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Ferroelectric Thin F ilms X

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Cambridge University Press978-1-107-41211-8 - Materials Research Society Symposium Proceedings: Volume 688:Ferroelectric Thin Films XEditors: Stephen R. Gilbert, Susan Trolier-McKinstry, Yoichi Miyasaka, Stephen K. Streifferand Dirk J. WoutersFrontmatterMore information

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MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 688

Ferroelectric Thin Films X

Symposium held November 25-29, 2001, Boston, Massachusetts, U.S.A.

EDITORS:

Stephen R. GilbertAgilent Technologies

Palo Alto, California, U.S.A.

Susan Trolier-McKinstryPennsylvania State University

University Park, Pennsylvania, U.S.A.

Yoichi MiyasakaNEC CorporationSagamihara, Japan

Stephen K. StreifferArgonne National Laboratory

Argonne, Illinois, U.S.A.

Dirk J. WoutersIMEC

Leuven, Belgium

IMIRIS1Materials Research Society

Warrendale, Pennsylvania






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CONTENTS

Preface xiii

Acknowledgments xv

Materials Research Society Symposium Proceedings xvi

PROCESSING OF Pb-BASEDFERROELECTRICS

* Low Temperature Preparation of High-Quality Pb(Zr,Ti)O3

Films by Metal Organic Chemical Vapor Deposition WithHigh Reproducibility 3

Hiroshi Funakubo, Kuniharu Nagashima, Masanori Aratani,Kouji Tokita, Takahiro Oikawa, Tomohiko Ozeki,Gouji Asano, and Keisuke Saito

Role of Fluorite Formation in Orientation Selection in Sol-GelDerived Pb(Zr,Ti)O3 Films on Pt Electrode Layers 15

G.J. Norga, L. Fe, F. Vasiliu, D.J. Wouters, andO. Van der Biest

Precise Control of Nucleation and Growth in Lead ZirconateTitanate Thin Films by Scanning Rapid Thermal Annealing 21

Jang-Sik Lee and Seung-Ki Joo

Low-Temperature Crystallization of Pb(Zr0.4,Tio.6)03 ThinFilms by Chemical Solution Deposition 27

Kazunari Maki, Nobuyuki Soyama, Kaoru Nagamine,Satoru Mori, and Katsumi Ogi

PROCESSING OFBi-BASEDFERROELECTRICS

Heteroepitaxial Growth of (1, 0, m+1) One Axis-OrientedBismuth Layered Structured Ferroelectrics Thin FilmsDirectly Crystallized by MOCVD 35

Norimasa Nukaga, Takayuki Watanabe, Tomohiro Sakai,Toshimasa Suzuki, Yuji Nishi, Masayuki Fujimoto, andHiroshi Funakubo

*Invited Paper






Fabrication of V-Substituted (Bi,M)4Ti3Oi2 [M = Lanthanoids]Thin Films by Chemical Solution Deposition Method 41

H. Uchida, H. Yoshikawa, I. Okada, H. Matsuda, T. Iijima,T. Watanabe, and H. Funakubo

FERROELECTRIC NONVOLA TILE MEMORIES-TECHNOLOGY, FUNDAMENTALS, AND INTEGRATION

* Imprint in Ferroelectric Thin Films Caused by Screening of anElectric Field in a Thin Surface Layer 49

Michael Grossmann, Oliver Lohse, Dierk Bolten, Ulrich Boettger,and Rainer Waser

Iridium Based Electrodes for Ferroelectric CapacitorFabrication ~ 59

J.A. Johnson, J.G. Lisoni, and D.J. Wouters

POSTER SESSION

Ferroelectric-Gate Structures and Field-Effect TransistorsUsing (Bi,La)4Ti3O12 Films 67

Eisuke Tokumitsu, Takuya Suzuki, and Naoki Sugita

Crystallization Behavior and Ferroelectric Properties ofYMnO3 Thin Films on Si (100) Substrates 73

Dong Chul Yoo, Jeong Yong Lee, Ik Soo Kim, andYong Tae Kim

Characteristics of Memory Window and Retention Propertiesof One Transistor Memory Devices 79

Tingkai Li, Sheng Teng Hsu, Bruce Ulrich, and Dave Evans

Structural Inhomogeneity of SrBi2Ta2O9Thin Films Preparedby Layer-by-Layer Technique 85

