1200V GaN Half Bridge NTC2-LS VM40HB120Dvisic-tech.com/wp-content/uploads/2017/08/VM40HB120D-ver1.20.pdf1200V GaN Half Bridge VM40HB120D GaN Power Integrated Description Based on GaN

Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement changes at any time. www.visic-tech.com

Rev. 1.20 /

1/9

1200V GaN Half Bridge VM40HB120D GaN Power Integrated

Description Based on GaN technology as an Intelligent Power Module configurated as Half Bridge. GaN transistors and gate drivers (Buffers) with temperature and current sensors are combined in a single package. The patented electrical design takes advantage of VisIC's innovative GaN technology. Power GaN transistors use an original, high-density lateral layout that results in exceptionally fast switching performance and low RDS(ON). It is very effective in applications requiring high frequency with high efficiency, simple integration and high power density.

Key features • Lowest switching loss

• Internal Buffers

• Internal NTC

• Internal current sensor

• Isolated base plate (2.5KV) with standard creepage and clearance distances

• Copper base plate

• Zero recovery time, GaN switch reverse conduction capability

• Robust operation in high EMI environment

• Very low thermal resistance based on AlN ceramic

• Compatibility to standard MOSFET external driver

(SI8228CB-D as an example)

Applications • 3 Phase PFC

• AC-DC Power Supply

• Motor drive

• Battery chargers

• UPS, Solar Inverters

• Industrial switch mode power supply

Single Switch Key Performance Parameters Pin Out

Parameter Value

VDS (V) 1,200

RDS(ON) (mΩ) 40

Eoff (J) 180

Coss (pf) 120

ID,pulse (A) 180

ID,cont (A) 80

Pin Function Pin Function

4K,5K,6K,7K HV BUS

RTN 10K,11K,12K,13K

HV BUS

16D +12v-HS 1G +12v-LS

16F GND-HS 1E GND-LS

7A,8A,9A,10A Midpoint 1C NTC1-LS

10E C.S HS 1B NTC2-LS

7F C.S LS 16G GATE-HS

16H NTC1-HS 1D GATE-LS

16J NTC2-HS

GaN

GaN

CAP

C.S.

C.S.

t

NTC-L

t

NTC-H

HV BUS RTN

HV BUS

NTC1-LS

NTC2-LS

C.S-LS

MID

NTC2-HS

C.S-HS

GND-LS

NTC1-HS

+12v-LS

GATE-LS

GATE-HS

GND-HS

+12v-HS


Rev. 1.20 /

2/9


1) VDrv is relative to GND

2) Duty cycle =10% limited by Tj

Maximum ratings (Tj =25C unless otherwise specified)

Parameter Symbol Values

Unit Conditions Min Typical Max

Continuous drain current Each switch

ID - -

- -

80 58

A TC =25C

TC =100C

Pulsed drain current ID,pulse - - 180 A

Drive voltage 1) VDrv 12 - 0 V

Power dissipation each transistor PTOT - - 250 W

Operating and storage temperature

Tj, Tstg -55 - + 150 C

TC - - +110

Continuous reverse current Is - - 50 A

Reverse pulse current2) Is,pulse - - 140 A

Thermal characteristics



Thermal resistance, junction-case - Single switch

RθJC - - 0.45 C/W Top cooling via base plate

Thermal resistance, junction -ambient - Single switch

RθJA - - 25 C/W

Thermal soldering peak temperature

Tsold - - 260 C 4 mm from case for 10s


Rev. 1.20 /

3/9


1) Each transistor 2) VGate to GND HS&LS, correspondently

Electrical characteristic (Tj =25C unless otherwise specified)1)



Static per single switch

Drain-source breakdown voltage VDS - - 1200 V VDrv= 0V

Threshold voltage2) Vth 5 - - V VDS= 15V, ID=1mA

Drain source leakage current IDSS - 300

µA

VDrv = 0V

VDS= 1200V, Tj =25C

- 700 VGatev= 0V, VDS= 1200

Tj =150C

Gate-source leakage current IGSS - 3 5 nA VDS= 0V VDrv = 12V

Drain-source on state resistance Each switch

RDS(ON)

