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Silicon RF Power Semiconductors
Application Note for Silicon RF Power Semiconductors
1/16
APPLICATION NOTEDocument No. AN-VHF-034-C
Date : 10th Feb. 2006Rev. date : 22 th Dec. 2010Prepared: S.Nakatsuka
S.KametaniConfirmed: T.Okawa
(Taking charge of Silicon RF byMIYOSHI Electronics)
SUBJECT: RD12MVP1 single-stage amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V
SUMMARY:
This application note shows the RF characteristics (Frequency Characteristics, Pin vs. Pout
characteristics and Vdd vs. Pout characteristics) data of RD12MVP1 using Broad-Band Test Fixture.
- Sample history:
RD12MVP1: Lot number “107AF-G0”
- Evaluate conditions:
Frequency Characteristics @f=135 to 175MHz: Pin=1.0/0.7/0.5/0.3W,Vdd=7.2V, Idq=1.0A (Vgg adj.)
Pin vs. Pout Characteristics @ f=135/155/175MHz: Vdd=7.2V, Idq=0.7/1.0A (Vgg adj.)
Vdd vs. Pout Characteristics @ f=135/155/175MHz: Pin=1.0W, Vdd=6 to 10V, Idq=1.0A (Vgg adj.)
- Results:
Page 2 to 5 shows the 135 to 175MHz Frequency Characteristics data.
Page 6 to 11 shows the Pin vs. Pout Characteristics data.
Page 12 to 14 shows the Vdd vs. Pout Characteristics data.
Page 15 to 16 shows the Broad-band Equivalent Circuit.
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
2/16
RD12MVP1 Frequency Characteristics (@ f=135～175MHz Broad-band Fixture; Pin=1.0W)
Vdd=7.2V,Vgg=4.87V,Idq=1.0A,Pin=1.0Wf Gp Idd ηT R.L. 2fo 3fo
[MHz] [dBm] [W] [dB] [A] [%] [dB] [dBc] [dBc]130 39.1 8.1 9.1 1.883 59.7 -2.1 -25.2 -46.5132 39.2 8.2 9.2 1.868 61.2 -2.3 -25.8 -47.7134 39.2 8.3 9.2 1.843 62.6 -2.4 -27.4 -49.1136 39.2 8.3 9.2 1.808 64.1 -2.7 -28.3 -49.4138 39.2 8.3 9.2 1.770 65.1 -2.9 -28.8 -50.6140 39.2 8.3 9.2 1.733 66.4 -3.2 -29.5 -51.9142 39.1 8.2 9.1 1.695 67.2 -3.6 -29.9 -53.2144 39.1 8.1 9.1 1.653 67.8 -4.0 -31.0 -54.2146 39.0 7.9 9.0 1.610 68.4 -4.6 -31.6 -55.5148 38.9 7.8 8.9 1.573 68.8 -5.3 -32.7 -56.7150 38.9 7.7 8.9 1.538 69.5 -6.2 -33.0 -57.1152 38.8 7.6 8.8 1.510 69.8 -7.3 -34.1 -60.0154 38.8 7.5 8.8 1.488 70.1 -8.7 -34.5 -61.2156 38.7 7.5 8.7 1.468 70.6 -10.5 -35.4 -62.3158 38.7 7.4 8.7 1.455 70.7 -13.1 -35.7 -65.1160 38.7 7.4 8.7 1.443 71.1 -17.0 -36.2 -65.8162 38.7 7.4 8.7 1.438 71.2 -24.4 -37.1 -68.5164 38.7 7.4 8.7 1.438 71.0 -32.0 -37.7 -68.2166 38.7 7.4 8.7 1.448 70.9 -19.7 -39.2 -65.1168 38.7 7.5 8.7 1.470 70.5 -14.8 -39.4 -61.8170 38.8 7.5 8.8 1.503 69.6 -11.9 -40.4 -59.7172 38.8 7.7 8.8 1.545 68.9 -9.9 -41.2 -55.6174 38.9 7.8 9.0 1.598 68.0 -8.4 -41.8 -53.9176 39.0 8.0 9.0 1.660 66.9 -7.2 -43.0 -54.0178 39.1 8.1 9.1 1.730 65.3 -6.2 -42.6 -55.2180 39.2 8.3 9.2 1.795 64.0 -5.5 -43.4 -57.1