J.B. Xu, G.D. Hu, and S. P. Wong

Crystallization Kinetics of Seeded SBTPowders From Sol-Gel Derived Precursors 89

Gopinathan M.A. Kumar, Woo-Chul Kwak, Se-Yon Jung,Seung-Joon Hwang, and Yun-Mo Sung

* Invited Paper

VI






Origin of Lowered Crystallization Temperature in SBT-BTTFerroelectric Thin Films 95

Woo-Chul Kwak, Gopinathan M.A. Kumar, Se-Yon Jung,Seung-Joon Hwang, and Yun-Mo Sung

Effect of Bottom Electrodes on Structural and ElectricalProperties of Laser Ablated SiBi2Ta2O9 Thin Films 101

Rasmi R. Das, W. Perez, P. Bhattacharya, and Ram S. Katiyar

Synthesis and Ferroelectric Properties of Sr- and Nb-codopedBi4.xSrxTi3.xNbxO12 Thin Films by Sol-Gel Method 107

Hirofumi Matsuda, Takashi Iijima, Hiroshi Uchida, andIsao Okada

Effect of Capacitor Configuration on Oxygen-DependentElectrical Properties of Ferroelectric Pb(Zr,Ti)O3 Thin Films 113

M.A. McCormick, E.B. Slamovich, P. Metcalf, andM. McElfresh

Improvement of Surface Crystalline Quality of an Epitaxial(100)ZrN Film as a Bottom Electrode Diffusion Barrier forFerroelectric Capacitors 119

Susumu Horita, Sadayoshi Horii, and Takeo Toda

Characterization of (Ba,Sr)RuO3 Films Deposited byMetal-Organic Chemical Vapor Deposition 125

Duck-Kyun Choi, Joong-Seo Kang, Young-Bae Kim,Duck-Hwa Hong, Hyun-Chul Kim, Sung-Tae Kim, andCha- Young Yoo

INTEGRATION AND ELECTRODES

Investigation of the Role of Carbonylchemistry to PatternPlatinum Electrodes 133

St. Schneider, H. Kohlstedt, and R. Waser

Thermal Stability and Electrical Properties of RhO2 Thin Films 139Yoshio Abe, Kiyohiko Kato, Midori Kawamura, andKatsutaka Sasaki

Fabrication and Characterization of a PZT Thin FilmActuator for a Micro Electromechanical Switch Application 145

Marcus Hoffmann, Timm Leuerer, Clemens Kruger,Ulrich Bottger, Wilfried Mokwa, and Rainer Waser

vn






EPITAXIAL FERROELECTRIC FILMS

Preparation and Characterization of a- and b-Axis-OrientedEpitaxially Grown Bi4Ti3Oi2-Based Thin Films onRutile-Type Oxides 155

Takayuki Watanabe, Keisuke Saito, Minoru Osada, andHiroshi Funakubo

* Size Effects on Polarization in Epitaxial Ferroelectric Filmsand the Concept of Ferroelectric Tunnel Junctions IncludingFirst Results 161

H. Kohlstedt, N.A. Pertsev, and R. Waser

Functional Behavior of Thin Film Dielectric Superlattices 173J.M. Gregg, M.H. Corbett, D. O'Neill, G. Catalan, andR.M. Bowman

POSTER SESSION

PZT and PMN-PT Thin Film Cantilevers: ComparisonBetween Monomorph and Bimorph Structures 181

Marcus Hoffmann, Carsten Kiigeler, Ulrich Bottger, andRainer Waser

High-Temperature Dielectric Properties of Sol-Gel DerivedThick PZT Thin Films With Different Zr/Ti Atom Ratios 187

Jinrong Cheng, Wenyi Zhu, Nan Li, and L. Eric Cross

Interdigital Ag(Ta,Nb)O3 Thin Film Capacitors on Sapphire 193Jung-Hyuk Koh, Alex Grishin, Akira Shibuya, andMasanori Okuyama

RF-Magnetron Sputtered Au/(Na,K)NbO3/SiO2/SiMFIS-Diode Structures 199

Akira Shibuya, Jung-Hyuk Koh, Alex Grishin, Veronika Kugler,Denis Music, Ulf Helmersson, and Masanori Okuyama

Process Induced Modification of the High Frequency DielectricBehavior of (100) Textured BaxSr!_xTiO3 (x = 0.5 and 0.6) Thin Films 205

S.B. Majumder, M. Jain, A. Martinez, R.S. Katiyar,E.R. Fachini, F.W. Van Keuls, F.A. Miranda, P.K. Sahoo,and V.N. Kulkarni

