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2010 International 2010 International Workshop on Extreme Ultraviolet Sources University College Dublin, Ireland,
November 13-15, 2010
High intensity EUV and soft XHigh intensity EUV and soft X--ray ray plasma sources plasma sources modellingmodelling
Sergey V. Zakharov+, Vasily S. Zakharov+,Peter Choi, Alex Yu. Krukovskiy, Vladimir G. Novikov, Anna D. Solomyannaya
NANO‐UV sasEPPRA sasKIAM RAS
+
also with RRC Kurchatov
Institute
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
ABSTRACT ABSTRACT The average power of EUV sources at IF required for lithography HVM is higher than presently available. At the same time, for actinic mask blanks, patterned mask and in-situ inspection tools, EUV sources of moderate power but very high brightness are required. In practice, the non-equilibrium plasma dynamics and self-absorption of radiation limits the in-band EUV radiance of the source plasma, and the etendue constraint limits the usable power of a conventional single unit EUV source. Under those conditions one of the primary goals in the development of EUVL is the modelling of plasma-based light sources created by intense lasers and high-current pulsed discharges. A new generation of the computational code Z* is currently developed under international collaboration in the frames of FP7 IAPP project FIRE for modelling of multi-physics phenomena in radiation plasma sources to contribute considerably to solving current EUVL source problems as well as extending their application to subsequent nodes (16nm and beyond) and to shorter wavelength radiation applications. The radiation plasma dynamics, the spectral effects of self-absorption in LPP and DPP and resulting conversion efficiencies are discussed. The modelling results are guiding a new generation of multiplexed sources being developed at NANO-UV, based on spatial/temporal multiplexing of individual high brightness units, to deliver the requisite brightness and power for lithography, actinic metrology and soft X- ray imaging applications.
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
EUV LithographyEUV Lithographychosen for chosen for nanonano features microchip productionfeatures microchip production
HP
EUV source for HVM & actinic mask inspectionEUV source for HVM & actinic mask inspection-- a key challenge facing the industry a key challenge facing the industry
NOWNOWEUV to EUV to
16 nm HVM16 nm HVM
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
EUV Light SourceEUV Light Source• Sn, Xe, Li … high energy density plasma (Te =20-40eV) - EUV light
source in narrow 2% band around 13.5nm wavelength• LPP & DPP - methods to produce the the right conditions for HED plasma
‐ kW (source) W (IF) is the source of the problem
-
combined NdYAG
+CO2
• For HVM - 200-500 W of in-band power @ IF with etendue < 3mm2sr • For mask inspections ABIAIMSAPMI – 10 100 1000 W/mm2·sr
at-wavelength radiance
DPP
Z * MHD code modeling
LPPmicro plasmaDPP
I = 1011 W/cm2
Te = 40eVNe =1019-1021 cm-3
j = 1 - 10 MA/cm2
Te = 20-30eVNe =1015-1017 cm-3
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
plasma dynamics spectral radiation transport non-equilibrium atomic kinetics with fast electrons transport of fast ions/electrons condensation, nucleation and transport nanosize particles.
• Modelling can be the key factor to scientific and technological solutions in EUVL source optimization with fast particles and debris to solve current EUVL source problems as well as extending their application to 22nm and beyond.
• The research and transfer of knowledge is focused on two major modeling applications;
EUV source optimization for lithography and nanoparticle production for nanotechnology.