Po
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
130 135 140 145 150 155 160 165 170 175 180
freq[MHz]
Pout[W],Gp[dB]
0
10
20
30
40
50
60
70
80
90
100
ηt[%],
ηt
Pout
Gp
-80
-70
-60
-50
-40
-30
-20
-10
0
130 135 140 145 150 155 160 165 170 175 180
freq[MHz]R.Loss[dB],Harmonic[dBc]
2fo
R.Loss
3fo
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
3/16
RD12MVP1 Frequency Characteristics (@ f=135～175MHz Broad-band Fixture; Pin=0.7W)
Vdd=7.2V,Vgg=4.87V,Idq=1.0A,Pin=0.7Wf Gp Idd ηT R.L. 2fo 3fo
[MHz] [dBm] [W] [dB] [A] [%] [dB] [dBc] [dBc]130 38.9 7.7 10.4 1.865 57.4 -2.1 -25.9 -46.9132 39.0 7.9 10.5 1.850 59.1 -2.2 -25.7 -47.5134 39.0 8.0 10.6 1.828 60.6 -2.4 -27.1 -48.7136 39.1 8.1 10.6 1.795 62.3 -2.6 -28.4 -49.8138 39.1 8.0 10.6 1.758 63.6 -2.8 -28.9 -50.6140 39.1 8.1 10.6 1.725 65.2 -3.1 -29.6 -52.3142 39.0 8.0 10.6 1.690 66.1 -3.5 -30.2 -53.5144 39.0 7.9 10.5 1.648 66.7 -3.9 -31.2 -54.5146 38.9 7.8 10.5 1.605 67.2 -4.5 -31.5 -55.1148 38.8 7.7 10.4 1.565 67.9 -5.2 -32.4 -56.9150 38.8 7.6 10.3 1.533 68.5 -6.0 -33.3 -57.6152 38.7 7.5 10.3 1.505 68.9 -7.1 -34.0 -59.3154 38.7 7.4 10.3 1.480 69.4 -8.5 -35.1 -61.0156 38.7 7.3 10.2 1.463 69.8 -10.4 -35.2 -62.8158 38.6 7.3 10.2 1.445 70.1 -13.0 -35.9 -65.2160 38.6 7.3 10.2 1.433 70.4 -17.0 -35.9 -68.9162 38.6 7.3 10.1 1.428 70.5 -24.7 -37.2 -68.9164 38.6 7.2 10.1 1.430 70.3 -30.2 -37.9 -66.8166 38.6 7.3 10.2 1.440 70.1 -19.2 -39.2 -64.5168 38.7 7.3 10.2 1.460 69.7 -14.5 -39.6 -62.2170 38.7 7.4 10.2 1.490 69.0 -11.6 -40.6 -59.6172 38.8 7.5 10.3 1.533 68.1 -9.6 -41.3 -56.3174 38.8 7.6 10.4 1.583 67.1 -8.1 -42.2 -55.1176 38.9 7.8 10.5 1.645 65.8 -7.0 -43.0 -54.5178 39.0 7.9 10.5 1.708 64.4 -6.1 -42.7 -54.9180 39.0 8.0 10.6 1.773 62.8 -5.3 -43.7 -57.5
Po
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
130 135 140 145 150 155 160 165 170 175 180
freq[MHz]
Pout[W],Gp[dB]
0
10
20
30
40
50
60
70
80
90
100
ηt[%],
ηt
Pout
Gp
-80
-70
-60
-50
-40
-30
-20
-10
0
130 135 140 145 150 155 160 165 170 175 180
freq[MHz]R.Loss[dB],Harmonic[dBc]
2fo
R.Loss
3fo
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
4/16
RD12MVP1 Frequency Characteristics (@ f=135～175MHz Broad-band Fixture; Pin=0.5W)
Vdd=7.2V,Vgg=4.87V,Idq=1.0A,Pin=0.5Wf Gp Idd ηT R.L. 2fo 3fo