* Invited Paper

vm






Reactive Coevaporation of SrTiO3 Thin Films for TunableMicrowave Devices 211

Luke S.-J. Peng, Nina F. Heinig, and Brian H. Moeckly

Microwave Properties of Strontium Barium NiobateThin Films Grown by Pulsed Laser Deposition 217

Victor Rodriguez-Santiago, Yelitza Gonzalez, Felix E. Fernandez,Carl H. Mueller, Fred W. Van Keuls, and Felix A. Miranda

Pyroelectric Properties of Alanine Doped TGS SingleCrystalline Thick Films Under Constant Electric Stress 223

Lucian Pintilie, Ion Matei, Ioana Pintilie,Horia V. Alexandru, and Ciceron Berbecaru

Infrared Spectroscopy of Epitaxial Antimony Sulpho IodideThin Films 229

S. Kotru, S. Surthi, R.K. Pandey, and D. Donnelly

Direct Nanoscale Observation of Size Effect on PolarizationInstability in Pb(Zr,Ti)O3 Film Capacitors 235

Igor Stolichnov, Enrico Colla, Alexander Tagantsev,Seungbum Hong, Nava Setter, Jeffrey S. Cross, andMineharu Tsukada

Analysis of Alternating Current Conduction and ImpedanceSpectroscopy Study of BaBi2Nb2O9 Thin Films 241

Apurba Laha, S. Saha, and S.B. Krupanidhi

Simulation of the Variability in Next-GenerationMicroelectronic Capacitors With Polycrystalline Dielectrics 247

Jesse L. Cousins and David E. Kotecki

Crystallization of BaTiO3 Thin Films Prepared byMetalorganic Decomposition With Hydrothermal Treatmentatl40°C 253

Zhiqiang Wei, Minoru Noda, and Masanori Okuyama

Impact of Template Layers on Dielectric and ElectricalProperties of Pulsed-Laser Ablated Pb(Mgi/3Nb2/3)O3-PbTiO3

Thin Films 259Apurba Laha, S. Saha, and S.B. Krupanidhi

Microstructural and Dielectrical Properties for Ceramics andThin Films of the xPbTiO3-(l-x)SrTiO3 Solid Solution 265

E. Martinez, A. Fundora, O. Blanco, S. Garcia, E. Heredia,and J.M. Siqueiros

ix






Compositional Disorder Induced Relaxor Behavior of(PbLa)TiO3 Thin Films 271

S. Bhaskar, S.B. Majumder, and R.S. Katiyar

EPITAXIAL FERROELECTRIC FILMS

Ferroelectic BaTiO3 Thin Film Optical Waveguide Modulators 279A. Petraru, M. Siegert, M. Schmid, J. Schubert, andCh. Buchal

Initial Growth Stages of Epitaxial BaTiO3 Films on VicinalSrTiO3:Nb (001) Substrates 285

A. Visinoiu, M. Alexe, H.N. Lee, D.N. Zakharov,A. Pignolet, D. Hesse, and U. Gosele

Structure and Morphology of Epitaxially Intergrown (100)-and (116)-Oriented SrBi2Ta2O9 Ferroelectric Thin Films onSrLaGaO4(l 10) Substrates 291

H.N. Lee, D.N. Zakharov, P. Reiche, R. Uecker, andD. Hesse

Fabrication and Properties of Epitaxial Lithium Niobate ThinFilms by Combustion Chemical Vapor Deposition (CCVD) 297

Yong Dong Jiang, Jake McGee, Todd A. Polley,Robert E. Schwerzel, and Andrew T. Hunt

Structural and Ferroelectric Properties of EpitaxialPbZro.52Tio.4803 and BaTiO3 Thin Films Prepared onSrRu63/SrTiO3(100) Substrates 303

J. Rodriguez Contreras, J. Schubert, U. Poppe,O. Trithaveesak, K. Szot, Ch. Buchal, H. Kohlstedt, andR. Waser

Growth and Electrical Properties of Fe doped (Ba,Sr)TiO3

Thin Films Deposited by Pulsed Laser Deposition 309Yoshiyuki Yonezawa, Megumi Kato, Yoshinori Konishi,Shizuyasu Yoshida, Nobuhiro Okuda, Takahiko Maeda,Ryohei Tanuma, Michio Ohsawa, Hideaki Matsuyama,Shinji Ogino, Naoto Fujishima, Akinori Matsuda,Noboru Furusyo, Toyohiro Chikyow, Masashi Kawasaki, andHideomi Koinuma






