EFE1Power semiconductors

Mohan chap. 2T-484 chap. 10

J.Nybo14.02.05

Rev. 16.02.05

Side 2

Diodes

Recovery time

PT

v t i t d tT

V i t d tVT

Qtabs s

d rd r

ss

t

1 1

0

( ) ( ) ( )

Side 3

Diode types

• Schottky: Vf = 0.4- 0.6V, Vr = 50-100V

• Fast- recovery: Vr: in 100’s V, If: in 100’sA

• Line-frequency: Vf: 0.8-1.0V, Vr: in KV, If: in KA

Side 4

Side 5

Side 6

Overview

Side 7

Desired switch characteristics

Side 8

Bipolar junction transistors

Side 9

Darlington gain

Side 10

Storage delay

Side 11

Side 12

Side 13

Metal Oxide Semiconductor (MOSFET)

Possitive R-on temp. coefficients, makes it easy to parallel MOSFET’s

Side 14

Current rise timeMillercapacitor

Side 15

Voltage rise time

Side 16

Driver power

Side 17

Side 18

Side 19

Side 20

Insulated Gate Bipolar Transistor (IGBT)

Side 21

IGBT characteristics

Side 22

Side 23

Side 24

Side 25