[MHz] [dBm] [W] [dB] [A] [%] [dB] [dBc] [dBc]130 38.6 7.2 11.6 1.843 54.3 -2.0 -25.5 -46.6132 38.7 7.4 11.7 1.830 56.2 -2.2 -26.2 -48.0134 38.8 7.6 11.8 1.810 58.1 -2.3 -27.4 -49.2136 38.9 7.7 11.9 1.780 60.1 -2.5 -28.2 -50.0138 38.9 7.8 11.9 1.748 61.8 -2.8 -29.1 -50.9140 39.0 7.9 12.0 1.718 63.7 -3.0 -29.7 -52.3142 38.9 7.8 11.9 1.685 64.4 -3.4 -29.9 -52.8144 38.9 7.7 11.9 1.643 65.2 -3.8 -31.2 -55.0146 38.8 7.6 11.8 1.600 65.9 -4.4 -31.8 -56.0148 38.7 7.5 11.7 1.560 66.5 -5.1 -33.0 -57.6150 38.7 7.4 11.7 1.525 67.3 -5.9 -33.1 -57.6152 38.6 7.3 11.6 1.495 67.7 -7.1 -33.9 -58.8154 38.6 7.2 11.6 1.470 68.0 -8.5 -34.7 -61.4156 38.5 7.1 11.5 1.448 68.5 -10.4 -35.4 -62.4158 38.5 7.1 11.5 1.430 68.8 -13.1 -36.1 -66.1160 38.5 7.1 11.5 1.418 69.1 -17.2 -36.3 -66.9162 38.5 7.0 11.5 1.413 69.2 -25.5 -37.0 -66.7164 38.5 7.0 11.5 1.410 69.1 -27.0 -38.3 -66.7166 38.5 7.0 11.5 1.420 68.8 -18.1 -39.4 -66.6168 38.5 7.1 11.5 1.440 68.5 -13.8 -39.8 -62.4170 38.5 7.1 11.6 1.470 67.5 -11.1 -40.7 -59.7172 38.6 7.2 11.6 1.510 66.6 -9.2 -41.7 -56.1174 38.7 7.4 11.7 1.558 65.6 -7.8 -42.1 -54.4176 38.7 7.5 11.7 1.615 64.3 -6.7 -43.1 -54.7178 38.8 7.6 11.8 1.675 62.7 -5.8 -43.0 -55.3180 38.8 7.6 11.8 1.738 60.9 -5.1 -43.9 -57.5
Po
0
2
4
6
8
10
12
14
16
18
20
130 135 140 145 150 155 160 165 170 175 180
freq[MHz]
Pout[W],Gp[dB]
0
10
20
30
40
50
60
70
80
90
100
ηt[%],
ηt
Pout
Gp
-80
-70
-60
-50
-40
-30
-20
-10
0
130 135 140 145 150 155 160 165 170 175 180
freq[MHz]R.Loss[dB],Harmonic[dBc]
2fo
R.Loss
3fo
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
5/16
RD12MVP1 Frequency Characteristics (@ f=135～175MHz Broad-band Fixture; Pin=0.3W)
Vdd=7.2V,Vgg=4.87V,Idq=1.0A,Pin=0.3Wf Gp Idd ηT R.L. 2fo 3fo
[MHz] [dBm] [W] [dB] [A] [%] [dB] [dBc] [dBc]130 38.0 6.3 13.2 1.790 48.7 -2.0 -25.9 -46.8132 38.1 6.5 13.4 1.783 50.7 -2.1 -26.1 -47.9134 38.3 6.7 13.5 1.770 52.7 -2.3 -27.5 -49.3136 38.4 7.0 13.6 1.745 55.5 -2.5 -28.1 -49.5138 38.6 7.2 13.8 1.723 57.8 -2.7 -29.1 -50.8140 38.7 7.4 13.9 1.705 60.7 -2.9 -30.0 -52.5142 38.7 7.5 14.0 1.680 61.8 -3.2 -30.5 -53.7144 38.7 7.4 13.9 1.640 62.5 -3.7 -31.2 -55.0146 38.6 7.3 13.9 1.595 63.4 -4.3 -31.9 -55.8148 38.6 7.2 13.8 1.555 64.3 -5.0 -33.0 -57.5150 38.5 7.1 13.8 1.518 65.3 -5.9 -33.7 -57.9152 38.5 7.1 13.7 1.488 65.9 -7.1 -34.2 -60.1154 38.5 7.0 13.7 1.460 66.7 -8.6 -34.6 -60.8156 38.4 7.0 13.7 1.438 67.4 -10.7 -35.4 -63.5158 38.4 6.9 13.6 1.420 67.5 -13.8 -36.2 -65.2160 38.4 6.9 13.6 1.405 68.0 -18.7 -36.5 -68.5162 38.4 6.9 13.6 1.398 68.1 -27.3 -37.2 -68.5164 38.3 6.8 13.6 1.398 67.9 -21.4 -38.1 -66.5166 38.3 6.8 13.6 1.403 67.7 -15.5 -39.4 -65.5168 38.4 6.9 13.6 1.420 67.1 -12.1 -40.0 -63.4170 38.4 6.9 13.6 1.448 65.9 -9.8 -40.8 -61.2172 38.4 6.9 13.7 1.483 64.8 -8.2 -41.7 -57.0174 38.4 7.0 13.6 1.525 63.6 -7.0 -42.4 -54.7176 38.5 7.0 13.7 1.575 62.0 -6.0 -43.4 -54.8178 38.5 7.0 13.7 1.628 59.9 -5.2 -43.2 -56.5180 38.4 7.0 13.7 1.680 57.8 -4.6 -44.4 -58.4
