135
Outphasing RF Power Amplifiers for Mobile Communication Base Station Applications Differenzphasengesteuerte Hochfrequenz-Leistungsverst¨ arker ur die Anwendung in Mobilfunk Basisstationen der Technischen Fakult¨ at der Friedrich-Alexander-Universit¨ at Erlangen-N¨ urnberg zur Erlangung des Doktorgrades Dr.-Ing. vorgelegt von M.Sc. Zeid Abou-Chahine aus Al-Manara, Libanon

Outphasing RF Power Ampli ers for Mobile Communication

  • Upload
    others

  • View
    3

  • Download
    0

Embed Size (px)

Citation preview

Page 1: Outphasing RF Power Ampli ers for Mobile Communication

Outphasing RF Power Amplifiersfor Mobile Communication Base Station Applications

Differenzphasengesteuerte Hochfrequenz-Leistungsverstarkerfur die Anwendung in Mobilfunk Basisstationen

der Technischen Fakultat

der Friedrich-Alexander-Universitat Erlangen-Nurnberg

zur Erlangung des Doktorgrades

Dr.-Ing.

vorgelegt von

M.Sc. Zeid Abou-Chahine

aus Al-Manara, Libanon

Page 2: Outphasing RF Power Ampli ers for Mobile Communication
Page 3: Outphasing RF Power Ampli ers for Mobile Communication

Als Dissertation genehmigt

von der Technischen Fakultatder Friedrich-Alexander-Universitat Erlangen-Nurnberg

Tag der mundlichen Prufung: 18.06.2015

Vorsitzende des Promotionsorgans: Prof. Dr.-Ing. habil. Marion Merklein

Gutachter: Prof. Dr.-Ing. Georg FischerProf. Dr.sc.techn. Renato Negra

Page 4: Outphasing RF Power Ampli ers for Mobile Communication
Page 5: Outphasing RF Power Ampli ers for Mobile Communication

All praise be to Allah, the Lord of the worlds.

Alles Lob gehort Allah, dem Herrn der Welten.

Page 6: Outphasing RF Power Ampli ers for Mobile Communication
Page 7: Outphasing RF Power Ampli ers for Mobile Communication

AbstractThe continuously growing focus on reducing energy consumption worldwide has infiltrated

into the telecommunications domain in its both mobile terminals and base stations. This

has led eventually to the introduction of advanced power amplifier (PA) architectures.

This work investigates the suitability of outphasing PAs for use as a high efficiency solu-

tion in next generation base station applications. Besides the classical Chireix concept,

several newly emerging outphasing variants are analyzed and compared. The effects of the

nonlinear output capacitance are considered in detail. It is shown that harmonic isolation

is vital for the Chireix PA realization using transistor devices. In addition, the power

capability of the Chireix outphasing PA is discussed and a load-pull simulation technique

for the complete PA is proposed. The findings are used to develop a method for designing

practical Chireix PAs.

A proof of concept 60 W Chireix PA prototype using state of the art GaN HEMTs is

presented. Measurements with 5 MHz 1-Carrier and 20 MHz 2-Carrier W-CDMA signals

of 7.5 dB PAR resulted in respectively 45 % and 44 % average drain efficiencies.

Page 8: Outphasing RF Power Ampli ers for Mobile Communication
Page 9: Outphasing RF Power Ampli ers for Mobile Communication

UbersichtFur Telekommunikationsausruster Endgeratehersteller wie Infrastrukturlieferanten liegt der Schwerpunkt weltweit mehr und mehr auf einem geringen Energieverbrauch.

Dieser Schwerpunkt erfordert die Einfuhrung fortgeschrittener Leistungsverstarker-

architekturen.

Diese Arbeit untersucht die Eignung des Outphasing-Konzepts im Hinblick auf hochef-

fiziente Leistungsverstarker fur fortschrittliche Sendestationen der drahtlosen Kommu-

nikation. Neben dem klassischen Chireix-Verfahren werden verschiedene moderne

Outphasing-Varianten untersucht und gegeneinander abgewogen. Es wird gezeigt, dass

es bei Verwendung von Transistoren im Chireix-Verstarker vordringlich auf die Isolation

der beiden Pfade bei den Vielfachen der Grundfrequenz ankommt. Ferner wird die Eig-

nung von Outphasing-Verstarkern fur hohe Ausgangsleistungen untersucht und ein neues

Load-Pull-Simulationsverfahren zur Verstarkerentwicklung vorgeschlagen. Die Ergebnisse

laufen in einem neuen Entwurfsverfahren fur Chireix-Leistungsverstarker zusammen.

Die Eigenschaften des Entwurfsverfahren werden herausgerabeitet und seine Eignung

anhand eines 60 W Chireix-Verstarker basierend auf GaN-HEMT-Bauelementen nach-

gewiesen. Messungen zeigen bei 7, 5 dB Spitzen- zu Mittelwertleistung einen Wirkungs-

grad von 45 % bei einem 5 MHz breiten W-CDMA-Signal, und 44 % bei 2 W-CDMA-

Signalen und 20 MHz Signalbandbreite.

Page 10: Outphasing RF Power Ampli ers for Mobile Communication
Page 11: Outphasing RF Power Ampli ers for Mobile Communication

Acknowledgements

The completion of the research work presented in this doctoral thesis would not have been

affordable without the support of numerous people.

I would like to thank deeply Prof. Dr.-Ing. Georg Fischer for his supervision through-

out this phase. His guidance and support have been a great help to me for completing

this thesis. I am thankful to all his suggestions and valuable comments. My grateful

appreciations are also extended to Prof. Dr.-Ing. Dr.-Ing. habil. Robert Weigel for the

opportunity to join the Institute for Electronics Engineering and pursue a doctoral degree

at the Friedrich-Alexander University in Erlangen.

This work was funded by Nokia Siemens Networks in Ulm, Germany. I would like to

thank NSN for their generous backing. As a member of the Radio Frequency Research

and Predevelopment team, I have been surrounded by inspiring advisers and colleagues

who have provided me with a productive environment to conduct research and explore

new ideas. I would like to thank especially Dr.-Ing. Tilman Felgentreff for the project su-

pervision and guidance. His professional assistance has helped me in keeping my progress

on schedule. I wish to thank the colleagues in the RF team too, namely Karlheinz Borst,

Dr.-Ing. Abhijit Ghose, Helmut Heinz, Norbert Huller, Wilhelm Schreiber and Georg

Wissmeier for all their support, and last but not least Dr.-Ing. Christoph Bromberger

for his support and for the many interesting discussions we made. My thanks are also

extended to Dr. Christian Schieblich and his entire team for sharing their technical in-

sights in several occasions. The work progress would have been much slower without the

support with the remote simulations server. For that, I would like to thank Jorg Zopnek.

Also, many thanks go to Hans Jugl for his skilled care when it came to the circuit boards

construction.

I would like to express my vast appreciations to Frank Dechen. His expert support espe-

cially with the DSP board has been much useful.

Whenever management and resources issues showed up, Dr.-Ing. Hartmut Muller, Sieglinde

Zeug and Doris Kalb were just there for providing their help. I would like to thank them

for that.

Page 12: Outphasing RF Power Ampli ers for Mobile Communication

For his time in reviewing the thesis, I thank Prof. Dr.sc.techn. Renato Negra from RWTH

Aachen.

I thank Kerstin Stoltze from the office of doctoral affairs at the Friedrich-Alexander Uni-

versity for her assistance.

I would like to thank my friends and colleagues, Samer Abdallah, Mohammad Amin

Abou Harb, Ahmad Awada, Anas Chaaban, Ahmad Al-Samaneh, Christian Musolff and

Michael Kamper for their encouragements, cooperation and for the good times we had.

I express my sincere gratitude to my beloved family.

I am forever indebted to my parents for their love, encouragement and endless support

throughout my life.

Finally, I would like to thank my wife. Her love, kindness and patience have been a great

asset for me in completing this thesis.

Page 13: Outphasing RF Power Ampli ers for Mobile Communication

Contents

1 Introduction 1

1.1 Background . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.2 Structure of the Work . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Outphasing Architecture Analysis 5

2.1 Fundamentals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.2 Outphasing with Wilkinson Combiner . . . . . . . . . . . . . . . . . . . . . 7

2.2.1 Load Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

2.2.2 Power and Efficiency Calculations . . . . . . . . . . . . . . . . . . . 10

2.2.3 Amplifier Loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2.3 Outphasing with Chireix Combiner . . . . . . . . . . . . . . . . . . . . . . 13

2.3.1 Chireix Analysis with Ideal Class-B PAs . . . . . . . . . . . . . . . 14

3 Emerging Outphasing Variants Study 19

3.1 PA-Engine Analogy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

3.2 A Brief Overview of PA Architectures . . . . . . . . . . . . . . . . . . . . . 21

3.3 Variants with an Isolating Combiner . . . . . . . . . . . . . . . . . . . . . 22

3.3.1 Outphasing with Energy Recovery (Turbo-LINC) . . . . . . . . . . 22

3.3.2 Asymmetric Multilevel Outphasing (AMO) . . . . . . . . . . . . . . 24

3.3.3 Modified Multilevel Variants . . . . . . . . . . . . . . . . . . . . . . 27

3.4 Variants with a Nonisolating Combiner . . . . . . . . . . . . . . . . . . . . 27

3.4.1 Adaptive Compensation with Active Elements . . . . . . . . . . . . 27

3.4.2 Input Amplitude Modulated Outphasing (IAMO) . . . . . . . . . . 27

3.5 Average Efficiency Calculations . . . . . . . . . . . . . . . . . . . . . . . . 28

3.6 Outphasing Paradox . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

4 Practical Considerations for Chireix PA Design 31

4.1 Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

4.2 Maximum Power Capability . . . . . . . . . . . . . . . . . . . . . . . . . . 33

4.3 Transistor Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

i

Page 14: Outphasing RF Power Ampli ers for Mobile Communication

Contents

4.4 Practical Chireix Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

4.4.1 Nonlinear Output Capacitance . . . . . . . . . . . . . . . . . . . . . 38

4.4.2 Implications on Chireix PA Design . . . . . . . . . . . . . . . . . . 43

4.4.3 Load Modulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

4.5 Bandwidth Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

4.5.1 Instantaneous Frequency . . . . . . . . . . . . . . . . . . . . . . . . 47

4.5.2 Modulation Accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . 48

4.5.3 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52

4.6 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

5 Chireix PA Design 55

5.1 Design Methodology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55

5.2 Simulation Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

5.3 Realization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59

6 Characterization 61

6.1 Measurement Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

6.1.1 Manual Configuration . . . . . . . . . . . . . . . . . . . . . . . . . 61

6.1.2 Digital Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 62

6.1.3 Calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63

6.1.4 LO Leakage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65

6.2 Characterization using Static Measurements . . . . . . . . . . . . . . . . . 66

6.2.1 Outphasing Measurements . . . . . . . . . . . . . . . . . . . . . . . 66

6.2.2 Low Power Measurements . . . . . . . . . . . . . . . . . . . . . . . 68

6.3 Real-Time Dynamic Measurement Results . . . . . . . . . . . . . . . . . . 68

7 Outlook & Summary 71

7.1 Future Work . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71

7.1.1 Source Second-Harmonic Termination . . . . . . . . . . . . . . . . . 71

7.1.2 Architecture Load-Pull . . . . . . . . . . . . . . . . . . . . . . . . . 72

7.1.3 Miscellaneous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

7.2 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76

7.3 Zusammenfassung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77

A Transmission Line Equations 81

B Some Probabilistic Notions 83

ii

Page 15: Outphasing RF Power Ampli ers for Mobile Communication

Contents

C Proof of the DC & Fundamental Component Expressions of the Nonlinear

Output Capacitance 85

D Code Samples 87

Abbreviations 104

List of Figures 105

List of Tables 109

Bibliography 111

Authored and Co-Authored Publications 119

Patent Submission 119

iii

Page 16: Outphasing RF Power Ampli ers for Mobile Communication

iv

Page 17: Outphasing RF Power Ampli ers for Mobile Communication

Chapter 1

Introduction

“...Having the forecasted traffic growth in mind, reducing the network energy

consumption must be a major objective for the next decade.”

— Nokia Technology Vision 2020 White Paper

With the existing communications throughput continuously being drifted towards higher

data rates (Fig. 1.1 and 1.2), bandwidth has become a scarce resource [1]. For physical

considerations linked to the transmission properties of an operating frequency, mobile

broadband was found to be best suited roughly for the 450 MHz to 5400 MHz range

[2]. This frequency limitation has urged communications researchers and engineers to

come up with ingenious methods in order to cope with the seemingly ever increasing

demand for an already occupied spectrum. Efforts have resulted in the emergence of

what is called spectrum efficient modulation techniques. Most engineering novelties come

at the expense of resolving the accompanied challenges they create during the course of

their development, and next generation communication systems is no exception. These

complex modulation techniques such as multiquadrature amplitude modulation (MQAM)

heavily exploit the signal’s variation in amplitude. While this allows to use the spectrum

more efficiently (given the same bandwidth, transceive significantly higher data rates than

feasible with older techniques), it comes at the hurdle of increased signal dynamics. As

the efficiency of a conventional PA degrades severely with increasing signal excursions, the

work on both single transistor PA classes [3] and PA architecture concepts [4] alleviating

this problem has been placed on track long time ago. Among several candidates, the

outphasing architecture targets the objective of transmitting high peak to average power

ratio (PAR) signals with high efficiency performance [5].

1.1 Background

Originally a differential architecture, Chireix’s outphasing PA was proposed in the begin-

nings of the 1930’s as a high efficiency solution [7, 8]. Throughout early 1970’s, it was

1

Page 18: Outphasing RF Power Ampli ers for Mobile Communication

1 Introduction

Figure 1.1: Global mobile data [6].

Figure 1.2: High-end devices multiply traffic [6].

employed in RCA’s ampliphase AM-broadcast transmitters [4, 9]. In that last decade,

it came into light at microwave frequencies under the acronym LINC (linear amplifica-

tion using nonlinear components) [10, 11]. Later on, a single ended implementation of

it was suggested and theoretically analyzed in [12]. Despite their high expectations, the

presented analyses were described to be difficult to follow in the microwave community,

and that their materialization remained scarce and unclear [13]. In this context, it can

be said that the analysis in [12] constituted a theoretical upper limit benchmark for how

far any practical realization of the Chireix PA using class-B devices can reach. In fact,

the original Chireix analysis was focused at vacuum tube PAs as the working horses for

amplifying the two outphased signals [8]. This work investigates the suitability of the

outphasing PA architecture for use in next generation base transceiver stations (BTSs).

A multitude of outphasing variants are analyzed and compared. Based on that, a prac-

tical study of the most prominent variant is presented. It deals with the considerations

required for the design of a Chireix PA using state-of-the-art solid-state technology. At

its heart, the study seeks for a better understanding of the importance of the harmonic

terminations in the Chireix combiner. The work culminates in a design methodology for

reproducible transistor-based Chireix PA designs. In addition, the work sheds the light on

a new alternative implementation applicable in specific cases. Throughout this process,

2

Page 19: Outphasing RF Power Ampli ers for Mobile Communication

1.2 Structure of the Work

it is attempted to cover all analytical, numerical, simulation and measurements aspects

of the topic.

1.2 Structure of the Work

Starting from the fundamentals, Chapter 2 provides a generalized analysis of the

Chireix architecture.

In Chapter 3, a study and comparison of modern emerging outphasing variants is

reported.

The outphasing analysis is expanded in Chapter 4 to consider several practical as-

pects. Besides technology, power abilities and bandwidth considerations, the Chap-

ter encompasses the effects of the presence of the nonlinear output capacitance of

the transistors and the critical consequences on Chireix PA design.

A design technique is subsequently proposed in Chapter 5 and a Chireix PA design

is enclosed.

The test setup dedicated for outphasing measurements is described in Chapter 6.

The characterization of the manufactured Chireix PA and measurement results are

presented.

Chapter 7 wraps-up with some recommendations and suggestions before conclud-

ing the study.

3

Page 20: Outphasing RF Power Ampli ers for Mobile Communication

4

Page 21: Outphasing RF Power Ampli ers for Mobile Communication

Chapter 2

Outphasing Architecture Analysis

“The variable load is then obtained by acting on the phase difference between the grid

excitations of the two parts of the final amplifier, whence the name of “outphasing”

modulation given to the system.”

— Henry Chireix, High Power Outphasing Modulation

The outphasing topology consists of a signal component separator (SCS) that splits the

generally amplitude modulated (AM) and phase modulated (PM) signal into two PM

signals such that their sum is equivalent to the original signal1. Since the resulting signals

are only PM, the outphasing concept suggests then the usage of two efficient nonlinear

amplifiers to perform amplification just before the final step of signal summation, thus

allowing to recapture ideally an amplified replica of the input. A basic depiction of the

concept is shown in Fig. 2.1. For high power BTS applications, the power delivered by

the SCS needs to be amplified by predrivers (P1 and P2) and drivers (D1 and D2) before

reaching the final stage outphasing PAs. When it comes to the combiner’s implemen-

tation, two families are to be distinguished: the matched (lossy but isolating) combiner

family and the lossless one (but not matched, not isolating). In this Chapter, deriva-

tions of the primitive two implementations using Wilkinson and Chireix combiners are

presented. First the Wilkinson case is considered. Since they share much of the mathe-

matics, the Chireix combiner case is subsequently presented building upon the former’s

derivation. Unlike the original derivations [8, 12], the following is generalized to account

for the asymmetric signals case. This turns out to be useful when considering more so-

phisticated implementations in Chapter 3. As a starting point, the basic outphasing idea

is introduced.

1The SCS realization is discussed in detail in Chapter 6. Here it is shown that the Outphasing archi-

tecture accepts analog as well as digital signals, e.g. with switched-mode PAs.

5

Page 22: Outphasing RF Power Ampli ers for Mobile Communication

2 Outphasing Architecture Analysis

Figure 2.1: Outphasing PA architecture.

2.1 Fundamentals

An AM and PM signal to be amplified has the general form:

sptq rptq sinpωt φptqq (2.1)

Denoting max(rptq) by 2r0, sptq can be rewritten as

sptq 2r0 rptq2r0

sinpωt φptqq 2r0 cospθptqq sinpωt φptqq (2.2)

where accordingly,

θptq arccos

rptq2r0

(2.3)

Thus, sptq can be split using trigonometric identities into

sptq r0 sinpωt φptq θptqq r0 sinpωt φptq θptqq s1ptq s2ptq (2.4)

where

s1ptq r0 sinpωt φptq θptqq (2.5a)

s2ptq r0 sinpωt φptq θptqq (2.5b)

The resulting two only PM signals can now be amplified separately by two PAs biased

in a nonlinear mode with an equivalent voltage gain G and combined, resulting in an

efficiently amplified version of the original AM-PM signal:

G s1ptq G s2ptq G ps1ptq s2ptqq G sptq (2.6)

6

Page 23: Outphasing RF Power Ampli ers for Mobile Communication

2.2 Outphasing with Wilkinson Combiner

Denoting by v1ptq and v2ptq the amplified signals G s1ptq and G s2ptq, omitting the term

φptq and rewriting θptq as θ for simplicity results without loss of generality in the following

output, i.e. amplified, signals

v1ptq V0 sinpωt θq (2.7a)

v2ptq V0 sinpωt θq (2.7b)

where V0 G r0. Momentarily omitting φptq is justified by noticing that reincorporating

it in each of the individual signals allows restoring the amplified signal’s phase since the

latter can be written as

vptq v1ptq v2ptq V0 sinpωt θq V0 sinpωt θq

2V0 sin

ωt θ ωt θ

2

cos

ωt θ ωt θ

2

2V0 cospθq sinpωtq (2.8)

2.2 Outphasing with Wilkinson Combiner

In this Section, the analysis of the outphasing architecture with the classical Wilkinson

isolating combiner is carried out. Some useful mathematical and transmission line (TL)

notions can be found in appendix A. The topology of this architecture is depicted in Fig.

2.2. Accounting for a generalized outphasing action, the output voltages have the form

Input

signalSCS

PA1

PA2

Figure 2.2: Outphasing with Wilkinson combiner.

7

Page 24: Outphasing RF Power Ampli ers for Mobile Communication

2 Outphasing Architecture Analysis

v1pλ4, tq V1 sinpωt θ1q V1 cospωt θ1 π

2q (2.9a)

v2pλ4, tq V2 sinpωt θ2q V2 cospωt θ2 π

2q (2.9b)

2.2.1 Load Voltage

Using A.2a, the following identity can be written

rVipzq V i ejβz V

i ejβz V i pejβz Γie

jβzq (2.10)

where rVipzq denotes the phasor voltage at a given location z on the ith transmission line

with a forward and backward wave amplitudes (V i , V

i ) and a reflection coefficient Γi

(Fig. 2.2). Applying (2.10) at z λ4

results in

rV1pλ4q jV

1 p1 Γ1q (2.11a)

rV2pλ4q jV

2 p1 Γ2q (2.11b)

Simultaneously, (2.9a) and (2.9b) can be translated into the phasor forms

rV1pλ4q V1 ejpπ

2θ1q V1=pπ

2 θ1q (2.12a)

rV2pλ4q V2 ejpπ

2θ2q V2=pπ

2 θ2q (2.12b)

Therefore using the last 4 equations, the following ratio can be obtained

V 1 p1 Γ1qV

2 p1 Γ2q V1

V2

=pθ1 θ2q (2.13)

Similarly at z 0,

rV1p0q V 1 p1 Γ1q (2.14a)rV2p0q V 2 p1 Γ2q (2.14b)rV1p0q rVL (2.14c)rV2p0q rVL (2.14d)

and thereforeV

1 p1 Γ1qV

2 p1 Γ2q 1 (2.15)

Using (2.13) and (2.15), the following can be written

1 Γ1

1 Γ1

1 Γ2

1 Γ2

V1

V2

=pθ1 θ2q (2.16)

8

Page 25: Outphasing RF Power Ampli ers for Mobile Communication

2.2 Outphasing with Wilkinson Combiner

Replacing Γ1,2 by their form A.3 results in

1 ZL1Z0

ZL1Z0

1 ZL1Z0

ZL1Z0

1 ZL2Z0

ZL2Z0

1 ZL2Z0

ZL2Z0

V1

V2

=pθ1 θ2q (2.17)

Simplifying gives the following impedances ratio

ZL2

ZL1

V1

V2

=pθ1 θ2q (2.18)

On the other hand, since rIL rI1p0q rI2p0q, and all of rVL, rV1p0q and rV2p0q are equal ñrVL

ZL

rV1p0qZL1

rV2p0qZL2

rVL

ZL1

rVL

ZL2

(2.19)

This means effectively that the parallel combination of ZL1 and ZL2 is equivalent to ZL

and therefore

ZL1 ZL2 ZL

ZL2 ZL

(2.20a)

ZL2 ZL1 ZL

ZL1 ZL

(2.20b)

Substituting this in (2.18) and solving for the impedances results in

ZL1 ZL p1 V2

V1

=pθ1 θ2qq (2.21a)

ZL2 ZL p1 V1

V2

=pθ1 θ2qq (2.21b)

From (2.11a) and (2.12a)

V 1 V1=pθ1q

Γ1 1(2.22)

Substituting this in (2.14a) then employing the obtained expression of the impedance ZL1

in (2.21a) enables to write

rVL V1=pθ1q Γ1 1

Γ1 1

ZL1

Z0

V1=pθ1q

ZL

Z0

p1 V2

V1

=pθ1 θ2qq V1=pθ1q

ZL

Z0

pV1=pθ1q V2=pθ2qq (2.23)

Finally, the output or load voltage expression as a function of time can be written as

vLptq ZL

Z0

V1 sinpωt θ1 π

2q ZL

Z0

V2 sinpωt θ2 π

2q

ZL

Z0

V3 sinpωt θ3 π

2q (2.24)

9

Page 26: Outphasing RF Power Ampli ers for Mobile Communication

2 Outphasing Architecture Analysis

where

V 23 pV1 cos θ1 V2 cos θ2q2 pV1 sin θ1 V2 sin θ2q2 V 2

1 V 22 2V1 V2 cospθ1 θ2q (2.25a)

θ3 arctan

V1 sin θ1 V2 sin θ2

V1 cos θ1 V2 cos θ2

(2.25b)

For the symmetric case where V1 V2 V0 and θ1 θ2 θ, this simplifies to

ZL1 ZL p1 =p2θqq (2.26a)

ZL2 ZL p1 =p2θqq (2.26b)

ñvLptq 2

ZL

Z0

V0 cospθq sinpωt π

2q (2.27)

The obtained expression is analogous to (2.8) with the delay being caused by the λ4

lines.

2.2.2 Power and Efficiency Calculations

The isolation current traversing the isolation resistor 2ZL has the phasor form

rIiso rV1pλ

4q rV2pλ

4q

2ZL

(2.28)

For ZL real, the power dissipated in the isolation resistor and the power delivered to the

load have the respective expressions

Pdiss 1

2<"rV1pλ

4q rV2pλ

4q rIiso*

V 21 V 2

2 2V1 V2 cospθ1 θ2q4ZL

(2.29)

PL 1

2<!rVL rIL) 1

2ZL

rVL

2 ZL

2Z20

V 23 (2.30)

For Z0 ?

2ZL

PL V 21 V 2

2 2V1 V2 cospθ1 θ2q4ZL

(2.31)

The generalized Wilkinson combiner’s efficiency is therefore

η PL

PL Pdiss

1

2 V

21 V 2

2 2V1 V2 cospθ1 θ2qV 2

1 V 22

(2.32)

If V1 V2 V0 and θ1 θ2 θ, the efficiency reduces to the common expression

ηsym cos2 θ (2.33)

10

Page 27: Outphasing RF Power Ampli ers for Mobile Communication

2.2 Outphasing with Wilkinson Combiner

To verify the validity of (2.32), the output and input voltages and currents of the circuit

shown in Fig. 2.3 are simulated for V2 ranging between 0 V and 50 V, while arbitrarily

setting the other parameters to V1 50 V, θ1 70 and θ2 30 .

