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GaN Integrated Circuits for Highest Performance
Power Supplies
Thierry Bouchet, Dominique Bergogne
APEC, March 19th 2019
www.ganwise.com [email protected]
1 of 26
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
Business model
Gan-ICsPower + driverMass production (TMSC)Reference designApplication support
Offer to market
National R&D centerGaNWise
Fabless company
Innovative patented circuit architecture for AC/DC Power supply
Design expertise and improved GaN/Si Design Kit for GaN IC
2 of 26
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
Business environnent
Innovation from national R&D center
Industrial partner for applications
Industrial partner for manufacturing
GANWISE Fablesscompany
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Wall outletBattery Operated Consumer ElectronicsHouse Hold Power Supplies, ChargerTV displays, datacenters
Wall outlet
Charger
TV displays
Data centers
15W 100W 500W 3kW
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
Breakthrough: size & efficiency
Power density(W/inch3)
Efficiency
98 %94 %90 %
Integration of GaN IC with Innovative Architectures
45
30
15
Conventional Silicon Baseddesigns
100 %4 of 26
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
GaN integration : Why ?
• High frequency means high speed commutations,
• High speed commutation (high dv/dt and di/dt) produces unwanted perturbations due to stray inductances in the circuit, V=L di/dt. Stray inductances come from packaging and coppers tracks in PCB connecting various elements in the power signal path.
Integrating along the power path reduces stray inductance and allows fast and clean commutations.
GaN integration means getting the power transistors together with the gate drivers on the same die to start with.
GaN for power conversion has now proved its ability to enable higher operatingfrequencies and higher efficiency, however…
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How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
Our innovative e-DAB architecture• Innovative embedded Dual Active Bridge (e-DAB)
AC input bridge using AC switchesIntegrated in one die !
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4 GaN Bidir
• 1 gate BidirectionalGaN transistors• ZVS detection & control
Smaller High power density & rectifier bridge removed with bidirectional devices
Reliability reduced high voltage component count
More efficient = low losses with ZVS in the DAB architecture
Cost effective= TSMC GAN/Si CMOS compatible technology high volume capability
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DAB architecture (AC-DC)
Monolithic Power GaN integrated circuit (Driver + Power in one die)
Done with a patented innovative e-DAB architecture
On a new GaN/Si qualified technology from TSMC
Our Product: GAN IC
+
Power cell driver GaN Power IC
=
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Half bridge + driver + level shifterHalf bidirectional bridge + driver+ level shifter
First Targeted GaN IC: half bridge
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
e-DAB architecture benefits
Power (W)
Efficiency (%)
27 45 65 100
90
92
94
96
98
100
e-DAB
ACF PFC-LLC
12
3
• Improve efficiency: 96% to 98%
• Reduce size: power density > 3kW/l
• Compatible for all power range : PFC integrated in the primary side
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100W, 1MHz AC-DCpower supply tests
240V AC 20 VDC
Smaller
More efficient
Integrating Magnetics
• Super Flat 1mm thick Magnetic Core integrated in PCB
100W, 1MHz prototypeintegrated transformerusing proprietary magnetic core
(CEA-tech Liten)
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Integrated transformer
Target : high frequency planar compact transformer working at 1MHz with optimized yield upper97%.
Optimize Copper and Fe losses.We use Ferroxcube material with 30mT and we have• Fe losses: 1W• Copper losses: 2WTransformer is included in the PCB board. Primary side is inside the PCB board.
Half bridge 20mRHalf bridge 100mR
Active Clamp Flyback < 65W
e-DAB > 65W
Half Bidirectional bridge 100mR
Half bridge 100mR
+ Gate Drivers
Scalable current capability
Integrated circuit chips
12 of 26
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
Device Static characterisation
• Validation of static behavior of all devices in the first lot
• Discrete power transistor 650V/100mW /50mW and 20mW (Ron.S=4 mW.cm2)
• With kelvin source and current sense pad
• Bidirectional power transistor 650V/40mW & 80mW
• Driver for half bridge 1MHz operation
• Level shifter for half bridge
• Pad ESD protection
13 of 26
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
Device Static characterisation
Vth=1,5V
Ron=50mW
BV>650V @ 1uA
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3 mm square
B6B
790#
01
B6B
790#
01
B6B
790#
03
B6B
790#
03
B6B
725#
04
B6B
725#
04
B6B
725#
05
B6B
725#
05
24
26
28
