Juergen Bernauer, Managing Director ABB … 1913 : ABB started in Switzerland with Power Converters based on Mercury Vapourfor applications like Locomotives, Industrial Melting and

© ABB| Slide 15 February, 2015

SEMI Swiss Semiconductor Forum 2015ABB in High Power Semiconductors

Juergen Bernauer, Managing Director ABB Semiconductors, February 2015


ABB in Power SemiconductorsMore than 100 years in Power Electronics - Milestones

5 February, 2015

1913

1954

§ Year 1913 : ABB started in Switzerland with Power Converters based on Mercury Vapour for applications like Locomotives,Industrial Melting and High-Voltage Direct Current Power Transfer (HVDC) until 1963.

§ Year 1954: ABB launched the first Diode based on Silicon.§ Year 1981: Opening of the Semiconductor Factory (Thyristors) in Lenzburg, Switzerland.§ Year 1998: Opening of the IGBT (Transistors) Line in Lenzburg, Switzerland§ Year 2008-2012: ABB invested > 250 MUSD in Lenzburg and acquired Polovodice in Prague, CZ.

19811938

Mercury VapourSilicon

1964

2010 2012


ABB in Power SemiconductorsMission

§ We drive innovation in power semiconductortechnology together with our customers.

§ We add value through best performance and qualityof our power semiconductors.

§ We commit to maintain the highest standards foroccupational health and safety and businessintegrity.


ABB in Power SemiconductorsOur customer segments

ElectricalMobilityTrains, Metros,Mining Trucks

IndustryDrives, Rectifiers,Soft Starters, UPS,Welding applications

PowerTransmission

HVDC, FACTS

RenewableEnergiesWind Turbines,

Large Solar Parks


ABB in Power SemiconductorsABB is the most integrated player across the Power Electronics value chain


Global Center of Competence for Power Electronics (PE)Research – High Power Semiconductors – PE Applications

Lenzburg

Turgi Baden-Dättwil

Lenzburg

Supported by various cooperation's with universities & institutes


ABB in Power SemiconductorsOur Product Portfolio and the applications

Thyristors (Current controlled) and Diode Devices§ PCT = Phase controlled Thyristor§ BCT = Bidirectional controlled Thyristor§ GTO = Gate Turn-off Thyristor§ IGCT = Integrated Gate Commutated Thyristor§ Standard and fast recovery Diodes§ Welding Diodes§ 200 V up to 10 kV

IGBTs (Field/Voltage controlled) and Diode Devices§ IGBT = Insulated Gate Bipolar Transistor§ IGBTs and Diodes 1.2 kV…6.5 kV

** HiPak (Traction, Industry)

** StakPak (ABB HVDC Light)


ABB in Power SemiconductorsSpecial products for HVDC applications – StakPak IGBT Module

§ 700 A up to 3000 A

§ 2500 V and 4500 V

§ Designed for series connection:Stable short circuit in case of failure

§ Explosion resistant

§ Tolerant against uneven mounting pressure

Cooling plate MoSi

Al

Guaranteed Short circuit failure mode

HVDC: High Voltage Direct Current


ABB in Power SemiconductorsSpecial products for Marine applications – The IGCT workhorse for the Azipod Drive

§ Thyristor “Workhorses”available for up to 20 MW DriveSystems

§ Switch-off capability up to5000A at 4.500 V

© ABB| Slide 10

ABB in Power SemiconductorsOur competences

5 February, 2015

§ R&D and Technology§ Process and Product Engineering§ Chip and Module Production§ Reliability Testing§ Facility Management§ Environment, Health and Safety§ Quality management and quality assurance§ Sales and Customer Services§ Product Management & Application Support§ Supply Chain Management§ Special Test systems§ Factory Automation§ IT (Factory)

§ People development: Line Management and Specialist Careerpath (Senior, Principal, Senior Principal, Corporate Executive)

© ABB| Slide 11

ABB in Power SemiconductorsA view numbers and impressions from Lenzburg

Fixed Assets in Infrastructure to provide annually

§ 36 GWh of electrical energy (36 hours runs a 1 GW Power Plant only forus)

§ 15.5 Million tons of N2

§ 17.5 Million tons of Clean Dry Air§ 800 tons of chemicals

Fixed Assets in production equipment to provide services like Diffusion§ Etching§ Implantation§ Metallization§ Lithography§ Intensive Routine Testing

5 February, 2015

© ABB| Slide 12

ABB in Power SemiconductorsHigh Power Semiconductors are tested under harsh conditions

5 February, 2015

ABB Semiconductors are tested and qualified under harsh conditions

§ HTRB (High Temperature Reverse Bias)

§ HTGB (High Temperature Gate Bias)

§ THB (Temperature/Humidity Bias, 85°C/85%)

§ APC (Active Power Cycling)

§ TC (Temperature Cycling)

© ABB| Slide 13

ABB in High Power SemiconductorsInvestments in R&D

Silicon Technology

§ Low on-state losses

§ High controllability and a soft switching behavior

§ High Safe Operating Area (SOA)

§ High power densityà low total system cost

§ Higher reliability

Silicon carbide

§ New R&D lab in Corporate Research Baden-Dättwil

§ New chip and packaging technologies

Documents

Juergen Bernauer, Managing Director ABB … 1913 : ABB started in Switzerland with Power Converters based on Mercury Vapourfor applications like Locomotives, Industrial Melting and