Po
0
2
4
6
8
10
12
14
16
18
20
130 135 140 145 150 155 160 165 170 175 180
freq[MHz]
Pout[W],Gp[dB]
0
10
20
30
40
50
60
70
80
90
100
ηt[%],
ηt
Pout
Gp
-80
-70
-60
-50
-40
-30
-20
-10
0
130 135 140 145 150 155 160 165 170 175 180
freq[MHz]R.Loss[dB],Harmonic[dBc]
2fo
R.Loss
3fo
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
6/16
RD12MVP1 Pin vs. Pout Characteristics (@ f=135MHz;Idq=1.0A)
f=135MHz,Vdd=7.2V,Vgg=4.87V,Idq=1.0APin Pin Po Po Gp Idd ηT R.L. 2fo 3fo
[dBm] [W] [dBm] [W] [dB] [A] [%] [dB] [dBc] [dBc]0.0 0.001 21.9 0.16 21.9 1.02 2.1 -2.4 -45.7 -2.0 0.002 23.9 0.24 21.9 1.03 3.3 -2.5 -44.7 -4.0 0.003 25.8 0.38 21.8 1.04 5.1 -2.5 -42.5 -6.0 0.004 27.7 0.59 21.7 1.06 7.7 -2.6 -40.7 -8.0 0.006 29.5 0.90 21.5 1.09 11.4 -2.7 -38.9 -10.0 0.010 31.3 1.34 21.3 1.14 16.4 -2.7 -36.6 -11.9 0.016 32.8 1.90 20.9 1.20 22.0 -2.8 -34.4 -58.414.0 0.025 34.1 2.59 20.1 1.29 28.0 -2.9 -32.4 -56.016.0 0.040 35.2 3.27 19.1 1.39 32.8 -2.9 -30.9 -53.818.0 0.063 36.0 3.98 18.0 1.49 37.2 -2.8 -29.6 -52.520.0 0.100 36.8 4.75 16.8 1.59 41.6 -2.7 -28.4 -51.322.0 0.158 37.5 5.67 15.5 1.68 46.8 -2.4 -28.3 -50.524.0 0.250 38.1 6.50 14.1 1.74 51.8 -2.4 -27.7 -49.826.0 0.399 38.6 7.26 12.6 1.79 56.5 -2.4 -27.6 -49.528.0 0.627 38.9 7.83 11.0 1.81 60.1 -2.5 -27.8 -49.530.0 0.992 39.2 8.24 9.2 1.83 62.6 -2.5 -27.8 -49.732.0 1.588 39.3 8.52 7.3 1.84 64.3 -2.6 -27.6 -49.4
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30
Pin[dBm]
Pout[dBm],Gp[dB]
0
10
20
30
40
50
60
70
80
ηt[%]
ηt
Pout
Gp
0
1
2
3
4
5
6
7
8
9
10
0.0 0.2 0.4 0.6 0.8 1.0
Pin[W]
Pout[W],Idd[A]
0
10
20
30
40
50
60
70
80
90
100
ηt[%]
ηt
Pout
Idd
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
7/16
RD12MVP1 Pin vs. Pout Characteristics (@ f=155MHz=1.0A)
f=155MHz,Vdd=7.2V,Vgg=4.87V,Idq=1.0APin Pin Po Po Gp Idd ηT R.L. 2fo 3fo
[dBm] [W] [dBm] [W] [dB] [A] [%] [dB] [dBc] [dBc]0.0 0.001 25.0 0.31 25.0 1.05 4.2 -18.4 -51.6 -2.0 0.002 26.9 0.49 24.9 1.06 6.4 -13.6 -49.1 -4.0 0.003 28.8 0.76 24.8 1.08 9.7 -14.6 -47.5 -6.0 0.004 30.6 1.14 24.6 1.10 14.4 -14.6 -45.8 -8.0 0.006 32.3 1.70 24.3 1.13 20.8 -14.6 -43.7 -10.0 0.010 33.8 2.41 23.8 1.18 28.4 -14.4 -41.8 -12.0 0.016 35.1 3.22 23.0 1.23 36.4 -14.4 -39.8 -14.0 0.025 36.1 4.08 22.1 1.28 44.1 -14.6 -38.1 -65.916.0 0.040 36.9 4.88 20.9 1.34 50.7 -14.5 -36.7 -64.418.0 0.064 37.5 5.60 19.4 1.38 56.3 -13.2 -36.1 -64.420.0 0.100 37.9 6.14 17.9 1.41 60.6 -11.5 -35.7 -63.122.0 0.159 38.2 6.55 16.1 1.43 63.7 -10.3 -35.2 -63.324.0 0.250 38.3 6.82 14.4 1.44 65.8 -9.7 -34.9 -62.426.0 0.398 38.5 7.04 12.5 1.45 67.3 -9.4 -35.2 -62.228.0 0.631 38.6 7.23 10.6 1.46 68.7 -9.4 -34.7 -62.230.0 1.000 38.7 7.35 8.7 1.47 69.5 -9.5 -34.4 -61.732.0 1.570 38.7 7.47 6.8 1.48 70.2 -9.8 -34.7 -62.1