- 40 44

mΩ

VDrv =12v ID=35A

Tj =25C

- 80 88 VDrv =12v ID=35A

Tj =150C

Reverse voltage drop- At OFF mode

VR - - 5.0

V ID=10A Tj =25C

- - 5.6 ID=10A Tj =150C

Reverse voltage drop- At ON mode

VR - - 0.4

V ID=10A Tj =25C

- - 0.6 ID=10A Tj =150C

Reverse recovery time trr - - 0 ns

Reverse recovery charge Qrr - - 0 nC

Output Charge QOSS - - 85 nC VDrv=0v VDS=0-800v

Dynamic per Single Switch

Input capacitance Ciss - 800 900

pF f=1MHz VDrv =0V VDS=800V

Output capacitance Coss - 120 140

Reverse transfer capacitance Crss - 1.3 2.6

Effective Output Capacitance, Energy Related

CO(ER) - - 280 pF VDrv =0 to 12V VDS=0 to 800V

Turn-on delay time td(on) - 7.5 -

ns

VDS=800V VDrv =0V to 12V Rg=5 Ω ID=32A

Fall time tf - 4 -

Turn-off delay time td(off) - 36 -

Rise time tr - 10 -


Rev. 1.20 /

4/9


1) Each transistor

NTCS0402E3104FHT - Thermistor

Rated Resistance R25 100 kΩ TNTC = 25°C

Deviation of R100 ∆R/R -3.4 3.4 % TNTC = 100°C, R100 =6.9kΩ

Power dissipation P25 70 mW TNTC = 25°C

Resistance @ 50°C R50 36.306 kΩ TNTC = 50°C



Module

Isolation Test Volatge VISOL 2.5 kV RMS, f=50Hz, t=1 min

Stray Inductance L 15 nH

Electrical characteristics (Tj =25C unless otherwise specified)1)



Drive characteristics

Drive Current IDrv 2 A

Midpoint to case Capacitance

Capacitance CC - 40 - pF @ 1 MHz 0.1V RMS


Rev. 1.20 /

5/9


Pin Characteristic

Description Symbol Values

Unit Min Typical Max

External PWM Drive VDrv 0 11 12 V

Pin 16D +12V-HS 12V-HS 11 12 15 V

Pin 16F GND-HS GND-HS

Pin 1G +12V-LS 12V-LS 11 12 15 V Pin 16F GND-LS GND-LS

Sense Voltage @ 10A High side C.S-HS 20 25 30 mV

Sense Voltage @ 10A Low side C.S-LS 20 25 30

NTC Resistance @ 125C NTC 2.53 2.64 2.75 kΩ

NTC Resistance @50C NTC 28.4 29.9 31.5


Rev. 1.20 /

6/9


Package Outlines

Top View


Rev. 1.20 /

7/9


Typical Operating Circuit

Note: 12V-HS and 12V_LS are floating voltages, 1500V breakdown is required in between.


Rev. 1.20 /

8/9


Electrical characteristics diagrams

Figure 1: Switching Energy

Figure 2: GaN transistor transfer characteristic (source connected to Vdd,Vds=10V)

Figure 3: GaN transistor output characterictics

Figure 4: Switching time


Rev. 1.20 /

9/9


Figure 5: Typical capacitances

Important Notice – VisIC Technologies reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products, latest issue, and to discontinue any product. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. Unless expressly approved in writing by an authorized representative of VisIC technologies , VisIC technologies components are not designed or tested for use in, and is not intended for use in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, weapons systems, authorized or warranted for use in lifesaving, life sustaining, military, or space applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of performance. VisIC Technologies hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. All rights reserved.

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1200V GaN Half Bridge NTC2-LS VM40HB120Dvisic-tech.com/wp-content/uploads/2017/08/VM40HB120D-ver1.20.pdf1200V GaN Half Bridge VM40HB120D GaN Power Integrated Description Based on GaN