Micro- & Nano-technologies pour applications ...ursi-france.telecom-paristech.fr/fileadmin/...C N F R S – N a n o s c i e n c e s e t r a d i o é l e c t r i c i t é – 2 0 m

Research & Technology

Micro- & Nano-technologies pour applications hyperfréquenceà Thales Research &Technology

Afshin Ziaei, Sébastien Demoustier, Eric Minoux

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Outline

Application hyperfréquence à THALES:Antenne à réseau réflecteur

Micro-technologies: RF MEMS à THALES Research & Technology Micro-commutateur capacitifZrO2-MEMS switchZrO2-MEMS SPDTPower Handling and Life-time of PZT RF MEMS

Nano-technologies for RF applicationsNano-commutateursNano-antennes

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Reflect Array Antenna

top surfaceof the plane

Sourceand/or

Receiver

θ1θ2

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THALES Reflect Array Antenna

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THALES Reflect Array Antenna

Metallic GridEpoxy radome

Multilayers electronic board

ϕ

Driv

ers

...

ϕ

Driv

ers

ϕ

Driv

ers

MIRABEL (1998)MIRABEL (1998)

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Elementary phase shifter

RF-DC decoupling capacitances

PIN-diodes

Wave-guide flange

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MEMS for Power Switching

SEM picture

Si micro-machined, metal membrane Electrostatic actuationCapacitive switch using high K dielectric material for high Con/Coff ratio (~150) Series or shunt switch designs

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MEMS technology used : ‘ Surface micro-machining ’

TiW / Al 0.7 µmAu 3.6 µm

Si HR or glass Si HR or glass substratesubstrate

Si3N4 0.2 µm

TiW/Au 0.6 µm

SiO2 2 µm

Control electrode (TiW)

Au CPW lineW = 80 µmS = 120 µm

Schematic Schematic of cross section of cross section (Shunt Switch)

Holes are etched into the membrane in order to facilitate the membrane ‘ delivery ’

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Control pad

GND GNDSGN

100 µm

120 µm

80 µm

120 µm

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SEM pictures of fabricated switches

gap

membrane

Ground

Ground

signal RF in signal RF out

membranecommand electrode

Gap : g = 3 µmMembrane width : 100 µm

Dielectric thickness : g0 = 0.2 µm

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Insertion losses (Membrane in up position)

-0,35

-0,3

-0,25

-0,2

-0,15

-0,1

-0,05

00 5 10 15 20 25 30 35 40

F (GHz)

Perte

s A(

dB)

(20 GHz):S12 : -0.15 dB(40 GHz):S12 : -0.2 dB

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Isolation (Membrane in down position)

25 dB à 40 GHz

-35

-30

-25

-20

-15

-10

-5

00 5 10 15 20 25 30 35 40

Isol

atio

n (d

B)

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Return losses

S11 Membrane in up position (The membrane is unactuated )

-45

-40

-35

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-15

-10

-5

0

0 5 10 15 20 25 30 35 40

(20 GHz):S11 : 13 dB

(40 GHz):S11 : 10 dB S11

-40-35-30-25-20-15-10-50

0 5 10 15 20 25 30 35 40

S11 Membrane in down position(The membrane is actuated)

(20 GHz):S11 : 3 dB

(40 GHz):S11 : 1 dB0-40 GHz measurements

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Thales results

Results under 0dBm

Isolation 32 dB (40 GHz) – 18 dB (20 GHz)

Insertion losses 0.2 dB (40 GHz) – 0.1 dB (20 GHz)

Driving voltage 32-38 V

Con 2-3 pF

Coff 30-40 fF

Ron < 2 Ohms

Switching time < 5 µs

K 81 N/m

Mechanical resonance 214 kHz

Key characteristics of TRT MEMS RF Switch

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Series MEMS switches

ConceptionConception

120

120

120

80

V1V1 V2

plan de masse

plan de masse

Line of command

ON state : Membrane in down position

OFF state : Membrane in up position

109=off

on

CC

High resistivityresistors

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How do we improve switch performance?

Signal

Bridge ormembrane

Rf-On state (membrane Up)

GroundGround

Dielectric

Rf-Off state (membrane Down)

Increasing switching ratio (off

on

CC

)

Increasing Cdown for a given Cup

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Influence of K on switch isolation

-65-60-55-50-45-40-35-30-25-20-15-10-50

0 5 10 15 20 25 30 35 40

710202550708090100130160200250

Simulations HFSSSimulations HFSS

f(GHz)

Isolation (dB)

Much higher isolation in DOWN state than previous designReplace Si3N4 with high dielectric constant ZrO2 film

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SEM pictures of fabricated ZrO2 capacitive switch

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Switch measured characteristics: Insertion loss

Shunt ZrO2switch characteristics in the UP state

-0,35

-0,3

-0,25

-0,2

-0,15

-0,1

-0,05

0

0 2 4 6 8 10 12 14 16 18 20

fréquence (GHz)

pete

s d'

inse

rtio

n

Diélectrique ZrO2 (Er = 22)

Frequency (GHz)

Inse

rtio

n lo

ss (d

B)

