Research & Technology
Micro- & Nano-technologies pour applications hyperfréquenceà Thales Research &Technology
Afshin Ziaei, Sébastien Demoustier, Eric Minoux
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Outline
Application hyperfréquence à THALES:Antenne à réseau réflecteur
Micro-technologies: RF MEMS à THALES Research & Technology Micro-commutateur capacitifZrO2-MEMS switchZrO2-MEMS SPDTPower Handling and Life-time of PZT RF MEMS
Nano-technologies for RF applicationsNano-commutateursNano-antennes
2
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Reflect Array Antenna
top surfaceof the plane
Sourceand/or
Receiver
θ1θ2
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THALES Reflect Array Antenna
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THALES Reflect Array Antenna
Metallic GridEpoxy radome
Multilayers electronic board
ϕ
Driv
ers
...
ϕ
Driv
ers
ϕ
Driv
ers
MIRABEL (1998)MIRABEL (1998)
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Elementary phase shifter
RF-DC decoupling capacitances
PIN-diodes
Wave-guide flange
6
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MEMS for Power Switching
SEM picture
Si micro-machined, metal membrane Electrostatic actuationCapacitive switch using high K dielectric material for high Con/Coff ratio (~150) Series or shunt switch designs
7
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MEMS for Power Switching
MEMS technology used : ‘ Surface micro-machining ’
TiW / Al 0.7 µmAu 3.6 µm
Si HR or glass Si HR or glass substratesubstrate
Si3N4 0.2 µm
TiW/Au 0.6 µm
SiO2 2 µm
Control electrode (TiW)
Au CPW lineW = 80 µmS = 120 µm
Schematic Schematic of cross section of cross section (Shunt Switch)
Holes are etched into the membrane in order to facilitate the membrane ‘ delivery ’
8
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MEMS for Power Switching
Control pad
GND GNDSGN
100 µm
120 µm
80 µm
120 µm
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SEM pictures of fabricated switches
gap
membrane
Ground
Ground
signal RF in signal RF out
membranecommand electrode
Gap : g = 3 µmMembrane width : 100 µm
Dielectric thickness : g0 = 0.2 µm
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SEM pictures of fabricated switches
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Insertion losses (Membrane in up position)
-0,35
-0,3
-0,25
-0,2
-0,15
-0,1
-0,05
00 5 10 15 20 25 30 35 40
F (GHz)
Perte
s A(
dB)
(20 GHz):S12 : -0.15 dB(40 GHz):S12 : -0.2 dB
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Isolation (Membrane in down position)
25 dB à 40 GHz
-35
-30
-25
-20
-15
-10
-5
00 5 10 15 20 25 30 35 40
Isol
atio
n (d
B)
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Return losses
S11 Membrane in up position (The membrane is unactuated )
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0 5 10 15 20 25 30 35 40
(20 GHz):S11 : 13 dB
(40 GHz):S11 : 10 dB S11
-40-35-30-25-20-15-10-50
0 5 10 15 20 25 30 35 40
S11 Membrane in down position(The membrane is actuated)
(20 GHz):S11 : 3 dB
(40 GHz):S11 : 1 dB0-40 GHz measurements
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Thales results
Results under 0dBm
Isolation 32 dB (40 GHz) – 18 dB (20 GHz)
Insertion losses 0.2 dB (40 GHz) – 0.1 dB (20 GHz)
Driving voltage 32-38 V
Con 2-3 pF
Coff 30-40 fF
Ron < 2 Ohms
Switching time < 5 µs
K 81 N/m
Mechanical resonance 214 kHz
Key characteristics of TRT MEMS RF Switch
15
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Series MEMS switches
ConceptionConception
120
120
120
80
V1V1 V2
plan de masse
plan de masse
Line of command
ON state : Membrane in down position
OFF state : Membrane in up position
109=off
on
CC
High resistivityresistors
16
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SEM pictures of fabricated switches
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How do we improve switch performance?
Signal
Bridge ormembrane
Rf-On state (membrane Up)
GroundGround
Dielectric
Rf-Off state (membrane Down)
Increasing switching ratio (off
on
CC
)
Increasing Cdown for a given Cup
18
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Influence of K on switch isolation
-65-60-55-50-45-40-35-30-25-20-15-10-50
0 5 10 15 20 25 30 35 40
710202550708090100130160200250
Simulations HFSSSimulations HFSS
f(GHz)
Isolation (dB)
Much higher isolation in DOWN state than previous designReplace Si3N4 with high dielectric constant ZrO2 film
19
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SEM pictures of fabricated ZrO2 capacitive switch
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Switch measured characteristics: Insertion loss
Shunt ZrO2switch characteristics in the UP state
-0,35
-0,3
-0,25
-0,2
-0,15
-0,1
-0,05
0
0 2 4 6 8 10 12 14 16 18 20
fréquence (GHz)
pete
s d'
inse
rtio
n
Diélectrique ZrO2 (Er = 22)
Frequency (GHz)
Inse
rtio
n lo
ss (d
B)
21
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Switch measured characteristics: Return loss
Shunt ZrO2switch characteristics in the UP state
-60
-50
-40
-30
-20
-10
0
0 2 4 6 8 10 12 14 16 18 20
fréquence (GHz)
adap
tatio
n
Diélectrique ZrO2 (Er = 22)
Frequency (GHz)
Ret
urn
loss
(dB
)
22
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Switch measured characteristics: Isolation
Shunt ZrO2switch characteristics in the DOWN state
-60
-50
-40
-30
-20
-10
0
0 2 4 6 8 10 12 14 16 18 20
fréquence (GHz)
isol
atio
n
Diélectrique ZrO2 (Er = 22)
Frequency (GHz)
Isol
atio
n (d
B)
23
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Switch measured characteristics: Return loss
Shunt ZrO2switch characteristics in the DOWN state
-1
-0,9
-0,8
-0,7
-0,6
-0,5
-0,4
-0,3
-0,2
-0,1
0
0 2 4 6 8 10 12 14 16 18 20
fréquence (GHz)
refle
xion
Diélectrique ZrO2 (Er = 22)
Frequency (GHz)
Ret
urn
loss
(dB
)
24
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MEMS SPDT Switch (ZrO2) Signal IN
Signal OUT1
Coplanar Waveguide
Signal OUT2
25
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MEMS SPDT Switch (ZrO2)
Signal IN 1
Signal OUT 2On Off
Signal OUT 3
THALES design,Serial-serial PZT-PZT
26
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MEMS SPDT Switch (ZrO2) without packaging (X band)
-2
-1,8
-1,6
-1,4
-1,2
-1
-0,8
-0,6
-0,4
-0,2
0
0 2 4 6 8 10 12 14 16 18 20
Fréquence (GHz)
Mag
nitu
de (d
B)
Frequency (GHz)
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20
Fréquence (GHz)
Mag
nitu
de (d
B)
Frequency (GHz)
Membrane down position (S13 in the on state)
S33 in the on state (Membrane down position)
S13
S33
1
3 2
27
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
.2
Research & Technology
MEMS SPDT Switch (ZrO2) without packaging (X band)
-70
-60
-50
-40
-30
-20
-10
0
0 5 10 15 20
Fréquence (GHz)
Mag
nitu
de (d
B)
S12
Frequency (GHz)
-0,14
-0,12
-0,1
-0,08
-0,06
-0,04
-0,02
0
0 2 4 6 8 10 12 14 16 18 20
Fréquence (GHz)
Mag
nitu
de (d
B)
S22
Frequency (GHz)
Membrane up position (in the off state)
S22 in the off state (Membrane up position)
1
3 2
28
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
.2
Research & Technology
MEMS SPDT Switch (ZrO2) without packaging (X band)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0 2 4 6 8 10 12 14 16 18 20
Fréquence (GHz)
Mag
nitu
de (d
B) S23
Frequency (GHz)
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20
Fréquence (GHz)
Mag
nitu
de (d
B)
S11
Frequency (GHz)
Membrane up position (in the off state)
1
3 2
29
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
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Research & Technology
Power handling measurements (10 GHz)
Power Handling of RF MEMS Capacitive shunt switches
TWT-Amplifier10-12 GHzSynthesizer
Attenuator(1)
RFProbe
RFProbe
DUT
NetworkAnalyser
Attenuator(2)
DC Bias Tee
SpectrumAnalyser
Attenuator(4) Attenuator(3)
DC Powersupply
Directional Coupler
30
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
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empl
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Research & Technology
Power Handling of RF MEMS Capacitive shunt switch
PZT Shunt capacitive switch ISOLATION 30 dB (10GHz) PERTES INSERTION 0.1dB (10GHz) TENSION D’ACTIVATION 25~30Volts RAPPORT Con/Coff 150
GAP D’AIR (entre membrane et diélectrique) 2~2.5µm MEMBRANE 240µm x 100µm
Cpw 80µm/120µm/80µm METALLISATION DE LA MEMBRANE 0.5 µm Al, 0.2µm TiW
CONSTANTE DIELECTRIQUE UTILISEE (PZT) 160~170
VSWR 1.2
Switching time 4 µs
under 0dBm (10 GHz)
31
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
.2
Research & Technology
Power Handling of RF MEMS Capacitive shunt switch
Measured down-state isolation versus input power at 10GHz
-32
-30
-28
-26
-24
-22
0 5 10 15 20 25 30 35 40 45
Power In (dBm)
Isol
atio
n (
dB)
32
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
.2
Research & Technology
Power Handling of RF MEMS Capacitive shunt switch
Measured up-state Insertion Loss versus input power at 10GHz
-0,25
-0,2
-0,15
-0,1
-0,05
0
0 5 10 15 20 25 30 35 40 45
Power In (dBm)
Inse
rtio
n L
oss
(d
B)
33
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
.2
Research & Technology
Lifetime measurements (10 GHz)
High power RF lifetime of THALES MEMS switch at 10GHz
TWT-Amplifier
10-12 GHzSynthesizer
Attenuator(1)
RFProbe
RFProbe
DUTNetworkAnalyser Attenuator(2)
DC Bias Tee
SpectrumAnalyser Attenuator(4) Attenuator(3)
DC Powersupply
Directional Coupler
PC-Labview
Power Meter
34
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
.2
Research & Technology
RF lifetime of THALES MEMS switch at 10GHz
-0,22
-0,21
-0,2
-0,19
-0,18
-0,17
-0,16
-0,15
-0,14
-0,13
-0,12
-0,11
-0,1
-0,09
-0,08
-0,07
-0,06
1,00E+00 1,00E+01 1,00E+02 1,00E+03 1,00E+04 1,00E+05 1,00E+06 1,00E+07 1,00E+08 1,00E+09 1,00E+10
Cycles
Inse
rtio
n L
oss
(dB
)
Cold switching (37 dBm)Measured up-state Insertion Loss versus input power at 10GHz
35
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
.2
Research & Technology
RF lifetime of THALES MEMS switch at 10GHz
-38,5
-38
-37,5
-37
-36,5
-36
-35,5
-35
-34,5
-34
-33,5
1,00E+00 1,00E+01 1,00E+02 1,00E+03 1,00E+04 1,00E+05 1,00E+06 1,00E+07 1,00E+08 1,00E+09 1,00E+10
Cycles
Isol
atio
n (
dB)
Cold switching (37 dBm)Measured down-state isolation versus input power at 10GHz
36
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
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Research & Technology
RF lifetime of THALES MEMS switch at 10GHz
RF Lifetime at 10 GHz10 Billion Cycles at 37 dBm
32 Devices Tested at 36 dBm and Room Temp.
25 Devices Completed 10 Billion Cycles (Stopped Test)
6 Devices Completed 1 Billion Cycles (Stopped Test)
1 Device Failed at 0.72 Billion Cycles
8 KHz Cycle Rate
0.69 Billion Cycles/Day
10 Billion Cycles in 15 Days
37
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
.2
Research & Technology
CNs switch
J. E. Jang et al., Appl. Phys. Lett. 87, 163114 (2005)“Nanoelectromechanical switches with vertically aligned carbon nanotubes”
Department of engineering, University of Cambridge
38
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
.2
Research & Technology
CNs switch
39
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
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Research & Technology
NEMS @ TRT
Why carbon nanotube based NEMS?
