyright © Infineon Technologies 2012. All rights reserved.
Customer Information Package - Copper Wire Bonding
Extended stability of bond-pad connections over time
intermetallic compoundlimits Au on Alconnection lifetime
Page 4Copyright © Infineon Technologies 2012. All rights reserved.
stable electricalresistance of bond padconnection enhancesconstant long termperformance of devices
Customer Information Package - Copper Wire Bonding
Higher current-carrying capacity
Page 5Copyright © Infineon Technologies 2012. All rights reserved.
Customer Information Package - Copper Wire Bonding
Copper ball, 22um bond wireGold ball, 22um bond wire
Less intermetallic phase growth
Page 6Copyright © Infineon Technologies 2012. All rights reserved.
The intermetallic phase growth between Copper wire and Aluminium metallization issignificantly slower than with Gold wire. This ensures an extended long term stabilityof bond connections.
Copper wire bonding enables an upgrade of the maximum storage and operatingtemperature from 150°C to 175°C for new applications.
Above cross-section examples were bonded with Au / Cu on a chip with 3.2um Al metal in SOT23 package andsubjected to precon MSL1 + solder reflow at 260deg.C + 100x TC + 1000 hours HTGS test.
Au-Al intermetallic phase
Customer Information Package4_cip12134_a
General information for PCN 2012-134-ATransfer of Assembly and Final Testing to Infineon Technologies Wuxi(China), the high volume production center for leaded Discretes packages(China), the high volume production center for leaded Discretes packages
Introduction
Infineon’s discretes package operations are centered at Wuxi (China) toensure competiveness also in the future
Supported by the Wuxi government, Infineon is investing into a Wuxicompetence center for leaded packages
Expansion of Wuxi leaded package production by capacity transferfrom Malacca
Malacca transformation to higher end products(Leadless, Wafer Level, System-in-Package, Sensors)
Page 2Copyright © Infineon Technologies 2012. All rights reserved.
(Leadless, Wafer Level, System-in-Package, Sensors)
Customer impact shall be minimized
Deliveries and supply chain will be fully maintained
Transfer methodology ensures highest quality from both sites, Wuxiand Malacca
Remark: This planned change was first officially communicated throughInformation Note 069/09 in October 2009.
Infineon Package Technology PortfolioDiscretes Packages being in / transferred to Wuxi
SMD leaded SOT SOD TSFP SC TSSOP10
Leadless
DiscretesPower Sensors
Through Hole
TO, DIPSMD TO DSO SSOP
Leadless
Through Hole
PSSOSMD LeadedDSOSCTSOP
High Power
PowerModules Easy 62mm Econo EconoPACK+ PrimePACK
Mold on LF P-MCCx MoldP-Mx.xChip on Flex UV GlobetopT-Mx.x
Chip CardLeadframe
basedPackages
Wafer LevelPackages,Bare Die
SurfaceMountTechnology(SMD)
Through Hole
DIP 2)SMD PLCC 2) TSSOP TQFP,LQFP, MQFPLeadless
PowerIC
Laminatebased
Packages
SMD OCCN 1) BGA LBGA xFBGA,xFSGA
Page 3Copyright © Infineon Technologies 2012. All rights reserved.
Leadless TSLP
Wafer level WLP
Leadless CanPAK SON QFN
SIP LowPower IDCSIP Medi.Power CIPOS
OpencavityDSOF
PrimePACK IHM IHV HybridPACK
T-Mx.xPRELAMPPxx
Flip Chip S-MFCx.x
Wafer Bumped Diced
Without re-distribution WLP (fan-in)
Wafer levelw/redistribution
WLB (fan-in)
eWLB(fan-out)
Bare Die Wirebond Flip chip
Leadless VQFN O-LQFN 1)
1) for specialities only 2) phase-out
Flip chipFCxBGAxF2BGA,xF2SGA
Sapphire Introduction and MotivationExpanding Wuxi – Transforming Malacca
up to 2009 2010 and beyond
Production at Malacca
SOT23, SOT223, SC74. SOT143,TSSFP, TSSOP, SOT89, SC79,SCD80, TSFP3, TSFP4, SOT3x3, TSLP, WLP
Production at Malacca
High volume site at Malacca forLeadless TSLP and WLP
Malacca Malacca
Page 4Copyright © Infineon Technologies 2012. All rights reserved.