30
32
34
36
38
40
RO
N (W
.mm
)
before stress
after stress
RON comparison - T1A
slow
fast
standard
15 of 26
B6B
725#
04
B6B
725#
04
1.0
1.2
1.4
1.6
1.8
2.0V
th t
an
ge
nt
(V)
Vth forward before stress - T1A
T=25°C
T=150°C
B6B
725#
04
B6B
725#
04
30
40
50
60
Ro
n (W
.mm
)
Ron before stress - T1A
T=25°C
T=150°C
Vth decreases with the temperature
• Vth@25°C = 1,5V
• Vth@150°C = 1,3V
RDS(ON) increases with the temperature
• Ron@25°C = 26 Ω.mm
• Ron@150°C = 53 Ω.mm
B6B
725#
04
B6B
725#
04
10-9
10-8
10-7
Idss@
650V
(A
/mm
)
Idss@650V comparison between 25°C and 150 °C - T1A
T=25°C
T=150°C
Idss increase with the temperature
• Idss@25°C = 1,9.10-9 A/mm
• Idss@150°C = 1,3.10-7 A/mm
Temperature characterisation
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10 100 1000
0.01
0.1
1
Capacitance (
pF
/mm
)
Vds (V)
COSS
CRSS
CISS
CRSS, COSS and CISS from T2A (die X5Y4)
Spec T = 25°C
Ciss (pF/mm) 0,64
Coss (pF/mm) 0,1
Crss (pF/mm) 4.10-3
Dynamic device characterisation
AC magnitude = 30mV
f = 100 kHz
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
Device dynamic evaluation
• Integrated half bridge tested in buck mode 1MHz / 400V / 2A
VGS LS
VDS LS
I out
HS
LS
17 of 26
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
First GaN IC in QFN package• GaN IC assy in 8x8mm QFN package: half bridge with source sense and source
kelvin
• Use for prototyping the 100W USB type C PD power supply
18 of 26
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
First innovative 100W USB PD demonstrator
• Target is to validate the new innovative system topology with our first GaN ICo 100Wo 96% of efficiency (+2% vs actual state of the art)o Using new innovative ST controller STUSB4761 to manage USB C protocolo Design with EMI filterso Available for demonstration in April 2019
STUSB4761Power Delivery
Controller
HV GaN transistors & driversGaN IC
PrimaryControler
Transformer
LV Si transistor
passivespassives
Innovative e-DAB architecture (design, prototype realization, test, BOM, support)
STUSB4761 controllerUSB PD supplier and support
GaN IC GaNWISE(design, device)
19 of 26
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100W USB PD demonstrator
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
Wall plug application
• What are the challenges to integrate ?
Integration
Limited volume of wall plug
Thermal dissipation
Robustness & device
interoperability
21 of 26
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
Technology challenges for wall plug integration
Integration
Limited volume of wall plug
GaN technology with innovative power
GaN integrated circuit and system
architecture
(GANWISE GAN IC + e-DAB)
Robustness &
device interoperability
Certified USB Power Delivery controllers
Smart USB Power Delivery controllers with
embedded protections
(overvoltage / current / temp)
Thermal dissipation Smart USB Power Delivery controllers
with power sharing
New discrete component technologies
• How to integrate power block delivering 15W (smart phone) up to 60W -100W (computer / display / TV)?
22 of 26
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
Others applications
• GaN is robust to radiation !
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DC-DC converters for spatial market
• GaN is working at high temperature > 200°C
Motor drive for industrialapplications in harsh environment
GND
CC2
CC1
Physical
Layer
port status
VSENSE_DISCH
voltage
monitoring
Discharge
path
Policy
Engine
ISENSE_DISCH
CC
line
access
Protocol
Layer
Device
Policy
Manager
BMC
driver
VCONN_VSYS
VCONN SW
(OVP & OCP)
CC/CV
FB
OPTO_DRV
FAULT
VDD
POR
Internal
supply
T1
TSENSE
SCL
SDAI²C
slave
T2
T3
VBUS_EN_SRC
Port C
controller
Status
register
Standalone USB PD controller STUSB4761 with integrated CC/CV for AC/DC applications
SCL
TSENSE
SDA
GND
VBUS_EN_SRC
CC1
CC2
VREG_1V2VREG_2V7
RESET
VSYS_VCONN STUSB4761
QFN-16 3x3 mm²
VSENSE_DISCH
ISENSE_DISCH
FB
OPTO_DRV
Benefits
• No software skills required
• Robustness to high voltage
• Configurable and flexible
• Easy industrialisation
• reduced PCB area and cost versus discrete (small
QFN 3x3 package
• Low pin count24 of 26
Dp1
Dn1
Dn2
Dp2
TX1+
TX1-
TX2-
TX2+
RX1+
RX1-
RX2-
RX2+
CC2
CC1
VBUS
VBUS
VBUS
VBUS
CC1
CC2
VB
US_
EN_S
RC
VSENSE_DISCHVDD
VBUS
ISEN
SE_D
ISC
H
VSRC
OPTO_DRVFB
comp.network
AC-DC
type-CPHY
Type-CFSM
Gatedriver
VBUS
monitoring
VCONN
Switch(200mA)
VCONN
protections(OVP, OCP)
Reg.File
Internalregulation
CV/CC
Over Temp
Discharge path
NTC
USB PDFSM
Rshunt
TSENSE
NVM
I²C
R
SBU1
SBU2
GND
GND GND
GND
Simplified schematic STUSB4761
25 of 26
How to integrate power block delivering 15W (smart phone)
up to 60W -100W (computer / display / TV)?
GaNWise Road map
• road map, next improvement steps and cost evaluation
2019 2020 2021 2022 2023 2024 2025
System cost(BOM $/W)
G1
G2
G3
650V / 5APower HalfBridge + Drivers 650V / 5A
Full bridge+ drivers
passives
G2 + passives
POWERANALOGDIGITAL
26 of 26
drivers
Thank You