MeMO - CNEA - GIyA "Laboratorio Tandar"levy/MeMO/2011ACTIVIDADES_2011_MeMOSAT.pdf(SIMULATORS: Rozenberg, ... "Reversible Resistive Switching in ... PROOF OF PRINCIPLE Logic Material

MeMO

Memory Mechanisms in Oxides

AnalogicMemoryArtificialNeurons (AMAN)

MeMO -> MeMOLogic <-MemoryAggresiveEnvironmets (MAGEN)

MeMOSatAhoRRAM

-60 -40 -20 0 20 40 600.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

IN, O

UT:

V (V

)

t (S)

-2

-1

0

1

2

3

4

5

6

VC

Q3:

V (V

)

“Analog memory devices”

120000 cycles

GomezMarlasca et al., APL 98, 123502 (2011).

“Asymmetric pulsing for reliableoperation of titanium/manganite memristors”

GomezMarlasca et al., APL.98, 042901(2011)

“Understanding Electroformingin Bipolar Resistive Switching Oxides”

Dispositivos con Memoria No VolDispositivos con Memoria No Voláátil til ReRAMReRAM = = ResistiveResistive RAM /2011RAM /2011

@GIA-CAC: Levy, Stoliar, Rubí, GMarlasca, Ghenzi, Leyva, Albornoz.@utside: Rozenberg (UBA), Sánchez(CAB).

1) usando 1) usando manganitasmanganitas policristalinaspolicristalinas

1) usando 1) usando manganitasmanganitas policristalinas / policristalinas / BiFeOBiFeODispositivos con Memoria No VolDispositivos con Memoria No Voláátil til ReRAMReRAM = = ResistiveResistive RAM /2011RAM /2011

@GIA-CAC: Levy, Stoliar, Rubí, GMarlasca, Ghenzi.@utside: Rozenberg (UBA), Sánchez(CAB).

Optimization of resistive switchingperformance of metal-manganite oxide interfaces by a multipulse protocolGhenzi et al, submited (2012)

Electronic transport mechanismsin metal-manganite memristive

interfaces,F.GMarlasca et al, submited (2012)

Resistive Switching in Bi0.9Ca0.1FeO3,Rubí et al., submited (2012)

100 200

150

160

170

180

Res

ista

nce

(MΩ

)

Time (s)

-800

-600

-400

-200

0

200

(a)

Stimulus (V)

100 200 300 400

140

160

180

200

Res

ista

nce

(MΩ

)

Time (s)

-800

-600

-400

-200

0

200

Stimulus (V)

(b)

poly TiO2-x/ Sidip coating by GSolerIllia et al.

N.Ghenzi et al, Physica B (2011)

0.0 0.5 1.0

0.0

0.5

1.0

1.5

I [m

A]

V [V]

SET

reset

0 2 4 6 8 10 12 14 16 18-0.20.00.20.40.60.81.01.21.41.6

Vset Vreset

V [V

]

Cycle number

TiO2 by reactive sputtering @ INTI

Ag (hand paint)TiO2 (~90 nm)AuCrNSiSi

0 2000 4000 6000 80001

10

100

I_R

EM

@ 0

.1 V

(uA

) a

fter +

/- 10

V P

ulse

s# pulse

Ag-poly TiO2-x/ Si(dip coating)

Stoliar, Ghenzi et al.

+ litho @ salaLimpiaMEMS-CAC

TiO2 sputtering @MEMS-CAC+ ex-situ oxidation

-Ti 20 nm-TiO2 20 nm-Au 80 nm

2) usando 2) usando TiOTiO22


@GIA-CAC: Levy, Stoliar, Rubí, GMarlasca, Ghenzi, Quinteros, Palumbo@utside GQ: GSoler et al., @MEMS:Bonaparte et al., @INTI:Fraigi, Malatto, Mangano

...primera etapa de miniaturización...!

@GIA-CAC: Ghenzi, Rubí, Stoliar, Levy@INTI: Mangano, Malatto, Fraigi



14 dispositivos testeados, 14 con RS...!!!!

device#14, 500 cycles, RoomT

3) 3) usandousando cupratoscupratos policristalinospolicristalinos

“Dynamical behaviour of the resistiveswitching in ceramic YBCO/metalinterfaces”

“Retentivity of RRAM Devices Basedon Metal / YBCO Interfaces”,


A.Schulman and C.Acha, Proceedings MRS 2011C.Acha, J. Phys. D: Appl. Phys. 44 (2011) 345301

@Lab.BajasTemperaturas, DF, FCEN, UBA: Acha, Schulman,


10 nm-thick HfO2 layerPt

Pt

@CAC-GIA Stoliar, Marlasca, Levy@UNSAM N.Quintieri, P. Díaz Vélez, D.Quisbert@nanoGUNE, F.Golmar, Stoliar, Hueso

@CAC-GIA Palumbo@UABarcelona, E.Miranda@LETI, Grenoble: Ghibaudo, Jousseaume

5) 5) samplessamples @broad@broadHfOHfOHfOHfO

MgOMgO@CAC-GIA F.GMarlasca, P.Levy@IBM-Almaden, S.Parkin, JaeWoo Jeong

MeMOTrabajo experimental / instituciones

CONICE

T

LBT

FCEN- UBAMicroelectrónica

INTI

MicroLab

ECyT-UNSAM

LPEyM /

LID /MEMS

CAC-CNEA

MeMoLógica®

RXR(T,H)M(T,H)AFM

Mechanism Simulations Polycristals ThinFilms Electrodes

Downscaling and packaging: Proof of Concept PoC

PoP: PROOF OF PRINCIPLE LogicMaterial Impl

NeuralNetworkMeMO @ AGresive ENvironments

(( MAGEN ))

CHARACTERIZATION

MeMO

PRESENTADO A PICT BICENTENARIO: NO EVALUADO POR FALTA DE FIRMAS DE INVS….

Materiales: LPCMO, YBCO, TiO_1, TiO_2, TiO_3, LCMO, BiFeO, HfO

Instrumentación y procesamiento microfabricaciòn

NUEVAS IDEAS…

MeMOPerspectivas y Nuevos desafíos...

ResistiveSwitching…Type I: filamentary type ~nonpolar

~binary oxidesNiO2, TiO2, …………...

RS in TMO, A Sawa, Materials Today 11, 28 (2008)

Type II - interface type~bipolar…Resistive Switching

~“complex” oxides… SrTiO, SrZrO, … perovskites (CMR, HTcS)

RS in TMO, A Sawa, Materials Today 11, 28 (2008)

interface type ~bipolar

…area dependent…!

RS reviews: A Sawa, Materials Today 11, 28 (2008)

R.Waser, Adv. Mater. 21, 2632–2663 (2009)

La1-xCaxMnO3

PS

Room T and above

No influence of LT ordering…!

e- transport in ManganitesConduction through Double Exchange Mn+3 - O - Mn+4Mn-O-Mn bonds allow eg to move from Mn+3 to Mn+4

Mn-O bonds disrupted ⇒ R increases …!…role of vacancies…

La5/8-yPryCa3/8MnO3 polycristalline samples

Simultaneous electric and magnetic field induced non-volatile memory Quintero, Leyva and PL, APL86, 242102 (2005).

0.028 0.278 2.778 27.778

0.01

0.1

PLCMO (Pr=0.3) T=300 K

A B C D

VBD

(V)

Time (hours...!)

24.4 24.6 24.8 25.0 25.2 25.4 25.6 25.80.0

0.1

V10

2

Time (hours)

0.00

0.05

V10

3

1x10-4

2x10-4

2x10-4

PLCMO Pr=0.3 T=300 K i = 1mA

V10

1

high retention time

I I

A B C D

AD → pulses

AD → bias I

amplitude…

1 2 3 4 5 6 7 8 9 10 110

5

10

15

20

25

LP(03)CMO T = 300 K pulse time (2 ms, 2ms)20 pulses

EPIR

(%)

V (Volts)

1E-3

0.01

0.1

VA

C (V

)1000 2000 3000 4000 5000 6000 7000 8000 9000 10000

0.01

as

time (sec.)

VB

D(V

)0 50 100 150 200 250

0.00480.00510.0054

# pulses

~ 300 %

~ 10 %

0.00

0.05

0.10

VB

D

VA

C

accumulative..!!

http://www.tandar.cnea.gov.ar/doctorado/Tesis/Quintero.pdf

Ag/ poly La0.375Pr0.300 Ca0.325MnO3 at RoomT

Hysteresis

Switching

Loop

I-V standard curves“dynamic response”

Prot

ocol

Dyn

and

Rem

DA

TA

Ag / poly La0.375Pr0.300 Ca0.325MnO3

A B C D

- +

o--

A B C D

+ -

o--

O vacanciesdisrupt Double

Exchange transport

during the pulse...

AD → pulses

AD → bias I

HIGH r

low r

after the pulse...

Com

plem

enta

ry

NonVolatile...!

Mec

hani

sm

+

GomezMarlasca & PL, J. Phys.: Conf. Ser. 167, 012036 (2009)

Dynamic resistance ( I-V)

A B C D

+ -

o--

Single contact

Remnant resistance

Hysteresis

Switching

Loop

Note HUGE changes in Rdynwhile Rrem is ~ constant

FGM and PL, J. Phys.: Conf. Ser. 167, 012036 (2009)

…una foto del estado de producción en abril de 2010

---theoretical(SIMULATORS: Rozenberg, Sánchez

---experimental (EXPTLS: Levy, Quintero, GMarlasca

---experimental (EXPTLS: Acha,

---theo+exptl

H.Yi, T. Choi and Sang-Wook Cheong, Abstract: P37.00010 : "Reversible Resistive Switching in (La,Pr,Ca)MnO3; Cryogenic nonvolatile RAM", http://meetings.aps.org/Meeting/MAR10/Event/120506 ; APL(2010)

---theoretical(SIMULATORS: Rozenberg, Sánchez

---experimental (EXPTLS: Levy, Quintero, GMarlasca

---experimental (EXPTLS: Acha,

---theo+exptl

Phys.B(2011)

APL(2011)

Assymetric…APL(2011)

Multipulse….JAP(2012)

BiFeO…PhysB(2011)

MLC….to be submited…

MeMoLógica®

RXR(T,H)M(T,H)AFM





(( MAGEN ))

CHARACTERIZATION

MeMO

mayo2010

MeMO

MeMO

MeMoLógica®

RXR(T,H)M(T,H)AFM





(( MAGEN ))

CHARACTERIZATION

MeMO

MeMO MeMOMeMO

MeMO

MeMO

MeMO

MeMO

MeMO

MeMO

MeMO

MeMO

MeMO

MeMO

MeMO

DIC 2011

Documents

MeMO - CNEA - GIyA "Laboratorio Tandar"levy/MeMO/2011ACTIVIDADES_2011_MeMOSAT.pdf(SIMULATORS: Rozenberg, ... "Reversible Resistive Switching in ... PROOF OF PRINCIPLE Logic Material