High speed IGBT in Trench and Fieldstop technology · Time between short circuits: ≥ 1.0s Tvj = 150°C tSC 5 µs Power dissipation TC = 25°C Power dissipation TC = 100°C Ptot

IGBTHigh�speed�IGBT�in�Trench�and�Fieldstop�technology

IGW20N60H3600V�high�speed�switching�series�third�generation

Data�sheet

Industrial�Power�Control

2

IGW20N60H3High�speed�switching�series�third�generation

Rev.�2.2,��2014-03-11

High�speed�IGBT�in�Trench�and�Fieldstop�technology�Features:

TRENCHSTOPTM�technology�offering•�very�low�VCEsat•�low�EMI•�Very�soft,�fast�recovery�anti-parallel�diode•�maximum�junction�temperature�175°C•�qualified�according�to�JEDEC�for�target�applications•�Pb-free�lead�plating;�RoHS�compliant•�complete�product�spectrum�and�PSpice�Models:http://www.infineon.com/igbt/

Applications:

•�uninterruptible�power�supplies•�welding�converters•�converters�with�high�switching�frequency

G

C

E

GC

E

Key�Performance�and�Package�ParametersType VCE IC VCEsat,�Tvj=25°C Tvjmax Marking PackageIGW20N60H3 600V 20A 1.95V 175°C G20H603 PG-TO247-3

3


Rev.�2.2,��2014-03-11

Table�of�Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

4


Rev.�2.2,��2014-03-11

Maximum�ratings

Parameter Symbol Value UnitCollector-emitter�voltage,�Tvj�≥�25°C VCE 600 VDC�collector�current,�limited�by�TvjmaxTC�=�25°CTC�=�100°C

IC 40.020.0

A

Pulsed�collector�current,�tp�limited�by�Tvjmax ICpuls 80.0 ATurn off safe operating areaVCE�≤�600V,�Tvj�≤�175°C,�tp�=�1µs - 80.0 A

Gate-emitter voltage VGE ±20 VShort circuit withstand timeVGE�=�15.0V,�VCC�≤�400VAllowed number of short circuits < 1000Time between short circuits: ≥ 1.0sTvj�=�150°C

tSC

5

µs

Power�dissipation�TC�=�25°CPower�dissipation�TC�=�100°C Ptot

170.085.0 W

Operating junction temperature Tvj -40...+175 °CStorage temperature Tstg -55...+150 °CSoldering temperature,wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

Thermal�Resistance

Parameter Symbol Conditions Max.�Value UnitCharacteristic

IGBT thermal resistance,junction - case Rth(j-c) 0.88 K/W

Thermal resistancejunction - ambient Rth(j-a) 40 K/W

Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

Static�Characteristic

Collector-emitter breakdown voltage V(BR)CES VGE�=�0V,�IC�=�2.00mA 600 - - V

Collector-emitter saturation voltage VCEsat

VGE�=�15.0V,�IC�=�20.0ATvj�=�25°CTvj�=�125°CTvj�=�175°C

---

1.952.302.50

2.40--

V

Gate-emitter threshold voltage VGE(th) IC�=�0.29mA,�VCE�=�VGE 4.1 5.1 5.7 V

Zero gate voltage collector current ICESVCE�=�600V,�VGE�=�0VTvj�=�25°CTvj�=�175°C

--

--

40.01500.0

µA

Gate-emitter leakage current IGES VCE�=�0V,�VGE�=�20V - - 100 nATransconductance gfs VCE�=�20V,�IC�=�20.0A - 10.9 - S

5


Rev.�2.2,��2014-03-11

Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified

Valuemin. typ. max.


Dynamic�Characteristic

Input capacitance Cies - 1100 -Output capacitance Coes - 70 -Reverse transfer capacitance Cres - 32 -

VCE�=�25V,�VGE�=�0V,�f�=�1MHz pF

Gate charge QG VCC�=�480V,�IC�=�20.0A,VGE�=�15V - 120.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 13.0 - nH

Short circuit collector currentMax. 1000 short circuitsTime between short circuits: ≥ 1.0s

IC(SC)VGE�=�15.0V,�VCC�≤�400V,tSC�≤�5µsTvj�=�150°C

-120

- A

Switching�Characteristic,�Inductive�Load

Valuemin. typ. max.


