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MV WBG Power Electronics for Advanced Distribution Grids Peter K. Steimer, ABB Switzerland Ltd., Corporate Research Fellow, NIST/DOE Workshop, April 15, 2016

Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

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Page 1: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

MV WBG Power Electronics for AdvancedDistribution Grids

Peter K. Steimer, ABB Switzerland Ltd., Corporate Research Fellow, NIST/DOE Workshop, April 15, 2016

Page 2: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

1. HV Power Semiconductors2. MV Power Conversion3. Opportunities for SiC4. Conclusions

Page 3: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

Mature Sitechnology

Power SemiconductorsSiC technology

Silicon devices up to 6.5 kV

Enhanced Trench SPT+ IGBT

50% more power per Si area with Bi-mode devices (BIGT, BGCT)

Wide band gap SiC devices

1. Unipolar 1.2 kV -3.3 kV devices

2. Unipolar 10 kV devicesUp to 10 - 20 kHz

3. Bipolar 20 kV (and higher) devices

Packaging

Higher temperature and

Higher voltage packaging

[kV]

20

10

5Si

SiC

1 5 20 [kHz]

1 1.2 – 3.3 kVunipolar SIC

10 kV unipolar10 - 20 kHz

20 kV bipolar

© ABB Group April 20, 2016 | Slide 3

Page 4: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

Power semiconductprsNew High Power Module Standard

C1

G1

E1

C1

C2 / E1

G2

E2

E2

14

5

6

2

7

8

39

NTC

Dual Module Concept, 10 nH stray inductance

Ratings (100mm x 140 mm)

typical 1.7 kV ratings up to 2 x 1000A

typical 3.3 kV ratings up to 2 x 500A

typical 6.5 kV ratings up to 2 x 250A

Designed to accommodate Si and SiC Chips

No derating for parallel connection

Reference: LinPak, a new low-inductive phaseleg IGBT module with easy paralleling for high powerR. Schnell, S. Hartmann, D. Trüssel, F. Fischer, A. Baschnagel. M. Rahimo, PCIM 2015

© ABB Group April 20, 2016 | Slide 5

Page 5: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

1. HV Power Semiconductors2. MV Power Conversion3. Opportunities for SiC4. Conclusions

Page 6: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

LV Power ConversionSiC Module in a LV Converter

April 20, 2016 | Slide 7© ABB

Si - IGBT Com. mod. 1 Com. mod. 2ABB

Lσ ~ 16nH Max gate coupling < 200 pH Long-term reliable operation confirming

expected performance of the module prototype

Page 7: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

© ABB Group April 20, 2016 | Slide 8

MV Power ConversionMMC Demonstrator

Four MMC Demonstrator units

each rated 6 kVDC

1.25MW

connected to 12.47kV, 60Hz grid

dc link configurable

6kV, 840A

12kV, 420A

24kV, 210A

PU1

PU2

PU3

PU4

6kV, 210A

6kV, 210A

6kV, 210A

6kV, 210A

DC output

network

6kV, 840A…

24kV, 210A

12.47kV, 60Hz

3.3kV-3.9kV

2.75MVA

2.75MVA

3.3kV-3.9kV

Reference: M. Steuer, et al., “Multifunctional Megawatt Scale Medium Voltage DC Test Bed based on Modular Multilevel Converter (MMC) Technologys”, ESARS 2015

Page 8: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

MMC DemonstratorMMC Converter

MMC PEBB

Power module with two series bipolar cells, based on 1700V, 2 x 300A IGBTs

Configurable PEBB (4 unipolar cells)

Full-bridge MMC converter (18 PEBBs)

1.25 MW @ 6 kVdc© ABB Group April 20, 2016 | Slide 9

Page 9: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

MVDC Distribution Solid-State Protection Option

3. Hybrid DC breaker

Very low losses, 0.2 pu PE

Needs fast mechanical disconnector

Conclusion for MVDC

The solid-state breaker is expected to bepreferred solution due to

- Lowest PE effort

- Losses of 0.1%

- Si as benchmark© ABB20 January, 2016| Slide 10

1. Integrated Solid State DC breaker

MMC with full bridge cells orequivalent circuits

Considerable losses, 1 pu PE

2. Solid state DC breaker

As introduced for MV Drives (ABB’sACS1000) in 1998

Considerable losses, 0.2 pu PE

Page 10: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

MMC DemonstratorDC link short-circuit test

Logic implemented to step DC voltage from 0 to 5.5kV and back to 0V after 200ms

© ABB Group April 20, 2016 | Slide 11

0.085 0.09 0.095 0.1 0.105 0.11 0.115 0.12 0.125-0.2

0

0.2

0.4

0.6

0.8

1

1.2

DC

cur

rent

(kA

)

Time (s)

MYIdc (PHIL)

0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0.8

1

DC c

urre

nt (k

A)

Time (s)

MYIdc (PHIL) 900A

210A

900A

210A

Page 11: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

LVDC DistributionABB LV DC pilot project for Green Datacenter

Efficiency: 10 percent improvement (not counting the reduced need for cooling in the IT room). Costs: 15 percent lower costs related to the electrical components for the data center power supply. Footprint: 25 percent less space required for the electrical components for the data center power supply.