Vload

v2

v1

VtSine

SRC2

Phase=-Theta2

Amplitude=V2

VtSine

SRC1

Phase=Theta1

Amplitude=V1

MLIN

TL2

MLIN

TL1

P_Probe

Pout

I

P

I_Probe

I_Probe2

I_Probe

I_Probe1

I_Probe

Iout

P_Probe

Pout2

I

P

P_Probe

Pout1

I

P

R

Risolation

R=100 Ohm

R

Rload

R=50 Ohm

Figure 2.3: Efficiency assessment circuit schematic.

The simulated efficiency is then calculated as

ηsim Pout

Pout1 Pout2

(2.34)

(2.32) is evaluated for the same parameter values, as well as the Wilkinson’s efficiency

expression presented in [14]. The simulated curve plotted in Fig. 2.4 confirms the derived

analytical efficiency expression. The earlier form encountered in literature presents an

incomplete description of the ideal Wilkinson’s combiner efficiency, where it is limited to

selections of V1, V2, θ1 and θ2 such that θ3 is an arbitrary constant2.

0 5 10 15 20 25 30 35 40 45 505

10

15

20

25

30

35

40

45

50

V2 (V)

η(%

)

Simulated (2.34)Analytical (2.32)Analytical [14]

Figure 2.4: Wilkinson’s η assessment: V1 50 V, θ1 70 and θ2 30 .

2If 0 V1,2 and 0 ¤ θ1,2 ¤ π2 then θ3 shall be 0 for outphasing amplifier applications.

11

Page 28: Outphasing RF Power Ampli ers for Mobile Communication

2 Outphasing Architecture Analysis

2.2.3 Amplifier Loads

From (A.2b), rIL1pλ4q j

V 1

Z0

p1 Γ1q (2.35)

Substituting V 1 by its form in (2.22) and solving results in

rIL1pλ4q j

2ZL

rV1=pθ1q V2=pθ2qs (2.36)

Similarly rIL2pλ4q j

2ZL

rV1=pθ1q V2=pθ2qs (2.37)

rIiso rV1pλ

4q rV2pλ

4q

2ZL

V1=pπ2 θ1q V2=pπ

2 θ2q

2ZL

j

2ZL

rV1=pθ1q V2=pθ2qs (2.38)

The currents generated by the PAs are therefore

rI1 rIL1pλ4q rIiso j

ZL

V1=pθ1q (2.39a)

rI2 rIL2pλ4q rIiso j

ZL

V2=pθ2q (2.39b)

The impedances seen by each amplifier are respectively

Z1 rV1pλ

4qrI1

(2.40a)

Z2 rV2pλ

4qrI2

(2.40b)

Using (2.12a) and (2.39a), this translates into

Z1 V1=pπ

2 θ1q

jZL V1=pθ1q

jV1=pθ1q jZL V1=pθ1q

ZL (2.41)

Similarly Z2 ZL ñZ1 Z2 ZL (2.42)

This means that the loads seen by each amplifier are constants no matter what the

other variables are. Employing a Wilkinson combiner signifies that no load modulation

is occurring. This is an integral difference to the Chireix combiner case which is analyzed

in the next Section.

12

Page 29: Outphasing RF Power Ampli ers for Mobile Communication

2.3 Outphasing with Chireix Combiner

2.3 Outphasing with Chireix Combiner

A first step toward an RF realization of the Chireix combiner would be to omit the

isolating resistance of the Wilkinson combiner (Fig. 2.2). The resulting impedances that

the PA devices see then become

Z1 rV1pλ

4qrIL1pλ

4q Z2

0

ZL1

(2.43a)

Z2 rV2pλ

4qrIL2pλ

4q Z2

0

ZL2

(2.43b)

For Z0 ?2ZL and considering the symmetric case using (2.26a) and (2.26b), the

impedances can be written as

Z1 2ZL

p1 =p2θqq ZL p1 j tanpθqq (2.44a)

Z2 2ZL

p1 =p2θqq ZL p1 j tanpθqq (2.44b)

The admittances follow then as

Y1 1

Z1

p1 =p2θqq2ZL

(2.45a)

Y2 1

Z2

p1 =p2θqq2ZL

(2.45b)

ñ

Y1 1 cosp2θq2ZL

jsinp2θq

2ZL

(2.46a)

Y2 1 cosp2θq2ZL

jsinp2θq

2ZL

(2.46b)

For Yi Gi jBi, the conductances and susceptances are

G1 1 cosp2θq2ZL

(2.47a)

B1 sinp2θq2ZL

(2.47b)

G2 1 cosp2θq2ZL

(2.47c)

B2 sinp2θq2ZL

(2.47d)

The described configuration might be named the uncompensated Chireix combiner. Be-

sides performing outphasing on the excitation sources, Chireix’s consequent idea is that

13

Page 30: Outphasing RF Power Ampli ers for Mobile Communication

2 Outphasing Architecture Analysis

by compensating the susceptances at a specific angle θc, the impedances seen by the PA

devices are set to exhibit only a real part. In power engineering, this is known as reactive

power control. Together with the usage of PAs in their nonlinear regime, this would bring

overall efficiency benefits as shown in the following.

2.3.1 Chireix Analysis with Ideal Class-B PAs

The analysis so far has required that the voltage excitations (2.9a) and (2.9b) be sinusoidal

with no further conditions. Therefore in this ideal case, the voltages should be free of

harmonic content. This can be approached by assuming that all harmonics are terminated

with a short circuit. From this perspective, the pure class-B PA constitutes an ideal

candidate for the PA blocks of the outphasing architecture. Besides its sinusoidal output

voltage waveform, its uncompromised power for efficiency over class-A PA [13] makes

it ultimately suitable for the outphasing architecture. One could as well consider the

use of class-C PA seeking higher efficiency, however this is expected to occur at the

expense of available output power as the class-C PA’s power continuously decreases below

class-A’s power with the conduction angle decreasing below π [13]. The magnitude of

the fundamental component of class-B PA’s output current in relation to the consumed

current IDC can be found by applying the Fourier series decomposition to the output

current waveform. From [12]:

IDC 2

πrIfund

(2.48)

Simultaneously, the fundamental output currents can be written as:

rI1 Y1 rV1pλ4q (2.49a)

rI2 Y2 rV2pλ4q (2.49b)

Therefore by noticing that (2.46a) and (2.46b) assume a complex conjugate relationship

(Y1 Y 2 ) and that for the symmetric case

rV1pλ4q rV2pλ

4q V0, the consumption

currents can be expressed as:

IDC1 IDC2 2

π V0 |Yi| (2.50)

Assuming a full-swing all-time positive output voltage waveform for the class-B blocks,

their DC voltage should be equal to V0. The combined DC power consumption is hence:

PDC 2V0 IDCi 4

π V 2

0 |Yi| (2.51)

Adapting (2.31) to the symmetric case results in:

PL V 20

ZL

cos2pθq (2.52)

14

Page 31: Outphasing RF Power Ampli ers for Mobile Communication

2.3 Outphasing with Chireix Combiner

The efficiency of an outphasing amplifier employing an uncompensated Chireix combiner

and ideal class-B blocks is therefore:

η PL

PDC

π

4 cos2 θ

ZL |Yi| (2.53)

A direct observation for improving the efficiency is trying to diminish the magnitude |Yi|.The second step toward the Chireix combiner therefore is to add shunt jX and jXelements compensating respectively the susceptances (2.47b) and (2.47d) at a specific

outphasing angle θc so that

X sinp2θcq2ZL

(2.54)

The resulting topology is depicted in Fig. 2.5. To calculate the resulting new Yi ad-

Figure 2.5: Outphasing with Chireix combiner.

mittances, it is sufficient to add the terms jX and jX to respectively (2.46a) and

(2.46b); as long as the voltage excitation sources are symmetrically sinusoidal, introduc-

ing shunt admittances is valid and is not expected to perturb the analysis. Therefore the

admittances become

Y1 1 cosp2θq2ZL

jsinp2θq

2ZL

jsinp2θcq

2ZL

Y2 1 cosp2θq2ZL

jsinp2θq

2ZL

jsinp2θcq

2ZL

(2.55a)

(2.55b)

Fig. 2.6 shows on the Smith-chart the impedances of the uncompensated Chireix combiner

(2.44) along with the impedances of the compensated Chireix combiner (reciprocal of 2.55)

with an illustrative compensation angle θc 15 . As inferred by the equations, the real

part in the uncompensated case is constant. Although the combiner itself is lossless,

this hints to an overall continuous degradation of efficiency as the operation point moves

15

Page 32: Outphasing RF Power Ampli ers for Mobile Communication

2 Outphasing Architecture Analysis

away from desirable load values while θ and subsequently the delivered power is being

modulated. In a striking difference to that and to the Wilkinson combiner case (2.42),

the real parts of the compensated Chireix impedances3 do vary as θ is being modulated.

Recalling that θ’s modulation is implied by the input signal’s magnitude (2.3), both the

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.2

1.4

1.6

1.8

2.0

3.0

4.0

5.0

10 2020

-20

10

-10

5.0

-5.0

4.0

-4.0

3.0

-3.0

2.0-2

.0

1.8

-1.8

1.6

-1.6

1.4

-1.4

1.2

-1.2

1.0

-1.0

0.9

-0.9

0.8

-0.8

0.7

-0.7

0.6

-0.6

0.5-0

.5

0.4

-0.4

0.3

-0.3

0.2

-0.2

0.1

-0.1

Theta (0.000 to 89.000)

Ga

mm

a1U

Ga

mm

a2U

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.2

1.4

1.6

1.8

2.0

3.0

4.0

5.0

10 20

20

-20

10

-10

5.0

-5.0

4.0

-4.0

3.0

-3.0

2.0-2

.0

1.8

-1.8

1.6

-1.6

1.4

-1.4

1.2

-1.2

1.0

-1.0

0.9

-0.9

0.8

-0.8

0.7

-0.7

0.6

-0.6

0.5-0

.5

0.4

-0.4

0.3

-0.3

0.2

-0.2

0.1

-0.1

Theta (0.000 to 89.000)

Ga

mm

a1C

Ga

mm

a2C

Figure 2.6: Uncompensated (left) vs. compensated Chireix combiner impedances loci.

real and imaginary parts of the admittances (2.55) and their corresponding impedances are

in fact being indirectly modulated by the input signal’s magnitude rptq. This is a pivotal

point for the Chireix PA as it means that the device’s load is modulated for each input

power level and consequently for each output power level. That load modulation behavior

is what exactly classifies the Chireix PA as a typical load modulated PA architecture. The

impedance loci dependence on the design parameter θc and on ZL is shown in Fig. 2.7.

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.2

1.4

1.6

1.8

2.0

3.0

4.0

5.0

10 20

20

-20

10

-10

5.0

-5.0

4.0

-4.0

3.0

-3.0

2.0-2

.0

1.8

-1.8

1.6

-1.6

1.4

-1.4

1.2

-1.2

1.0

-1.0

0.9

-0.9

0.8

-0.8

0.7

-0.7

0.6

-0.6

0.5-0

.5

0.4

-0.4

0.3

-0.3

0.2

-0.2

0.1

-0.1

Theta (0.000 to 89.000)

Gam

ma1

Gam

ma2

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.2

1.4

1.6

1.8

2.0

3.0

4.0

5.0

10 20

20

-20

10

-10

5.0

-5.0

4.0

-4.0

3.0

-3.0

2.0-2

.0

1.8

-1.8

1.6

-1.6

1.4

-1.4

1.2

-1.2

1.0

-1.0

0.9

-0.9

0.8

-0.8

0.7

-0.7

0.6

-0.6

0.5-0

.5

0.4

-0.4

0.3

-0.3

0.2

-0.2

0.1

-0.1

Theta (0.000 to 89.000)

Gam

ma1

Gam

ma2

Figure 2.7: Impedance loci sets for different θc and ZL settings. The arrows indicate

orientations of increasing (left) θc and (right) ZL, respectively from 10 to 30

in 5 steps for ZL 50 Ω, and from 10 Ω to 50 Ω in 10 Ω steps for θc 15 .

3Recall that the real part of a complex impedance is not equal to the reciprocal of the real part of its

equivalent admittance.

16

Page 33: Outphasing RF Power Ampli ers for Mobile Communication

2.3 Outphasing with Chireix Combiner

As suggested by (2.52), the power back-off (PBO) level can be written as the following

function of θ

PBO 10 log

maxpPLq

PL

20 logpcospθqq (2.56)

The real and imaginary parts of the compensated Chireix impedances can now be replotted

as a function of the PBO. The load modulation behaviour of the Chireix PA can hence

be clearly seen in Fig. 2.8 and 2.9, where only Z1 has been shown since Z1 Z2 .

−30 −27 −24 −21 −18 −15 −12 −9 −6 −3 00

500

1000

1500

2000

PBO (dB)

realZ1(Ω

)

θc =10

θc =15

θc =20

θc =25

θc =30

(a)

−30 −27 −24 −21 −18 −15 −12 −9 −6 −3 0−1500

−1000

−500

0

500

1000

PBO (dB)

imagZ1(Ω

)

θc =10

θc =15

θc =20

θc =25

θc =30

(b)

Figure 2.8: Modulated (a) real and (b) imaginary parts of the compensated Chireix

impedance Z1 for different compensation angle settings; ZL 50 Ω.

−30 −27 −24 −21 −18 −15 −12 −9 −6 −3 00

200

400

600

800

PBO (dB)

realZ1(Ω

)

ZL =10 Ω

ZL =20 Ω

ZL =30 Ω

ZL =40 Ω

ZL =50 Ω

(a)

−30 −27 −24 −21 −18 −15 −12 −9 −6 −3 0−600

−400

−200

0

200

PBO (dB)

imagZ

1(Ω

)

ZL =10 Ω

ZL =20 Ω

ZL =30 Ω

ZL =40 Ω

ZL =50 Ω

(b)

Figure 2.9: Modulated (a) real and (b) imaginary parts of the compensated Chireix

impedance Z1 for different ZL settings; θc 15 .

The incorporation of compensation elements into the combiner does not only compensate

the susceptances and consequently boosts the power factor, but remarkably results in a

modulation of the real part instead of a constant one in (2.44). It can be noted that

the real part peaks at a PBO that is related to θc. The relationship can be found by

determining the real part of the reciprocal of (2.55). On the other hand, the imaginary

part nulls two times, one corresponding to θ θc and the other one to θ π2 θc.

17

Page 34: Outphasing RF Power Ampli ers for Mobile Communication

2 Outphasing Architecture Analysis

The ideal class-B Chireix efficiency expressed in (2.53), can now be reevaluated for the

compensated Chireix combiner as

η π

2 cos2 θ

|1 cosp2θq j sinp2θq j sinp2θcq| (2.57)

and plotted as shown in Fig. (2.10) for an arbitrarily selected θc 15 compensation.

The efficiency advantage can be noticed by comparison with the outphasing efficiency

of the uncompensated case and when employing a Wilkinson combiner (2.33). Due to

Figure 2.10: Outphasing efficiencies assuming ideal class-B PA blocks.

the nature of the function (2.57), two efficiency peaks emerge for the Chireix curve, one

located at θ θc and the other at θ π2θc. If PBOHD and PBOLD designate how deep

respectively the high drive and low drive peaks fall in PBO, and ∆ their distance in dB,

then

PBOHD 20 logpcospθcqqPBOLD 20 logpcosp90 θcqq

∆ PBOHD PBOLD

20 logpcotpθcqq

(2.58a)

(2.58b)

(2.58c)

At this stage, it should be mentioned that linearity is not questioned with regard to the

two PAs’ class of operation since the reconstruction of the amplitude in an outphasing

PA is ultimately performed by modulating θ. In the following Chapter, some emerging

outphasing variants are considered.

18

Page 35: Outphasing RF Power Ampli ers for Mobile Communication

Chapter 3

Emerging Outphasing Variants Study

“Methods hitherto employed for reducing power consumption include the high level

class B modulation system, such as is used at WLW, and the ingenious method of

“outphasing modulation” invented by Chireix and employed in a number of European

installations.”— William H. Doherty, A New High Efficiency Power Amplifier for Modulated Waves

In addition to the original concept, several outphasing variants have appeared in the

last two decades. These suggested efficiency enhancement techniques can be classified

into two outphasing PA families; one employing an isolating combiner where no mutual

load modulation is occurring, and the other employing a nonisolating combiner, e.g. the

Chireix combiner, with some further external mechanism. In this Chapter, an assessment

of a multitude of these variants is reported. After defining a benchmark for the efficiency

calculations, a comparison of the discussed variants is presented.

3.1 PA-Engine Analogy

To gain an understanding of the efficiency enhancement techniques applicable for PAs in

general, it might be handy to draw an analogy between the PA as a system converting

DC to RF energy, and the internal combustion engine converting chemical to mechanical

energy. Fig 3.1 shows the fuel consumption of a traditional car. With the x-axis (speed)

relating power and the y-axis (mpg) relating efficiency, it can be seen how efficiency is

not the same for all output powers. The car performs best in terms of fuel consump-

tion around 40 mph (65 km/h). The inevitable need for accelerating and decelerating

requires however a system to modulate the engine’s load. Without a gearbox it would

be extremely hard to accelerate from a stationary position while the gear ratio is 5 for

instance. If it is not going to choke, the car would burn a lot of fuel without barely moving

a tiny distance forward. A gearbox allows to present the engine with the “right” load

at each operating output power level or output power level interval. Considering now

19

Page 36: Outphasing RF Power Ampli ers for Mobile Communication

3 Emerging Outphasing Variants Study

Figure 3.1: A 1986 VW Golf GTI fuel consumption [15, 16].

the drain efficiency of any conventional single transistor PA, say class-E PA [17], it can

be noted how efficiency steeply drops from a considerably high efficiency figure around

75 % or more as the delivered power level decreases (Fig. 3.2). With the appearance

of ever increasing high PAR communication schemes and a continuously overshadowing

alert for “green” communications, the need for PA load modulation mechanisms becomes

imminent. In this sense, it can be said that the Doherty architecture [18] for example,

(a)

25 27 29 31 33 35 37 39 41 43 45 470

10

20

30

40

50

60

70

80

Pout (dBm)

Dra

in E

ffici

ency

(%

)

(b)

Figure 3.2: (a) A realized class-E GaN HEMT (b) measured at 2170 MHz.

especially an asymmetric configuration [19], resembles an automobile equipped with a

hybrid engine technology where an electric motor would solely be running at low speeds,

and the gasoline engine kicking-off at higher speeds being more efficient there, reducing

thus the overall energy consumption. Therefore the expression heavy load modulation

should not necessarily be bearing negative connotations. In fact, load modulation for any

load modulated architecture is a two edged sword depending on the degree of success of a

(nonisolating) combiner’s design. A fitting combiner will present the PAs with the “right”

loads at the operating output power levels. Otherwise the impedance loci will be located

in undesired places on the Smith-chart resulting in low efficiency performance.

20

Page 37: Outphasing RF Power Ampli ers for Mobile Communication

3.2 A Brief Overview of PA Architectures

3.2 A Brief Overview of PA Architectures

In conjunction with voltage biasing, configurations of usually single amplifying devices,

e.g. transistors, are charted according to their respective fundamental and harmonic

terminations. While this categorization results in “PA classes” each convenient for certain

applications [3], “PA architectures” employ PA classes as their building blocks toward

obtaining a further improved dedicated amplification performance. A classification of

some PA architectures is presented in Fig. 3.3. These architectures are broadly split

into two categories: the one that rely mainly on bias modulation or control to produce

output power with high efficiency, and the one that does so by modulating the load. By

explicit load modulation, it is meant the category where the load is directly modulated, for

instance by action of dynamically controlling varactors in the output matching circuitry.

The implicit category on the other hand denotes the architectures where load modulation

is taking place due to other artifacts. A famous example is the Doherty architecture [18]

where the main amplifier’s load is intended to be carefully modulated by the action of the

peaking amplifier, which is in turn modulated by the input signal. On the other hand,

the loads of the two constitutive PAs of a Chireix amplifier are modulated by the action

of the outphasing angle θ, which is in turn modulated by the input signal too1. From this

perspective, some might say that the Chireix and Doherty PAs are two solution points in

the same multidimensional optimization field, one acting on the relative phase difference

between the split signals and the other on the individual power levels. It remains to

Figure 3.3: A classification of some PA architectures.

be mentioned that other hybrid combinations sharing one or more of the traits of the

architectures in Fig. 3.3 may as well exist. These include several emerging outphasing

variants considered in the following.

1For more details, please refer to Chapter 2 (e.g. Fig. 2.8 and 2.9).

21

Page 38: Outphasing RF Power Ampli ers for Mobile Communication

3 Emerging Outphasing Variants Study

3.3 Variants with an Isolating Combiner

3.3.1 Outphasing with Energy Recovery (Turbo-LINC)

This suggests replacing the isolation resistor for instance of a Wilkinson combiner with

a kind of energy harvester that feeds back the otherwise lost as heat energy to the DC

supply, such that its input resistor be equal to the isolating resistor (usually 2ZL) [20],

[21]. The idea can be compared to turbocharging where the hot exhaust gases strike the

blades of a turbine for compressing oxygen-rich air and feeding it back to the combustion

chamber (Fig. 3.4). Additional oxygen allows the engine to burn gasoline more completely,

generating more performance and therefore improving the engine’s efficiency. A basic

circuit illustrating the concept is shown in Fig. 3.5.

Figure 3.4: Turbocharged engine [22].

(a)

CC1

I_ProbeIout

I_ProbeI_D2

I_ProbeI_D3

I_ProbeI_D1

I_ProbeI_D4

d20D3

d20D2

d20D4

d20D1 Back to DC

voltage supply

(b)

Figure 3.5: (a) Outphasing with energy recovery using (b) a bridge rectifier.

In the following, an attempt to benchmark the efficiency capabilities of this proposition

22

Page 39: Outphasing RF Power Ampli ers for Mobile Communication

3.3 Variants with an Isolating Combiner

is presented. The different power quantities can be written as:

PL π

4 PDC cos2pθq (3.1a)

PinH π

4 PDC p1 cos2pθqq (3.1b)

PouH ηH PinH (3.1c)

ηTurbo-LINC PL

PDC PouH

(3.1d)

where PinH, PouH and ηH are respectively the input power, output power and efficiency

conversion of the harvester circuit. With the harvester made of a rectifier and a DC-

DC converter, a realistic form of its conversion efficiency reflecting the fact that the

rectifier’s output drops with smaller differential input voltage (i.e. with decreasing θ) can

be formulated as:

ηH ηDC-DC ηRectifier ηDC-DC α sin2pθq (3.2)

where α is dependent on the rectifier’s topology and diodes properties. It must be men-

tioned that the diodes should be supporting high peak-inverse-voltages on the order of

100 V which constitutes a technological challenge at high power HF applications. The

overall efficiency of this variant can hence be approximated by

ηTurbo-LINC cos2pθq4π α p1 cos2pθqq sin2pθq ηDC-DC

(3.3)

An upper limit of the efficiency performance of this variant can be found by selecting α

and ηDC-DC to emulate the highest possible efficiency of the harvester (α ηDC-DC 1).

90 80 70 60 50 40 30 20 10 00

102030405060708090

100

θ (°)

Effi

cien

cies

(%

)

Wilkinson−LINCTurbo−LINCHarvester

−Inf −15.21 −9.32 −6.02 −3.84 −2.31 −1.25 −0.54 −0.13 0

PBO (dB)

Figure 3.6: Outphasing with energy recovery assuming ideal class-B PA blocks.

Although a tangible improvement over outphasing with the traditional Wilkinson com-

biner can be seen (Fig. 3.6) (the limit is about 35 % efficiency at 6 dB PBO), it can be

23

Page 40: Outphasing RF Power Ampli ers for Mobile Communication

3 Emerging Outphasing Variants Study

concluded that this architecture falls short of competing with the original Chireix (Fig.

2.10) and other currently favored architectures.

3.3.2 Asymmetric Multilevel Outphasing (AMO)

Another suggestion is to continuously switch the drain voltages among discrete levels in

accordance with the input signal so that the overall average efficiency is maximized [23],

[24]. Recalling the expression of the load voltage for asymmetric operation (2.24), V1 and

V2 do not have to be bound to fixed levels, rather could be made to adapt from a range

of n levels (and have subsequently θ1 and θ2 determined) to achieve the highest possible

efficiency for each desired output level. The optimization problem for the asymmetric

2-level case is therefore finding the two optimum levels V a and V

b that both of V1 and

V2 could take for maximizing the expected efficiency, that is finding SV1

V2

P S; S

#V a

V a

,

V a

V b

,

V b

V a

,

V b

V b

+

It is important that the selection of the free variables V1, V2, θ1 and θ2 does not introduce

any phase distortion to the transmission. While these parameters are tailored for high

efficiency, their selection should always result in a constant θ3 value (2.24). This could be

ensured if made according to the triangle sketch (Fig. 3.7), satisfying thereby

V1 sin θ1 V2 sin θ2 (law of sines)

Denoting the maximum desired amplitude value V3 by 2V0, and taking the still unop-

Figure 3.7: Asymmetric Outphasing.

timized Va,b levels such as Va ¤ Vb without loss of generality, implies by looking at the

efficiency and output voltage expressions in (2.24) and (2.32), that for maximizing the

24

Page 41: Outphasing RF Power Ampli ers for Mobile Communication

3.3 Variants with an Isolating Combiner

efficiency while still covering the desired output voltage range, the following should be

satisfied: Va V0 ¤ Vb. Using (2.25a), the entity to be maximized is

ηavg 2V0»0

1

2 V 2

3

V 21 V 2

2

ppV3q dV3 (3.4)

Hence, the proper selection of V1 and V2 should be made according to the mapping

V1 Va;V2 Va for 0 V3 ¤ 2Va

V1 Va,b;V2 Vb,a for 2Va V3 ¤ Va Vb

V1 Vb;V2 Vb for Va Vb V3 ¤ 2V0

This produces the following writing

ηavg 1

2

1

2V 2a

2Va»0

V 23 ppV3qdV3 1

V 2a V 2

b

VaVb»2Va

V 23 ppV3qdV3 1

2V 2b

2V0»VaVb

V 23 ppV3qdV3

(3.6)

For a Rayleigh distributed envelope signal, e.g. one of a W-CDMA signal [25], the proba-

bility density function (PDF) of the load voltage’s envelope VL (and therefore of V3) and

its cumulative distribution function (CDF) are respectively given by

ppVLq VL

σ2 e

V 2L

2σ2 (3.7)

P pVLq 1 eV 2L

2σ2 (3.8)

where σ is the statistical mode2. With V3 bounded, it is practical to define a statistically

significant maximum σ0 value for σ such that P pmaxpV3q, σ0q 1, resulting in σ0 V0. This allows to write the approximation e

V 2bσ2 0 for high PAR W-CDMA signals.

