Multiplexed EUV Sources based on a Compact Module with ... · + also with RRC Kurchatov Institute, Moscow, Russia. ... A EUV Source optimized for Aerial Image ... – ML mirrors modelling

2010 International Workshop on EUV SourcesUCD, Dublin

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Multiplexed EUV Sources based on a Compact Module with High Irradiance and Low Etendue

for Metrology Applications

Peter Choi, Sergey V. Zakharov +, Raul Aliaga-Rossel, AdriceBakouboula, Otman Benali, Philippe Bove, Michele Cau, Grainne Duffy, Carlo Fanara, Wafa Kezzar, Blair Lebert,

Keith Powell, Ouassima Sarroukh, Luc Tantart, Clement Zaepffel, Vasily S. Zakharov

NANO‐UV sas, 16‐18 av du Québec, SILIC 705, Villebon/Yvette 91140, FranceEPPRA sas, 16 av du Québec, SILIC 706, Villebon/Yvette 91140, France+ also with RRC Kurchatov Institute, Moscow, Russia


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OUTLINE

High brightness EUV sources are required

NANO-UV compact EUV source module· enhanced plasma radiance in resistive regime

· module characteristics

· progress over the last six months

· highly charged Xe

ion EUV emission

Multiplexing principles & realization· HYDRA4-ABI™

prototype system

· HYDRA12-AIMS™ source prototype

High brightness EUV sources are required

NANO-UV compact EUV source module· enhanced plasma radiance in resistive regime

· module characteristics

· progress over the last six months

· highly charged Xe

ion EUV emission

Multiplexing principles & realization· HYDRA4-ABI™

prototype system

· HYDRA12-AIMS™ source prototype

Presenter

Presentation Notes

Introduce out line of talk before moving on, I would like to express our thanks to JETRO, Japan External Trade Organization, for inviting nanoUV to participate at this SEMICON Japan exhibition. The opportunity to present here at the Exhibitor Seminar is gratefully appreciated. nanoUV is presenting at the JETRO Zone, at booth 9D-801, and we look forward to meeting all of you who find our product development in EUV light sources of interests in the next few days.


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Remaining Focus Areas

- light source for Litho and mask inspection critical -

EUVL Symposium, Prague 2009

EUVL Symposium, Kobe 2010

1 - Mask yield & defect inspection/review infrastructure

2 - Long-term source operation with 200W at the IF for 10mJ/cm2 resist sensitivity

3 – Resist: resolution, sensitivity, LER

1 - Mask yield & defect inspection/review infrastructure

2 - Long-term source operation with 115 W at the IF for 5mJ/cm2 resist sensitivity or with 200W at the IF for 10mJ/cm2 resist sensitivity

(for 22nm HP)


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Metrology Source Requirements•

actinic metrology tools required

ABI –

actinic mask blank inspection

AIMS – aerial imaging microscope

APMI – actinic patterned mask inspection

in‐situ AI – at scanner reticle

cleanliness inspection

•

a very different source compared with Litho sources

illumination field size ‐

much smaller (0.01 ‐

1 mm)2

power density on target ‐

irradiance much higher

etendue

‐

much smaller ( ~10‐2

‐

10‐4

mm2.sr )

source brightness ‐

much higher ABIAIMSAPMI – 10 100 >1000 W/mm2·sr at-wavelength radiance

•

sufficient throughput

(300 mm Wafer )

mask blank inspection < 45 mn

off‐line pattern mask inspection throughput of < 3 hr for full mask

at‐line pattern mask inspection throughput of < 1.5 hr for full mask

aerial imaging throughput of < 1 hr for full mask ( 50 defects /site inspection)

•

different optics compared with Litho scanner

small field size ‐

diffractive optics

small NA on Mask to match projection optics

Source brighter than a synchrotron is needed

‐


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The Core TechnologyThe Core Technology

ii--SoCoMoSoCoMo™™

CYCLOPSCYCLOPS™™ -- GEN II cellGEN II cell

Anode chamber +

water cooled

structure

Plasma expansion

chamber - water cooled

collimator structure

Cathode chamber +

shielding shell + gas distribution

+ air cooling

Physical Dimensions:Physical Dimensions:•

Source

: 150 mm diameter, 520 mm length, 7 kg•

Instrument rack

: 1300 x 600 x 800 mm, 200 kg

The emitting plasma in CYCLOPS™ is generated by a fast micro plasma pulsed discharge incorporating the i-SoCoMo™ technology, with an intrinsic plasma structure to provide photon collection and delivery. The Source module can be optimized to operate at high power or high irradiance.