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Switch measured characteristics: Return loss

Shunt ZrO2switch characteristics in the UP state

-60

-50

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-30

-20

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0

0 2 4 6 8 10 12 14 16 18 20

fréquence (GHz)

adap

tatio

n


Frequency (GHz)

Ret

urn

loss

(dB

)

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Switch measured characteristics: Isolation

Shunt ZrO2switch characteristics in the DOWN state

-60

-50

-40

-30

-20

-10

0

0 2 4 6 8 10 12 14 16 18 20

fréquence (GHz)

isol

atio

n


Frequency (GHz)

Isol

atio

n (d

B)

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Switch measured characteristics: Return loss

Shunt ZrO2switch characteristics in the DOWN state

-1

-0,9

-0,8

-0,7

-0,6

-0,5

-0,4

-0,3

-0,2

-0,1

0

0 2 4 6 8 10 12 14 16 18 20

fréquence (GHz)

refle

xion


Frequency (GHz)

Ret

urn

loss

(dB

)

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MEMS SPDT Switch (ZrO2) Signal IN

Signal OUT1

Coplanar Waveguide

Signal OUT2

25

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MEMS SPDT Switch (ZrO2)

Signal IN 1

Signal OUT 2On Off

Signal OUT 3

THALES design,Serial-serial PZT-PZT

26

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MEMS SPDT Switch (ZrO2) without packaging (X band)

-2

-1,8

-1,6

-1,4

-1,2

-1

-0,8

-0,6

-0,4

-0,2

0

0 2 4 6 8 10 12 14 16 18 20

Fréquence (GHz)

Mag

nitu

de (d

B)

Frequency (GHz)

-30

-25

-20

-15

-10

-5

0

0 2 4 6 8 10 12 14 16 18 20

Fréquence (GHz)

Mag

nitu

de (d

B)

Frequency (GHz)

Membrane down position (S13 in the on state)

S33 in the on state (Membrane down position)

S13

S33

1

3 2

27

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2



-70

-60

-50

-40

-30

-20

-10

0

0 5 10 15 20

Fréquence (GHz)

Mag

nitu

de (d

B)

S12

Frequency (GHz)

-0,14

-0,12

-0,1

-0,08

-0,06

-0,04

-0,02

0

0 2 4 6 8 10 12 14 16 18 20

Fréquence (GHz)

Mag

nitu

de (d

B)

S22

Frequency (GHz)

Membrane up position (in the off state)

S22 in the off state (Membrane up position)

1

3 2

28

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2



-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 2 4 6 8 10 12 14 16 18 20

Fréquence (GHz)

Mag

nitu

de (d

B) S23

Frequency (GHz)

-25

-20

-15

-10

-5

0

0 2 4 6 8 10 12 14 16 18 20

Fréquence (GHz)

Mag

nitu

de (d

B)

S11

Frequency (GHz)

Membrane up position (in the off state)

1

3 2

29

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


Power handling measurements (10 GHz)

Power Handling of RF MEMS Capacitive shunt switches

TWT-Amplifier10-12 GHzSynthesizer

Attenuator(1)

RFProbe

RFProbe

DUT

NetworkAnalyser

Attenuator(2)

DC Bias Tee

SpectrumAnalyser

Attenuator(4) Attenuator(3)

DC Powersupply

Directional Coupler

30

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


Power Handling of RF MEMS Capacitive shunt switch

PZT Shunt capacitive switch ISOLATION 30 dB (10GHz) PERTES INSERTION 0.1dB (10GHz) TENSION D’ACTIVATION 25~30Volts RAPPORT Con/Coff 150

GAP D’AIR (entre membrane et diélectrique) 2~2.5µm MEMBRANE 240µm x 100µm

Cpw 80µm/120µm/80µm METALLISATION DE LA MEMBRANE 0.5 µm Al, 0.2µm TiW

CONSTANTE DIELECTRIQUE UTILISEE (PZT) 160~170

VSWR 1.2

Switching time 4 µs

under 0dBm (10 GHz)

31

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2



Measured down-state isolation versus input power at 10GHz

-32

-30

-28

-26

-24

-22

0 5 10 15 20 25 30 35 40 45

Power In (dBm)

Isol

atio

n (

dB)

32

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2



Measured up-state Insertion Loss versus input power at 10GHz

-0,25

-0,2

-0,15

-0,1

-0,05

0

0 5 10 15 20 25 30 35 40 45

Power In (dBm)

Inse

rtio

n L

oss

(d

B)

33

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


Lifetime measurements (10 GHz)

High power RF lifetime of THALES MEMS switch at 10GHz

TWT-Amplifier

10-12 GHzSynthesizer

Attenuator(1)

RFProbe

RFProbe

DUTNetworkAnalyser Attenuator(2)

DC Bias Tee

SpectrumAnalyser Attenuator(4) Attenuator(3)