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30
Pin[dBm]
Pout[dBm],Gp[dB]
0
10
20
30
40
50
60
70
80
ηt[%]
ηt
Pout
Gp
0
1
2
3
4
5
6
7
8
9
10
0.0 0.2 0.4 0.6 0.8 1.0
Pin[W]
Pout[W],Idd[A]
0
10
20
30
40
50
60
70
80
90
100
ηt[%]
ηt
Pout
Idd
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
8/16
RD12MVP1 Pin vs. Pout Characteristics (@ f=175MHz=1.0A)
f=175MHz,Vdd=7.2V,Vgg=4.87V,Idq=1.0APin Pin Po Po Gp Idd ηT R.L. 2fo 3fo
[dBm] [W] [dBm] [W] [dB] [A] [%] [dB] [dBc] [dBc]0.0 0.001 20.8 0.12 20.8 1.05 1.6 -5.1 - -2.0 0.002 22.8 0.19 20.8 1.06 2.5 -5.2 - -4.0 0.003 24.7 0.30 20.7 1.07 3.9 -5.3 - -6.0 0.004 26.7 0.46 20.7 1.08 6.0 -5.2 -57.0 -8.0 0.006 28.5 0.71 20.5 1.09 9.0 -5.2 -56.4 -10.0 0.010 30.3 1.08 20.3 1.11 13.4 -5.1 -53.6 -12.0 0.016 32.0 1.59 20.0 1.15 19.3 -4.9 -52.6 -14.0 0.025 33.6 2.28 19.5 1.19 26.6 -4.8 -50.1 -16.0 0.040 35.0 3.14 19.0 1.25 34.9 -4.6 -47.9 -61.218.0 0.063 36.1 4.12 18.2 1.32 43.2 -4.6 -45.9 -59.820.0 0.100 37.1 5.15 17.1 1.40 51.1 -4.8 -44.5 -57.922.0 0.160 37.8 6.07 15.8 1.47 57.2 -5.4 -43.3 -55.724.0 0.253 38.3 6.72 14.3 1.53 61.1 -6.2 -42.6 -54.826.0 0.402 38.6 7.20 12.5 1.57 63.7 -6.9 -42.1 -53.828.0 0.631 38.8 7.52 10.8 1.60 65.3 -7.4 -42.2 -53.930.0 1.004 38.9 7.76 8.9 1.62 66.6 -7.7 -42.1 -53.632.0 1.569 39.0 7.94 7.0 1.64 67.4 -7.8 -42.0 -53.2
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30
Pin[dBm]
Pout[dBm],Gp[dB]
0
10
20
30
40
50
60
70
80
ηt[%]
ηt
Pout
Gp
0
1
2
3
4
5
6
7
8
9
10
0.0 0.2 0.4 0.6 0.8 1.0
Pin[W]
Pout[W],Idd[A]
0
10
20
30
40
50
60
70
80
90
100
ηt[%]ηt
Pout
Idd
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
9/16
RD12MVP1 Pin vs. Pout Characteristics (@ f=135MHz;Idq=0.7A)
f=135MHz,Vdd=7.2V,Vgg=4.87V,Idq=0.7APin Pin Po Po Gp Idd ηT R.L. 2fo 3fo
[dBm] [W] [dBm] [W] [dB] [A] [%] [dB] [dBc] [dBc]0.0 0.001 20.2 0.10 20.2 0.71 2.0 -2.0 -42.7 -2.0 0.002 22.1 0.16 20.1 0.72 3.1 -2.1 -41.0 -4.0 0.003 24.1 0.25 20.1 0.74 4.8 -2.2 -39.9 -6.0 0.004 25.9 0.39 19.9 0.76 7.2 -2.2 -37.9 -8.0 0.006 27.7 0.60 19.8 0.79 10.5 -2.2 -35.7 -