• Theoretical modelling will be benchmarked by LPP and DPP experiments
Next Generation Modelling ToolsNext Generation Modelling Tools -- FP7 IAPP project FP7 IAPP project FIREFIRE
• Theoretical models and robust modeling tools are developed under international collaboration in the frames of European FP7 IAPP project FIRE• The FIRE project aims to substantially redevelop the Z* code to include improved atomic physics models and full 3- D plasma simulation of
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
ZETA ZETA ZZ* * RMHD Code RMHD Code ZZ* * BMEBME complete physical modelcomplete physical model
DPPDPPsimulationsimulation
in real in real geometrygeometry
LPPLPP
Data output:r,z,v,Te,i
,ρ,E,B,Z,Uω
, etc;visualization
RMHD
(r,z+φ) with: • spectral multigroup
radiation transport in nonLTE;
• nonstationary, nonLTE
ionization; • sublimation –
condensation;• energy supply (electric power, laser)• etc
TABLESnonLTE
atomic & spectral data
(Te,ρ,U)
EMHD or 3D PIC
with:ionization of weekly
ionized plasma
Spectral postprocessing
Heat flux postprocessing
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
10-5
10-4
10-3
10-2
10-1
100
101
102
10-18 10-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2
R=0.04mmR=0.08mmR=0.16mmR=0.31mmR=0.625mmR=1.25mmR=2.5mmR=5mm
EUV
Rad
ianc
e, M
W/m
m2
sr
Effective Depth (rho2*r), g2/cm3
tin
0
0.05
0.1
0.15
10-18 10-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2
R=0.04mmR=0.08mmR=0.16mmR=0.31mmR=0.625mmR=1.25mmR=2.5mmR=5mm
Spec
tral E
ffici
ency
(Peu
v/Pr
ad)
Effective Depth (rho2*r), g2/cm5
tin
EUV Brightness Limit of a Source EUV Brightness Limit of a Source
.- the Conversion Efficiency of a single source decreases if the in-band EUV output increases
(at the same operation frequency)
Z* Scan
g2/cm5
g2/cm5
• The intensity upper Planckian limit of a single spherical optically thick plasma source in /=2% band around =13.5nm
• Source with pulse duration and repetition rate f yields the time-average radiance L =I·( f)
• At T22eV L
1.1(W/mm2 sr)·(ns)·f(kHz)
• Plasma self-absorption defines the limiting brightness of a single EUV source and required radiance
• The plasma parameters where EUV radiance is a maximum are not the same as that when the spectral efficiency is a maximum.
)/(72/2 2
)(924
2
11srmmMWhcI
ee eVTThc
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
EUV IF Power Limitation: EUV IF Power Limitation: prediction vs. observationprediction vs. observation
• Low temperature Xenon plasma EUV emission
Experimental observation of limitation of the in- band EUV power at IF from xenon DPP source[M. Yoshioka et al. Alternative Litho. Tech. Proc. of SPIE, vol. 7271 727109-1 (2009)]
Xenon plasma parameter scan with Z*-code showing the in- band radiance limitation from XeI-XeXI ions
xenon
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
T Kato et al. J. Phys. B: At. Mol. Opt. Phys. 41 (2008)
10-3
10-2
10-1
100
101
102
10-7 10-6 10-5 10-4 10-3 10-2 10-1 100
R=0.04mmR=0.08mmR=0.16mmR=0.31mmR=0.625mmR=1.25mmR=2.5mmR=5mm
EUV
Rad
ianc
e, M
W/m
m2
sr
Mass Depth (rho*r), g/cm2
LT
xenon
HT
Z* Scan
• XeXXII - XeXXXproduce bright 4f-4d*, 4d-4p*, 5p-4d* [White, O’Sulivan] (3dn4f1 + 3dn4p1
3dn4d1) satellites in EUV range near 13.5nm
• XeXXII has ionization potential 619eV
Bright EUV Emission Bright EUV Emission from highly charged xenon ionsfrom highly charged xenon ions
Tokamak experimental data • There are two regimes in transparent plasma of xenon: Low - Temperature (LT) with XeXI and High - Temperature (HT) with XeXVII-XeXXX ions contributing into 2% bandwidth at 13.5nm.
• For small size xenon plasma, the maximum EUV radiance in the HT can exceed the tin plasma emission
(for more details see poster: Vasily S. Zakharov et al)
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