DOMAINS AND NANOSTRUCTURES

* Local Polarization, Charge Compensation, and ChemicalInteractions on Ferroelectric Surfaces: A Route Toward NewNanostructures ~..317

Dawn A. Bonnell and Sergei V. Kalinin

Higher Order Nonlinear Dielectric Microscopy 329Yasuo Cho and Koya Ohara

PIEZOELECTRICS ANDPYROELECTRICS

Dielectric and Electromechanical Behavior of Relaxor[(l-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3] Thin Films 337

NJ. Donnelly, G. Catalan, C. Morros, R.M. Bowman, andJ.M. Gregg

* Ferroelectric and Displacement Properties of Lead ZirconateTitanate Thick Films Prepared by Chemical SolutionDeposition Process 343

Takashi Iijima, Yoshinori Hayashi, and Jun Onagawa

Compositional Effects on the Piezoelectric and FerroelectricProperties of Chemical Solution Deposited PZT Thin Films 351

Dong-Joo Kim, Jon-Paul Maria, and Angus I. Kingon

Micro-Machined Pyroelectric Infrared Detector Based on Sol-GelDerived Pb(Zr0jTio.7)03/PbTi03 Multilayer Thin Films 357

Ling Ling Sun, Wei Guo Liu, Ooi Kiang Tan, andWei Guang Zhu

FERROELECTRIC GATES

Epitaxial Growth of LaVO3/(Ba,Sr)TiO3/(Pb J,a)(Zr Ji)03/(La,Sr)Co03

Semiconductor/Ferroelectric/Conductor Heterostructures 365Woong Choi and Tim Sands

Integration Processes and Properties of Pt/Pb5Ge3Oii/(Zr,Hf)O2/SiOne Transistor Memory Devices 371

Tingkai Li, Sheng Teng Hsu, Bruce Ulrich, and Lisa Stecker

* Invited Paper

XI






Al2O3/Si3N4 Buffer Layer for High Performance MFIS(Metal-Ferroelectric-Insulator-Semiconductor) Transistors 377

Yoshihisa Fujisaki and Hiroshi Ishiwara

A Study of Charge Control and Gate Tunneling in aFerroelectric-Oxide-Silicon Field Effect Transistor 383

Yih-Yin Lin, Yifei Zhang, and Jasprit Singh

THIN FILMS FORRF APPLICATIONS

Raman Studies of the Soft Phonon Modes in BaxSri_xTiO3

Thin Films 391D.A. Tenne, A.M. Clark, A.R. James, A. Soukiassian,K. Chen, and X.X. Xi

HIGH-PERMITTIVITY MATERIALS

Probing the Dead Layer in Barium Strontium TitanateCapacitors Made by Pulsed Laser Deposition 399

LJ. Sinnamon, R.M. Bowman, and J.M. Gregg

Thickness Dependence of Leakage Current Behavior inEpitaxial (Ba,Sr)TiO3 Thin Films 405

Kun Ho Ahn, Sang Sub Kim, and Sunggi Baik

SYMPOSIUM K PAPER

Erbium-Doped Barium Titanate Thin Film Waveguides ForIntegrated Optical Amplifiers 413

Andrew R. Teren, Seong-Soo Kim, Seng-Tiong Ho, andBruce W. Wessels

Author Index .....419

Subject Index 423

xn






PREFACE

This symposium, "Ferroelectric Thin Films X," held November 25-29 at the 2001 MRSFall Meeting in Boston, Massachusetts, was the tenth in a series of highly successful MRSsymposia on ferroelectric thin films. During this year's symposium, substantial progress inseveral areas of integrated ferroelectric and high-permittivity device technology wasdemonstrated. In particular, the latest developments in high-density FeRAM devices werereviewed, in addition to recent developments in the use of these films in piezoelectric,pyroelectric, tunable RF, integrated capacitor, and optical waveguide applications. Othersessions focused on the thin film processing techniques used to deposit a variety offerroelectric and electrode materials. And finally, several topical sessions focused on recentadvances in the fundamental understanding of ferroelectricity and degradation phenomena inthin films. As evidenced by the awarding of a Poster Award by the Fall Meeting chairs for thesecond year in a row, this symposium continues to receive excellent technical contributions.