Integrating by parts, expanding and approximating results in

ηavg 1 σ2

2V 2a

2V 2a σ2

V 2a V 2

b

e 2V 2

aσ2 σ2

2V 2a

(3.9)

ñ V b V0. Finding V

a is realized by numerically finding the root of the equationBηavgBVa

VbV0

0. Using the relation µ σ aπ2

linking the mode to the average µ of a

Rayleigh distributed signal, the quasianalytical V a and V

b values are plotted and their

counterparts obtained from a brute force search (BFS) for the maximum ηavg against the

PAR and shown in Fig. 3.8. Adapting the asymmetric 2-level outphasing architecture for

2Appendix B provides relevant statistical notions.

25

Page 42: Outphasing RF Power Ampli ers for Mobile Communication

3 Emerging Outphasing Variants Study

7.5 8 8.5 9 9.5 10 10.5 11 11.5 121015202530354045505560

W-CDMAVPARV*dBF

Opt

imal

VVol

tage

VLev

elsV

*VF

VbS *BFSF

VbS

VaS *BFSF

VaS

Figure 3.8: Optimal two levels (V0 50 V).

use with class-B PAs with possible drain voltage levels Va and Vb, the average efficiency

with a high PAR W-CDMA signal can be approximated by

η2L-AMO π

4

1 σ2

2V 2a

2V 2a σ2

V 2a V 2

b

e 2V 2

aσ2 σ2

2V 2a

(3.10)

The optimized average efficiency of the 2-level AMO PA can hence be plotted against

the PAR and compared to the traditional case (Fig. 3.9). Similarly the efficiency of the

2-level symmetric outphasing case is numerically computed and plotted for comparison.

The 2-level AMO clearly outperforms the other two cases, conveying the message that

a “hardware upgrade” (by adding levels) and a software one on top of it (by allowing

asymmetric operation) are both key elements for boosting the efficiency. In order to

7.5 8 8.5 9 9.5 10 10.5 11 11.5 125

10

15

20

25

30

35

40

W−CDMA PAR (dB)

Ave

rage

Effi

cien

cies

(%

)

Asymmetric 2−LevelSymmetric 2−LevelWilkinson−LINC

Figure 3.9: 2-Level AMO average efficiency assuming ideal class-B PA blocks.

further enhance average efficiency, additional voltage levels can be employed [26]. This

can lead to improved Adjacent Channel Leakage power Ratio (ACLR) figures too [27].

26

Page 43: Outphasing RF Power Ampli ers for Mobile Communication

3.4 Variants with a Nonisolating Combiner

3.3.3 Modified Multilevel Variants

Some further variants have been proposed [28, 29, 30] showing simultaneously some im-

provements in efficiency and linearity from the outphasing with Wilkinson combiner im-

plementation but some limitations when it comes to average efficiency compared to other

PA architectures.

3.4 Variants with a Nonisolating Combiner

3.4.1 Adaptive Compensation with Active Elements

In this implementation, the compensation elements jX and jX (Fig. 2.5) are realized

with varactors for instance [31] rather than with passive structures or components. With

the ability to tune the varactors through a control voltage, a dynamic compensation

can be achieved for a range of θc values (2.55) with the motivation to boost efficiency

instantaneously. Although good results can be achieved statically (50 % efficiency at 9 dB

PBO [31]), no dynamic (real-time) realization have been presented. Furthermore the

current varactor technology constitutes an obstacle for realizations supporting the high

power levels in BTS applications [32].

3.4.2 Input Amplitude Modulated Outphasing (IAMO)

This technique does not involve any change in the hardware concept of the original Chireix

idea, rather the SCS algorithm is exploited in a different manner: besides being outphased,

the split signals are allowed to take on several amplitude levels in accordance with achiev-

ing the highest efficiency at each desired output [33, 34].

30 32 34 36 38 40 42 44 46 48 500

10

20

30

40

50

60

70

Pout (dBm)

PA

E (

%)

(a) (b)

Figure 3.10: LS simulations showing (a) PAE curves that correspond to different input

power levels while having θ swept for each and (b) emerging loci sets.

27

Page 44: Outphasing RF Power Ampli ers for Mobile Communication

3 Emerging Outphasing Variants Study

With no 2nd harmonic isolation at the output side, simulations using large-signal (LS)

models showed that in principle it is possible to reconstruct the PAE curve of the original

Chireix concept [34]. This is depicted in Fig. 3.10. The concept is hence awaiting further

investigations and hardware realizations3.

3.5 Average Efficiency Calculations

Traditionally in analog wireless systems, the power amplifier’s efficiency at maximum

output power was used as a defacto efficiency figure-of-merit [35]. With the emergence

of complex modulation schemes with considerable PARs, the focus was shifted toward

the efficiency figure at a PBO that corresponds to the PAR in question. While this has

lead to a more realistic figure-of-merit, restricting the assessment to this quantity does not

properly reflect the system’s capabilities [35, 36]. Taking the signal’s PDF of the intended

communication scheme into account allows to calculate the overall average efficiency. In

this work, the W-CDMA signal with a PAR of 7.5 dB is selected as a reference signal in

establishing a comparison between the different architectures. It has been shown that a

W-CDMA signal is characterized by a Rayleigh distributed envelope [25]. The PDF and

CDF are respectively given by

ppVLq VL

σ2 e

V 2L

2σ2

P pVLq 1 eV 2L

2σ2

where σ is the signal’s statistical mode. A typical example is shown in Fig. 3.11. With

−4 −2 0 2 4−4

−3

−2

−1

0

1

2

3

4

Baseband I (V)

Bas

eban

d Q

(V

)

(a)

0.5 1 1.5 2 2.5 3 3.50

200

400

600

800

1000

1200

BasebandOVoltageOMagnitudeOyVh

Num

berO

ofOO

ccur

ence

s

RealOW-CDMAODataRayleighOAnalyticalOFit

(b)

Figure 3.11: A 7.5 dB PAR W-CDMA (a) IQ constellation and (b) distribution.

that in mind, this enables a theoretical upper limit efficiency assessment for a given

3An interpretation of the observed behavior is presented in light of Chapter 4.

28

Page 45: Outphasing RF Power Ampli ers for Mobile Communication

3.6 Outphasing Paradox

outphasing PA variant prior to its hardware realization. Assuming ideal class-B cores,

the obtained results for the discussed outphasing variants are summarized in Table 3.1.

Table 3.1: Outphasing variants comparison with a 7.5 dB PAR W-CDMA signal.

Variant Load Modulation Theoretical max ηavg

Wilkinson-LINC no 17.70 %

Turbo-LINC no 27.83 %

2L-AMO* no 38.37 %

Chireix* yes 59.25 %

Adaptive-Outphasing yes 78.54 %

IAMO* yes 59.25 %

*Design parameters tailored for the intended signal.

3.6 Outphasing Paradox

Arguably, the emergence of these variants can be traced back to the unsuccessful at-

tempts in reproducing the very promising efficiency performance of the original Chireix

(Fig. 2.10) in practice. It has been observed in [13] that both simulations and experimen-

tal results appear to significantly miss the idealized analysis. One factor can be linked

to the ambiguity in assimilating the concept: while it is true for realizations using an

isolating combiner that operating the PAs in high efficiency mode comes at the cost of

efficiency reduction due to the automatic implication of a lossy combiner (e.g. Wilkinson

or branchline), stating that the PAs would draw a constant amount of DC power as well

when using the Chireix combiner due to the driving signals’ constant envelope [37] is

inadequate. This paradox can be resolved by noting that the DC current is actually a

function of the Chireix load modulation as given by (2.50). As θ increases (low output

power direction), the DC current (2.50) and power (2.51) decrease resulting in the effi-

ciency curve shown in the previous Chapter. In fact it was not until very recently that

a breakthrough in the realization of the original Chireix PA at simultaneously VHF and

moderate power levels has occurred [38, 39, 40]. Next, some practical aspects playing a

crucial role toward the physical realization of a Chireix PA are considered.

29

Page 46: Outphasing RF Power Ampli ers for Mobile Communication

30

Page 47: Outphasing RF Power Ampli ers for Mobile Communication

Chapter 4

Practical Considerations for Chireix PA

Design

“It has to be said that Chireix’s original analysis is difficult to follow, and appears to

have left behind a legacy of misunderstanding and misconception in the industry as to

exactly what the technique has to offer.”

— Steve Cripps, RF Power Amplifiers for Wireless Communications

The original Chireix analysis was focused at vacuum tube PAs (Fig. 4.1) as the working

horses for amplifying the two outphased signals [8]. Applying the exact original approach

in designing a Chireix PA for modern telecommunication systems using state-of-the-art

solid-state technology, without any customization, would result in probable misses.

Glass tube

Anode

Heater

Heatedcathode

Grid

Figure 4.1: Voltage applied to the grid controls plate (anode) current [41].

This Chapter deals with the considerations required for the design of a Chireix PA dedi-

cated for BTS applications. First, the employed transistor technology is briefly presented.

A discussion on the power capability of the Chireix architecture is reported thereafter,

followed by a refined more realistic Chireix analysis accounting for some nonidealities.

The Chapter proceeds with bandwidth considerations. The Chapter’s outcomes form the

basis for a practical realization of a Chireix PA.

31

Page 48: Outphasing RF Power Ampli ers for Mobile Communication

4 Practical Considerations for Chireix PA Design

4.1 Technology

Together with advanced PA architectures, employing state-of-the-art transistor technol-

ogy are key items for an improved PA performance. GaN devices have been commercially

available for more than a decade, but their employment in high power PA telecommuni-

cation modules is just starting to lift-off. Some of the GaN key properties along with two

other competing PA device materials are summarized in Table 4.1 where the Johnson’s

Table 4.1: Material properties comparison [42, 43].

Si GaAs GaN Unit

Band Gap Energy, Eg 1.1 1.4 3.4 eV

Breakdown Electric Field, Eb 0.3 0.4 3.0 MVcm

Mobility, µ 1300 6000 1500 cm2VsSaturated Velocity, vsat 1.0 107 1.3 107 2.7 107 cmsThermal Conductivity, K 1.5 0.5 1.5 WcmKMaximum Temperature, Tmax 300 300 700 C

Relative Permittivity, εr 11.9 12.5 9.5 -

JFM (normalized to Si’s) 1 1.7 27 -

BFM (normalized to Si’s) 1 10 27.2 -

and Baliga’s figure-of-merit (JFM [44] and BFM [45]) are respectively derived from

JFM Eb vsat

2π(4.1a)

BFM ε µ E3g (4.1b)

The high breakdown field of GaN HEMTs allows operation at high drain voltages. This

leads to two main contributions concerning PA performance: first, in order to deliver the

same power level when compared with other technologies, a higher drain voltage means a

lower internal current and therefore less internal losses. Second, the higher drain voltage

translates for the same power level into a higher output impedance level, resulting in

lower loss matching circuits [42] due to the enhanced proximity to 50 Ω. On the other

hand a smaller dielectric constant results in smaller capacitances, leading in turn to higher

cutoff frequency. As the cutoff frequency relates to the gain-bandwidth product [46], the

result is the ability to support higher bandwidth. Furthermore, the higher saturated

velocity results in smaller charge densities for the same current. This means that the area

can be reduced [43] leading to further reduction in capacitances. The GaN advantages

constituted a motivation to select the GaN HEMT as the building block in this work.

The reported Chireix PA and other single track PAs are therefore all GaN based.

32

Page 49: Outphasing RF Power Ampli ers for Mobile Communication

4.2 Maximum Power Capability

4.2 Maximum Power Capability

Since not only efficiency but the figure watt(s) per currency unit is concerned too, it

is important to estimate the maximum achievable power of a Chireix PA using specific

transistor devices. The maximum power condition emanating from the delivered power

equation of a Chireix PA (2.52) is θ 0 . That equation suggests also that by making

ZL smaller, e.g. using an impedance transformer, the maximum obtainable power can be

enhanced accordingly. However that would be applicable to ideal sources only. In practice,

the maximum voltage Vmax and current Imax levels a given transistor can withstand do

limit its achievable maximum power, and therefore the architecture’s potential. To be

able to extract the maximum power from a single device1 at θ 0 as well, it is desired

to have:

|Y1,2p0q| Imax

Vmax

(4.2)

Evaluating (2.55) at θ 0 allows to write 1

ZL

jsinp2θcq

2ZL

Imax

Vmax

(4.3)

Consequently, the task translates into finding the optimum Chireix load ZL denoted Zopt

that maximizes the output power capability. This results in:

Zopt 1

2 Vmax

Imax

b

sin2p2θcq 4 (4.4)

The maximum achievable power can hence be found by reevaluating (2.52) at θ 0 for

ZL Zopt:

Pmax V 20

Zopt

(4.5)

Under full-swing operation, while the output bias DC voltage, VDC, is equal to V0, the

corresponding rail-to-rail voltage 2VDC should then be equating Vmax. The absolute max-

imum power that can be obtained from a Chireix PA employing two transistors with

breakdown limits Vmax and Imax can be estimated to be

Pmax 1

2 Vmax Imaxa

sin2p2θcq 4(4.6)

As can be seen, the impact of the technology is direct; while higher transistor’s maximum

ratings intuitively point out to a higher Chireix PA power ability, the design parameter

θc introduces too a traceable though much less heavier impact on the architecture’s capa-

bilities. A more detailed understanding can be gained by considering the classical class-B

1For more on loadline match and conjugate match, the reader is referred to [13].

33

Page 50: Outphasing RF Power Ampli ers for Mobile Communication

4 Practical Considerations for Chireix PA Design

PA abilities built using a single transistor. The Fourier analysis suggests the following

relation between Imax and the magnitude of the fundamental:rIfund

Imax

2(4.7)

The obtainable maximum power out of a single device (in an isolated class-B configura-

tion) is hence

Pimax V0?2

rIfund

?

2 1

8 Vmax Imax (4.8)

That is in principle what is reflected in load-pull (LP) measurements. By comparing this

to (4.6), it can be stated that the Chireix PA using two devices in class-B bias does not

exactly possess twice the power capability of a classical class-B PA built out of one of

these same devices. In fact, that’s only valid in the particular case when θc 0 , or in

other terms when the Chireix PA degenerates to the uncompensated Chireix case. The

following graph shows an exemplary Pmax curve for a class-B Chireix PA out of two GaN

devices marketed for the 30 W range with the following ratings at room temperature [47]:

Vmax 84 V and Imax 3 A. Regardless of the power application, the maximum power

0 5 10 15 20 25 30 35 40 4556

57

58

59

60

61

62

63

θc ()

Max

imum

Pow

er (

W)

−0.51

−0.43

−0.36

−0.28

−0.21

−0.14

−0.07

0

Pow

er D

egra

datio

n (d

B)

(a)

0 5 10 15 20 25 30 35 40 45−0.5

−0.4

−0.3

−0.2

−0.1

0

θc ()

Max

Pow

er D

egra

datio

n (d

B)

(b)

Figure 4.2: (a) 2 31.5 W Chireix’s maximum power capability vs. the design parameter

θc and (b) the generic defined degradation factor κ.

degradation factor κ can be defined as the ratio of a class-B Chireix’s maximum achievable

power to what would have been obtained from the same employed two devices, having

however each operated as a single class-B PA:

κ 10 log

Pmax

2Pimax

10 log

d4

sin2p2θcq 4

(4.9)

At its worst case, the “losses” attributed to κ remain below 0.5 dB (Fig. 4.2). Recalling

from (2.57) that θc is ideally the only parameter affecting the overall efficiency perfor-

mance, low values of κ means that the selection of θc is sustained. Furthermore extreme

34

Page 51: Outphasing RF Power Ampli ers for Mobile Communication

4.3 Transistor Model

selections of θc nearby 45 that result in the highest κs are not expected2.

Often, it is desired to keep in practice some margin away from the ratings, for instance

due to their temperature dependent nature. One option is therefore to slightly lower V0

while keeping VDC Vmax2. This measure is useful as well when it is desired to keep the

drain voltage above the transistor’s knee voltage Vk. In this case, Zopt is adjusted to

Zopt 1

2 VDC V0

Imax

b

sin2p2θcq 4 (4.10)

and Pmax becomes

Pmax 2V 20 Imax

VDC V0

1asin2p2θcq 4

(4.11)

where κ still holds3. Accordingly, a good balance in the selection of VDC and V0 should

be made to meet a certain desired power capability. It must be noted that the obtained

expressions are only approximations. Nevertheless it was found for instance that (4.4)

and (4.10) serve as a very good starting point in the design and optimization of a Chireix

PA combiner based on a more sophisticated ADS model4.

4.3 Transistor Model

Modeling of a GaN HEMT can get quiet complex. In fact [48] reports a 22-element small-

signal model accounting for the various parasitic elements of the device. This allows

to reflect the device physics over wide bias and frequency ranges. A scalable LS model

can be consequently constructed from the obtained multibias small-signal model [49, 50].

When it comes to circuit design, indeed the accuracy of such models play a vital role for

the success of the design. Furthermore, the load-modulation rich behavior of the Chireix

outphasing architecture (Fig. 2.8) necessitates an accurate and reliable transistor model,

as classical LP measurements at specific operation points do not constitute at all a suitable

design option. While indeed a complex model was employed in circuit simulations, this

Section presents a primitive model that paves the way for a realistic understanding of

the behavior of the Chireix PA when implemented using transistors rather than tubes.

Fig. 4.3 shows a simplified small-signal equivalent circuit model of a packaged HEMT

assuming a lossless package. The intrinsic model’s Π topology suggests the application of

Y-parameters [51] to characterize its electrical properties. Focusing for now only on the

intrinsic part of the packaged HEMT is partly justified by the possibility to compensate

2The compensation angles for the applicable examples studied in Section 3.5 did not surpass 20 .3Recall that the optimum load for a class-B PA becomes RB pVDC V0qpImaxq.4This is presented in the design Chapter, i.e. Chapter 5.

35

Page 52: Outphasing RF Power Ampli ers for Mobile Communication

4 Practical Considerations for Chireix PA Design

Figure 4.3: Packaged GaN HEMT simplified small-signal equivalent circuit model.

reactive parts of the package parasitics since the remaining resistive losses (corresponding

resistances not shown) are unavoidable in reality. This helps in reaching the sought-after

functional understanding of the Chireix PA operation using transistors. These parameters

are [52]:

y11 Ri C2

gs ω2

D jω

Cgs

D Cgd

(4.12a)

y12 jω Cgd (4.12b)

y21 gm ejωτ1 jRi Cgs ω jω Cgd (4.12c)

y22 gd jω pCds Cgdq (4.12d)

where D 1 R2i C2

gs ω2.

The equivalent Y-parameters representation is shown in Fig. 4.4 for both conduction and

pinch-off conditions (ON and OFF states), where the output capacitance is the equivalent

parallel combination of the drain-source and gate-drain capacitances:

Cout Cds Cgd (4.13)

(a) (b)

Figure 4.4: Y representation of the intrinsic HEMT in (a) ON and (b) OFF states.

36

Page 53: Outphasing RF Power Ampli ers for Mobile Communication

4.4 Practical Chireix Analysis

4.4 Practical Chireix Analysis

The original Chireix analysis encompassed some idealistic assumptions. To be able to

closely approach the very promising Chireix efficiency curve (Fig. 2.10) in reality, devia-

tions from ideal case that emerge upon the use of solid-state transistors should be carefully

considered, and whenever possible minimized. In parallel to the Chireix combiner design,

the major points to be considered in that quest are identified as:

Gate bias voltage: The gate bias should be set such that the transistor is ON

half the time, resulting in a drain current as much close as possible to a half-sine

waveform. Strongly deviating from this bias for instance by operation in class-AB

means a departure from the analysis that inherently assumed that, and expectedly

a direct hit to efficiency. On the other hand, operating in deep class-C means less

power capability.

Package parasitics compensation: Unpackaged transistors are not suitable for

high power BTS applications. In order to mimic the ideal Chireix combiner (Fig.

2.5), it is necessary to de-embed the undesired package parasitic elements of a pack-

aged transistor (Fig. 4.3) at least on the output side. It must be said that if

the transistor is internally prematched, the internal matching should equally be de-

embedded. In this regard, employing unmatched transistors is more convenient for

the design of a Chireix PA.

Harmonic shorted terminations: The presented analysis in Chapter 2 assumed

sinusoidal voltage waveforms at the Chireix combiner inputs. This can be ap-

proached by short-circuiting the harmonics. In fact, the inclusion of a 2nd harmonic

termination at the right reflection angle can account for around 20% increase in the

efficiency regardless whether the class is E, C or F [53]. Although about 10% can be

gained with a proper 3rd harmonic termination [53], the class-B current waveform’s

odd-overtones free content suggests that no short circuits are required for the odd

harmonics. This constitutes a significant leverage in the output network design.

Additional efficiency can theoretically be gained by properly terminating additional

higher order (even) harmonics. In practice, the complexity of the matching networks

becomes an issue especially that the obtained reward is minor. It must be noted

that the care required for harmonic terminations reenforces the choice of using un-

matched transistors. Otherwise an internal prematch transformation could hinder

the realization of the optimal harmonic terminations. In the design Chapter, it is

seen how the compensation of the package’s output parasitics and the 2nd harmonic

short are codesigned.

37

Page 54: Outphasing RF Power Ampli ers for Mobile Communication

4 Practical Considerations for Chireix PA Design

Output capacitance compensation: In contrast to package parasitics, the out-

put capacitance is a nonlinear component (Fig. 4.4). Under large RF drives, which

is the dominant regime when operating a Chireix PA, the intrinsic HEMT elements

become dependent on the extrinsic voltages and not uniquely on the bias conditions.

At the time the Chireix PA was invented, vacuum tubes (triodes, tetrodes...) were

the only choice for amplification as the transistor as a device did not appear until

more than a decade later. Since the interelectrode capacitances of a specific tube,

most significantly the grid to cathode capacitance, are basically solely dependent on

its geometrical characteristics [54], the compensation task required at HF was more

or less not complicated. Unlike that, the nonlinear nature of the output capacitance

of a GaN HEMT introduces a compensation milestone. The task of completely

resonating it out and getting closer in shape to the ideal topology (Fig. 2.5) is not

straightforward. One could think for instance of some form of dynamic matching

by introducing active elements in the output matching path. Unfortunately, this in

turn brings other complications5.

In light of that, the ideal Chireix analysis is refined in a basic manner, leading to a

better understanding of a transistor-implementation of the Chireix PA. Since the network

parameters [51] were developed for analyzing linear systems or nonlinear systems in their

linear regime operation, the obtained Y representations cannot be directly applied to

the analysis of the Chireix PA. The extrinsic voltage dependence of the intrinsic HEMT

elements under large RF drive become even exacerbated by operation in class-B. As the

transistor is continuously toggling between ON and OFF states, the concept of a single

equivalent circuit Y representation of it would collapse. An alternative option to couple

the transistor model into the Chireix architecture is to define harmonic admittances. In

fact, the complexity and unfamiliarity of a nonlinear time-variable impedance/admittance

is mitigated by applying the Fourier series analysis. This allows to restore a “fixed”

admittance albeit relating harmonic components of the output current and voltage. In

the following, an expression for the nonlinear capacitance Cout is developed.

4.4.1 Nonlinear Output Capacitance

The equation linking the current ic and voltage vc across a nonlinear Cout is given by

ic d

dtpCout vcq Cout dvc

dt vc dCout

dt(4.14)

where all of the entities ic, vc and Cout vary with time (the ptq is dropped for simplicity).

Two essential cases can be distinguished:

5Subsection 3.4.1 briefly described the use of active elements in the combiner.

38

Page 55: Outphasing RF Power Ampli ers for Mobile Communication

4.4 Practical Chireix Analysis

Chireix combiner with short circuits at the harmonics

This scenario represents the ideal class-B case being adapted to a transistor implementa-

tion of the Chireix PA. The higher order harmonic content of the current source cycles

through the short circuits, leaving no high order harmonic current content through Cout.