• High isolation, low losses → from MEMS properties
• Low actuation voltage → < 10 V• High switching speed → ~ a few ns
• High power handling → exceptional electrical and mechnical properties of CNs
• High integration density• Low cost• Low consumption
From nanometer size of CNs
Main difficulty• Achieving reproducible and routinely fabrication process of CN switches
40
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
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Research & Technology
NEMS @ TRT
TRT has developed a growth technology of highly homogeneous
vertical CNs
41
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
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Research & Technology
NEMS @ TRT
++++++++++++
------------
Ohmic switch(metal/metal contact)
++++++++++++
------------
Capacitive switch(metal/dielectric/metal contact)
42
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
.2
Research & Technology
NEMS @ TRT
Coupling CNs with coplanar waveguides for RF switching
43
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
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vers
ion
1.0
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Research & Technology
CN Antennas
0
λ/4
-λ/4
CurrentDistribution
I0
DipoleLength
Dipole
Generator
RadiatedField
Advantages of CN antennas:• High integration• High density circuits• High frequency resonnators
Particular electrical properties:• High characteristic impedance & high losses• High relaxation frequency (>50GHz) • High wave velocity (λ/50 - λ/100)
Applications of CN antennas:• Wireless communications between nano-sized devices/organisms and macroscopic world• Antenna arrays at high frequencies• Thales: 60-110 GHz
44
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
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oen
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ion
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Research & Technology
CN Antennas
Technical issues:
• Dipole fabrication: FIB
• Impedance matching: 50Ω - 10kΩ
• Emission pattern measurements:Radiation efficiency – 60 dB
45
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
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ion
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Research & Technology
Conclusion
Conclusion
• Key RF performance characteristics for a Zro2-SPDT switch are at 10 Ghz: insertion loss of 0.15 dB and isolation of 28 dB .
• RF lifetimes exceeding 1010 cycles achieved at input Power level of 36 dBm
• Research on nanotubes RF NEMS is underway at Thales Research & Technology
46
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
.2
Research & Technology
Thank you for your attention
47
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
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ate
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ion
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Research & Technology
-2
-1,8
-1,6
-1,4
-1,2
-1
-0,8
-0,6
-0,4
-0,2
0
0 2 4 6 8 10 12 14 16 18 20
Freq GHz
dB S12 pzt
Bare chip Characteristics: Insertion lossesMembrane in up position
48
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
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ion
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Research & Technology
0.04-20 GHz measurements
-30
-25
-20
-15
-10
-5
0
0 5 10 15 20
Freq GHz
dB S11 pzt
Return losses
49
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
n ap
prov
al.
©TH
ALES
200
5. T
empl
ate
trtc
oen
vers
ion
1.0
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Research & Technology
-80
-70
-60
-50
-40
-30
-20
-10
0
0 5 10 15 20
Freq GHz
dB S12 pzt
Bare chip Characteristics: Isolation (0.4-40 GHz)Membrane in down position
50
CN
FRS
–N
anos
cien
c es
et ra
dioé
lect
r icité
–20
mar
s 20
0 7
This
doc
umen
t and
any
dat
a in
clud
ed a
re th
e pr
oper
ty o
f Tha
les.
The
y ca
nnot
be
repr
oduc
ed, d
iscl
osed
or u
sed
with
out T
hale
s' p
rior w
ritte
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Research & Technology
0.04-20 GHz measurements
-0,25
-0,2
-0,15
-0,1
-0,05
0
0 5 10 15 20
Freq GHz
dB S11 pzt
Return losses