Since the first symposium in this series was held at the 1990 MRS Spring Meeting, there hasbeen a steady increase in paper submissions and attendance. Consistent with past years, thesymposium was also characterized by a diverse mix of excellent presentations from NorthAmerica, Europe, and Asia. Approximately 180 abstracts were submitted this year, asignificant increase over last year and consistent with previous ferroelectric thin filmssymposia. In addition, both the oral and poster presentations were very well attended. Oralpresentations were held over four days, and poster sessions were held on two evenings. A jointsession with Symposium O, "Complex Oxide Heteroepitaxy," was also held.

The strong and ever increasing interest in ferroelectric thin films, both domestically andinternationally, continues unabated, and demonstrates the growing technological and scientificimportance of this class of materials. This proceedings volume presents the latest technicalinformation on ferroelectric thin films from academia, government laboratories, and industry.A number of emerging technological trends are highlighted, along with advancements madeover the course of the previous 12 months since the last ferroelectric thin films symposiumwas held at the 2000 MRS Fall Meeting.

Stephen R. GilbertSusan Trolier-McKinstryYoichi MiyasakaStephen K. StreifferDirk J. Wouters

March 2002











ACKNOWLEDGMENTS

The symposium chairs are pleased to acknowledge the contributing and invited authors forthe outstanding quality of their presentations and proceedings manuscripts. The invitedspeakers included:

D.A. Bonnell J.-P. MariaG. Fox P.C. MclntyreH. Funakubo C. RandallM. Grossmann A. SeifertT. Iijima N. SetterH. Kohlstedt S.R. Summerfelt

We are also pleased to acknowledge the following poster presenter who received an MRSPoster Award from the 2001 Fall Meeting chairs:

Ho Nyung Lee et al. (Max-Planck Institute, Halle, Germany)

The symposium chairs are also indebted to the session chairs for their efforts in overseeingthe sessions, guiding subsequent discussions, and for assisting with the review of the proceedingsmanuscripts:

S. Aggarwal P.C. MclntyreH. Funakubo P. MuraltM. Grossmann C. RandallS. Hoffmann-Eifert N. SetterD. Kaufman D.G. SchlomA. Kingon M. ShimizuJ.-P. Maria S.R. Summerfelt

The chairs also wish to express their gratitude to the following organizations for providingfinancial support, enabling us to present the "Ferroelectric Thin Films X" symposium:

Aixtron AGKojundo Chemical Laboratories Co., Ltd.

NEC CorporationULVAC, Ltd.

Finally, we extend special thanks to the Materials Research Society staff, as well as the2001 Fall Meeting chairs, for developing yet another outstanding conference.






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Volume 664— Amorphous and Heterogeneous Silicon-Based Films—2001, M. Stutzmann, J.B. Boyce,J.D. Cohen, R.W. Collins, J. Hanna, 2001, ISBN: 1-55899-600-1

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Volume 688— Ferroelectric Thin Films X, S.R. Gilbert, Y. Miyasaka, D. Wouters, S. Trolier-McKinstry,S.K. Streiffer, 2002, ISBN: 1-55899-624-9






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ISBN: 1-55899-642-7Volume 707— Self-Assembly Processes in Materials, S. Moss, 2002, ISBN: 1-55899-643-5Volume 708— Organic and Optoelectronic Materials, Processing and Devices, S. Moss, 2002,

ISBN: 1-55899-644-3Volume 709— Advances in Liquid Crystalline Materials and Technologies, P.T. Mather, D.J. Broer, T.J. Bunning,

D.M. Walba, R. Zentel, 2002, ISBN: 1-55899-645-1Volume 710— Polymer Interfaces and Thin Films, C.W. Frank, 2002, ISBN: 1-55899-646-XVolume 711— Advanced Biomaterials—Characterization, Tissue Engineering and Complexity, 2002,

ISBN: 1-55899-647-8Volume 712— Materials Issues in Art and Archaeology VI, P.B. Vandiver, M. Goodway, J.R. Druzik, J.L. Mass,

2002, ISBN: 1-55899-648-6Volume 713— Scientific Basis for Nuclear Waste Management XXV, B.P. McGrail, G.A. Cragnolino, 2002,

ISBN: 1-55899-649-4Volume 714E—Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics II,

S. Lahiri, 2002, ISBN: 1-55899-650-8

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society






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Ferroelectric Thin F ilms X - Cambridge University Pressassets.cambridge.org/97811074/12118/frontmatter/9781107412118... · MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUM