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Lois: “Save me, Dr. HBT – from those evil HFETs.”. 36 Years. 36 Years. 550. 100. 1350. AlSb 1550. 200. 250. 150. InSb 220. 500. AlAs 2170. GaSb 770. 450. GaAsSb 720. GaAs 1420. InGaP 1900. InGaAs 760. InAlAs 1460. InP 1350. 200. InAs 360. 150. 780. 200. 170. - PowerPoint PPT Presentation
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Lois: “Save me, Dr. HBT – from those evil HFETs.”
36 Years
36 Years
InAs360
GaSb770
AlSb1550
GaAs1420
InGaAs760
InAlAs1460
InP1350
200
1350 200
500450
250
550
550
200
170
GaAsSb720
170
InSb220
150
AlAs2170
InGaP1900
780
150
100
Bandgap Heaven
Increasing electron Velocity
2000 Nobel Prize in Physics "for developing semiconductor heterostructures used in high-speed- and opto-electronics,"
2002 IEEE Medal of Honor "for contributions to high-frequency transistors, and hot-electron devices, especially heterostructure devices from heterostructure bipolar transistors to lasers, and their molecular beam epitaxy technology."
Honorary doctorates from the Technical University of Aachen (Germany; 1985), the University of Lund (Sweden; 1998), the University of Colorado (USA; 2001), and the University of Jena (Germany; 2008).
2001, Grand Cross of the Order of Merit of the Federal Republic of Germany, the highest award given by the German government.
He is a member of both the National Academy of Engineering and the National Academy of Sciences.