SCD80, TSFP3, TSFP4, SOT3x3, TSLP, WLP
Production at Wuxi, China
SOT23, SOD323
Leadless TSLP and WLP
Production at Wuxi, China
High volume site at Wuxi for SMT packages
SOT223, SOT23, SC74. SOT143,TSSFP, TSSOP, SOT89, SC79,SCD80, TSFP3, TSFP4, SOT3x3,SOD323
Wuxi Wuxi
Existing Wuxi production experience and futureportfolio
SC 79
SOT 89
SOT 23
SOD323
SOT 323 SOT 343 SOT 363
SC 74
SCD 80
TSSFP
SOT23 / SOD323
Pre-assembly + Assembly / Test
12 Billion units manufactured since2005
SOT23 / SOD323
Pre-assembly + Assembly / Test
12 Billion units manufactured since2005
> 12B pcs production experience at Wuxi on SOT23 / SOT323> 12B pcs production experience at Wuxi on SOT23 / SOT323
Package
Capability
Production Experience
Package
Capability
Production Experience
Expanded PortfolioExpanded Portfolio
Page 5Copyright © Infineon Technologies 2012. All rights reserved.
Gull Wing / Flat Lead packages
SOT 23 SOD323SOT 3X3 SOT 223
SOT 89 SOT143SC 79 / SCD 80 SC74TSSFP TSFPTSSOP10
Gull Wing / Flat Lead packages
SOT 23 SOD323SOT 3X3 SOT 223
SOT 89 SOT143SC 79 / SCD 80 SC74TSSFP TSFPTSSOP10
SOT 89
SOT 223
SC 74
TSSOP 10
TSFP 3 TSFP 4
TSSFP
SOT 143
January 2001
AF Transistors RF TransistorsAF Diodes RF Diodes
Current production covers numerouscustomers in all applications such as a
Automotive
IndustrialMobileConsumer
January 2001
AF Transistors RF TransistorsAF Diodes RF Diodes
Current production covers numerouscustomers in all applications such as a
Automotive
IndustrialMobileConsumer
Start production
Applications
Existing CustomerPortfolio
Start production
Applications
Existing CustomerPortfolio
Infineon’s Operation SitesWuxi/China is a strategic part of Infineon’s Operations
Page 6Copyright © Infineon Technologies 2012. All rights reserved.
Productionin
Competence
IMMRPD
SOT23
SOT89, SOT143 SC79 / SCD80
Preliminary PCN Schedule Outlookas of Nov 2012
SOT3x3 Jan 2010 TSFP3/4 Dec 2010 SC74 LED drivers Jan 2011 SOT223 Jun 2011 SC74 May 2011
Dec 2009 2010 - 2012
SOT23 Jun 2011
Copyright © Infineon Technologies 2012. All rights reserved.
CompetenceCenterIMM
PSD
ATV
TSSOP10 Apr 2013
Wuxi
SOT23 Jun 2011 SOT3x3 Jun 2011 SOT223 Nov 2012 SOT89 Nov 2012
Page 7
Transfer Methodology and Technology Options
Minimized potential risk by transfer of methodology from Malacca to Wuxi
Quality, Reliability, electrical performance and package dimensions of theWuxi products will be the same as for Malacca products.
Only qualified technologies, processes and equipments are transferred.
Automotive Standard AEC-Q100 / Q101 is used as qualification guidelineon defined reference products for each package assembly line.
Copyright © Infineon Technologies 2012. All rights reserved.
Wire bonding & mold compound materials may change for selected
products to:
Halogen free mold compound, where essential for environmental reasons
Copper wiring with extended stability of bond-pad connections over time
For details please refer to the individual PCN documents
Page 8