R(cm)
Z(cm
)
-0.04 -0.02 0 0.02 0.040.2
0.22
0.24
0.26
0.28
0.3DENS(g/ccm)
5.5E+003.3E+002.0E+001.2E+007.4E-014.5E-012.7E-011.7E-011.0E-016.1E-023.7E-022.2E-021.4E-028.2E-035.0E-033.0E-031.8E-031.1E-036.7E-044.1E-042.5E-041.5E-049.1E-055.5E-05
t= -1.8000E+01 ns
laser
Frame 001 12 Oct 2010 ZSTAR - code output, cell values
R(cm)
Z(cm
)
-0.04 -0.02 0 0.02 0.040.2
0.22
0.24
0.26
0.28
0.3DENS(g/ccm)
5.5E+003.3E+002.0E+001.2E+007.4E-014.5E-012.7E-011.7E-011.0E-016.1E-023.7E-022.2E-021.4E-028.2E-035.0E-033.0E-031.8E-031.1E-036.7E-044.1E-042.5E-041.5E-049.1E-055.5E-05
t= 1.9246E+01 ns
Frame 001 12 Oct 2010 ZSTAR - code output, cell values
LPP Dynamics LPP Dynamics under COunder CO22 -- laser pulselaser pulse
40m tin dropletplasma mass
density
CO2
-laser pulse:Pulse energy 200mJPulse duration 15ns FWHMFocal spot size 200 m
0
2
4
6
8
10
12
14
-20 -10 0 10 20 30 40 50 60
Pow
er, M
W
Time, ns
irradiationabsorption
Loses: reflections and large focal size at initial moment
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
1.7E-06
1.7E-06
1.7E-06
1.7E-06
5.4E-0
6
5.4E-06
5.4E-06
1.7E-05
1.7E-05
5.4E-055.4
E-05
5.4E-05
1.7E-04
R(cm)
Z(cm
)
-0.04 -0.02 0 0.02 0.040.2
0.22
0.24
0.26
0.28
0.3Ne(Av)
1.7E-035.4E-041.7E-045.4E-051.7E-055.4E-061.7E-06
t= 1.9246E+01 ns
Frame 001 12 Oct 2010 ZSTAR - code output, cell values
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
-20 -10 0 10 20 30 40 50 60
Pow
er, M
W
Time, ns
EUV emission
R(cm)
Z(cm
)
-0.04 -0.02 0 0.02 0.040.2
0.22
0.24
0.26
0.28
0.3Qeuv(J/ccm)
4.0E+043.8E+043.7E+043.5E+043.3E+043.1E+043.0E+042.8E+042.6E+042.4E+042.3E+042.1E+041.9E+041.7E+041.6E+041.4E+041.2E+041.0E+048.7E+037.0E+035.2E+033.5E+031.7E+03
-1.0E+00
Time-integrated
Frame 001 12 Oct 2010 ZSTAR - code output, cell values
EUV EmissionEUV Emission under COunder CO22 -- laser pulselaser pulse
R(cm)
Z(cm
)
-0.04 -0.02 0 0.02 0.040.2
0.22
0.24
0.26
0.28
0.3Te(eV)
8.4E+018.1E+017.7E+017.4E+017.0E+016.7E+016.3E+016.0E+015.6E+015.3E+014.9E+014.6E+014.2E+013.9E+013.5E+013.2E+012.8E+012.5E+012.1E+011.8E+011.4E+011.1E+017.0E+003.5E+00
t= 1.9246E+01 ns
Frame 001 12 Oct 2010 ZSTAR - code output, cell values
plasma electron
temperatureTe
plasma electron density
Ne
in 2% @ 13.5nm
EUV source cross-section
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
Main pulse: CO2 -laser 0.2 J/pulse, 15, 30 and 50ns fwhm, 200m focal spot sizePre-pulse laser
(if applied): Nd:YAG 5 mJ/pulse, 10ns fwhm, 40m spot size
Conversion Efficiency of COConversion Efficiency of CO22 --laser laser on pulse duration, with & w/out preon pulse duration, with & w/out pre--pulsepulse
Calculated EUV Calculated EUV brightness is up to brightness is up to 24 W/mm24 W/mm22 srsr kHzkHz
Target:40m diameter tin droplet(20 m for 100mJ laser)
0
0.5
1
1.5
2
2.5
3
0 10 20 30 40 50 60
Con
vers
ion
Effic
ienc
y, %
Pulse duration, ns
200mJ w/out pre-pulse200mJ with 5mJ pre-pulse
100mJ with pre-pulse (EUVA)
Z* Scan
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
Capillary Discharge EUV SourceCapillary Discharge EUV Source resistive regimeresistive regime
-5
-4
-3
-2
-1
0
1
2
0 20 40 60 80 100
Dis
char
ge c
urre
nt, k
A
Time, ns
In a resistive regime of capillary discharge, the high joule dissipation in the tight conductive channel produced by hollow cathode electron beam creates an efficient mechanism of plasma heating and EUV or soft X-ray emission consequently.
Also, fast electrons increase the ionization degree of heavy ion (Xe,…) plasma increasing eo ipso EUV yield.
-6-5-4-3-2-1 0 1 2 3 4
0 5 10 15 20 25 30 35 40
disc
harg
e cu
rren
t, kA
time, ns
I, kA
Inductive regime Resistive regime
19kV charge 1.2 nF capacitor
23kV charge 1.9 nF capacitor
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
At EUV emission maximum:
Ne =2-3 1016cm-3, Te =25-40eV.