10.0 0.010 29.5 0.88 19.5 0.84 14.6 -2.3 -33.8 -12.0 0.016 31.1 1.28 19.1 0.92 19.4 -2.4 -32.0 -58.114.0 0.025 32.5 1.79 18.5 1.02 24.3 -2.4 -30.3 -54.916.0 0.040 33.8 2.41 17.8 1.16 29.0 -2.5 -28.7 -52.618.0 0.063 34.9 3.09 16.9 1.28 33.4 -2.6 -28.3 -50.920.0 0.100 35.9 3.87 15.9 1.41 38.1 -2.5 -27.3 -49.522.0 0.159 36.8 4.81 14.8 1.54 43.5 -2.4 -27.5 -49.324.0 0.252 37.6 5.74 13.6 1.63 49.1 -2.4 -27.2 -49.426.0 0.398 38.2 6.62 12.2 1.70 54.3 -2.4 -27.5 -49.328.0 0.627 38.6 7.32 10.7 1.75 58.3 -2.5 -27.3 -49.330.0 0.999 38.9 7.84 8.9 1.78 61.3 -2.6 -28.0 -49.632.0 1.573 39.1 8.21 7.2 1.80 63.3 -2.6 -27.3 -49.2
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30
Pin[dBm]
Pout[dBm],Gp[dB]
0
10
20
30
40
50
60
70
80
ηt[%]
ηt
Pout
Gp
0
1
2
3
4
5
6
7
8
9
10
0.0 0.2 0.4 0.6 0.8 1.0
Pin[W]
Pout[W],Idd[A]
0
10
20
30
40
50
60
70
80
90
100
ηt[%]
ηt
Pout
Idd
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
10/16
RD12MVP1 Pin vs. Pout Characteristics (@ f=155MHz=0.7A)
f=155MHz,Vdd=7.2V,Vgg=4.87V,Idq=0.7APin Pin Po Po Gp Idd ηT R.L. 2fo 3fo
[dBm] [W] [dBm] [W] [dB] [A] [%] [dB] [dBc] [dBc]0.0 0.001 23.9 0.25 23.9 0.72 4.7 -10.3 -49.6 -2.0 0.002 25.9 0.39 23.9 0.74 7.2 -10.6 -48.3 -4.0 0.002 27.7 0.59 23.7 0.76 10.7 -11.0 -46.5 -6.0 0.004 29.5 0.90 23.5 0.80 15.6 -11.2 -44.0 -8.0 0.006 31.2 1.33 23.3 0.86 21.6 -11.4 -42.8 -
10.0 0.010 32.8 1.92 22.9 0.93 28.5 -12.0 -40.5 -11.9 0.016 34.2 2.64 22.3 1.03 35.6 -12.5 -39.1 -14.0 0.025 35.5 3.54 21.5 1.15 42.9 -12.8 -37.9 -16.0 0.040 36.5 4.42 20.4 1.25 49.3 -12.5 -36.8 -66.118.0 0.063 37.2 5.22 19.2 1.32 54.9 -11.8 -35.7 -63.520.0 0.100 37.7 5.88 17.7 1.37 59.5 -10.6 -35.5 -63.722.0 0.159 38.0 6.37 16.0 1.41 63.0 -9.8 -35.0 -63.824.0 0.252 38.3 6.71 14.3 1.43 65.3 -9.4 -34.9 -63.026.0 0.397 38.4 6.96 12.4 1.44 67.0 -9.2 -34.9 -62.528.0 0.630 38.5 7.15 10.5 1.46 68.3 -9.3 -34.6 -62.730.0 0.996 38.6 7.31 8.7 1.47 69.3 -9.5 -35.0 -62.032.0 1.584 38.7 7.44 6.7 1.47 70.1 -9.7 -34.7 -62.1
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30
Pin[dBm]
Pout[dBm],Gp[dB]
0
10
20
30
40
50
60
70
80
ηt[%]
ηt
Pout
Gp
0
1
2
3
4
5
6
7
8
9
10
0.0 0.2 0.4 0.6 0.8 1.0
Pin[W]
Pout[W],Idd[A]
0
10
20
30
40
50
60
70
80
90
100
ηt[%]η
t
Pout
Idd
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
11/16
RD12MVP1 Pin vs. Pout Characteristics (@ f=175MHz=0.7A)
f=175MHz,Vdd=7.2V,Vgg=4.87V,Idq=0.7APin Pin Po Po Gp Idd ηT R.L. 2fo 3fo
[dBm] [W] [dBm] [W] [dB] [A] [%] [dB] [dBc] [dBc]0.0 0.001 20.4 0.11 20.4 0.71 2.2 -6.3 - -2.0 0.002 22.4 0.17 20.4 0.72 3.4 -6.1 - -4.0 0.003 24.3 0.27 20.3 0.73 5.2 -6.3 - -6.0 0.004 26.3 0.42 20.2 0.75 7.9 -6.3 -55.3 -8.0 0.006 28.1 0.65 20.1 0.78 11.6 -6.2 -53.4 -
