GaN Power Transistors in Avionics and Radar Marketapps.richardsonrfpd.com/Mktg/Media/Microsemi_IMS2013.pdf · GaN Power Transistors in Avionics and Radar Market ... Driver x1 Before

Power Matters.

GaN Power Transistors in Avionics and Radar Market

© 2013 Microsemi Corporation. CONFIDENTIAL

MTTS – Seattle 2013 Jerry W. Chang Director, Transistor Solutions

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• GaN Technology Advantages

• GaN Transistors - Avionics and Radar

• Microsemi GaN Product Offering

• GaN Vertical Integration

Microsemi - Agenda

• Summary

©2013 Microsemi • Proprietary & Confidential

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Material Property Si SiC GaN

Band Gap (eV) 3 Times Silicon

1.1 3.2 3.5

Critical Field (106 V/cm) Ten Times Silicon

0.3 3 3.3

Thermal Conductivity (Watt/cm2-K) 3 Times Silicon

1.5 4.9 >1.5

High operating temperature. High voltage operation, higher power output and wider bandwidth. Higher Power Per part

GaN on SiC - higher power, higher frequency, longer pulses and duty cycle capabilities than Silicon:

Capability System Benefit

• Increase reliability • High operating temperature • Extend system range with

High power wide band amplifiers

• Reduce part size / eliminate cooling requirements

3X

10X

3X

GaN Material Property Advantages


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S-Band 2.7 – 2.9GHz,12 dB Gain, 500W Module

Output TR x4

Driver x1

Before Now

• One GaN replaces Five Si BJT transistors


GaN Power 2729GN-500

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Before Now

S-Band 2.7 – 2.9GHz,12 dB Gain, 500W Module


+

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S-Band Power of Excellence!

W

1000

900

800

700

600

500

400

300

200

100

Si-170

Si-300P GaN-300 GaN-400

GaN-500

GaN-1000P


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Microsemi GaN Power Transistors Leadership!

W 1000 700 600 500 400 300 200 100 10

Radar Avionics L-Band

1.2 - 1.4 GHz S-Band

2.7 – 2.9 GHz IFF ELM

1030/1090 MHz TACAN

960 /1215 MHz

MDSGN-750ELMV

MDS TCAS 1030/1090 MHz

MDS1400

2729-170M

1214-370V

MDS500L

TAN350

0912GN-650V

2729GN-500V 1214GN-550V

1214GN-280V 2729GN-270V 0912GN-300V

1214GN-20V

1011GN-1400V


2731GN-20V 0912GN-20V

0912GN-100LV 1214GN-100LV 2731GN-100LV

1011GN-1000V

+50V GaN Complete Lineups

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• Avionics IFF 1011GN-700ELM

• Radar – S-Band 2729GN-500V

• Radar – L-Band 1214GN-550V

Feature GaN Power Transistors


• Avionics Data Link 0912GN-650V

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Avionics – 1011GN-700ELM

Company Confidential

Mode-S ELM - 32us (on) / 18 us (off), x 48, Period=24 ms

MDS500L – Si BJT

1011GN-700ELM – GaN


• For Avionics Mode-S ELM • High Power >700W • High Gain > 21 dB • Excellent Efficiency > 70% • Class AB Bias • Fast Rise Time 20nS

Freq (MHz)

Pin (W)

Pout (W)

Gp (dB) Effi (%)

1030 60 525 9.4 57

Freq (MHz)

Pin (W)

Pout (W)

Gp (dB) Effi (%)

1030 5 720 21 72

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1011GN-700ELM: Excellent Temperature Stability


Less Than 1dB Gain and Power Varition from -55o to +85o C

1011GN-700ELM – Temperature Plot


• For Avionics Mode-S ELM • High Power >700W • High Gain > 21 dB • Excellent Efficiency > 70%

Temp (oC)

Pin (W) Pout (W) Gp (dB) Delta Gain

-55 5 621 20.9 -0.7

+25 5 720 21.6 0

+85 5 621 20.9 -0.7

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IFF 4kW Power Amplifier Application


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Avionics – 0912GN-650V


Broadband 960 -1215MHz, 128us, 10%


• 960 – 1215 MHz • Broadband Data Link • One Circuit Full Band • High Output Power >650W • High Gain > 17.5 dB • Excellent Flatness • Class AB Operation • Fast Rise Time 20nS

Freq (MHz)

Pin (W) Pout (W) Gp (dB) Effi (%)