IGBT�Characteristic,�at�Tvj�=�25°CTurn-on delay time td(on) - 17 - nsRise time tr - 23 - nsTurn-off delay time td(off) - 194 - nsFall time tf - 11 - nsTurn-on energy Eon - 0.56 - mJTurn-off energy Eoff - 0.24 - mJTotal switching energy Ets - 0.80 - mJ

Tvj�=�25°C,VCC�=�400V,�IC�=�20.0A,VGE�=�0.0/15.0V,rG�=�14.6Ω,�Lσ�=�75nH,Cσ�=�30pFLσ,�Cσ�from�Fig.�EEnergy losses include “tail” anddiode (IKW20N60H3) reverserecovery.

Switching�Characteristic,�Inductive�Load

Valuemin. typ. max.


IGBT�Characteristic,�at�Tvj�=�175°CTurn-on delay time td(on) - 16 - nsRise time tr - 21 - nsTurn-off delay time td(off) - 227 - nsFall time tf - 14 - nsTurn-on energy Eon - 0.71 - mJTurn-off energy Eoff - 0.36 - mJTotal switching energy Ets - 1.07 - mJ

Tvj�=�175°C,VCC�=�400V,�IC�=�20.0A,VGE�=�0.0/15.0V,rG�=�14.6Ω,�Lσ�=�75nH,Cσ�=�30pFLσ,�Cσ�from�Fig.�EEnergy losses include “tail” anddiode (IKW20N60H3) reverserecovery.

6


Rev.�2.2,��2014-03-11

Figure 1. Collector�current�as�a�function�of�switchingfrequency(Tj≤175°C,�D=0.5,�VCE=400V,�VGE=15/0V,rG=14,6Ω)

f,�SWITCHING�FREQUENCY�[kHz]

IC,�C

OLLECTO

R�CURRENT�[A]

1 10 100 10000

10

20

30

40

50

60

TC=80°

TC=110°

TC=80°

TC=110°

Figure 2. Forward�bias�safe�operating�area(D=0,�TC=25°C,�Tj≤175°C;�VGE=15V)

VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]

IC,�C

OLLECTO

R�CURRENT�[A]

1 10 100 10000.1

1

10

100

tp=1µs

10µs

50µs

100µs

200µs

500µs

DC

Figure 3. Power�dissipation�as�a�function�of�casetemperature(Tj≤175°C)

TC,�CASE�TEMPERATURE�[°C]

Ptot ,�POWER�DISSIPATION�[W

]

25 50 75 100 125 150 1750

20

40

60

80

100

120

140

160

180

Figure 4. Collector�current�as�a�function�of�casetemperature(VGE≥15V,�Tj≤175°C)

TC,�CASE�TEMPERATURE�[°C]

IC,�C

OLLECTO

R�CURRENT�[A]

25 50 75 100 125 150 1750

10

20

30

40

7


Rev.�2.2,��2014-03-11

Figure 5. Typical�output�characteristic(Tj=25°C)


IC,�C

OLLECTO

R�CURRENT�[A]

0 2 4 60

10

20

30

40

50

60

70

80

VGE=20V

17V

15V

13V

11V

9V

7V

5V

Figure 6. Typical�output�characteristic(Tj=175°C)


IC,�C

OLLECTO

R�CURRENT�[A]

0 2 4 6 80

10

20

30

40

50

60

70

80

VGE=20V

17V

15V

13V

11V

9V

7V

5V

Figure 7. Typical�transfer�characteristic(VCE=20V)

VGE,�GATE-EMITTER�VOLTAGE�[V]

IC,�C

OLLECTO

R�CURRENT�[A]

5 6 7 8 9 10 11 120

10

20

30

40

50

60

70Tj=25°CTj=175°C

Figure 8. Typical�collector-emitter�saturation�voltage�asa�function�of�junction�temperature(VGE=15V)

Tj,�JUNCTION�TEMPERATURE�[°C]

VCE(sat) ,�COLLECTO

R-EMITTE

R�SATU

RATION�[V

]