Higher voltage and DC brings efficiency benefits. Future is MVDC!© ABB24 March, 2016| Slide 12

Page 12: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

LVDC DistributionABB’s On-board DC Grid System

Efficiency: Up to 20% fuel saving if taking full advantage of all features including energy storage and variable speed engines.

Footprint: Increased space for payload through lower footprint of electrical plant and more flexible placement of electrical components.

Service: Reduced maintenance of engines by more efficient operation

© ABB24 March, 2016| Slide 13

Higher voltage and DC brings efficiency benefits. Future is MVDC!

Page 13: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

MV DC/DC Power Conversion1.2 MVA PET Protoype for Field Trial

April 20, 2016 | Slide 14© ABB

PETT traction pilot pilot installation Q1 2012

MV dc link (3.3kV DC)

LV dc link (1.5kV DC)

1.2MVA

Resonant operation, fs = 1.8kHz

dc-dc converter

10,000 Km of operation

Page 14: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

MV DC/DC Power ConversionSemiconductor Technology – Main Challengers

April 20, 2016 | Slide 15© ABB

PE Topologies/Architectures

High Frequency Transformer

LrLm

TR

S3

S4

C3

C4

Cr

C1

C2

S1

S2

3.3 kV 800 A IGBT6.5 kV 400 A IGBT

3.6kV 1.5kV

Main Challenges High voltage bipolar devices optimal for low

frequency operation - < 1KHz Despite off soft-switching, turn-off losses still high

– limiting switching frequency – 2kHz Better trade-off between turn-off and switching

losses by anode engineering – but still not optimal Fs – 5kHz

SiC as enabler for higher frequencies

HV Si IGBT Devices – Resonant Operation

20 kVdc /1 kVdc isolated DC/DC enabled by SiC needed for MVDC

Page 15: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

1. HV Power Semiconductors2. MV Power Conversion3. Opportunities for SiC4. Conclusions

Page 16: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

MV Power ConversionHigher Voltage Grid connection

© ABB Group April 20, 2016 | Slide 18

Grid connection options for 4.16 up to 13.8 kVAC:

1. Cell-based converters with 1.7 kV SiC MOSFETs – mainly higher dynamics

4.16 kV 9L 8 x 1 kVdc 1.7 kV Si IGBT → 1.7 kV SiC MOSFET

13.8 kV 25L 24 x 1 kVdc 1.7 kV Si IGBT → 1.7 kV SiC MOSFET

2. Switch-based converters with HV SiC MOSFETs / IGBTs – back to simple topology

4.16 kV 3L 2 x 3.6 kVdc 6.5 kV SiC MOSFET

13.8 kV 3L 2 x 12 kVdc 10 kV SiC MOSFETs, ns=220 kV SiC IGBT (as future option)

The game changer is the most simple 13.8 kV grid converter (3L and filtering)

- Higher voltage leads to higher efficiency

- To introduce focus on low currents (i.e. LinPak SiC Module: 20 kV, 2x 85A)

Page 17: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

1. HV Power Semiconductors2. MV Power Conversion3. Opportunities for SiC4. Conclusions

Page 18: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research

MV WBG Power Eletronics for Distribution GridsOutlook

April 20, 2016 | Slide 21© ABB

HV WBG Power Semiconductors

• HV unipolar (i.e. 6.5 kV) as 1st step to enable HV and HF power semiconductors

• HV bipolar (i.e. 20 kV) as 2nd step for higher voltages

MV Power Conversion

• HV and HF WBG power semiconductors enable transformerless switch-based 3L MV converters with much higher voltages, i.e. up to 13.8 kVac

• HV and HF WBG power semiconductors enables galvanically isolated MVDC toLVDC power conversion to replace bulky grid transformers (60 Hz)

MV Distribution

• MVDC distribution enables highest efficient Integrated Power Systems (Marine, Renewables, Data centers) and will benefit from the above progress in MV power conversion (higher voltage, PE Xfrms)

• Solid-state breaker as prefered protection element for MVDC

Page 19: Peter K. Steimer, ABB Switzerland Ltd., Corporate Research