The drain voltage higher order harmonic content gets nullified as well. This results in the

capacitor voltage and current having the forms:

icptq A cospω0tBq (4.15a)

vcptq VDC V0 sinpω0t θq (4.15b)

With that, a solution to the differential equation (4.14) can now be pursued. The solution

can be found to be:

Coutptq Qres Asinpω0tBq

ω0

VDC V0 sinpω0t θq (4.16)

where Qres is a constant following from integration. The designation of this constant

by Qres stems from the form of the capacitance (4.16) where a voltage dimensioned de-

nominator implied a charge dimension for the numerator given in Coulomb. Indeed the

numerator is the indefinite integral of icptq (4.15a), representing a variable charge across

Cout. For Cout to retain a meaningful positive value, Qres has to be ¡ Aω0

. Although (4.16)

gives an adequate representation of the output capacitance in real time, it is of higher

interest to try to seek for it a frequency domain representation. The complete answer can

be found by applying the Fourier transform to (4.16):

Coutpfq F pCoutptqq (4.17)

Unfortunately, the raw solution for that, although might have a closed-form expression

[55], is extremely complex to handle. A simplified approach can hence be investigated

with the goal of determining what factors affect the fundamental frequency component

of Cout. The first simplification relies on the understanding that the output capacitance

decreases with increasing drain voltage, leading to a Qres " Aω0

. The second comes by

inspection that θ won’t be affecting the magnitudes in the frequency domain. These

together yield the following Cout simplification for further analysis:

Coutptq Qres

VDC V0 sinpω0tq (4.18)

Using the obtained expression, an illustrative example reflecting the parameters of a 30 W

GaN HEMT (Table 4.2) is shown in Fig. 4.5a. The corresponding more familiar form

of the output nonlinear capacitance as a function of the drain or capacitor voltage vc is

plotted in Fig. 4.5b. By noting that this function is periodic, the Fourier series ex-

39

Page 56: Outphasing RF Power Ampli ers for Mobile Communication

4 Practical Considerations for Chireix PA Design

Table 4.2: Parameters reflecting an exemplary 30 W GaN transistor.

f0 T0 Qres VDC V0

2140 MHz 0.4673 ns 4e-11 C 28 V 26 V

0 0.2 0.4 0.6 0.80

5

10

15

20

t (ns)

Cou

t(p

F)

T0

(a)

0 10 20 30 40 50 600

5

10

15

20

vc (V)Cout(pF)

(b)

Figure 4.5: Cout stemming from simplified circuit analysis for the harmonically shorted

case (a) as a function of time and (b) as a function of variable capacitor (or

drain) voltage for the parameters given in Table 4.2.

pansion can be applied, instead of the transform, to determine its fundamental frequency

component Fourier coefficients a1 and b1. Additionally a0 is determined. The derivation

is summarized in appendix C. It was found that

CoutpDCq QresaV 2

DC V 20Coutpf0q

2Qres

V0

VDCaV 2

DC V 20

1

(4.19a)

(4.19b)

To verify the validity of the obtained expressions, the numerical FFT algorithm is applied

to (4.18) in MATLAB. Both results are plotted as a function of the drain’s DC bias VDC

(Fig. 4.6a) and against the fundamental voltage magnitude V0 (Fig. 4.6b). The results

in Fig. 4.6b shall not be confused with the understanding of a decreasing Cout versus an

increasing drain voltage, since these point out to the DC and fundamental components of

the nonlinear output capacitance and not to Coutptq (Fig. 4.5).

Having reached that, it can be argued that the presented results are ungeneralized namely

due to the undertaken simplification Qres " Aω0

. To overcome this uncertainty, an alter-

native complementary path for inspecting the nonlinear output capacitance is presented.

Cout is extracted from the nonlinear LS model of Cree’s CGH27030F GaN HEMT [47] used

for the Chireix PA realization. The extraction is based on the method presented in [50].

The result is plotted in Fig. 4.7 as a function of the gate and drain bias voltages vgs and

40

Page 57: Outphasing RF Power Ampli ers for Mobile Communication

4.4 Practical Chireix Analysis

25 30 35 40 45 50 550

1

2

3

4

5

6

VDC (V)

|Cout|(pF)

DC − AnalyticalDC − FFTf0 − Analyticalf0 − FFT

(a)

14 16 18 20 22 24 26 280

1

2

3

4

5

6

7

V0 (V)

|Cout|(pF)

DC − AnalyticalDC − FFTf0 − Analyticalf0 − FFT

(b)

Figure 4.6: Parametric Cout’s DC and fundamental components for the simplified harmon-

ically shorted case (a) with respect to VDC and (b) with respect to V0 with the

fixed parameter values as given in Table 4.2.

vds. As can be seen, the output capacitance is also a strong function of the gate voltage.

−10−9−8−7−6−5−4−3−2−10

01020304050607080

0

10

20

30

vgs

(V)vds

(V)

Cou

t (pF

)

FittedExtracted

Figure 4.7: Extracted (dotted) and fitted (colored surface) CGH27030F’s Cout.

By comparison to (4.16), it can be speculated that the factor A could be exhibiting some

gate voltage dependency. Although the investigation of a simplified Cout can lead to some

useful results [56], taking into account the gate bias effect is recommended especially for

LS applications where for instance the Chireix PA transistors are biased in class-B and

operated in full-swing mode. With that in mind an empirical form of the extracted Cout

is pursued. The fitted expression taking into account the cross-coupling between vgs and

vds was based on the equation models presented in [57] with minor modifications:

Cout a 1 tanhpbvgs cv2gsq 1 tanhpdvgsvds evds fv2

dsq g ppFq (4.20)

The constants after fitting using MATLAB are summarized in Table 4.3. The surface fit

41

Page 58: Outphasing RF Power Ampli ers for Mobile Communication

4 Practical Considerations for Chireix PA Design

Table 4.3: Empirical Cout constants in (4.20) for the CGH27030F HEMT.

a b c d e f g

19.205 -0.4246 -0.2876 -0.1014 -0.1815 0.0610 2.0780

is plotted in Fig. 4.7. By applying harmonic inputs in (4.20),

vgsptq VGS Vgs sinpω0t θq (4.21a)

vdsptq VDS G Vgs sinpω0t π θq (4.21b)

where VDS and GVgs are respectively equivalent to the previously used VDC and V0 terms,

a modulated Cout is obtained. The resulting real-time Cout is plotted in Fig. 4.8a for

the intended design values given in Table 4.4 for different V0 settings (that correspond

to different drive levels). Its spectral components can be retrieved by applying the FFT

algorithm (Fig. 4.8b). The output capacitance values at DC, f0 and 2f0 are plotted in

0 0.2 0.4 0.6 0.80

5

10

15

20

25

t (ns)

Cout(pF)

(a)

0 2140 4280 6420 8560 107000

1

2

3

4

5

f (MHz)

|Cout(f)|(pF)

(b)

Figure 4.8: (a) Real time fitted Cout for different V0 values and (b) its spectral components.

Table 4.4: Design parameters using the CGH27030F HEMT.

f0 VGS VDC G

2140 MHz -3.8 V 38 V 10

Fig. 4.9 as a function of the parameter V0. It is noted that the higher order components of

Cout are nonzero. Nevertheless for the purpose of compensation in the Chireix combiner,

only the fundamental component of Cout is relevant.

Chireix combiner w/o a short circuit at the 2nd harmonic

In this case, a second order harmonic voltage Vds2 appears in vds:

vdsptq VDS G Vgs sinpω0t π θq Vds2 sinp2ω0t γq (4.22)

42

Page 59: Outphasing RF Power Ampli ers for Mobile Communication

4.4 Practical Chireix Analysis

28 29 30 31 32 33 34 35 360

0.51

1.52

2.53

3.54

4.55

V0 (V)

|Cout|(pF)

DCf02f0

Figure 4.9: Cout’s first three spectral components as a function of the parameter V0.

This makes the fundamental component of the nonlinear output capacitance significantly

dependent on it (Fig. 4.10).

0 1 2 3 4 5 6 7 8 9 100

0.5

1

1.5

2

2.5

3

3.5

Vds2 (V)

|Cout(f0)|(pF)

Figure 4.10: Cout’s fundamental component for the nonharmonic design case.

4.4.2 Implications on Chireix PA Design

The previous analysis points out that the nonlinear output capacitance component at f0

is not only dependent on the DC bias settings, but also on the magnitudes of the har-

monic voltages. The analysis suggests that the output capacitance at the fundamental

can uniquely be constant if the voltage magnitudes of the harmonics are constants too. At

the fundamental, a constant input drive level and a low drain-to-source resistance helps

stabilizing the fundamental voltage magnitude at the output. For the latter, GaN is a

43

Page 60: Outphasing RF Power Ampli ers for Mobile Communication

4 Practical Considerations for Chireix PA Design

suitable choice [42]. As the transistor’s nonlinear behavior in class-B will result in the

generation of even only overtones, a constant and hence “compensatable”Coutpf0q

can

be guaranteed by shorting at least the 2nd harmonic in the combiner so that Vds2 0 for all

outphasing θ angles. Otherwise leaving it unshorted would result in a floating Vds2 as the

outphasing angle varies. Furthermore, the output capacitance value to be compensated

is not the one obtained from small-signal analysis: while Coutp3.8 V, 38 Vq 2.17 pF

(Fig. 4.7),Coutpf0q

hints to a higher value depending on the selected outphasing LS

drive level magnitude (Fig. 4.9). It can be noticed that as V0 decreases, i.e. approach-

ing small-signal operation, the converging to 2.17 pF DC component will prevail (Fig. 4.9).

On the other hand, it has been observed using GaN HEMTs from SEDI [58] that leaving

out the 2nd harmonic termination together with modulating the input drive level allows to

reconstruct the original Chireix PAE curve [33, 34]. In light of the discussed understanding

of Cout, this behavior can be interpreted by the following mechanism: asCoutpf0q

becomes

a variable of the harmonics too, changing the input drive level will result in a compensatedCoutpf0q albeit occurring each time at a different outphasing angle θ. If that happens to

coincide with the transistor characteristics, the compensation points will form a continuity

allowing in principle to digitally recapture the original Chireix PAE curve by selecting

the proper drive levels and outphasing angles sets (Fig. 4.11). Furthermore, a remarkable

correlation when it comes to the ideal Chireix peaks distance and simulated IAMO ones

is noticed (Fig. 4.11 and Table 4.5). It must be said that the implementation of such a

variant requires the availability of solid LS models that enable describing the transistor

characteristics in vast areas of load impedances and voltages.

30 32 34 36 38 40 42 44 46 48 500

10

20

30

40

50

60

70

Pout (dBm)

PA

E (

%)

(a)

30 32 34 36 38 40 42 44 46 48 500

10

20

30

40

50

60

70

Pout (dBm)

PA

E (

%)

(b)

Figure 4.11: IAMO PAE LS simulations with (a) θc 15 and (b) θc 30 designs.

44

Page 61: Outphasing RF Power Ampli ers for Mobile Communication

4.4 Practical Chireix Analysis

Table 4.5: Peaks distances comparison for two different designs.

Peaks distance comparison θc 15 θc 30

Chireix theoretical (2.58) 11.4 dB 4.8 dB

LS IAMO simulations 10.8 dB 4.1 dB

4.4.3 Load Modulation

So far, it has been discussed that a main difference with the original analysis is the

presence of the output capacitance. In order to move one step closer to a transistor-

based implementation, the Chireix topology is slightly modified to include the output

conductance and capacitance of each transistor. As can be noted from (2.55a) and (2.55b),

the expression of Yi does not depend on V0. Under the assumption that the voltage is

sinusoidal, accounting for the output conductance and capacitance by adding them in

parallel can be safely made. This allows to obtain the new admittance expressions instead

of rederiving them. Assuming an unpackaged transistor for now, the block to be inserted

between the ideal current sources and the Chireix combiner is shown in Fig 4.12a.

(a)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.2

1.4

1.6

1.8

2.0

3.0

4.0

5.0

10 20

20

-20

10

-10

5.0

-5.0

4.0

-4.0

3.0

-3.0

2.0

-2.0

1.8

-1.8

1.6

-1.6

1.4

-1.4

1.2

-1.2

1.0

-1.0

0.9-0

.9

0.8-0

.8

0.7-0

.7

0.6-0

.6

0.5-0

.5

0.4

-0.4

0.3

-0.3

0.2

-0.2

0.1

-0.1

Theta (0.000 to 89.000)

Gam

ma

1G

amm

a2

(b)

Figure 4.12: (a) Blocks inserted between the Chireix ideal current sources and Chireix

combiner and (b) transformed loci at die’s plane.

In order to mimic the original Chireix combiner as much as possible, it is then required to

compensate for each of the output capacitances with a parallel inductance inserted in the

combiner such that its admittance is equal to jωCoutpf0q

. With that, the admittances

45

Page 62: Outphasing RF Power Ampli ers for Mobile Communication

4 Practical Considerations for Chireix PA Design

seen by the transistors can be written as

YTR1 1 cosp2θq2ZL

jsinp2θq

2ZL

jsinp2θcq

2ZL

jωCoutpf0q

(4.23a)

YTR2 1 cosp2θq2ZL

jsinp2θq

2ZL

jsinp2θcq

2ZL

jωCoutpf0q

(4.23b)

This implies some transformation of the Chireix loci on the Smith-chart from the location

seen in Fig. 2.7 to the one depicted in Fig 4.12b.

4.5 Bandwidth Considerations

As the outphasing concept relies on encoding the amplitude modulation into additional

phase modulation, some bandwidth expansion is expected after the SCS. This is man-

ifested by the arccos function, that is ideally used to generate the outphasing angle θ

(2.3), taking the amplitude of the original signal as its independent variable. Indeed,

calculations show how the spectrum of a W-CDMA 5 MHz-wide input signal considerably

expands after splitting it into two outphasing signals (Fig. 4.13a). This was confirmed

by measurements6 as seen in Fig. 4.13b. The obtained outcome has been reenforced by

inspecting the spectrum of a 2-Carrier W-CDMA 20 MHz-wide signal (Fig. 4.14).

In order to study the impact of the bandwidth expansion on the system requirements, the

instantaneous frequency [59, 60] of the individual outphasing signals is first considered.

−60 −40 −20 0 20 40 60−60−55−50−45−40−35−30−25−20−15−10−5

0

f (MHz)

PS

D (

dB/9

.4kH

z)

S

in

S1

S2

(a)

2060 2080 2100 2120 2140 2160 2180−60−55−50−45−40−35−30−25−20−15−10−5

0

(MHz)

(dB

)

S

1

S2

(b)

Figure 4.13: (a) Calculated and (b) measured (normalized) bandwidth expansion of the

individual outphased signals from a 5 MHz W-CDMA signal.

6The SCS setup is described in Chapter 6.

46

Page 63: Outphasing RF Power Ampli ers for Mobile Communication

4.5 Bandwidth Considerations

−60 −40 −20 0 20 40 60−50−45−40−35−30−25−20−15−10−5

0

f (MHz)

PS

D (

dB/9

.4kH

z)

S

in

S1

S2

(a)

2060 2080 2100 2120 2140 2160 2180−50−45−40−35−30−25−20−15−10−5

0

(MHz)

(dB

)

(b)

Figure 4.14: (a) Calculated and (b) measured (normalized) bandwidth expansion of the

individual outphased signals from a 20 MHz W-CDMA signal.

4.5.1 Instantaneous Frequency

From the expressions in (2.5), the instantaneous frequencies of the outphased signals can

be written as

f1 f0 1

2π d

dtpφptq θptqq (4.24a)

f2 f0 1

2π d

dtpφptq θptqq (4.24b)

With that, these quantities can be (numerically) calculated for any communication scheme.

Applying this to three different 7.5 dB PAR W-CDMA signal configurations with the re-

spective original bandwidths (BWs) of 5 MHz, 10 MHz and 20 MHz hints that the indi-

vidual outphasing signals will expand significantly in BW each. Fig. 4.15a shows that for

the 5 MHz case. By inspection, it is seen that the bandwidth occupied by the instanta-

−400 −300 −200 −100 0 100 200 300 400Instantaneous Frequency Shift (MHz)

Num

ber

of O

ccur

ence

s

(a)

−15 −10 −5 0 5 10 15Instantaneous Frequency Shift (MHz)

Num

ber

of O

ccur

ence

s

(b)

Figure 4.15: (a) Instantaneous frequency shift for the individual outphased signals from

a 5 MHz W-CDMA signal and (b) its zoomed view.

47

Page 64: Outphasing RF Power Ampli ers for Mobile Communication

4 Practical Considerations for Chireix PA Design

neous frequency is equal to the sampling frequency of the baseband input signal, which

amounted in this case to 307.2 MHz. Given that the broadband matching of any load

impedance is subject to limitations emanating from the bounded value of the integral in

[61],8»0

ln1

|Γpωq|dω (4.25)

the expansion would translate into a challenging matching problem7. As a consequence,

designing the PA cores to cope with the considerable full bandwidth expansion due to

outphasing is extremely hard at a center frequency of 2.14 GHz, if not impossible. Taking

however a zoomed look at the instantaneous frequency plot (Fig. 4.15b), it can be noted

that the bell shaped distribution falls mostly in a much narrower range than the fully

expanded one. For the given three signal configurations, the percentage of outphased

data contained in a presumably limited frequency range supported by the PA cores is

calculated and depicted in Fig. 4.16. It can be seen that 95 % or more of the outphased

data in terms of instantaneous frequency occurrences is contained in respectively about

7 MHz, 20 MHz and 60 MHz BW of the outphased signals. Subsequently, the impact of

having a restricted BW support from the PA cores can be studied.

100

101

102

103

75

80

85

90

95

100

PAISupportingIBWI(MHz)

Pre

serv

edIIn

foI(

D)

05MHzIW-CDMA10MHzIW-CDMA20MHzIW-CDMA

Figure 4.16: Preserved outphased data as a function of the PA cores’ supported BW.

4.5.2 Modulation Accuracy

While the instantaneous frequency gives a statistical idea reflecting the percentage of

outphased data in a given BW in terms of frequency occurrences, a more discrete and

standardized metric to consider would be the error vector magnitude (EVM). The EVM

is employed in many communication standards as a figure-of-merit of the transmitter’s

7The reflection factor can be minimized to a certain limit in a given frequency band.

48

Page 65: Outphasing RF Power Ampli ers for Mobile Communication

4.5 Bandwidth Considerations

modulation accuracy [62, 63, 64, 65], i.e. the fidelity in transmitting a given signal. The

EVM can be computed using

EVMrms

gffe°Nk1

pIk rIkq2 pQk rQkq2

°N

k1pI2k rQ2

kq 100 (4.26)

where

Ik is the in-phase component of the kth symbol in the reference signal,

Qk is the quadrature phase component of the kth symbol in the reference signal,rIk is the in-phase component of the kth symbol in the tested/transmitted signal,rQk is the quadrature phase component of the kth symbol in the tested/transmitted signal,

N is the vector length of the reference signal [66].

To check how the EVM gets affected upon BW truncation of the outphased signals, the

Gedankenexperiment represented by Fig. 4.17 is performed: an ideal bandpass filter with

adjustable BW is equally applied to each of the outphased signals. At different desired

checkpoints along the flow of the signals, “EVM-meters” are placed as seen in Fig. 4.17.

Two “PAR-meters” are introduced as well. An illustration of a truncated outphased sig-

nal in frequency domain that corresponds to the 2-Carrier W-CDMA 20 MHz-wide signal

configuration is depicted in Fig. 4.188. By adjusting the bandpass width, the virtual

SCS

(BB I and Q)

EVM

EVM

PAR

PAR

s1

EVM

BW

BWs2

s1Filtered

s2Filtered

ssL

Figure 4.17: Outphased signals BW truncation virtual test setup.

setup allows to evaluate these metrics as a function of the Chireix PA supporting BW.

EVM at the checkpoint s1Filtered (with reference to s1) is plotted in Fig. 4.19. Applying the

95% rule (EVM1 5%) leads to the minimum required BWs of approximately 32 MHz,

75 MHz and 187 MHz for the respective signals, which is significantly more demanding

than what was estimated using the instantaneous frequency metric in the previous sub-

section. Comparing these to the original BWs of 5 MHz, 10 MHz and 20 MHz, it is found

that the expansion factor varies between 6.4 and and 9.4 accordingly.

8Due to the similar properties of the two outphased signals, path 1 is only illustrated.

49

Page 66: Outphasing RF Power Ampli ers for Mobile Communication

4 Practical Considerations for Chireix PA Design

−150−125−100 −75 −50 −25 0 25 50 75 100 125 150−100

−90−80−70−60−50−40−30−20−10

0

f (MHz)

PS

D (

dB/9

.4kH

z)

S

1

S1Filtered

(a)

−150−125−100 −75 −50 −25 0 25 50 75 100 125 150−100

−90−80−70−60−50−40−30−20−10

0

f (MHz)

PS

D (

dB/9

.4kH

z)

S

1

S1Filtered

(b)

Figure 4.18: Example of the outphasing signal corresponding to a 20 MHz 2-Carrier W-

CDMA input, truncated in MATLAB to (a) 15 MHz and (b) 100 MHz.

0 50 100 150 200 250 300 3500

102030405060708090

100

PA Supporting BW (MHz)

EV

M1 (

%)

05MHz W−CDMA10MHz W−CDMA20MHz W−CDMA

Figure 4.19: EVM of s1Filtered with reference to s1 as a function of the bandpass filter’s

BW for three W-CDMA input signal configurations.

0 50 100 150 200 250 300 3500

102030405060708090

100

PA Supporting BW (MHz)

EV

M (

%)

05MHz W−CDMA10MHz W−CDMA20MHz W−CDMA

(a)

0 5 10 15 20 25 30 35 40 45 500

1

2

3

4

5x 10

−3

PA Supporting BW (MHz)

EV

M (

%)

05MHz W−CDMA10MHz W−CDMA20MHz W−CDMA

(b)

Figure 4.20: (a) EVM of sL with reference to s as a function of the bandpass filter’s BW

for three W-CDMA input signal configurations and (b) its zoomed view.

That’s considerable, however is it necessary and required for the PA cores to fully support

50

Page 67: Outphasing RF Power Ampli ers for Mobile Communication

4.5 Bandwidth Considerations

this for a reliable transmission? To answer that, the EVM at the antenna port, i.e. sL

relative to s, is examined as a function of the afforded BW and plotted in Fig. 4.20. It

can be seen that the transmitted signal almost fully retains the content of the original

signal starting from minimal BW support of 5 MHz, 10 MHz and 20 MHz respectively as

indicated by the EVM values. To understand why, equation 2.5 is inspected. In fact, the

outphased signals can be rewritten as

s1ptq r0 rsinpωt φptqq cospθptqq cospωt φptqq sinpθptqqs (4.27a)

s1ptq r0 rsinpωt φptqq cospθptqq cospωt φptqq sinpθptqqs (4.27b)

Recalling that θptq arccosrptq2r0

leads to the following form

s1ptq sptq2

sexpptq

s1ptq sptq2

sexpptq

(4.28a)

(4.28b)

where

sexpptq r0 cospωt φptqq sinpθptqq (4.29)

This confirms the obtained finding from the EVM computations since the original signal

is already “buried” in s1ptq and in s2ptq: provided the minimal filtering BWs of 5 MHz,

10 MHz and 20 MHz in the considered examples are not violated, and that the filters are

identically applied9, the summation s1ptq s2ptq will result in sptq again no matter what

the bandpass BW is. Does that imply that filtering is the next step? In fact, the role of

sexpptq serves to obtain constant amplitudes s1,2ptq, which is the motivation for achieving

high efficiency in the Chireix architecture. Having known that truncating the outphasing

signals in frequency domain does not harm the Chireix transmitter’s modulation accuracy,

the answer to what extent does it harm the constant amplitude requirement (and subse-

quently power efficiency) can be probed by inspecting the PARs of the outphased signals.

The setup in Fig. 4.17 accounts for that. The PAR of s1Filtered is plotted against the

afforded BW in Fig. 4.21. It can be interestingly observed that BW supports of 27 MHz,

60 MHz and 118 MHz will have about the same effects on PAR as 206 MHz, 206 MHz and

220 MHz for the respective signals! Fully constant amplitude outphasing signals will re-

quire however the “extra-miles” of reaching the sampling frequency of 307.2 MHz in terms

of BW support.

9Any unbalance in the filtering could leave measurable effects on the degradation of the transmitted

signal’s EVM.

51

Page 68: Outphasing RF Power Ampli ers for Mobile Communication

4 Practical Considerations for Chireix PA Design

0 50 100 150 200 250 300 3500

2

4

6

8

10

12

14

16

PA Supporting BW (MHz)

PA

R1 (

dB)

05MHz W−CDMA10MHz W−CDMA20MHz W−CDMA

Figure 4.21: The PAR for s1Filtered as a function of the bandpass filter BW.

4.5.3 Summary

The BW support requirements for the Chireix PA cores has been investigated. It turns

out that a (nonlinear) compromise emerges between how much BW support to dismiss and

how much low PAR to retain. Saying for instance that the outphasing architecture can still

live some high efficiency expectations with a 2 dB PAR for the outphased signals (instead

of an ideal 0 dB PAR) implies about 20 MHz, 42 MHz and 94 MHz required support from

the PA cores in terms of BW, something which is affordable around 2.14 GHz. Despite

that, it is still suggested that the PAs should preferably offer some wideband performance,

especially in the worst case scenario where two or more multicarriers are simultaneously

placed on the two extreme sides of the transmit band. In such circumstances, class-J cores

[67] could emerge as a good option for the Chireix PA in the future. Nevertheless this

would present a double challenge, first being the “classical” class-J challenge to realize

the dispersive harmonic terminations over the desired frequency band and second being

the ability to preserve these terminations as the outphasing angle is varied or equivalently

the load is being modulated. An insight about the difficulty of the latter point can be

gained by noting that in a class-B implementation, a harmonic trap offers a way to shield

the desired 2nd harmonic termination from the rest of the combiner circuit, albeit strictly

speaking at a single frequency point. As it is observed in the next Chapter, for a narrow

band regime, the area behind the trap can be effectively designed to get the 2nd harmonic

termination’s reflection factor into a desired small “spot” on the Smith-chart when referred

to the package plane. In its simplest form, a trap can be implemented using a quarter-

wave open-circuit stub. When it comes to a class-J implementation, it becomes evident

then that novel trapping structures might be required to provide a reasonable shielding

52

Page 69: Outphasing RF Power Ampli ers for Mobile Communication

4.6 Conclusion

for a segment of 2nd harmonics instead of a single frequency point, where the area behind

such structures should still be exploited to tackle the first of the two challenges.

4.6 Conclusion

In this Chapter, several practical aspects crucial for the understanding and design of a

modern Chireix PA were considered. An expression for a load maximizing the power

capability in accordance with the selected transistors’ voltage and current ratings was

obtained. It was argued that the inclusion of shielded harmonic terminations in the

combiner constitutes a condition for proper Chireix outphasing operation. Subsequently,

the location where to expect the impedance loci on the Smith-chart upon compensating

the nonlinear output capacitance was anticipated. Besides that, it has been reasoned that

the Chireix concept can actually sustain some limited BW support from the PA blocks.