960 11.2 684 17.9 53

1090 11.2 684 17.9 58

1215 11.2 721 18.1 63

0912GN-650V

0912GN-50V

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L-Band Radar – 1214GN – 550V


1200 – 1400MHz, 300us, 10%


• 1.2 – 1.4 GHz • High Output Power >550W • High Gain > 17 dB • Excellent Efficiency > 50% • Excellent Flatness • Class AB Operation • Fast Rise Time 20nS

Freq (GHz)


1.2 12 610 17.1 53

1.3 12 660 17.4 59

1.4 12 608 17.0 61

17 dB 1214GN-550V

2000W

17 dB 1214GN-60V

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S-Band ATC Radar – 2729GN-500V


2700 – 2900MHz, 100us, 10%


• 2.7 – 2.9 GHz • ATC Radar • High Power > 500W • High Gain > 11.5 dB • Excellent Efficiency > 50% • Class AB Operation • Fast Rise Time 20nS

Freq (GHz)


2.7 35.5 562 12.0 50

2.8 35.5 537 11.8 50

2.9 35.5 575 12.1 57

12 dB 2729GN-500V

13 dB 2731GN-220V

13 dB 2731GN-20V

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+50V Standard GaN Power Transistors


Model Number Freq (MHz) Pout (W)Gain (dB)

TypEfficiency

TypPulse

Width (us)Duty

Cycle (%) Vdd (V) Case

1011GN-1000V* 1030 1000 17.5 53 10 1 50 55KR

MDS-GN-750ELMV 1030/1090 750 17.2 63 ELM 6.4 50 55KR

DME-GN-700V 1025-1150 700 17.4 58 20 6 50 55KR

0912GN-20V 960-1215 20 17 55 128 10 50 55KR

0912GN-100LV 960-1215 100 16 50 3000 30 50 55KR

0912GN-300V 960-1215 300 16.8 55 128 10 50 55KR

0912GN-650V 960-1215 650 17.6 58 128 10 50 55KR

1214GN-20V 1200-1400 20 17 50 300 10 50 55KR

1214GN-100LV 1200-1400 100 16 50 3000 30 50 55KR

1214GN-180LV 1200-1400 180 16.6 52 3000 30 50 55KR

1214GN-280LV 1200-1400 280 16.7 60 200 20 50 55KR

124GN-550V 1200-1400 550 16.6 55 300 10 50 55KR

2729GN-150V 2700-2900 150 11.76 50 100 10 50 55QP

2729GN-270V 2700-2900 270 12.7 50 100 10 50 55QP

2729GN-500V 2700-2900 500 11.4 46 100 10 50 55KR

2731GN-20V 2700-3100 20 16 46 200 10 50 55QP

2731GN-100LV 2700-3100 100 11 50 3000 30 50 55QP

2731GN-110V 2700-3100 110 11.4 50 200 10 50 55QP

2731GN-220V 2700-3100 220 11.4 50 200 10 50 55QP

2731GN-450V 2700-3100 450 11 46 200 10 50 55KR

3135GN-20V 3100-3500 20 13 45 300 10 50 55QP

3135GN-110V 3100-3500 110 10.87 42 300 10 50 55QP

3135GN-200V 3100-3500 200 11 40 300 10 50 55QP

3135GN-400V 3100-3500 400 10.5 42 300 10 50 55KR

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16 ©2013 Microsemi • Proprietary & Confidential

GaN >1000W Pallet Model 2729GN-1000

Vdd = 65V, Idq = 2A_pk, 100us 5%

0

200

400

600

800

1000

1200

10 20 30 40 50 60 70

Pin (W)

Po

ut

(W)

10

12

14

16

18

20

22

Gai

n (

dB

)2.7 GHz

2.8 GHz

2.9 GHz

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GaN Products – Vertical Integration

Transistor

GaN Pallet

GaN Module

High Power Amp


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Summary

Microsemi GaN Power Transistors Leadership Complete +50V Lineups L-Band Radar – 550W S-Band Radar – 500W Avionics – Mode-S ELM 750W Avionics – TCAS 1000W

GaN Technology Advantages

Higher Power Higher Gain Better Efficiency Smaller Size Broader Band

GaN Transistor Demo Unit Available

Contact Information – [email protected]


GaN Product Vertical Integration

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POWERING A SMART SECURE CONNECTED WORLD

Thank You – Questions?

Documents

GaN Power Transistors in Avionics and Radar Marketapps.richardsonrfpd.com/Mktg/Media/Microsemi_IMS2013.pdf · GaN Power Transistors in Avionics and Radar Market ... Driver x1 Before