0 25 50 75 100 125 150 1751.0

1.5

2.0

2.5

3.0

3.5

4.0IC=10AIC=20AIC=40A

8


Rev.�2.2,��2014-03-11

Figure 9. Typical�switching�times�as�a�function�ofcollector�current(ind.�load,�Tj=175°C,�VCE=400V,�VGE=15/0V,rG=14,6Ω,�test�circuit�in�Fig.�E)

IC,�COLLECTOR�CURRENT�[A]

t,�SWITCHING�TIMES�[ns]

4 8 12 16 20 24 28 32 36 401

10

100td(off)tftd(on)tr

Figure 10. Typical�switching�times�as�a�function�of�gateresistor(ind.�load,�Tj=175°C,�VCE=400V,�VGE=15/0V,IC=20A,�test�circuit�in�Fig.�E)

rG,�GATE�RESISTOR�[Ω]


5 10 15 20 25 30 35 40 45 5010

100


Figure 11. Typical�switching�times�as�a�function�ofjunction�temperature(ind.�load,�VCE=400V,�VGE=15/0V,�IC=20A,rG=14,6Ω,�test�circuit�in�Fig.�E)



0 25 50 75 100 125 150 1751

10


Figure 12. Gate-emitter�threshold�voltage�as�a�functionof�junction�temperature(IC=0.29mA)


VGE(th

) ,�GATE

-EMITTE

R�THRESHOLD

�VOLT

AGE�[V

]

0 25 50 75 100 125 150 1752

3

4

5

6typ.min.max.

9


Rev.�2.2,��2014-03-11

Figure 13. Typical�switching�energy�losses�as�afunction�of�collector�current(ind.�load,�Tj=175°C,�VCE=400V,�VGE=15/0V,rG=14,6Ω,�test�circuit�in�Fig.�E)

IC,�COLLECTOR�CURRENT�[A]

E,�S

WITCHING�ENERGY�LOSSES�[m

J]

4 8 12 16 20 24 28 32 36 400.0

0.5

1.0

1.5

2.0

2.5

3.0EoffEonEts

Figure 14. Typical�switching�energy�losses�as�afunction�of�gate�resistor(ind.�load,�Tj=175°C,�VCE=400V,�VGE=15/0V,IC=20A,�test�circuit�in�Fig.�E)

rG,�GATE�RESISTOR�[Ω]

E,�S


J]

5 10 15 20 25 30 35 40 45 500.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00EoffEonEts

Figure 15. Typical�switching�energy�losses�as�afunction�of�junction�temperature(ind�load,�VCE=400V,�VGE=15/0V,�IC=20A,rG=14,6Ω,�test�circuit�in�Fig.�E)


E,�S


J]

0 25 50 75 100 125 150 1750.00

0.25

0.50

0.75

1.00

1.25EoffEonEts

Figure 16. Typical�switching�energy�losses�as�afunction�of�collector�emitter�voltage(ind.�load,�Tj=175°C,�VGE=15/0V,�IC=20A,rG=14,6Ω,�test�circuit�in�Fig.�E)


E,�S


J]

200 250 300 350 400 4500.00

0.25

0.50

0.75

1.00

1.25

1.50EoffEonEts

10


Rev.�2.2,��2014-03-11

Figure 17. Typical�gate�charge(IC=20A)

QGE,�GATE�CHARGE�[nC]

VGE,�G

ATE

-EMITTE

R�VOLT

AGE�[V

]

0 20 40 60 80 100 120 1400

2

4

6

8

10

12

14

16120V480V

Figure 18. Typical�capacitance�as�a�function�ofcollector-emitter�voltage(VGE=0V,�f=1MHz)


C,�C

APACITANCE�[pF]

0 10 20 3010

100

1000

CiesCoesCres

Figure 19. Typical�short�circuit�collector�current�as�afunction�of�gate-emitter�voltage(VCE≤400V,�start�atTj=25°C)


IC(SC) ,�SHORT�CIRCUIT�COLLECTO

R�CURRENT�[A]

10 12 14 16 18 2050

100

150

200

250

300

Figure 20. Short�circuit�withstand�time�as�a�function�ofgate-emitter�voltage(VCE≤400V,�start�at�Tj≤150°C)


tSC,�S

HORT�CIRCUIT�W

ITHSTA

ND�TIME�[µs]

