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Copyright Mark Rodwell, 2016 Power Amplifiers: Class B Mark Rodwell, University of California, Santa Barbara ece145c lecture notes with Material copied from Prof. Buckwalter's 145c notes

Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

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Page 1: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Power Amplifiers:

Class B

Mark Rodwell, University of California, Santa Barbara

ece145c lecture notes

with Material copied from Prof. Buckwalter's 145c notes

Page 2: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Class-B Operation

•Drain current on for half the cycle

©James Buckwalter

iD

=i

pkcos w

ot( ) i

d> 0

0 id

£ 0

ì

íï

îï

vpk

= -iD

2Rcos w

RFt( )

P

RF=

vpk

2

2R£

VDD

2

2R

Note that the current is

half-wave rectified by

the voltage is a sine

wave!

Page 3: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Fourier Components for Half-Wave

•Even harmonics result from half wave current

©James Buckwalter

iD

=i

pkcos w

ot( ) i

d> 0

0 id

£ 0

ì

íï

îï

iD

f( ) =i

pk

p+

ipk

2sin 2p ft( ) -

2ipk

p

cos 4pkft( )4k 2 -1k³1

å

Page 4: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Consider the currents.

iD

f( ) =i

pk

p+

ipk

2sin 2p ft( ) -

2ipk

p

cos 4pkft( )4k 2 -1k³1

å

!)2/(2 :at current signalpeak -Peak

)2sin(*)2/( :frequency at current Signal

:torin transiscurrent ousinstantanePeak

pkpkpp

pk

pk

IIIf

ftIf

I

torin transiscurrent peak

frequency signalat

ppI

Page 5: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Class-B Loadline

©James Buckwalter

What does this say

about the possible

output power?

DDV

Page 6: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Harmonic Matching for Class-B

©James Buckwalter

• At fundamental, generate loadline match

• At higher harmonics, ZL = 0

DDV

Page 7: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Power Dissipation in Class A and Class B

©James Buckwalter

Page 8: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Class-B Efficiency

•The output power and DC power are

•Therefore, the maximum drain efficiency is

©James Buckwalter

h =P

RF

PDC

=

vPK

2

2RV

DDiPK

p

=p

2

vPK

2

RVDD

iPK

=p

4

vPK

VDD

®hMAX

= 78%

PRF

=1

2v

PKiPK

=1

2

vPK

2

R=

1

2R

iPK

2

æ

èçç

ö

ø÷÷

2

PDC

=VDD

IDC

=VDD

iPK

p

Page 9: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Class-A versus Class-B: Efficiency at Peak Output

•Comparing power of Class-A and B

•Comparing efficiency of Class-A and B

•What is the cost of class-B amplifier?

©James Buckwalter

PRF ,A

=V

DD

2

2RP

RF ,B=

VDD

2

2R

50% 78%A B

Page 10: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Class-B Loadline

©James Buckwalter

How do we match to this loadline?

Page 11: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Class-B Loadline

©James Buckwalter

• The piecewise loadline shown in the previous slides seems to suggest a loadline.

• However, we should consider the loadline based on the fundamental. Therefore, the voltage swing at the fundamental is (Vmax – Vmin )/2. The current swing is Imax/2.

• The loadline resistance is the same as class-A!

RL =Vmax -Vmin

Imax

Page 12: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Maximum Output Power for Class-B

• Again, this is the same as class-A output power

• So what is the penalty?

©James Buckwalter

PRF

=1

2v

RF ,MAXiRF ,MAX

PRF

=1

8V

MAX-V

MIN( ) IMAX

Page 13: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Efficiency vs output power: Class B

modified from J Buckwalter's 145c notes

41

414/)(/

efficiencyector Drain/coll

/

4/)(8/

: driven to *not*When

/)(22/)(but /)(

:)( conditionsoutput peak At

max,

ectordrain/coll

max

maxectordrain/coll

max

22

maxmaxmaxmax

DD

sat

out

out

DD

satpk

DDsatDDpkDCout

pkDDDC

satDDpkLoadppout

sat

satDDloadsatDDsatload

sat

V

V

P

P

V

V

I

IVIVVIPP

IVP

IVVIRIP

P

IVVRVVVIVVR

P

Page 14: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Efficiency vs output power: Class A

modified from J Buckwalter's 145c notes

2

11

2

112/)(/

efficiencyector Drain/coll

2/

4/)(8/

: driven to *not*When

/)(22/)(but /)(

:)( conditionsoutput peak At

max,

ectordrain/coll

2

max

2

max

2

ectordrain/coll

max

max

22

maxmaxmaxmax

DD

sat

out

out

DD

satpk

DDsatDDpkDCout

DDDCDDDC

satDDpkLoadppout

sat

satDDloadsatDDsatload

sat

V

V

P

P

V

V

I

IVIVVIPP

IVIVP

IVVIRIP

P

IVVRVVVIVVR

P

Page 15: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Efficiency vs. Power

©James Buckwalter

Very important! Note

that not only is the

peak power higher

the efficiency is

higher in backoff.

When the average

power is 3 dB lower

than the peak, what

is the efficiency for

class-A and class-

B?

Page 16: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Gain for Class-B

• Compared to the gain for Class-A amplifier the power gain of class-B is ¼ (or 6 dB) less.

• What is the implication of this? Lower PAE!