10.0 0.010 29.9 0.97 19.9 0.82 16.6 -6.1 -51.7 -12.0 0.016 31.6 1.43 19.6 0.88 22.6 -6.1 -49.6 -61.313.9 0.025 33.1 2.05 19.2 0.96 29.6 -5.8 -48.3 -60.816.0 0.040 34.5 2.83 18.5 1.07 36.8 -5.6 -47.1 -59.018.0 0.063 35.8 3.79 17.8 1.19 44.3 -5.4 -45.4 -57.020.0 0.100 36.8 4.79 16.8 1.31 50.9 -5.5 -44.4 -55.022.0 0.157 37.6 5.70 15.6 1.40 56.5 -5.9 -43.5 -54.724.0 0.253 38.1 6.47 14.1 1.48 60.7 -6.6 -43.1 -54.326.0 0.397 38.4 6.98 12.5 1.54 63.2 -7.2 -42.2 -53.828.0 0.628 38.7 7.36 10.7 1.57 65.0 -7.6 -42.1 -53.430.0 0.991 38.8 7.63 8.9 1.60 66.3 -7.8 -42.2 -53.132.0 1.584 38.9 7.85 6.9 1.62 67.3 -7.8 -42.2 -53.5
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30
Pin[dBm]
Pout[dBm],Gp[dB]
0
10
20
30
40
50
60
70
80
ηt[%]
ηt
Pout
Gp
0
1
2
3
4
5
6
7
8
9
10
0.0 0.2 0.4 0.6 0.8 1.0
Pin[W]
Pout[W],Idd[A]
0
10
20
30
40
50
60
70
80
90
100
ηt[%]
ηt
Pout
Idd
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
12/16
RD12MVP1 Vdd vs. Pout Characteristics (@ f=135MHz)
0
2
4
6
8
10
12
14
16
18
20
6 7 8 9 10
Vd[V]
Pout[W],Idd[A]
0
10
20
30
40
50
60
70
80
90
100
ηt[%]
ηt
Pout
Idd
0
5
10
15
20
25
30
35
40
45
50
6 7 8 9 10
Vd[V]
Pout[dBm]
,Gp[dB]
0
10
20
30
40
50
60
70
80
90
100
ηt[%]
ηt
Pout
Gp
f=135MHz,Vgg=4.87V,Idq=1.0A,Pin=1.0WVdd Gp Idd ηT R.L. 2fo 3fo[V] [dBm] [W] [dB] [A] [%] [dB] [dBc] [dBc]6.0 37.7 5.9 7.7 1.53 64.2 -2.5 -27.7 -49.87.0 38.9 7.8 9.0 1.78 63.1 -2.5 -27.5 -49.68.0 39.9 9.9 9.9 2.02 61.5 -2.5 -27.4 -48.99.0 40.8 12.0 10.8 2.24 59.6 -2.6 -27.5 -49.2
10.0 41.5 14.0 11.5 2.45 57.3 -2.6 -27.3 -48.6
Po
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
13/16
RD12MVP1 Vdd vs. Pout Characteristics (@ f=155MHz)
0
2
4
6
8
10
12
14
16
18
20
6 7 8 9 10
Vd[V]
Pout[W]
,Idd[A]
0
10
20
30
40
50
60
70
80
90
100
ηt[%]
ηt
Pout
Idd
0
5
10
15
20
25
30
35
40
45
50
6 7 8 9 10
Vd[V]
Pout[dBm],Gp[dB]
0
10
20
30
40
50
60
70
80
90
100
ηt[%]ηt
Pout
Gp
f=155MHz,Vgg=4.87V,Idq=1.0A,Pin=1.0WVdd Gp Idd ηT R.L. 2fo 3fo[V] [dBm] [W] [dB] [A] [%] [dB] [dBc] [dBc]6.0 37.0 5.0 7.0 1.20 70.1 -9.5 -35.0 -61.07.0 38.4 6.9 8.4 1.42 69.7 -9.5 -34.6 -61.98.0 39.6 9.1 9.6 1.64 69.2 -9.5 -34.4 -62.29.0 40.6 11.5 10.6 1.87 68.8 -9.5 -34.2 -61.4
10.0 41.5 14.2 11.5 2.09 68.3 -9.6 -34.2 -61.3
Po
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
14/16
RD12MVP1 Vdd vs. Pout Characteristics (@ f=175MHz)
0
2
4
6
8
10
12
14
16
18
20
6 7 8 9 10
Vd[V]
Pout[W]
,Idd[A]
0
10
20
30
40
50
60
70
80
90
100
ηt[%]
ηt
Pout
Idd
0
5
10
15
20
25
30
35
40
45
50
6 7 8 9 10
Vd[V]
Pout[dBm],Gp[dB]
0
10
20
30
40
50
60
70
80
90
100
ηt[%]ηt
Pout
Gp
f=175MHz,Vgg=4.87V,Idq=1.0A,Pin=1.0WVdd Gp Idd ηT R.L. 2fo 3fo[V] [dBm] [W] [dB] [A] [%] [dB] [dBc] [dBc]6.0 37.3 5.4 7.3 1.33 67.4 -7.8 -42.7 -54.27.0 38.7 7.4 8.7 1.58 67.0 -7.7 -42.2 -53.88.0 39.8 9.5 9.8 1.81 66.2 -7.7 -41.5 -53.29.0 40.8 12.1 10.8 2.05 65.6 -7.7 -41.1 -52.7
10.0 41.7 14.7 11.7 2.29 64.5 -7.8 -41.0 -52.6
Po
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
15/16
RD12MVP1 Equivalent Circuit (f=135 - 175MHz)
18mm1.5mm 2mm
C1
5mm
R3
C13C15
L4
C11
W
2mm
W
L3
23mm
C2
L1
C3
2mm 2mm
C4
C5
3mm
L2
18.5mm
R1
C6
2mm
C12
15mm C14
2mm
C8
C7
2mm
C9 C10
2.5mm
L5
L65mm
RD12MVP1
RF-in RF-out
Vgg Vdd
Note：Board material=glass-Epoxy SubstrateMicro strip linewidth=1.3mm/50OHM,er=4.8,t=0.8mmW：Line width=1.0mm
3mm
R2
Heat sink
Substrate
Thermal sheet
Device
Matching Side
Parts Type Symbol Value Type name VenderC1 330pF GRM2162C1H331JA01D Murata Manufacturing Co.,Ltd.C2 20pF GRM2162C1H200JA01D Murata Manufacturing Co.,Ltd.C3 43pF GRM2162C1H430JA01D Murata Manufacturing Co.,Ltd.C4 82pF GRM2162C1H820JA01D Murata Manufacturing Co.,Ltd.C5 24pF GRM2162C1H240JA01D Murata Manufacturing Co.,Ltd.C6 180pF GRM2162C1H181JA01D Murata Manufacturing Co.,Ltd.C7 82pF GRM2162C1H820JA01D Murata Manufacturing Co.,Ltd.C8 68pF GRM2162C1H680JA01D Murata Manufacturing Co.,Ltd.C9 27pF GRM2162C1H270JA01D Murata Manufacturing Co.,Ltd.C10 13pF GRM2162C1H130JA01D Murata Manufacturing Co.,Ltd.C11 330pF GRM2162C1H331JA01D Murata Manufacturing Co.,Ltd.C12 4700pF GRM2162C1H472JA01D Murata Manufacturing Co.,Ltd.C13 2200pF GRM2162C1H222JA01D Murata Manufacturing Co.,Ltd.C14 2200pF GRM2162C1H222JA01D Murata Manufacturing Co.,Ltd.C15 33uF UVZ1H330MDD NICHICON COPORATIONR1 1Ω RPC10-1R0J TAIYOSHA ELECTRIC CO.,Ltd.R2 68Ω RPC05-680J TAIYOSHA ELECTRIC CO.,Ltd.R3 4.7KΩ RPC05-472J TAIYOSHA ELECTRIC CO.,Ltd.
L117.2nH Enameled wire 3Turns,
Diameter:0.4mm,φ2.5mm(the out side diameter)φ0.4 T3 yc corporation
L27.5nH Enameled wire 3Turns,
Diameter:0.4mm,φ1.66mm(the out side diameter)4803A yc corporation
L36.6nH Enameled wire 2Turns,
Diameter:0.23mm,φ1.66mm(the out side diameter)2302S yc corporation
L443.7nH Enameled wire 6Turns,
Diameter:0.40mm,φ2.46mm(the out side diameter)4006C yc corporation
L510.8nH Enameled wire 4Turns,
Diameter:0.40mm,φ1.66mm(the out side diameter)4804A yc corporation
L637.8nH Enameled wire 7Turns,
Diameter:0.23mm,φ1.66mm(the out side diameter)2307A yc corporation
- Graphite seat Thickness=0.5mm αGS H-type TAICA CORPORATION
Inductance
Capasitor
Resistance
Thermalsheet.
RD12MVP1 135-175MHz RF characteristics data
AN-VHF-034-C
Application Note for Silicon RF Power Semiconductors
16/16
*RF matching is mediated by a through hole.
Device contact View