Based on the aforementioned outcomes, the next Chapter presents a Chireix PA design

method, including verification using LS models, culminating in a 60 W Chireix PA design.

53

Page 70: Outphasing RF Power Ampli ers for Mobile Communication

54

Page 71: Outphasing RF Power Ampli ers for Mobile Communication

Chapter 5

Chireix PA Design

“Unfortunately, both simulation and experimental results appear to fall well short of

the idealized analysis.”

— Steve Cripps, RF Power Amplifiers for Wireless Communications

To test the outcomes and implications discussed in the previous Chapters, two class-B

Chireix PA design cases using Cree’s CGH27030F 30 W GaN HEMTs [47] following both

the same design technique with the only difference being the absence or presence of 2nd

harmonic terminations in the Chireix combiner are simulated and compared. The Chapter

concludes with a 60 W Chireix PA design.

5.1 Design Methodology

The developed design technique is summarized in the following steps:

1. Select convenient bias voltages.

2. Design the input and output bias network (Fig. 5.1).

3. Carry out source-pull & initial load-pull simulations.

4. Design input matching accounting for stability.

5. Carry out load-pull 2nd harmonic simulation.

6. Design 2nd harmonic termination structure (Fig. 5.1).

7. Realize the Chireix combiner as equation blocks (Fig. 5.1).

8. Test outphasing operation and optimize combiner elements.

9. Calculate its 3-port S-parameter.

10. Realize the 3-port in TL then in Momentum environments.

55

Page 72: Outphasing RF Power Ampli ers for Mobile Communication

5 Chireix PA Design

where steps 5 and 6 are skipped in the nonharmonic combiner case. Step 7 expands into:

1. Calculate the 2-port compensation block of the overall package and 2nd harmonic

termination structure. The Y-matrix of this compensation block is obtainable from

the inverse of the T-matrix of the overall structure to be compensated (Fig. 5.1).

2. Estimate a value ofCoutpf0q

to be compensated for from Fig. 4.9.

3. Calculate the corresponding compensating inductance Lcomp 1

ω20|Coutpf0q| .

4. Calculate the Chireix jX compensation elements as in (2.54).

5. Select an initial ZL value (Fig. 2.5). Design a convenient transformer to get it to

50 Ω later on.

6. Place the described blocks as shown in Fig. 5.1 with the quarter-wave TL trans-

formers having an impedance Z0 ?

2ZL.

7. Similarly form path 2 except with a sign for the Chireix element, and join the

paths with ZL.

Figure 5.1: Path 1 of the practical Chireix combiner for the harmonic case.

The procedure can be iterated at several frequency points to avoid a narrow-band design.

5.2 Simulation Results

Fig. 5.2 and 5.3 show the simulated impedance loci referred to the package plane that each

transistor experiences while the outphasing angle θ is swept, for respectively a Chireix

56

Page 73: Outphasing RF Power Ampli ers for Mobile Communication

5.2 Simulation Results

PA without and with 2nd harmonic terminations in the combiner.

Figure 5.2: Package plane impedance loci on the Smith-chart at the fundamental (left)

and 2nd harmonic (right renormalized to 5 Ω) for a nonharmonic Chireix

combiner with θc 15 as a function of θ. The index i in Gammai corresponds

to the device index, 1 being the device with the leading outphased signal.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.2

1.4

1.6

1.8

2.0

3.0

4.0

5.0

10 20

20

-20

10

-10

5.0

-5.0

4.0

-4.0

3.0

-3.0

2.0

-2.0

1.8-1.

8

1.6

-1.6

1.4

-1.4

1.2

-1.2

1.0

-1.0

0.9

-0.9

0.8

-0.8

0.7

-0.7

0.6

-0.6

0.5

-0.5

0.4-0.

4

0.3

-0.3

0.2

-0.2

0.1

-0.1

Theta (5.000 to 105.000)

Ga

mm

a1

Ga

mm

a2

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.2

1.4

1.6

1.8

2.0

3.0

4.0

5.0

10 20

20

-20

10

-10

5.0

-5.0

4.0

-4.0

3.0

-3.0

2.0-2

.0

1.8

-1.8

1.6

-1.6

1.4

-1.4

1.2

-1.2

1.0

-1.0

0.9

-0.9

0.8

-0.8

0.7

-0.7

0.6

-0.6

0.5-0

.5

0.4

-0.4

0.3

-0.3

0.2

-0.2

0.1

-0.1

Theta (5.000 to 105.000)

Ga

mm

a1

_2

f0G

am

ma

2_

2f0

Figure 5.3: Package plane impedance loci on the Smith-chart at the fundamental (left)

and 2nd harmonic (right) for a harmonic Chireix combiner with θc 15 as

a function of θ. The index i in Gammai corresponds to the device index, 1

being the device with the leading outphased signal.

57

Page 74: Outphasing RF Power Ampli ers for Mobile Communication

5 Chireix PA Design

30 32 34 36 38 40 42 44 46 480

10

20

30

40

50

60

70

80

Pout (dBm)

PA

E (

%)

Combiner w/o 2nd Harmonic

Combiner w 2nd Harmonic

(a)

5 15 25 35 45 55 65 75 85 95 1050

2

4

6

8

10

12

14

16

θ ()

Vds2

(V)

Combiner w/o 2nd Harmonic

Combiner w 2nd Harmonic

(b)

Figure 5.4: (a) Simulated Chireix PA PAE and (b) 2nd harmonic drain voltage magnitude

using LS models (θc 15 ).

The similarity between the simulated loci at the fundamental1 and the idealized Chireix

loci after taking into account Cout compensation (Fig. 4.12) can be observed. The opti-

mum compensating inductance was found to correspond toCoutpf0q

3.2 pF. Fig. 5.4a

shows the corresponding PAEs, confirming that it is not possible with a nonharmonic

configuration to get close in shape to the promised ideal Chireix PA curve (Fig. 2.10).

The two designs exhibit almost identical behaviors at the fundamental where the load is

modulated due to the outphasing action, but the difference in efficiency performance is

primitive. Although almost the exact same Pmax and PAEmax are achievable, the perfor-

mance in PBO is hugely different (Fig. 5.4a): while the 2nd harmonic terminations are

floating in the first case (Fig. 5.2), they are locked to a certain desired angle ( 100 for

the reflection factor referred to the package plane) in the second one (Fig. 5.3) despite

the load being modulated as θ is varying. This is done by using the area behind the

harmonic traps in each of the paths to realize the desired phase of the reflection factor

at the 2nd harmonic (Fig. 5.1). The simulated 2nd harmonic drain voltage is shown in

Fig. 5.4b for each of the cases.

It must be mentioned that losses due to dissipation in passive matching networks will

result in some PAE degradation upon realization. For a two port network, the losses [68]

are given by:

ς 1 |S11|2 |S12|2 (5.1)

As this quantity depends on the terminations, its use requires the correct values of the

transistor’s input impedance when applied at the input side for instance. In order to

get accurate results, cosimulation using ADS’s Momentum is employed. A comparison to

1For extreme outphasing angles, the loads might leave the unity circle of the Smith-chart. This behavior

can be linked to the nature of actively modulated PA architectures where the output impedance of a

transistor is actively seen by the other transistor, resulting in a slightly negative resistance.

58

Page 75: Outphasing RF Power Ampli ers for Mobile Communication

5.3 Realization

measurements is presented in the next Chapter.

5.3 Realization

The layout of the designed Chireix PA is depicted in Fig. 5.5. The design was originally

targeted to include a driver stage. Inquiry of the FPGA power capabilities led to dropping

the shown drivers’ circuitry for external ones with about 38 dB gain at 2140 MHz [69].

The PA’s hardware was realized on RO 4350B substrate [70] (Fig. 5.6).

Figure 5.5: Layout of the Chireix PA with harmonic combiner.

(a) (b)

Figure 5.6: (a) Driver stage circuitry built for separate testing and (b) realized Chireix

PA with harmonic combiner on a 15 12 cm2 board.

59

Page 76: Outphasing RF Power Ampli ers for Mobile Communication

5 Chireix PA Design

Instead of a realization with stub topology, the Chireix elements were implemented us-

ing two different length transmission lines [71]. The same applies for the capacitance

compensation element, Lcomp (Fig. 5.1), where the two inductors (one per path) were

merged into the TLs; As long as the agreement between the 3-port S-parameters of the

equation-based combiner and its TL-based counterpart (at DC, f0 and 2f0 at least) is

preserved, the realization topology can be freely set. On the other hand, the harmonic

traps were realized using radial stubs. This realization tends to offer more bandwidth

performance [72]. The mathematical symmetry of the Chireix combiner properties does

not reflect into a physical geometric symmetry, hence the board is not symmetrical about

its middle horizontal axis.

In the following, the built setup dedicated for characterizing and driving the Chireix PA

is described. Consequently, static and real-time measurement results are presented.

60

Page 77: Outphasing RF Power Ampli ers for Mobile Communication

Chapter 6

Characterization

Although direct measurements of the impedance loci at the drain terminals using probes

[73] could constitute an option for comparison purposes, in this work the assessment of

the earlier discussed outcomes are made mainly through efficiency and spectrum mea-

surements. In this Chapter, an overview of the built setup configurations and outphasing

measurement practices is presented. Static measurement results of the designed Chireix

PA are reported thereafter, followed by dynamic testing results.

6.1 Measurement Setup

6.1.1 Manual Configuration

As the preliminary measurements were concerned with concept assessment and develop-

ment, a basic setup was firstly built. In this initial configuration, the SCS block (2.1)

was exchanged for an RF signal generator feeding a driver PA whose output is followed

by a 3 dB symmetric power splitter and a manually adjustable phase shifter connected to

one of the available branches (PA2 in this case) after the splitter. Fig. 6.1 depicts the

corresponding setup. The phase shifter emulates outphasing operation by introducing a

phase delay that ultimately would have been encoded digitally if an SCS was employed.

The output of the PA under test is connected to an attenuator before reading the output

power with a power meter on one channel. The other channel was used for reading the

input power just before splitting. In order to avoid burning the transistors when mea-

suring the performance at considerable power levels, the setup was configured for pulsed

measurements using an external arbitrary waveform generator. The measurement routine

mainly consisted of recording the output power and corresponding DC current for each

manually adjusted phase delay. This allowed to fully characterize the instantaneous static

efficiency of the PA. Nevertheless, this came at a substantial time-cost. Considering that

several sweeps of frequency, power levels, gate voltages and drain voltages were necessary,

a rather automated setup looked much more convenient. In addition to that, the need

61

Page 78: Outphasing RF Power Ampli ers for Mobile Communication

6 Characterization

for real-time outphasing drive constituted a strong motivation to build a digital version

of the setup so that the demonstrator can eventually be tested with some standard com-

munication signals. After all, besides the quest for high efficiency, it was the modern

advances in DSP and computational power that allowed to refuel the activities on the

Chireix architecture.

Figure 6.1: Basic outphasing measurements setup.

6.1.2 Digital Configuration

A block diagram of the built digital measurement setup is depicted in Fig. 6.2. The

PS2

PCMATLAB

FP

GA

TX1TX2

RX

DA

C

PS1

Vg

D1

D2

SPS

Vd

SW

−10 dB

−10 dB

40 dBOUTPHASING DUT

−10 dBPM

(a) (b)

Figure 6.2: (a) Digital setup block diagram and (b) photo.

setup was configured for pulsed measurements by direct access to the IQ data, without

62

Page 79: Outphasing RF Power Ampli ers for Mobile Communication

6.1 Measurement Setup

the need for an external pulse source, before sending them to the FPGA platform1 via

LAN. The passive components were calibrated for losses and phase delays. Due to the

slightly different gains of the driver amplifiers (D1 and D2), a closed loop control algorithm

utilizing the power meter (PM) and a switch (SW) selecting the path to read has been

implemented. The controllable variables are: the RF, the pulse width, the duty cycle,

the input power levels at the device under test (DUT), the DUT gate voltage, the DUT

drain voltage and the outphasing angle θ at the DUT input plane. The measurement is

controlled in MATLAB environment. Later on, the setup was upgraded with a spectrum

analyzer (SA) at the output complementing the spectrum monitoring through the RX

path at the input.

6.1.3 Calibration

Before performing outphasing tests, a number of calibrations are to be made. Figure 6.3

shows the passive losses and delay imbalances that exist between the two branches. After

characterization with a network analyzer (NA), the collected data were logged into the

PC for automatic calibration purposes. Similarly, the output attenuation was captured.

1600 1800 2000 2200 2400 2600 2800−0.18

−0.16

−0.14

−0.12

−0.1

−0.08

−0.06

Frequency (MHz)

Loss

Imba

lanc

e (d

B)

(a)

1600 1800 2000 2200 2400 2600 2800−6.5

−6

−5.5

−5

−4.5

−4

Frequency (MHz)

Pha

se Im

bala

nce

(°)

(b)

Figure 6.3: (a) Losses (b) and delay imbalances relative to path 1.

As for the external drivers [69], an automatic control script allowed to balance the gain

between the two modules exhibiting slight differences (Fig. 6.4). For that purpose, the

switch [74] that allows readings to be toggled between either of the input paths was also

characterized for calibration (Fig. 6.5). A related script is contained in Appendix D.

1The FPGA used is an internal version for development purposes with a DAC rate of 307.2 MHz.

63

Page 80: Outphasing RF Power Ampli ers for Mobile Communication

6 Characterization

(a)

2 2.05 2.1 2.15 2.2 2.25 2.333

34

35

36

37

38

39

Frequency (GHz)

Gai

n (d

B)

Module 1Module 2

(b)

Figure 6.4: (a) Driver module and (b) small-signal gains.

(a) (b)

Figure 6.5: (a) The used switch and (b) its calibration setup.

Finally, to test the system functioning, a 3 dB combiner was exchanged momentarily in

place of the outphasing DUT and a power level of 21 dBm was applied at each of the

inputs. The outphasing angle was then (digitally) swept. Fig. 6.6 shows the difference

between a noncalibrated and a calibrated setup, where in the latter case the peak power

64

Page 81: Outphasing RF Power Ampli ers for Mobile Communication

6.1 Measurement Setup

is observed right at 0 outphasing angle, i.e. when the outphasing signals are expected

to be in-phase. The maximum output of slightly less than 24 dBm is due to the losses in

the combiner itself. Some exemplary synchronized pulsed signals are shown in 6.7.

(a)

−30 −20 −10 0 10 20 3022

22.5

23

23.5

24

θ (°)

Pou

t (dB

m)

No CorrectionSPI CAL

(b)

Figure 6.6: (a) 3 dB combiner and (b) outphasing measurement test.

(a) (b)

Figure 6.7: (a) Synchronized pulsed signals and (b) a zoomed view.

6.1.4 LO Leakage

The last remaining step before being able to conduct outphasing measurements is the

local oscillator (LO) suppression. As the power meter’s sensors used for accurate power

level readings instead of the SA are of broadband nature, suppressing the LO frequency

(around 2.3 GHz) further enhances the readings. This becomes ultimately needed for low

power readings as observed in the next Section. A basic compensation algorithm was

65

Page 82: Outphasing RF Power Ampli ers for Mobile Communication

6 Characterization

written in order to digitally achieve a cleaner spectrum (Fig. 6.8). As a consequence, this

contributed to the LO’s image frequency getting attenuated too. With that, the setup

2000 2100 2200 2300 2400 2500 2600−70

−60

−50

−40

−30

−20

−10

0

10

MHz

dBm

(a)

2000 2100 2200 2300 2400 2500 2600−70

−60

−50

−40

−30

−20

−10

0

10

MHz

dBm

(b)

Figure 6.8: (a) Spectrum seen without and (b) with LO suppression around 2.3 GHz.

was ready for the Chireix PA characterization and testing2.

6.2 Characterization using Static Measurements

Static outphasing measurements are used first to characterize the built Chireix PA. This

allows the programming of the SCS algorithm for later usage with real-time signals.

6.2.1 Outphasing Measurements

For a constant input power, the outphasing angle is swept and the output power and

corresponding efficiency values are fetched. These measurements were performed under

the following conditions: 2 % duty cycle for the pulsed outphased signals, V gs 3.8 V,

V ds 38 V and P in 35 dBm. Fig. 6.9 shows good agreement between simulations and

measurements where no circuit tuning has been made, confirming the previous analysis.

For such a heavy load modulation architecture, model-based design seems the favorable

way to enable a good realization, where similarly in this regard, some so called first-pass

Doherty designs are appearing in conjunction with the steady advances in GaN HEMT

modeling [75]. In Fig. 6.10, it can be seen that the percentage variation in efficiency

is kept less than 2 % within a 60 MHz interval (RF bandwidth target) and down to

9 dB PBO levels. The drain efficiency for 7.5 dB PBO peaks at 2.11 GHz and amounts

to 46.1 % approximately. Fig. 6.11 shows the measured efficiency of the Chireix PA for

different drain voltage levels demonstrating some potential to hybridize it with a supply

voltage modulated PA architecture [76].

2Code insights along with the function for suppressing the LO frequency are included in Appendix D.

66

Page 83: Outphasing RF Power Ampli ers for Mobile Communication

6.2 Characterization using Static Measurements

35 36 37 38 39 40 41 42 43 44 45 46 47 48 4910

20

30

40

50

60

70

80

Pout (dBm)

Dra

in E

ffici

ency

(%

)

MeasurementsADS Momentum

Figure 6.9: Harmonic Chireix outphasing at 2.14 GHz.

2080 2090 2100 2110 2120 2130 214030354045505560657075

Frequency (MHz)

Dra

in E

ffici

ency

(%

)

1 dB 6 dB 7 dB 7.5 dB 8 dB 9 dB

Figure 6.10: Measured efficiency at different PBO levels vs frequency.

29 31 33 35 37 39 41 43 45 47 495

15

25

35

45

55

65

75

Pout (dBm)

Dra

in E

ffici

ency

(%

)

28 V32 V36 V40 V44 V48 V

Figure 6.11: Measured efficiency for several drain supply voltages (RF 2.12 GHz and

P in 35 dBm).

67

Page 84: Outphasing RF Power Ampli ers for Mobile Communication

6 Characterization

6.2.2 Low Power Measurements

The dynamic range of an envelope modulated signal can reach 60 dB or more in practice

(theoretically infinite due to zero-crossing). The action of outphasing alone cannot support

such a range (Fig. 6.12); An unperfect cancellation of the two out-of-phase signals driving

the nonlinear PAs possibly due to transistor fabrication related imbalances in Vgs and/or

Vds limits the outphasing action dynamic range to 2025 dB. In order to cover the lower

(a) (b)

Figure 6.12: (a) Measured outphasing dynamic range as θ is swept and (b) corresponding

efficiency.

output power range, one way is to lower the driving signals’ power while keeping θ constant

moving therefore into a linear regime of operation [40]. As the PAR is well contained in

the outphasing dynamic range, this kind of mixed-mode operation does negligibly affect

the average efficiency. The measurements in this range were done after LO leakage digital

cancellation. In the following, complementary measurements using real-time signals with

the SCS programmed based on the static measurements are presented.

6.3 Real-Time Dynamic Measurement Results

The PA was tested with a 1-Carrier W-CDMA signal having a 7.5 dB PAR. It exhibited

around 45 % average drain efficiency with a 39.6 dBm average output power. Despite the

bandwidth expansion experienced with the individual outphasing signals, the amplified

signal after recombination retained the original bandwidth of 5 MHz. The ACLR values

without digital predistortion (DPD) amounted to 26 dBc approximately. The output

spectrum of the amplified signal is shown in Fig. 6.13. A similar test was carried out with

20 MHz 2-Carrier W-CDMA signal resulting in around 44 % average drain efficiency. Due

to the mixed-mode drive instead of an ideal outphasing drive, some nonnull dB PAR was

measured at the inputs to the DUT. Measurement results are summarized in Table 6.1.

68

Page 85: Outphasing RF Power Ampli ers for Mobile Communication

6.3 Real-Time Dynamic Measurement Results

Figure 6.13: Amplified signal’s spectrum One carrier.

Figure 6.14: Amplified signal’s spectrum Two carrier.

Table 6.1: Chireix PA measurement results.

Testing w 7.5 dB PAR W-CDMA 5 MHz 1C 20 MHz 2C

PAR S1 1.3 dB 1.8 dB

PAR S2 1.3 dB 1.8 dB

Average Pout 39.6 dBm 39.6 dBm

Average Drain Efficiency 45 % 44 %

69

Page 86: Outphasing RF Power Ampli ers for Mobile Communication

70

Page 87: Outphasing RF Power Ampli ers for Mobile Communication

Chapter 7

Outlook & Summary

The realization of a PA prototype confirming the operation of the promising Chireix ar-

chitecture for BTS applications has prompted the initiation of an investigation concerning

possible improvements in the future. In this process, a simulation environment using LS

models was invoked whenever possible. This Chapter covers some practices and recom-

mendations found to enhance the design’s performance. The Chapter wraps-up with a

summary concluding the work.

7.1 Future Work

7.1.1 Source Second-Harmonic Termination

It is known that the harmonic terminations at the input side play a critical role in the

performance of a single PA device [77]. To asses this effect on the Chireix PA, an in-

circuit harmonic source pull simulation is performed at the inputs of the presented Chireix

design. It was found that the 2nd harmonic reflection angle is the dominating aspect with

a significant role on PAE in PBO as seen in Fig. 7.1. This is the first time that two

efficiency peaks are simultaneously observed in a practical Chireix PA design using LS

models. It is expected however that some PAE degradation occurs upon EM Momentum

simulation and realization due to the passive networks (input matching and combiner)

dissipative losses. A very good option to mitigate that is to work at the transistor level

[78]. The obtained result constituted a motivation to check the efficiency behavior with

strictly smaller compensation angles and therefore a targeted lower BO peak (2.58). It

can be observed from Fig. 7.2 that the low drive PAE peak deteriorates with smaller θc

designs. This is attributed to the limited gain of the transistors as the outphasing principle

relies on constant input drive. A key solution is therefore to manufacture transistors with

higher gains.

71

Page 88: Outphasing RF Power Ampli ers for Mobile Communication

7 Outlook & Summary

Figure 7.1: Simulated effect of a dedicated 2nd harmonic termination at the input sides of

the Chireix PA.

30 32 34 36 38 40 42 44 46 480

10

20

30

40

50

60

70

80

Pout (dBm)

PA

E (

%)

θc = 5

θc = 7

θc = 9

θc =11

θc =13

θc =15

Figure 7.2: Simulated effect of smaller compensation angles Chireix designs.

7.1.2 Architecture Load-Pull

In Chapter 4, the presented discussion on the power capability resulted in the equa-

tions (4.4) and (4.10) as first approximations to a ZL design value. On the other hand,

Fig. 4.9 gave an idea about the range to expect for selecting the compensation inductance

72

Page 89: Outphasing RF Power Ampli ers for Mobile Communication

7.1 Future Work

Lcomp. Alternatively, a search for the best combination of these two design parameters

is proposed. This can be achieved by forming the Chireix PA circuit with the combiner

as equation blocks in schematic environment as described in Chapter 5, and then pa-

rameterizing these variables around the found approximations resulting in an in-circuit

optimization (Fig. 7.3). Average efficiency calculations can be involved at this stage as

outlined in Section 3.5. Additional simulations with a parametrized θc (or other bias volt-

age variables for instance) can be incorporated. With the LP method, regardless whether

in measurement or simulation environments, being quiet familiar for a single device [79],

the suggested approach can be said to be analogous to load-pulling the Chireix PA ar-

chitecture instead. After finding the optimal range, a refined search can be made. The

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 15.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 16.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 17.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 18.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 19.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 20.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 21.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 22.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 23.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 24.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 25.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 26.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 27.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 28.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 29.0 Ohm

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 30.0 Ohm

Figure 7.3: Chireix architecture LP: ZL is varied from 15 Ω to 30 Ω in steps of 1 Ω and

Lcomp varied according to assumed Couts between 1.7 pF and 3.7 pF in steps

of 0.1 pF. The x-axis corresponds to Pout (dBm) and the y-axis to PAE (%).

results are plotted in Fig. 7.4. In such a heavy load-modulated architecture, the classical

tweaking by employment of tuning sticks on the board is not expected to result in finding

the optimal outcomes. While for a PA made out of a single transistor this can be effective

[80], applying this approach to the Chireix combiner can lead for instance to improvements

73

Page 90: Outphasing RF Power Ampli ers for Mobile Communication

7 Outlook & Summary

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 20.0 Ohm

2.9 pF 3 pF3.1 pF3.2 pF3.3 pF3.4 pF3.5 pF

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 20.5 Ohm

2.9 pF 3 pF3.1 pF3.2 pF3.3 pF3.4 pF3.5 pF

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 21.0 Ohm

2.9 pF 3 pF3.1 pF3.2 pF3.3 pF3.4 pF3.5 pF

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 21.5 Ohm

2.9 pF 3 pF3.1 pF3.2 pF3.3 pF3.4 pF3.5 pF

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 22.0 Ohm

2.9 pF 3 pF3.1 pF3.2 pF3.3 pF3.4 pF3.5 pF

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 22.5 Ohm

2.9 pF 3 pF3.1 pF3.2 pF3.3 pF3.4 pF3.5 pF

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 23.0 Ohm

2.9 pF 3 pF3.1 pF3.2 pF3.3 pF3.4 pF3.5 pF

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 23.5 Ohm

2.9 pF 3 pF3.1 pF3.2 pF3.3 pF3.4 pF3.5 pF

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 24.0 Ohm

2.9 pF 3 pF3.1 pF3.2 pF3.3 pF3.4 pF3.5 pF

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 24.5 Ohm

2.9 pF 3 pF3.1 pF3.2 pF3.3 pF3.4 pF3.5 pF

30 32 34 36 38 40 42 44 46 480

1020304050607080

ZL = 25.0 Ohm

2.9 pF 3 pF3.1 pF3.2 pF3.3 pF3.4 pF3.5 pF

Figure 7.4: Chireix architecture LP: ZL is varied from 20 Ω to 25 Ω in steps of 0.5 Ω and

Lcomp varied according to assumed Couts between 2.9 pF and 3.5 pF in steps

of 0.1 pF. The x-axis corresponds to Pout (dBm) and the y-axis to PAE (%).

in one aspect such as efficiency while loosing BW. Even if one is trying to manually tune

the Chireix combiner for one path, it is unlikely that the combiner will remain balanced

as a whole and therefore the performance will drift unexpectedly. Therefore the suggested

architecture LP can prove a helpful tool in searching the pZL, Lcomp, θcq space before any

hardware realization taking place.