©James Buckwalter

P

RF=

ipk

2 R

8=

gmv

in( )2

8R

Page 17: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Gain

©James Buckwalter

Page 18: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Features of Class-B

©James Buckwalter

Page 19: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Class BDesign Example

Page 20: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Schematic

harmonics shorts ;at filter bandpassoutput :TL16 Note

network. tuningloadlineoutput Note

current smallat BJT bias mirror,Current .network bias base idealized theNote max

f

I

Page 21: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Design procedure

?) (howbandwidth over Stabilize ?). (howinput Match

network. tuningload real with load idealize replace ,determined With

loadline.correct for er) transform(inductor, load idealized Tune

loadline.output generate tosufficientpower input with Drive

???)mean matched"" does(what matched. *not*initially Input

A. class Similar to

,optLZ

Page 22: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Simulation results: Class B

Page 23: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Simulation results: Class B

?match input design the wedid how---But

Page 24: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Class B: how do we design the input match ?

? drive signal-largeunder measure wedo How

drive. signal-largeunder

fromgreatly differ willdrive signal-smallunder

off.almost isr transisto thedrive, RF zerounder :But

load. thefirst tunemust weso ,upon depends always, As

in

in

in

loadin

Z

Z

Z

ZZ

Page 25: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Class B: how do we design the input match ?

0signallarge

0signallarge

signallarge

1

signallargesignallarge

:tcoefficien reflectioninput signal large a Define

frequency at ofcomponent Fourier

frequency at ofcomponent Fourier

:admittanceinput signal large a Define

ZZ

ZZ

ZfV

fIY

in

in

in

in

in

inin

Page 26: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Class B: how do we design the input match ?

not work. does matching signal-small why is this; with varies that Note

match. Signal-Large a called is This

zero. to bring toadjusted isnetwork nginput tuni thechart,Smith on the displayed With

signallarge

signallargesignallarge

inin

inin

P

Page 27: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Class B: what about stabilization ?

.fat driven PA fmax with -DC fromZout Zin,negativefor Check

:do) tohard(but Practical

chaos. and dynamicsnonlinear :yMath/Theor Underlying

2GHz.at drive RF stronggiven 1.0GHzat unstable,y potentiall bemight circuit The

drive. RF nogiven 1.0GHzat example,for stable,nally unconditio bemight circuit The

amplitude. driveinput RF offunction a asgreatly change parameterscircuit The

:discussiondifficult a inherently is This

signal

Page 28: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Low distortion: transmitters or receivers ?

-150

-100

-50

0

50

100

-50 -25 0 25 50 75

Pou

t (d

Bm

)

Pin (dBm)

PDC

= 979 mW

f1,2

= 1.96, 1.98 GHz

OIP2 = 76.5 dBm

OIP3 = 52.4 dBm

IM3IM2

Linear

Receivers:very low IM3: jammer rejection→ very high IP3 @ low PDC.

http://www.mathworks.com/

Griffith, 2008 CSICSTransmitters:

IM3→ out-of-band power (ACPR).want low IM3 given output near Psat.

Inoue et al, SEI Technical Review, 2014 ·

Page 29: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Class AB or B ? Push-Pull or just Pull ?

Class AB or class B ? Pick bias point for smallest V3 term at crossover

Push-pull or just pull ? Push-pull & 2nd-harmonic short-circuit are equivalent.

Push-pull

2nd harmonicshort-circuit

V Paidi et al (UCSB)IEEE Trans MTTFeb. 2003

vs.

Page 30: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Linear W-band HBT class A, AB power amplifier100 GHz PA simulations10 mm HBT emitter finger (TSC 250nm InP HBT)cell within larger PA; power scales by # fingers.recall: 2-tone clipping point is 3dB below single-tone

Performance (simulated)class A: -43 dBc IM3 at hard amplifier clipping ; less below.class AB: -40dBc IM3, or better, below clipping point

-80

-70

-60

-50

-40

-30

-20

-10

0

0.2

0.4

0.6

0.8

1

-15 -10 -5 0 5 10 15

Class A: Simple vs. Emitter Degeneration

IM3

, d

Bc, (t

wo-t

one

in

put)

PA

E (o

ne

-ton

e in

pu

t)

Output power, dBm (single tone, or sum of two tones)

100GHz

250nm InP HBT

two-tone

clipping-80

-70

-60

-50

-40

-30

-20

-10

0

0.2

0.4

0.6

0.8

1

-15 -10 -5 0 5 10 15

Class AB: Simple vs. Emitter Degeneration

IM3

, d

Bc, (t

wo-t

one

in

put)

PA

E (o

ne

-ton

e in

pu

t)

Output power, dBm (single tone, or sum of two tones)

100GHz

250nm InP HBT

two-tone

clipping

Park et al, JSSC Oct. 2014

Page 31: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

Class B and linearity

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Page 32: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

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Page 33: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

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Page 34: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

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from J Buckwalter's 145c notes

Page 35: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

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from J Buckwalter's 145c notes

Page 36: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

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from J Buckwalter's 145c notes

Page 37: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

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from J Buckwalter's 145c notes

Page 38: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

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from J Buckwalter's 145c notes

Page 39: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

asdfasdf

from J Buckwalter's 145c notes

Page 40: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

asdfasdf

from J Buckwalter's 145c notes

Page 41: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

asdfasdf

from J Buckwalter's 145c notes

Page 42: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

asdfasdf

from J Buckwalter's 145c notes

Page 43: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

asdfasdf

from J Buckwalter's 145c notes

Page 44: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

asdfasdf

from J Buckwalter's 145c notes

Page 45: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

asdfasdf

from J Buckwalter's 145c notes

Page 46: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

asdfasdf

from J Buckwalter's 145c notes

Page 47: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

asdfasdf

from J Buckwalter's 145c notes

Page 48: Power Amplifiers: Class BLinear W-band HBT class A, AB power amplifier 100 GHz PA simulations 10 mm HBT emitter finger (TSC 250nm InP HBT) cell within larger PA; power scales by #

Copyright Mark Rodwell, 2016

asdfasdfadsf

asdfasdf

from J Buckwalter's 145c notes