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Measured performance• stored energy 400mJ• discharge in He/…/Xe admixture• use SXUV20 Mo/Si filtered diode (IRD) with Al

(110 nm) on Si3N4 (100 nm) filter = 3 nm EUV band (12.4 nm -15.4 nm)

• typical etendue 1.7 E-2 mm2.sr

0 5 10 15 20 25 30 35 40 45 50 55 600

100

200

300

400

500 Profil@70cm (21kV14mtorr ) Gauss fit of A70cm_Maxpulse

Data: A70cm_MaxpulseModel: Gauss Chi^2/DoF = 901.21631R^2 = 0.90311 y0 14.15126 ±5.06039xc 28.22778 ±0.17038w 5.56915 ±0.36386A 2180.03701 ±137.68802

Pho

todi

ode

sign

al (m

V)

Distance (mm)10 20 30 40 50 60 70 80 90

0

250

500

750

1000

Data: A120cm_MaxpulseModel: Gauss Chi^2/DoF = 3016.85555R^2 = 0.94528 y0 47.83777 ±9.27854xc 47.0658 ±0.21236w 12.01875 ±0.47686A 10359.83949 ±432.4633

Profil@120cm (21kV20mtorr ) Gauss fit of A120cm_Maxpulse

Pho

todi

ode

sign

al (m

V)

Distance (mm)

Distance source

to diode (cm)

Irrandiance@ 1kHzPh/cm2/s

BeamFWHM(mm)

Radiation half angle divergence

(deg)

70 5.7 E17 6.60.43°120 8.7 E16 14.1

Radiation solid angle =1.8 e-4 sr

Scanned

signal profile @ 70cm Scanned

signal profile @120cm

Source characteristics ‐

GEN II i‐SoCoMo


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Gen II EUV Source - characteristics & optimization from Z* modelling

0

200

400

600

800

1000

200 250 300 350 400 450 500 550 600

In-b

and

EUV

ener

gy p

er s

hot,

uJ

Stored energy, mJ

Energy scan calculated

(in 2% band)

Optimization by gas mixture pressure

EUV source scan by stored electrical energy

0

200

400

600

800

1000

0 5 10 15 20 25 30

In-b

and

EUV

ener

gy p

er s

hot,

uJ

Pressure, a.u.

885J/shot

496mJ stored energy

(for more details see poster: SergeyV.Zakharov et al)

Resistive regime


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Progress over the last six months ‐ irradiance vs

stored energy

-100 -50 0 50 100 150 200 250

0,0

0,2

0,4

0,6

0,8

1,0

1,2

1,4

19.1 kV

Phot

odio

de s

igna

l (V)

Time (ns)

20.3 kV 20.9 kV 21.3 kV 21.8 kV 22.0 kV

0.18 0.20 0.22 0.24 0.26 0.28 0.30 0.320.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Irrad

ianc

e at

the

prof

ile m

axim

um

(x 1

0e17

ph/

cm2/

s)

Stored energy (J)

Results presented at SPIE

February 2010

-20 0 20 40 60 80 100

0.0

0.5

1.0

1.5

2.0

2.5 19.9kV 20.5kV 21.3kV 22kV 22.6kV 23.1kV

Phot

odio

de s

igna

l (V)

Time (ns)

0.36 0.38 0.40 0.42 0.44 0.46 0.48 0.50 0.52

1

2

3

4

5

6

7

8

Irr

adia

nce

at th

e si

gnal

pea

k

(x 1

0e17

ph/

cm2/

s)

Stored energy (J)

Current Results

2.5 fold increase in the

irradiance

2.5 fold increase on

power

At same operating voltage

1.5 time increase on the

stored energy

Improvement on the

gas mixture and flow

rate


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EUV Emission of Highly Charged Xe Ions - from e-beam triggered discharge plasma