10 11 12 13 14 150

3

6

9

12

15

11


Rev.�2.2,��2014-03-11

Figure 21. IGBT�transient�thermal�impedance(D=tp/T)

tp,�PULSE�WIDTH�[s]

ZthJC,�T

RANSIENT�TH

ERMAL�IMPEDANCE�[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.070410429.6E-5

20.30708516.8E-4

30.31989840.01084623

40.18715380.06925485

12


Rev.�2.2,��2014-03-11

PG-TO247-3

13


Rev.�2.2,��2014-03-11

t

a

a

b

b

td(off) tf trtd(on)

90% IC

10% IC

90% IC

10% IC

t

90% VGE

vGE(t)

t

t

iC(t)

vCE(t)

90% VGE

vGE(t)

t

t

iC(t)

vCE(t)

tt1 t4

2% IC

10% VGE

2% VCE

t2 t3

14


Rev.�2.2,��2014-03-11

Revision�History

IGW20N60H3

Revision:�2014-03-11,�Rev.�2.2Previous Revision

Revision Date Subjects (major changes since last revision)

1.1 2010-07-26 Preliminary datasheet

2.1 2013-12-09 New value IRmax limit at 175°C

2.2 2014-03-11 Max ratings Vce, Tvj ≥ 25°C

We�Listen�to�Your�CommentsAny�information�within�this�document�that�you�feel�is�wrong,�unclear�or�missing�at�all�?Your�feedback�will�help�us�to�continuously�improve�the�quality�of�this�document.Please�send�your�proposal�(including�a�reference�to�this�document)�to:�[email protected]

Published�byInfineon�Technologies�AG81726�Munich,�Germany81726�München,�Germany©�2014�Infineon�Technologies�AGAll�Rights�Reserved.

Legal�DisclaimerThe�information�given�in�this�document�shall�in�no�event�be�regarded�as�a�guarantee�of�conditions�or�characteristics.With�respect�to�any�examples�or�hints�given�herein,�any�typical�values�stated�herein�and/or�any�information�regarding�theapplication�of�the�device,�Infineon�Technologies�hereby�disclaims�any�and�all�warranties�and�liabilities�of�any�kind,including�without�limitation,�warranties�of�non-infringement�of�intellectual�property�rights�of�any�third�party.

InformationFor�further�information�on�technology,�delivery�terms�and�conditions�and�prices,�please�contact�the�nearest�InfineonTechnologies�Office�(www.infineon.com).

WarningsDue�to�technical�requirements,�components�may�contain�dangerous�substances.�For�information�on�the�types�inquestion,�please�contact�the�nearest�Infineon�Technologies�Office.The�Infineon�Technologies�component�described�in�this�Data�Sheet�may�be�used�in�life-support�devices�or�systemsand/or�automotive,�aviation�and�aerospace�applications�or�systems�only�with�the�express�written�approval�of�InfineonTechnologies,�if�a�failure�of�such�components�can�reasonably�be�expected�to�cause�the�failure�of�that�life-support,automotive,�aviation�and�aerospace�device�or�system�or�to�affect�the�safety�or�effectiveness�of�that�device�or�system.�Lifesupport�devices�or�systems�are�intended�to�be�implanted�in�the�human�body�or�to�support�and/or�maintain�and�sustainand/or�protect�human�life.�If�they�fail,�it�is�reasonable�to�assume�that�the�health�of�the�user�or�other�persons�may�beendangered.

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Table of ContentsMaximum ratingsThermal ResistanceElectrical Characteristics (Static)Electrical Characteristics (Dynamic)Switching Characteristic, Inductive Load, at Tj lowSwitching Characteristic, Inductive Load, at Tj highChartsChartsChartsChartsChartsChartsPackage DrawingTesting ConditionsRevision HistoryDisclaimer

Documents

High speed IGBT in Trench and Fieldstop technology · Time between short circuits: ≥ 1.0s Tvj = 150°C tSC 5 µs Power dissipation TC = 25°C Power dissipation TC = 100°C Ptot