R(cm)
Z(cm
)
0 0.5
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4 Ne(Av)
1.0E-078.2E-086.7E-085.5E-084.5E-083.7E-083.0E-082.5E-082.0E-081.6E-081.4E-081.1E-089.0E-097.4E-096.1E-095.0E-094.1E-093.3E-092.7E-092.2E-091.8E-091.5E-091.2E-091.0E-09
t= 3.3114E+01 ns
Cathode
Anode
capi
llary
capi
llary
Frame 001 12 Oct 2010 ZSTAR - code output, cel
Capillary Discharge EUV SourceCapillary Discharge EUV Source dynamics & EUV emissiondynamics & EUV emission
3D volumetric compression Calculated EUV brightness is up to Calculated EUV brightness is up to
10 W/mm10 W/mm22 srsr kHzkHz
0
0.01
0.02
0.03
0.04
0.05
0 20 40 60 80 100
Pow
er, M
W
Time, ns
EUV emissionin 2% @ 13.5nm
496mJ stored energy
R(cm)
Z(cm
)
0 0.5
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4 Qeuv(J/ccm)
1.0E+009.7E-019.4E-019.1E-018.8E-018.5E-018.2E-017.9E-017.6E-017.3E-017.0E-016.7E-016.3E-016.0E-015.7E-015.4E-015.1E-014.8E-014.5E-014.2E-013.9E-013.6E-013.3E-013.0E-01
Time-integrated
Cathode
Anode
capi
llary
capi
llary
Frame 001 13 Oct 2010 ZSTAR - code output, cel
EUV source cross-section
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
Gen II Gen II EUV SourceEUV Source -- characteristics & optimization from Zcharacteristics & optimization from Z** modellingmodelling
0
200
400
600
800
1000
200 250 300 350 400 450 500 550 600
In-b
and
EUV
ener
gy p
er s
hot,
uJ
Stored energy, mJ
Energy scan calculated
(in 2% band)
Optimization by gas mixture pressure
EUV source scan by stored electrical energy
0
200
400
600
800
1000
0 5 10 15 20 25 30
In-b
and
EUV
ener
gy p
er s
hot,
uJ
Pressure, a.u.
885J/shot
496mJ stored energy
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
10-5
10-4
10-3
10-2
10-1
100
101
102
10-9 10-7 10-5 10-3 10-1
R=0.04mmR=0.08mmR=0.16mmR=0.31mmR=0.625mmR=1.25mmR=2.5mmR=5mm
EUV
Rad
ianc
e, M
W/m
m2
sr
Mass Depth (rho*r), g/cm2
MultiplexingMultiplexing -- a solution for high power & brightnessa solution for high power & brightness
Z* Scan
tin• Small size sources, with low enough etendue
E1 =As << 1 mm2 sr can be multiplexed.
• The EUV power of multiplexed N sources is
The EUV source power meeting the etendue requirements increases as N1/2
• This allows efficient re-packing of radiators from 1 into N separate smaller volumes without losses in EUV power
fNEPEUV
• Spatial-temporal multiplexing: The average brightness of a source and output power can be increased by means of spatial-temporal multiplexing with active optics system, totallizing sequentially the EUV outputs from multiple sources in the same beam direction without extension of the etendue or collection solid angle
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
MPP source for soft xMPP source for soft x--ray microscopyray microscopyZ*-code modelling
Time integrated image of soft x-ray (400 -
600eV) sourceNitrogen plasma
at emission maximum
0.48J/pulse chargeFast electrons induced
discharge in 3-D volumetric
compression regime
Discharge current and soft x-ray pulse
<Z>
5Te = 45 -
55eVNe
2·1017cm-3
Nitrogen: He-like and H-like
R(cm)
Z(cm
)
-0.2 0 0.2
0.5
1
1.5
2
Ne(Av)
3.6E-073.4E-073.3E-073.1E-073.0E-072.8E-072.7E-072.5E-072.3E-072.2E-072.0E-071.9E-071.7E-071.6E-071.4E-071.3E-071.1E-079.4E-087.8E-086.3E-084.7E-083.1E-081.6E-08
t= 1.9037E+01 ns
anode
cathode
capi
llary
capi
llary
Frame 001 13 Aug 2010 ZSTAR - code output, cell values
R(cm)
Z(cm
)
-0.2 0 0.2
0.5
1
1.5
2Qww(J/ccm)
0.550.520.480.450.420.380.350.320.280.250.220.180.150.120.080.05
time integrated
anode
cathode
capi
llary
capi
llary
Frame 001 13 Aug 2010 ZSTAR - code output, cell values
0.48J/pulse charge
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
COPYRIGHT 2010 NANO‐UV
• R&D team & collaborators
–
R&D team of EPPRA and Nano‐UV–
Pontificia
Universidad Catolica
de Chile–
RRC Kurchatov
Institute, Moscow, Russia–
Keldysh
Institute of Applied Mathematics RAS,
Moscow, Russia–
University College Dublin–
King’s College London–
EUVA, Manda
Hiratsuka, Japan
• Sponsors - EU & French Government–
ANR‐
EUVIL–
FP7 IAPP–
OSEO‐ANVAR
• RAKIA
• COST
AcknowledgementAcknowledgement