7.1.3 Miscellaneous

In the following, a number of different aspects are listed for future considerations.

Full utilization of simulator options: The adequate use of state-of-the-art CAD

abilities is expected to result in more accurate modeling of the matching structures,

reducing further discrepancies between simulations and measurements. Considering

for instance the use of area pins [81] additionally contributes to the design’s success.

Employment of rotated radial stubs: It has been argued that the BW expansion

74

Page 91: Outphasing RF Power Ampli ers for Mobile Communication

7.1 Future Work

experienced after splitting the incoming signal to outphased signals requires some

broadband PA performance. In this regard, employing rotated butterfly radial stub

[82] topologies could be useful.

Miniaturization of the combiner: Alternatively, the miniaturization of the com-

biner for instance by making it integrated could lead to reductions simultaneously

in size and costs.

Exploration of other classes: As long as the harmonics are isolated, some classes

such as class-E [17] could further contribute to efficiency1 when used as the Chireix

PA cores. On the other hand, class-J [13, 67] could prove useful when it comes to

overcoming the BW challenges.

Hybridization with other architectures: With several drain voltages, the mea-

surement presented in the last Chapter revealed some potential for applying drain

voltage modulation to the Chireix PA. Considering new alternatives when it comes

to hybridization with other types of architecture might lead to beneficial outcomes.

Mixed-mode smooth transition: The measured ACLR values hovered around

26 dBc. Before resorting to any DPD technique [83, 84], the ACLR can first be

improved by recoding the transition between the linear and outphasing regimes so

that θ’s function is continuously differentiable rather than continuous (Fig. 7.5).

10

20

30

40

50

60

70

80

90

100

~ Output Power

θ()

Implemented functionSmoothed function

Figure 7.5: Mixed-mode outphasing angle functions.

1with maximum efficiencies beyond the maximum 78 % of the ideal class-B.

75

Page 92: Outphasing RF Power Ampli ers for Mobile Communication

7 Outlook & Summary

7.2 Summary

In this work, the suitability of outphasing PAs for use as a high efficiency solution in

next generation BTS applications has been investigated. Analysis and comparison of a

multitude of outphasing variants suggested that the original Chireix concept still holds

the most promises among them. Consequently, the work presented the first analysis on

the implementation of the Chireix concept using state-of-the-art transistor devices rather

than vacuum tubes or ideal PAs.

Specifically, the output capacitance effects on Chireix PA performance has been consid-

ered in detail. The study showed that unexpected changes in the harmonic voltages at

the transistor terminals could significantly alter the nonlinear capacitance’s value during

outphasing operation. This makes it “uncompensatable” and subsequently explains why

any nonharmonic transistor implementation of the combiner was unsuccessful in terms of

the predicted Chireix performance. Besides the requirement of a desired harmonic termi-

nation(s) to boost efficiency, it was shown that the inclusion of at least 2nd harmonic traps

on the output side is a must for Chireix PA realization. That prevents any power exchange

between the two PA paths at the 2nd harmonic. As well, it results in the stabilization

of the nonlinear output capacitance during outphasing action and therefore enables its

compensation (mathematically with an inductance) for proper outphasing functioning.

Its value to be compensated for has been described most importantly as a function of the

outphasing signals’ magnitude in addition to the bias voltages. The analysis has been

fortified with the found optimum value of 3.2 pF for the considered Chireix design using

CGH27030F Cree GaN HEMTs, which deviates from the extracted small-signal Cout at

the same bias voltages.

On the other hand, by not fixing the second harmonic terminations in the combiner, it

was seen that modulating the input amplitude too is required. That worked only in some

specific cases.

The work has also reported that the maximum power capability of the Chireix architecture

is in practice affected by the compensation angle choice. However the power degradation

effects were found to be minor and posed no severe consequences on the latter’s selection.

Based on these findings, a method to design a practical Chireix PA using transistors has

been proposed in which the harmonic Chireix combiner is mathematically defined as a

3-port network in a first step. In an attempt to cover the analytical, numerical, simulation

and measurements aspects, the discussed outcomes have been used to build a 60 W Chireix

PA. A dedicated setup with widely flexible digital control abilities for characterizing and

driving the Chireix PA has been built. All aspects were found to reenforce the presented

understanding. The PA was tested with 5 MHz 1-Carrier and 20 MHz 2-Carrier W-CDMA

76

Page 93: Outphasing RF Power Ampli ers for Mobile Communication

7.3 Zusammenfassung

signals of 7.5 dB PAR, exhibiting respectively 45 % and 44 % average drain efficiency.

The work concluded with recommendations for improvements to be considered in the near

future. Early LS simulations supplementary incorporating the 2nd harmonic terminations

in the input matching networks pointed out to the possibility of realizing the two theorized

peaks in the Chireix PA PAE curve for the first time. Fig. 7.6 shows a comparison

−16 −14 −12 −10 −8 −6 −4 −2 00

10

20

30

40

50

60

70

80

PBO (dB)

Dra

in E

ffici

ency

(%

)

[38][39][40]This workThis workChireix ideal

Figure 7.6: Summary.

with other results from literature. This work further closes the gap between practice

and ideal Chireix PA performance. Together with high gain transistors, a realization

as an integrated solution satisfying the harmonic combiner’s 3-port S-parameter could

finally pave the way for the commercialization of the Chireix PA for next generation

telecommunication applications.

7.3 Zusammenfassung

Die vorliegende Arbeit hat die Eignung von Chireix-Verstarkern fur zukunftige Mobilfunk-

Basisstationen untersucht. Die Abwagung unterschiedlicher Varianten des Outphasing-

Verfahrens hat gezeigt, dass der ursprungliche Ansatz von Chireix noch immer den großten

Nutzen verspricht. Hierauf aufbauend setzte die vorliegende Arbeit zum ersten Mal

das klassische Chireix-Verfahrens mittels moderner Transistorbauelemente anstelle von

Vakuum-Rohren oder (in der Theorie) idealisierten Leistungsverstarkern um.

Hierfur musste insbesondere der Einfluss der Ausgangskapazitat auf das Verhalten eines

Chireix-Verstarkers untersucht werden. Im Outphasing-Betrieb hat sich ein unerwartet

ausgepragter Einfluss der Spannungen an den Transistoranschlussen bei Vielfachen der

Grundfrequenz auf den Wert der (nichtlinearen) Ausgangskapazitat bei der Grundwelle

gezeigt. In Folge lasst sich die Ausgangskapazitat nicht kompensieren. Die vorliegende

77

Page 94: Outphasing RF Power Ampli ers for Mobile Communication

7 Outlook & Summary

Arbeit konnte so zum ersten Mal erklaren, weswegen verschiedene Ansatze aus der Ver-

gangenheit unerwartet unbefriedigende Ergebnisse gezeigt hatten: Die erfolgreiche Um-

setzung des Chireix-Verfahren mithilfe von Transistoren erfordert beim Bau des Chireix-

Kombiners eine Berucksichtigung des Transistor-Verhaltens bei den Oberwellen ebenso

wie bei der Tragerfrequenz! Neben dem Einfluss geeigneter harmonischer Abschlusse auf

den Wirkungsgrad konnte gezeigt werden, dass zumindest bei der zweifachen Grundwelle

die Isolation der beiden Verstarkerpfade unabdingbar fur die Funktion des Chireix-

-Verstarkers ist: Im Chireix-Verstarker muss die Ausgangsimpedanz der aktiven Bauele-

mente im Summationsglied (resonant) ausgeglichen werden. Ohne Isolation verhindert

der wechselseitige Einfluss der Oberwellen des einen Transistors auf die Ausgangskapazitat

des anderen eine erfolgreiche Kompensation. Schließlich wurde gezeigt, dass der auszugle-

ichende Kapazitatswert nicht nur von den eingestellten Transistor-Arbeitspunkten, son-

dern vielmehr vom anliegenden Signalpegel abhangt. Diese Erkenntnis wird untermauert

durch eine deutliche Ablage des im Verstarkerentwurf anzusetzenden Kapazitatswertes

von dem aus dem Modell extrahierten Kleinsignalwert der Ausgangskapazitat der ver-

wendeten Transistoren (CGH27030F von Cree). Auf der anderen Seite konnte gezeigt

werden, dass in einzelnen Sonderfallen auf einen isolierenden Abschluss bei den Ober-

wellen verzichtet werden kann, wenn zusatzlich zu der relativen Phasenlage der Ein-

gangssignale auch der Eingangspegel in Abhangigkeit von der gewunschten Ausgangsleis-

tung angepasst wird. In der Arbeit wurde auch gezeigt, dass die Leistungsfahigkeit

des Chireix-Verstarkers im praktischen Beispiel vom gewahlten Kompensationswinkel

abhangt. Die Abhangigkeit erscheint jedoch nicht ausgepragt genug, um die Wahl des

Kompensationswinkels zu beeinflussen. Auf den dargestellten Erkenntnissen aufbauend,

konnte ein neuartiges Entwurfsverfahren fur Chireix-Verstarker erarbeitet werden, das

das Summationsglied als Dreitor auffasst, dessen Verhalten bei Grundfrequenz und Ober-

wellen betrachtet wird. Anhand eines 60 W Beispielverstarkers wird der Verstarker teils

anhand analytischer Losungen und teils mithilfe der numerischen Simulation optimiert

und schließlich mithilfe von Messungen charakterisiert. Die unterschiedlichen Blickwinkel

fugen sich zu einem stimmigen Gesamtbild zusammen und unterstutzen die dargestellte

Betrachtungsweise, insbesondere die große Bedeutung der Oberwellen beim Entwurf des

Summationsgliedes.

Wird der Beispielverstarker in der Messung mit einem 5 MHz breiten 1-Trager-W-CDMA-

Signal beaufschlagt, zeigt er einen Wirkungsgrad von 45 %, bei einem 2-Trager-W-CDMA-

Signal mit 20 MHz Bandbreite sind es 44 %.

Die Arbeit schließt mit einem Ausblick auf zukunftige Verbesserungsmoglichkeiten.

Berucksichtigen wir in ersten Großsignalsimulationen neben dem ausgangsseitigen har-

monischen Abschluss auch das eingangsseitige Verhalten bei der ersten Oberwelle, so

78

Page 95: Outphasing RF Power Ampli ers for Mobile Communication

7.3 Zusammenfassung

finden wir Hinweise, dass sich die ausgepragte Uberhohung des Wirkungsgrades bei niedri-

gen Singalpegeln wie sie die Theorie des Chireix-Verstarkers fordert zum ersten Mal auch

im praktischen Beispiel sollte verwirklichen lassen. Die Simulationsergebnisse werden in

Abb. 7.6 mit anderen Arbeiten vergleichen: Unter Berucksichtigung des eingangsseit-

igen Oberwellenabschlusses verkleinert die vorliegende Arbeit die Lucke zwischen den

bisherigen experimentellen Ergebnissen und dem theoretischen Versprechen des Chireix-

Verstarkers deutlich.

Werden die Lehren der vorliegenden Arbeit zur Unabdingbarkeit der

Oberwellenterminierung in einem integrierten Aufbau und unter Einsatz von Transis-

toren mit hoher Verstarkung umgesetzt, kann dies dem Chireix-Verstarker den Weg fur

den Einsatz in Mobilfunk-Basisstationen ebnen.

79

Page 96: Outphasing RF Power Ampli ers for Mobile Communication

80

Page 97: Outphasing RF Power Ampli ers for Mobile Communication

Appendix A

Transmission Line Equations

Figure A.1: Transmission Line.

Assuming a monochromatic wave (time harmonic fields), all quantities will be proportional

to ejωt, and thus the phasor rV pzq depicted in Fig. A.1 is defined according to

vpz, tq <!rV pzqejωt) (A.1)

With β 2πλ

, the solution to the telegrapher’s equation [85] results in:

rV pzq V ejβz V ejβz (A.2a)

rIpzq V

Z0

ejβz V

Z0

ejβz (A.2b)

Γ V

V ZL Z0

ZL Z0

(A.3)

rV pzq V pejβz Γejβzq (A.4)

Pav 1

2<!rV rI) (A.5)

81

Page 98: Outphasing RF Power Ampli ers for Mobile Communication

82

Page 99: Outphasing RF Power Ampli ers for Mobile Communication

Appendix B

Some Probabilistic Notions

If X is a random variable characterized by a probability density function (PDF) fpxq,then its expected value or mean µ can be computed as

µ 8»8

x fpxq dx (B.1)

The value of x for which fpxq has its maximum value is called the mode of the random

variable and is denoted by σ, hence

fpσq maxpfpxqq (B.2)

The cumulative distribution function (CDF) describes the probability that the random

variable X will be found to have a value less than or equal to x:

F pxq x»

8

fptq dt (B.3)

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 150

0.1

0.2

0.3

0.4

0.5

0.6

0.7

x

f(x)

σ =1σ =2σ =3σ =4σ =5

(a)

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 150

0.2

0.4

0.6

0.8

1

x

F(x)

σ =1σ =2σ =3σ =4σ =5

(b)

Figure B.1: (a) PDFs and (b) CDFs corresponding to different Rayleigh distribution

modes.

83

Page 100: Outphasing RF Power Ampli ers for Mobile Communication

B Some Probabilistic Notions

Studies of the PDF and CDF of the Rayleigh distribution can be found in many textbooks

such as [86]. The respective functions are given by

fpxq x

σ2 e x2

2σ2 (B.4a)

F pxq 1 ex2

2σ2 (B.4b)

for x ¥ 0.

These are plotted in Fig. B.1 for different mode values. For this particular distribution,

the mean and mode are linked through

µ σ cπ

2(B.5)

84

Page 101: Outphasing RF Power Ampli ers for Mobile Communication

Appendix C

Proof of the DC & Fundamental Compo-

nent Expressions of the Nonlinear Out-

put Capacitance

The corresponding Fourier series coefficients are given by:

a0 ω0

π

2πω0»0

Qres

VDC V0 sinpω0tqdt (C.1a)

a1 ω0

π

2πω0»0

Qres

VDC V0 sinpω0tq cospω0tqdt (C.1b)

b1 ω0

π

2πω0»0

Qres

VDC V0 sinpω0tq sinpω0tqdt (C.1c)

Using the identities dduptanuq du

1u2, d

duparctanuq du

cos2 uand d

duplnuq du

u, it can be

shown that

a0 2Qres

π

arctan

V0VDC tanpω0t2q?

V 2DCV

20

aV 2

DC V 20

2πω0

0

a1 Qres

πV0

pVDC V0 sinpω0tqq 2πω00

b1 Qres

πV0

ω0t2VDC arctan

V0VDC tanpω0t2q?

V 2DCV

20

aV 2

DC V 20

2πω0

0

85

Page 102: Outphasing RF Power Ampli ers for Mobile Communication

C Proof of the DC & Fundamental Component Expressions of the Nonlinear Output

Capacitance

Further substitution of the integrals intervals results in

a0 nDC2QresaV 2

DC V 20

a1 0

b1 2Qres

V0

1 nf0

VDCaV 2

DC V 20

where following from the arctan function, nDC and nf0 P Z t... 1, 0, 1, ...u. To deter-

mine these integers, the following limits whose values are known for V0 0, i.e. for a

static Coutptq Qres

VDC, are evaluated:

limV0Ñ0

a0

2 Qres

VDC

(C.4)

limV0Ñ0

ba2

1 b21 0 (C.5)

yielding nDC nf0 1. The large-signal DC and fundamental components of the output

nonlinear capacitance can hence be written as

CoutpDCq a0

2 Qresa

V 2DC V 2

0

(C.6)

Coutpf0q ba2

1 b21 2

Qres

V0

VDCa

V 2DC V 2

0

1

(C.7)

86

Page 103: Outphasing RF Power Ampli ers for Mobile Communication

Appendix D

Code Samples

Overall, 17 MATLAB functions were developed and 7 instrument drivers were invoked in

addition to 20 loaded calibration files (including the cables’). In the following, three sam-

ple scripts, the first one corresponding to loading the calibration data and generating the

calibration look-up-tables (LUTs) for later access, the second one corresponding to the ini-

tialization of the digital control setup and its configuration for outphasing measurements,

and the last one corresponding to the LO suppression/cancellation are included.

87

Page 104: Outphasing RF Power Ampli ers for Mobile Communication

% NSN - RF Predevelopment

% Zeid Abou-Chahine

% Generates phase and loss imbalances look up tables for the calibration

% of the different pathes (passive components and switch)

% Arbitrary reference taken: path1

% clc

% clear all

close all

global freq;

global Inter_SPI;

global Inter_P1_Loss;

global Inter_P2_Loss;

global Inter_SLI;

global Inter_SOL;

Step = 0.5; % step for interpolation in MHz

Violet = [127/255 16/255 162/255];

Orange = [255/255 175/255 0/255];

Yellow = [255/255 211/255 8/255];

Red = [175/255 0/255 51/255];

Green = [52/255 195/255 51/255];

Gray_L = [104/255 113/255 122/255];

Gray_M = [163/255 166/255 173/255];

Gray_S = [234/255 234/255 234/255];

Color = [Violet; Orange; Yellow; Red; Green; Gray_L; Gray_M; Gray_S];

set(0,'DefaultAxesColorOrder',Color)

Import measurement files

% % "Semi-Rigid" coaxial cable

[Freq,Cable_dB] = importfile('Cable_dB.CSV',13, 213);

[Freq,Cable_Phase] = importfile('Cable_Phase.CSV',13, 213);

% % Coupler 10dB

[Freq,PM_Coupling_dB] = importfile('C10dB_Coupled_dB.CSV',13, 213);

[Freq,PM_Coupling_Phase] = importfile('C10dB_Coupled_Phase.CSV',13, 213);

[Freq,PM_Through_dB] = importfile('C10dB_Through_dB.CSV',13, 213);

[Freq,PM_Through_Phase] = importfile('C10dB_Through_Phase.CSV',13, 213);

% % Switch

[Freq,P1_SW_dB] = importfile('SW_P1_dB.CSV',13, 213);

[Freq,P1_SW_Phase] = importfile('SW_P1_Phase.CSV',13, 213);

[Freq,P2_SW_dB] = importfile('SW_P2_dB.CSV',13, 213);

[Freq,P2_SW_Phase] = importfile('SW_P2_Phase.CSV',13, 213);

D Code Samples

88

Page 105: Outphasing RF Power Ampli ers for Mobile Communication

% % Narda Couplers

[Freq,P1_Coupling_dB] = importfile('42227_Coupled_dB.CSV',13, 213);

[Freq,P1_Coupling_Phase] = importfile('42227_Coupled_Phase.CSV',13, 213);

[Freq,P1_Through_dB] = importfile('42227_Through_dB.CSV',13, 213);

[Freq,P1_Through_Phase] = importfile('42227_Through_Phase.CSV',13, 213);

[Freq,P2_Coupling_dB] = importfile('42228_Coupled_dB.CSV',13, 213);

[Freq,P2_Coupling_Phase] = importfile('42228_Coupled_Phase.CSV',13, 213);

[Freq,P2_Through_dB] = importfile('42228_Through_dB.CSV',13, 213);

[Freq,P2_Through_Phase] = importfile('42228_Through_Phase.CSV',13, 213);

% % Output Attenuation

% % N.B. Consider cables attenuation too if used

% 40 dB Attenuator

[Freq,OutAtt] = importfile('A40dB_dB.CSV',13, 213);

% [Freq,OutAtt_Phase] = importfile('A40dB_Phase.CSV',13, 213);

% 20 dB Attenuator

% [Freq,OutAtt] = importfile('A20dB_dB.CSV',13, 213);

% No Attenuator

% OutAtt=zeros(length(OutAtt),1);

% Output Coupler

[Freq,OutCoup] = importfile('C20dB_Through_dB.CSV',13, 213);

OutAtt = OutAtt + OutCoup;

Freq = Freq*1e-6;

Freq_min = Freq(1);

Freq_max = Freq(length(Freq));

% % Interpolate with MHz Step specified at the start of the file

freq = Freq_min:Step:Freq_max; % zoomed frequency vector for interpolation

freq = freq.'; % transpose

Pathes Phase Imbalance (Input)

% % PA IN1toRX phase

P1_Phase = unwrap(Cable_Phase, 180) + unwrap(PM_Through_Phase, 180) +...

unwrap(P1_SW_Phase, 180) +...

unwrap(P1_Coupling_Phase, 180) - unwrap(P1_Through_Phase, 180);

% % PA IN2toRX phase

P2_Phase = unwrap(Cable_Phase, 180) + unwrap(PM_Through_Phase, 180) +...

unwrap(P2_SW_Phase, 180) +...

unwrap(P2_Coupling_Phase, 180) - unwrap(P2_Through_Phase, 180);

Phase_Imbalance = P2_Phase - P1_Phase; % (P1 is the arbitrary reference)

SPI = smooth(Phase_Imbalance,0.1,'rloess'); % Smoothed Phase Imbalance

% rloess is suitbale because it has a filter-like property...

Inter_SPI = spline(Freq,SPI,freq); % Interpolated Smoothed Phase Imbalance

% Test individually smoothed phases (heavy loss of info)

% SP1 = smooth(P1_Phase,0.1,'rloess');

% SP2 = smooth(P2_Phase,0.1,'rloess');

% iSP = SP1 - SP2;

89

Page 106: Outphasing RF Power Ampli ers for Mobile Communication

figure

% plot(Freq, P1_Phase);

% plot(Freq, wrapTo360(P1_Phase)) % equi to mod(P1_Phase,360)

% plot(Freq, P1_Phase,Freq, P2_Phase)

% plot(Freq, SPI);

% plot(Freq, Phase_Imbalance, Freq, SPI);

% plot(Freq, Phase_Imbalance, Freq, SPI, Freq, iSP);

% plot(Freq,Phase_Imbalance,Freq,SPI,freq,Inter_SPI);

plot(Freq,SPI,freq,Inter_SPI,'LineWidth',1.5);

grid on;

xlabel('Frequency (MHz)');

ylabel('Phase Imbalance (°)');

save('PathesPhaseImbalance.mat','freq','Inter_SPI');

Pathes Loss Imbalance (Input)

% % PA IN1toPM loss

P1_Through = PM_Coupling_dB + P1_SW_dB + P1_Coupling_dB - P1_Through_dB;

P1_Loss = -P1_Through;

Inter_P1_Loss = spline(Freq,P1_Loss,freq); % Interpolated Path1 Loss

% PA IN2toPM loss

P2_Through = PM_Coupling_dB + P2_SW_dB + P2_Coupling_dB - P2_Through_dB;

P2_Loss = -P2_Through;

Inter_P2_Loss = spline(Freq,P2_Loss,freq); % Interpolated Path2 Loss

Loss_Imbalance = P2_Loss - P1_Loss; % (P1 is the arbitrary reference)

SLI = smooth(Loss_Imbalance,0.1,'rloess'); % Smoothed Loss Imbalance

% SLI = smooth(Loss_Imbalance,5); % Smoothed Loss Imbalance

Inter_SLI = spline(Freq,SLI,freq); % Interpolated Smoothed Loss Imbalance

figure

% plot(Freq,P1_Loss,Freq,P2_Loss);

% plot(Freq,Loss_Imbalance);

% plot(Freq,Loss_Imbalance,Freq,SLI);

% plot(Freq, SLI);

plot(Freq,Loss_Imbalance,Freq,SLI,freq,Inter_SLI,'LineWidth',1.5);

grid on;

xlabel('Frequency (MHz)');

ylabel('Loss Imbalance (dB)');

Output Attenuation

Output_Loss = -OutAtt;

SOL = smooth(Output_Loss,0.1,'rloess'); % Smoothed Output Loss

Inter_SOL = spline(Freq,SOL,freq); % Interpolated Smoothed Output Loss

D Code Samples

90

Page 107: Outphasing RF Power Ampli ers for Mobile Communication

figure

plot(Freq,Output_Loss,Freq,SOL,freq,Inter_SOL,'LineWidth',1.5);

grid on;

xlabel('Frequency (MHz)');

ylabel('Output Attenuation (dB)');

save('PathesLosses.mat','freq','Inter_P1_Loss',...

'Inter_P2_Loss','Inter_SLI','Inter_SOL');

Other Smoothing/Filtering Options

% % % figure

% % % f=fit(Freq,Mag_Imbalance,'smoothingspline');

% % % p = polyfit(Freq,Mag_Imbalance,6)

% % % g = polyval(p,Freq);

% % % % plot(f,cdate,pop)

% % % plot(f,Freq,Mag_Imbalance)

% % % figure

% % % plot(Freq,g,Freq,Mag_Imbalance)

Published with MATLAB® R2013a

91

Page 108: Outphasing RF Power Ampli ers for Mobile Communication

% NSN - RF Predevelopment

% Zeid Abou-Chahine

% Initializes and configures setup for outphasing measurements

clc

close all

clear all

pause on

% pause(n) % pause n seconds

% num2str()

% str2num('') or str2double('')

% latter is faster but restricted to scalar not array of scalars

% freq = 2140e6;

% strcat('FREQ ',num2str(freq)) does not preserve the space

% horzcat('FREQ ',num2str(freq))

Initialize FPGA

disp('Switch SG ON.')

disp('Switch GAIA board ON.')

disp('Switch DAC board ON.')

disp('Wait for GAIA complete bootup (~6.3A SS current).')

disp('Type return once done.')

keyboard

startup_ledaNew;

pause(0.5);

disp('Connection with GAIA established');

disp('Initializing board...');

gpb.initBoard;

disp('Board is ready');

pause(0.5);

Measurement Conditions and Initial Settings

global T_ON;

global T;

global cap_mode;

global data_mode;

global RF;

global x_Sinus1;

global x_Sinus2;

global VF1;

global VF2;

global VF_Safety;

global TrigS; %INT1 or INT2

D Code Samples

92

Page 109: Outphasing RF Power Ampli ers for Mobile Communication

T_ON = 5e-6; % (s)

T = 250e-6; % (s)

cap_mode = 0; % 0 -> capture TX DPD_out and PDRX data

data_mode = 6; % JEDEC ADC 4

RF = 2120; % (MHz)

VF1 = 0.02;

VF2 = 0.02;

TrigS = 'INT1'; % Default setting for PM trigger source (output)

VF_Safety = 0.5; % (1 upper limit results in an error from GAIA anyway)

% level should be determined apriori manually.