5 10 15 20 25

05000100001500020000250003000035000400004500050000

o.4

o.3

o.2

o.1

Wavelength (nm)

pressure (m

bar)

Inte

nsity

(arb

. uni

ts)

0

.1r)

in

EUV MeasurementCapillary discharge. VUV spectrograph data

Bright EUV emission in 2% band at 13.5 nm can be achieved from highly charged xenon ions in plasma with small percentage of fast electrons

(for more details see poster: Vasily S. Zakharov et al)


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10-5

10-4

10-3

10-2

10-1

100

101

102

10-9 10-7 10-5 10-3 10-1

R=0.04m mR=0.08m mR=0.16m mR=0.31m mR=0.625mmR=1.25m mR=2.5m mR=5mm

EUV

Rad

ianc

e, M

W/m

m2

sr

Mass Depth (rho*r), g/cm2

Multiplexing - a solution for high power & brightness

Z* Scan

tin• Small size sources, with low enough etendue E1 =As

<< 1 mm2 sr can be multiplexed.

• The EUV power of multiplexed N sources is

The EUV source power meeting the etendue requirements increases as N1/2

• This allows efficient re-packing of radiators from 1 into N separate smaller volumes without losses in EUV power

fNEPEUV

• Spatial-temporal multiplexing: The average brightness of a source and output power can be increased by means of spatial-temporal multiplexing with active optics system, totallizing sequentially the EUV outputs from multiple sources in the same beam direction without extension of the etendue or collection solid angle


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HYDRA4-ABI™

prototype system

A compact EUV Source for Mask Blank Metrology


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• Beam Distribution along Optical Axis

• Radiations observed on a fluorescent screen at various distance along the beam axis

HYDRA4‐ABI™ ‐

Spatial multiplexing

All 4 sources operating simultaneously

7 cm

1 cell UV image on screen

Z= 50 mmZ= 7 mm

Z= 0 mm @ Cross Over


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HYDRA4‐ABI™ ‐

Source multiplexing

• 4 Cells Simultaneous Operation @ 20 KV; 1 KHz

• Untriggered

discharges within 100 ns

• Filtered (3 nm band) photodiode signals records • 1 Cell discharge

200 ns

2 V


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• 4 cells operating @ 1 KHz @ 22 KV• Cells capacity : 1.2nF each• Operating Pressure ; 30mTorr

HYDRA4‐ABI™

- Spatial multiplexing

9.6 1013

ph/pulse 1.4mJ/pulse 1.4 W @ 1 KHz

4 Beams simultaneousSummation of 4 single Beams

Profile scans recorded on SUXV 20A ( Mo/Si ) Diode (3nm EUV band)positioned @ 70 cm perpendicular to the optical beam axis


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HYDRA4‐ABI™ ‐

Product for Blank Inspection tool

SpecificationsSpecificationsEUV performance:EUV performance:

Wavelength

: 13.5 nm

Irradiance

: 0,6 W@ IF

Radiant Brightness

: 60W/mm².sr inBand

2% @ IF

Typical Etendu

: 10‐2

mm².sr

Pulse repetition rate

: 3 kHz

Operation Gas

: He + N2

+ Xe

Source operating pressure : 60 mTorr

typical

Lifetime Time before service : 1 billions shots

Source size

: apertured

to 2mm spot in each beamUtility requirements:Utility requirements:

Electrical

: 380‐400V, 3Ø, 50/60 Hz, 3x32A

Cooling

: Water cooled (8 litres

per minutes, 15°C ‐

25°C inlet)

He Ar

Xe

: 3 bar inletPhysical Specifications:Physical Specifications:

Source

: 900 diameter, 650 mm length, 120 kg

Instrument rack

: 1760 x 1000 x 850 mm, 200 kgCompliance:Compliance:

HYDRA4‐

ABI™

: CE Mark, SEMI S2: CE Mark, SEMI S2‐‐07090709


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HYDRA12‐AIMS™

- Spatial multiplexing with variable sigma

- prototype system

12 Units operatingsequentially @ 1KHz

A EUV Source optimized for Aerial Image Measurements in Patterned Mask Metrology

Viewing into the 12 Units

operating @ 1KHz


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HYDRA12‐AIMS™ - Spatial multiplexing with variable sigma