DC Powersupply

Directional Coupler

PC-Labview

Power Meter

34

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


RF lifetime of THALES MEMS switch at 10GHz

-0,22

-0,21

-0,2

-0,19

-0,18

-0,17

-0,16

-0,15

-0,14

-0,13

-0,12

-0,11

-0,1

-0,09

-0,08

-0,07

-0,06

1,00E+00 1,00E+01 1,00E+02 1,00E+03 1,00E+04 1,00E+05 1,00E+06 1,00E+07 1,00E+08 1,00E+09 1,00E+10

Cycles

Inse

rtio

n L

oss

(dB

)

Cold switching (37 dBm)Measured up-state Insertion Loss versus input power at 10GHz

35

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2



-38,5

-38

-37,5

-37

-36,5

-36

-35,5

-35

-34,5

-34

-33,5

1,00E+00 1,00E+01 1,00E+02 1,00E+03 1,00E+04 1,00E+05 1,00E+06 1,00E+07 1,00E+08 1,00E+09 1,00E+10

Cycles

Isol

atio

n (

dB)

Cold switching (37 dBm)Measured down-state isolation versus input power at 10GHz

36

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2



RF Lifetime at 10 GHz10 Billion Cycles at 37 dBm

32 Devices Tested at 36 dBm and Room Temp.

25 Devices Completed 10 Billion Cycles (Stopped Test)

6 Devices Completed 1 Billion Cycles (Stopped Test)

1 Device Failed at 0.72 Billion Cycles

8 KHz Cycle Rate

0.69 Billion Cycles/Day

10 Billion Cycles in 15 Days

37

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


CNs switch

J. E. Jang et al., Appl. Phys. Lett. 87, 163114 (2005)“Nanoelectromechanical switches with vertically aligned carbon nanotubes”

Department of engineering, University of Cambridge

38

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


CNs switch

39

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


NEMS @ TRT

Why carbon nanotube based NEMS?

• High isolation, low losses → from MEMS properties

• Low actuation voltage → < 10 V• High switching speed → ~ a few ns

• High power handling → exceptional electrical and mechnical properties of CNs

• High integration density• Low cost• Low consumption

From nanometer size of CNs

Main difficulty• Achieving reproducible and routinely fabrication process of CN switches

40

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


NEMS @ TRT

TRT has developed a growth technology of highly homogeneous

vertical CNs

41

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


NEMS @ TRT

++++++++++++

------------

Ohmic switch(metal/metal contact)

++++++++++++

------------

Capacitive switch(metal/dielectric/metal contact)

42

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


NEMS @ TRT

Coupling CNs with coplanar waveguides for RF switching

43

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


CN Antennas

0

λ/4

-λ/4

CurrentDistribution

I0

DipoleLength

Dipole

Generator

RadiatedField

Advantages of CN antennas:• High integration• High density circuits• High frequency resonnators

Particular electrical properties:• High characteristic impedance & high losses• High relaxation frequency (>50GHz) • High wave velocity (λ/50 - λ/100)

Applications of CN antennas:• Wireless communications between nano-sized devices/organisms and macroscopic world• Antenna arrays at high frequencies• Thales: 60-110 GHz

44

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


CN Antennas

Technical issues:

• Dipole fabrication: FIB

• Impedance matching: 50Ω - 10kΩ

• Emission pattern measurements:Radiation efficiency – 60 dB

45

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


Conclusion

Conclusion

• Key RF performance characteristics for a Zro2-SPDT switch are at 10 Ghz: insertion loss of 0.15 dB and isolation of 28 dB .

• RF lifetimes exceeding 1010 cycles achieved at input Power level of 36 dBm

• Research on nanotubes RF NEMS is underway at Thales Research & Technology

46

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


Thank you for your attention

47

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


-2

-1,8

-1,6

-1,4

-1,2

-1

-0,8

-0,6

-0,4

-0,2

0

0 2 4 6 8 10 12 14 16 18 20

Freq GHz

dB S12 pzt

Bare chip Characteristics: Insertion lossesMembrane in up position

48

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


0.04-20 GHz measurements

-30

-25

-20

-15

-10

-5

0

0 5 10 15 20

Freq GHz

dB S11 pzt

Return losses

49

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


-80

-70

-60

-50

-40

-30

-20

-10

0

0 5 10 15 20

Freq GHz

dB S12 pzt

Bare chip Characteristics: Isolation (0.4-40 GHz)Membrane in down position

50

CN

FRS

–N

anos

cien

c es

et ra

dioé

lect

r icité

–20

mar

s 20

0 7

This

doc

umen

t and

any

dat

a in

clud

ed a

re th

e pr

oper

ty o

f Tha

les.

The

y ca

nnot

be

repr

oduc

ed, d

iscl

osed

or u

sed

with

out T

hale

s' p

rior w

ritte

n ap

prov

al.

©TH

ALES

200

5. T

empl

ate

trtc

oen

vers

ion

1.0

.2


0.04-20 GHz measurements

-0,25

-0,2

-0,15

-0,1

-0,05

0

0 5 10 15 20

Freq GHz

dB S11 pzt

Return losses

Documents

Micro- & Nano-technologies pour applications ...ursi-france.telecom-paristech.fr/fileadmin/...C N F R S – N a n o s c i e n c e s e t r a d i o é l e c t r i c i t é – 2 0 m