% depends on drivers/predrivers

Ig = 0.05; % (A) limit

Vd_Sumitomo = 50; % (V)

Vd_Cree = 38; % (V)

Vd = Vd_Cree;

Id = 2.5; % (A) limit

V_Driver = 5; % (V)

I_Driver = 5; % (A)

V_Fan = 15; % (V)

I_Fan = 0.3; % (A) limit

I_SW = 0.05; % (A) limit

Load Calibration Files into MATLAB

% Generate pathes calibration look up tables if needed

% Gen_Cal_Tables % (Concerned variables should be set to global in the

% original code)

load PathesLosses.mat;

load PathesPhaseImbalance.mat;

Connect Instruments

% AWG = connectZInstrument('AWG');

SG1 = connectZInstrument('SG1');

PS1 = connectZInstrument('PS1');

PS2 = connectZInstrument('PS2');

PS3 = connectZInstrument('PS3');

SPS = connectZInstrument('SPS');

PM = connectZInstrument('PM');

MM = connectZInstrument('MM');

SA = EQUIPMENT.FSQ;

PS3.Display.Text = 'BISMILLAH';

93

Page 110: Outphasing RF Power Ampli ers for Mobile Communication

pause(3)

invoke(PS3.Display, 'Clear');

Configure SG1 (In case not manually set)

% Supply ref osc to GAIA

Configure_SG(SG1);

Configure MM

% Use the Range property to specify the expected value of the input signal.

% Ranges: 10 mA, 100 mA, 1 A, 3 A

MM.Dccurrent.Range = 3;

MM.Function = 'Agilent34401FunctionDCCurrent';

% MM.Math.Function = 'Agilent34401MathNull'; % Default Setting

% MM.Math.Function = 'Agilent34401MathAverage';

% MM.Math.Enabled = 'on';

% A = invoke(MM.Measurement, 'Read', 1); % waiting time in ms.

% B = invoke(MM.Measurement, 'Read', 1); % waiting time in ms.

% C = invoke(MM.Measurement, 'Read', 1); % waiting time in ms.

% MM.Math.Average; % Automatically Average will be (A+B+C)/3 given Enabled

% MM.Math.Count

% MM.Math.Enabled = 'off';

% invoke(MM.Display, 'settext', 'BISMILLAH')

if (invoke(MM.Utility, 'ErrorQuery') ~= 0)

disp('MM error');

end

Configure PS2

% Driver and FS Gate (Vg)

% PS2.init;

invoke(PS2.Output1, 'ApplyVoltageCurrent', 0, 0); % Driver signal

invoke(PS2.Output2, 'ApplyVoltageCurrent', V_Fan, I_Fan); % Fan signal

invoke(PS2.Output3, 'ApplyVoltageCurrent', -5, Ig); % Safety Vg Signal - Always negative

PS2.Outputs.Enabled = 'on';

pause(0.5);

invoke(PS2.Output1, 'ApplyVoltageCurrent', V_Driver, I_Driver); % Driver signal

pause(1);

Configure PS3

% Turn ON SW and select Path1 as default

% PS3.init;

invoke(PS3.Output1, 'ApplyVoltageCurrent', 0, I_SW); % 0V Path1 - 5V Path2

D Code Samples

94

Page 111: Outphasing RF Power Ampli ers for Mobile Communication

invoke(PS3.Output2, 'ApplyVoltageCurrent', 5, I_SW);

invoke(PS3.Output3, 'ApplyVoltageCurrent', -5, I_SW); % Always negative

PS3.Outputs.Enabled = 'on';

Configure System Power Supply

% FS Drain (Vd)

SPS.voltage = Vd;

SPS.current = Id; % current limit

SPS.outp = 'ON';

% % alpha = SPS.power % read power

Generate and Send Test Signals

% Pulsed

[x_Sinus1, x_Sinus2] = Sinus_Pulsed(RF,T_ON,T);

% CW

% [x_Sinus1, x_Sinus2] = Sinus_Pulsed(RF,T_ON,T_ON);

gpb.sendTxData2(x_Sinus1*VF1,x_Sinus2*VF2);

LOs Compensation

load DACs.mat;

gpb.setSPI('AD9122_1',[hex2dec('1B'),hex2dec('60')]); % Activate DC offsets

gpb.setSPI('AD9122_2',[hex2dec('1B'),hex2dec('60')]); % Activate DC offsets

AD9122_LO_feedthrough_compensation(gpb,DAC1,DAC2);

pause(3);

PS3.Output1.VoltageLevel = 0; %0V Path1 - 5V Path2

pause(1);

[DAC1,DAC2,LO_Suppression] = Suppress_LO(gpb,SA,DAC1,DAC2,1,1);

disp(horzcat('TX1 LO Suppression = ',num2str(LO_Suppression),' dB'));

% [DAC1,DAC2,LO_Suppression] = Suppress_LO_RX(gpb,DAC1,DAC2,1);

% disp(horzcat('TX1 LO Suppression = ',num2str(LO_Suppression)));

PS3.Output1.VoltageLevel = 5; %0V Path1 - 5V Path2

pause(1);

[DAC1,DAC2,LO_Suppression] = Suppress_LO(gpb,SA,DAC1,DAC2,2,1);

disp(horzcat('TX2 LO Suppression = ',num2str(LO_Suppression),' dB'));

% [DAC1,DAC2,LO_Suppression] = Suppress_LO_RX(gpb,DAC1,DAC2,2);

% disp(horzcat('TX2 LO Suppression = ',num2str(LO_Suppression)));

save('DACs','DAC1','DAC2');

95

Page 112: Outphasing RF Power Ampli ers for Mobile Communication

Calibrate PM

gpb.sendTxData2(x_Sinus1*0,x_Sinus2*0);

pause(5);

Configure_PM(PM,1,1,RF,T_ON); % PM,Z,CAL,f,T_ON

pause(1);

ReSend Test Signals

gpb.sendTxData2(x_Sinus1*VF1,x_Sinus2*VF2);

pause(3);

% Adjust_Pins(gpb,PS3,PM,15,15); % Adjust level to a starting low value

Define Colors

Violet = [127/255 16/255 162/255];

Orange = [255/255 175/255 0/255];

Yellow = [255/255 211/255 8/255];

Red = [175/255 0/255 51/255];

Green = [52/255 195/255 51/255];

Gray_L = [104/255 113/255 122/255];

Gray_M = [163/255 166/255 173/255];

Gray_S = [234/255 234/255 234/255];

Color = [Violet; Orange; Yellow; Red; Green; Gray_L; Gray_M; Gray_S];

Published with MATLAB® R2013a

D Code Samples

96

Page 113: Outphasing RF Power Ampli ers for Mobile Communication

function [DAC1,DAC2,LO_Suppression] = Suppress_LO_RX(gpb,DAC1,DAC2,I)

% NSN - RF Predevelopment

% Zeid Abou-Chahine

% This function runs an automatic adjustment algorithm for finding the DACs DC offsets

% for LO compensation. It is based on the gradient method.

% The DACs are updated with the found complex DAC values.

% Inputs:

% gpb board identifier

% SA Spectrum analyzer identifier

% DAC1 complex initial value for TX1 LO compensation via adjusting DC offsets on path1

% DAC2 complex initial value for TX2 LO compensation via adjusting DC offsets on path2

% I path to be compensated (either 1 or 2); The other path's (2 or 1) DAC

% value is kept untouched.

% Outputs

% DAC1 updated complex value

% DAC2 updated complex value

% LO_Suppression The amount of suppression achieved in dB on the selected path 'I'

global x_Sinus1;

global x_Sinus2;

global cap_mode;

global data_mode;

% close all

% 1b named Datapath control

% DatapC = '64';

% DatapC = hex2dec(DatapC);

% DatapC = dec2bin(DatapC)

% DatapC = str2num(DatapC)

% DatapC = bitor(DatapC, 00000100)

gpb.setSPI('AD9122_1',[hex2dec('1B'),hex2dec('60')]) % Activate DC offsets

gpb.setSPI('AD9122_2',[hex2dec('1B'),hex2dec('60')]) % Activate DC offsets

% gpb.setSPI('AD9122_1',[hex2dec('1B'),hex2dec('64')]) % Bypass DC offsets

TX_LO_Abstand = abs((gpb.config.fFBLO - gpb.config.fTXLO)*1e-6);

if I == 1

ProgDACsCommand =

'AD9122_LO_feedthrough_compensation(gpb,DAC1*polars(1)*exp(1i*pi/180*polars(2)),DAC2)';

disp('TX1 LO suppression running...');

N = length(x_Sinus1);

elseif I == 2

ProgDACsCommand =

97

Page 114: Outphasing RF Power Ampli ers for Mobile Communication

'AD9122_LO_feedthrough_compensation(gpb,DAC1,DAC2*polars(1)*exp(1i*pi/180*polars(2)))';

disp('TX2 LO suppression running...');

N = length(x_Sinus2);

end

Violet = [127/255 16/255 162/255];

Orange = [255/255 175/255 0/255];

Yellow = [255/255 211/255 8/255];

Red = [175/255 0/255 51/255];

Green = [52/255 195/255 51/255];

Gray_L = [104/255 113/255 122/255];

Gray_M = [163/255 166/255 173/255];

Gray_S = [234/255 234/255 234/255];

Color = [Violet; Orange; Yellow; Red; Green; Gray_L; Gray_M; Gray_S];

TraceC = Yellow;

AxisC = Yellow;

PlotBack = 'black';

FigBack = 'black';

FS = 16;

LW = 1.4;

% TraceC = Yellow;

% AxisC = Gray_L;

% PlotBack = 'black';

% FigBack = 'black';

% FS = 16;

% LW = 1.4;

FPS = 5; %frames per second for video recording

Capture Settings Read SA

scrsz = get(0,'ScreenSize');

figure('Renderer','zbuffer','Position',[scrsz(3)/4 scrsz(4)/3 60*16 60*9])

% figure('Renderer','OpenGL') results in a prob with the box on

set(gcf, 'Color',FigBack)

y_tilde = zeros(N,1);

GAIA_RAM = gpb.fetchSignals(N,cap_mode,'SYNC',data_mode);

y_tilde = y_tilde + GAIA_RAM.RxB2;

clear GAIA_RAM

ampdb(y_tilde(1:2:end), gpb.config.fTXDACNCO*1e-6);

LinePlots = get(gca, 'Children');

set(LinePlots,'Color',TraceC,'LineWidth',LW);

h=get(gca, 'children');

f=get(h, 'XData');

dB=get(h, 'YData');

D Code Samples

98

Page 115: Outphasing RF Power Ampli ers for Mobile Communication

TXLOind = find(f>=TX_LO_Abstand,1,'first');

P0_LO = dB(TXLOind)

set(gca,'Color',PlotBack);

set(gca,'FontSize',FS)

grid on

set(gca,'Xcolor',AxisC);

set(gca,'Ycolor',AxisC);

box on

grid on

xlim([f(1) f(end)])

ylim([floor(min(dB)/5)*5 ceil(max(dB)/5)*5])

% xlabel('RX Abstand (MHz)','FontSize',FS)

% ylabel('dB','FontSize',FS)

set(gca,'NextPlot','replaceChildren','Visible','on');

% Prepare for recording

% vidObj = VideoWriter('LO_Supression_DACs_advUser_Test','MPEG-4');

vidObj = VideoWriter(['LO_Supression_DAC',num2str(I),'_advUser'],'Motion JPEG AVI');

vidObj.Quality = 100;

vidObj.FrameRate = FPS;

open(vidObj);

writeVideo(vidObj, getframe(gcf)); % take first snapshot

DAC Compensation

Polars = [];

P_LO = [];

polars = [1 0]; % recommended start value of 1 0 corresponds to no modification of DACs

% step = [0.2 4]; % initial step width; set after P0_LO assessment

step_reduction = [0.6 0.6]; % reduction factors of step width

% step_reduction = [0.5 0.5]; % reduction factors of step width

% step_min = [0.001 0.05]; % minimum step width

% step_min = [0.0005 0.025]; % minimum step width

% step_min = [0.0005 0.01]; % minimum step width

step_min = [0.0005 0.005]; % minimum step width

Samps = 1; % Uncertainty margin (+-Samps) within +-10 Samples around gpb.config.fTXLO

n_max = 50; % Maxim iterations for individual Mag/Phase search

M = 3; % number of gradient loop for coefficient set

LO_Threshold = 20;

disp(['LO target: ',num2str(LO_Threshold)]);

LO_Index = TXLOind+[-Samps:Samps]; %fixed LO index(ces); Relying

% on max to find the LO in low LO powers might return a noise index (in case LO is already

% compensated). Ideally Samps should be 0, set 1 for allowing some uncertainty;

Polars = [Polars; 1 0];

99

Page 116: Outphasing RF Power Ampli ers for Mobile Communication

P_LO = [P_LO P0_LO];

if (P0_LO < LO_Threshold)

disp(['LO below noise level of ',num2str(LO_Threshold)]);

LO_Suppression = 0;

close(gcf);

return;

elseif (P0_LO < LO_Threshold + 10)

step = [0.02 0.05]; % initial step width

elseif (P0_LO < LO_Threshold + 20)

step = [0.2 0.5]; % initial step width

elseif (P0_LO < LO_Threshold + 30)

step = [0.5 2]; % initial step width

else

step = [1 4]; % initial step width

end

j = 1;

% gradient method

for m=1:M

for coeff = [1 2]

n=1;

slope_change = 0;

% optimise coefficients

for n=1:n_max;

j = j+1;

polars(coeff) = polars(coeff)+step(coeff);

Polars(j,:) = polars;

eval(ProgDACsCommand);

disp('Plotting SA...')

pause(0.5)

y_tilde = zeros(N,1);

GAIA_RAM = gpb.fetchSignals(N,cap_mode,'SYNC',data_mode);

y_tilde = y_tilde + GAIA_RAM.RxB2;

clear GAIA_RAM;

ampdb(y_tilde(1:2:end), gpb.config.fTXDACNCO*1e-6);

LinePlots = get(gca, 'Children');

set(LinePlots,'Color',TraceC,'LineWidth',LW);

writeVideo(vidObj, getframe(gcf));

h=get(gca, 'children');

% f=get(h, 'XData');

dB=get(h, 'YData');

P_LO(j) = max(dB(LO_Index));

[P_LO.' Polars]

if(P_LO(j)>P_LO(j-1))

step(coeff) = step(coeff)*-step_reduction(coeff);

if (abs(step(coeff)) < abs(step_min(coeff)))

D Code Samples

100

Page 117: Outphasing RF Power Ampli ers for Mobile Communication

step(coeff) = sign(step(coeff))*abs(step_min(coeff));

end

slope_change = slope_change+1;

end

if(slope_change > 2)

[~,ind_min]=min(P_LO);

polars = Polars(ind_min,:);

% polars=Polars(j-1,:);

% step(coeff) = -step(coeff);

% if j>10

% [~,ind_min]=min(P_LO(end-4:end));

% polars = Polars(end-4+ind_min-1,:);

% end

break;

end

if (P_LO(j) < (LO_Threshold-5))

disp(['LO below ',num2str(LO_Threshold-5)]);

if I == 1

DAC1 = DAC1*polars(1)*exp(1i*pi/180*polars(2));

elseif I == 2

DAC2 = DAC2*polars(1)*exp(1i*pi/180*polars(2));

end

LO_Suppression = P_LO(1) - P_LO(j);

% close(gcf)

close(vidObj);

return;

end

end

end

end

[P_LO_min,ind_min]=min(P_LO);

if (ind_min ~= length(P_LO))

j = j+1;

P_LO(j) = P_LO_min;

polars = Polars(ind_min,:);

Polars(j,:) = polars;

end

if I == 1

DAC1 = DAC1*polars(1)*exp(1i*pi/180*polars(2));

elseif I == 2

DAC2 = DAC2*polars(1)*exp(1i*pi/180*polars(2));

end

AD9122_LO_feedthrough_compensation(gpb,DAC1,DAC2);

pause(1)

y_tilde = zeros(N,1);

GAIA_RAM = gpb.fetchSignals(N,cap_mode,'SYNC',data_mode);

y_tilde = y_tilde + GAIA_RAM.RxB2;

101

Page 118: Outphasing RF Power Ampli ers for Mobile Communication

clear GAIA_RAM;

ampdb(y_tilde(1:2:end), gpb.config.fTXDACNCO*1e-6);

LinePlots = get(gca, 'Children');

set(LinePlots,'Color',TraceC,'LineWidth',LW);

writeVideo(vidObj, getframe(gcf));

h=get(gca, 'children');

dB=get(h, 'YData');

P_LO(j) = max(dB(LO_Index));

[P_LO.' Polars]

%

LO_Suppression = P_LO(1) - P_LO(end);

% close(gcf)

close(vidObj);

end

D Code Samples

102

Page 119: Outphasing RF Power Ampli ers for Mobile Communication

Abbreviations

ACLR Adjacent Channel Leakage power Ratio

ADS Advanced Design System

AM Amplitude Modulated

AMO Asymmetric Multilevel Outphasing

BFM Baliga’s Figure-of-Merit

BTS Base Transceiver Station

BW Bandwidth

CAD Computer Aided Design

CDF Cumulative Distribution Function

DPD Digital Predistortion

DUT Device Under Test

EVM Error Vector Magnitude

ET Envelope Tracking

GaAs Gallium Arsenide

GaN Gallium Nitride

HEMT High Electron Mobility Transistor

IAMO Input Amplitude Modulated Outphasing

JFM Johnson’s Figure-of-Merit

LINC Linear Amplification with Nonlinear Components

103

Page 120: Outphasing RF Power Ampli ers for Mobile Communication

Abbreviations

LO Local Oscillator

LP Load-Pull

LS Large Signal

LUT Look-Up Table

MQAM Multiquadrature Amplitude Modulation

NA Network Analyzer

PA Power Amplifier

PAR Peak-to-Average power Ratio

PBO Power Back-Off

PDF Probability Density Function

PM Phase Modulated

RCA Radio Corporation of America

SA Spectrum Analyzer

SCS Signal Component Separator

Si Silicon

W-CDMA Wideband-Code Division Multiple Access

104

Page 121: Outphasing RF Power Ampli ers for Mobile Communication

List of Figures

1.1 Global mobile data [6]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.2 High-end devices multiply traffic [6]. . . . . . . . . . . . . . . . . . . . . . 2

2.1 Outphasing PA architecture. . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.2 Outphasing with Wilkinson combiner. . . . . . . . . . . . . . . . . . . . . . 7

2.3 Efficiency assessment circuit schematic. . . . . . . . . . . . . . . . . . . . . 11

2.4 Wilkinson’s η assessment: V1 50 V, θ1 70 and θ2 30 . . . . . . . . . 11

2.5 Outphasing with Chireix combiner. . . . . . . . . . . . . . . . . . . . . . . 15

2.6 Uncompensated (left) vs. compensated Chireix combiner impedances loci. . 16

2.7 Impedance loci sets for different θc and ZL settings. The arrows indicate

orientations of increasing (left) θc and (right) ZL, respectively from 10 to

30 in 5 steps for ZL 50 Ω, and from 10 Ω to 50 Ω in 10 Ω steps for

θc 15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2.8 Modulated (a) real and (b) imaginary parts of the compensated Chireix

impedance Z1 for different compensation angle settings; ZL 50 Ω. . . . . 17

2.9 Modulated (a) real and (b) imaginary parts of the compensated Chireix

impedance Z1 for different ZL settings; θc 15 . . . . . . . . . . . . . . . . 17

2.10 Outphasing efficiencies assuming ideal class-B PA blocks. . . . . . . . . . . 18

3.1 A 1986 VW Golf GTI fuel consumption [15, 16]. . . . . . . . . . . . . . . . 20

3.2 (a) A realized class-E GaN HEMT (b) measured at 2170 MHz. . . . . . . . 20

3.3 A classification of some PA architectures. . . . . . . . . . . . . . . . . . . . 21

3.4 Turbocharged engine [22]. . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

3.5 (a) Outphasing with energy recovery using (b) a bridge rectifier. . . . . . . 22

3.6 Outphasing with energy recovery assuming ideal class-B PA blocks. . . . . 23

3.7 Asymmetric Outphasing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

3.8 Optimal two levels (V0 50 V). . . . . . . . . . . . . . . . . . . . . . . . . 26

3.9 2-Level AMO average efficiency assuming ideal class-B PA blocks. . . . . . 26

3.10 LS simulations showing (a) PAE curves that correspond to different input

power levels while having θ swept for each and (b) emerging loci sets. . . . 27

105

Page 122: Outphasing RF Power Ampli ers for Mobile Communication

List of Figures

3.11 A 7.5 dB PAR W-CDMA (a) IQ constellation and (b) distribution. . . . . 28

4.1 Voltage applied to the grid controls plate (anode) current [41]. . . . . . . . 31

4.2 (a) 2 31.5 W Chireix’s maximum power capability vs. the design param-

eter θc and (b) the generic defined degradation factor κ. . . . . . . . . . . . 34

4.3 Packaged GaN HEMT simplified small-signal equivalent circuit model. . . . 36

4.4 Y representation of the intrinsic HEMT in (a) ON and (b) OFF states. . . 36

4.5 Cout stemming from simplified circuit analysis for the harmonically shorted

case (a) as a function of time and (b) as a function of variable capacitor

(or drain) voltage for the parameters given in Table 4.2. . . . . . . . . . . . 40

4.6 Parametric Cout’s DC and fundamental components for the simplified har-

monically shorted case (a) with respect to VDC and (b) with respect to V0

with the fixed parameter values as given in Table 4.2. . . . . . . . . . . . . 41

4.7 Extracted (dotted) and fitted (colored surface) CGH27030F’s Cout. . . . . . 41

4.8 (a) Real time fitted Cout for different V0 values and (b) its spectral compo-

nents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

4.9 Cout’s first three spectral components as a function of the parameter V0. . . 43

4.10 Cout’s fundamental component for the nonharmonic design case. . . . . . . 43

4.11 IAMO PAE LS simulations with (a) θc 15 and (b) θc 30 designs. . . 44

4.12 (a) Blocks inserted between the Chireix ideal current sources and Chireix

combiner and (b) transformed loci at die’s plane. . . . . . . . . . . . . . . 45

4.13 (a) Calculated and (b) measured (normalized) bandwidth expansion of the

individual outphased signals from a 5 MHz W-CDMA signal. . . . . . . . . 46

4.14 (a) Calculated and (b) measured (normalized) bandwidth expansion of the

individual outphased signals from a 20 MHz W-CDMA signal. . . . . . . . 47

4.15 (a) Instantaneous frequency shift for the individual outphased signals from

a 5 MHz W-CDMA signal and (b) its zoomed view. . . . . . . . . . . . . . 47

4.16 Preserved outphased data as a function of the PA cores’ supported BW. . . 48

4.17 Outphased signals BW truncation virtual test setup. . . . . . . . . . . . . 49

4.18 Example of the outphasing signal corresponding to a 20 MHz 2-Carrier W-

CDMA input, truncated in MATLAB to (a) 15 MHz and (b) 100 MHz. . . 50

4.19 EVM of s1Filtered with reference to s1 as a function of the bandpass filter’s

BW for three W-CDMA input signal configurations. . . . . . . . . . . . . . 50

4.20 (a) EVM of sL with reference to s as a function of the bandpass filter’s BW

for three W-CDMA input signal configurations and (b) its zoomed view. . 50

4.21 The PAR for s1Filtered as a function of the bandpass filter BW. . . . . . . . 52

5.1 Path 1 of the practical Chireix combiner for the harmonic case. . . . . . . 56

106

Page 123: Outphasing RF Power Ampli ers for Mobile Communication

List of Figures

5.2 Package plane impedance loci on the Smith-chart at the fundamental (left)

and 2nd harmonic (right renormalized to 5 Ω) for a nonharmonic Chireix

combiner with θc 15 as a function of θ. The index i in Gammai corre-

sponds to the device index, 1 being the device with the leading outphased

signal. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57

5.3 Package plane impedance loci on the Smith-chart at the fundamental (left)

and 2nd harmonic (right) for a harmonic Chireix combiner with θc 15

as a function of θ. The index i in Gammai corresponds to the device index,

1 being the device with the leading outphased signal. . . . . . . . . . . . . 57

5.4 (a) Simulated Chireix PA PAE and (b) 2nd harmonic drain voltage magni-

tude using LS models (θc 15 ). . . . . . . . . . . . . . . . . . . . . . . . 58

5.5 Layout of the Chireix PA with harmonic combiner. . . . . . . . . . . . . . 59

5.6 (a) Driver stage circuitry built for separate testing and (b) realized Chireix

PA with harmonic combiner on a 15 12 cm2 board. . . . . . . . . . . . . 59

6.1 Basic outphasing measurements setup. . . . . . . . . . . . . . . . . . . . . 62

6.2 (a) Digital setup block diagram and (b) photo. . . . . . . . . . . . . . . . . 62

6.3 (a) Losses (b) and delay imbalances relative to path 1. . . . . . . . . . . . 63

6.4 (a) Driver module and (b) small-signal gains. . . . . . . . . . . . . . . . . . 64

6.5 (a) The used switch and (b) its calibration setup. . . . . . . . . . . . . . . 64

6.6 (a) 3 dB combiner and (b) outphasing measurement test. . . . . . . . . . . 65

6.7 (a) Synchronized pulsed signals and (b) a zoomed view. . . . . . . . . . . . 65

6.8 (a) Spectrum seen without and (b) with LO suppression around 2.3 GHz. . 66

6.9 Harmonic Chireix outphasing at 2.14 GHz. . . . . . . . . . . . . . . . . . . 67

6.10 Measured efficiency at different PBO levels vs frequency. . . . . . . . . . . 67

6.11 Measured efficiency for several drain supply voltages (RF 2.12 GHz and

P in 35 dBm). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67

6.12 (a) Measured outphasing dynamic range as θ is swept and (b) corresponding

efficiency. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68

6.13 Amplified signal’s spectrum One carrier. . . . . . . . . . . . . . . . . . . 69

6.14 Amplified signal’s spectrum Two carrier. . . . . . . . . . . . . . . . . . . 69

7.1 Simulated effect of a dedicated 2nd harmonic termination at the input sides

of the Chireix PA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72

7.2 Simulated effect of smaller compensation angles Chireix designs. . . . . . . 72

7.3 Chireix architecture LP: ZL is varied from 15 Ω to 30 Ω in steps of 1 Ω and

Lcomp varied according to assumed Couts between 1.7 pF and 3.7 pF in steps

of 0.1 pF. The x-axis corresponds to Pout (dBm) and the y-axis to PAE (%). 73

107

Page 124: Outphasing RF Power Ampli ers for Mobile Communication

List of Figures

7.4 Chireix architecture LP: ZL is varied from 20 Ω to 25 Ω in steps of 0.5 Ω

and Lcomp varied according to assumed Couts between 2.9 pF and 3.5 pF in

steps of 0.1 pF. The x-axis corresponds to Pout (dBm) and the y-axis to

PAE (%). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

7.5 Mixed-mode outphasing angle functions. . . . . . . . . . . . . . . . . . . . 75

7.6 Summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77

A.1 Transmission Line. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81

B.1 (a) PDFs and (b) CDFs corresponding to different Rayleigh distribution

modes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83

108

Page 125: Outphasing RF Power Ampli ers for Mobile Communication

List of Tables

3.1 Outphasing variants comparison with a 7.5 dB PAR W-CDMA signal. . . . 29

4.1 Material properties comparison [42, 43]. . . . . . . . . . . . . . . . . . . . . 32

4.2 Parameters reflecting an exemplary 30 W GaN transistor. . . . . . . . . . . 40

4.3 Empirical Cout constants in (4.20) for the CGH27030F HEMT. . . . . . . . 42

4.4 Design parameters using the CGH27030F HEMT. . . . . . . . . . . . . . . 42

4.5 Peaks distances comparison for two different designs. . . . . . . . . . . . . 45

6.1 Chireix PA measurement results. . . . . . . . . . . . . . . . . . . . . . . . 69

109

Page 126: Outphasing RF Power Ampli ers for Mobile Communication

110

Page 127: Outphasing RF Power Ampli ers for Mobile Communication

Bibliography

[1] M. Lazarus, “The great spectrum famine,” Spectrum, IEEE, vol. 47, no. 10, pp.