• Design Specifications – 100 W/mm2.sr in‐band 2% EUV radiant brightness– 2.4W at the IF– etendue ‐

2.4 10‐2

mm2.sr (50% fill pupil)

– source area ‐ 4 mm2

/ variable sigma– optimized for aerial image measurements– 12x

i‐SoCoMo units, 5 kHz working each

– no debris / membrane filter– variable pupil fill and sigma

• Current Status– system characterization– single unit optimization– ML mirrors modelling– life time components testing

curved ML plane ML


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ROADMAP EUV SourceProjections

EUV SourceProjections



Attribute NanoUV NanoUV NanoUV NanoUVDate Current Mid-year 2011 Current Year-end 2011

Type of source

Level of integration ALPHA DEMO BETA PRODUCT ALPHA DEMO BETA PRODUCT

Demonstrated operating time 1b shots 5b shots 1b shots 5b shots

Wavelength (nm) 13.5 13.5 13.5 13.5Measured average EUV power (13.5 nm, 2 % FWHM), after collector (W)

0.6 (4 units@3 kHz, to include 1 ML) 0.6 0.8 (12 units@3kHz

to include 1 ML) 2.4

Source area (mm2) 7 TBD 4 variable sigma

Etendue of source output (mm2 sr) 1.00E-02 1.00E-02 2.40E-02 2.40E-02

Max. solid angle to system (sr) 2.00E-02 2.00E-02 TBD TBD

EUV brightness (13.5 nm, 2 % FWHM) (Wmm-2sr-1) 60 60 33 100

Repetition rate (kHz) 3 3 <5 5

Integrated energy stability (%) 3% rms 0.3% rms 3% rms 0.3% rms

Plasma size stability (mm) 0 0 0 0

Plasma position stability (mm) 0 0 0 0

Source cleanliness (10% throughput loss for ML) 1b shots 25b shots 1b shots 25b shots

Spectral purity

20 - 130 nm <1E-3 <1E-3 <1E-3 <1E-3

130 - 400 nm (DUV/UV) <1E-3 <1E-3 <1E-3 <1E-3

>= 400 nm (IR/VIS), including 10.6 mm <1E-3 <1E-3 <1E-3 <1E-3

HYDRA™-ABI HYDRA™-AIMS


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SUMMARY

The very high brightness of the light sources necessary for inspection are beyond

what is currently available. The self‐absorption of radiation limits the in‐band EUV radiance of the source plasma and makes it difficult to attain the necessary

brightness and power from a conventional single unit EUV source.

NANO‐UV is delivering a new generation of compact EUV light sources with an

intrinsic photon collector, the i‐SoCoMo™ concept, where a micro plasma pulsed

discharge source is integrated to a photon collector based on an in situ active

plasma structure. The source is characterized by high brightness, low etendue and very high irradiance, at moderate output power.

Time resolved measurements show substantial power/ irradiance increase

achievable in GEN II cell compared with previous data

Extrapolation suggests the source can deliver in 2% band around 13.5 nm ~ 1.6W

power to a spot of under 1 cm diameter ~ 16W average at 3 kHz, with 0.4J stored energy per pulse

Etendue

increases rapidly with increasing energy stored and EUV output but

remains < 10‐2 mm2.sr at the maximum parameters tested

Using a number of such source modules, we are developing light sources with

the requisite brightness and power to address the mask metrology needs, with

spatial and temporal multiplexing – the HYDRA™ design.


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• R&D team & collaborators

– Pontificia Universidad Catolica

de Chile

– RRC Kurchatov Institute, Moscow, Russia

– Keldysh Institute of Applied Mathematics RAS,

Moscow, Russia– University College Dublin–

King’s College London

• Sponsors - EU & French Government– ANR‐

EUVIL

– FP7 IAPP– OSEO‐ANVAR

• RAKIA

Acknowledgement


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A New Technical

Capability Arising

– Ultra high brightness– modular construction– small foot print– low cost of ownership– adaptable to user needs

Documents

Multiplexed EUV Sources based on a Compact Module with ... · + also with RRC Kurchatov Institute, Moscow, Russia. ... A EUV Source optimized for Aerial Image ... – ML mirrors modelling