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We want to transfer a logic 1 using the circuit below. Assume V in = V DD , V g makes a transition from 0V to V DD and at t=0 V x = 0V. Pass transistor starts to conduct when the clock V g makes the transition. - PowerPoint PPT Presentation
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Pass Transistor Logic
• We want to transfer a logic 1 using the circuit below.
• Assume Vin = VDD, Vg makes a transition from 0V to VDD and at t=0 Vx = 0V.
• Pass transistor starts to conduct when the clock Vg makes the transition.
• The pass transistor Tp operates in saturation since Vgs = Vds and Vds>Vgs-Vtn
• Pass transistor operating in saturation region starts to charge up capacitor Cx.
• Using the equation for the pass transistor in saturation we have that the change in voltage at node x with respect to time is given by:
• The threshold voltage is subject to substrate bias effect and thus depends on the voltage level Vx.
• We can simplify the analysis by neglecting the Vsb factor.
Vin Vx
Cx
Vg
2
2 tnxDDx
x VVVdt
dVC n
Pass Transistor Logic
• If we integrate the expression describing Cx we can solve for Vx.
t
C
VV
tC
VV
VVtV
tV
VVVVV
Ct
VVV
C
VVV
dVCdt
x
tnDD
x
tnDD
tnDDx
x
tnDDtnxDD
x
V V
tnxDD
x
tnxDD
xxt x
x
21
2)(
:get to)( solvecan wefor time expression above theFrom
112
|122
0 020
Pass Transistor Logic
• The variation of the node voltage Vx as a function of time shows that if the voltage at node x cannot exceed a maximum of
• The above expression assumes that VSB is at logic 0. What would be the expression assuming a changing VSB since the source/drain voltage changes?
• The pass transistor turns off when Vx=Vmax since at this point the gate-to-source voltage is equal to the transistor’s threshold voltage. We need VGS>Vtn for ON.
• There are several possible states the terminals could be in: VG=0=Vin=Vx, VG=VDD with Vin =Vx=0, VG=VDD=Vin, with Vx=0 etc.
t
tnDDtx VVVV |max
Vin
VG
Vx
Pass Transistor Logic
• The nMOS device therefore passes good 0s and poor 1s since the source cannot be pulled to a value above VDD-Vtn (the threshold drop).
• When the source voltage rises VSB is not equal to zero any more an body effects occur.
• The threshold drop tends to violate noise margins.
• The pMOS device passes good 1s and poor 0s.
• Vx of the pMOS drops to below |Vtp| and the transistor cuts off.
• pMOS devices thus pull down to only |Vtp| above ground (GND).
• Why isn’t, Vmax4 VDD-Vtn1-Vtn2-Vtn3-Vtn4?
• What would happen if we configured the series devices above to have each drain/source drive the next device’s gate?
VDD
VDD
V1 V2 V3
Vmax3=VDD-Vtn4