26–31, Oct. 2010. 1

[2] G. Fischer, “Next-generation base station radio frequency architecture,” Bell

Labs Technical Journal, vol. 12, no. 2, pp. 3–18, 2007. [Online]. Available:

http://dx.doi.org/10.1002/bltj.20233 1

[3] N. Sokal, “RF power amplifiers, classes A through S-how they operate, and when

to use each,” in Electronics Industries Forum of New England, 1997. Professional

Program Proceedings, May 1997, pp. 179–252. 1, 3.2

[4] F. Raab, P. Asbeck, S. Cripps, P. Kenington, Z. Popovic, N. Pothecary, J. Sevic, and

N. Sokal, “Power amplifiers and transmitters for RF and microwave,” Microwave

Theory and Techniques, IEEE Transactions on, vol. 50, no. 3, pp. 814–826, Mar

2002. 1, 1.1

[5] A. Birafane, M. El-Asmar, A. Kouki, M. Helaoui, and F. Ghannouchi, “Analyzing

LINC systems,” Microwave Magazine, IEEE, vol. 11, no. 5, pp. 59–71, Aug. 2010. 1

[6] Cisco, “Visual networking index: Global mobile data traffic,” [Online]. Available:

http://www.cisco.com. 1.1, 1.2, D

[7] H. Chireix, “Apparatus for radiocommunication,” U.S. Patent 1 946 308, Feb 6, 1934.

1.1

[8] H. Chireix, “High power outphasing modulation,” Radio Engineers, Proceedings of

the Institute of, vol. 23, no. 11, pp. 1370–1392, 1935. 1.1, 2, 4

[9] A. M. Miller and J. Novic, “Principles of operation of the ampliphase

transmitter,” Broadcast News, vol. 104, June 1959. [Online]. Available: http:

//www.americanradiohistory.com/Archive-RCA-Broadcast-News/RCA-104.pdf 1.1

[10] D. Cox and R. Leck, “A VHF implementation of a LINC amplifier,” Communications,

IEEE Transactions on, vol. 24, no. 9, pp. 1018–1022, 1976. 1.1

111

Page 128: Outphasing RF Power Ampli ers for Mobile Communication

Bibliography

[11] D. Cox, “Linear amplification with nonlinear components,” Communications, IEEE

Transactions on, vol. 22, no. 12, pp. 1942–1945, 1974. 1.1

[12] F. Raab, “Efficiency of outphasing RF power-amplifier systems,” Communications,

IEEE Transactions on, vol. 33, no. 10, pp. 1094–1099, 1985. 1.1, 2, 2.3.1

[13] S. Cripps, RF Power Amplifiers for Wireless Communications. Artech House, 2006.

1.1, 2.3.1, 3.6, 1, 7.1.3

[14] S. Chung, P. Godoy, T. Barton, D. Perreault, and J. Dawson, “Asymmetric multilevel

outphasing transmitter using class-E PAs with discrete pulse width modulation,” in

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, May 2010,

pp. 264–267. 2.2.2

[15] H. Jason, “Mpg vs speed for a 1986 Golf GTI,” [Online]. Available: http:

//opensourceecology.org/wiki/File:Mpg vs speed for a 1986 golf gti.gif, June 2012,

accessed: 12-May-2014. 3.1, D

[16] “Diagram of a manual gear layout (5-speed),” [Online]. Available: http://

commons.wikimedia.org/wiki/File:Manual Layout.svg, February 2009, accessed: 12-

May-2014. 3.1, D

[17] N. Sokal and A. Sokal, “Class E - A new class of high-efficiency tuned single-ended

switching power amplifiers,” Solid-State Circuits, IEEE Journal of, vol. 10, no. 3,

pp. 168–176, Jun 1975. 3.1, 7.1.3

[18] W. H. Doherty, “A new high efficiency power amplifier for modulated waves,” Radio

Engineers, Proceedings of the Institute of, vol. 24, no. 9, pp. 1163–1182, Sept 1936.

3.1, 3.2

[19] J. Staudinger, G. Bouisse, and J. Kinney, “High efficiency 450W asymmetric three-

device Doherty amplifier with digital feedback predistortion,” in Radio and Wireless

Symposium (RWS), 2010 IEEE, Jan 2010, pp. 116–119. 3.1

[20] R. Langridge, T. Thornton, P. Asbeck, and L. Larson, “A power re-use technique for

improved efficiency of outphasing microwave power amplifiers,” Microwave Theory

and Techniques, IEEE Transactions on, vol. 47, no. 8, pp. 1467–1470, Aug. 1999.

3.3.1

[21] P. Godoy, D. Perreault, and J. Dawson, “Outphasing energy recovery amplifier with

resistance compression for improved efficiency,” Microwave Theory and Techniques,

IEEE Transactions on, vol. 57, no. 12, pp. 2895–2906, Dec 2009. 3.3.1

112

Page 129: Outphasing RF Power Ampli ers for Mobile Communication

Bibliography

[22] L. Ulrich and P. Wootton, “How it works: Two-in-one turbocharger,” [Online].

Available: http://www.popsci.com/content/two-one-turbocharger, accessed: 12-

May-2014. 3.4, D

[23] S. Chung, P. Godoy, T. Barton, E. Huang, D. Perreault, and J. Dawson, “Asym-

metric multilevel outphasing architecture for multi-standard transmitters,” in Radio

Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE, June 2009, pp.

237–240. 3.3.2

[24] Z. Abou-Chahine, T. Felgentreff, G. Fischer, and R. Weigel, “Efficiency analysis of

the asymmetric 2-level outphasing PA with Rayleigh enveloped signals,” in Power

Amplifiers for Wireless and Radio Applications (PAWR), 2012 IEEE Topical Con-

ference on, Jan 2012, pp. 85–88. 3.3.2

[25] C. Olivier and L. Martens, “Theoretical derivation of the stochastic behavior of a

WCDMA signal measured with a spectrum analyzer,” Instrumentation and Measure-

ment, IEEE Transactions on, vol. 55, no. 2, pp. 603–614, Apr. 2006. 3.3.2, 3.5

[26] P. Godoy, S. Chung, T. Barton, D. Perreault, and J. Dawson, “A 2.5-GHz asymmetric

multilevel outphasing power amplifier in 65-nm CMOS,” in Power Amplifiers for

Wireless and Radio Applications (PAWR), 2011 IEEE Topical Conference on, Jan

2011, pp. 57–60. 3.3.2

[27] J. Guan, A. Aref, and R. Negra, “Impact of the number of levels on the performance

of multilevel LINC transmitters,” in Microwave Symposium Digest (IMS), 2013 IEEE

MTT-S International, June 2013, pp. 1–3. 3.3.2

[28] A. Aref, A. Askar, A. Nafe, M. Tarar, and R. Negra, “Efficient amplification of

signals with high PAPR using a novel multilevel LINC transmitter architecture,”

in Microwave Conference (EuMC), 2012 42nd European, Oct 2012, pp. 1035–1038.

3.3.3

[29] K.-Y. Jheng, Y.-C. Chen, and A.-Y. Wu, “Multilevel LINC system designs for power

efficiency enhancement of transmitters,” Selected Topics in Signal Processing, IEEE

Journal of, vol. 3, no. 3, pp. 523–532, 2009. 3.3.3

[30] M. Helaoui, S. Boumaiza, F. Ghannouchi, A. Kouki, and A. Ghazel, “A new mode-

multiplexing LINC architecture to boost the efficiency of WiMAX up-link transmit-

ters,” Microwave Theory and Techniques, IEEE Transactions on, vol. 55, no. 2, pp.

248–253, Feb 2007. 3.3.3

113

Page 130: Outphasing RF Power Ampli ers for Mobile Communication

Bibliography

[31] J. Qureshi, R. Liu, A. de Graauw, M. van der Heijden, J. Gajadharsing, and

L. de Vreede, “A highly efficient Chireix amplifier using adaptive power combin-

ing,” in Microwave Symposium Digest, 2008 IEEE MTT-S International, June 2008,

pp. 759–762. 3.4.1

[32] B. Almgren, “Dynamic load modulation,” M.Sc. Thesis, University of Gavle, Sweden,

October 2007. 3.4.1

[33] Z. Abou-Chahine and T. Felgentreff, “Input amplitude modulated outphasing power

amplifier with an unmatched combiner,” International Patent Application WO

2014/075 736 A1, May 22, 2014. 3.4.2, 4.4.2

[34] Z. Abou-Chahine, T. Felgentreff, G. Fischer, and R. Weigel, “An input ampli-

tude modulated harmonic outphasing PA,” in Mediterranean Microwave Symposium

(MMS), 2013 13th, Sept 2013, pp. 1–4. 3.4.2, 3.4.2, 4.4.2

[35] J. Sevic, “Statistical characterization of RF power amplifier efficiency for CDMA

wireless communication systems,” in Wireless Communications Conference, 1997.,

Proceedings, Aug 1997, pp. 110–113. 3.5

[36] J. Sevic and M. Steer, “On the significance of envelope peak-to-average ratio for

estimating the spectral regrowth of an RF/microwave power amplifier,” Microwave

Theory and Techniques, IEEE Transactions on, vol. 48, no. 6, pp. 1068–1071, Jun

2000. 3.5

[37] P. Lavrador, T. Cunha, P. Cabral, and J. Pedro, “The linearity-efficiency compro-

mise,” Microwave Magazine, IEEE, vol. 11, no. 5, pp. 44–58, Aug 2010. 3.6

[38] I. Hakala, D. Choi, L. Gharavi, N. Kajakine, J. Koskela, and R. Kaunisto, “A

2.14-GHz Chireix outphasing transmitter,” Microwave Theory and Techniques, IEEE

Transactions on, vol. 53, no. 6, pp. 2129–2138, June 2005. 3.6

[39] A. Huttunen and R. Kaunisto, “A 20-W Chireix outphasing transmitter for WCDMA

base stations,” Microwave Theory and Techniques, IEEE Transactions on, vol. 55,

no. 12, pp. 2709–2718, Dec 2007. 3.6

[40] J. Qureshi, M. Pelk, M. Marchetti, W. Neo, J. Gajadharsing, M. van der Heijden, and

L. C. N. De Vreede, “A 90-W peak power GaN outphasing amplifier with optimum

input signal conditioning,” Microwave Theory and Techniques, IEEE Transactions

on, vol. 57, no. 8, pp. 1925–1935, Aug 2009. 3.6, 6.2.2

114

Page 131: Outphasing RF Power Ampli ers for Mobile Communication

Bibliography

[41] Svjo, “Cutaway drawing showing the construction of a low power triode vac-

uum tube,” [Online]. Available: http://en.wikipedia.org/wiki/File:Triode-english-

text.svg, July 2013, accessed: 12-May-2014. 4.1, D

[42] R. Pengelly, S. Wood, J. Milligan, S. Sheppard, and W. Pribble, “A review of GaN

on SiC high electron-mobility power transistors and MMICs,” Microwave Theory and

Techniques, IEEE Transactions on, vol. 60, no. 6, pp. 1764–1783, June 2012. 4.1,

4.1, 4.4.2, D

[43] A. Katz and M. Franco, “GaN comes of age,” Microwave Magazine, IEEE, vol. 11,

no. 7, pp. S24–S34, Dec 2010. 4.1, 4.1, D

[44] E. Johnson, “Physical limitations on frequency and power parameters of transistors,”

in IRE International Convention Record, vol. 13, March 1965, pp. 27–34. 4.1

[45] B. J. Baliga, “Power semiconductor device figure of merit for high-frequency ap-

plications,” Electron Device Letters, IEEE, vol. 10, no. 10, pp. 455–457, Oct 1989.

4.1

[46] M. K. Achuthan and K. N. Bhat, Fundamentals of Semiconductor Devices. Tata

McGraw-Hill Education, 2007. 4.1

[47] Cree, “CGH27030F rev. 3.6,” [Online]. Available: http://www.cree.com/RF/

Products/28-V-Telecom/Packaged-Discrete-Transistors/CGH27030, April 2012, ac-

cessed: 28-April-2014. 4.2, 4.4.1, 5

[48] A. Jarndal, Mobile and Wireless Communications Network Layer and Circuit Level

Design. InTech, Jan 2010, ch. Large-Signal Modeling of GaN Devices for Designing

High Power Amplifiers of Next Generation Wireless Communication Systems.

[Online]. Available: http://www.intechopen.com/books/mobile-and-wireless-

communications-network-layer-and-circuit-level-design/large-signal-modeling-of-

gan-devices-for-designing-high-power-amplifiers-of-next-generation-wireless 4.3

[49] A. Jarndal and G. Kompa, “A new small-signal modeling approach applied to GaN

devices,” Microwave Theory and Techniques, IEEE Transactions on, vol. 53, no. 11,

pp. 3440–3448, Nov 2005. 4.3

[50] A. Jarndal, A. Markos, and G. Kompa, “Improved parameter extraction method for

GaN HEMT on Si substrate,” in Microwave Symposium Digest (MTT), 2010 IEEE

MTT-S International, 2010, pp. 1668–1671. 4.3, 4.4.1

115

Page 132: Outphasing RF Power Ampli ers for Mobile Communication

Bibliography

[51] D. Frickey, “Conversions between S, Z, Y, H, ABCD, and T parameters which are

valid for complex source and load impedances,” Microwave Theory and Techniques,

IEEE Transactions on, vol. 42, no. 2, pp. 205–211, Feb 1994. 4.3, 4.4

[52] G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, “A new method for determining

the FET small-signal equivalent circuit,” Microwave Theory and Techniques, IEEE

Transactions on, vol. 36, no. 7, pp. 1151–1159, Jul 1988. 4.3

[53] F. Raab, “Class-E, class-C, and class-F power amplifiers based upon a finite number

of harmonics,” Microwave Theory and Techniques, IEEE Transactions on, vol. 49,

no. 8, pp. 1462–1468, Aug 2001. 4.4

[54] J. C. Whitaker, The Electronics Handbook. CRC Press, 2005. 4.4

[55] “Wolfram Mathematica online integrator,” [Online]. Available: http:

//integrals.wolfram.com/index.jsp, accessed: 12-May-2014. 4.4.1

[56] J. Moon, J. Kim, and B. Kim, “Investigation of a class-J power amplifier with a

nonlinear Cout for optimized operation,” Microwave Theory and Techniques, IEEE

Transactions on, vol. 58, no. 11, pp. 2800–2811, Nov 2010. 4.4.1

[57] I. Angelov, H. Zirath, and N. Rosman, “A new empirical nonlinear model for HEMT

and MESFET devices,” Microwave Theory and Techniques, IEEE Transactions on,

vol. 40, no. 12, pp. 2258–2266, Dec 1992. 4.4.1

[58] SEDI, “EGN21C030MK rev. 1.2,” [Online]. Available: http://www.sedi.co.jp/pdf/

EGN21C030MK Edition1 2.pdf, March 2010, accessed: 22-May-2014. 4.4.2

[59] B. Boashash, “Estimating and interpreting the instantaneous frequency of a signal.

I. Fundamentals,” Proceedings of the IEEE, vol. 80, no. 4, pp. 520–538, Apr 1992.

4.5

[60] B. Boashash, “Estimating and interpreting the instantaneous frequency of a signal.

II. Algorithms and applications,” Proceedings of the IEEE, vol. 80, no. 4, pp. 540–568,

Apr 1992. 4.5

[61] H. W. Bode, Network Analysis and Feedback Amplifier Design. R. E. Krieger Pub.

Co, 1975. 4.5.1

[62] “3GPP TS 11.21: Base Station System (BSS) equipment specification; Radio as-

pects,” [Online]. Available: http://www.3gpp.org/dynareport/1121.htm, June 2009,

accessed: 05-September-2015. 4.5.2

116

Page 133: Outphasing RF Power Ampli ers for Mobile Communication

Bibliography

[63] “3GPP TS 25.104: Base Station (BS) radio transmission and reception (FDD),” [On-

line]. Available: http://www.3gpp.org/DynaReport/25104.htm, Jan 2015, accessed:

05-September-2015. 4.5.2

[64] “3GPP TS 25.105: Base Station (BS) radio transmission and reception (TDD),” [On-

line]. Available: http://www.3gpp.org/DynaReport/25105.htm, Jan 2015, accessed:

05-September-2015. 4.5.2

[65] “IEEE 802.11: Wireless LANs,” [Online]. Available: http://standards.ieee.org/

about/get/802/802.11.html, 2012, accessed: 05-September-2015. 4.5.2

[66] “EVM measurement,” [Online]. Available: http://de.mathworks.com/help/comm/

ref/evmmeasurement.html, accessed: 05-September-2015. 4.5.2

[67] D. Parveg, P. Singerl, A. Wiesbauer, H. Nemati, and C. Fager, “A broadband, effi-

cient, overdriven class-J RF power amplifier for burst mode operation,” in Microwave

Conference (EuMC), 2010 European, Sept 2010, pp. 1666–1669. 4.5.3, 7.1.3

[68] P. Russer, Electromagnetics, Microwave Circuit and Antenna Design for Communi-

cations Engineering. Artech House, 2006. 5.2

[69] RFMD, “RFPA2026 3-stage power amplifier module,” [Online]. Available: http:

//www.rfmd.com/CS/Documents/RFPA2026DS.pdf, 2012, accessed: 22-May-2014.

5.3, 6.1.3

[70] RogersCorp, “RO4000r series,” [Online]. Available: http://www.rogerscorp.com/

documents/726/acm/RO4000-Laminates---Data-sheet.pdf, 2013, accessed: 22-May-

2014. 5.3

[71] R. Beltran, F. Raab, and A. Velazquez, “HF outphasing transmitter using class-E

power amplifiers,” in Microwave Symposium Digest, 2009. MTT ’09. IEEE MTT-S

International, 2009, pp. 757–760. 5.3

[72] Z. Wang and C.-W. Park, “Novel wideband GaN HEMT power amplifier using mi-

crostrip radial stub to suppress harmonics,” in Microwave Symposium Digest (MTT),

2012 IEEE MTT-S International, June 2012, pp. 1–3. 5.3

[73] R. Hou, M. Spirito, J. Gajadharsing, and L. de Vreede, “Non-intrusive characteriza-

tion of active device interactions in high-efficiency power amplifiers,” in Microwave

Symposium Digest (IMS), 2013 IEEE MTT-S International, June 2013, pp. 1–3. 6

[74] Mini-Circuitsr, “High isolation switch,” [Online]. Available: http://217.34.103.131/

pdfs/ZASWA-2-50DR.pdf, Jan 2012, accessed: 22-May-2014. 6.1.3

117

Page 134: Outphasing RF Power Ampli ers for Mobile Communication

Bibliography

[75] C. Musolff, M. Kamper, Z. Abou-Chahine, and G. Fischer, “Linear and efficient

Doherty PA revisited,” Microwave Magazine, IEEE, vol. 15, no. 1, pp. 73–79, Jan

2014. 6.2.1

[76] K. Bumman, M. Junghwan, and K. Ildu, “Efficiently amplified,” Microwave Maga-

zine, IEEE, vol. 11, no. 5, pp. 87–100, 2010. 6.2.1

[77] S. Gao, P. Butterworth, S. Ooi, and A. Sambell, “High-efficiency power amplifier

design including input harmonic termination,” Microwave and Wireless Components

Letters, IEEE, vol. 16, no. 2, pp. 81–83, Feb 2006. 7.1.1

[78] D. Calvillo-Cortes, M. van der Heijden, M. Acar, M. de Langen, R. Wesson, F. van

Rijs, and L. de Vreede, “A package-integrated Chireix outphasing RF switch-mode

high-power amplifier,” Microwave Theory and Techniques, IEEE Transactions on,

vol. 61, no. 10, pp. 3721–3732, Oct 2013. 7.1.1

[79] F. Ghannouchi and M. Hashmi, “Load-pull techniques and their applications in power

amplifiers design (invited),” in Bipolar/BiCMOS Circuits and Technology Meeting

(BCTM), 2011 IEEE, Oct 2011, pp. 133–137. 7.1.2

[80] S. Patro, Y. Buch, and R. Kishore, “Effective use of ceramic capacitor tuning sticks

for impedance matching,” High Frequency Electronics, vol. 6, no. 9, pp. 20–26, Sep

2007. 7.1.2

[81] “Selecting the calibration type,” [Online]. Available: http://edocs.soco.agilent.com/

display/ads2011/SelectingtheCalibrationType, accessed: 25-May-2014. 7.1.3

[82] R. K. Joshi and A. Harish, “Characteristics of a rotated butterfly radial stub,” in

Microwave Symposium Digest, 2006. IEEE MTT-S International, June 2006, pp.

1165–1168. 7.1.3

[83] F. Ghannouchi and O. Hammi, “Behavioral modeling and predistortion,” Microwave

Magazine, IEEE, vol. 10, no. 7, pp. 52–64, Dec 2009. 7.1.3

[84] M. Helaoui and F. Ghannouchi, “Linearization of power amplifiers using the reverse

MM-LINC technique,” Circuits and Systems II: Express Briefs, IEEE Transactions

on, vol. 57, no. 1, pp. 6–10, Jan 2010. 7.1.3

[85] F. Ulaby, Electromagnetics for Engineers. Pearson, 2005. A

[86] A. Papoulis and S. U. Pillai, Probability, Random Variables, and Stochastic Processes.

Mcgraw-Hill Publ.Comp., 2002. B

118

Page 135: Outphasing RF Power Ampli ers for Mobile Communication

Authored and Co-Authored Publications

[1] Z. Abou-Chahine, T. Felgentreff, G. Fischer, and R. Weigel, “An input ampli-

tude modulated harmonic outphasing PA,” in Mediterranean Microwave Symposium

(MMS), 2013 13th, Sept 2013, pp. 1–4. Best student paper award.

[2] Z. Abou-Chahine, T. Felgentreff, G. Fischer, and R. Weigel, “Efficiency analysis of

the asymmetric 2-level outphasing PA with Rayleigh enveloped signals,” in Power

Amplifiers for Wireless and Radio Applications (PAWR), 2012 IEEE Topical Con-

ference on, Jan 2012, pp. 85–88. Best student paper award.

[3] C. Musolff, M. Kamper, Z. Abou-Chahine, and G. Fischer, “Linear and efficient

Doherty PA revisited,” Microwave Magazine, IEEE, vol. 15, no. 1, pp. 73–79, Jan

2014. Winning design of the MTT’s high efficiency PA student contest.

[4] C. Musolff, M. Kamper, Z. Abou-Chahine, and G. Fischer, “A linear and efficient

Doherty PA at 3.5 GHz,” Microwave Magazine, IEEE, vol. 14, no. 1, pp. 95–101,

Jan 2013. Winning design of the MTT’s high efficiency PA student contest.

Patent Submission

[1] Z. Abou-Chahine and T. Felgentreff, “Input amplitude modulated outphasing with an

unmatched combiner,” International Patent Application WO 2014/075736 A1, May

22, 2014.

119